This is an overview of different models and mechanisms developed to describe the capture and relaxation of carriers in quantum-dot systems. Despite their undisputed importance, the mechanisms leading to population and energy exchanges between a quantum dot and its environment are not yet fully understood. The authors develop a first-order approach to such effects, using elementary quantum mechanics and an introduction to the physics of semiconductors. The book results from a series of lectures given by the authors at the Master's level.

This book presents research on superconductivity. The first chapter discusses the physical properties of two nonmagnetic noncentrosymmetric superconductors, LaRhSi3 and LaIrSi3. Chapter two reviews the SrFe2As2 and FeTe0.8S0.2 compounds, which are perspective for developing new superconducting materials on their basis. The possibility of selective excitation of the nonlinear lattice vibrations in high-temperature superconductors formed from layers or thin films opens the new perspectives in the manipulations and control of quantum field in superconducting phase, which is further discussed in chapter three. Chapter four begins with a detailed derivation of the three coupled integral equations associated with the so-called generalised Bose-Einstein condensation formalism of a many-fermion system. Finally, chapter five proposes a microscopic theory of superconductivity based on the spinfluctuation mechanism of pairing.

Modern electronics is being transformed as device size decreases to a size where the dimensions are significantly smaller than the constituent electron's mean free path. In such systems the electron motion is strongly confined resulting in dramatic changes of behaviour compared to the bulk. This book introduces the physics and applications of transport in such mesoscopic and nanoscale electronic systems and devices. The behaviour of these novel devices is influenced by numerous effects not seen in bulk semiconductors, such as the Aharonov-Bohm Effect, disorder and localization, energy quantization, electron wave interference, spin splitting, tunnelling and the quantum hall effect to name a few. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this book will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area.

Since the 1980s, a general theme in the study of high-temperature superconductors has been to test the BCS theory and its predictions against new data. At the same time, this process has engendered new physics, new materials, and new theoretical frameworks. Remarkable advances have occurred in sample quality and in single crystals, in hole and electron doping in the development of sister compounds with lower transition temperatures, and in instruments to probe structure and dynamics. Handbook of High-Temperature Superconductvity is a comprehensive and in-depth treatment of both experimental and theoretical methodologies by the the world's top leaders in the field. The Editor, Nobel Laureate J. Robert Schrieffer, and Associate Editor James S. Brooks, have produced a unified, coherent work providing a global view of high-temperature superconductivity covering the materials, the relationships with heavy-fermion and organic systems, and the many formidable challenges that remain.

The world of semiconductor research is continuously expanding our knowledge of the physics governing phenomena at micro and nano scales, driving the development of new technologies and rapidly enhancing the quality of our everyday life. The huge amount of scientific papers published today in this field of research confirms the great interest of the scientific community in semiconductor science and its future applications. However, this enormous growth of available scientific information sometimes makes the familiar channels of communication considerably less effective, because of the difficulties for experts in a given field to keep up with the current literature. "Advances in Semiconductor Physics" Series has been conceived mainly to improve this situation. This monograph presents a collection of selected contributions reporting some of the most stimulating and challenging results obtained by recent researches in the field of semiconductor physics. About the same number of theoretical, experimental and simulative studies have been included in this book, driven by the basic idea that all these different types of investigations are equally important in increasing our understanding of the physics of semiconductors.

The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. * International group of contributors * Presents basic physical concepts developed in this field in recent years in a uniform manner * Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials

Energy storage technologies (such as pumped hydro, compressed air energy storage, various types of batteries, flywheels, electrochemical capacitors, etc.) provide for multiple applications that include energy management, backup power, load levelling, frequency regulation, voltage support, and grid stabilisation. Importantly, not every type of storage is suitable for every type of application, motivating the need for a portfolio strategy for energy storage technology. There are four challenges related to the widespread deployment of energy storage. The challenges are cost competitive energy storage technologies (including manufacturing and grid integration), validated reliability and safety, equitable regulatory environment, and industry acceptance. This book sets out potential options to improve energy storage. It also presents a number of specific actions that could help maintain both scientific advancements and a pipeline of project deployments.

The study of solids is one of the richest, most exciting, and most successful branches of physics. While the subject of solid state physics is often viewed as dry and tedious this new book presents the topic instead as an exciting exposition of fundamental principles and great intellectual breakthroughs. Beginning with a discussion of how the study of heat capacity of solids ushered in the quantum revolution, the author presents the key ideas of the field while emphasizing the deep underlying concepts. The book begins with a discussion of the Einstein/Debye model of specific heat, and the Drude/Sommerfeld theories of electrons in solids, which can all be understood without reference to any underlying crystal structure. The failures of these theories force a more serious investigation of microscopics. Many of the key ideas about waves in solids are then introduced using one dimensional models in order to convey concepts without getting bogged down with details. Only then does the book turn to consider real materials. Chemical bonding is introduced and then atoms can be bonded together to crystal structures and reciprocal space results. Diffraction experiments, as the central application of these ideas, are discussed in great detail. From there, the connection is made to electron wave diffraction in solids and how it results in electronic band structure. The natural culmination of this thread is the triumph of semiconductor physics and devices. The final section of the book considers magnetism in order to discuss a range of deeper concepts. The failures of band theory due to electron interaction, spontaneous magnetic orders, and mean field theories are presented well. Finally, the book gives a brief exposition of the Hubbard model that undergraduates can understand. The book presents all of this material in a clear fashion, dense with explanatory or just plain entertaining footnotes. This may be the best introductory book for learning solid state physics. It is certainly the most fun to read.

Amorphous chalcogenide semiconductors have commercial value and have many uses such as image formation, including x-rays, and high-definition TV pick up tubes. They have widespread application in the microelectronics industry and amorphous metallic alloys also have useful magnetic properties. This book focuses on their imaging applications and related properties. It examines the two groups of amorphous semiconductors that are of most commercial interest: the chalcogenide glasses the tetrahedrally bonded amorphous solids such as amorphous silicon, germanium and related alloys Both of these groups may be conveniently prepared in the form of thin/thick films which is of considerable importance in applications where large-area coverage of flat or curved surfaces of rigid or flexible materials is desirable such as in photovoltaic arrays, X-Ray sensors, display screens and photocopier drums.

Students and researchers looking for a comprehensive textbook on magnetism, magnetic materials and related applications will find in this book an excellent explanation of the field. Chapters progress logically from the physics of magnetism, to magnetic phenomena in materials, to size and dimensionality effects, to applications. Beginning with a description of magnetic phenomena and measurements on a macroscopic scale, the book then presents discussions of intrinsic and phenomenological concepts of magnetism such as electronic magnetic moments and classical, quantum, and band theories of magnetic behavior. It then covers ordered magnetic materials (emphasizing their structure-sensitive properties) and magnetic phenomena, including magnetic anisotropy, magnetostriction, and magnetic domain structures and dynamics. What follows is a comprehensive description of imaging methods to resolve magnetic microstructures (domains) along with an introduction to micromagnetic modeling. The book then explores in detail size (small particles) and dimensionality (surface and interfaces) effects - the underpinnings of nanoscience and nanotechnology that are brought into sharp focus by magnetism. The hallmark of modern science is its interdisciplinarity, and the second half of the book offers interdisciplinary discussions of information technology, magnetoelectronics and the future of biomedicine via recent developments in magnetism. Modern materials with tailored properties require careful synthetic and characterization strategies. The book also includes relevant details of the chemical synthesis of small particles and the physical deposition of ultra thin films. In addition, the book presents details of state-of-the-art characterization methods and summaries of representative families of materials, including tables of properties. CGS equivalents (to SI) are included.

This book presents current research from across the globe in the study of superconductivity theory, materials and applications. Topics discussed include tunnelling spectroscopy of novel layered superconductors; stability conditions of high-Tc superconductors; a study of the superconducting phase in metallic superconductors; numerical calculation of trapped magnetic field for bulk superconductors; ion modified high-Tc Josephson junctions and SQUIDS; and vortices in high temperature superconductors.

This book provides an up-to-date report on the recent advances in theory and experiment of the unconventional copper-oxide (known as cuprate) and iron-arsenic (called pnictide) superconductors. This book includes some experimental results which lead to the observation of spin-fluctuation spectrum in cuprates and pnictides.

Electronic and optoelectronic devices using organic materials as active elements are attractive because they can take advantage of organic materials. Among them, organic field-effect transistors (OFETs), which consist of organic semiconductors, dielectric layers, and electrodes, are expected to be a promising technology for application in displays, sensors and memories. Organic semiconductors play a key role in determining the device characteristics. Recent technological advances in OFETs have triggered intensive research into molecular design, synthesis, device fabrication, thin film morphology and transport of holes and electrons. This book presents and discusses research on new organic semiconductors.

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.

Chapter titles are ...(1) Introduction ...(2) Analysis and Design of 2-D Planar Transmission Lines and Circuits [subsections include Finite Element Analysis Method and Spectral Domain Approach] ...(3) Analysis of 3-D Electronic Packaging Circuits ...(4) Analytical Asymptotic Extraction Techniques for Multi-Layer Transmission Lines and Planar Circuits ...(5) Analysis of Antennas [subsections include Dielectric-Loaded Aperture Antennas and Ferrite-Loaded Antennas - with applications to Radar] ...(6) References.

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. This comprehensive text is aimed at graduate level students and researchers, breaking down the complexities of fabrication, use, and maintenance of heterojunctions. Topics include: introduction to quantum mechanics, Potential barriers and wells, electronic energy levels in periodic potentials, tunneling through potential barriers, distribution functions and density of states, optical properties of interband and intersubband transitions, electrical properties, techniques and measurements, growth issues, devices: Detectors and emitters.

The Introduction to Semiconductor Marketing is a unique marketing primer for semiconductor industry professionals. This primer describes in detail fundamental marketing concepts coupled with useful product marketing and product management procedures. This book is especially useful to people new to semiconductor product marketing or those who are in a start up environment and may need help in marketing and positioning their products. Topics covered by this guidebook include: marketing basics, product positioning, segmenting and targeting markets, basic product management and business planning, marketing organizations, marketing requirements documents, marketing and relationships with engineering and sales among other topics.

The broad field of thin film technology is based first of all on the film growth processes in general. The concepts of crystal structure and defects in crystalline thin films such as grain boundaries, dislocations and vacancies are examined. The general nature of film growth from atoms equilibrating with the service, through the initial stages of growth to film coalescence and zone models is also within the scope of this book as are evaporation, sputter deposition and chemical vapour deposition. Thin films are widely used in microelectronics, chemistry and a wide array of related fields. This book offers new research in this exploding field.

Using the simplest and most physically intuitive arguments and methods, Introduction to Superconductivity exposes not only graduate students but professionals in academe and industry to the breadth and richness of the phenomenon of superconductivity. Applications as well as fundamental principles are thoroughly covered. The author not only views superconductivity as a macroscopic quantum state, as described by the Ginzburg-Landau phenomenological equation, but also recognizes that the fundamental entity is the paired electrons of the microscopic theory of Bardeen-Cooper-Schrieffer. Special features include a treatment of varied phenomena in a simple way which keeps the microscopic theory of BCS in the background, and a thorough discussion of magnetic properties of type II superconductors, including dissipative effects and the use of twisted multifilamentary wires. After treating the fundamentals of the Josephson effects, an analysis is given of how the popular RF-biased SQUID magnetometer works. An extensive discussion of fluctuation effects is also included. Major changes in this new edition include the following: new chapter on high temperature superconductors; updated and expanded discussion of the Josephson effect; new chapter on the Josephson effect in mesoscopic junctions; new chapter on nonequilibrium superconductivity; introductory treatment of electrodynamics in London theory level; and the deemphasis of nonlocal electrodynamics. The level of treatment presumes a background in Solid State Physics and Basic Quantum Mechanics and avoids the use of Thermal Green's Functions.

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.
Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.
This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.