Modern electronics is being transformed as device size decreases to a size where the dimensions are significantly smaller than the constituent electron's mean free path. In such systems the electron motion is strongly confined resulting in dramatic changes of behaviour compared to the bulk. This book introduces the physics and applications of transport in such mesoscopic and nanoscale electronic systems and devices. The behaviour of these novel devices is influenced by numerous effects not seen in bulk semiconductors, such as the Aharonov-Bohm Effect, disorder and localization, energy quantization, electron wave interference, spin splitting, tunnelling and the quantum hall effect to name a few. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this book will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area.

Since the 1980s, a general theme in the study of high-temperature superconductors has been to test the BCS theory and its predictions against new data. At the same time, this process has engendered new physics, new materials, and new theoretical frameworks. Remarkable advances have occurred in sample quality and in single crystals, in hole and electron doping in the development of sister compounds with lower transition temperatures, and in instruments to probe structure and dynamics. Handbook of High-Temperature Superconductvity is a comprehensive and in-depth treatment of both experimental and theoretical methodologies by the the world's top leaders in the field. The Editor, Nobel Laureate J. Robert Schrieffer, and Associate Editor James S. Brooks, have produced a unified, coherent work providing a global view of high-temperature superconductivity covering the materials, the relationships with heavy-fermion and organic systems, and the many formidable challenges that remain.

Transconductance Thermal Noise Model For MOSFETs

Accurate expressions for MOSFET channel thermal noise in terms of transconductances are derived for long channel MOSFETs in both the strong and weak inversion regions. The transconductance form also allows us to formulate a thermal noise model which includes moderate inversion.

Part of the transconductance expressions being presented here, namely (8kT/3)(gm+gmbs+gds), have been in use before in SPICE simulators but (to our knowledge) its derivation has never been rigorously derived from the first principles of MOSFET theory. This derivation and others will be presented.

It will also be shown that the general form of the transconductance thermal noise model for long channels, derived for both the saturated and non-saturated (triode) regions, are accurate and equivalent to the inversion charge thermal noise model.

Finally, the thermal noise expression derived for long channel MOSFETs will be extended to cover the short channel case by treating velocity saturation. The excess thermal noise factor due to the higher electric fields in short channels is also included.

Starting in the 1950s, US physicists dominated the search for elementary particles; aided by the association of this research with national security, they held this position for decades. In an effort to maintain their hegemony and track down the elusive Higgs boson, they convinced President Reagan and Congress to support construction of the multibillion-dollar Superconducting Super Collider project in Texas--the largest basic-science project ever attempted. But after the Cold War ended and the estimated SSC cost surpassed ten billion dollars, Congress terminated the project in October 1993. Drawing on extensive archival research, contemporaneous press accounts, and over one hundred interviews with scientists, engineers, government officials, and others involved, Tunnel Visions tells the riveting story of the aborted SSC project. The authors examine the complex, interrelated causes for its demise, including problems of large-project management, continuing cost overruns, and lack of foreign contributions. In doing so, they ask whether Big Science has become too large and expensive, including whether academic scientists and their government overseers can effectively manage such an enormous undertaking.

THE MOST ADVANCED SEMICONDUCTOR MISMATCH TECHNIQUES

These mismatch methods are the most advanced techniques in the Semiconductor field. All the practical matters of simulation, measurement, and mismatch model parameter generation (using random field theory) including multi-device co-correlation are handled in an accurate, practical, and comprehensive manner. This represents a true advance and technical progress in the matter of semiconductor mismatch simulation and measurement. If you're involved in any way with mismatch of semiconductor devices you've got to get this book. If not for yourself then for the modelers that create your semiconductor models for you.

TABLE OF CONTENTS SUMMARY

PART I. DEVICE MISMATCH SIMULATION OVERVIEW How To Perform Monte-Carlo And Mismatch Simulation Parameters and Statistics Model Files Process & Mismatch Variation Mismatch vs Area Mismatch vs Distance and Other Effects (Mismatch Factor) Effective Mismatch Factor

PART II. MISMATCH MEASUREMENT TECHNIQUES Resistors, Diodes, Mosfets, Bipolar Transistors, JFETs Monte-Carlo Analysis of Correlated Variables Differential Mismatch Measurement Features: Far superior accuracy compared to past traditional methods. Differential method: Both devices are biased simultaneously, greatly reducing common mode noise and device thermal difference errors. Differential method avoids the errors of subtracting two large error prone, poor resolution measurements. Swapping of internal differential precision range resistors cancels internal instrumentation system errors resulting in even greater accuracy.

PART III. APPLYING RANDOM FIELD THEORY TO MISMATCH Random Field Theory ("Space" Series in More Than 1 Dimension) Random Field Correlation Function In 2 Dimensions (Our Semiconductor Case) How To Deal With Parametric Trends (Wafer Gradients) Simulating Correlated Devices In Two Dimensions (Using the Multivariate Normal Conditional Probability Density)

The purpose of this book is to illustrate the magnificence of the fabless semiconductor ecosystem, and to give credit where credit is due. We trace the history of the semiconductor industry from both a technical and business perspective. We argue that the development of the fabless business model was a key enabler of the growth in semiconductors since the mid-1980s. Because business models, as much as the technology, are what keep us thrilled with new gadgets year after year, we focus on the evolution of the electronics business. We also invited key players in the industry to contribute chapters. These "In Their Own Words" chapters allow the heavyweights of the industry to tell their corporate history for themselves, focusing on the industry developments (both in technology and business models) that made them successful, and how they in turn drive the further evolution of the semiconductor industry.

The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. * International group of contributors * Presents basic physical concepts developed in this field in recent years in a uniform manner * Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials

The various devices (transistors, resistors, etc.) in an integrated semiconductor circuit have very highly coupled or correlated parametric inter-relationships. Adding to the complexity, are changes in the parametric values as the sizes and spacings between the devices change. This coupling is not in the form of interaction fields or forces but rather takes place through the correlation of parameters between different devices. These parametric correlations occur because of the processing of the semiconductor wafers through its manufacturing stages.

The devices on each wafer have many n-type or p-type doped semiconductor layers in common because of being processed at the same temperature, or in the same gaseous environments, or in the same implantation sessions. In addition, each doped layer has variations over its different regions. All this results in very complex parametric interrelationships between the various devices within the integrated circuit. In turn these have very influential effects on the variation of key circuit characteristics.

In spite of the tremendous importance of knowing and predicting these relationships, accurate methods of predicting these complex relationships between devices have evaded the semiconductor industry. The current methods used, such as statistically independent Monte Carlo simulation and Corner Models, either severely underestimate or severely overestimate the variation of key integrated circuit characteristics of interest. Either way, the current methods are very inaccurate. In order to meet this challenge, the methods covered in this dissertation have been developed and applied to the case at hand. They are based on applications of probability, statistics, stochastic, and random field theory, and various computer algorithms.

Many of the concepts developed here can be applied to other complex correlated systems not necessarily involving semiconductors.

This book systematically examines the results of an investigation of electronic and molecular processes on the surface of semiconductors, taking place at their interaction with particles of a gas environment or in the course of superficial alloying by atoms of metals. The main subject of the book is the analysis of interaction of semiconductors with foreign atoms and molecules from a gas environment and from beams of elements, bombarding a surface. This book consists of five chapters, including 13 tables, 122 figures and bibliography based on over 500 sources, including author's publications and data originally never published in English before. The book acquaints the reader with basic concepts and positions, used at the description of interaction of semiconductor surface with foreign atoms and molecules. Demonstration of opportunities arising from the usage of local and collective approaches to the analysis of electronic and molecular processes on a surface is useful though insufficient in determining the sensitivity for adsorption of a semiconductors' surface.

This comprehensive monograph summarises the 30-year studies of borophosphosilicate glass (BPSG) thin film used in electronic technologies, including the authors personal experience with the film deposition, characterisation, and implementation in microelectronic technology. The main core of the monograph is the interrelation of chemical vapour deposition (CVD) kinetic features, thin film material properties, and electronic device technology aspects. Part one of the monograph is devoted to the analysis of thin film synthesis, such as: CVD methodology and BPSG film processes, silicon dioxide and glass film growth kinetics, CVD step coverage and gap-fill features. Part two of the book is a description of BPSG film properties, film structure, glass flow capability, BPSG film-moisture interaction and the film defect formation phenomenon. A number of experimental data are presented and discussed in detail.

This book consists of thirteen chapters each of them defining in depth the chapter subject and surveying recent developments in the field. The main objective of this book is to summarise the recent advances in material science of high-Tc superconductors, specify their properties, processing, and applications. New and challenging issues appear in this book, like superconducting nano wires, low cost RE-123, infiltration growth, processing of single domain porous Y-123, novel cold seeding method for the production of LRE-123 materials, flux pinning, magnetic shielding, and innovation in synthesis of MgB2. Further, it also covers large scale applications of bulk materials, HTS Maglev systems with bulk superconducting parts, development of superconducting permanent magnet system, pulsed field magnetisation and its application, and production and characterisation of HTS roebel cable.

Amorphous chalcogenide semiconductors have commercial value and have many uses such as image formation, including x-rays, and high-definition TV pick up tubes. They have widespread application in the microelectronics industry and amorphous metallic alloys also have useful magnetic properties. This book focuses on their imaging applications and related properties. It examines the two groups of amorphous semiconductors that are of most commercial interest: the chalcogenide glasses the tetrahedrally bonded amorphous solids such as amorphous silicon, germanium and related alloys Both of these groups may be conveniently prepared in the form of thin/thick films which is of considerable importance in applications where large-area coverage of flat or curved surfaces of rigid or flexible materials is desirable such as in photovoltaic arrays, X-Ray sensors, display screens and photocopier drums.

One of the goals of the actual semiconductor detector research is to find and develop other materials which overcome the limits of the present semiconductors. In this respect the so-called wide-band gap semiconductors, among which silicon carbide is one of the most promising examples, are the best candidates. Their advantages with respect to traditional semiconductors, namely silicon and germanium, are discussed. This book examines certain aspects of the interaction of radiation with semiconductors, as well as the basic properties of semiconductor detectors.

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.

In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for the current conduction in single layer OTFDs including both injection and bulk effect for both trap free organics as well as organics with traps exponentially distributed in energy are developed. The dependencies of the current density on the operation voltage, the thickness of the organic layer and the trap properties are numerically studied.

The book is devoted to theoretical investigations of interrelations in between morphology, single-electron spectrum, and optical properties of polycrystalline and spatially non-homogeneous amorphous semiconductors.

The superconductivity of MgB2 has been hidden for nearly 50 years although it has the highest Tc among the intermetallics superconductors. Beside the high Tc, simple crystal structure, large coherence length, high critical field, transparency of grain boundaries to current flow and low normal state resistivity MgB2 is a fascinating topic to study for both large scale application and electronic devices. Moreover, the presence of two-gap superconductivity (d and o band) has been theoretically and experimentally established. However, critical current density of pristine MgB2 drops rapidly in the high magnetic field due to the weak pinning centres and low upper critical field. During the past three years, novel techniques and developments for fabrication of useable MgB2 have been reported, including chemical alloying, irradiation, thermo-mechanical processing techniques and magnetic shielding to improve the critical density, upper critical field and the irreversibility field. Among the studies, atomic substitution, especially using nano-particles, may help in clarification of the superconductivity mechanism thus making it appropriate for practical application. On the other hand, the momentum of enhancing flux pinning using chemical doping is moving to a positive side. Nano-SiC powder is well known for effective improvement of the critical current density. In this book, a brief introduction of superconductivity in MgB2 is introduced. Further, the basic electronic and magnetic properties of the MgB2 as well as its crystal structure are reviewed. The authors also discuss the preparation method that has been well developed for experimentation on MgB2. Along with that, they review the experimental results of the chemical alloying on MgB2, particularly on the critical current density. In addition, the future prospects of MgB2 and developments for applications in the current superconductivity market are given.

Light-emitting diodes are being widely used due to their efficient use of power. The applications for power LEDs include traffic lights, street lamps, automotive lighting, architectural lights, household light replacements, signage lighting (replacing neon strip lights and fluorescent tubes), and many more.
Powering (driving) these LED's is not always simple. Linear driving is inefficient and generates far too much heat. With a switching supply, the main issues are EMI and efficiency, and of course cost. The problem is to get a design that meets legal requirements and is efficient, while costing the least. This book covers the design trade-offs involved in LED driving applications, from low-power to UB-LEDs and beyond.
* Practical, "hands-on" approach to power supply design for LED drivers;
* Detailed examples of what works and why, throughout the design process;
* Commentary on how the calculated component value compares with the actual value used, including a description of why the choice was made.

Chapter titles are ...(1) Introduction ...(2) Analysis and Design of 2-D Planar Transmission Lines and Circuits [subsections include Finite Element Analysis Method and Spectral Domain Approach] ...(3) Analysis of 3-D Electronic Packaging Circuits ...(4) Analytical Asymptotic Extraction Techniques for Multi-Layer Transmission Lines and Planar Circuits ...(5) Analysis of Antennas [subsections include Dielectric-Loaded Aperture Antennas and Ferrite-Loaded Antennas - with applications to Radar] ...(6) References.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. This important book brings together leading research in this dynamic field.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

Based on the latest progress in superconductivity research, the authors form a conventional theory of superconductivity and express BCS paring theory at a higher level. They especially emphasis the importance of the long-range phase coherence for the superconductivity. They also point out some misunderstandings of basic concepts about superconductivity in present textbooks and monographs. They illustrate the correct theory of the high-Tc superconductivity and the application of the high-Tc superconductors to establish a correct and detailed theory regarding this mechanism in different systems.

This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.

This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.