An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials. The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry.

Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

Provides information on all chemical, physical and material aspects of this class of cuprates, and covers their applications. This work provides data on the chemistry, solid-state chemistry, handling and safety requirements of thallium.

Power Electronic Semiconductor Switches is the successor to Professor Ramshaw's widely-used Power Electronics. The text has been completely re-written and expanded to focus on semiconductor switches, and to take into account advances in the field since the publication of Power Electronics and changes in electrical and electronic engineering syllabuses.

After a foreword by Klaus von Klitzing, the first chapters of this book discuss the prehistory and the theoretical basis as well as the implications of the discovery of the Quantum Hall effect on superconductivity, superfluidity, and metrology, including experimentation. The second half of this volume is concerned with the theory of and experiments on the many body problem posed by fractional effect. Specific unsolved problems are mentioned throughout the book and a summary is made in the final chapter. The quantum Hall effect was discovered on about the hundredth anniversary of Hall's original work, and the finding was announced in 1980 by von Klitzing, Dorda and Pepper. Klaus von KIitzing was awarded the 1985 Nobel prize in physics for this discovery.

The primary thrust of very large scale integration (VLS ) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS ) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS .

The physics of non-equilibrium many-body systems is a rapidly expanding area of theoretical physics. Traditionally employed in laser physics and superconducting kinetics, these techniques have more recently found applications in the dynamics of cold atomic gases, mesoscopic and nano-mechanical systems, and quantum computation. This book provides a detailed presentation of modern non-equilibrium field-theoretical methods, applied to examples ranging from biophysics to the kinetics of superfluids and superconductors. A highly pedagogical and self-contained approach is adopted within the text, making it ideal as a reference for graduate students and researchers in condensed matter physics. In this Second Edition, the text has been substantially updated to include recent developments in the field such as driven-dissipative quantum systems, kinetics of fermions with Berry curvature, and Floquet kinetics of periodically driven systems, among many other important new topics. Problems have been added throughout, structured as compact guided research projects that encourage independent exploration.

The Winter School held in Les Houches on March 12-21, 1985 was devoted to Semiconductor Heterojunctions and Superlattices, a topic which is recognized as being now one of the most interesting and active fields in semiconductor physics. In fact, following the pioneering work of Esaki and Tsu in 1970, the study of these two-dimensional semiconductor heterostructures has developed rapidly, both from the point of view of basic physics and of applications. For instance, modulation-doped heterojunctions are nowadays currently used to investigate the quantum Hall effect and to make very fast transistors. This book contains the lectures presented at this Winter School, showing in particular that many aspects of semiconductor heterojunctions and super lattices were treated, extending from the fabrication of these two-dimensional systems to their basic properties and applications in micro-and opto-electron ics. Among the subjects which were covered, one can quote as examples: molecular beam epitaxy and metallorganic chemical vapor deposition of semi conductor compounds; band structure of superlattices; properties of elec trons in heterojunctions, including the fractional quantum Hall effect; opti cal properties of two-dimensional heterostructures; quantum well lasers; and two-dimensional electron gas field effect transistors. It is clear that two-dimensional semiconductor systems are raising a great deal of interest in many industrial and university laboratories. From the number of applications which were received and from the reactions of the participants, it can certainly be asserted that this School corresponded to a need and came at the right time."

Superconductors capture the imagination with seemingly magical properties that allow them to carry electricity without losing any energy at all. They are however, extraordinarily difficult materials to work with. In this book, Susannah Speller explores the astonishing variety of superconducting materials and the rich science behind optimising their performance for use in different applications. Readers will discover how diverse superconducting materials and their applications are, from the metallic alloys used in the Large Hadron Collider to the thin film superconductors that will be crucial for quantum computers. This book tells about how even the simplest superconductors have to be carefully designed and engineered on the nanometre scale. Along the way, the reader will be introduced to what materials science is all about and why advanced materials have such widespread importance for technological progress. With 'Wider View' and 'Under the Lens' sections, Speller provides an accessible and illuminating exploration of superconductors and their place in the modern world.

This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption. 2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.

Explores theoretical and experimental studies of the properties of one-dimensional photonic crystals. The authors also consider the possibilities of controlling the characteristics of microwave photonic crystals with the help of electric and magnetic fields and provide examples of new fields of application of microwave photonic crystals. They review measurements of the parameters of layered structures containing nanometer-sized semiconductor and metal layers and explore microwave-compatible loads. Written for specialists and scientists working in the fields of radiophysics, microwave solid-state electronics, and microwave photonics. Key selling features: Presents studies of theoretical and experimental properties of one-dimensional photonic crystals Analyzes microwave photonic crystals based on flat transmission lines. Explores the use of electric and magnetic fields to control crystal characteristics. Reviews applications of photonic crystals in semiconductors. Examines one-dimensional microwave photonic crystals based on rectangular wave guides.

This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: * practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; * detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; * systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; * coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students. Dr. Peter W. Epperlein is Technology Consultant with his own semiconductor technology consulting business Pwe-PhotonicsElectronics-IssueResolution in the UK. He looks back at a thirty years career in cutting edge photonics and electronics industries with focus on emerging technologies, both in global and start-up companies, including IBM, Hewlett-Packard, Agilent Technologies, Philips/NXP, Essient Photonics and IBM/JDSU Laser Enterprise. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) degrees in physics, magna cum laude, from the University of Stuttgart, Germany. Dr. Epperlein is an internationally recognized expert in compound semiconductor and diode laser technologies. He has accomplished R&D in many device areas such as semiconductor lasers, LEDs, optical modulators, quantum well devices, resonant tunneling devices, FETs, and superconducting tunnel junctions and integrated circuits. His pioneering work on sophisticated diagnostic research has led to many world s first reports and has been adopted by other researchers in academia and industry. He authored more than seventy peer-reviewed journal papers, published more than ten invention disclosures in the IBM Technical Disclosure Bulletin, has served as reviewer of numerous proposals for publication in technical journals, and has won five IBM Research Division Awards. His key achievements include the design and fabrication of high-power, highly reliable, single mode diode lasers. Book Reviews Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Prof. em. Dr. Heinz Jackel, High Speed Electronics and Photonics, Swiss Federal Institute of Technology ETH Zurich, Switzerland The book Semiconductor Laser Engineering, Reliability and Diagnostics by Dr. P.W. Epperlein is a landmark in the recent literature on semiconductor lasers because it fills a longstanding gap between many excellent books on laser theory and the complex and challenging endeavor to fabricate these devices reproducibly and reliably in an industrial, real world environment. Having worked myself in the early research and development of high power semiconductor lasers, I appreciate the competent, complete and skillful presentation of these three highly interrelated topics, where small effects have dramatic consequences on the success of a final product, on the ultimate performance and on the stringent reliability requirements, which are the name of the game. As the title suggests the author addresses three tightly interwoven and critical topics of state-of-the-art power laser research. The three parts are: device and mode stability engineering (chapter 1, 2), reliability mechanisms and reliability assessment strategies (chapter 3, 4, 5, 6) and finally material and device diagnostics (chapter 7, 8, 9) all treated with a strong focus on the implementation. This emphasis on the complex practical aspects for a large-scale power laser fabrication is a true highlight of the book. The subtle interplay between laser design, reliability strategies, advanced failure analysis and characterization techniques are elaborated in a very rigorous and scientific way using a very clear and easy to read representation of the complex interrelation of the three major topics. I will abstain from trying to provide a complete account of all the topics but mainly concentrate on the numerous highlights. The first part 1 Laser Engineering is divided in two chapters on basic electronic-optical, structural, material and resonator laser engineering on the one side, and on single mode control and stability at very high, still reliable power-levels with the trade-off between mirror damage, single mode stability on the other side. To round up the picture less well-known concepts and the state-of-the-art of large-area lasers, which can be forced into single-mode operation, are reviewed carefully. The subtle and complex interplay, which is challenging to optimize for a design for reliability and low stress as a major boundary condition is crucial for the design. The section gives a rather complete and well-referenced account of all relevant aspects, relations and trade-offs for understanding the rest of the book. The completeness of the presentation on power laser diode design based on basic physical and plausible arguments is mainly based on analytic mathematical relations as well as experiments providing a new and well-balanced addition for the power diode laser literature in particular. Modern 2D self-consistent electro-optical laser modeling including carrier hole burning and thermal effects this is important because the weak optical guiding and gain-discrimination depend critically on rather small quantities and effects, which are difficult to optimize experimentally is used in the book for simulation results, but is not treated separately. The novel and really original, gap-filling bulk of the book is elaborated by the author in a very clear way in the following four chapters in the part 2 Laser Reliability on laser degradation physics and mirror design and passivation at high power, followed then by two very application oriented chapters on reliability design engineering and practical reliability strategies and implementation procedures. This original combination of integral design and reliability aspects which are mostly neglected in standard literature is certainly a major plus of this book. I liked this second section as a whole, because it provides excellent insights in degradation physics on a high level and combines it in an interesting and skillful way with the less glamorous (unfortunately) but highly relevant reliability science and testing strategies, which is particularly important for devices operating at extreme optical stresses with challenging lifetime requirements in a real word environment. Finally, the last part 3 Laser Diagnostics comprising three chapters, is devoted mainly to advanced experimental diagnostics techniques for material integrity, mechanical stress, deep level defects, various dynamic laser degradation effects, surface- and interface quality, and most importantly heating and disordering of mirrors and mirror coatings. The topics of characterization techniques comprising micro-Raman- and micro-thermoreflectance-probing, 2K photoluminescence spectroscopy, micro-electroluminescence and photoluminescence scanning, and deep-level-transient spectroscopy have been pioneered by the author for the specific applications over many years guaranteeing many competent and well represented insights. These techniques are brilliantly discussed and the information distributed in many articles by the author has been successfully unified in a book form. In my personal judgment and liking, I consider the parts 2 and 3 on reliability and diagnostics as the most valuable and true novel contribution of the book, which in combination with the extremely well-covered laser design of part 1 clearly fill the gap in the current diode laser literature, which in this detail has certainly been neglected in the past. In summary, I can highly recommend this excellent, well-organized and clearly written book to readers who are already familiar with basic diode laser theory and who are active in the academic and industrial fabrication and characterization of semiconductor lasers. Due to its completeness, it also serves as an excellent reference of the current state-of-the-art in reliability engineering and device and material diagnostics. Needless to mention that the quality of the book, its representations and methodical structure meet the highest expectation and are certainly a tribute from the long and broad experience of the author in academic laser science and the industrial commercialization of high power diode lasers. In my opinion, this book was a pleasure to read and due to its quality and relevance deserves a large audience in the power diode laser community! Prof. em. Dr. Heinz Jackel, High Speed Electronics and Photonics, Swiss Federal Institute of Technology ETH Zurich, Switzerland June 16, 2013 ========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Dr. Chung-en Zah, Research Director, Semiconductor Technologies Research, S&T Division, Corning Incorporate, Corning NY, USA This book covers for the first time the three closely interrelated key laser areas of engineering (design), reliability and diagnostics in one book, written by the well-known practitioner in cutting-edge optoelectronics industries, Dr. Peter W. Epperlein. The book closes the gap in the current book literature and is thus a unique and excellent example of how to merge design, reliability and diagnostics aspects in a very professional, profound and complete manner. All physical and technological principles, concepts and practical aspects required for developing and fabricating highly-reliable high-power single-mode laser products are precisely specified and skilfully formulated along with all the necessary equations, figures, tables and worked-out examples making it easy to follow through the nine chapters. Hence, this unique book is a milestone in the diode laser literature and is an excellent reference book not only for diode laser researchers and engineers, but also diode laser users. The engineering part starts with a very informative and clear, well-presented account of all necessary basic diode laser types, principles, parameters and characteristics for an easy and quick understanding of laser functionality within the context of the book. Along with an elaborate and broad discussion of relevant laser material systems, applications, typical output powers, power-limiting factors and reliability tradeoffs, basic fabrication and packaging technologies, this excellent introductory section is well suited to become quickly and easily familiar with practical aspects and issues of diode laser technologies. Of special importance and high usefulness is the first analytic and quantitative discussion in a book on issues of coupling laser power into optical single mode fibers. The second section discusses in a well-balanced, competent and skilful way waveguide topics such as basic high-power design approaches, transverse vertical and lateral waveguide concepts, stability of the fundamental transverse lateral mode and fundamental mode waveguide optimization techniques by considering detrimental effects such as heating, carrier injection, spatial hole burning, lateral current spreading and gain profile variations. Less well-known approaches to force large-area lasers into a single mode operation are well-identified and carefully discussed in depth and breadth. All these topics are elaborated in a very complete, rigorous and scientific way and are clearly articulated and easy to read. In particular, the book works out the complex interaction between the many different effects to optimize high-power single-mode performance at ultimate reliability and thus is of great benefit to every researcher and engineer engaged in this diode laser field. Another novelty and highlight is, for the first time ever in book form, a comprehensive yet concise discussion of diode laser reliability related issues. These are elaborated in four distinct chapters comprising laser degradation physics and modes, optical strength enhancement approaches including mirror passivation/coating and non-absorbing mirror technologies, followed by two highly relevant product-oriented chapters on reliability design engineering concepts and techniques and an elaborate reliability test plan for laser chip and module product qualification. This original and novel approach to link laser design to reliability aspects and requirements provides both, most useful insight into degradation processes such as catastrophic optical mirror damage on a microscopic scale, and a wide selection of effective remedial actions. These accounts, which are of highest significance for lasers operating at the optical stress limit due to extremely high output power densities and most demanding lifetime requirements are very professionally prepared and discussed in an interesting, coherent and skilful manner. The diagnostics part, consisting of three very elaborate chapters, is most unique and novel with respect to other diode laser books. It discusses for the first time ever on a very high level and in a competent way studies on material integrity, impurity trapping effects, mirror and cavity temperatures, surface- and interface quality, mirror facet disorder effects, mechanical stress and facet coating instability, and diverse laser temperature effects, dynamic laser degradation effects and mirror temperature maps. Of highest significance to design, performance and reliability are the various correlations established between laser device and material parameters. The most different and sophisticated experiments, carried out by the author at micrometer spatial resolutions and at temperatures as low as 2K, provide highly valuable insights into laser and material quality parameters, and reveal for the first time the origins of high power limitations on an atomic scale due to local heating effects and deep level defects. It is of great benefit, that the experimental techniques such as Raman spectroscopy, various luminescence techniques, thermoreflectance and deep-level transient spectroscopy, pioneered by the author for the specific experiments on lasers, are discussed with great expertise in depth and breadth, and the numerous paper articles published by the author are now represented in this book. The book has an elaborate table of contents and index, which are very useful, over 200 illustrative figures and tables, and extensive lists of references to all technical topics at the end of each of the nine chapters, which make it easy to follow from cover to cover or by jumping in at random areas of special interest. Moreover, experimental and theoretical concepts are always illustrated by practical examples and data. I can highly recommend this extremely relevant, well-structured and well-formulated book to all practising researchers in industrial and academic diode laser R&D environments and to post-graduate engineering students interested in the actual problems of designing, manufacturing, testing, characterising and qualifying diode lasers. Due to its completeness and novel approach to combine design, reliability and diagnostics in the same book, it can serve as an ideal reference book as well, and it deserves to be welcomed wordwide by the addressed audience. Dr. Chung-en Zah, Research Director, Semiconductor Technologies Research, S&T Division, Corning Incorporate, Corning NY, USA =========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Cordinatore Prof. Lorenzo Pavesi, UNIVERSITA DEGLI STUDI DI TRENTO, Dipartimento di Fisica / Laboratorio di Nanoscienze This book represents a well thought description of three fundamental aspects of laser technology: the functioning principles, the reliability and the diagnostics. From this point of view, and, as far as I know, this is a unique example of a book where all these aspects are merged together resulting in a well-balanced presentation. This helps the reader to move with ease between different concepts since they are presented in a coherent manner and with the same terminology, symbols and definitions. The book reads well. Despite the subtitle indicates that it is a practical approach, the book is also correct from a formal point of view and presents the necessary equations and derivations to understand both the physical mechanisms and the practicalities via a set of useful formulas. In addition, there is the more important aspect of many real-life examples of how a laser is actually manufactured and which the relevant parameters that determine its behaviour are. It impresses the amounts of information that are given in the book: this would be more typical of a thick handbook on semiconductor laser than of an agile book. Dr. Epperlein was able to identify the most important concepts and to present them in a clear though concise way. I am teaching a course on Optoelectronics and I'm going to advise students to refer to this book, because it has all the necessary concepts and derivations for a systematic understanding of semiconductor lasers with many worked-out examples, which will help the student to grasp the actual problems of designing, manufacturing, testing and using semiconductor lasers. All the various concepts are joined to very useful figures, which, if provided to instructors as files, can be a useful add-on for the use of the book as text for teaching. Concepts are always detailed with numbers to give a feeling of their practical use. In conclusion, I do find the book suitable for my teaching duties and will refer it to my students. Prof. Dr. Lorenzo Pavesi, Head of the Department of Physics, Head of the Nanoscience Laboratory, University of Trento, Italy 31 May 2013 =========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Robert W. Herrick, Ph.D., Senior Component Reliability Engineer, Intel Corp., Santa Clara, California, USA Dr. Epperlein has done the semiconductor laser community a great service, by releasing the most complete book on the market on the practical issues of how to make reliable semiconductor lasers. While dozens of books have been written over the past couple of decades on semiconductor laser design, only a handful have been written on semiconductor laser reliability. Prior to the release of this book, perhaps 40% of the material could be obtained elsewhere by combining five books: one on laser design, one on laser reliability, one on reliability calculations, and a couple of laser review books. Another 40% could be pieced together by collecting 50 -100 papers on the subjects of laser design, laser fabrication, characterization, and reliability. The remaining 20% have not previously been covered in any comprehensive way. Only the introductory material in the first half of the first chapter has good coverage elsewhere. The large majority of the knowledge in this book is generally held as trade secret by those with the expertise in the field, and most of those in the know are not free to discuss. The author was fortunate enough to work for the first half of his career in the IBM research labs, with access to unparalleled resources, and the ability to publish his work without trade secret restrictions. The results are still at the cutting edge of our understanding of semiconductor laser reliability today, and go well beyond the empirical black box approach many use of try everything, and see what works. The author did a fine job of pulling together material from many disparate fields. Dr. Epperlein has particular expertise in high power single mode semiconductor lasers, and those working on those type of lasers will be especially interested in this book, as there has never been a book published on the fabrication and qualification of such lasers before. But those in almost any field of semiconductor lasers will learn items of interest about device design, fabrication, reliability, and characterization. Unlike most other books, which intend to convey the scientific findings or past work of the author, this one is written more as a how to manual, which should make it more accessible and useful to development engineers and researchers in the field. It also has over 200 figures, which make it easier to follow. As with many books of this type, it is not necessary to read it from cover-to-cover; it is best skimmed, with deep diving into any areas of special interest to the reader. The book is remarkable also for how comprehensive it is even experts will discover something new and useful. Dr. Epperlein s book is an essential read for anyone looking to develop semiconductor lasers for anything other than pure research use, and I give it my highest recommendation. Robert W. Herrick, Ph.D., Senior Component Reliability Engineer, Intel Corp., Santa Clara, California, USA

This comprehensive volume provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications such as high-k/metal gate cleaning, copper/low-k cleaning, high dose implant stripping, and silicon and SiGe passivation. The theory and fundamental physics associated with wet etching and wet cleaning is reviewed, plus the surface and colloidal aspects of wet processing. Formulation development practices and methodology are presented along with the applications for preventing copper corrosion, cleaning aluminum lines, and other sensitive layers. This is a must-have reference for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing.

From the Reviews...

"This handbook will be a valuable resource for many academic libraries. Many engineering librarians who work with a variety of programs (including, but not limited to Materials Engineering) should include this work in their collection. My recommendation is to add this work to any collection that serves a campus with a materials/manufacturing/electrical/computer engineering programs and campuses with departments of physics and/or chemistry with large graduate-level enrollment."
--Randy Wallace, Department Head, Discovery Park Library, University of North Texas

Fault analysis of highly-integrated semiconductor circuits has become an indispensable discipline in the optimization of product quality. Integrated Circuit Failure Analysis describes state-of-the-art procedures for exposing suspected failure sites in semiconductor devices. The author adopts a hands-on problem-oriented approach, founded on many years of practical experience, complemented by the explanation of basic theoretical principles. Features include: Advanced methods in device preparation and technical procedures for package inspection and semiconductor reliability. • Illustration of chip isolation and step-by-step delayering of chips by wet chemical and modern plasma dry etching techniques. • Particular analysis of bipolar and MOS circuits, although techniques are equally relevant to other semiconductors. • Advice on the choice of suitable laboratory equipment. • Numerous photographs and drawings providing guidance for checking results. Focusing on modern techniques, this practical text will enable both academic and industrial researchers and IC designers to expand the range of analytical and preparative methods at their disposal and to adapt to the needs of new technologies.

Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.

This book describes the physical mechanism of high-frequency (radio-frequency) capacitive discharge (RFCD) of low and medium pressure and the properties of discharge plasma in detail. The main properties and characteristics of RFCD, the features of electric breakdown in a high-frequency field are also investigated. The properties of near-electrode layers of a spatial discharge, the nature of the electric field in them, and the processes of charge transport to electrodes are explored. The work is intended for scientists engaged in gas discharge physics and low-temperature plasmas, graduate students and students of physics, physical chemistry, and relevant specialties.

Das Buch beschreibt die Konzepte siliziumbasierter MOS-Bauelemente f r Logikanwendungen (CMOS), Speicheranwendungen (DRAM, SRAM, EEPROM) und leistungselektronische Anwendungen. Der Autor untersucht die Quellen, die in den vergangenen 30 Jahren diskutiert wurden. Er beschreibt, wie die einzelnen Konzepte technologisch umgesetzt wurden und geht auf die Vor- und Nachteile der Konzepte ein. Er erl utert die Funktionsweise und Charakteristiken der elektronischen Bauelemente, die mit dem jeweiligen Konzept realisiert wurden.

Das Buch ist besonders geeignet f r Ingenieure und Physiker, die sich mit neuartigen bzw. alternativen Bauelementarchitekturen und deren Entwicklung besch ftigen.

Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications * Based on timely published and unpublished work written by expert authors * Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses * Describes the physical effects (quantum, tunneling) of MOS devices * Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment * Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book MOS Devices for Low-Voltage and Low-Energy Applications explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." Prof. Joao A. Martino, University of Sao Paulo, Brazil

A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or more components. Featuring detailed figures and extensive references, this book: Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases Summarizes the data from the last 15-20 years of literature on the study of organometallic compounds, which include zinc, cadmium, or mercury and sulfur, selenium, or tellurium Classifies all materials according to the periodic table groups of their constituent atoms, that is, possible combinations of Zn, Cd, and Hg with chalcogens S, Se, and Te and additional components in the order of their group number Specifies the diagram type, possible phase transformations and physical-chemical interaction of the components, methods of equilibrium investigation, thermodynamic characteristics, and methods for sample preparation in each multinary database description Multinary Alloys Based on II-VI Semiconductors contains valuable material useful for obtaining nanoscale II-VI semiconductors and for preparing thin films of these semiconductor materials, as well as for exploring the biological and medicinal applications of organometallic compounds, and for identifying new compounds with necessary properties.

Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book" "introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips.

The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology.

Look inside for extensive coverage on: The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-electronics to nano-technology Semiconductor manufacturing handling and auditing processing to avoid ESD failures ESD, EOS, EMI, EMC, and latchup semiconductor component and system level testing to demonstrate product resilience from human body model (HBM), transmission line pulse (TLP), charged device model (CDM), human metal model (HMM), cable discharge events (CDE), to system level IEC 61000-4-2 testsESD on-chip design and process manufacturing practices and solutions to improve ESD semiconductor chip solutions, also practical off-chip ESD protection and system level solutions to provide more robust systemsSystem level concerns in servers, laptops, disk drives, cell phones, digital cameras, hand held devices, automobiles, and space applicationsExamples of ESD design for state-of-the-art technologies, including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, magnetic recording technology, micro-machines (MEMs) to nano-structures

"ESD Basics: From Semiconductor Manufacturing to Product Use" complements the author's series of books on ESD protection. For those new to the field, it is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic Era.

Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.

This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.