A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].

Dieses wichtige Referenzwerk behandelt die grundlegenden Konzepte der Photoleitfahigkeit und der photoleitenden Materialien. Mit Photoconductivity and Photoconductive Materials prasentiert Professor Kasap eine massgebliche Zusammenstellung der wesentlichen Grundsatze der Photoleitfahigkeit und stellt eine Auswahl aktueller photoleitfahiger Materialien vor. Der erste Band des zweibandigen Werks beginnt mit einer Darstellung der grundlegenden Konzepte und Definitionen. Es folgt eine Charakterisierung der verschiedenen Techniken auf Grundlage von stationarer, transienter und modulierter Photoleitfahigkeit, u.a. der neuen Methode der Ladungsextraktion durch linear steigende Spannung (CELIV). Auch die Physik der Terahertz-Photoleitfahigkeit sowie die Grundlagen der organischen Halbleiter LSoI werden behandelt. Der zweite Band beginnt mit einem umfassenden UEberblick uber eine Vielzahl unterschiedlicher photoleitfahiger Materialien, wobei der Schwerpunkt auf einige der wichtigsten Photoleiter gelegt wird, darunter hydriertes amorphes Silizium, Cadmium-Quecksilber-Tellurid, verschiedene Roentgenphotoleiter, Diamantfilme, Metallhalogenidperowskite, Nanodrahte und Quantenpunkte. Auch die Anwendungen der photoleitenden Antenne werden eroertert. Das Werk, das zahlreiche Beitrage fuhrender Autoren auf diesem Fachgebiet enthalt, bietet den Leserinnen und Lesern ausserdem: * Eine grundliche Einfuhrung in die Charakterisierung von Halbleitern mit Hilfe von Techniken der Photoleitfahigkeit, insbesondere gleichmassiger Beleuchtung und Phototrager-Gittertechniken * Eine umfassende Darstellung organischer Photoleiter mitsamt Informationen zu Photoerzeugung, Transport und Anwendungen im Druckbereich * Praktische Eroerterungen der transienten Lichtleitfahigkeit im Flugzeitverfahren inklusive Experimentiertechniken und Interpretationshinweisen * Eine eingehende Betrachtung der transienten Photoleitfahigkeit organischer Halbleiterschichten und neuartiger Techniken der transienten Photoleitfahigkeit Photoconductivity and Photoconductive Materials ist nicht nur ein wichtiges Referenzwerk fur Physiker in der Forschung, Materialwissenschaftler und Elektroingenieure, sondern auch ein unverzichtbares Nachschlagewerk fur Doktoranden und Studierende hoeherer Semester, die sich mit dem Bereich der optoelektronischen Materialien beschaftigen, sowie fur Forschende in der Industrie. * Ein umfassendes zweibandiges Werk mit Beitragen fuhrender Fachautoren, herausgegeben von einem angesehenen Forscher auf dem Gebiet der Photoleitfahigkeit

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general.

From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

This book provides comprehensive coverage of stress, defect formation and surface evolution in thin films. With its balanced coverage of theory, experiment and simulation and many homework problems, the text will be essential reading in senior undergraduate and graduate courses on thin films.

Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.

The authors illustrate the basic physics and materials science of conjugated polymers and their interfaces, particularly, but not exclusively, as they are applied to polymer-based light emitting diodes. The approach is to describe the basic physical and associated chemical principles that apply to these materials, which in many instances are different from those that apply to their inorganic counterparts. The main aim of the authors is to highlight specific issues and properties of polymer surfaces and interfaces that are relevant in the context of the emerging field of polymer-based electronics in general, and polymer-based light emitting diodes in particular. Both theoretical and experimental methods used in the study of these systems are discussed. This book will be of interest to graduate students and research workers in departments of physics, chemistry, electrical engineering and materials sciences studying polymer surfaces and interfaces and their application in polymer-based electronics.

This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.

Progress in nanoscale engineering, as well as an improved understanding of the physical phenomena at the nanometer scale, have contributed to the rapid development of novel nanostructured semiconducting materials and nanodevices. Using new approaches, semiconductor structures can be fabricated with sub-nanometer accuracy and precisely controlled electronic and optical properties. The immense technological potential and new exciting physics have stimulated interest in semiconductor nanostructures over several years. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented. Topics include: quantum dot theory, growth and optics; single quantum dot spectroscopy; charge and spin; Si/Ge quantum dot structures; bio-quantum dots; electric force microscopy and charge injection; transport; Si nanocrystals and nc-Si superlattices; Si/Ge nanostructures; bioactive nanostructures; lithographic techniques and lateral nanopatterning; semiconductor nanowires and nanotubes; metallic and rare-earth-doped nanoparticles; theoretical studies and numerical simulations in Si/SiGe nanostructures and applications of Group IV nanoscale materials.

The authors of this book present current research in the study of superconductivity. Topics discussed in this compilation include the effects of non-magnetic defects in hole doped cuprates; deep cryogenic refrigeration by photons based on the phonon deficit effect in superconductors; superconductivity driven by an anti-polar electric phase in high temperature superconducting materials; superconductive graphite intercalation compounds; a superconducting magnetic field concentrator with nanodimensional branches and slits; magnetic mechanisms of pairing in a strongly correlated electron system of copper oxides; two non-linear mechanisms of correlations between copper carriers in superconductivity and their microscopical descriptions; three dimensionality of the critical state and variational methods for magnetically anisotropic superconductors; theory of multi-band superconductivity; conserving approximation for the self-energy of the t-U-V-J model beyond the Hartree-Fock approximation; and superconductivity as a consequence of an ordering of zero-point oscillations in electron gas.

The study of superconductivity in solids was initiated in 1911 after the discovery of this phenomenon in ordinary metals by Kamerlingh-Onnes. This book presents the fundamentals of the modern microscopic theory of conventional and unconventional superconductivity in high-Tc cuprates and other systems.

Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

This book presents current research from across the globe in the study of superconductivity theory, materials and applications. Topics discussed include tunnelling spectroscopy of novel layered superconductors; stability conditions of high-Tc superconductors; a study of the superconducting phase in metallic superconductors; numerical calculation of trapped magnetic field for bulk superconductors; ion modified high-Tc Josephson junctions and SQUIDS; and vortices in high temperature superconductors.

This book provides an up-to-date report on the recent advances in theory and experiment of the unconventional copper-oxide (known as cuprate) and iron-arsenic (called pnictide) superconductors. This book includes some experimental results which lead to the observation of spin-fluctuation spectrum in cuprates and pnictides.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

This book presents topical research in the field of light-emitting diodes and the systems, uses and efficiency of optoelectronics. Topics discussed include fabricating high efficiency organic light-emitting diodes for flat panel displays and solid-state lighting; reliability estimation from the junction to the packaging of LED; next-generation intelligent and green energy LED backlighting 3D display; inorganic-organic hybrid emitting material fabricated by solvothermal synthesis; and, photonic bandgap defect structure based on IV-VI semiconductors.

This book presents and discusses research in the study of superconductivity. Topics discussed herein include applications of confined quantum field theory to condensed matter systems; thermodynamic properties of superconducting states; vortices in layered superconductors; superconductivity in highly correlated systems; combined effects of disorder and magnetic field in superconductors; and the critical currents and vortex dynamics in percolative superconductors.

The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

This book from MRS dedicated to III-Nitrides, focuses on recent developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers ( 400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.

Superconductivity is a phenomenon occurring in certain materials generally at very low temperatures, characterised by exactly zero electrical resistance and the exclusion of the interior magnetic field. Like ferromagnetism and atomic spectral lines, superconductivity is a quantum mechanical phenomenon. It cannot be understood simply as the idealisation of "perfect conductivity" in classical physics. Furthermore, superconductivity occurs in a wide variety of materials, including simple elements like tin and aluminium, various metallic alloys and some heavily-doped semiconductors. It does not occur in noble metals like gold and silver, nor in pure samples of ferromagnetic metals. This book gathers the latest research from around the globe in this dynamic field and highlights topics such as super-conducting miniundulators, super-conducting transitions in wire networks, the orbital physics of superconductors, the super-conducting circuits of Josephson junctions, and the types of stresses that affect super-conducting properties and behaviour.

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.