The subject of semiconductor physics today includes not only many of the aspects that constitute solid state physics, but also much more. It includes what happens at the nanoscale and at surfaces and interfaces, behavior with few interaction events and few carriers -- electrons and their quasi-particle holes -- in the valence bands, the exchange of energies in various forms, the coupling of energetic events over short and long length scales, quantum reversibility tied to macroscale linearity and eventually to nonlinearities, the thermodynamic and statistical consequences of fluctuation-dissipation, and others. This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what happens within the material can lead to insights into what happens in its use. The collection of four textbooks in the Electroscience series culminates in a comprehensive understanding of nanoscale devices - electronic, magnetic, mechanical and optical - in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.

Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books have taken on this task in the past, but their treatments tend either to pluck results from the literature and present them as received truths or to rely on unrealistically simple models. Bands and Photons in III-V Semiconductor Quantum Structures takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader would not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research in those fields. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader's understanding.

This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.
After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.

Dieses Lehrbuch bietet Ihnen einen kompakten und verstandlichen UEberblick uber die Physik von niedrigdimensionalen Elektronensystemen und den elektronischen Eigenschaften von Halbleiter-Nanostrukturen. Es eignet sich hervorragend fur Studierende in hoeheren Semestern, die fortgeschrittene Halbleiterphysik-Vorlesungen hoeren oder praktische Einsteigerliteratur in das Gebiet der niedrigdimensionalen Halbleiter suchen. Neu in der vorliegenden zweiten Auflage sind zwei Abschnitte uber zweidimensionale Elektronengase im transversalen Magnetfeld und resonante Tunneldioden, sowie eine Reihe von Fehlerkorrekturen und kleineren Erganzungen. Da man nicht alles sofort im Detail wissen muss, geht der Text bewusst nicht immer in die Tiefe, sondern ermoeglicht es Ihnen, sich eine erste UEbersicht uber die verschiedenen Bereiche zu verschaffen. Manche Dinge, allerdings, gehen sehr in die Tiefe, um Ihnen zu zeigen, welche Abgrunde sich hier und da ganz uberraschend auftun koennen. Damit der Einstieg in weiterfuhrende, englischsprachige Literatur leichter fallt, wurden die UEbersetzungen der wichtigsten Spezialausdrucke im Text eingearbeitet. Als Grundwissen sollten Sie etwas Quantenmechanik sowie einige Grundlagen der Halbleiterphysik und Halbleiterelektronik im Gepack haben. Diese finden Sie im Buch zu den Halbleiterphysik-Grundlagen vom gleichnamigen Autor oder naturlich auch in anderen Standardlehrbuchern.

Das vorliegende Buch gibt eine kompakte Einfuhrung in die Grundlagen der Festkoerperphysik, wobei der Schwerpunkt auf den elektrischen und magnetischen Materialeigenschaften liegt. Leser werden nicht nur die kompakte und anschauliche Herangehensweise schatzen, sondern auch die kurzen Abschnitte uber die Forschungsgeschichte der Festkoerperphysik, die mit wegweisenden Forschern wie Max Planck, Albert Einstein aber auch Heike Kamerlingh Onnes, Eugene Wigner oder Frederick Seitz verbunden ist. Diese helfen dabei, die Entwicklung der Festkoerperphysik und ihre unterschiedlichen Theorien und Modelle verstehen und einordnen zu koennen. Das Buch richtet sich an Studierende der Physik, Ingenieurwissenschaften und Materialwissenschaften bis zum Bachelor. Es kann durch seine anschaulichen Erklarungen und seinen didaktischen Ansatz auch als motivierende Vorstufe und unterstutzendes Begleitwerk beim Studium anspruchsvollerer Lehrbucher der Festkoerperphysik benutzt werden. Die dritte Auflage enthalt eine Reihe von Erweiterungen, besonders im Kapitel uber topologische Materialien.

In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.

The first advanced textbook to provide a useful introduction in a brief, coherent and comprehensive way, with a focus on the fundamentals. After having read this book, students will be prepared to understand any of the many multi-authored books available in this field that discuss a particular aspect in more detail, and should also benefit from any of the textbooks in photochemistry or spectroscopy that concentrate on a particular mechanism. Based on a successful and well-proven lecture course given by one of the authors for many years, the book is clearly structured into four sections: electronic structure of organic semiconductors, charged and excited states in organic semiconductors, electronic and optical properties of organic semiconductors, and fundamentals of organic semiconductor devices.

Semiconductors for Photocatalysis, Volume 97 covers the latest breakthrough research and exciting developments in semiconductor photocatalysts and electrodes for water splitting and CO2 reduction. It includes a broad range of materials such as metal-oxides, metal-nitrides, silicon, III-V semiconductors, and the emerging layered compounds. New to this volume are chapters covering the Fundamentals of Semiconductor Photoelectrodes, Charge Carrier Dynamics in Metal Oxide Photoelectrodes for Water Oxidation, Photophysics and Photochemistry at the Semiconductor/Electrolyte Interface for Solar Water Splitting, V Semiconductor Photoelectrodes, III-Nitride Semiconductor Photoelectrodes, and Rare Earth Containing Materials for Photoelectrochemical Water Splitting Applications. In addition, the design and modeling of photocatalysts and photoelectrodes and the fundamental mechanisms of water splitting and CO2 reduction is also discussed.

Principles and Applications of Organic Light Emitting Diodes (OLEDs)explores the ways in which the development of organic semiconductor materials is opening up new applications in electronic and optoelectronic luminescent devices. The book begins by covering the principles of luminescence and the luminescent properties of organic semiconductors. It then covers the development of luminescent materials for OLEDs, discussing the advantages and disadvantages of organic versus inorganic luminescent materials. The fabrication and characterization of OLEDs is also covered in detail, including information on, and comparisons of, vacuum deposition and solution techniques. Finally, applications of OLEDs are explored, including OLEDs in solid-state lighting, colored lighting, displays and potential future applications, such as ultra-thin and flexible technologies. This book is an excellent resource both for experts and newcomers to the field of organic optoelectronics and OLEDs. It is ideal for scientists working on optical devices, lighting, display and imaging technologies, and for all those engaged in research in photonics, luminescence and optical materials.

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.

The study of solids is one of the richest, most exciting, and most successful branches of physics. While the subject of solid state physics is often viewed as dry and tedious this new book presents the topic instead as an exciting exposition of fundamental principles and great intellectual breakthroughs. Beginning with a discussion of how the study of heat capacity of solids ushered in the quantum revolution, the author presents the key ideas of the field while emphasizing the deep underlying concepts. The book begins with a discussion of the Einstein/Debye model of specific heat, and the Drude/Sommerfeld theories of electrons in solids, which can all be understood without reference to any underlying crystal structure. The failures of these theories force a more serious investigation of microscopics. Many of the key ideas about waves in solids are then introduced using one dimensional models in order to convey concepts without getting bogged down with details. Only then does the book turn to consider real materials. Chemical bonding is introduced and then atoms can be bonded together to crystal structures and reciprocal space results. Diffraction experiments, as the central application of these ideas, are discussed in great detail. From there, the connection is made to electron wave diffraction in solids and how it results in electronic band structure. The natural culmination of this thread is the triumph of semiconductor physics and devices. The final section of the book considers magnetism in order to discuss a range of deeper concepts. The failures of band theory due to electron interaction, spontaneous magnetic orders, and mean field theories are presented well. Finally, the book gives a brief exposition of the Hubbard model that undergraduates can understand. The book presents all of this material in a clear fashion, dense with explanatory or just plain entertaining footnotes. This may be the best introductory book for learning solid state physics. It is certainly the most fun to read.

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

Dieses Lehrbuch wurde geschrieben, um Ihnen einen effizienten und verstandlichen Einstieg in die Halbleiterphysik und die Anwendungen der Halbleiterelektronik zu ermoeglichen. Es hilft Ihnen - auch wenn Sie vorher noch nichts uber Quantenmechanik etc. gehoert haben - sich das Grundwissen der Halbleiterphysik auf effiziente Weise anzueignen und zu lernen, was fur einen Einsteiger in diesem Gebiet wirklich wichtig ist. Das Buch beschrankt sich daher nur auf die allernoetigsten Grundlagen der elektronischen Eigenschaften von Volumenhalbleitern und deren Einsatz in Halbleiterbauelementen. Frei nach dem Motto "man muss nicht alles wissen" geht der Textes bewusst nicht immer in die Tiefe, um dann an anderen Stellen - wenn es dem besseren Verstandnis dient - detailliert auf Zusammenhange einzugehen. Zahlreiche typische UEbungsaufgaben sind mit vielen Details als Beispiele in den Text eingearbeitet und erleichtern Ihnen damit das Bestehen von Tutorien und Klausuren. Zusatzlich finden Sie im Text eingestreute "Hausaufgaben", die es sich zu loesen lohnt, wenn Sie ein tieferes Verstandnis der Materie suchen. Die vorliegende zweite Auflage ist inhaltlich im Wesentlichen mit der ersten Auflage identisch, enthalt aber zahlreiche Korrekturen und Verbesserungen, die von den aufmerksamen Leserinnen und Lesern der ersten Auflage eingebracht wurden. Details finden sich im Dank.

This compact undergraduate textbook provides a concise yet thorough introduction to the fundamentals of solid-state physics, while also briefly discussing the historical context surrounding key scholars in the field. The vivid explanations and unique didactic approach adopted in the book aim to generate interest in these subjects while also serving as a motivating primer and supporting companion for studying more detailed and advanced textbooks in solid-state physics. The book is also suitable as a quick refresher for students preparing for examinations. The third edition features many extensions, including an up-to-date discussion of topological materials, a rapidly developing area at the forefront of solid-state physics. Primarily concentrating on the electric and magnetic properties of materials, the book will benefit undergraduate students in the fields of physics, materials science, and electrical engineering.

The book has been designed as a textbook for graduate and postgraduate students of physics, material science, and engineering. This is the third edition of the textbook, that is updated to reflect recent works in the field. In this edition, some new topics have been introduced while some of the existing topics like phonons, Drude -Lorentz model, Fermi levels, electrons, and holes, etc. are modified. Moreover, the book has complete information on semiconductor devices like tunnel diode, Gunn diode, photodiode, photoconductive diode, varactor diode, solar cell, LED, semiconductor lasers, and semiconductor detectors. All the chapters have been supplemented by solved and unsolved examples. Some of the chapters illustrate areas of current interest in solid-state physics to give the student practical working knowledge of the subject text in a simple and lucid manner. There is a fair amount of detail in the examples and derivations given in the text. Each section of the book has exercises to reinforce the concepts, and problems have been added at the end of each chapter. The detailed coverage and pedagogical tools make this an ideal textbook for students and researchers enrolled in graduate and postgraduate courses of physics, material science, and engineering.

This thesis presents and discusses recent optical low-temperature experiments on disordered NbN, granular Al thin-films, and the heavy-fermion compound CeCoIn5, offering a unified picture of quantum-critical superconductivity. It provides a concise introduction to the respective theoretical models employed to interpret the experimental results, and guides readers through in-depth calculations supplemented with supportive figures in order to both retrace the interpretations and span the bridge between experiment and state-of-the art theory.

Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

Im Mittelpunkt des einfuhrenden Lehrbuchs fur Ingenieure und Physiker stehen die physikalischen Grundprinzipien. Die grundlegenden Sachverhalte und Gleichungen werden mit ausfuhrlichen Herleitungen prasentiert. Jedes Kapitel enthalt Zusammenfassungen sowie durchgerechnete Beispiele und Aufgaben (z. T. mit MATLAB zu loesen). Die 2., korrigierte Auflage wurde um eine Daten- und Formelsammlung erganzt. Kapitel zu aktuellen Trends und Tendenzen sowie Hinweise auf weiterfuhrende Literatur runden den Band ab. Loesungsvorschlage werden im Internet angeboten.

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.
Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.
With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area.
Chapters review electron diffraction techniques, including the methodology for observations and measurementsDiscusses the principles and applications of photoemission techniquesExamines alternative in situ characterisation techniques

Dieses Buch zur Experimentalphysik ist der vierte Band der lange erwarteten Ausarbeitung der uberaus beliebten Vorlesungen von Joachim Heintze. Dieser Band beschaftigt sich mit den Grundlagen zu den Wellenerscheinungen und der Optik, wie sie an der Universitat in den Experimentalphysikkursen im Bachelor-Studiengang gelehrt werden. Die Liebe des Autors fur die Physik und fur spannende und historische Experimente ist in das Buch eingegangen und in allen Kapiteln unvermindert zu spuren.Hier finden Sie alle fur das Bachelor- und das Nebenfachstudium der Physik relevanten Themen in anschaulicher und besonders gut verstandlicher Form mit vielen Abbildungen prasentiert. UEbungsaufgaben mit ausfuhrlichen Loesungen erleichtern die Prufungsvorbereitung. Ob Physik Ihr Hauptfach sein mag oder ein Begleitfach in jedem Fall werden Sie von den klaren Erlauterungen und den eingangigen Darstellungen profitieren und vieles mitnehmen, das Sie auf Ihrem weiteren Weg begleiten wird.

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.
The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.
* State-of-the-art information available for the first time as an all-in-source
* Extensive reference list making it an indispensable reference book
* Broad coverage from fundamental aspects up to industrial applications

Silicon photonics uses chip-making techniques to fabricate photonic circuits. The emerging technology is coming to market at a time of momentous change. The need of the Internet content providers to keep scaling their data centers is becoming increasing challenging, the chip industry is facing a future without Moore's law, while telcos must contend with a looming capacity crunch due to continual traffic growth. Each of these developments is significant in its own right. Collectively, they require new thinking in the design of chips, optical components, and systems. Such change also signals new business opportunities and disruption. Notwithstanding challenges, silicon photonics' emergence is timely because it is the future of several industries. For the optical industry, the technology will allow designs to be tackled in new ways. For the chip industry, silicon photonics will become the way of scaling post-Moore's law. New system architectures enabled by silicon photonics will improve large-scale computing and optical communications. Silicon Photonics: Fueling the Next Information Revolution outlines the history and status of silicon photonics. The book discusses the trends driving the datacom and telecom industries, the main but not the only markets for silicon photonics. In particular, developments in optical transport and the data center are discussed as are the challenges. The book details the many roles silicon photonics will play, from wide area networks down to the chip level. Silicon photonics is set to change the optical components and chip industries; this book explains how.