Without the transistor to regulate the flow of current in electronic systems, there would be no miniaturization of electronics. But the metal-oxide-semiconductor (or simply MOS) transistor-it replaced the bipolar transistor, which itself had made obsolete the hot and bulky vacuum tube--Bassett describes as "the base technology" of the electronic revolution of the late-twentieth century. From the calculator to the digital watch to the microprocessor, he writes, "the rise of the MOS transistor has made what was once ludicrous unremarkable." Bassett's work combines the technological with the corporate--the breakthroughs of individual innovators as well as the research and development power of companies like IBM, Intel, and Fairchild. Until now, no one has attempted a book-length scholarly history of this formidable subject. Bassett approaches the task with excellent credentials-a bachelor of science degree in electrical engineering and a PhD in the history of science. From our readers' reports: "An elegant narrative," Bassett's work explores "the invention of the MOS transistor, its incorporation into integrated circuits, and the tremendously positive market reaction to the availability of these circuits. . . . The story is tightly told, using contemporary literature and the results of interviews done by the author." Bassett relates the technical material "with skill and deftness. The industrial research and development process description is excellent." --Arthur L. Norberg Emeritus director of the Charles W. Babbage Institute, University of Minnesota "Were Ross Bassett to have accomplished no more than a documented history of MOS (metal oxide semiconductor) technology, explaining in particular its unexpected triumph over the bipolar transistor as the basis for the semiconductor industry, he would have made a substantial contribution to the history of electrical engineering and the history of computing. But he has achieved much more than that. He has embedded the invention, development, and ultimate dominance of the MOS in the main themes of the history of modern technology, deepening our understanding of the complex process of innovation in the corporate setting. He has managed to get down to the bench level when discussing the technology and up into the executive offices when discussing corporate strategies. As any good history does, it tells us where we are by telling us how we got here, replacing legend with critical understanding. --Michael S. Mahoney Princeton University

Polymer electronics is the science behind many important new developments in technology, such as the flexible electronic display (e-ink) and many new developments in transistor technology. Solar cells, light-emitting diodes, and transistors are all areas where plastic electronics is likely to, or is already having, a serious impact on our daily lives. With polymer transistors and light-emitting diodes now being commercialised, there is a clear need for a pedagogic text that discusses the subject in a clear and concise fashion suitable for senior undergraduate and graduate students. The content builds on what has been learnt in an elementary (core) course in solid state physics and electronic behaviour, but care has been taken to ensure that important aspects such as the synthesis of these polymers are not overlooked. The chemistry is treated in a manner appropriate to students of physics. Polymer Electronics presents a thorough discussion of the physics and chemistry behind this new and important area of science, appealing to all physical scientists with an interest in the field.

Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The author begins by covering a range of essential physical principles. He then goes on to cover both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. The use of Monte Carlo simulation methods is explained in detail. Many homework exercises are provided and there are a variety of worked examples. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.

Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss non-linear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of semiconductor devices.

The study of solids is one of the richest, most exciting, and most successful branches of physics. While the subject of solid state physics is often viewed as dry and tedious this new book presents the topic instead as an exciting exposition of fundamental principles and great intellectual breakthroughs. Beginning with a discussion of how the study of heat capacity of solids ushered in the quantum revolution, the author presents the key ideas of the field while emphasizing the deep underlying concepts. The book begins with a discussion of the Einstein/Debye model of specific heat, and the Drude/Sommerfeld theories of electrons in solids, which can all be understood without reference to any underlying crystal structure. The failures of these theories force a more serious investigation of microscopics. Many of the key ideas about waves in solids are then introduced using one dimensional models in order to convey concepts without getting bogged down with details. Only then does the book turn to consider real materials. Chemical bonding is introduced and then atoms can be bonded together to crystal structures and reciprocal space results. Diffraction experiments, as the central application of these ideas, are discussed in great detail. From there, the connection is made to electron wave diffraction in solids and how it results in electronic band structure. The natural culmination of this thread is the triumph of semiconductor physics and devices. The final section of the book considers magnetism in order to discuss a range of deeper concepts. The failures of band theory due to electron interaction, spontaneous magnetic orders, and mean field theories are presented well. Finally, the book gives a brief exposition of the Hubbard model that undergraduates can understand. The book presents all of this material in a clear fashion, dense with explanatory or just plain entertaining footnotes. This may be the best introductory book for learning solid state physics. It is certainly the most fun to read.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Revised and fully up-dated, the second edition of this graduate textbook offers a comprehensive explanation of the technology and physics of LEDs such as infrared, visible-spectrum, ultraviolet, and white LEDs made from III-V semiconductors. Elementary properties such as electrical and optical characteristics are reviewed, followed by the analysis of advanced device structures. With nine additional chapters, the treatment of LEDs has been vastly expanded, including new material on device packaging, reflectors, UV LEDs, III-V nitride materials, solid-state sources for illumination applications, and junction temperature. Radiative and non-radiative recombination dynamics, methods for improving light extraction, high-efficiency and high-power device designs, white-light emitters with wavelength-converting phosphor materials, optical reflectors, and spontaneous recombination in resonant-cavity structures are discussed in detail. With exercises, solutions, and illustrative examples, this textbook will be of interest to scientists and engineers working on LEDs and graduate students in electrical engineering, applied physics, and materials science.

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.

Die Grundlagen der Mikroelektronik werden kompakt und in leicht verstandlicher Form vorgestellt. Der Leser erfahrt, wie integrierte Schaltkreise hergestellt werden, wie sie funktionieren und welche Bauelemente sich realisieren lassen."

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The authors also introduce the operating principles of other devices, including the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs. The book comes with a complete set of homework problems and a web link to MATLAB programs.

Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Fur zahlreiche neue Anwendungen vor allem in der Kommunikationstechnik sind die III-V-Verbindungshalbleiter die technologische Basis. Entsprechend wertvoll wird das Wissen uber die Herstellungstechniken von Bauelementen fur integrierte Mikrowellenschaltungen, denen dieses Werk gewidmet ist. Es wendet sich als Lehr- und Fachbuch an Studenten und Entwicklungsingenieure, denen der Einstieg in dieses Gebiet durch den methodischen Ansatz und den Verweis auf die aktuelle internationale Fachliteratur erleichtert wird. Besonders hervorzuheben ist die ausfuhrliche Behandlung von Halbleiter-Heterostukturen.