This book provides a methodological understanding of the theoretical and technical limitations to the longevity of Moore's law. The book presents research on factors that have significant impact on the future of Moore's law and those factors believed to sustain the trend of the last five decades. Research findings show that boundaries of Moore's law primarily include physical restrictions of scaling electronic components to levels beyond that of ordinary manufacturing principles and approaching the bounds of physics. The research presented in this book provides essential background and knowledge to grasp the following principles: Traditional and modern photolithography, the primary limiting factor of Moore's law Innovations in semiconductor manufacturing that makes current generation CMOS processing possible Multi-disciplinary technologies that could drive Moore's law forward significantly Design principles for microelectronic circuits and components that take advantage of technology miniaturization The semiconductor industry economic market trends and technical driving factors The complexity and cost associated with technology scaling have compelled researchers in the disciplines of engineering and physics to optimize previous generation nodes to improve system-on-chip performance. This is especially relevant to participate in the increased attractiveness of the Internet of Things (IoT). This book additionally provides scholarly and practical examples of principles in microelectronic circuit design and layout to mitigate technology limits of previous generation nodes. Readers are encouraged to intellectually apply the knowledge derived from this book to further research and innovation in prolonging Moore's law and associated principles.

The book deals with applications of the AdS/CFT correspondence to strongly coupled condensed matter systems. In particular, it concerns with the study of thermo-electric transport properties of holographic models exhibiting momentum dissipation and their possible applications to the transport properties of strange metals. The present volume constitutes one of the few examples in the literature in which the topic is carefully reviewed both from the experimental and theoretical point of view, including not only holographic results but also standard condensed matter achievements developed in the past decades. This work might be extremely useful both for scientific and pedagogical purposes.

The subject of semiconductor physics today includes not only many of the aspects that constitute solid state physics, but also much more. It includes what happens at the nanoscale and at surfaces and interfaces, behavior with few interaction events and few carriers -- electrons and their quasi-particle holes -- in the valence bands, the exchange of energies in various forms, the coupling of energetic events over short and long length scales, quantum reversibility tied to macroscale linearity and eventually to nonlinearities, the thermodynamic and statistical consequences of fluctuation-dissipation, and others. This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what happens within the material can lead to insights into what happens in its use. The collection of four textbooks in the Electroscience series culminates in a comprehensive understanding of nanoscale devices - electronic, magnetic, mechanical and optical - in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

This book is dedicated to field emission electronics, a promising field at the interface between "classic" vacuum electronics and nanotechnology. In addition to theoretical models, it includes detailed descriptions of experimental and research techniques and production technologies for different types of field emitters based on various construction principles. It particularly focuses on research into and production of field cathodes and electron guns using recently developed nanomaterials and carbon nanotubes. Further, it discusses the applications of field emission cathodes in new technologies such as light sources, flat screens, microwave and X-ray devices.

This thesis presents an experimental study of ordering phenomena in rare-earth nickelate-based heterostructures by means of inelastic Raman light scattering and elastic resonant x-ray scattering (RXS). Further, it demonstrates that the amplitude ratio of magnetic moments at neighboring nickel sites can be accurately determined by RXS in combination with a correlated double cluster model, and controlled experimentally through structural pinning of the oxygen positions in the crystal lattice. The two key outcomes of the thesis are: (a) demonstrating full control over the charge/bond and spin order parameters in specifically designed praseodymium nickelate heterostructures and observation of a novel spin density wave phase in absence of the charge/bond order parameter, which confirms theoretical predictions of a spin density wave phase driven by spatial confinement of the conduction electrons; and (b) assessing the thickness-induced crossover between collinear and non-collinear spin structures in neodymium nickelate slabs, which is correctly predicted by drawing on density functional theory.

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.

This thesis elucidates electron correlation effects in topological matter whose electronic states hold nontrivial topological properties robust against small perturbations. In addition to a comprehensive introduction to topological matter, this thesis provides a new perspective on correlated topological matter. The book comprises three subjects, in which electron correlations in different forms are considered. The first focuses on Coulomb interactions for massless Dirac fermions. Using a perturbative approach, the author reveals emergent Lorentz invariance in a low-energy limit and discusses how to probe the Lorentz invariance experimentally. The second subject aims to show a principle for synthesizing topological insulators with common, light elements. The interplay between the spin-orbit interaction and electron correlation is considered, and Hund's rule and electron filling are consequently found to play a key role for a strong spin-orbit interaction important for topological insulators. The last subject is classification of topological crystalline insulators in the presence of electron correlation. Unlike non-interacting topological insulators, such two- and three-dimensional correlated insulators with mirror symmetry are demonstrated to be characterized, respectively, by the Z4 and Z8 group by using the bosonization technique and a geometrical consideration.

This book reviews progress towards quantum simulators based on photonic and hybrid light-matter systems, covering theoretical proposals and recent experimental work. Quantum simulators are specially designed quantum computers. Their main aim is to simulate and understand complex and inaccessible quantum many-body phenomena found or predicted in condensed matter physics, materials science and exotic quantum field theories. Applications will include the engineering of smart materials, robust optical or electronic circuits, deciphering quantum chemistry and even the design of drugs. Technological developments in the fields of interfacing light and matter, especially in many-body quantum optics, have motivated recent proposals for quantum simulators based on strongly correlated photons and polaritons generated in hybrid light-matter systems. The latter have complementary strengths to cold atom and ion based simulators and they can probe for example out of equilibrium phenomena in a natural driven-dissipative setting. This book covers some of the most important works in this area reviewing the proposal for Mott transitions and Luttinger liquid physics with light, to simulating interacting relativistic theories, topological insulators and gauge field physics. The stage of the field now is at a point where on top of the numerous theory proposals; experiments are also reported. Connecting to the theory proposals presented in the chapters, the main experimental quantum technology platforms developed from groups worldwide to realize photonic and polaritonic simulators in the laboratory are also discussed. These include coupled microwave resonator arrays in superconducting circuits, semiconductor based polariton systems, and integrated quantum photonic chips. This is the first book dedicated to photonic approaches to quantum simulation, reviewing the fundamentals for the researcher new to the field, and providing a complete reference for the graduate student starting or already undergoing PhD studies in this area.

This book addresses a wide range of topics relating to the properties and behavior of condensed matter under extreme conditions such as intense magnetic and electric fields, high pressures, heat and cold, and mechanical stresses. It is divided into four sections devoted to condensed matter theory, molecular chemistry, theoretical physics, and the philosophy and history of science. The main themes include electronic correlations in material systems under extreme pressure and temperature conditions, surface physics, the transport properties of low-dimensional electronic systems, applications of the density functional theory in molecular systems, and graphene. The book is the outcome of a workshop held at the University of Catania, Italy, in honor of Professor Renato Pucci on the occasion of his 70th birthday. It includes selected invited contributions from collaborators and co-authors of Professor Pucci during his long and successful career, as well as from other distinguished guest authors.

The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

This book presents the latest results of quantum properties of light in the nanostructured environment supporting surface plasmons, including waveguide quantum electrodynamics, quantum emitters, strong-coupling phenomena and lasing in plasmonic structures. Different approaches are described for controlling the emission and propagation of light with extreme light confinement and field enhancement provided by surface plasmons. Recent progress is reviewed in both experimental and theoretical investigations within quantum plasmonics, elucidating the fundamental physical phenomena involved and discussing the realization of quantum-controlled devices, including single-photon sources, transistors and ultra-compact circuitry at the nanoscale.

This thesis provides a detailed introduction to quantum oscillation measurement and analysis and offers a connection between Fermi surface properties and superconductivity in high-temperature superconductors. It also discusses the field of iron-based superconductors and tests the models for the appearance of nodes in the superconducting gap of a 111-type pnictide using quantum oscillation measurements combined with band structure calculation. The same measurements were carried out to determine the quasiparticle mass in BaFe2(As1-xPx)2, which is strongly enhanced at the expected quantum critical point. While the lower superconducting critical field shows evidence of quantum criticality, the upper superconducting critical field is not influenced by the quantum critical point. These findings contradict conventional theories, demonstrating the need for a theoretical treatment of quantum critical superconductors, which has not been addressed to date. The quest to discover similar evidence in the cuprates calls for the application of extreme conditions. As such, quantum oscillation measurements were performed under high pressure in a high magnetic field, revealing a negative correlation between quasiparticle mass and superconducting critical temperature.

This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

This book covers high-transition temperature (Tc) s-wave superconductivity and the neighboring Mott insulating phase in alkali-doped fullerides. The author presents (1) a unified theoretical description of the phase diagram and (2) a nonempirical calculation of Tc. For these purposes, the author employs an extension of the DFT+DMFT (density-functional theory + dynamical mean-field theory). He constructs a realistic electron-phonon-coupled Hamiltonian with a newly formulated downfolding method. The Hamiltonian is analyzed by means of the extended DMFT. A notable aspect of the approach is that it requires only the crystal structure as a priori knowledge. Remarkably, the nonempirical calculation achieves for the first time a quantitative reproduction of the experimental phase diagram including the superconductivity and the Mott phase. The calculated Tc agrees well with the experimental data, with the difference within 10 K. The book provides details of the computational scheme, which can also be applied to other superconductors and other phonon-related topics. The author clearly describes a superconducting mechanism where the Coulomb and electron -phonon interactions show an unusual cooperation in the superconductivity thanks to the Jahn-Teller nature of the phonons.

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

This book gives guidance to solve problems in electromagnetics, providing both examples of solving serious research problems as well as the original results to encourage further investigations. The book contains seven chapters on various aspects of resonant wave scattering, each solving one original problem. All of them are unified by the authors' desire to show advantages of rigorous approaches at all stages, from the formulation of a problem and the selection of a method to the interpretation of results. The book reveals a range of problems associated with wave propagation and scattering in natural and artificial environments or with the design of antennas elements. The authors invoke both theoretical (analytical and numerical) and experimental techniques for handling the problems. Attention is given to mathematical simulations, computational efficiency, and physical interpretation of the experimental results. The book is written for students, graduate students and young researchers.

This thesis explores thermal transport in selected rare-earth-based intermetallic compounds to answer questions of great current interest. It also sheds light on the interplay of Kondo physics and Fermi surface changes. By performing thermal conductivity and electrical resistivity measurements at temperatures as low as 25mK, the author demonstrates that the Wiedemann-Franz law, a cornerstone of metal physics, is violated at precisely the magnetic-field-induced quantum critical point of the heavy-fermion metal YbRh2Si2. This first-ever observation of a violation has dramatic consequences, as it implies a breakdown of the quasiparticle picture. Utilizing an innovative technique to measure low-temperature thermal transport isothermally as a function of the magnetic field, the thesis interprets specific, partly newly discovered, high-field transitions in CeRu2Si2 and YbRh2Si2 as Lifshitz transitions related to a change in the Fermi surface. Lastly, by applying this new technique to thermal conductivity measurements of the skutterudite superconductor LaPt4Ge12, the thesis proves that the system is a conventional superconductor with a single energy gap. Thus, it refutes the widespread speculations about unconventional Cooper pairing in this material.

This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

This textbook is aimed at second-year graduate students in Physics, Electrical Engineer ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan tization and elementary excitations in solids, of the dielectric properties of semicon ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.