The International Winter School on Electronic Properties of Conjugated Polymers held March 14-21,1987, in Kirchberg (Austria) was a sequel to a meeting held in Kirchberg two years before on a similar subject. The 1987 winter school was organized in cooperation with the "Bundesministerium fiir Wissenschaft und Forschung" in Austria and the "Bundesministerium fiir Forschung und Technologie" in the Federal Republic of Germany. The basic idea of the meeting was to provide an opportunity for experienced scientists from universities and industry to discuss their most recent re- sults and for students and young scientists to inform themselves about the present state of the research in this field. As in 1985, the scientific interest was concentrated on the electronic structure of various conjugated polymers and related compounds. The focus of interest in the field now appears to have broadened and cov- ers not only conductivity and relaxation phenomena of polyacetylene but also nonlinear optical properties, highly oriented and single-crystal poly- mers, and electrochemical and opto-electrochemical properties of special materials such as polypyrrole and polyaniline. Exciting results on conduc- tivity - the mass specific conductivity (i.e., the conductivity divided by the density) of polyacetylene is more than twice that of copper (!) - and a detailed interpretation of the meaning of conjugation length are reported.

Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also for graduate and postgraduate students and all those who would like to get acquaintained with this vivid area of the materials science.

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope."

This is the first volume of a comprehensive two-volume treatise on superconductivity that represents the first such publication since the earlier work by R. Parks. It systematically reviews the basic physics and recent advances in the field. Leading researchers describe the state of the art in conventional phonon-induced superconductivity, high-Tc superconductivity, and novel superconductivity. After an introduction and historical overview, the leaders in the special fields of research give a comprehensive survey of the basics and the state of the art in chapters covering the entire field of superconductivity, including conventional and unconventional superconductors. Important new results are reported in a manner intended to stimulate further research. Numerous illustrations, diagrams and tables make this book especially useful as a reference work for students, teachers, and researchers. The second volume treats novel superconductors.

Ferromagnetism of metallic systems, especially those including transition metals, has been a controversial subject of modern science for a long time. This controversy sterns from the apparent dual character of the d-electrons responsible for magnetism in transition metals, i.e., they are itinerant elec trons described by band theory in their ground state, while at finite tem peratures they show various properties that have long been attributed to a system consisting of local magnetic moments. The most familiar example of these properties is the Curie-Weiss law of magnetic susceptibility obeyed by almost all ferromagnets above their Curie temperatures. At first the problem seemed to be centered around whether the d-elec trons themselves are localized or itinerant. This question was settled in the 1950s and early 1960s by various experimental investigations, in particular by observations of d-electron Fermi surfaces in ferromagnetic transition metals. These observations are generally consistent with the results of band calculations. Theoretical investigations since then have concentrated on explaining this dual character of d-electron systems, taking account of the effects of electron-electron correlations in the itinerant electron model. The problem in physical terms is to study the spin density fluctuati.ons, which are ne glected in the mean-field or one-electron theory, and their influence on the physical properties."

The fourth edition of "Solid Surfaces, Interfaces and Thin Films" has been used meanwhile as a standard textbook around the world at many universities and research institutions. Even though surface and interface physics have become a mature science branch, their theoretical concepts and experimental techniques are of higher importance than ever before because of their impact on nanostructure physics. Surface and interface physics form the basis for modern nanoscience, be it in quantum electronics, in catalysis, in corrosion, or in lubrication research. This explains the ever-growing demand for education in these elds. It was therefore time to carefully revise the book and bring it up to latest dev- opments both in fundamental research and in application. Concerning new ma- rial aspects topics about group III nitride surfaces and high k-oxide/semiconductor heterostructures have been included. Recent developments in these material classes are of essential importance for high-speed/high-power electronics and advanced - based CMOS technology on the nanometer scale. The novel eld of spin electronics or spintronics having been initiated by the detection of the giant magnetoresistance (GMR) by Peter Grunberg and Albert Fert (Nobel Prize 2007) required a more extensive consideration of anisotropy effects in thin magnetic lms. For the devel- ment of purely electrical spin switching devices based on spin effects rather than on semiconductor space charge layers, a prerequisite for high-speed, low-power sp- tronics, the spin-transfer torque mechanism shows some promise. Correspondingly this topic is discussed in direct connection with the GMR in this new edition.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

This book is intended to provide a clear and unified introduction to the physics of matter at low temperatures, and to do so at a level accessible to researchers new to the field and to graduate and senior undergraduate students. Rapid scientific progress made over the last seven years in a number of specific areas-for example, high-Tc superconductivity and the quantum Hall effect-has inevitably rendered our earlier Matter at Low Temperatures somewhat out of date. We have therefore taken the opportunity to revise and amend the text in its entirety and, at the same time, to furnish it with what we believe to be a more apt title, emphasizing that it is with the physics of low temperatures that we are particularly concerned. Like its predecessor, Low-Temperature Physics is devoted to the fascinating and diverse phenomena that occur under conditions of extreme cold, many of which have no analogue at all in the everyday world at room temperature.

Japanese semiconductor firms are well known for obtaining dynamics in a short period of time and achieving even global leadership. A significant portion of their success are attributable to cooperative interfirm relations and the development of intermediate organizational structure based on long-term relationship between firms. The purpose of this book is to explain how interfirm relations contributed to their dynamics during the golden age of the semiconductor industry. Meanwhile this book clarifies the real source of dynamics in interfirm relations and how the firms have interacted. The author concludes that the competitive-cum-cooperative (CCC) interfirm interaction are observed. Quantitative and qualitative findings show that firms enjoy not only flexible cooperation based synergy effects, but also dynamics market-like effects by creating competition among partners through CCC interaction.

The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield."

The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials' age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range of semiconductor properties or of a continually increasing number of the semiconductor device applications. Rather, the main purpose of this book is to provide an introductory perspective on the basic principles of semiconductor materials and their applications that are described in a relatively concise format in a single volume. Thus, this book should especially be suitable as an introductory text for a single course on semiconductor materials that may be taken by both undergraduate and graduate engineering students. This book should also be useful, as a concise reference on semiconductor materials, for researchers working in a wide variety of fields in physical and engineering sciences.

Fermi Surfaces of Low-Dimensional Organic Metals and Superconductors is an introduction to quasi-one- and quasi-two-dimensional organic metals and a review of the current knowledge on the electronic structure of these materials. The principal structural, electronic, and superconducting properties are described and illustrated with many examples. The book introduces the basic theoretical concepts necessary for the understanding of the experimental techniques and reviews in detail recent results in the investigation of the Fermi surface topology. The book is intended both as an introduction and as a reference book for active researchers.

Semiconductors have been used widely in signal-level or "brain" applications. Since their invention in 1948, transistors have revolutionized the electronics industry in computers, information processing, and communications. Now, however, semiconductors are being used more and more where consid erable "brawn" is required. Devices such as high-power bipolar junction tran sistors and power field-effect transistors, as well as SCRs, TRlACs, GTOs, and other semiconductor switching devices that use a p-n-p-n regenerative effect to achieve bistable action, are expanding the power-handling horizons of semicon ductors and finding increasing application in a wide range of products including regulated power supplies, lamp dimmers, motor drives, pulse modulators, and heat controls. HVDC and electric-vehicle propulsion are two additional areas of application which may have a very significant long range impact on the tech nology. The impact of solid-state devices capable of handling appreciable power levels has yet to be fully realized. Since it first became available in late 1957, the SCR or silicon-controlled rec tifier (also called the reverse blocking triode thyristor) has become the most popular member of the thyristor family. At present, SCRs are available from a large number of manufacturers in this country and abroad. SCR ratings range from less than one ampere to over three thousand amperes with voltage ratings in excess of three thousand volts."

Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics. Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations. This is needed to answer such novel questions as: Can one cool a drop of water by agitating an immersed nano-particle? How does heat flow if a Brownian particle pulls a polymer chain? Can one measure the free-energy of a system through a single realization of the associated stochastic process? This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers. It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.

I am indeed pleased to prepare this brief foreword for this book, written by several of my friends and colleagues in the Soviet Union. The book was first published in the Russian language in Moscow in 1975. The phenomenon of superconductivity was discovered in 1911 and promised to be important to the production of electromagnets since superconductors would not dissipate Joule heat. Unfortunate ly the first materials which were discovered to be superconducting reverted to the normal resistive state in magnetic fields of a few tesla. Thus the development that was hoped for by hundredths of a the early pioneers was destined to be delayed for over half a century. In 1961 the intermetallic compound NbaSn was found to be superconducting in a field of about 200 teslas. This breakthrough marked a turning point, and 50 years after the discovery of superconductivity an intensive period of technological development began. There are many applications of superconductivity that are now being pursued, but perhaps one of the most important is super conducting magnetic systems. There was a general feeling in the early 1960s that the intermetallic compounds and alloys that were found to retain superconductivity in the presence of high magnetic fields would make the commercialization of superconducting magnets a relatively simple matter. However, the next few years were ones of disillusionment; large magnets were found to be unstable, causing them to revert to the normal state at much lower magnetic fields than predicted."

For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design."

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Joseph F. White has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications. He is thoroughly grounded in the physics and math ematics of the field, but has primarily the engineer's viewpoint, combining basic knowledge with experience and ingenuity to gen erate practical designs under constraints of required performance and costs of development and production. As a result of his teach ing experience and numerous technical papers and oral presenta tions, he has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook. Dr. White believes that an engineer must have a good understand ing of semiconductor physics, a thorough knowledge of microwave circuit theory, at least an elementary acquaintance with transistor drivers, and the ability to check and refine a microwave circuit on a computer terminal to be qualified for modern, creative design of microwave semiconductor control components. These subjects are well covered in approximately the first half of the book; the second half treats the general and specific design of switches, at tenuators, limiters, duplexers, and phase shifters, with many ex amples drawn from his experience and that of others."

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

The study of cooperative phenomena is one of the dominant features of contem porary physics. Outside physics it has grown to a huge field of interdisciplinary investigation, involving all the natural sciences from physics via biology to socio logy. Yet, during the first few decades following the advent of quantum theory, the pursuit of the single particle or the single atom, as the case may be, has been so fascinating that only a small number of physicists have stressed the importance of collective behaviour. One outstanding personality among these few is Professor HERBERT FROHLICH. He has made an enormous contribution to the modern concept of cooperativity and has stimulated a whole generation of physicists. Therefore, it seemed to the editors very appropriate to dedicate a volume on "cooperative phenomena" to him on the occasion of his official retirement from his university duties. Nevertheless, in the course of carrying out this project, the editors have been somewhat amazed to find that they have covered the essentials of contemporary physics and its im pact on other scientific disciplines. It thus becomes clear how much HERBERT FROHLICH has inspired research workers and has acted as a stimulating discussion partner for others. FROHLICH is one of those exceptional scientists who have wor ked in quite different fields and given them an enormous impetus. Unfortunately, the number of scientists of such distinctive personality has been decreasing in our century."