Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics. Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations. This is needed to answer such novel questions as: Can one cool a drop of water by agitating an immersed nano-particle? How does heat flow if a Brownian particle pulls a polymer chain? Can one measure the free-energy of a system through a single realization of the associated stochastic process? This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers. It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.

I am indeed pleased to prepare this brief foreword for this book, written by several of my friends and colleagues in the Soviet Union. The book was first published in the Russian language in Moscow in 1975. The phenomenon of superconductivity was discovered in 1911 and promised to be important to the production of electromagnets since superconductors would not dissipate Joule heat. Unfortunate ly the first materials which were discovered to be superconducting reverted to the normal resistive state in magnetic fields of a few tesla. Thus the development that was hoped for by hundredths of a the early pioneers was destined to be delayed for over half a century. In 1961 the intermetallic compound NbaSn was found to be superconducting in a field of about 200 teslas. This breakthrough marked a turning point, and 50 years after the discovery of superconductivity an intensive period of technological development began. There are many applications of superconductivity that are now being pursued, but perhaps one of the most important is super conducting magnetic systems. There was a general feeling in the early 1960s that the intermetallic compounds and alloys that were found to retain superconductivity in the presence of high magnetic fields would make the commercialization of superconducting magnets a relatively simple matter. However, the next few years were ones of disillusionment; large magnets were found to be unstable, causing them to revert to the normal state at much lower magnetic fields than predicted."

For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design."

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Joseph F. White has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications. He is thoroughly grounded in the physics and math ematics of the field, but has primarily the engineer's viewpoint, combining basic knowledge with experience and ingenuity to gen erate practical designs under constraints of required performance and costs of development and production. As a result of his teach ing experience and numerous technical papers and oral presenta tions, he has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook. Dr. White believes that an engineer must have a good understand ing of semiconductor physics, a thorough knowledge of microwave circuit theory, at least an elementary acquaintance with transistor drivers, and the ability to check and refine a microwave circuit on a computer terminal to be qualified for modern, creative design of microwave semiconductor control components. These subjects are well covered in approximately the first half of the book; the second half treats the general and specific design of switches, at tenuators, limiters, duplexers, and phase shifters, with many ex amples drawn from his experience and that of others."

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

The study of cooperative phenomena is one of the dominant features of contem porary physics. Outside physics it has grown to a huge field of interdisciplinary investigation, involving all the natural sciences from physics via biology to socio logy. Yet, during the first few decades following the advent of quantum theory, the pursuit of the single particle or the single atom, as the case may be, has been so fascinating that only a small number of physicists have stressed the importance of collective behaviour. One outstanding personality among these few is Professor HERBERT FROHLICH. He has made an enormous contribution to the modern concept of cooperativity and has stimulated a whole generation of physicists. Therefore, it seemed to the editors very appropriate to dedicate a volume on "cooperative phenomena" to him on the occasion of his official retirement from his university duties. Nevertheless, in the course of carrying out this project, the editors have been somewhat amazed to find that they have covered the essentials of contemporary physics and its im pact on other scientific disciplines. It thus becomes clear how much HERBERT FROHLICH has inspired research workers and has acted as a stimulating discussion partner for others. FROHLICH is one of those exceptional scientists who have wor ked in quite different fields and given them an enormous impetus. Unfortunately, the number of scientists of such distinctive personality has been decreasing in our century."

Electronic Properties of Fullerenes and other Novel Materials gives an overview of the state-of-the-art research. It presents most recent results on preparation, experimental analysis by electron spectroscopy, infrared and Raman spectroscopy, luminescence, and nonlinear optical, as well as possible technological applications. Emphasis is also placed on the superconducting properties of Fullerenes. The introductory and advanced contributions provide a good survey of the current status of this rapidly developing field.

Since the discovery of superconductivity in 1911 by H. Kamerlingh Onnes, of the order of half a billion dollars has been spent on research directed toward understanding and utiliz ing this phenomenon. This investment has gained us fundamental understanding in the form of a microscopic theory of superconduc tivity. Moreover, superconductivity has been transformed from a laboratory curiosity to the basis of some of the most sensitive and accurate measuring devices known, a whole host of other elec tronic devices, a soon-to-be new international standard for the volt, a prototype generation of superconducting motors and gener ators, and magnets producing the highest continuous magnetic fields yet produced by man. The promise of more efficient means of power transmission and mass transportation, a new generation of superconducting motors and generators, and computers and other electronic devices with superconducting circuit elements is all too clear. The realization of controlled thermonuclear fusion is perhaps totally dependent upon the creation of enormous magnetic fields over large volumes by some future generation of supercon ducting magnets. Nevertheless, whether or not the technological promise of superconductivity comes to full flower depends as much, and perhaps more, upon economic and political factors as it does upon new technological and scientific breakthroughs. The basic science of superconductivity and its technological implications were the subject of a short course on "The Science and Technology of Superconductivity" held at Georgetown University, Washington, D. C., during 13-26 August 1971."

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials, andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables, space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junction

Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers.

Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been discovered and developed, and our knowledge of the physical and other properties of oxide superconductors has deepened through extensive and intensive research. This knowledge has advanced superconductivity science and technology from the initial questioning stage to a more developed but still uncertain second stage where research activity in superconductivity now overlaps with fields of application. Generally speaking, science resonates with technology. Science not only complements but also competes with or stimulates technology. New scientific knowledge has triggered the second technological research stage. Much progress has been made in the development of practical devices, encouraging the application of superconductors in areas such as human levitation, a high speed levitated bearing, large current transforming leads, and high frequency devices. This technological progress has increased our understanding of the science involved, such as flux pinning and dynamics, and anomalous long-range superconducting interactions. At this important stage, international cooperation and collaborative projects can effectively sustain aggressive research and development in order to advance superconductivity to the next stages. The ISS Symposium is expected to serve as a venue for increasing our knowledge of superconductivity and for exchanging visions for future research and applications, through the presentation and discus of the latest research results. These proceedings also aim to summarize sion annual progress in high-Tc superconductivity in all fields."

While basic features of polarons were well recognized a long time ago and have been described in a number of review papers and textbooks, interest in the role of electron-phonon interactions and polaron dynamics in di?- ent materials has recently gone through a vigorous revival. Electron-phonon interactions have been shown to be relevant in many inorganic and organic semiconductors and polymers, colossal magnetoresistance oxides, and tra- port through nanowires and quantum dots also often depends on vibronic displacements of ions. These interactions presumably play a role in hi- temperature superconductors as well. The continued interest in polarons extends beyond the physical description of advanced materials. The ?eld has been a testing ground for analytical, semi-analytical, and numerical techniques, such as path integrals, strong-coupling perturbation expansion, advanced variational methods, exact diagonalization, Quantum Monte Carlo, and other techniques. This book reviews some recent developments in the ?eld of polarons, starting with the basics and covering a number of active directions of research. Single- and multipolaron theories have o?ered more insight into colossal magnetoresistance and in a broad spectrum of ph- ical properties of structures with reduced dimension and dimensionality such as transport, optical absorption, Raman scattering, photoluminescence, magneto-optics, etc. While nobody - at present - has a ?nal theory of hi- temperature superconductivity, we discuss one alternative (polaronic) route. We have bene?ted from discussions with many experts in the ?eld.

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph ous state. The two extremes of this range attract a large amount of inter est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984."

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

Inelastic Electron Tunneling Spectroscop or lETS, provides a unique technique for electronically monitoring the vibrational modes of molecul (;5 adsorbed on a metal oxide surface. Since the discovery of the phenomena by JAKLEVIC and LM1BE in 1966, lETS has been developed by a number of scientists as a method for studying the surface chemistry of molecular species adsorbed on aluminum oxide. Recent applications of lETS include investigations of physical and chemical adsorption of hydrocarbons, studies of catalysis by metal particles, detection and identification of trace substances in air and water, and studies of biological molecules and electron damage to such molecules. lETS has been employed to investigate adhesive materials, and studies are currently in prog ress to investigate corrosion species and corrosion inhibitors on aluminum and its alloys. Electronic transitions of molecules have also been studied by lETS. The recent development of the "external doping" technique, whereby molecu lar species can be introduced into fabricated tunnel junctions, opens the door for a vast new array of surface chemical studies by lETS. lETS is rap idly becoming an important tool for the study of surface and interface phe nomena. In addition to its role in surface studies, inelastic tunneling has proved extremely valuable for the study of the electronic properties of thin metallic films, and the recent discovery of light emission from inelastic tunneling promises to be of some importance in the area of device physics."

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

The occurrence of superconductivity among the d- and f-band metals remains one of the unsolved problems of physics. The first Rochester conference on this subject in October 1971 brought together approximately 100 experimentalists and theorists, and that conference was considered successful; the published proceedings well-represented the current research at that time and has served as a "handbook" to many. In the four and one half years since the first conference, impressive progress has been made in many areas (although Berndt Matthias would be one of the first to point out that raising the m"aximum transition temperature by a significant amount was not one of them). For a variety of reasons, I decided that it was time for a Second Rochester Conference on Superconductivity in d- and f-Band Metals and it was held on April 30 and May 1, 1976. It would appear that this conference was even more successful judging from the quality of the talks and various comments made to me. I believe that this was due to the fact that the subject matter is exciting and that the timing was particularly appropriate for several areas of research that were discussed. However, I cannot rule out other factors such as the one advanced humorously by J.

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers."

Quasicrystals are a new form of the solid state which differ from the other two known forms, crystalline and amorphous, by possesing a new type of long-range translational order, called quasiperiodicty, and a noncrystallographic orientational order. This book provides an up-to-date description of the unusual physical properties of these new materials. Emphasis is placed on the experimental results, which are compared with those of the corresponding crystalline and amorphous systems and discussed in terms of modern theoretical models. Written by leading authorities in the field, the book will be of great use both to experienced workers in the field and to uninitiated graduate students.

The Novel Mechanisms of Superconductivity Conference was initially conceived in the early part of 1986 as a small, 2-1/2 day workshop of 40-70 scientists, both theorists and experimentalists interested in exploring the possible evidence for exotic, non phononic superconductivity. Of course, the historic discoveries of high temperature oxide superconductors by Bednorz and Mftller and the subsequent enhancements by the Houston/Alabama groups made such a small conference impractical. The conference necessarily had to expand, 2-1/2 days became 4-1/2 days and superconductivity in the high Tc oxides became the largest single topic in the workshop. In fact, this conference became the first major conference on this topic and thus, these proceedings are also the first maj or publication. However, heavy fermion, organic and low carrier concentration superconductors remained a very important part of this workshop and articles by the leaders in these fields are included in these proceedings. Ultimately the workshop hosted rearly 400 scientists, students and media including representatives from the maj or research groups in the U.S., Europe, Japan and the Soviet Union.

The International Winter School on Electronic Properties of High-Temperature Superconductors, held between March 7-14, 1992, in Kirchberg, (Tyrol) Austria, was the sixth in a series of meetings to be held at this venue. Four of the earlier meetings were dedicated to issues in the field of conducting polymers, while the winter school held in 1990 was devoted to the new discipline of high-T c superconductivity. This year's meeting constituted a forum not only for the large number of scientists engaged in high-Tc research, but also for those involved in the new and exciting field of fullerenes. Many of the issues raised during the earlier winter schools on conducting polymers, and the last one on high-T c superconductivity, have taken on a new significance in the light of the discovery of superconducting C materials. 60 The Kirchberg meetings are organized in the style of a school where expe rienced scientists from universities, research laboratories and industry have the opportunity to discuss their most recent results, and where students and young scientists can learn about the present status of research and applications from some of the most eminent workers in their field. In common with the previous winter school on high-Tc superconductors, the of the cuprate superconductors. present one focused on the electronic properties In addition, consideration was given to related compounds which are relevant to the understanding of the electronic structure of the cuprates in the normal state, to other oxide superconductors and to fulleride superconductors.

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)