Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

Superconductors is neither about basic aspects of superconductivity nor about its applications, but its mainstay is superconducting materials. Unusual and unconventional features of a large variety of novel superconductors are presented and their technological potential as practical superconductors assessed. The book begins with an introduction to basic aspects of superconductivity. The presentation is readily accessible to readers from a diverse range of scientific and technical disciplines, such as metallurgy, materials science, materials engineering, electronic and device engineering, and chemistry. The derivation of mathematical formulas and equations has been kept to a minimum and, wherever necessary, short appendices with essential mathematics have been added at the end of the text. The book is not meant to serve as an encyclopaedia, describing each and every superconductor that exists, but focuses on important milestones in their exciting development.

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Oxide materials have been used in mainstream semiconductor technology for several decades and have served as important components, such as gate insulators or capacitors, in integrated circuits. However, in recent decades, this material class has emerged in its own right as a potential contender for alternative technologies, generally designated as 'beyond Moore'. The 2004 discovery by Ohtomo and Hwang was a global trendsetter in this context. It involved observing a two-dimensional, high-mobility electron gas at the heterointerface between two insulating oxides, LaAlO3 and SrTiO3, supported by the rise of nascent deposition and growth-monitoring techniques, which was an important direction in materials science research. The quest to understand the origin of this unparalleled physical property and to find other emergent properties has been an active field of research in condensed matter that has united researchers with expertise in diverse fields such as thin-film growth, defect control, advanced microscopy, semiconductor technology, computation, magnetism and electricity, spintronics, nanoscience, and nanotechnology.

For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated. The book is divided into 4 parts: Part I on Semiconductor Physics; Part II on the principles of operation and modeling of the fundamental junctions and transistors; Part III on the diode, MOSFET and BJT topics needed for circuit design, and Part IV on photonic devices, microwave FETs, negative-resistance diodes, and power devices. Within each part, material is presented hierarchically, with core topics first, followed by advanced topics.

The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, becomes questionable. Further questions relate to two-dimensional transport in the most important field-effect devices and one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design.
The text is divided into three parts: Part I explains semiconductor physics; Part II presents the principles of operation and modeling of the fundamental junctions and transistors; and Part III provides supplementary topics, including a dedicated chapter on the physics of nanoscale devices, description of the SPICE models and equivalent circuits that are needed for circuit design, introductions to the most important specific devices (photonic devices, JFETs and MESFETs, negative-resistance diodes, and power devices), and an overview of integrated-circuit technologies. The chapters and the sections in each chapter are organized so as to enable instructors to select more rigorous and design-related topics as they see fit.

"This book focuses on the exciting topic on self-organized organic semiconductors - from materials to device applications. It offers up-to-date and accessible coverage of self-organized semiconductors for organic chemistry, polymer science, liquid crystals, materials science, material engineering, electrical engineering, chemical engineering, optics, optic-electronics, nanotechnology and semiconductors. Chapters cover chemistry, physics, processing, and characterization. The applications include photovoltaics, light-emitting diodes (LEDs), and transistors"--

Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including original theoretical and experimental work. It also explains how these investigations have translated into applications and products. Written by experts in the field, the chapters review cutting-edge progress on semiconductor and nanomaterial-based sensors. An excellent introduction to the subject, this book is also an outstanding reference for those working on different sensor applications. It addresses various subfields, including: GaN-based sensor arrays for quick and reliable medical testing Optical sensors Wireless remote hydrogen sensing systems MOS-based, thin-film, and nanowire-based sensors The wide-bandgap semiconductor sensors discussed in this book offer many advantages as replacements for silicon-based sensors, including their high chemical resistance, high-temperature operation, and blue and ultraviolet optoelectronic behaviors. Although assays exist for biomedical detection, they are limited by various factors. Nanomaterial devices, such as the sensors examined in this book, are currently the best option for moving toward fast, label-free, sensitive, and selective multiple-detection systems for biological and medical sensing applications. Providing sufficient background information and technical detail, this is an excellent resource for advanced level undergraduate and graduate students as well as researchers in gas, chemical, biological, and medical sensors.

Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance.

This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion.

This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases ingate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits

"Tradeoffs and Optimization in Analog CMOS Design" is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

This new edition specifically addresses the most recent and relevant developments in the design and manufacture of OLED displays * Provides knowledge of OLED fundamentals and related technologies for applications such as displays and solid state lighting along with processing and manufacturing technologies * Serves as a reference for people engaged in OLED research, manufacturing, applications and marketing * Includes coverage of white + color filter technology, which has become industry standard technology for large televisions

This modern text provides detailed coverage of the important physical processes underpinning semiconductor devices. Advanced analysis of the optical properties of semiconductors without the requirement of complex mathematical formalism allows clear physical interpretation of all obtained results. The book describes fundamental aspects of solid-state physics and the quantum mechanics of electron-photon interactions, in addition to discussing in detail the photonic properties of bulk and quantum well semiconductors. The final six chapters focus on the physical properties of several widely-used photonic devices, including distributed feedback lasers, vertical-cavity surface-emitting lasers, quantum dot lasers, and quantum cascade lasers. This book is ideal for graduate students in physics and electrical engineering and a useful reference for optical scientists.

This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

This book presents the high-precision analysis of ground states and low-energy excitations in fractional quantum Hall states formed by Dirac electrons, which have attracted a great deal of attention. In particular the author focuses on the physics of fractional quantum Hall states in graphene on a hexagonal boron nitride substrate, which was recently implemented in experiments. The numerical approach employed in the book, which uses an exact numerical diagonalization of an effective model Hamiltonian on a Haldane's sphere based on pseudopotential representation of electron interaction, provides a better understanding of the recent experiments. The book reviews various aspects of quantum Hall effect: a brief history, recent experiments with graphene, and fundamental theories on integer and fractional Hall effects. It allows readers to quickly grasp the physics of quantum Hall states of Dirac fermions, and to catch up on latest research on the quantum Hall effect in graphene.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics.

This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.

This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption. 2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

This thesis contains three breakthrough results in condensed matter physics. Firstly, broken reflection symmetry in the hidden-order phase of the heavy-fermion material URu2Si2 is observed for the first time. This represents a significant advance in the understanding of this enigmatic material which has long intrigued the condensed matter community due to its emergent long range order exhibited at low temperatures (the so-called "hidden order"). Secondly and thirdly, a novel collective mode (the chiral spin wave) and a novel composite particle (the chiral exciton) are discovered in the three dimensional topological insulator Bi2Se3. This opens up new avenues of possibility for the use of topological insulators in photonic, optoelectronic, and spintronic devices. These discoveries are facilitated by using low-temperature polarized Raman spectroscopy as a tool for identifying optically excited collective modes in strongly correlated electron systems and three-dimensional topological insulators.

The thesis gives the first experimental demonstration of a new quantum bit ("qubit") that fuses two promising physical implementations for the storage and manipulation of quantum information - the electromagnetic modes of superconducting circuits, and the spins of electrons trapped in semiconductor quantum dots - and has the potential to inherit beneficial aspects of both. This new qubit consists of the spin of an individual superconducting quasiparticle trapped in a Josephson junction made from a semiconductor nanowire. Due to spin-orbit coupling in the nanowire, the supercurrent flowing through the nanowire depends on the quasiparticle spin state. This thesis shows how to harness this spin-dependent supercurrent to achieve both spin detection and coherent spin manipulation. This thesis also represents a significant advancement to our understanding and control of Andreev levels and thus of superconductivity. Andreev levels, microscopic fermionic modes that exist in all Josephson junctions, are the microscopic origin of the famous Josephson effect, and are also the parent states of Majorana modes in the nanowire junctions investigated in this thesis. The results in this thesis are therefore crucial for the development of Majorana-based topological information processing.

What are the physical mechanisms that underlie the efficient generation and transfer of energy at the nanoscale? Nature seems to know the answer to this question, having optimised the process of photosynthesis in plants over millions of years of evolution. It is conceivable that humans could mimic this process using synthetic materials, and organic semiconductors have attracted a lot of attention in this respect. Once an organic semiconductor absorbs light, bound pairs of electrons with positively charged holes, termed `excitons', are formed. Excitons behave as fundamental energy carriers, hence understanding the physics behind their efficient generation and transfer is critical to realising the potential of organic semiconductors for light-harvesting and other applications, such as LEDs and transistors. However, this problem is extremely challenging since excitons can interact very strongly with photons. Moreover, simultaneously with the exciton motion, organic molecules can vibrate in hundreds of possible ways, having a very strong effect on energy transfer. The description of these complex phenomena is often beyond the reach of standard quantum mechanical methods which rely on the assumption of weak interactions between excitons, photons and vibrations. In this thesis, Antonios Alvertis addresses this problem through the development and application of a variety of different theoretical methods to the description of these strong interactions, providing pedagogical explanations of the underlying physics. A comprehensive introduction to organic semiconductors is followed by a review of the background theory that is employed to approach the relevant research questions, and the theoretical results are presented in close connection with experiment, yielding valuable insights for experimentalists and theoreticians alike.

This thesis addresses the problem of improving the alignment of carbon nanotubes (CNTs) in transistor applications, taking a unique approach using iptycenes acting as molecular tweezers in combination with a liquid crystal solvent. As part of a project to test the effectiveness of a multi-step method, the so-called Alignment Relay Technique (ART), this work contributed evidence for the selectivity and stability of ART, as well as providing the first proof-of-concept that ART can be used to create CNT field-effect transistors (FETs). The thesis effectively explains and illustrates the chemical synthesis of the tweezers, the concept and actualization of the technique, the various factors observed to influence deposition and selectivity, along with material fabrication using both photolithography and electron beam lithography. This research advances knowledge of transistors and expands the applications of small organic molecules in the field of materials science. Particular highlights of this thesis include: an extensive review of ART, its advantages, and limitations; development of new material chemistry methods for the optimization of semiconducting CNT selectivity; and a comprehensive exploration of fabrication and characterization of CNTFETs for future applications.