This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices. Three outstanding results are reported: (1) LaNiO3-LaAlO3 superlattices with fewer than three consecutive NiO2 layers exhibit a novel spiral spin density wave, whereas superlattices with thicker nickel-oxide layer stacks remain paramagnetic. The magnetic transition is thus determined by the dimensionality of the electron system. The polarization plane of the spin density wave can be tuned by epitaxial strain and spatial confinement of the conduction electrons. (2) Further experiments on the same system revealed an unusual structural phase transition controlled by the overall thickness of the superlattices. The transition between uniform and twin-domain states is confined to the nickelate layers and leaves the aluminate layers unaffected. (3) Superlattices based on the high-temperature superconductor YBa2Cu3O7 exhibit an incommensurate charge density wave order that is stabilized by heterointerfaces. These results suggest that interfaces can serve as a powerful tool to manipulate the interplay between spin order, charge order, and superconductivity in cuprates and other transition metal oxides.

How much knowledge can we gain about a physical system and to what degree can we control it? In quantum optical systems, such as ion traps or neutral atoms in cavities, single particles and their correlations can now be probed in a way that is fundamentally limited only by the laws of quantum mechanics. In contrast, quantum many-body systems pose entirely new challenges due to the enormous number of microscopic parameters and their small length- and short time-scales. This thesis describes a new approach to probing quantum many-body systems at the level of individual particles: Using high-resolution, single-particle-resolved imaging and manipulation of strongly correlated atoms, single atoms can be detected and manipulated due to the large length and time-scales and the precise control of internal degrees of freedom. Such techniques lay stepping stones for the experimental exploration of new quantum many-body phenomena and applications thereof, such as quantum simulation and quantum information, through the design of systems at the microscopic scale and the measurement of previously inaccessible observables.

Warm Dense Matter (WDM) occupies a loosely defined region of phase space intermediate between solid, liquid, gas, and plasma, and typically shares characteristics of two or more of these phases. WDM is generally associated with the combination of strongly coupled ions and moderately degenerate electrons, and careful attention to quantum physics and electronic structure is essential. The lack of a small perturbation parameter greatly limits approximate attempts at its accurate description. Since WDM resides at the intersection of solid state and high energy density physics, many high energy density physics (HEDP) experiments pass through this difficult region of phase space. Thus, understanding and modeling WDM is key to the success of experiments on diverse facilities. These include the National Ignition Campaign centered on the National Ignition Facility (NIF), pulsed-power driven experiments on the Z machine, ion-beam-driven WDM experiments on the NDCX-II, and fundamental WDM research at the Linear Coherent Light Source (LCLS). Warm Dense Matter is also ubiquitous in planetary science and astrophysics, particularly with respect to unresolved questions concerning the structure and age of the gas giants, the nature of exosolar planets, and the cosmochronology of white dwarf stars. In this book we explore established and promising approaches to the modeling of WDM, foundational issues concerning the correct theoretical description of WDM, and the challenging practical issues of numerically modeling strongly coupled systems with many degrees of freedom.

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.

The series Advances in Polymer Science presents critical reviews of the present and future trends in polymer and biopolymer science. It covers all areas of research in polymer and biopolymer science including chemistry, physical chemistry, physics, material science. The thematic volumes are addressed to scientists, whether at universities or in industry, who wish to keep abreast of the important advances in the covered topics. Advances in Polymer Science enjoys a longstanding tradition and good reputation in its community. Each volume is dedicated to a current topic, and each review critically surveys one aspect of that topic, to place it within the context of the volume. The volumes typically summarize the significant developments of the last 5 to 10 years and discuss them critically, presenting selected examples, explaining and illustrating the important principles, and bringing together many important references of primary literature. On that basis, future research directions in the area can be discussed. Advances in Polymer Science volumes thus are important references for every polymer scientist, as well as for other scientists interested in polymer science - as an introduction to a neighboring field, or as a compilation of detailed information for the specialist. Review articles for the individual volumes are invited by the volume editors. Single contributions can be specially commissioned. Readership: Polymer scientists, or scientists in related fields interested in polymer and biopolymer science, at universities or in industry, graduate students

As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content: Low-dimensional semiconductor structures Magnetism in solids Diluted magnetic semiconductors Magnetic electrodes Spin injection Spin transistor Spin interference Spin Hall effect Quantum spin Hall effect Topological insulators Quantum computation with electron spins

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.

CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.

This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field. Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been improved for 20 years, and no new superconductors have been discovered for 5 years. This book will encourage researchers as well as graduate-course students not to give up on the challenges in the future of high- Tc superconductivity.

This book provides an overview of the techniques and tools of nanostructure fabrication from state-of-the-art lithography to emerging self-assembly approaches. Top-down and bottom-up methodologies along with hybrid approaches are used to illustrate the fabrication of structures including integrated circuits, semiconductor quantum dots, metallic nanoparticles, carbon nanotubes, molecular structures, nanocomposites, arrays and superstructures. Nanofabrication applications in nanoelectronics, biotechnology, nanomechanical devices and nanophotonics will be examined. This brief will present the core concepts of nanofabrication relevant to researchers and industry in this important and rapidly evolving area.

This book deals with all aspects of plasmonics, basics, applications and advanced developments. Plasmonics is an emerging field of research dedicated to the resonant interaction of light with metals. The light/matter interaction is strongly enhanced at a nanometer scale which sparks a keen interest of a wide scientific community and offers promising applications in pharmacology, solar energy, nanocircuitry or also light sources. The major breakthroughs of this field of research originate from the recent advances in nanotechnology, imaging and numerical modelling. The book is divided into three main parts: extended surface plasmons polaritons propagating on metallic surfaces, surface plasmons localized on metallic particles, imaging and nanofabrication techniques. The reader will find in the book: Principles and recent advances of plasmonics, a complete description of the physics of surface plasmons, a historical survey with emphasize on the emblematic topic of Wood's anomaly, an overview of modern applications of molecular plasmonics and an extensive description of imaging and fabrications techniques.

This thesis combines highly accurate optical spectroscopy data on the recently discovered iron-based high-temperature superconductors with an incisive theoretical analysis. Three outstanding results are reported: (1) The superconductivity-induced modification of the far-infrared conductivity of an iron arsenide with minimal chemical disorder is quantitatively described by means of a strong-coupling theory for spin fluctuation mediated Cooper pairing. The formalism developed in this thesis also describes prior spectroscopic data on more disordered compounds. (2) The same materials exhibit a sharp superconductivity-induced anomaly for photon energies around 2.5 eV, two orders of magnitude larger than the superconducting energy gap. The author provides a qualitative interpretation of this unprecedented observation, which is based on the multiband nature of the superconducting state. (3) The thesis also develops a comprehensive description of a superconducting, yet optically transparent iron chalcogenide compound. The author shows that this highly unusual behavior can be explained as a result of the nanoscopic coexistence of insulating and superconducting phases, and he uses a combination of two complementary experimental methods - scanning near-field optical microscopy and low-energy muon spin rotation - to directly image the phase coexistence and quantitatively determine the phase composition. These data have important implications for the interpretation of data from other experimental probes.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between "More Moore" and "More than Moore" are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

Kalia and Fu's novel monograph covers cryogenic treatment, properties and applications of cryo-treated polymer materials. Written by numerous international experts, the twelve chapters in this book offer the reader a comprehensive picture of the latest findings and developments, as well as an outlook on the field. Cryogenic technology has seen remarkable progress in the past few years and especially cryogenic properties of polymers are attracting attention through new breakthroughs in space, superconducting, magnetic and electronic techniques. This book is a valuable resource for researchers, educators, engineers and graduate students in the field and at technical institutions.

In conventional metals, various transport coefficients are scaled according to the quasiparticle relaxation time, \tau, which implies that the relaxation time approximation (RTA) holds well. However, such a simple scaling does not hold in many strongly correlated electron systems, reflecting their unique electronic states. The most famous example would be cuprate high-Tc superconductors (HTSCs), where almost all the transport coefficients exhibit a significant deviation from the RTA results. To better understand the origin of this discrepancy, we develop a method for calculating various transport coefficients beyond the RTA by employing field theoretical techniques. Near the magnetic quantum critical point, the current vertex correction (CVC), which describes the electron-electron scattering beyond the relaxation time approximation, gives rise to various anomalous transport phenomena. We explain anomalous transport phenomena in cuprate HTSCs and other metals near their magnetic or orbital quantum critical point using a uniform approach. We also discuss spin related transport phenomena in strongly correlated systems. In many d- and f-electron systems, the spin current induced by the spin Hall effect is considerably greater because of the orbital degrees of freedom. This fact attracts much attention due to its potential application in spintronics. We discuss various novel charge, spin and heat transport phenomena in strongly correlated metals.

The emphasis of this book is on practical design aspects for broadband A/D converters for communication systems. The embedded designs are employed for transceivers in the field of ADSL solutions and WLAN applications. An area- and power-efficient realization of a converter is mandatory to remain competitive in the market. The right choice for the converter topology and architecture needs to be done very carefully to result in a competitive FOM. The book begins with a brief overview of basic concepts about ADSL and WLAN to understand the ADC requirements. At architectural level, issues on different modulator topologies are discussed employing the provided technology node. The design issues are pointed out in detail for modern digital CMOS technologies, beginning with 180nm followed by 130nm and going down to 65nm feature size. Beside practical aspects, challenges to mixed-signal design level are addressed to optimize the converters in terms of consumed chip area, power consumption and design for high yield in volume production. Thus, careful considerations on circuit- and architectural- level are performed by introducing a dynamic-biasing technique, a feed-forward approach and a resolution in time instead of amplitude resolution.

This book deals with modeling and implementation of high performance, current-steering D/A-converters for digital transceivers in nanometer CMOS technology. In the first part, the fundamental performance limitations of current-steering DACs are discussed. Based on simplified models, closed-form expressions for a number of basic non-ideal effects are derived and tested. With the knowledge of basic performance limits, the converter and system architecture can be optimized in an early design phase, trading off circuit complexity, silicon area and power dissipation for static and dynamic performance. The second part describes four different current-steering DAC designs in standard 130 nm CMOS. The converters have a resolution in the range of 12-14 bits for an analog bandwidth between 2.2 MHz and 50 MHz and sampling rates from 100 MHz to 350 MHz. Dynamic-Element-Matching (DEM) and advanced dynamic current calibration techniques are employed to minimize the required silicon area.

Three dimensional (3D) optical geometries are becoming more common in the literature and lexicon of solar cells. Three Dimensional Solar Cells Based on Optical Confinement Geometries describes and reveals the basic operational nuances of 3D photovoltaics using three standard tools: Equivalent Circuit Models, Ray Tracing Optics in the Cavity, and Absorber Spectral Response. These tools aide in understanding experimental absorption profile and device parameters including Jsc, Voc, Fill Factor, and EQE. These methods also apply to individual optical confinement geometry device, integrated optical confinement geometry device, and hybrid optical confinement geometry device. Additionally, this book discusses the importance of these methods in achieving the goal of high efficiency solar cells and suggests a possible application in large-scale photovoltaics business, like solar farms.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

The field of semiconductor nanostructures is of enormous and still-growing research interest. On one hand, they are already realized in mass products such as high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties such as many-particle interactions of electrons in reduced dimensions. This book bridges the gap between general semiconductor textbooks and research articles.

This third edition of "Semiconductor Lasers, Stability, Instability and Chaos" was significantly extended. In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One of the new topics in this edition is fast physical number generation using chaotic semiconductor lasers for secure communication and development of chaos chips and their application. As other new important topics, the recent advance of new semiconductor laser structures is presented, such as quantum-dot semiconductor lasers, quantum-cascade semiconductor lasers, vertical-cavity surface-emitting lasers and physical random number generation with application to quantum key distribution. Stabilities, instabilities, and control of quantum-dot semiconductor lasers and quantum-cascade lasers are important topics in this field.