The expansion of the application of ferroelectric crystals in engineering as well as of a number of fundamental problems of solid-state physics, which have not yet been solved and which bear a direct relation to ferro electricity, has lately stimulated much interest in the problem of ferroelectricity. In courses of solid-state physics ferroelectricity is studied today along with traditional disciplines, such as magnetism, superconductivity, and 'semiconducting phe nomena. Moreover, new specialities have been born concerned directly with the development and utilization of ferroelectric material in optics, acous tics, computer technology, and capacitor engineering. Special courses in the physics of ferroelectrics are read in a number of colleges and universities. The study of the nature of ferro electricity has currently reached such a level of development that we may speak of having gained a rather deep insight into the physical essence of a number of phenomena, which contribute to the generation of a spontaneous electric polarization in crystals. It is exactly at this level that it has become possible to single out that part of the problem, the physical picture of which can be depicted in a rather unsophisticated manner and which is the foundation for the construction of a building of "complete understanding.""

In less than two decades the concept of supercon In every field of science there are one or two ductivity has been transformed from a laboratory individuals whose dedication, combined with an innate curiosity to usable large-scale applications. In the understanding, permits them to be able to grasp, late 1960's the concept of filamentary stabilization condense, and explain to the rest of us what that released the usefulness of zero resistance into the field is all about. For the field of titanium alloy marketplace, and the economic forces that drive tech superconductivity, such an individual is Ted Collings. nology soon focused on niobium-titanium alloys. They His background as a metallurgist has perhaps given him are ductile and thus fabricable into practical super a distinct advantage in understanding superconduc conducting wires that have the critical currents and tivity in titanium alloys because the optimization of fields necessary for large-scale devices. More than superconducting parameters in these alloys has been 90% of all present-day applications of superconductors almost exclusively metallurgical. Advantages in use titanium alloys. The drive to optimize these training and innate abilities notwithstanding, it is alloys resulted in a flood of research that has been the author's dedication that is the essential com collected, condensed, and analyzed in this volume."

This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

Recent experimental and theoretical progress has elucidated the tunable crossover, in ultracold Fermi gases, from BCS-type superconductors to BEC-type superfluids.

"The BCS-BEC Crossover and the Unitary Fermi Gas" is a collaborative effort by leading international experts to provide an up-to-date introduction and a comprehensive overview of current research in this fast-moving field.

It is now understood that the unitary regime that lies right in the middle of the crossover has remarkable universal properties, arising from scale invariance, and has connections with fields as diverse as nuclear physics and string theory.

This volume will serve as a first point of reference for active researchers in the field, and will benefit the many non-specialists and graduate students who require a self-contained, approachable exposition of the subject matter.

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Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. "Quantum Dot Devices" is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source."

Various experimental techniques for point contact production are described. Examples of point-contact spectra are presented for pure metals, alloys and compounds, as well as for semimetals and semiconductors, heavy fermion systems, Kond-lattices, mixed valence compounds and more. Superconducting point contacts are considered in respect to Andreev reflection and Josephson effects. Special attention is paid to contact conductance fluctuation, and new trends of research are outlined.

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

This volume contains the proceedings of the ffiM Japan International Sympo sium on Strong Correlation and Superconductivity, which was held in Keidan ren Guest House at the foot of Mt. Fuji, May 21-25, 1989. The purpose of the Symposium was to provide an opportunity for discus sions on the problem of strong correlation of electrons in the context of high-Tc superconductivity. Sixty-eight scientists were invited from seven countries and forty-three papers were presented in the Symposium. Soon after the discovery ofhigh-Tc superconducting oxides, Professor P. W. Anderson proposed that the essence of high-Tc superconductivity lies in the strong correlation among the electrons in these materials. This proposal has stimulated a wide range of theoretical investigations on this profound and dif ficult problem, which are expected to lead eventually to new concepts describ ing strong electron correlation. In the Symposium, Anderson himself started lively discussions by his talk entitled "Myth and Reality in High-Tc Supercon ductivity," which was followed by various reports on theoretical studies and experimental results. Concise and thoughtful summaries of experiment and theory were given by Professors H. R. Ott and P. A. Lee, respectively. It is our hope that this volume reflects the present status of the research activity on this outstanding problem from the viewpoint of the basic physics and that it will further stimulate the effort to understand these fascinating systems, the high-Tc oxides."

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology."

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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During a century, from the Van der Waals mean field description (1874) of gases to the introduction of renormalization group (RG techniques 1970), thermodynamics and statistical physics were just unable to account for the incredible universality which was observed in numerous critical phenomena. The great success of RG techniques is not only to solve perfectly this challenge of critical behaviour in thermal transitions but to introduce extremely useful tools in a wide field of daily situations where a system exhibits scale invariance. The introduction of scaling, scale invariance and universality concepts has been a significant turn in modern physics and more generally in natural sciences. Since then, a new "physics of scaling laws and critical exponents", rooted in scaling approaches, allows quantitative descriptions of numerous phenomena, ranging from phase transitions to earthquakes, polymer conformations, heartbeat rhythm, diffusion, interface growth and roughening, DNA sequence, dynamical systems, chaos and turbulence. The chapters are jointly written by an experimentalist and a theorist. This book aims at a pedagogical overview, offering to the students and researchers a thorough conceptual background and a simple account of a wide range of applications. It presents a complete tour of both the formal advances and experimental results associated with the notion of scaling, in physics, chemistry and biology.

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions.

Lead-free solders are used extensively as interconnection materials in electronic assemblies and play a critical role in the global semiconductor packaging and electronics manufacturing industry. Electronic products such as smart phones, notebooks and high performance computers rely on lead-free solder joints to connect IC chip components to printed circuit boards." Lead Free Solder: Mechanics and Reliability" provides in-depth design knowledge on lead-free solder elastic-plastic-creep and strain-rate dependent deformation behavior and its application in failure assessment of solder joint reliability. It includes coverage of advanced mechanics of materials theory and experiments, mechanical properties of solder and solder joint specimens, constitutive models for solder deformation behavior; numerical modeling and simulation of solder joint failure subject to thermal cycling, mechanical bending fatigue, vibration fatigue and board-level drop impact tests.

This book should fill a gap which has existed in the literature on supercon ductivity. There have been a number of excellent textbooks available on the phenomenon of superconductivity, which describe in detail the variety of ef fects connected with it and the mathematical techniques to deal with them properly. However, until now there has not been a textbook available in English which concentrates on the mate ial aspects of superconductivity. This is a major shortcoming since most physicists working in the field of superconduc tivity are mainly concerned with specific materials and subsequently often need to know more about the interplay of superconductivity and material prop erties. On the other hand, people working in the field know that a competent and well-written book by S. V. Vonsovsky, V. A. Izyumov, and E. Z. Kurmaev has been available in Russian. It presents a thorough discussion of superconducting transition-metal alloys and compounds. This volume is a translation of an updated version of the Russian edition. The translation was done by A. P. Zavarnitsyn of the authors' institution and by Dr. E. H. Brandt of the Max-Planck-Institut fur Metallforschung in Stuttgart. The master manuscript was ably typed by Mrs. C. Pendl. I would like to take this opportunity to thank each of them. I sincerely hope that the book will turn out to be useful to physicists working in the field of superconductivity as well as to nonspecialists and interested graduate students."

The study of the spontaneous formation of nanostructures in single crystals of several compounds is now a major area of research in strongly correlated electrons. These structures appear to originate in the competition of phases. The book addresses nanoscale phase separation, focusing on the manganese oxides known as manganites that have the colossal magnetoresistance (CMR) effect of potential relevance for device applications. It is argued that the nanostructures are at the heart of the CMR phenomenon. The book contains updated information on manganite research directed to experts, both theorists and experimentalists. However, graduate students or postdocs will find considerable introductory material, including elements of computational physics.

A collection of articles on different approaches to the investigation of surface effects on nanosized magnetic materials, with special emphasis on magnetic nanoparticles. The book provides an overview of progress in the field through recent results.

This thesis details the significant progress made in improving the performance of organic transistors and the network conductivity of carbon nanotubes. The first section investigates organic semiconductor nucleation and growth on the most common dielectric surface used to fabricate organic thin film transistors. The nucleation and growth of the semiconductor was determined to be a critical factor affecting the device performance. Excellent dielectric modification layers, which promote desirable semiconductor growth leading to high conductivity were identified, and a technologically relevant deposition technique was developed to fabricate high quality dielectric modification layers over large areas. This may represent an important step towards the realization of large area organic circuity. In the final section, lessons learned from studying organic semiconductor nucleation and growth were utilized to improve the conductivity of carbon nanotube networks. Selective nucleation of materials at the junctions between nanotubes in the network significantly decreased the network's sheet resistance. The resulting networks may be promising candidates for transparent electrodes with a variety of optoelectronic applications.

Technology computer-aided design, or TCAD, is critical to today's semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

This invaluable book provides a comprehensive treatment of design and applications of semiconductor optical amplifiers (SOA). SOA is an important component for optical communication systems. It has applications as in-line amplifiers and as functional devices in evolving optical networks. The functional applications of SOAs were first studied in the early 1990's, since then the diversity and scope of such applications have been steadily growing. This is the second edition of a book on Semiconductor Optical Amplifiers first published in 2006 by the same authors. Several chapters and sections representing new developments in the chapters of the first edition have been added. The new chapters cover quantum dot semiconductor optical amplifiers (QD-SOA), reflective semiconductor optical amplifiers (RSOA) for passive optical network applications, two-photon absorption in amplifiers, and, applications of SOA as broadband sources. They represent advances in research, technology and commercial trends in the area of semiconductor optical amplifiers.Semiconductor Optical Amplifier is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of optical amplifiers. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

This text presents an overview of the electronic transport phenomena including high-Tc superconductivity and colossal magnetoresistance. It concisely reviews all the conducting oxides, discussing in detail nine representative oxides. More than 1200 references serve as a convenient guidepost to proceed into this vast research field.