Aimed at electronics industry professionals, this 4th edition of the Boundary Scan Handbook describes recent changes to the IEEE1149.1 Standard Test Access Port and Boundary-Scan Architecture. This updated edition features new chapters on the possible effects of the changes on the work of the practicing test engineers and the new 1149.8.1 standard. Anyone needing to understand the basics of boundary scan and its practical industrial implementation will need this book. Provides an overview of the recent changes to the 1149.1 standard and the effect of the changes on the work of test engineers; Explains the new IEEE 1149.8.1 subsidiary standard and applications; Describes the latest updates on the supplementary IEEE testing standards. In particular, addresses: IEEE Std 1149.1 Digital Boundary-ScanIEEE Std 1149.4 Analog Boundary-ScanIEEE Std 1149.6 Advanced I/O TestingIEEE Std 1149.8.1 Passive Component TestingIEEE Std 1149.1-2013 The 2013 Revision of 1149.1IEEE Std 1532 In-System ConfigurationIEEE Std 1149.6-2015 The 2015 Revision of 1149.6

This handbook is a compendium giving a comprehensive description of the basics of semiconductor physics relevant to the design and analysis of thin film solar cell materials. It starts from the basics of material science, describing the material and its growth, defect and electrical properties, the basics of its interaction with photons and the involved statistics, proceeding to space charge effects in semiconductors and pn-junctions. Most attention is given to analyze homo- and hetero-junction solar cells using various models and applying the field-of-direction analysis for discussing current voltage characteristics, and helping to discover the involvement of high-field effects in solar cells. The comprehensive coverage of the main topics of - and relating to - solar cells with extensive reference to literature helps scientists and engineers at all levels to reach a better understanding and improvement of solar cell properties and their production. The author is one of the founders of thin film solar cell research.

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices. Three outstanding results are reported: (1) LaNiO3-LaAlO3 superlattices with fewer than three consecutive NiO2 layers exhibit a novel spiral spin density wave, whereas superlattices with thicker nickel-oxide layer stacks remain paramagnetic. The magnetic transition is thus determined by the dimensionality of the electron system. The polarization plane of the spin density wave can be tuned by epitaxial strain and spatial confinement of the conduction electrons. (2) Further experiments on the same system revealed an unusual structural phase transition controlled by the overall thickness of the superlattices. The transition between uniform and twin-domain states is confined to the nickelate layers and leaves the aluminate layers unaffected. (3) Superlattices based on the high-temperature superconductor YBa2Cu3O7 exhibit an incommensurate charge density wave order that is stabilized by heterointerfaces. These results suggest that interfaces can serve as a powerful tool to manipulate the interplay between spin order, charge order, and superconductivity in cuprates and other transition metal oxides.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

This book is expected to present state-of-the-art understanding of a selection of excitonic and photonic processes in useful materials from semiconductors to insulators to metal/insulator nanocomposites, both inorganic and organic. Among the featured applications are components of solar cells, detectors, light-emitting devices, scintillators and materials with novel optical properties. Excitonic properties are particularly important in organic photovoltaics and light emitting devices, as also in questions of the ultimate resolution and efficiency of new-generation scintillators for medical diagnostics, border security and nuclear non proliferation. Novel photonic and optoelectronic applications benefit from new material combinations and structures to be discussed.

How much knowledge can we gain about a physical system and to what degree can we control it? In quantum optical systems, such as ion traps or neutral atoms in cavities, single particles and their correlations can now be probed in a way that is fundamentally limited only by the laws of quantum mechanics. In contrast, quantum many-body systems pose entirely new challenges due to the enormous number of microscopic parameters and their small length- and short time-scales. This thesis describes a new approach to probing quantum many-body systems at the level of individual particles: Using high-resolution, single-particle-resolved imaging and manipulation of strongly correlated atoms, single atoms can be detected and manipulated due to the large length and time-scales and the precise control of internal degrees of freedom. Such techniques lay stepping stones for the experimental exploration of new quantum many-body phenomena and applications thereof, such as quantum simulation and quantum information, through the design of systems at the microscopic scale and the measurement of previously inaccessible observables.

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

This work describes theoretical and experimental advances towards the realization of a hybrid quantum processor in which the collective degrees of freedom of an ensemble of spins in a crystal are used as a multi-qubit register for superconducting qubits. A memory protocol made of write, read and reset operations is first presented, followed by the demonstration of building blocks of its implementation with NV center spins in diamond. Qubit states are written by resonant absorption of a microwave photon in the spin ensemble and read out of the memory on-demand by applying Hahn echo refocusing techniques to the spins. The reset step is implemented in between two successive write-read sequences using optical repumping of the spins.

This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.

The series Advances in Polymer Science presents critical reviews of the present and future trends in polymer and biopolymer science. It covers all areas of research in polymer and biopolymer science including chemistry, physical chemistry, physics, material science. The thematic volumes are addressed to scientists, whether at universities or in industry, who wish to keep abreast of the important advances in the covered topics. Advances in Polymer Science enjoys a longstanding tradition and good reputation in its community. Each volume is dedicated to a current topic, and each review critically surveys one aspect of that topic, to place it within the context of the volume. The volumes typically summarize the significant developments of the last 5 to 10 years and discuss them critically, presenting selected examples, explaining and illustrating the important principles, and bringing together many important references of primary literature. On that basis, future research directions in the area can be discussed. Advances in Polymer Science volumes thus are important references for every polymer scientist, as well as for other scientists interested in polymer science - as an introduction to a neighboring field, or as a compilation of detailed information for the specialist. Review articles for the individual volumes are invited by the volume editors. Single contributions can be specially commissioned. Readership: Polymer scientists, or scientists in related fields interested in polymer and biopolymer science, at universities or in industry, graduate students

As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content: Low-dimensional semiconductor structures Magnetism in solids Diluted magnetic semiconductors Magnetic electrodes Spin injection Spin transistor Spin interference Spin Hall effect Quantum spin Hall effect Topological insulators Quantum computation with electron spins

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.

This book presents an investigation of the anomalous and topological Hall effects in some itinerant ferromagnets and helimagnets by measurements of Hall effects driven by electrical or heat current. New clarifications are provided for spin-dependent Hall effects induced by the Berry phase, skew scattering, and scalar spin chirality. The author reveals the scattering-free nature of the Berry-phase-induced anomalous Hall current by conducting the first comparative study of electrical and thermal Hall effects. The impurity-element dependence of the anomalous Hall effect caused by skew scattering is systematically investigated in the low-resistivity region for Fe. Two new examples showing a topological Hall effect are found in helimagnets, in which nonzero scalar spin chirality arises from the modulation of spin structure through Dzyaloshinsky-Moriya (DM) interaction. Such a DM-interaction-mediated topological Hall effect is a new type of topological Hall effect. Also the temperature dependence of topological Hall terms in the thermal Hall effect and Nernst-Ettingshausen effect is found to be totally different from that in the electrical Hall effect. These results will be useful for applications of spin current to devices with low power consumption.

Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators. The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk--boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe). In each case the discussion of simple toy models is followed by the formulation of the general arguments regarding topological insulators. The only prerequisite for the reader is a working knowledge in quantum mechanics, the relevant solid state physics background is provided as part of this self-contained text, which is complemented by end-of-chapter problems.

This concise primer on photovoltaic solar energy conversion invites readers to reflect on the conversion of solar light into energy at the most fundamental level and encourages newcomers to the field to help find meaningful answers on how photovoltaic solar energy conversion can work (better), eventually contributing to its ongoing advancement. The book is based on lectures given to graduate students in the Physics Department at the University of Oldenburg over the last two decades, yet also provides an easy-to-follow introduction for doctoral and postdoctoral students from related disciplines such as the materials sciences and electrical engineering. Inspired by classic textbooks in the field, it reflects the author's own ideas on how to understand, visualize and eventually teach the microscopic physical mechanisms and effects, while keeping the text as concise as possible so as to introduce interested readers to the field and balancing essential knowledge with open questions.

Kalia and Fu's novel monograph covers cryogenic treatment, properties and applications of cryo-treated polymer materials. Written by numerous international experts, the twelve chapters in this book offer the reader a comprehensive picture of the latest findings and developments, as well as an outlook on the field. Cryogenic technology has seen remarkable progress in the past few years and especially cryogenic properties of polymers are attracting attention through new breakthroughs in space, superconducting, magnetic and electronic techniques. This book is a valuable resource for researchers, educators, engineers and graduate students in the field and at technical institutions.

This book deals with modeling and implementation of high performance, current-steering D/A-converters for digital transceivers in nanometer CMOS technology. In the first part, the fundamental performance limitations of current-steering DACs are discussed. Based on simplified models, closed-form expressions for a number of basic non-ideal effects are derived and tested. With the knowledge of basic performance limits, the converter and system architecture can be optimized in an early design phase, trading off circuit complexity, silicon area and power dissipation for static and dynamic performance. The second part describes four different current-steering DAC designs in standard 130 nm CMOS. The converters have a resolution in the range of 12-14 bits for an analog bandwidth between 2.2 MHz and 50 MHz and sampling rates from 100 MHz to 350 MHz. Dynamic-Element-Matching (DEM) and advanced dynamic current calibration techniques are employed to minimize the required silicon area.

The emphasis of this book is on practical design aspects for broadband A/D converters for communication systems. The embedded designs are employed for transceivers in the field of ADSL solutions and WLAN applications. An area- and power-efficient realization of a converter is mandatory to remain competitive in the market. The right choice for the converter topology and architecture needs to be done very carefully to result in a competitive FOM. The book begins with a brief overview of basic concepts about ADSL and WLAN to understand the ADC requirements. At architectural level, issues on different modulator topologies are discussed employing the provided technology node. The design issues are pointed out in detail for modern digital CMOS technologies, beginning with 180nm followed by 130nm and going down to 65nm feature size. Beside practical aspects, challenges to mixed-signal design level are addressed to optimize the converters in terms of consumed chip area, power consumption and design for high yield in volume production. Thus, careful considerations on circuit- and architectural- level are performed by introducing a dynamic-biasing technique, a feed-forward approach and a resolution in time instead of amplitude resolution.

This thesis describes a novel and robust way of deriving a Hamiltonian of the interacting boson model based on microscopic nuclear energy density functional theory. Based on the fact that the multi-nucleon induced surface deformation of finite nucleus can be simulated by effective boson degrees of freedom, observables in the intrinsic frame, obtained from self-consistent mean-field method with a microscopic energy density functional, are mapped onto the boson analog. Thereby, the excitation spectra and the transition rates for the relevant collective states having good symmetry quantum numbers are calculated by the subsequent diagonalization of the mapped boson Hamiltonian. Because the density functional approach gives an accurate global description of nuclear bulk properties, the interacting boson model is derived for various situations of nuclear shape phenomena, including those of the exotic nuclei investigated at rare-isotope beam facilities around the world. This work provides, for the first time, crucial pieces of information about how the interacting boson model is justified and derived from nucleon degrees of freedom in a comprehensive manner.

In conventional metals, various transport coefficients are scaled according to the quasiparticle relaxation time, \tau, which implies that the relaxation time approximation (RTA) holds well. However, such a simple scaling does not hold in many strongly correlated electron systems, reflecting their unique electronic states. The most famous example would be cuprate high-Tc superconductors (HTSCs), where almost all the transport coefficients exhibit a significant deviation from the RTA results. To better understand the origin of this discrepancy, we develop a method for calculating various transport coefficients beyond the RTA by employing field theoretical techniques. Near the magnetic quantum critical point, the current vertex correction (CVC), which describes the electron-electron scattering beyond the relaxation time approximation, gives rise to various anomalous transport phenomena. We explain anomalous transport phenomena in cuprate HTSCs and other metals near their magnetic or orbital quantum critical point using a uniform approach. We also discuss spin related transport phenomena in strongly correlated systems. In many d- and f-electron systems, the spin current induced by the spin Hall effect is considerably greater because of the orbital degrees of freedom. This fact attracts much attention due to its potential application in spintronics. We discuss various novel charge, spin and heat transport phenomena in strongly correlated metals.

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III-V semiconductor IC processing. The book's primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.