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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
"Semiconductor-On-Insulator Materials for NanoElectronics Applications" is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications" is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
This book gives a survey of the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. It focuses on the structural characterization of various carbon nanotubes, fabrication of vertically or parallel aligned carbon nanotubes on substrates or in composites, physical properties for their alignment, and applications of aligned carbon nanotubes in field emission, optical antennas, light transmission, solar cells, chemical devices, bio-devices, and many others. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications such as electrical interconnects, nanodiodes, optical antennas, and nanocoax solar cells, whereas current limitations and challenges are also be discussed to lay the foundation for future developments.
Phase separation has become a fascinating subject in the discussion of cuprate superconductors. All these materials have layered structures containing CU02 planes as the most important building blocks. They are coupled only weakly so that the electronic properties show a nearly two-dimensional behaviour. Due to correlations the undoped compounds are insulators of the Mott Hubbard type exhibiting long-range antiferromagnetic order. Upon doping a rich scenario of physical phenomena appears: Even at low hole concentra tions the antiferromagnetic ordering temperature is reduced drastically and spin-glass behaviour as well as a hopping type conductivity can be observed. Further doping leads to metallic-like conductivity and below Tc to super conductivity. In this doping regime antiferromagnetic fluctuations are still observed. At very high charge carrier densities superconductivity is lost and the systems show pure metallic conduction without ,magnetic correlations. One of the most interesting phenomena in high-T c research is the interplay between magnetism and conductivity or superconductivity. Especially the behaviour of charge carriers in the antiferromagnetic background raises a number of open questions. Two scenarios become possible: the carriers tend to delocalize over the whole crystal forming a homogeneous state with band-like structure or they separate into hole-rich (conducting, superconducting) and hole-poor (insulating, antiferromagnetic) phases leading to an inhomogeneous structure.
This volume contains a series of six lecture courses presented by some of the leading exponents in the field of low-temperature physics. Special emphasis is given to theoretical and experimental advances in our understanding of 3He, heavy fermion systems and high-Tc superconductivity. The book provide an ideal basis for graduate courses in low-temperature physics.
This book is addressed to all scientists interested in the use of high magnetic ?elds and in the use of high-?eld facilities around the world. In particular it will help young scientists and newcomers to the topic to gain a better understanding in areas such as condensed matter physics, in which the magnetic ?eld plays a key role either as a parameter controlling the Hamiltonian, or as an experimental tool to probe the underlying mechanism. This concerns mostly strongly correlated and (or) low dimensional systems. Rather than covering all these subjects in detail, the philosophy here is to give essential physical concepts in some of the most active ?elds, which have been quickly growing in the last ten to twenty years. Besides its role as a physical parameter in condensed matter physics, a large magnetic ?eld is essential to Electron Paramagentic Resonance (EPR) and Nuclear Magnetic Resonance (NMR) spectroscopies. The state of art of high resolution NMRin liquids and solids and high frequency EPRapplied to ?elds like chemistry and biology are also reviewed in this volume. The ?rst series of chapters is devoted to the integer and the Fractional Qu- tum Hall E?ects (FQHE) in two-dimensional electron systems. C. Glattli brushes an historical background and a comprehensive review of transport phenomena in these systems, including recent developments on the mesoscopic electronic transport at the edges of quantum Hall samples, chiral Luttinger liquids and fractional excitations. R.
"Amorphous Chalcogenide Semiconductors and Glasses" describes developments in the science and technology of this class of materials. This book offers an up-to-date treatment of chalcogenide glasses and amorphous semiconductors from basic principles to applications while providing the reader with the necessary theoretical background to understanding the material properties technology of this class of materials. This book offers an up-to-date treatment of chalcogenide glasses and amorphous semiconductors from basic principles to applications while providing the reader with the necessary theoretical background to understanding the material properties. Chalcogenides form a special class of materials, which have one or more of the elements from the chalcogen group, Group VI in the Periodic Table (S, Se. or Te) as a constituent; the chalcogen is mixed with other elements to form various "new" compounds and alloys. Chalcogenides are noncrystalline solids because their structure is "amorphous" or "glassy". Such structures have totally different properties than crystalline solids. Chalcogenide glasses have a number of very interesting and useful properties, which have been already exploited in the commercialization of new devices.
This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8 by vacuum, ultra-violet, laser-based, angle-resolved photoemission spectroscopy (ARPES). A new form of electron coupling has been identified in Bi2212, which occurs in the superconducting state. For the first time, the Bogoliubov quasiparticle dispersion with a clear band back-bending has been observed with two peaks in the momentum distribution curve in the superconducting state at a low temperature. Readers will find useful information about the technique of angle-resolved photoemission and the study of high-temperature superconductors using this technique. Dr. Wentao Zhang received his PhD from the Institute of Physics at the Chinese Academy of Sciences.
The 2002 Spring Meeting of the "Deutsche Physikalische Gesellschaft" was held in Regensburg from March 25th to 29th, 2002. The number of conference attendees has remained remarkably stable at about 2800, despite the decreas ing number of German PhD students. This can be taken as an indication that the program of the meeting was very attractive. The present volume of the "Advances in Solid State Physics" contains the written versions of most of the invited talks, also those presented as part of the Symposia. Most of these Symposia were organized by several divisions in collaboration and they covered fascinating selection of topics of current interest. I trust that the book reflects this year's status of the field in Germany. In particular, one notes a slight change in paradigms: from quantum dots and wires to spin transport and soft matter systems in the broadest sense. This seems to reflect the present general trend in physics. Nevertheless, a large portion of the invited papers as well as the discussions at the meeting concentrated on nanostrnctured matter.
Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions.
The field of high-temperature superconductivity has encouraged an inter disciplinary approach to research. It has required significant cooperation and collaboration among researchers, each of whom has brought to it a rich variety of experience from many other fields. Recently, great improvements have been made in the quality of research. The subject has matured and been launched into the next stage through the resonance between science and technology. The current progress of materials processing and engineering in this field is analogous to that previously seen in the development of semiconductors. These include the appearance of materials taking the place of YBa2Cu307 owing to their improved properties (higher critical temperatures and stronger flux pin ning) in which rare earth ions with large radii (La, Nd, Sm) substitute for Y; the development of technology enabling growth control on the nanometer scale; and precise and reproducible measurements that can be used as rigorous tests of theoretical models, which in turn are expected to lead to the develop ment of new devices. For further progress in high-T research, academics and c technologists must pool their knowledge and experience. I hope that this volume will promote that goal by providing the reader with the latest results of high-temperature superconductor research and will stimulate further discussion and collaboration.
Superfluidity and closely related to it, superconductivity are very general phenomena that can occur on vastly different energy scales. Their underlying theoretical mechanism of spontaneous symmetry breaking is even more general and applies to a multitude of physical systems. In these lecture notes, a pedagogical introduction to the field-theory approach to superfluidity is presented. The connection to more traditional approaches, often formulated in a different language, is carefully explained in order to provide a consistent picture that is useful for students and researchers in all fields of physics. After introducing the basic concepts, such as the two-fluid model and the Goldstone mode, selected topics of current research are addressed, such as the BCS-BEC crossover and Cooper pairing with mismatched Fermi momenta."
This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.
This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
The thesis by Merce Pacios exploits properties of carbon nanotubes to design novel nanodevices. The prominent electrochemical properties of carbon nanotubes are used to design diverse electrode configurations. In combination with the chemical properties and (bio)functionalization versatility, these materials prove to be very appropriate for the development of electrochemical biosensors. Furthermore, this work also evaluates the semiconductor character of carbon nanotubes (CNT) for sensor technology by using a field effect transistor configuration (FET). The CNT-FET device has been optimized for operating in liquid environments. These electrochemical and electronic CNT devices are highly promising for biomolecule sensing and for the monitoring of biological processes, which can in the future lead to applications for rapid and simple diagnostics in fields such as biotechnology, clinical and environmental research.
In the past decade, there has been a burst of new and fascinating physics associated to the unique properties of two-dimensional exciton polaritons, their recent demonstration of condensation under non-equilibrium conditions and all the related quantum phenomena, which have stimulated extensive research work. This monograph summarizes the current state of the art of research on exciton polaritons in microcavities: their interactions, fast dynamics, spin-dependent phenomena, temporal and spatial coherence, condensation under non-equilibrium conditions, related collective quantum phenomena and most advanced applications. The monograph is written by the most active authors who have strongly contributed to the advances in this area. It is of great interests to both physicists approaching this subject for the first time, as well as a wide audience of experts in other disciplines who want to be updated on this fast moving field.
The book is an expanded autobiography of the famous theoretical physicist Isaak Khalatnikov. He worked together with L.D. Landau at the Institute for Physical Problems lead by P.L. Kapitza. He is the co-author of L.D. Landau in a number of important works. They worked together in the frame of the so-called Nuclear Bomb Project. After the death of L.D. Landau, I.M. Khalatnikov initiated the establishment of the Institute for Theoretical Physics, named in honour of L.D. Landau, within the USSR Academy of Sciences. He headed this institute from the beginning as its Director. The institute inherited almost all traditions of the Landau scientific school and played a prominent role in the development of theoretical physics. So, this is a story about how the institute was created, how it worked, and about the life of the physicists in the "golden age" of the Soviet science. A separate chapter is devoted to todays life of the institute and the young generation of physicists working now in science. It is an historically interesting book on the development of Soviet and Russian science and presents the background of the Soviet nuclear bomb program in the cold war age. In war times, Khalatnikov was a chief of the military staff of nuclear research. He writes about the internal conditions of Soviet society, the way of operating of the Soviet authorities and ways for scientists to interact with them. It gives many interesting insights into the development of superconductivity and superfluidity. The book is written by the most experienced and best informed person among the few living Russian scientists in the environment of Landau. Many stories of the book were never published before and considered as "top secret".
Common methods of local magnetic imaging display either a high spatial resolution and relatively poor field sensitivity (MFM, Lorentz microscopy), or a relatively high field sensitivity but limited spatial resolution (scanning SQUID microscopy). Since the magnetic field of a nanoparticle or nanostructure decays rapidly with distance from the structure, the achievable spatial resolution is ultimately limited by the probe-sample separation. This thesis presents a novel method for fabricating the smallest superconducting quantum interference device (SQUID) that resides on the apex of a very sharp tip. The nanoSQUID-on-tip displays a characteristic size down to 100 nm and a field sensitivity of 10^-3 Gauss/Hz^(1/2). A scanning SQUID microsope was constructed by gluing the nanoSQUID-on-tip to a quartz tuning-fork. This enabled the nanoSQUID to be scanned within nanometers of the sample surface, providing simultaneous images of sample topography and the magnetic field distribution. This microscope represents a significant improvement over the existing scanning SQUID techniques and is expected to be able to image the spin of a single electron.
This book originated from a course given at the Univcrsidad Aut6noma of Madrid in the Spring of 1994 and in the Universidad Complutense of Madrid in 1995. The goal of these courses is to give the non-specialist an introduction to some old and new ideas in the field of strongly correlated systems, in particular the problems posed by the high-1 superconducting materials. As theoretical physicists, our starting viewpoint to address the problem of strongly correlat ed ferlnion systems and related issues of modern condensed matter physics .is the renormalization group approach applied both to quantU111 field theory and statistical physics. In recent years this has become not only a powerful tool for retrieving the essential physics of interacting systems but also a link between theoretical physics and modern condensed matter physics. Furthermore, once we have this common background for dealing with apparently different prob lems, we discuss more specific topics and even phenomenological aspects of the field. In doing so we have tried to make the exposition clear and simple, with out entering into technical details but focusing ill the fundamental physics of the phenomena under study. Therefore, ve expect that our experience ll1ay have some value to other people entering this fascinating field. We have divided these notes into three parts and each part into chapters, which correspond roughly to one or two lectures. Part I, Chaps. 1-2 (A. H. V."
This volume, intended as a contribution to the 10th birthday of high T"c"-superconductivity, conveys the essential ideas of the field and addresses researchers as well as graduate students. A special feature is the pedagogical treatment of a variety of modern computational methods to deal with non-pertubative effects in strongly correlated systems. Among the topics treated are the Hubbard models, real space renormalization group methods, quantum phase transitions, the non-linear sigma model, spin ladders and layers, and the quantum Hall effect.
This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver. Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.
Femtosecond laser micromachining of transparent material is a powerful and versatile technology. In fact, it can be applied to several materials. It is a maskless technology that allows rapid device prototyping, has intrinsic three-dimensional capabilities and can produce both photonic and microfluidic devices. For these reasons it is ideally suited for the fabrication of complex microsystems with unprecedented functionalities. The book is mainly focused on micromachining of transparent materials which, due to the nonlinear absorption mechanism of ultrashort pulses, allows unique three-dimensional capabilities and can be exploited for the fabrication of complex microsystems with unprecedented functionalities.This book presents an overview of the state of the art of this rapidly emerging topic with contributions from leading experts in the field, ranging from principles of nonlinear material modification to fabrication techniques and applications to photonics and optofluidics.
The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
On the current status of research activity, providing new information on the applications of SQUIDs, including magnetocardiography, immunoassays, and laser-SQUID microscopes, all of which are close to being commercially available. |
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