Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented."

Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

Semiconductors have been used widely in signal-level or "brain" applications. Since their invention in 1948, transistors have revolutionized the electronics industry in computers, information processing, and communications. Now, however, semiconductors are being used more and more where consid erable "brawn" is required. Devices such as high-power bipolar junction tran sistors and power field-effect transistors, as well as SCRs, TRlACs, GTOs, and other semiconductor switching devices that use a p-n-p-n regenerative effect to achieve bistable action, are expanding the power-handling horizons of semicon ductors and finding increasing application in a wide range of products including regulated power supplies, lamp dimmers, motor drives, pulse modulators, and heat controls. HVDC and electric-vehicle propulsion are two additional areas of application which may have a very significant long range impact on the tech nology. The impact of solid-state devices capable of handling appreciable power levels has yet to be fully realized. Since it first became available in late 1957, the SCR or silicon-controlled rec tifier (also called the reverse blocking triode thyristor) has become the most popular member of the thyristor family. At present, SCRs are available from a large number of manufacturers in this country and abroad. SCR ratings range from less than one ampere to over three thousand amperes with voltage ratings in excess of three thousand volts."

Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. "Quantum Dot Devices" is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source."

Joseph F. White has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications. He is thoroughly grounded in the physics and math ematics of the field, but has primarily the engineer's viewpoint, combining basic knowledge with experience and ingenuity to gen erate practical designs under constraints of required performance and costs of development and production. As a result of his teach ing experience and numerous technical papers and oral presenta tions, he has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook. Dr. White believes that an engineer must have a good understand ing of semiconductor physics, a thorough knowledge of microwave circuit theory, at least an elementary acquaintance with transistor drivers, and the ability to check and refine a microwave circuit on a computer terminal to be qualified for modern, creative design of microwave semiconductor control components. These subjects are well covered in approximately the first half of the book; the second half treats the general and specific design of switches, at tenuators, limiters, duplexers, and phase shifters, with many ex amples drawn from his experience and that of others."

Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics. Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations. This is needed to answer such novel questions as: Can one cool a drop of water by agitating an immersed nano-particle? How does heat flow if a Brownian particle pulls a polymer chain? Can one measure the free-energy of a system through a single realization of the associated stochastic process? This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers. It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.

IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

The study of cooperative phenomena is one of the dominant features of contem porary physics. Outside physics it has grown to a huge field of interdisciplinary investigation, involving all the natural sciences from physics via biology to socio logy. Yet, during the first few decades following the advent of quantum theory, the pursuit of the single particle or the single atom, as the case may be, has been so fascinating that only a small number of physicists have stressed the importance of collective behaviour. One outstanding personality among these few is Professor HERBERT FROHLICH. He has made an enormous contribution to the modern concept of cooperativity and has stimulated a whole generation of physicists. Therefore, it seemed to the editors very appropriate to dedicate a volume on "cooperative phenomena" to him on the occasion of his official retirement from his university duties. Nevertheless, in the course of carrying out this project, the editors have been somewhat amazed to find that they have covered the essentials of contemporary physics and its im pact on other scientific disciplines. It thus becomes clear how much HERBERT FROHLICH has inspired research workers and has acted as a stimulating discussion partner for others. FROHLICH is one of those exceptional scientists who have wor ked in quite different fields and given them an enormous impetus. Unfortunately, the number of scientists of such distinctive personality has been decreasing in our century."

For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design."

Since the discovery of superconductivity in 1911 by H. Kamerlingh Onnes, of the order of half a billion dollars has been spent on research directed toward understanding and utiliz ing this phenomenon. This investment has gained us fundamental understanding in the form of a microscopic theory of superconduc tivity. Moreover, superconductivity has been transformed from a laboratory curiosity to the basis of some of the most sensitive and accurate measuring devices known, a whole host of other elec tronic devices, a soon-to-be new international standard for the volt, a prototype generation of superconducting motors and gener ators, and magnets producing the highest continuous magnetic fields yet produced by man. The promise of more efficient means of power transmission and mass transportation, a new generation of superconducting motors and generators, and computers and other electronic devices with superconducting circuit elements is all too clear. The realization of controlled thermonuclear fusion is perhaps totally dependent upon the creation of enormous magnetic fields over large volumes by some future generation of supercon ducting magnets. Nevertheless, whether or not the technological promise of superconductivity comes to full flower depends as much, and perhaps more, upon economic and political factors as it does upon new technological and scientific breakthroughs. The basic science of superconductivity and its technological implications were the subject of a short course on "The Science and Technology of Superconductivity" held at Georgetown University, Washington, D. C., during 13-26 August 1971."

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

Spin wave theory of magnetism and BCS theory of superconductivity are typical theories of the time before renormalization group (RG) theory. The two theories consider atomistic interactions only and ignore the energy degrees of freedom of the continuous (infinite) solid. Since the pioneering work of Kenneth G. Wilson (Nobel Prize of physics in 1982) we know that the continuous solid is characterized by a particular symmetry: invariance with respect to transformations of the length scale. Associated with this symmetry are particular field particles with characteristic excitation spectra. In diamagnetic solids these are the well known Debye bosons. This book reviews experimental work on solid state physics of the last five decades and shows in a phenomenological way that the dynamics of ordered magnets and conventional superconductors is controlled by the field particles of the infinite solid and not by magnons and Cooper pairs, respectively. In the case of ordered magnets the relevant field particles are called GSW bosons after Goldstone, Salam and Weinberg and in the case of superconductors the relevant field particles are called SC bosons. One can imagine these bosons as magnetic density waves or charge density waves, respectively. Crossover from atomistic exchange interactions to the excitations of the infinite solid occurs because the GSW bosons have generally lower excitation energies than the atomistic magnons. According to the principle of relevance the dynamics is governed by the excitations with the lowest energy. The non relevant atomistic interactions with higher energy are practically unimportant for the dynamics.

While basic features of polarons were well recognized a long time ago and have been described in a number of review papers and textbooks, interest in the role of electron-phonon interactions and polaron dynamics in di?- ent materials has recently gone through a vigorous revival. Electron-phonon interactions have been shown to be relevant in many inorganic and organic semiconductors and polymers, colossal magnetoresistance oxides, and tra- port through nanowires and quantum dots also often depends on vibronic displacements of ions. These interactions presumably play a role in hi- temperature superconductors as well. The continued interest in polarons extends beyond the physical description of advanced materials. The ?eld has been a testing ground for analytical, semi-analytical, and numerical techniques, such as path integrals, strong-coupling perturbation expansion, advanced variational methods, exact diagonalization, Quantum Monte Carlo, and other techniques. This book reviews some recent developments in the ?eld of polarons, starting with the basics and covering a number of active directions of research. Single- and multipolaron theories have o?ered more insight into colossal magnetoresistance and in a broad spectrum of ph- ical properties of structures with reduced dimension and dimensionality such as transport, optical absorption, Raman scattering, photoluminescence, magneto-optics, etc. While nobody - at present - has a ?nal theory of hi- temperature superconductivity, we discuss one alternative (polaronic) route. We have bene?ted from discussions with many experts in the ?eld.

The aim of this book is to acquaintthe reader with the phenomenon of sup- conductivity and the high temperature superconductors discovered in 1986 by Bednorz and Muller. Just after this discovery, a lot of research work was carried out by the scientists worldwide over for more than about 10 years. This book describes the superconductivity phenomenon (Chap. 1), the structureofhighT superconductors(Chap.2), thecriticalcurrents(Chap.3), c synthesis of high T superconductors (Chap. 3), the superconductivity in c cuprates (Chap. 4), proximity e?ect and SQUID devices, their design criteria and noise aspects (Chap. 6), theories (Chap. 7) and applications (Chap. 8). TheauthorisgratefultoProfessorO.N.Srivastava, BanarasHinduUniv- sity, VaranasiforvaluableguidanceanddiscussionsduringPh.D.tenureofthe author andalsothankful to Prof.R.S. Tiwari, Dr. K.Ramakrishna, Dr. Balak Das, Dr. K.K. Verma, Dr. G.D. Varma andDr. H.K. Singh, who workedalong with the author during researchat B.H.U., leading to his Ph.D. The author is thankful to Prof. D.P. Tiwari (Head, Physics Department, A.P.S. University, Rewa), Dr. A.P. Mishra and Dr. S.L. Agrawal, Physics Department, A.P.S. University, for boosting the morale. The author is thankful to scientists and researchers whose work/papers have been consulted for preparing the manuscript. Further I wish to express thanks to Mr. Dharmendra Saxena for preparing type-sc

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

Electronic Properties of Fullerenes and other Novel Materials gives an overview of the state-of-the-art research. It presents most recent results on preparation, experimental analysis by electron spectroscopy, infrared and Raman spectroscopy, luminescence, and nonlinear optical, as well as possible technological applications. Emphasis is also placed on the superconducting properties of Fullerenes. The introductory and advanced contributions provide a good survey of the current status of this rapidly developing field.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials, andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables, space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junction

Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been discovered and developed, and our knowledge of the physical and other properties of oxide superconductors has deepened through extensive and intensive research. This knowledge has advanced superconductivity science and technology from the initial questioning stage to a more developed but still uncertain second stage where research activity in superconductivity now overlaps with fields of application. Generally speaking, science resonates with technology. Science not only complements but also competes with or stimulates technology. New scientific knowledge has triggered the second technological research stage. Much progress has been made in the development of practical devices, encouraging the application of superconductors in areas such as human levitation, a high speed levitated bearing, large current transforming leads, and high frequency devices. This technological progress has increased our understanding of the science involved, such as flux pinning and dynamics, and anomalous long-range superconducting interactions. At this important stage, international cooperation and collaborative projects can effectively sustain aggressive research and development in order to advance superconductivity to the next stages. The ISS Symposium is expected to serve as a venue for increasing our knowledge of superconductivity and for exchanging visions for future research and applications, through the presentation and discus of the latest research results. These proceedings also aim to summarize sion annual progress in high-Tc superconductivity in all fields."

The occurrence of superconductivity among the d- and f-band metals remains one of the unsolved problems of physics. The first Rochester conference on this subject in October 1971 brought together approximately 100 experimentalists and theorists, and that conference was considered successful; the published proceedings well-represented the current research at that time and has served as a "handbook" to many. In the four and one half years since the first conference, impressive progress has been made in many areas (although Berndt Matthias would be one of the first to point out that raising the m"aximum transition temperature by a significant amount was not one of them). For a variety of reasons, I decided that it was time for a Second Rochester Conference on Superconductivity in d- and f-Band Metals and it was held on April 30 and May 1, 1976. It would appear that this conference was even more successful judging from the quality of the talks and various comments made to me. I believe that this was due to the fact that the subject matter is exciting and that the timing was particularly appropriate for several areas of research that were discussed. However, I cannot rule out other factors such as the one advanced humorously by J.

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph ous state. The two extremes of this range attract a large amount of inter est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984."

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)

viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity."