A much-needed update on complex high-temperature superconductors, focusing on materials aspects; this timely book coincides with a recent major break-through of the discovery of iron-based superconductors. It provides an overview of materials aspects of high-temperature superconductors, combining introductory aspects, description of new physics, material aspects, and a description of the material properties This title is suitable for researchers in materials science, physics and engineering. Also for technicians interested in the applications of superconductors, e.g. as biomagnets

The book is devoted to nanostructures and nanostructured materials containing both amorphous and crystalline phases with a particular focus on their thermal properties. It is the first time that theoreticians and experimentalists from different domains gathered to treat this subject. It contains two distinct parts; the first combines theory and simulations methods with specific examples, while the second part discusses methods to fabricate nanomaterials with crystalline and amorphous phases and experimental techniques to measure the thermal conductivity of such materials. Physical insights are given in the first part of the book, related with the existing theoretical models and the state of art simulations methods (molecular dynamics, ab-initio simulations, kinetic theory of gases). In the second part, engineering advances in the nanofabrication of crystalline/amorphous heterostructures (heavy ion irradiation, electrochemical etching, aging/recrystallization, ball milling, PVD, laser crystallization and magnetron sputtering) and adequate experimental measurement methods are analyzed (Scanning Thermal Microscopy, Raman, thermal wave methods and x-rays neutrons spectroscopy).

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Thoroughly revised and updated, this highly successful textbook guides students through the analysis and design of transistor circuits. It covers a wide range of circuitry, both linear and switching. Transistor Circuit Techniques: Discrete and Integrated provides students with an overview of fundamental qualitative circuit operation, followed by an examination of analysis and design procedure. It incorporates worked problems and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies, which further develop many of the circuit design techniques introduced in earlier chapters. Part of the Tutorial Guides in Electronic Engineering series, this book is intended for first and second year undergraduate courses. A complete text on its own, it offers the added advantage of being cross-referenced to other titles in the series. It is an ideal textbook for both students and instructors.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

High-temperature superconducting (HTS) materials are becoming more and more attractive in the context of designing RF/microwave filters because of their lower losses and excellent performance. This book focuses on the superconducting microwave filter and its application in modern communication. It first presents the basic principles, HTS materials and processing and then introduces several types of multi-band HTS bandpass filter (BPF), discussing their properties and analyzing equivalent circuit models and their performances. This book is a valuable resource for students and researchers who are interested in wireless communication and RF/microwave design.

The book comprises six chapters which deal with the critical currents and the ferromagnetism-superconductivity coexistence in high-Tc oxides. It begins by gathering key data for superconducting state and the fundamental properties of the conventional superconductors, followed by a recap of the basic theories of superconductivity. It then discusses the differences introduced by the structural anisotropy on the Ginzburg-Landau approach and the Lawrence-Doniach model before addressing the dynamics of vortices and the ferromagnetism-superconductivity coexistence in high-Tc oxides, and provides an outline of the pinning phenomena of vortices in these materials, in particular the pinning of vortices by the spins. It elucidates the methods to improve the properties of superconducting materials for industrial applications. This optimization aims at obtaining critical temperatures and densities of critical currents at the maximum level possible. Whereas the primary objective is the basic mechanisms pushing the superconductivity towards high temperatures, the secondary objective is to achieve a better understanding of the vortices pinning. This book is targeted at researchers and graduate students of fundamental and engineering sciences.

Photonics is a key technology of this century. The combination of photonics and silicon technology is of great importance because of the potentiality of coupling electronics and optical functions on a single chip. Many experimental and theoretical studies have been performed to understand and design the photonic properties of silicon nanocrystals. Generation of light in silicon is a challenging perspective in the field; however, the issue of light-emitting devices does not limit the activity in the field. Research is also focused on light modulators, optical waveguides and interconnectors, optical amplifiers, detectors, memory elements, photonic crystals, etc. A particularly important task of silicon nanostructures is to generate electrical energy from solar light. Understanding the optical properties of silicon-based materials is central in designing photonic components. It is not possible to control the optical properties of nanoparticles without fundamental information on their microscopic structure, which explains a large number of theoretical works on this subject. Many fundamental and practical problems should be solved in order to develop this technology. In addition to open fundamental questions, it is even more difficult to develop the known experimental results towards practical realization. However, the world market for silicon photonics is expected to be huge; thus, more research activity in the field of silicon nanophotonics is expected in the future. This book describes different aspects of silicon nanophotonics, from fundamental issues to practical devices. The second edition is essentially different from the book published in 2008. Eight chapters of the first edition are not included in the new book, because the recent progress on those topics has not been large enough. Instead, seven new chapters appear. The other eight chapters are essentially modified to describe recent achievements in the field.

This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD effective mass superlattices under magnetic quantization. An important concept of the measurement of the band gap in HD optoelectronic materials in the presence of external photo-excitation has been discussed in this perspective. The influences of magnetic quantization, crossed electric and quantizing fields, the intense electric field on the TPM in HD semiconductors and superlattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the various fields for which this particular series is dedicated.

CMOS: Front-End Electronics for Radiation Sensors offers a comprehensive introduction to integrated front-end electronics for radiation detectors, focusing on devices that capture individual particles or photons and are used in nuclear and high energy physics, space instrumentation, medical physics, homeland security, and related fields. Emphasizing practical design and implementation, this book: Covers the fundamental principles of signal processing for radiation detectors Discusses the relevant analog building blocks used in the front-end electronics Employs systematically weak and moderate inversion regimes in circuit analysis Makes complex topics such as noise and circuit-weighting functions more accessible Includes numerical examples where appropriate CMOS: Front-End Electronics for Radiation Sensors provides specialized knowledge previously obtained only through the study of multiple technical and scientific papers. It is an ideal text for students of physics and electronics engineering, as well as a useful reference for experienced practitioners.

• Offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence
• Presents comprehensive coverage of process sequences
• Introduces readers to modern simulation tools
• Addresses the practical aspects of integrated circuit fabrication
• Clearly explains basic processing theory

This book provides in-depth knowledge about the fundamental physical properties of bulk and low dimensional semiconductors (LDS). It also explains their applications to optoelectronic devices. The book incorporates two major themes. The first theme, starts from the fundamental principles governing the classification of solids according to their electronic properties and leads to a detailed analysis of electronic band structure and electronic transport in solids. It then focuses on the electronic transport and optical properties of semiconductor compounds, size quantization and the analysis of abrupt p-n junctions where a full analysis of the fundamental properties of intrinsic and doped semiconductors is given. The second theme is device-oriented. It aims to provide the reader with understanding of the design, fabrication and operation of optoelectronic devices based on novel semiconductor materials, such as high-speed photo detectors, light emitting diodes, multi-mode and single-mode lasers and high efficiency solar cells. The book appeals to researchers and high-level undergraduate students.

Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics.

Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations.

This is needed to answer such novel questions as:

Can one cool a drop of water by agitating an immersed nano-particle?

How does heat flow if a Brownian particle pulls a polymer chain?

Can one measure the free-energy of a system through a single realization of the associated stochastic process?

This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers.

It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.

Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges. This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, focussing on the most recent developments in the methods. These developments largely stem from the requirements of new materials - such as nitrides, the plethora of oxide semiconductors, and 2-D semiconductors - whose physical characteristics and manufacturing challenges are much more complex than in conventional Si/Ge or GaAs. Each chapter addresses both the identification and quantification of the defects and their characteristics, and goes on to suggest routes for controlling the defects and hence the semiconductor properties. The book provides valuable information and solutions for scientists and engineers working with semiconductors and their applications in electronics.

This is the first monograph that strives to give a complete and detailed description of the collective modes (CMs) in unconventional superfluids and superconductors (UCSF&SC). Using the most powerful method of modern theoretical physics - the path (functional) integral technique - authors build the three- and two-dimensional models for s-, p- and d-wave pairing in neutral as well as in charged Fermi-systems, models of superfluid Bose-systems and Fermi-Bose-mixtures. Within these models they study the collective properties of such systems as superfluid 3He, superfluid 4He, superfluid 3He-4He mixtures, superfluid 3He-films, superfluid 3He and superfluid 3He-4He mixtures in aerogel, high temperature superconductors, heavy-fermion superconductors, superconducting films etc. Authors compare their results with experimental data and predict a lot of new experiments on CMs study. This opens for experimentalists new possibilities for search of new intriguing features of collective behavior of UCSF&SC.The monograph creates the new scientific direction - the spectroscopy of collective modes in unconventional superfluids and superconductors. It will be useful for both theorists and experimentalists, studying superfluids and superconductors, low temperature physics, condensed matter physics, solid state physics. It could be used by graduate students specializing in the same areas.

"Semiconductor Devices: Physics and Technology, Third Edition" is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Provides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bonding, heterostructure nanowires, and more. Basic knowledge on dislocations in semiconductors and innovative methods to eliminate threading dislocations are provided, and successful device applications are reviewed. It covers a variety of important semiconductor materials like SiGe, III-V including GaN and nano-wires; epitaxial methods like molecular beam epitaxy and metal organic vapor phase epitaxy; and devices like transistors and lasers etc.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement.

Serious Competitors to Germanium and Silicon Radiation Detectors

Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolution of germanium by a factor of three. However, while compound semiconductors are routinely used at infrared and optical wavelengths, their development in other wavebands has been plagued by material and fabrication problems. So far, only a few have evolved sufficiently to produce commercial detection systems.

From Crystal Growth to Spectroscopic Performance

Bringing together information scattered across many disciplines, this book summarizes the current status of research in compound semiconductor radiation detectors. It examines the properties, growth, and characterization of compound semiconductors as well as the fabrication of radiation sensors, with particular emphasis on the X- and gamma-ray regimes. It explores the limitations of compound semiconductors and discusses current efforts to improve spectral performances, pointing to where future discoveries may lie.

A timely resource for the established researcher, this book serves as a comprehensive and illustrated reference on material science, crystal growth, metrology, detector physics, and spectroscopy. It can also be used as a textbook for those new to the field of compound semiconductors and their application to radiation detection and measurement.

This open access book reports on cutting-edge electrical engineering and microelectronics solutions to foster and support digitalization in the semiconductor industry. Based on the outcomes of the European project iDev40, which were presented at the two first conference editions of the European Advances in Digital Transformation Conference (EADCT 2018 and EADTC 2019), the book covers different, multidisciplinary aspects related to digital transformation, including technological and industrial developments, as well as human factors research and applications. Topics include modeling and simulation methods in semiconductor operations, supply chain management issues, employee training methods and workplaces optimization, as well as smart software and hardware solutions for semiconductor manufacturing. By highlighting industrially relevant developments and discussing open issues related to digital transformation, the book offers a timely, practice-oriented guide to graduate students, researchers and professionals interested in the digital transformation of manufacturing domains and work environments.

Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in superconductivity, the book includes contributions from many pioneers who are responsible for important steps forward in the field.

The text first discusses interesting stories of the discovery and gradual progress of theory and experimentation. Emphasizing key developments in the early 1950s and 1960s, the book looks at how superconductivity started to permeate society and how most of today s applications are based on the innovations of those years. It also explores the genuine revolution that occurred with the discovery of high temperature superconductors, leading to emerging applications in power storage and fusion reactors.

Superconductivity has become a vast field and this full-color book shows how far it has come in the past 100 years. Along with reviewing significant research and experiments, leading scientists share their insight and experiences working in this exciting and evolving area."

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter-in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems-and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.