Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges. This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, focussing on the most recent developments in the methods. These developments largely stem from the requirements of new materials - such as nitrides, the plethora of oxide semiconductors, and 2-D semiconductors - whose physical characteristics and manufacturing challenges are much more complex than in conventional Si/Ge or GaAs. Each chapter addresses both the identification and quantification of the defects and their characteristics, and goes on to suggest routes for controlling the defects and hence the semiconductor properties. The book provides valuable information and solutions for scientists and engineers working with semiconductors and their applications in electronics.

This is the first monograph that strives to give a complete and detailed description of the collective modes (CMs) in unconventional superfluids and superconductors (UCSF&SC). Using the most powerful method of modern theoretical physics - the path (functional) integral technique - authors build the three- and two-dimensional models for s-, p- and d-wave pairing in neutral as well as in charged Fermi-systems, models of superfluid Bose-systems and Fermi-Bose-mixtures. Within these models they study the collective properties of such systems as superfluid 3He, superfluid 4He, superfluid 3He-4He mixtures, superfluid 3He-films, superfluid 3He and superfluid 3He-4He mixtures in aerogel, high temperature superconductors, heavy-fermion superconductors, superconducting films etc. Authors compare their results with experimental data and predict a lot of new experiments on CMs study. This opens for experimentalists new possibilities for search of new intriguing features of collective behavior of UCSF&SC.The monograph creates the new scientific direction - the spectroscopy of collective modes in unconventional superfluids and superconductors. It will be useful for both theorists and experimentalists, studying superfluids and superconductors, low temperature physics, condensed matter physics, solid state physics. It could be used by graduate students specializing in the same areas.

Provides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bonding, heterostructure nanowires, and more. Basic knowledge on dislocations in semiconductors and innovative methods to eliminate threading dislocations are provided, and successful device applications are reviewed. It covers a variety of important semiconductor materials like SiGe, III-V including GaN and nano-wires; epitaxial methods like molecular beam epitaxy and metal organic vapor phase epitaxy; and devices like transistors and lasers etc.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

This open access book reports on cutting-edge electrical engineering and microelectronics solutions to foster and support digitalization in the semiconductor industry. Based on the outcomes of the European project iDev40, which were presented at the two first conference editions of the European Advances in Digital Transformation Conference (EADCT 2018 and EADTC 2019), the book covers different, multidisciplinary aspects related to digital transformation, including technological and industrial developments, as well as human factors research and applications. Topics include modeling and simulation methods in semiconductor operations, supply chain management issues, employee training methods and workplaces optimization, as well as smart software and hardware solutions for semiconductor manufacturing. By highlighting industrially relevant developments and discussing open issues related to digital transformation, the book offers a timely, practice-oriented guide to graduate students, researchers and professionals interested in the digital transformation of manufacturing domains and work environments.

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement.

Serious Competitors to Germanium and Silicon Radiation Detectors

Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolution of germanium by a factor of three. However, while compound semiconductors are routinely used at infrared and optical wavelengths, their development in other wavebands has been plagued by material and fabrication problems. So far, only a few have evolved sufficiently to produce commercial detection systems.

From Crystal Growth to Spectroscopic Performance

Bringing together information scattered across many disciplines, this book summarizes the current status of research in compound semiconductor radiation detectors. It examines the properties, growth, and characterization of compound semiconductors as well as the fabrication of radiation sensors, with particular emphasis on the X- and gamma-ray regimes. It explores the limitations of compound semiconductors and discusses current efforts to improve spectral performances, pointing to where future discoveries may lie.

A timely resource for the established researcher, this book serves as a comprehensive and illustrated reference on material science, crystal growth, metrology, detector physics, and spectroscopy. It can also be used as a textbook for those new to the field of compound semiconductors and their application to radiation detection and measurement.

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in superconductivity, the book includes contributions from many pioneers who are responsible for important steps forward in the field.

The text first discusses interesting stories of the discovery and gradual progress of theory and experimentation. Emphasizing key developments in the early 1950s and 1960s, the book looks at how superconductivity started to permeate society and how most of today s applications are based on the innovations of those years. It also explores the genuine revolution that occurred with the discovery of high temperature superconductors, leading to emerging applications in power storage and fusion reactors.

Superconductivity has become a vast field and this full-color book shows how far it has come in the past 100 years. Along with reviewing significant research and experiments, leading scientists share their insight and experiences working in this exciting and evolving area."

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter-in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems-and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Worldwide, many researchers are fascinated from the rich physics of se- conductor quantum dots (QDs) and their high potential for applications in photonics and quantum information technology. QDs are nanometer-sized three-dimensional structures which con?ne electrons and holes in dimensions oftheircorrespondingDeBrogliewavelength.Asaresult,theenergylevelsare quantized and for that reason they are also often referred as arti?cial atoms. Epitaxially grown QDs which are the subject of this book are embedded in a solid state semiconductor matrix and their size, shape, composition, and lo- tion can be tailored to a large extent by modern growth techniques. In QDs, excitations can involve more than a single carrier and interaction among the carriers modify or even dominate the emission properties. Therefore, a simple two-level description is only appropriate under certain well de?ned expe- mental conditions. Tremendous progress has been obtained in understanding their electronic, optical and spin properties mainly by performing single dot spectroscopy and using appropriate theoretical models.

This thesis describes a novel and robust way of deriving a Hamiltonian of the interacting boson model based on microscopic nuclear energy density functional theory. Based on the fact that the multi-nucleon induced surface deformation of finite nucleus can be simulated by effective boson degrees of freedom, observables in the intrinsic frame, obtained from self-consistent mean-field method with a microscopic energy density functional, are mapped onto the boson analog. Thereby, the excitation spectra and the transition rates for the relevant collective states having good symmetry quantum numbers are calculated by the subsequent diagonalization of the mapped boson Hamiltonian. Because the density functional approach gives an accurate global description of nuclear bulk properties, the interacting boson model is derived for various situations of nuclear shape phenomena, including those of the exotic nuclei investigated at rare-isotope beam facilities around the world. This work provides, for the first time, crucial pieces of information about how the interacting boson model is justified and derived from nucleon degrees of freedom in a comprehensive manner.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

The mid-infrared (2-10Am) spectral region is of enormous scientific and technological interest because it contains the strongest fingerprint absorption bands of a number of pollutant and toxic gases which require monitoring in a variety of different situations (e.g., oil-rigs, coal mines, landfill sites and car exhausts) and in concentrations, ranging from parts per billion to almost 100%. Organic liquids, narcotics and many biological and bio-medical analytes also have fingerprint absorptions in this spectral range. In addition, the atmospheric transmission window between 3 Am and 5 Am enables free-space optical communications, thermal imaging and the development of infrared counter-measures for "homeland security." However, many of these applications require technology based on un-cooled, efficient, inexpensive sources and detectors which are not yet available and so wide exploitation of this spectral range has yet to take place.

There is no doubt that the practical realisation of mid-infrared semiconductor lasers, LEDs and detectors which can operate at room temperature will transform them from a specialist research curiosity to a pervasive technology that will unlock a wide variety of applications. Many of the necessary developments depend on the ability to fabricate suitable high-quality epitaxial materials through the use of strained-layer engineering at the nanoscale and to manipulate the optoelectronic properties of the corresponding quantum device structures. There are a number of different materials, active region designs and device structures currently being investigated for both light sources and detectors. Many of the salient features together with recent progress ineach of these areas is presented in this text.

Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological advances in this rapidly developing area. It is divided into four parts. First, some of the basic physics and the main problems facing the device engineer (together with a comparison of possible solutions) are presented. Next, there is a consideration of the different types of lasers currently under development. For practical mid-infrared applications semiconductor lasers must operate at room temperature and several different approaches to achieve this, particularly within the difficult 3a "4 Am spectral region are discussed. Part III reviews recent work on light-emitting diodes and photodetectors and also deals with negative luminescence. The final part of the book is concerned with applications and highlights, once more, the diversity and technological importance of the mid-infrared spectral region.

The text has been produced by a world-wide authorship of experts in mid-infrared physics and technology, each working at the cutting edge in their own specialist area. Mid-infrared Semiconductor Optoelectronics will be an invaluable reference for researchers and graduate students drawn from backgrounds in physics, electronic and electrical engineering and materials science. Its breadth and thoroughness also make it an excellent starting point for further research and investigation.

A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This book introduces the wider field of functional nanomaterials sciences, with a strong emphasis on semiconductor photonics. Whether you are studying photonic quantum devices or just interested in semiconductor nanomaterials and their benefits for optoelectronic applications, this book offers you a pedagogical overview of the relevant subjects along with topical reviews. The book discusses different yet complementary studies in the context of ongoing international research efforts, delivering examples from both fundamental and applied research to a broad readership. In addition, a hand-full of useful optical techniques for the characterization of semiconductor quantum structures and materials are addressed. Moreover, nanostructuring methods for the production of low-dimensional systems, which exhibit advantageous properties predominantly due to quantum effects, are summarized. Science and engineering professionals in the interdisciplinary domains of nanotechnology, photonics, materials sciences, and quantum physics can familiarize themselves with selected highlights with eyes towards photonic applications in the fields of two-dimensional materials research, light-matter interactions, and quantum technologies.

This book is an introductory work on the broad topics included in Materials Science. It encompasses a number of different materials classes and properties with a focus on the structure-property relationships between them. Each class of materials will include and discuss recycling techniques and other green methods of production. Materials Chemistry: For Scientists and Engineers is ideal for all newcomers to the fi eld as well as for those seeking a knowledge of solid state chemistry.

This book introduces readers to the characteristic features of electromagnetic phenomena in superconductivity. It first demonstrates not only that the diamagnetism in the superconductivity complies with Maxwell's theory, which was formulated before the discovery of superconductivity, but also that the dominant E-B analogy in the electromagnetism loses perfection without the superconductivity. The book then explores flux pinning, which is responsible for the non-dissipative current in DC, leading to irreversibility in AC. Drawing on Maxwell's work, it also proves theoretically that if there is no energy dissipation in the superconductivity caused by the break in time reversal symmetry, it contradicts the thermodynamic principle of energy conservation - something that had previously only been proved experimentally. Lastly, the book addresses the longitudinal magnetic field effect, and explains how this phenomenon leads to a new development of Maxwell's theory. Featuring numerous appendices to help readers understand the methods of derivation of equations, this book offers students and young scientists an introduction to applied superconductivity, especially in the context of power applications. Presenting the characteristic features of electromagnetic phenomena in superconductivity from basic to advanced topics for applications, the book offers a valuable resource for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

This book presents the basics of superconductivity and applications of superconducting magnets. It explains the phenomenon of superconductivity, describes theories of superconductivity, and discusses type II and high-temperature cuprate superconductors. The main focus of the book is the application of superconducting magnets in accelerators, fusion reactors and other advanced applications such as nuclear magnetic resonance (NMR), magnetic resonance imaging (MRI), high-gradient magnetic separation (HGMS), and superconducting magnetic energy storage (SMES). This new and significantly extended second edition covers the state of the art in the development of novel superconductors for advanced magnet applications, as well as the production of practical superconducting wires, tapes, and ultra high current cables used for high-field magnets. It includes two new chapters each devoted to MgB2 and Fe-based superconductors, and discusses the recently developed and world record-setting 45.5-Tesla magnetic field generated by a combination of conventional and high-temperature cuprate superconducting magnets. In addition, it discusses the status and outlook of all current and future nuclear fusion reactors worldwide. The chapter on accelerators includes the ongoing efforts to build high luminosity LHC (HL-LHC), the high-energy 28 TeV LHC (HE-LHC), the future circular collider (FCC) at CERN, and the just launched electro-ion collider (EIC) at Brookhaven National Laboratory. The book is based on the long-standing experience of the author in studying superconducting materials, building magnets and delivering numerous lectures to research scholars and students. The book provides comprehensive and fundamental knowledge in the field of applied superconductivity, greatly benefiting researchers and graduate students wishing to learn more about the various aspects of superconductivity and advanced magnet applications.

"Semiconductor-On-Insulator Materials for NanoElectronics Applications is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.