This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Presents the latest global achievements in the processing and applications of high-Tc superconductors Discusses large-scale applications of high-temperature superconducting materials Contains contributions from several eminent scientists

Discusses the method to grow not only graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments, on Cu interconnects in order to obtain good-quality and reliable interconnects Provides the basic understanding of graphene-Cu interaction mechanism Introduces a novel graphene growth process and graphene-assisted electroless copper plating

This textbook is aimed at second-year graduate students in Physics, Electrical Engineer ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan tization and elementary excitations in solids, of the dielectric properties of semicon ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers

The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.

Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:

• SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
• Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
• Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits

With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

Discusses latest updates in the field of ultra-low power semiconductor transistors. Provides both experimental and analytical solutions for TFETs and NCFETs. Presents the synthesis and fabrication of FinFETs. Gives out details of 2D Materials and 2D transistors. Explores the application of FETs for biosensing in healthcare field.

When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of, perhaps, the most important invention of the century. Historians have assigned the invention of integrated circuits to Jack Kilby and Robert Noyce. In this book, the author argues that the group of inventors was much larger. This richly illustrated account is a personal recollection of the development of integrated circuits and personalities a" such as Russell Ohl, Karl Lark-Horovitz, William Shockley, Carl Frosch, Lincoln Derick, Calvin Fuller, Kurt Lehovec. Jean Hoerni, Sheldon Roberts, Jay Last, Isy Haas, Bob Norman, Dave Allison, Jim Nall, Tom Longo, Bob Widlar, Dave Talbert, Frank Wanlass, and Federico Faggin. Here is the first comprehensive behind-the-scenes account of the history of the integrated circuit, the microelectronics industry, and the people closely involved in the development of the transistor and the integrated circuit.

"Your book is going to make a major contribution to semiconductor history. You and I agree that, while the world loves a hero, semiconductor progress depended on the efforts and ideas of a large number of people, and that moving forward depended on contributors going back a few decades in some cases. Also, as is the case with most inventions, a number of people with access to the same pool of common knowledge were working independently at the same time to put it all together and to make the necessary extensions to the existing technology and whorealized that the time was right for society to accept the new concepts. Your diligent research points all of this out."

Dr. Jay Last, Former Shockley Laboratories employee, co-founder of Fairchild Semiconductor, co-founder of Amelco Semiconductor, and manager of Fairchilda (TM)s group which designed and produced the world first planar integrated circuit.

"Bo Lojek presents a remarkable document of the most important and significant technical development of our times. He describes in astounding detail the engineering efforts of modern microelectronics. He concentrates on the history of silicon semiconductor devices. Californiaa (TM)s "Silicon Valley" is the center of attention, together with its ancestry of transistor invention at Bell Laboratories. He has collected a wealth of illustrative documentation, gives incisive insight into the lives of the main actors and shows the often tragic fates of the engineers and businessmen. He does not hide his firm belief in the individual engineer and warns of the retarding influence of present-day political correctness."

Dr. Hans J. Queisser, Former Shockley Semiconductor scientist and retired director of the Max-Planck-Institute for Solids, Stuttgart, Germany.

"The technical history of the semiconductor history rivals the 1849 California Gold Rush as a period filled with excitement and opportunity. Although I cannot first hand validate its complete accuracy, I enthusiastically encourage you to read the collected facts, opinions, and views of an author who was actually part of this amazing period, viewing it as a successful practicing Engineer during this "gold rush" - like hey-day of the semiconductor industry.

For educators andtechnologists you will find this collection of data, facts, and opinions, collected and observed first hand by the author, fascinating! It is a tough read for others due to the writing experience of the author and its technical focus."

John F. Gifford, Former Fairchild Semiconductor Marketing Manager of Linear Integrated Circuits, co-founder of Advanced Micro Devices, and President and Chief Executive Officer of Maxim Integrated Products.

"Bo Lojek gets it right! There are few industries as dynamic as semiconductors and the history of the semiconductor industry is still unfolding. This book gives the history of people, places and technology that resulted in todaya (TM)s semiconductor industry. I particularly like the inclusion of many technical pieces in the book."

Robert Dobkin, Former National Semiconductor Director of Advanced Circuit Development and co-founder and Chief Technical Officer of Linear Technology Corporation.

The success of spintronics - the science and technology of storing, processing, sensing and communicating information using the quantum mechanical spin degree of freedom of an electron - is critically dependent on the ability to inject, detect and manipulate spins in semiconductors either by incorporating ferromagnetic materials into device architectures or by using external magnetic and electric fields. In spintronics, the controlled generation and manipulation of spin polarization in nonmagnetic semiconductors is required for the design of spin-sensitive devices ranging from spin-qubit hosts, quantum memory and gates, quantum teleporters, spin polarizers and filters, spin-field-effect-transistors, and spin-splitters, among others. One of the major challenges of spintronics is to control the creation, manipulation, and detection of spin polarized currents by purely electrical means. Another challenge is to preserve spin coherence in a device for the longest time or over the longest distance in order to produce reliable spintronic processors. These challenges remain daunting, but some progress has been made recently in overcoming some of the steepest obstacles. This book covers some of the recent advances in the field of spintronics using semiconductors.

* Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals * Contains the latest research and developments in the field * Written in an accessible yet rigorous manner

The author of this unique volume, Lev P Gor'kov is internationally renowned for his seminal contribution in the fundamentals of the Theory of Superconductivity, Theory of Metals, the field of Quantum Statistical Physics, and more generally, Organic Metals and the like. Each reprints' group is preceded by the author's introductions and commentaries clarifying the formulation of a problem, summarizing the essence of the results and placing them in the context of recent developments. The author belongs to the last generation of scientists who were the direct disciples of the legendary Russian theorist Lev Landau. And Gor'kov's achievements reflect the unique style and the originality of this famous Scientific School. As with other Russian scientists of his generation, many of the pioneering papers by Lev Gor'kov have been published in the Russian journals that are hard-to-reach for modern readers, students and postdocs. Allowing readers a glimpse into the various ways that the field of condensed matter physics was evolving for more than half a century, the volume is a valuable source for historians of science.

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

Focusing on the physical properties of diamond and sapphire, this monograph provides readers with essential details on crystal structure and growth, mechanical properties, thermal properties, optical properties, light scattering of diamond and sapphire crystals, and sapphire lasers. Various physical properties are comprehensively discussed: Mechanical properties include hardness, tensile strength, compressive strength, and Young's modulus. Thermal properties include thermal expansion, specific heat, and thermal conductivity. Optical properties of diamond and sapphire include transmission, refractive index, and absorption. Light scattering includes Raman scattering and Brillouin scattering. Sapphire lasers include chromium-doped and titanium-doped lasers. Aimed at researchers and industry professionals working in materials science, physics, electrical engineering, and related fields, this monograph is the first to concentrate solely on physical properties of these increasingly important materials.

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.

This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.

"Introduction to Thin Film Transistors" reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si: H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors.

The large scale manufacturing of a-Si: H TFTs forms the basis of theactive matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si: H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics.

As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT.

The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included.

For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated.

This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes. "

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

This book introduces the foundations and fundamentals of electronic circuits. It broadly covers the subjects of circuit analysis, as well as analog and digital electronics. It features discussion of essential theorems required for simplifying complex circuits and illustrates their applications under different conditions. Also, in view of the emerging potential of Laplace transform method for solving electrical networks, a full chapter is devoted to the topic in the book. In addition, it covers the physics and technical aspects of semiconductor diodes and transistors, as well as discrete-time digital signals, logic gates, and combinational logic circuits. Each chapter is presented as complete as possible, without the reader having to refer to any other book or supplementary material. Featuring short self-assessment questions distributed throughout, along with a large number of solved examples, supporting illustrations, and chapter-end problems and solutions, this book is ideal for any physics undergraduate lecture course on electronic circuits. Its use of clear language and many real-world examples make it an especially accessible book for students unfamiliar or unsure about the subject matter.

This book is on applied superconductivity, which is one of the topical issues of modern science and technology. At present, the prospects for the practical application of superconductivity are obvious from both economic and practical points of view. It can reduce heat losses and reduce the weight and size of equipment, improve the reliability of electrical devices and power systems, and create new devices. As a result, the achievements of applied superconductivity make it possible to perform effective retrofitting of equipment for scientific research, in medicine, electric power, electrical engineering, transport, and to introduce new advanced technologies that provide higher efficiency, significantly reducing working costs.

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed.

"Complete dependence on semiconductor vendors' application notes and data sheets is now a thing of the past thanks to this all-in-one comparison text on nonvolatile semiconductor memory (NVSM) technology. Working electronics engineers can now refer to this book to access the technical data and applications-focused perspective they need to make intelligent decisions regarding the selection, specification, procurement, and application of NVSM devices.
The most comprehensive book in the field, NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY gathers expertly-written information scattered throughout device literature in a single, well-balanced volume. This book features an in-depth overview accompanied by applications-oriented chapters on device reliability and endurance, radiation tolerance, as well as device physics and design. It is an essential reference for electronics engineers."
Sponsored by:
IEEE Components, Packaging, and Manufacturing Technology Society, IEEE Solid-State Circuits Council/Society.

Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Nanometer scale physics is progressing rapidly: the top-down approach of semiconductor technology will soon encounter the scale of the bottom-up approaches of supramolecular chemistry and spatially localized excitations in ionic crystals. Advances in this area have already led to applications in optoelectronics. More may be expected.

This book deals with the role of structure confinement in the spectroscopic characteristics of physical systems. It examines the fabrication, measurement and understanding of the relevant structures. It reports progress in the theory and in experimental techniques, starting with the consideration of fundamental principles and leading to the frontiers of research. The subjects dealt with include such spatially resolved structures as quantum wells, quantum wires, quantum dots, and luminescence, in both theoretical and practical terms.

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" Materials Today "... well written, with clear, lucid explanations ..." Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This book covers all known information about phase relations in multinary systems based on III-V semiconductors, providing the first systematic account of phase equilibria in multinary systems based on III-V semiconductors and making research originally published in Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists. Features: Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases