This book is about the work of 10 great scientists; who they were and are, their personal background and how they achieved their outstanding results and took their prominent place in science history. We follow one of physics and science history's most enigmatic phenomena, superconductivity, through 100 years, from its discovery in 1911 to the present, not as a history book in the usual sense, but through close ups of the leading characters and their role in that story, the Nobel laureates, who were still among us in the years 2001-2004 when the main round of interviews was carried out. Since then two of them already passed away. For each one of the 10 laureates, the author tells their story by direct quotation from interviews in their own words. Each chapter treats one laureate. The author first gives a brief account of the laureates' scientific background and main contribution. Then each laureate tells his own story in his own words. This book is unique in its approach to science history.

This book introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy that are essential to determine microscopic defect structures. Many different magnetic resonance methods are required for investigating the microscopic and electronic properties of solids and uncovering correlations between those properties. In addition to EPR, such methods include electron nuclear double resonance (ENDOR), electronically and optically detected EPR (also known as ODENDOR), and electronically and optically detected ENDOR. This book comprehensively discusses experimental, technological, and theoretical aspects of these techniques from a practical point of view, with examples of semiconductors and insulators. While the non-specialist learns about the potential of the different methods, the researcher finds help in the application of commercial apparatus and guidance from ab initio theory for deriving structure models from data.

This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas and lattices of dielectric resonators is discussed.

How much knowledge can we gain about a physical system and to what degree can we control it? In quantum optical systems, such as ion traps or neutral atoms in cavities, single particles and their correlations can now be probed in a way that is fundamentally limited only by the laws of quantum mechanics. In contrast, quantum many-body systems pose entirely new challenges due to the enormous number of microscopic parameters and their small length- and short time-scales.
This thesis describes a new approach to probing quantum many-body systems at the level of individual particles: Using high-resolution, single-particle-resolved imaging and manipulation of strongly correlated atoms, single atoms can be detected and manipulated due to the large length and time-scales and the precise control of internal degrees of freedom. Such techniques lay stepping stones for the experimental exploration of new quantum many-body phenomena and applications thereof, such as quantum simulation and quantum information, through the design of systems at the microscopic scale and the measurement of previously inaccessible observables.

Lead-free solders are used extensively as interconnection materials in electronic assemblies and play a critical role in the global semiconductor packaging and electronics manufacturing industry. Electronic products such as smart phones, notebooks and high performance computers rely on lead-free solder joints to connect IC chip components to printed circuit boards." Lead Free Solder: Mechanics and Reliability" provides in-depth design knowledge on lead-free solder elastic-plastic-creep and strain-rate dependent deformation behavior and its application in failure assessment of solder joint reliability. It includes coverage of advanced mechanics of materials theory and experiments, mechanical properties of solder and solder joint specimens, constitutive models for solder deformation behavior; numerical modeling and simulation of solder joint failure subject to thermal cycling, mechanical bending fatigue, vibration fatigue and board-level drop impact tests.

This book traces the quest to use nanostructured media for novel and improved optoelectronic devices. Starting with the invention of the heterostructure laser, the progression via thin films to quasi zero-dimensional quantum dots has led to novel device concepts and tremendous improvements in device performance. Along the way sophisticated methods of material preparation and characterization have been developed. Novel physical phenomena have emerged and are now used in devices such as lasers and optical amplifiers. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, the first of its kind on topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field.
This book is intended for researchers and graduate students working in the field of topological insulators and related areas.
Shun-Qing Shen is a Professor at the Department of Physics, the University of Hong Kong, China.

This thesis explores thermal transport in selected rare-earth-based intermetallic compounds to answer questions of great current interest. It also sheds light on the interplay of Kondo physics and Fermi surface changes. By performing thermal conductivity and electrical resistivity measurements at temperatures as low as 25mK, the author demonstrates that the Wiedemann-Franz law, a cornerstone of metal physics, is violated at precisely the magnetic-field-induced quantum critical point of the heavy-fermion metal YbRh2Si2. This first-ever observation of a violation has dramatic consequences, as it implies a breakdown of the quasiparticle picture. Utilizing an innovative technique to measure low-temperature thermal transport isothermally as a function of the magnetic field, the thesis interprets specific, partly newly discovered, high-field transitions in CeRu2Si2 and YbRh2Si2 as Lifshitz transitions related to a change in the Fermi surface. Lastly, by applying this new technique to thermal conductivity measurements of the skutterudite superconductor LaPt4Ge12, the thesis proves that the system is a conventional superconductor with a single energy gap. Thus, it refutes the widespread speculations about unconventional Cooper pairing in this material.

This book covers high-transition temperature (Tc) s-wave superconductivity and the neighboring Mott insulating phase in alkali-doped fullerides. The author presents (1) a unified theoretical description of the phase diagram and (2) a nonempirical calculation of Tc. For these purposes, the author employs an extension of the DFT+DMFT (density-functional theory + dynamical mean-field theory). He constructs a realistic electron-phonon-coupled Hamiltonian with a newly formulated downfolding method. The Hamiltonian is analyzed by means of the extended DMFT. A notable aspect of the approach is that it requires only the crystal structure as a priori knowledge. Remarkably, the nonempirical calculation achieves for the first time a quantitative reproduction of the experimental phase diagram including the superconductivity and the Mott phase. The calculated Tc agrees well with the experimental data, with the difference within 10 K. The book provides details of the computational scheme, which can also be applied to other superconductors and other phonon-related topics. The author clearly describes a superconducting mechanism where the Coulomb and electron -phonon interactions show an unusual cooperation in the superconductivity thanks to the Jahn-Teller nature of the phonons.

CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. * Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; * Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; * Provides both theoretical analysis and practical examples to illustrate design methodologies; * Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.

This book reviews the current state-of-the art of single layer silicene up to thicker silicon nanosheets, and their structure, properties and potential applications. Silicene is a newly discovered material that is one atomic layer think. It is a two-dimensional (2D) nanomaterial that is classified as a nanosheet, which has large lateral dimensions up to micrometres, but thicknesses of only nanometres or less. Silicon nanosheets are currently a very 'hot' area of research. The unique properties and morphology of such materials make them ideal for a variety of applications, including electronic devices, batteries and sensors. 2D nanosheets of silicon can be considered as analogues of graphene. As silicon is already the major component of electronic devices, the significance of nanosheets composed of silicon is that they can be more easily integrated into existing electronic devices. Furthermore, if 2D nanostructured Si can be implemented into such devices, then their size could be reduced into the nano-regime, providing unique properties different from bulk Si that is currently employed. The book is written for researchers and graduate students.

"Integrated 60GHz RF Beamforming in CMOS "describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters with other key building blocks such as low noise amplifiers and power amplifiers are described in detail. Finally, this book describes the integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package.

This book discusses the development of Fano-based techniques and reveals the characteristic properties of various wave processes by studying interference phenomena. It explains that the interaction of discrete (localized) states with a continuum of propagation modes leads to Fano interference effects in transmission, and explores novel coherent effects such as bound states in the continuum accompanied by collapse of Fano resonance. Originating in atomic physics, Fano resonances have become one of the most appealing phenomena of wave scattering in optics, microwaves, and terahertz techniques. The generation of extremely strong and confined fields at a deep subwavelength scale, far beyond the diffraction limit, plays a central role in modern plasmonics, magnonics, and in photonic and metamaterial structures. Fano resonance effects take advantage of the coupling of these bound states with a continuum of radiative electromagnetic waves. With their unique physical properties and unusual combination of classical and quantum structures, Fano resonances have an application potential in a wide range of fields, from telecommunication to ultrasensitive biosensing, medical instrumentation and data storage. Including contributions by international experts and covering the essential aspects of Fano-resonance effects, including theory, modeling and design, proven and potential applications in practical devices, fabrication, characterization and measurement, this book enables readers to acquire the multifaceted understanding required for these multidisciplinary challenges.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes. The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions. Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

This book explores the conversion for solar energy into renewable liquid fuels through electrochemical reactions. The first section of the book is devoted to the theoretical fundamentals of solar fuels production, focusing on the surface properties of semiconductor materials in contact with aqueous solutions and the reaction mechanisms. The second section describes a collection of current, relevant characterization techniques, which provide essential information of the band structure of the semiconductors and carrier dynamics at the interface semiconductor. The third, and last section comprises the most recent developments in materials and engineered structures to optimize the performance of solar-to-fuel conversion devices.

This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.

Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book will be of interest to those actively engaged in gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers.
Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.)
For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out.
The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.