Bringing Scanning Probe Microscopy Up to Speed introduces the principles of scanning probe systems with particular emphasis on techniques for increasing speed. The authors include useful information on the characteristics and limitations of current state-of-the-art machines as well as the properties of the systems that will follow in the future. The basic approach is two-fold. First, fast scanning systems for single probes are treated and, second, systems with multiple probes operating in parallel are presented. The key components of the SPM are the mechanical microcantilever with integrated tip and the systems used to measure its deflection. In essence, the entire apparatus is devoted to moving the tip over a surface with a well-controlled force. The mechanical response of the actuator that governs the force is of the utmost importance since it determines the scanning speed. The mechanical response relates directly to the size of the actuator; smaller is faster. Traditional scanning probe microscopes rely on piezoelectric tubes of centimeter size to move the probe. In future scanning probe systems, the large actuators will be replaced with cantilevers where the actuators are integrated on the beam. These will be combined in arrays of multiple cantilevers with MEMS as the key technology for the fabrication process.

Kalia and Fu's novel monograph covers cryogenic treatment, properties and applications of cryo-treated polymer materials. Written by numerous international experts, the twelve chapters in this book offer the reader a comprehensive picture of the latest findings and developments, as well as an outlook on the field. Cryogenic technology has seen remarkable progress in the past few years and especially cryogenic properties of polymers are attracting attention through new breakthroughs in space, superconducting, magnetic and electronic techniques. This book is a valuable resource for researchers, educators, engineers and graduate students in the field and at technical institutions.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

This book reviews progress towards quantum simulators based on photonic and hybrid light-matter systems, covering theoretical proposals and recent experimental work. Quantum simulators are specially designed quantum computers. Their main aim is to simulate and understand complex and inaccessible quantum many-body phenomena found or predicted in condensed matter physics, materials science and exotic quantum field theories. Applications will include the engineering of smart materials, robust optical or electronic circuits, deciphering quantum chemistry and even the design of drugs. Technological developments in the fields of interfacing light and matter, especially in many-body quantum optics, have motivated recent proposals for quantum simulators based on strongly correlated photons and polaritons generated in hybrid light-matter systems. The latter have complementary strengths to cold atom and ion based simulators and they can probe for example out of equilibrium phenomena in a natural driven-dissipative setting. This book covers some of the most important works in this area reviewing the proposal for Mott transitions and Luttinger liquid physics with light, to simulating interacting relativistic theories, topological insulators and gauge field physics. The stage of the field now is at a point where on top of the numerous theory proposals; experiments are also reported. Connecting to the theory proposals presented in the chapters, the main experimental quantum technology platforms developed from groups worldwide to realize photonic and polaritonic simulators in the laboratory are also discussed. These include coupled microwave resonator arrays in superconducting circuits, semiconductor based polariton systems, and integrated quantum photonic chips. This is the first book dedicated to photonic approaches to quantum simulation, reviewing the fundamentals for the researcher new to the field, and providing a complete reference for the graduate student starting or already undergoing PhD studies in this area.

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials.

At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale.

With the Sixth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.

Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed.
Features:
-Fault primitive based analysis of memory faults,
-A complete framework of and classification memory faults,
-A systematic way to develop optimal and high quality memory test algorithms,
-A systematic way to develop test patterns for any multi-port SRAM,
-Challenges and trends in embedded memory testing.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

This book is devoted to logic synthesis and design techniques for asynchronous circuits. It uses the mathematical theory of Petri Nets and asynchronous automata to develop practical algorithms implemented in a public domain CAD tool. Asynchronous circuits have so far been designed mostly by hand, and are thus much less common than their synchronous counterparts, which have enjoyed a high level of design automation since the mid-1970s. Asynchronous circuits, on the other hand, can be very useful to tackle clock distribution, modularity, power dissipation and electro-magnetic interference in digital integrated circuits. This book provides the foundation needed for CAD-assisted design of such circuits, and can also be used as the basis for a graduate course on logic design.

The first edition of this book provided an introduction to the many static and dynamic features of magnetic flux structures in what are now called classical or low-temperature superconductors. It went out of print not long after the discovery of high-temperature superconductors in 1986 by J.G. Bednorz and K.A. Miiller, a discovery which resulted worldwide in an explosive growth of research and development in the field of superconductivity. Because of this upsurge of activities, a strong demand for this book clearly continued. Since the contents of the fourteen chapters of the first edition are still valid and continue to represent a useful introduction into the various subjects, it was felt that a reprinting of these chapters in this second edition would be highly attractive. In this way, the reader is also able to trace the earlier scienti fic developments, themselves constituting important ideas sometimes forgot ten by the new community dealing with high-temperature superconductivity. However, because of the exciting and important recent progress in the field of high-temperature superconductivity, an extensive chapter has been added in this second edition. It provides a summary of the new developments and a discussion of the highlights. Here keywords such as vortex matter, vortex imaging, and half-integer magnetic flux quanta describe surprising new issues."

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary blocks" are Cooper pair and fluxon (vortex). This book presents new ways how to modify superconductivity and vortex matter through nanostructuring and the use of nanoscale magnetic templates. The basic nano-effects, vortex and vortex-antivortex patterns, vortex dynamics, Josephson phenomena, critical currents, and interplay between superconductivity and ferromagnetism at the nanoscale are discussed. Potential applications of nanostructured superconductors are also presented in the book.

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering."

The photorefractive effect is now firmly established as one of the highest-sensitivity nonlinear optical effects, making it an attractive choice for use in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefractive materials. The last ten years have seen an upsurge of interest in photorefractive applications because of several advances in the synthesis and growth of new and sensitive materials. This book is a collection of many of the most important recent developments in photorefractive effects and materials. The introductory chapter, which provides the necessary tools for understanding a wide variety of photorefractive phenomena, is followed by seven contributed chapters that offer views of the state-of-the-art in several different material systems. The second chapter represents the most detailed study to date on the growth and photorefractive performance of BaTi03, one of the most important photorefractive ferroelectrlcs. The third chapter describes the process of permanently fixing holographic gratings in ferroelectrics, important for volumetric data storage with ultra-high data densities. The fourth chapter describes the discovery and theory of photorefractive spatial solitons. Photorefractive polymers are an exciting new class of photo refractive materials, described in the fifth chapter. Polymers have many advantages, primarily related to fabrication, that could promise a breakthrough to the marketplace because of ease and low-cost of manufacturing.

These volumes contain the edited documents presented at the NATO-Sponsored Advanced Research Workshop (ARW) on Partial Pre8tre88ing, from Theory to Practice, held at the CEBTP Research Centre of Saint-Remy-Ies-Chevreuse, France, June 18-22, 1984. The workshop was a direct extension of the International Symposium on Nonlinearity and Continuity in Pre8tre88ed Concrete, organized by the editor at the University of Waterloo, Waterloo, Canada, July 4-6, 1983. The organization of the NATO-ARW on Partial Prestressing was prompted by the need to explain and reduce the wide dirrerences of expert oph: iipn. on the subject, which make more difficult the accep tance of partial prestressing by the profession at large. Specifically, the workshop attempted to: - produce a more unified picture of partial presetressing, by con fronting and, where possible, reconciling some conflicting American and European views on this subject; - bring theoretical advances on partial prestressing within the grasp of engineering practice; - provide the required background for developing some guidelines on the use of partial prestressing, in agreement with existing structural concrete standards. The five themes selected for the workshop agenda were: (1) Problems of Partially Prestressed Concrete (PPC). (2) Partially Prestressed Concrete Members: Static Loading. (3) PPC Members: Repeated and Dynamic Loadings. (4) Continuity in Partially Prestressed Concrete. (5) Practice of Partial Prestressing."

The field of solid state ionics is multidisciplinary in nature. Chemists, physicists, electrochimists, and engineers all are involved in the research and development of materials, techniques, and theoretical approaches. This science is one of the great triumphs of the second part of the 20th century. For nearly a century, development of materials for solid-state ionic technology has been restricted. During the last two decades there have been remarkable advances: more materials were discovered, modem technologies were used for characterization and optimization of ionic conduction in solids, trial and error approaches were deserted for defined predictions. During the same period fundamental theories for ion conduction in solids appeared. The large explosion of solid-state ionic material science may be considered to be due to two other influences. The first aspect is related to economy and connected with energy production, storage, and utilization. There are basic problems in industrialized countries from the economical, environmental, political, and technological points of view. The possibility of storing a large amount of utilizable energy in a comparatively small volume would make a number of non-conventional intermittent energy sources of practical convenience and cost. The second aspect is related to huge increase in international relationships between researchers and exchanges of results make considerable progress between scientists; one find many institutes joined in common search programs such as the material science networks organized by EEC in the European countries.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials,andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables,space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junctions.