"Integrated 60GHz RF Beamforming in CMOS "describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters with other key building blocks such as low noise amplifiers and power amplifiers are described in detail. Finally, this book describes the integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes. The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions. Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

This book explores the conversion for solar energy into renewable liquid fuels through electrochemical reactions. The first section of the book is devoted to the theoretical fundamentals of solar fuels production, focusing on the surface properties of semiconductor materials in contact with aqueous solutions and the reaction mechanisms. The second section describes a collection of current, relevant characterization techniques, which provide essential information of the band structure of the semiconductors and carrier dynamics at the interface semiconductor. The third, and last section comprises the most recent developments in materials and engineered structures to optimize the performance of solar-to-fuel conversion devices.

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

This thesis presents results crucial to the emerging field of indirect excitons. These specially designed quasiparticles give the unique opportunity to study fundamental properties of quantum degenerate Bose gases in semiconductors. Furthermore, indirect excitons allow for the creation of novel optoelectronic devices where excitons are used in place of electrons. Excitonic devices are explored for the development of advanced signal processing seamlessly coupled with optical communication. The thesis presents and describes the author's imaging experiments that led to the discovery of spin transport of excitons. The many firsts presented herein include the first studies of an excitonic conveyer, leading to the discovery of the dynamical localization-delocalization transition for excitons, and the first excitonic ramp and excitonic diode with no energy-dissipating voltage gradient.

This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.

Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book will be of interest to those actively engaged in gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.

This book provides a comprehensive and up-to-date description of the Josephson effect, a topic of never-ending interest in both fundamental and applied physics. In this volume, world-renowned experts present the unique aspects of the physics of the Josephson effect, resulting from the use of new materials, of hybrid architectures and from the possibility of realizing nanoscale junctions. These new experimental capabilities lead to systems where novel coherent phenomena and transport processes emerge. All this is of great relevance and impact, especially when combined with the didactic approach of the book. The reader will benefit from a general and modern view of coherent phenomena in weakly-coupled superconductors on a macroscopic scale. Topics that have been only recently discussed in specialized papers and in short reviews are described here for the first time and organized in a general framework. An important section of the book is also devoted to applications, with focus on long-term, future applications. In addition to a significant number of illustrations, the book includes numerous tables for comparative studies on technical aspects.

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

The exponential growth of the number of internet nodes has suddenly created a widespread demand for high-speed optical and electronic devices, circuits, and systems. The new optical revolution has replaced modular, general-purpose building blocks by end-to-end solutions. Greater levels of integration on a single chip enable higher performance and lower cost. The mainstream VLSI technologies such as BiCmos and CMOS continue to take over the territories thus far claimed by GaAs and InP devices. This calls for an up-to-date book describing the design of high-speed electronic circuits for optical communication using modern techniques in a low-cost CMOS process. High-Speed CMOS Circuits for Optical Receivers covers the design of the world's first and second 10 Gb/s clock and data recovery circuits fabricated in a pure CMOS process. The second prototype meets some of the critical requirements recommended by the SONET OC-192 standard. The clock and data recovery circuits consume a power several times lower than in prototypes built in other fabrication processes. High-Speed CMOS Circuits for Optical Receivers describes novel techniques for implementation of such high-speed, high-performance circuits in a pure CMOS process. High-Speed CMOS Circuits for Optical Receivers is written for researchers and students interested in high-speed and mixed-mode circuit design with focus on CMOS circuit techniques. Designers working on various high-speed circuit projects for data communication, including optical com., giga bit ethernet will also find it of interest.

Neutron stars are the most compact astronomical objects in the universe which are accessible by direct observation. Studying neutron stars means studying physics in regimes unattainable in any terrestrial laboratory.

Understanding their observed complex phenomena requires a wide range of scientific disciplines, including the nuclear and condensed matter physics of very dense matter in neutron star interiors, plasma physics and quantum electrodynamics of magnetospheres, and the relativistic magneto-hydrodynamics of electron-positron pulsar winds interacting with some ambient medium. Not to mention the test bed neutron stars provide for general relativity theories, and their importance as potential sources of gravitational waves. It is this variety of disciplines which, among others, makes neutron star research so fascinating, not only for those who have been working in the field for many years but also for students and young scientists.

The aim of this book is to serve as a reference work which not only reviews the progress made since the early days of pulsar astronomy, but especially focuses on questions such as: "What have we learned about the subject and how did we learn it?," "What are the most important open questions in this area?" and "What new tools, telescopes, observations, and calculations are needed to answer these questions?."

All authors who have contributed to this book have devoted a significant part of their scientific careers to exploring the nature of neutron stars and understanding pulsars. Everyone has paid special attention to writing educational comprehensive review articles with the needs of beginners, students and young scientists as potential readers in mind. This book will be a valuable source of information for these groups.

Advances in the semiconductor technology have enabled steady, exponential im- provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni- tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result- ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de- termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore- flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon- nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications.
This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction.
Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.

This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts. Content Level Research

The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.

The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium."

This thesis addresses the problem of improving the alignment of carbon nanotubes (CNTs) in transistor applications, taking a unique approach using iptycenes acting as molecular tweezers in combination with a liquid crystal solvent. As part of a project to test the effectiveness of a multi-step method, the so-called Alignment Relay Technique (ART), this work contributed evidence for the selectivity and stability of ART, as well as providing the first proof-of-concept that ART can be used to create CNT field-effect transistors (FETs). The thesis effectively explains and illustrates the chemical synthesis of the tweezers, the concept and actualization of the technique, the various factors observed to influence deposition and selectivity, along with material fabrication using both photolithography and electron beam lithography. This research advances knowledge of transistors and expands the applications of small organic molecules in the field of materials science. Particular highlights of this thesis include: an extensive review of ART, its advantages, and limitations; development of new material chemistry methods for the optimization of semiconducting CNT selectivity; and a comprehensive exploration of fabrication and characterization of CNTFETs for future applications.

The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.

This book presents selected peer-reviewed contributions from the 2019 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2019 (Hanoi, Vietnam, 7-10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical-mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

This book systematically describes free-standing films and self-supporting nanoarrays growing on rigid and flexible substrates, and discusses the numerous applications in electronics, energy generation and storage in detail. The chapters present the various fabrication techniques used for growing self-supporting materials on flexible and rigid substrates, and free-standing films composed of semiconductors, inorganic, polymer and carbon hybrid materials.

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding ofmeasurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.

The discovery by J. G. Bednorz and K. A. Mtllier in 1986 that the superconducting state can exist in oxides at temperatures above 30 K stimulated research in the field of superconductivity and opened up a new field of research. Within a few years a large number of cuprate superconductors with transition temperatures well above the boiling point of liquid nitrogen have been found. The possibility of using liquid nitrogen as coolant re-stimulated interest in power applications of supercon ductivity. In this book an overview of the known high-Te superconductors and their physical properties is presented. Aspects related to conductor fabrication and high-current applications are emphasised. The material should be suitable for use in graduate level courses on superconductivity. Researchers in the field may profit from the large number of tables and references describing its status at the end of 1997. An introduction to high-To superconductivity must be based on the fundamental physical principles of normal-state electrical conductivity and the well-known characteristics of conventional superconductors. In Chapter 2 this background is provided. Crystal structures, anisotropic properties and general trends of the critical temperatures of the cuprate superconductors are described in Chapters 3 and 4. The processing of superconductor powders addressed in Chapter 5 affects considerably the current-carrying capacity of high-T. wires. In Chapter 6 several fabrication techniques for superconducting wires are described. In addition, the factors limiting the transport critical currents ofhigh-Te wires are discussed."

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.