Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging). Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications. Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles. Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles. Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.

Focusing on the physical properties of diamond and sapphire, this monograph provides readers with essential details on crystal structure and growth, mechanical properties, thermal properties, optical properties, light scattering of diamond and sapphire crystals, and sapphire lasers. Various physical properties are comprehensively discussed: Mechanical properties include hardness, tensile strength, compressive strength, and Young's modulus. Thermal properties include thermal expansion, specific heat, and thermal conductivity. Optical properties of diamond and sapphire include transmission, refractive index, and absorption. Light scattering includes Raman scattering and Brillouin scattering. Sapphire lasers include chromium-doped and titanium-doped lasers. Aimed at researchers and industry professionals working in materials science, physics, electrical engineering, and related fields, this monograph is the first to concentrate solely on physical properties of these increasingly important materials.

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories-static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This book introduces the reader to a number of challenges for the operation of electronic devices in various harsh environmental conditions. While some chapters focus on measuring and understanding the effects of these environments on electronic components, many also propose design solutions, whether in choice of material, innovative structures, or strategies for amelioration and repair. Many applications need electronics designed to operate in harsh environments. Readers will find, in this collection of topics, tools and ideas useful in their own pursuits and of interest to their intellectual curiosity. With a focus on radiation, operating conditions, sensor systems, package, and system design, the book is divided into three parts. The first part deals with sensing devices designed for operating in the presence of radiation, commercials of the shelf (COTS) products for space computing, and influences of single event upset. The second covers system and package design for harsh operating conditions. The third presents devices for biomedical applications under moisture and temperature loads in the frame of sensor systems and operating conditions.

Doped by isovalent or heterovalent foreign impurities, II-VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II-VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II-VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases. The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical-chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison. This book provides invaluable data for technologists and researchers involved in developing and manufacturing II-VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering. Check out the companion books: Ternary Alloys Based on II-VI Semiconductor Compounds and

This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

Recent advances in semiconductor technology offer vertical interconnect access (via) that extend through silicon, popularly known as through silicon via (TSV). This book provides a comprehensive review of the theory behind TSVs while covering most recent advancements in materials, models and designs. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for Cu, carbon nanotube (CNT) and graphene nanoribbon (GNR) based TSVs are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR based TSVs are also discussed.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Theory of Superconductivity: From Weak to Strong Coupling leads the reader from basic principles through detailed derivations and a description of the many interesting phenomena in conventional and high-temperature superconductors. The book describes physical properties of novel superconductors, in particular, the normal state, superconducting critical temperatures and critical fields, isotope effects, normal and superconducting gaps, tunneling, angle-resolved photoemission, stripes, and symmetries. The book divides naturally into two parts. Part I introduces the phenomenology of superconductivity, the microscopic BCS theory, and its extension to the intermediate coupling regime. The first three chapters of this part cover generally accepted themes in the conventional theory of superconductivity and serve as a good introduction to the subject. Chapter 4 describes what happens to the conventional theory when the coupling between electrons becomes strong. Part II describes key physical properties of high-temperature superconductors and their theoretical interpretation. Alternative viewpoints are discussed, but the emphasis is placed on the bipolaron theory.

Drawn from the author's introductory course at the University of Orsay, Superconductivity of Metals and Alloys is intended to explain the basic knowledge of superconductivity for both experimentalists and theoreticians. These notes begin with an elementary discussion of magnetic properties of Type I and Type II superconductors. The microscopic theory is then built up in the Bogolubov language of self-consistent fields. This text provides the classic, fundamental basis for any work in the field of superconductivity.

High-temperature superconductors are one of the most active and exciting areas of condensed matter physics research. From high-quality thin-films to friction-less transportation, their applications in industries such as telecommunications, environment and geology, medicine, nuclear physics, and security are just the beginning. The Rise of the Superconductors is an ideological chronology of the science that has produced superconductors. Beginning with the first liquefaction of helium, the book presents the discovery of the Meissner effect and the development of type II superconductors before discussing the impact of Bednorz and Muller's Nobel prize-winning research in high temperature ceramic superconductors. Authors seamlessly introduce the rise of Tc materials, whose layer-like nature, anisotropic behavior, and other properties are discussed in Chapter 4. The next chapter is devoted to the discovery, development, and characteristics of organic superconductors, particularly in fullerene materials, whose discovery earned the Nobel Prize in Chemistry in 1996. The authors then examine the properties and theoretical developments explaining the behavior of simple superconductors, highlighting their impact on theoretical physics. Subsequent chapters analyze the technological advances, production challenges, and future directions of large- and small-scale applications, Josephson effects, the development of SQUID technology, and the specific behavior of high temperature superconductors. The Rise of the Superconductors concludes with a brief look at the struggle for technical superiority between the U.S. and Japan, European contributions, and commentary on the current state of the art.

Organic Light Emitting Diodes: Principles, Characteristics, and Processes presents recent developments in organic electroluminescence and their application to light emitting diodes. In six chapters and complete with an extensive set of references, it describes and illustrates the physical principles of organic LEDs and their electrical and optical characteristics with a wide range of examples and practical studies. The author presents a unified approach to the description and functioning of organic LEDs, based on a comprehensive background of relevant physical processes and provides a clear foundation for the prediction and design of new improved electroluminescent devices.

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

During the last few years cavity-optomechanics has emerged as a new field of research. This highly interdisciplinary field studies the interaction between micro and nano mechanical systems and light. Possible applications range from novel high-bandwidth mechanical sensing devices through the generation of squeezed optical or mechanical states to even tests of quantum theory itself. This is one of the first books in this relatively young field. It is aimed at scientists, engineers and students who want to obtain a concise introduction to the state of the art in the field of cavity optomechanics. It is valuable to researchers in nano science, quantum optics, quantum information, gravitational wave detection and other cutting edge fields. Possible applications include biological sensing, frequency comb applications, silicon photonics etc. The technical content will be accessible to those who have familiarity with basic undergraduate physics.

Providing insider viewpoints and perspectives unavailable in any other text, this book presents useful guidelines and tools to produce effective coatings and films. Covering subjects ranging from materials selection and process development to successful system construction and optimization, it contains expanded discussions on design visualization, dense wavelength division multiplexing, new coating equipment, electrochromic and chemically active coatings, ion-assisted deposition, and optical monitoring sensitivity. Furnishing real-world examples and know-how, the book introduces Fourier analysis and synthesis without difficult mathematical concepts and equations.

Contents:
1. HgCdTe Growth and Detector Technology 2. Blue-Green Semconductor Lasers 3. Molecular Beam Epitaxy of Widegap II-VI Compounds 4. Optical Properties and Electronic Structure of Wide-Gap II_VI Semiconductors 5. Nonlinear Optics and Propagation of Excitons 6. Beryllium Containing II_VI Compounds 7. II_VI Materials for Visible Light Emitters 8. Spin Engineering in II_VI Magnetic Semiconductor Heterostructures 9. Self-Orgamized, Low-Dimensional II_VI Nanostructures

The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.