This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum.

This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.

This book studies the dynamics of fundamental collective excitations in quantum materials, focusing on the use of state-of-the-art ultrafast broadband optical spectroscopy. Collective behaviour in solids lies at the origin of several cooperative phenomena that can lead to profound transformations, instabilities and phase transitions. Revealing the dynamics of collective excitations is a topic of pivotal importance in contemporary condensed matter physics, as it provides information on the strength and spatial distribution of interactions and correlation. The experimental framework explored in this book relies on setting a material out-of-equilibrium by an ultrashort laser pulse and monitoring the photo-induced changes in its optical properties over a broad spectral region in the visible or deep-ultraviolet. Collective excitations (e.g. plasmons, excitons, phonons...) emerge either in the frequency domain as spectral features across the probed range, or in the time domain as coherent modes triggered by the pump pulse. Mapping the temporal evolution of these collective excitations provides access to the hierarchy of low-energy phenomena occurring in the solid during its path towards thermodynamic equilibrium. This methodology is used to investigate a number of strongly interacting and correlated materials with an increasing degree of internal complexity beyond conventional band theory.

This is the first book that can be considered a textbook on thin film science, complete with exercises at the end of each chapter. Ohring has contributed many highly regarded reference books to the AP list, including Reliability and Failure of Electronic Materials and the Engineering Science of Thin Films. The knowledge base is intended for science and engineering students in advanced undergraduate or first-year graduate level courses on thin films and scientists and engineers who are entering or require an overview of the field.
Since 1992, when the book was first published, the field of thin films has expanded tremendously, especially with regard to technological applications. The second edition will bring the book up-to-date with regard to these advances. Most chapters have been greatly updated, and several new chapters have been added.

This book discusses the new roles that the VLSI (very-large-scale integration of semiconductor circuits) is taking for the safe, secure, and dependable design and operation of electronic systems. The book consists of three parts. Part I, as a general introduction to this vital topic, describes how electronic systems are designed and tested with particular emphasis on dependability engineering, where the simultaneous assessment of the detrimental outcome of failures and cost of their containment is made. This section also describes the related research project "Dependable VLSI Systems," in which the editor and authors of the book were involved for 8 years. Part II addresses various threats to the dependability of VLSIs as key systems components, including time-dependent degradations, variations in device characteristics, ionizing radiation, electromagnetic interference, design errors, and tampering, with discussion of technologies to counter those threats. Part III elaborates on the design and test technologies for dependability in such applications as control of robots and vehicles, data processing, and storage in a cloud environment and heterogeneous wireless telecommunications. This book is intended to be used as a reference for engineers who work on the design and testing of VLSI systems with particular attention to dependability. It can be used as a textbook in graduate courses as well. Readers interested in dependable systems from social and industrial-economic perspectives will also benefit from the discussions in this book.

This book explores emerging topics in atomic- and nano-scale electronics after the era of Moore's Law, covering both the physical principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics beyond traditional complementary metal-oxide semiconductors (CMOS). Moore's law is not a physical law itself, but rather a visionary prediction that has worked well for more than 50 years but is rapidly coming to its end as the gate length of CMOS transistors approaches the length-scale of only a few atoms. Thus, the key question here is: "What is the future for nanoelectronics beyond CMOS?" The possible answers are found in this book. Introducing novel quantum devices such as atomic-scale electronic devices, ballistic devices, memristors, superconducting devices, this book also presents the reader with the physical principles underlying new ways of computing, as well as their practical implementation. Topics such as quantum computing, neuromorphic computing are highlighted here as some of the most promising candidates for ushering in a new era of atomic-scale electronics beyond CMOS.

This book addresses problems in three main developments in modern condensed matter physics- namely topological superconductivity, many-body localization and strongly interacting condensates/superfluids-by employing fruitful analogies from classical mechanics. This strategy has led to tangible results, firstly in superconducting nanowires: the density of states, a smoking gun for the long sought Majorana zero mode is calculated effortlessly by mapping the problem to a textbook-level classical point particle problem. Secondly, in localization theory even the simplest toy models that exhibit many-body localization are mathematically cumbersome and results rely on simulations that are limited by computational power. In this book an alternative viewpoint is developed by describing many-body localization in terms of quantum rotors that have incommensurate rotation frequencies, an exactly solvable system. Finally, the fluctuations in a strongly interacting Bose condensate and superfluid, a notoriously difficult system to analyze from first principles, are shown to mimic stochastic fluctuations of space-time due to quantum fields. This analogy not only allows for the computation of physical properties of the fluctuations in an elegant way, it sheds light on the nature of space-time. The book will be a valuable contribution for its unifying style that illuminates conceptually challenging developments in condensed matter physics and its use of elegant mathematical models in addition to producing new and concrete results.

This book discusses physical design and mask synthesis of directed self-assembly lithography (DSAL). It covers the basic background of DSAL technology, physical design optimizations such as placement and redundant via insertion, and DSAL mask synthesis as well as its verification. Directed self-assembly lithography (DSAL) is a highly promising patterning solution in sub-7nm technology.

This book focuses on the microscopic understanding of the function of organic semiconductors. By tracing the link between their morphological structure and electronic properties across multiple scales, it represents an important advance in this direction. Organic semiconductors are materials at the interface between hard and soft matter: they combine structural variability, processibility and mechanical flexibility with the ability to efficiently transport charge and energy. This unique set of properties makes them a promising class of materials for electronic devices, including organic solar cells and light-emitting diodes. Understanding their function at the microscopic scale - the goal of this work - is a prerequisite for the rational design and optimization of the underlying materials. Based on new multiscale simulation protocols, the book studies the complex interplay between molecular architecture, supramolecular organization and electronic structure in order to reveal why some materials perform well - and why others do not. In particular, by examining the long-range effects that interrelate microscopic states and mesoscopic structure in these materials, the book provides qualitative and quantitative insights into e.g. the charge-generation process, which also serve as a basis for new optimization strategies.

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetime white LEDs are under development with the potential to replace incandescent bulbs in many situations.

WIDE BANDGAP SEMICONDUCTORS provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical explanations of key processes such as laser diodes, LEDs and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques, and more...

The volume also explores the potential use of these semiconductors in HDTV, power conditioning devices, and high power microwave applications. The contributors are all experts in the fields of growth, processing, and characterization of these semiconductors, including II-VI compounds, processing techniques for SiC, GaN and diamond, and materials analysis of all wide gap semiconductors.

Key Features:

- Explains the development and advantages of broadgap semiconductors, showing their increasing power and their increasingly broader use in commercial and military products

- Features step-by-step explanations of key processes in the fabrication of the semiconductors, including chemistry, testing, design, and more

- Explores the need for advanced electronics capable of operation at 6000C and how silicon-on-insulator technology will meet this need

- Provides an understanding of semiconductor chemistry, thermodynamics and etching, along with technical explanations of common devices, descriptions of processing equipment and techniques, impurity testing, implantation damage, and more

Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results. The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination. The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others.

Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability.

This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the 'tricks of the trade' of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.

Starting from a broad overview of heat transport based on the Boltzmann Transport Equation, this book presents a comprehensive analysis of heat transport in bulk and nanomaterials based on a kinetic-collective model (KCM). This has become key to understanding the field of thermal transport in semiconductors, and represents an important stride. The book describes how heat transport becomes hydrodynamic at the nanoscale, propagating very much like a viscous fluid and manifesting vorticity and friction-like behavior. It introduces a generalization of Fourier's law including a hydrodynamic term based on collective behavior in the phonon ensemble. This approach makes it possible to describe in a unifying way recent experiments that had to resort to unphysical assumptions in order to uphold the validity of Fourier's law, demonstrating that hydrodynamic heat transport is a pervasive type of behavior in semiconductors at reduced scales.

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III-N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II-VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

This thesis describes novel devices for the secure identification of objects or electronic systems. The identification relies on the the atomic-scale uniqueness of semiconductor devices by measuring a macroscopic quantum property of the system in question. Traditionally, objects and electronic systems have been securely identified by measuring specific characteristics: common examples include passwords, fingerprints used to identify a person or an electronic device, and holograms that can tag a given object to prove its authenticity. Unfortunately, modern technologies also make it possible to circumvent these everyday techniques. Variations in quantum properties are amplified by the existence of atomic-scale imperfections. As such, these devices are the hardest possible systems to clone. They also use the least resources and provide robust security. Hence they have tremendous potential significance as a means of reliably telling the good guys from the bad.

This book focuses on the topological fermion condensation quantum phase transition (FCQPT), a phenomenon that reveals the complex behavior of all strongly correlated Fermi systems, such as heavy fermion metals, quantum spin liquids, quasicrystals, and two-dimensional systems, considering these as a new state of matter. The book combines theoretical evaluations with arguments based on experimental grounds demonstrating that the entirety of very different strongly correlated Fermi systems demonstrates a universal behavior induced by FCQPT. In contrast to the conventional quantum phase transition, whose physics in the quantum critical region are dominated by thermal or quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT are controlled by a system of quasiparticles resembling the Landau quasiparticles. The book discusses the modification of strongly correlated systems under the action of FCQPT, representing the "missing" instability, which paves the way for developing an entirely new approach to condensed matter theory; and presents this physics as a new method for studying many-body objects. Based on the authors' own theoretical investigations, as well as salient theoretical and experimental studies conducted by others, the book is well suited for both students and researchers in the field of condensed matter physics.

This thesis develops new techniques for simulating the low-energy behaviour of quantum spin systems in one and two dimensions. Combining these developments, it subsequently uses the formalism of tensor network states to derive an effective particle description for one- and two-dimensional spin systems that exhibit strong quantum correlations. These techniques arise from the combination of two themes in many-particle physics: (i) the concept of quasiparticles as the effective low-energy degrees of freedom in a condensed-matter system, and (ii) entanglement as the characteristic feature for describing quantum phases of matter. Whereas the former gave rise to the use of effective field theories for understanding many-particle systems, the latter led to the development of tensor network states as a description of the entanglement distribution in quantum low-energy states.

This book develops a methodology for the real-time coupled quantum dynamics of electrons and phonons in nanostructures, both isolated structures and those open to an environment. It then applies this technique to both fundamental and practical problems that are relevant, in particular, to nanodevice physics, laser-matter interaction, and radiation damage in living tissue. The interaction between electrons and atomic vibrations (phonons) is an example of how a process at the heart of quantum dynamics can impact our everyday lives. This is e.g. how electrical current generates heat, making your toaster work. It is also a key process behind many crucial problems down to the atomic and molecular scale, such as the functionality of nanoscale electronic devices, the relaxation of photo-excited systems, the energetics of systems under irradiation, and thermoelectric effects. Electron-phonon interactions represent a difficult many-body problem. Fairly standard techniques are available for tackling cases in which one of the two subsystems can be treated as a steady-state bath for the other, but determining the simultaneous coupled dynamics of the two poses a real challenge. This book tackles precisely this problem.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
Key Features
* Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
* The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
* The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
* Provides the most complete review of device degradation mechanisms as well as drain engineering methods
* Contains the most extensive reference list on the subject

The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

This book provides a state-of-the art overview of a highly interesting emerging research field in solid state physics/nanomaterials science, topological structures in ferroic materials. Topological structures in ferroic materials have received strongly increasing attention in the last few years. Such structures include domain walls, skyrmions and vortices, which can form in ferroelectric, magnetic, ferroelastic or multiferroic materials. These topological structures can have completely different properties from the bulk material they form in. They also can be controlled by external fields (electrical, magnetic, strain) or currents, which makes them interesting from a fundamental research point of view as well as for potential novel nanomaterials applications. To provide a comprehensive overview, international leading researches in these fields contributed review-like chapters about their own work and the work of other researchers to provide a current view of this highly interesting topic.

This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-charge domain. This analysis method reveals new peculiar and intriguing nonlinear phenomena in memristor circuits, such as the coexistence of different nonlinear dynamical behaviors, extreme multistability and bifurcations without parameters. The book also describes how arrays of memristor-based nonlinear oscillators and locally-coupled neural networks can be applied in the field of analog computing architectures, for example for pattern recognition. The book will be of interest to scientists and engineers involved in the conceptual design of physical memristor devices and systems, mathematical and circuit models of physical processes, circuits and networks design, system engineering, or data processing and system analysis.