This book discusses the new roles that the VLSI (very-large-scale integration of semiconductor circuits) is taking for the safe, secure, and dependable design and operation of electronic systems. The book consists of three parts. Part I, as a general introduction to this vital topic, describes how electronic systems are designed and tested with particular emphasis on dependability engineering, where the simultaneous assessment of the detrimental outcome of failures and cost of their containment is made. This section also describes the related research project "Dependable VLSI Systems," in which the editor and authors of the book were involved for 8 years. Part II addresses various threats to the dependability of VLSIs as key systems components, including time-dependent degradations, variations in device characteristics, ionizing radiation, electromagnetic interference, design errors, and tampering, with discussion of technologies to counter those threats. Part III elaborates on the design and test technologies for dependability in such applications as control of robots and vehicles, data processing, and storage in a cloud environment and heterogeneous wireless telecommunications. This book is intended to be used as a reference for engineers who work on the design and testing of VLSI systems with particular attention to dependability. It can be used as a textbook in graduate courses as well. Readers interested in dependable systems from social and industrial-economic perspectives will also benefit from the discussions in this book.

This book explores emerging topics in atomic- and nano-scale electronics after the era of Moore's Law, covering both the physical principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics beyond traditional complementary metal-oxide semiconductors (CMOS). Moore's law is not a physical law itself, but rather a visionary prediction that has worked well for more than 50 years but is rapidly coming to its end as the gate length of CMOS transistors approaches the length-scale of only a few atoms. Thus, the key question here is: "What is the future for nanoelectronics beyond CMOS?" The possible answers are found in this book. Introducing novel quantum devices such as atomic-scale electronic devices, ballistic devices, memristors, superconducting devices, this book also presents the reader with the physical principles underlying new ways of computing, as well as their practical implementation. Topics such as quantum computing, neuromorphic computing are highlighted here as some of the most promising candidates for ushering in a new era of atomic-scale electronics beyond CMOS.

This book addresses problems in three main developments in modern condensed matter physics- namely topological superconductivity, many-body localization and strongly interacting condensates/superfluids-by employing fruitful analogies from classical mechanics. This strategy has led to tangible results, firstly in superconducting nanowires: the density of states, a smoking gun for the long sought Majorana zero mode is calculated effortlessly by mapping the problem to a textbook-level classical point particle problem. Secondly, in localization theory even the simplest toy models that exhibit many-body localization are mathematically cumbersome and results rely on simulations that are limited by computational power. In this book an alternative viewpoint is developed by describing many-body localization in terms of quantum rotors that have incommensurate rotation frequencies, an exactly solvable system. Finally, the fluctuations in a strongly interacting Bose condensate and superfluid, a notoriously difficult system to analyze from first principles, are shown to mimic stochastic fluctuations of space-time due to quantum fields. This analogy not only allows for the computation of physical properties of the fluctuations in an elegant way, it sheds light on the nature of space-time. The book will be a valuable contribution for its unifying style that illuminates conceptually challenging developments in condensed matter physics and its use of elegant mathematical models in addition to producing new and concrete results.

This book discusses physical design and mask synthesis of directed self-assembly lithography (DSAL). It covers the basic background of DSAL technology, physical design optimizations such as placement and redundant via insertion, and DSAL mask synthesis as well as its verification. Directed self-assembly lithography (DSAL) is a highly promising patterning solution in sub-7nm technology.

This book focuses on the microscopic understanding of the function of organic semiconductors. By tracing the link between their morphological structure and electronic properties across multiple scales, it represents an important advance in this direction. Organic semiconductors are materials at the interface between hard and soft matter: they combine structural variability, processibility and mechanical flexibility with the ability to efficiently transport charge and energy. This unique set of properties makes them a promising class of materials for electronic devices, including organic solar cells and light-emitting diodes. Understanding their function at the microscopic scale - the goal of this work - is a prerequisite for the rational design and optimization of the underlying materials. Based on new multiscale simulation protocols, the book studies the complex interplay between molecular architecture, supramolecular organization and electronic structure in order to reveal why some materials perform well - and why others do not. In particular, by examining the long-range effects that interrelate microscopic states and mesoscopic structure in these materials, the book provides qualitative and quantitative insights into e.g. the charge-generation process, which also serve as a basis for new optimization strategies.

3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the Silicon Via (TSV) and Glass Via (TGV) technology, the book introduces 3DICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution.

This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the 'tricks of the trade' of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.

Starting from a broad overview of heat transport based on the Boltzmann Transport Equation, this book presents a comprehensive analysis of heat transport in bulk and nanomaterials based on a kinetic-collective model (KCM). This has become key to understanding the field of thermal transport in semiconductors, and represents an important stride. The book describes how heat transport becomes hydrodynamic at the nanoscale, propagating very much like a viscous fluid and manifesting vorticity and friction-like behavior. It introduces a generalization of Fourier's law including a hydrodynamic term based on collective behavior in the phonon ensemble. This approach makes it possible to describe in a unifying way recent experiments that had to resort to unphysical assumptions in order to uphold the validity of Fourier's law, demonstrating that hydrodynamic heat transport is a pervasive type of behavior in semiconductors at reduced scales.

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III-N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II-VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.

This book focuses on the topological fermion condensation quantum phase transition (FCQPT), a phenomenon that reveals the complex behavior of all strongly correlated Fermi systems, such as heavy fermion metals, quantum spin liquids, quasicrystals, and two-dimensional systems, considering these as a new state of matter. The book combines theoretical evaluations with arguments based on experimental grounds demonstrating that the entirety of very different strongly correlated Fermi systems demonstrates a universal behavior induced by FCQPT. In contrast to the conventional quantum phase transition, whose physics in the quantum critical region are dominated by thermal or quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT are controlled by a system of quasiparticles resembling the Landau quasiparticles. The book discusses the modification of strongly correlated systems under the action of FCQPT, representing the "missing" instability, which paves the way for developing an entirely new approach to condensed matter theory; and presents this physics as a new method for studying many-body objects. Based on the authors' own theoretical investigations, as well as salient theoretical and experimental studies conducted by others, the book is well suited for both students and researchers in the field of condensed matter physics.

This thesis describes novel devices for the secure identification of objects or electronic systems. The identification relies on the the atomic-scale uniqueness of semiconductor devices by measuring a macroscopic quantum property of the system in question. Traditionally, objects and electronic systems have been securely identified by measuring specific characteristics: common examples include passwords, fingerprints used to identify a person or an electronic device, and holograms that can tag a given object to prove its authenticity. Unfortunately, modern technologies also make it possible to circumvent these everyday techniques. Variations in quantum properties are amplified by the existence of atomic-scale imperfections. As such, these devices are the hardest possible systems to clone. They also use the least resources and provide robust security. Hence they have tremendous potential significance as a means of reliably telling the good guys from the bad.

This thesis develops new techniques for simulating the low-energy behaviour of quantum spin systems in one and two dimensions. Combining these developments, it subsequently uses the formalism of tensor network states to derive an effective particle description for one- and two-dimensional spin systems that exhibit strong quantum correlations. These techniques arise from the combination of two themes in many-particle physics: (i) the concept of quasiparticles as the effective low-energy degrees of freedom in a condensed-matter system, and (ii) entanglement as the characteristic feature for describing quantum phases of matter. Whereas the former gave rise to the use of effective field theories for understanding many-particle systems, the latter led to the development of tensor network states as a description of the entanglement distribution in quantum low-energy states.

This book develops a methodology for the real-time coupled quantum dynamics of electrons and phonons in nanostructures, both isolated structures and those open to an environment. It then applies this technique to both fundamental and practical problems that are relevant, in particular, to nanodevice physics, laser-matter interaction, and radiation damage in living tissue. The interaction between electrons and atomic vibrations (phonons) is an example of how a process at the heart of quantum dynamics can impact our everyday lives. This is e.g. how electrical current generates heat, making your toaster work. It is also a key process behind many crucial problems down to the atomic and molecular scale, such as the functionality of nanoscale electronic devices, the relaxation of photo-excited systems, the energetics of systems under irradiation, and thermoelectric effects. Electron-phonon interactions represent a difficult many-body problem. Fairly standard techniques are available for tackling cases in which one of the two subsystems can be treated as a steady-state bath for the other, but determining the simultaneous coupled dynamics of the two poses a real challenge. This book tackles precisely this problem.

Since its inception in 1966, the series of numbered volumes known as "Semiconductors and Semimetals" has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as "Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, " and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in "Semiconductors and Semimetals" have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Written and edited by internationally renowned expertsRelevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

This book provides a state-of-the art overview of a highly interesting emerging research field in solid state physics/nanomaterials science, topological structures in ferroic materials. Topological structures in ferroic materials have received strongly increasing attention in the last few years. Such structures include domain walls, skyrmions and vortices, which can form in ferroelectric, magnetic, ferroelastic or multiferroic materials. These topological structures can have completely different properties from the bulk material they form in. They also can be controlled by external fields (electrical, magnetic, strain) or currents, which makes them interesting from a fundamental research point of view as well as for potential novel nanomaterials applications. To provide a comprehensive overview, international leading researches in these fields contributed review-like chapters about their own work and the work of other researchers to provide a current view of this highly interesting topic.

This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-charge domain. This analysis method reveals new peculiar and intriguing nonlinear phenomena in memristor circuits, such as the coexistence of different nonlinear dynamical behaviors, extreme multistability and bifurcations without parameters. The book also describes how arrays of memristor-based nonlinear oscillators and locally-coupled neural networks can be applied in the field of analog computing architectures, for example for pattern recognition. The book will be of interest to scientists and engineers involved in the conceptual design of physical memristor devices and systems, mathematical and circuit models of physical processes, circuits and networks design, system engineering, or data processing and system analysis.

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

This practical, comprehensive book introduces both semiconductors and integrated optics at a fundamental level, and provides in-depth derivations and analysis of key integrated optical components for more advanced study. Written from an engineer's point of view, the book emphasizes practical application; the author develops and explains the concepts and techniques needed to solve real-world problems and to understand the engineering issues involved. The book first discusses semiconductor optical material systems and then addresses the waveguide in depth. Next, it covers active devices such as lasers, modulators and detectors. Finally, there is a survey of integration and hybridization, plus the development of photonic integrated circuits. With its clear explanations and design examples, the book provides both experienced and budding engineers with the information necessary to design both the structure and fabrication process of a semiconductor integrated optical device.

This book presents a comprehensive account of the phenomenon of spontaneous ordering. The phenomenon, which can be categorized as a self-organized process, is observed to occur spontaneously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great deal of interest in learning how to control this phenomenon so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability to provide an experimental environment of controlled alloy statistical fluctuations. As such, it impacts areas of semiconductor science and technology related to the materials science of epitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices.

During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made at providing theoretical models, both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade.

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

This is an overview of different models and mechanisms developed to describe the capture and relaxation of carriers in quantum-dot systems. Despite their undisputed importance, the mechanisms leading to population and energy exchanges between a quantum dot and its environment are not yet fully understood. The authors develop a first-order approach to such effects, using elementary quantum mechanics and an introduction to the physics of semiconductors. The book results from a series of lectures given by the authors at the Master's level.

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires' characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.