The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

This book is devoted to logic synthesis and design techniques for asynchronous circuits. It uses the mathematical theory of Petri Nets and asynchronous automata to develop practical algorithms implemented in a public domain CAD tool. Asynchronous circuits have so far been designed mostly by hand, and are thus much less common than their synchronous counterparts, which have enjoyed a high level of design automation since the mid-1970s. Asynchronous circuits, on the other hand, can be very useful to tackle clock distribution, modularity, power dissipation and electro-magnetic interference in digital integrated circuits. This book provides the foundation needed for CAD-assisted design of such circuits, and can also be used as the basis for a graduate course on logic design.

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary blocks" are Cooper pair and fluxon (vortex). This book presents new ways how to modify superconductivity and vortex matter through nanostructuring and the use of nanoscale magnetic templates. The basic nano-effects, vortex and vortex-antivortex patterns, vortex dynamics, Josephson phenomena, critical currents, and interplay between superconductivity and ferromagnetism at the nanoscale are discussed. Potential applications of nanostructured superconductors are also presented in the book.

In this thesis, the author has developed a high-resolution spin-resolved photoemission spectrometer that achieves the world-best energy resolution of 8 meV. The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.

The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect. Unlike the conventional Rashba splitting, an asymmetric in-plane spin polarization and a tremendous out-of-plane spin component were observed. Moreover, the author found that the spin polarization of Rashba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface.

The first edition of this book provided an introduction to the many static and dynamic features of magnetic flux structures in what are now called classical or low-temperature superconductors. It went out of print not long after the discovery of high-temperature superconductors in 1986 by J.G. Bednorz and K.A. Miiller, a discovery which resulted worldwide in an explosive growth of research and development in the field of superconductivity. Because of this upsurge of activities, a strong demand for this book clearly continued. Since the contents of the fourteen chapters of the first edition are still valid and continue to represent a useful introduction into the various subjects, it was felt that a reprinting of these chapters in this second edition would be highly attractive. In this way, the reader is also able to trace the earlier scienti fic developments, themselves constituting important ideas sometimes forgot ten by the new community dealing with high-temperature superconductivity. However, because of the exciting and important recent progress in the field of high-temperature superconductivity, an extensive chapter has been added in this second edition. It provides a summary of the new developments and a discussion of the highlights. Here keywords such as vortex matter, vortex imaging, and half-integer magnetic flux quanta describe surprising new issues."

The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering."

This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures - their optical and electrical properties - are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure-property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

These volumes contain the edited documents presented at the NATO-Sponsored Advanced Research Workshop (ARW) on Partial Pre8tre88ing, from Theory to Practice, held at the CEBTP Research Centre of Saint-Remy-Ies-Chevreuse, France, June 18-22, 1984. The workshop was a direct extension of the International Symposium on Nonlinearity and Continuity in Pre8tre88ed Concrete, organized by the editor at the University of Waterloo, Waterloo, Canada, July 4-6, 1983. The organization of the NATO-ARW on Partial Prestressing was prompted by the need to explain and reduce the wide dirrerences of expert oph: iipn. on the subject, which make more difficult the accep tance of partial prestressing by the profession at large. Specifically, the workshop attempted to: - produce a more unified picture of partial presetressing, by con fronting and, where possible, reconciling some conflicting American and European views on this subject; - bring theoretical advances on partial prestressing within the grasp of engineering practice; - provide the required background for developing some guidelines on the use of partial prestressing, in agreement with existing structural concrete standards. The five themes selected for the workshop agenda were: (1) Problems of Partially Prestressed Concrete (PPC). (2) Partially Prestressed Concrete Members: Static Loading. (3) PPC Members: Repeated and Dynamic Loadings. (4) Continuity in Partially Prestressed Concrete. (5) Practice of Partial Prestressing."

The photorefractive effect is now firmly established as one of the highest-sensitivity nonlinear optical effects, making it an attractive choice for use in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefractive materials. The last ten years have seen an upsurge of interest in photorefractive applications because of several advances in the synthesis and growth of new and sensitive materials. This book is a collection of many of the most important recent developments in photorefractive effects and materials. The introductory chapter, which provides the necessary tools for understanding a wide variety of photorefractive phenomena, is followed by seven contributed chapters that offer views of the state-of-the-art in several different material systems. The second chapter represents the most detailed study to date on the growth and photorefractive performance of BaTi03, one of the most important photorefractive ferroelectrlcs. The third chapter describes the process of permanently fixing holographic gratings in ferroelectrics, important for volumetric data storage with ultra-high data densities. The fourth chapter describes the discovery and theory of photorefractive spatial solitons. Photorefractive polymers are an exciting new class of photo refractive materials, described in the fifth chapter. Polymers have many advantages, primarily related to fabrication, that could promise a breakthrough to the marketplace because of ease and low-cost of manufacturing.

This book presents selected peer-reviewed contributions from the 2017 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2017 (Jabalpur, India, 14-16 October, 2017), which is devoted to processing techniques, physics, mechanics, and applications of advanced materials. The book focuses on a wide spectrum of nanostructures, ferroelectric crystals, materials and composites as well as promising materials with special properties. It presents nanotechnology approaches, modern environmentally friendly piezoelectric and ferromagnetic techniques and physical and mechanical studies of the structural and physical-mechanical properties of materials. Various original mathematical and numerical methods are applied to the solution of different technological, mechanical and physical problems that are interesting from theoretical, modeling and experimental points of view. Further, the book highlights novel devices with high accuracy, longevity and extended capabilities to operate under wide temperature and pressure ranges and aggressive media, which show improved characteristics, thanks to the developed materials and composites, opening new possibilities for different physico-mechanical processes and phenomena.

This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials,andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables,space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junctions.

This volume of the Handbook is the first of a two-volume set of reviews devoted to the rare-earth-based high-temperature oxide superconductors (commonly known as hiTC superconductors). The history of hiTC superconductors is a few months short of being 14 years old when Bednorz and Muller published their results which showed that (La, BA)2CuO4 had a superconducting transition of ~30 K, which was about 7K higher than any other known superconducting material. Within a year the upper temperature limit was raised to nearly 100K with the discovery of an ~90K superconducting transition in YBa2Cu3O7-&dgr;. The announcement of a superconductor with a transition temperature higher than the boiling point of liquid nitrogen set-off a frenzy of research on trying to find other oxide hiTC superconductors. Within a few months the maximum superconducting transition reached 110 K (Bi2Sr2Ca2Cu3010, and then 122K (TlBa2Ca3Cu4O11. It took several years to push TC up another 11 K to 133 K with the discovery of superconductivity in HgBa2Ca2Cu3O8, which is still the record holder today.

The field of solid state ionics is multidisciplinary in nature. Chemists, physicists, electrochimists, and engineers all are involved in the research and development of materials, techniques, and theoretical approaches. This science is one of the great triumphs of the second part of the 20th century. For nearly a century, development of materials for solid-state ionic technology has been restricted. During the last two decades there have been remarkable advances: more materials were discovered, modem technologies were used for characterization and optimization of ionic conduction in solids, trial and error approaches were deserted for defined predictions. During the same period fundamental theories for ion conduction in solids appeared. The large explosion of solid-state ionic material science may be considered to be due to two other influences. The first aspect is related to economy and connected with energy production, storage, and utilization. There are basic problems in industrialized countries from the economical, environmental, political, and technological points of view. The possibility of storing a large amount of utilizable energy in a comparatively small volume would make a number of non-conventional intermittent energy sources of practical convenience and cost. The second aspect is related to huge increase in international relationships between researchers and exchanges of results make considerable progress between scientists; one find many institutes joined in common search programs such as the material science networks organized by EEC in the European countries.

This thesis introduces readers to the type II superstring theories in the AdS5xS5 and AdS4xCP3 backgrounds. Each chapter exemplifies a different computational approach to measuring observables (conformal dimensions of single-trace operators and expectation values of Wilson loop operators) relevant for two supersymmetric theories: the N=4 super Yang-Mills theory and the N=6 Chern-Simons-matter (ABJM) theory. Perturbative techniques have traditionally been used to make quantitative predictions in quantum field theories, but they are only reliable as long as the interaction strengths are weak. The anti-de Sitter/conformal field theory (AdS/CFT) correspondence realizes physicists' dream of studying strongly coupled quantum field theories with "enhanced" symmetries, using the methods provided by string theory. The first part of the thesis sets up the semiclassical quantization of worldsheet sigma-model actions around string solutions of least area in AdS space. This machinery is used to capture quantum corrections at large coupling to next-to-leading and next-to-next-to-leading order by solving the determinants of partial differential operators and by computing Feynman diagrams, respectively. In turn, the second part presents an innovative approach based on Monte Carlo simulations to finite coupling for a lattice-discretized model of the AdS5xS5 superstring action. The thesis focuses on fundamental aspects, as well as on applications previously published by the author, and offers a valuable reference work for anyone interested in the most recent developments in this field.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

Solid-State Imaging with Charge-Coupled Devices covers the complete imaging chain: from the CCD's fundamentals to the applications. The book is divided into four main parts: the first deals with the basics of the charge-coupled devices in general. The second explains the imaging concepts in close relation to the classical television application. Part three goes into detail on new developments in the solid-state imaging world (light sensitivity, noise, device architectures), and part four rounds off the discussion with a variety of applications and the imager technology. The book is a reference work intended for all who deal with one or more aspects of solid- state imaging: the educational, scientific and industrial world. Graduates, undergraduates, engineers and technicians interested in the physics of solid-state imagers will find the answers to their imaging questions. Since each chapter concludes with a short section Worth Memorizing', reading this short summary allows readers to continue their reading without missing the main message from the previous section.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas."

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

In 1987 a major breakthrough occurred in materials science. A new family of materials was discovered that became superconducting above the temperature at which nitrogen gas liquifies, namely, 77 K or -196 DegreesC. Within months of the discovery, a wide variety of experimental techniques were brought to bear in order to measure the properties of these materials and to gain an understanding of why they superconduct at such high temperatures. Among the techniques used were electromagnetic absorption in both the normal and the superconducting states. The measurements enabled the determination of a wide variety of properties, and in some instances led to the observation of new effects not seen by other measu- ments, such as the existence of weak-link microwave absorption at low dc magnetic fields. The number of different properties and the degree of detail that can be obtained from magnetic field- and temperature-dependent studies of electromagnetic abso- tion are not widely appreciated. For example, these measurements can provide information on the band gap, critical fields, the H-T irreversibility line, the amount of trapped flux, and even information about the symmetry of the wave function of the Cooper pairs. It is possible to use low dc magnetic field-induced absorption of microwaves with derivative detection to verify the presence of superconductivity in a matter of minutes, and the measurements are often more straightforward than others. For example, they do not require the physical contact with the sample that is necessary when using four-probe resistivity to detect superconductivity.