This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investi

The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrodinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented."

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides readers through fundamental principles and focuses on crucial advances in making commercial use of silicon photonics a viable reality in the telecom and biomedical industries. Taking into account existing and anticipated industrial directions, the book balances coverage of theory and practical experimental research to explore solutions for obstacles to the viable commercialization of silicon photonics. The book's special features include: A section on silicon plasmonic waveguides Detailed coverage of novel III-V applications A chapter on 3D integration Discussion of applications for energy harvesting/photovoltaics This book reviews the most important technological trends and challenges. It presents topics involving major silicon photonics applications in telecommunications, high-power photonics, and biomedicine. It includes discussion of silicon plasmonic waveguides, piezoelectric tuning of silicon's optical properties, and applications of two-photon absorption. Expert authors with industry research experience examine the challenge of hybridizing III-V compound semiconductors on silicon to achieve monolithic light sources. They also address economic compatibility and heat dissipation issues in CMOS chips, challenges in designing electronic photonics in

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

The compendium gives a complete overview of the properties of MgB2 (Magnesium Diboride), a superconducting compound with a transition temperature of Tc = 39K, from the fundamental properties to the fabrication of multifilamentary wires and to the presentation of various applications. Written by eminent researchers in the field, this indispensable volume not only discusses superconducting properties of MgB2 compounds, but also describes known preparation methods of thin films and of bulk samples obtained under high pressure methods.A unique selling point of the book is the detailed coverage of various applications based on MgB2, starting with MRI magnets and high current cables, cooled by Helium (He) vapor. High current cables cooled by liquid hydrogen are also highlighted as an interesting alternative due to the shrinking He reserves on earth. Other pertinent subjects comprise permanent magnets, ultrafine wires for space applications and wind generator projects.

Drawn from the author's introductory course at the University of Orsay, Superconductivity of Metals and Alloys is intended to explain the basic knowledge of superconductivity for both experimentalists and theoreticians. These notes begin with an elementary discussion of magnetic properties of Type I and Type II superconductors. The microscopic theory is then built up in the Bogolubov language of self-consistent fields. This text provides the classic, fundamental basis for any work in the field of superconductivity.

This book is devoted to the systematic description of the role of microgeometry of modern piezo-active composites in the formation of their piezoelectric sensitivity. In five chapters, the authors analyse kinds of piezoelectric sensitivity for piezo-active composites with specific connectivity patterns and links between the microgeometric feature and piezoelectric response. The role of components and microgeometric factors is discussed in the context of the piezoelectric properties and their anisotropy in the composites. Interrelations between different types of the piezoelectric coefficients are highlighted. This book fills a gap in piezoelectric materials science and provides readers with data on the piezoelectric performance of novel composite materials that are suitable for sensor, transducer, hydroacoustic, energy-harvesting, and other applications.

A modern challenge is for solar cell materials to enable the highest solar energy conversion efficiencies, at costs as low as possible, and at an energy balance as sustainable as necessary in the future. This textbook explains the principles, concepts and materials used in solar cells. It combines basic knowledge about solar cells and the demanded criteria for the materials with a comprehensive introduction into each of the four classes of materials for solar cells, i.e. solar cells based on crystalline silicon, epitaxial layer systems of III-V semiconductors, thin-film absorbers on foreign substrates, and nano-composite absorbers. In this sense, it bridges a gap between basic literature on the physics of solar cells and books specialized on certain types of solar cells.The last five years had several breakthroughs in photovoltaics and in the research on solar cells and solar cell materials. We consider them in this second edition. For example, the high potential of crystalline silicon with charge-selective hetero-junctions and alkaline treatments of thin-film absorbers, based on chalcopyrite, enabled new records. Research activities were boosted by the class of hybrid organic-inorganic metal halide perovskites, a promising newcomer in the field.This is essential reading for students interested in solar cells and materials for solar cells. It encourages students to solve tasks at the end of each chapter. It has been well applied for postgraduate students with background in materials science, engineering, chemistry or physics.

Semiconductor Glossary is a one of a kind contribution to the pool of publications in the field of semiconductor science and engineering. It was conceived in recognition of an apparent lack of references that would provide brief, straightforward explanations of terms and terminology in the area of advanced semiconductor materials, devices, and processes with emphasis on the most current developments across all areas of nanoelectronics and nanophotonics.With over 2,000 terms defined and explained, the Second Edition of Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today. Using his over 40 years of experience in advanced semiconductor research and teaching, the author selected the terms and then defined and explained them with a broad spectrum of readers in mind. Advanced undergraduate and graduate students, semiconductor professionals at all levels, as well as people with just a general interest in semiconductors should all find Semiconductor Glossary to be a useful resource.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts."

Semiconductor Glossary is a one of a kind contribution to the pool of publications in the field of semiconductor science and engineering. It was conceived in recognition of an apparent lack of references that would provide brief, straightforward explanations of terms and terminology in the area of advanced semiconductor materials, devices, and processes with emphasis on the most current developments across all areas of nanoelectronics and nanophotonics.With over 2,000 terms defined and explained, the Second Edition of Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today. Using his over 40 years of experience in advanced semiconductor research and teaching, the author selected the terms and then defined and explained them with a broad spectrum of readers in mind. Advanced undergraduate and graduate students, semiconductor professionals at all levels, as well as people with just a general interest in semiconductors should all find Semiconductor Glossary to be a useful resource.

This book presents an overview of the science of superconducting materials. It covers the fundamentals and theories of superconductivity. Subjects of special interest involving mechanisms of high temperature superconductors, tunneling, transport properties, magnetic properties, critical states, vortex dynamics, etc. are present in the book. It assists as a fundamental resource on the developed methodologies and techniques involved in the synthesis, processing, and characterization of superconducting materials. The book covers numerous classes of superconducting materials including fullerenes, borides, pnictides or iron-based chalcogen superconductors ides, alloys and cuprate oxides. Their crystal structures and properties are described. Thereafter, the book focuses on the progress of the applications of superconducting materials into superconducting magnets, fusion reactors, and accelerators and other superconducting magnets. The applications also cover recent progress in superconducting wires, power generators, powerful energy storage devices, sensitive magnetometers, RF and microwave filters, fast fault current limiters, fast digital circuits, transport vehicles, and medical applications.

The rapid growth of the use of optoelectronic technology in Information and Communications Technology (ICT) has seen a complementary increase in the performance of such technologies. As a result, optoelectronic technologies have replaced the technology of electronic interconnections. However, the control of manufacturing techniques for optoelectronic systems is more delicate than that of microelectronic technologies. This practical resource, divided into four chapters, examines several methods for determining the reliability of infrared LED devices. The primary interest of this book focuses on methods of extracting fundamental parameters from the electrical and optical characterization of specific zones in components. Failure mechanisms are identified based on measured performance before and after aging tests. Knowledge of failure mechanisms allows formulation of degradation laws, which in turn allow an accurate lifetime distribution for specific devices to be proposed.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

This book presents the mechanics of piezoelectric semiconductor structures where the main electromechanical coupling of interest is the interaction between mechanical fields and semiconduction. This volume stands as the first full book treatment of this multi-physical subject from the mechanics angle. The analysis of piezoelectric semiconductor structures and devices is an emerging and rapidly growing interdisciplinary area involving materials, electronics, and solid mechanics. It has direct applications in the new area of piezotronics and piezo-phototronics. The book is theoretical, beginning with a phenomenological framework and progressing to include solutions to problems fundamental to the theory and application. Dr. Yang illustrates how in piezoelectric semiconductors, mechanical fields interact with semiconduction through the piezoelectrically produced electric fields by mechanical loads. This provides the foundation of piezotronic and piezo-phototronic devices in which semiconduction is induced, affected, manipulated, or controlled by mechanical fields. Also discussing composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors as well as thermal effects, the book is an ideal basic reference on the topic for researchers.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics-semiconductors, with their variable densities and effective masses. The author develops Green's functions starting from equilibrium Green's functions and going through modern time-dependent approaches to non-equilibrium Green's functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

This book provides a comprehensive introduction to the current status and future trends of materials and component design for fifth-generation (5G) wireless communications and beyond. Necessitated by rapidly increasing numbers of mobile devices and data volumes, and acting as a driving force for innovation in information technology, 5G networks are broadly characterized by ubiquitous connectivity, extremely low latency, and very high-speed data transfer. Such capabilities are facilitated by nanoscale and massive multi-input multi-output (MIMO) with extreme base station and device densities, as well as unprecedented numbers of antennas. This book covers semiconductor solutions for 5G electronics, design and performance enhancement for 5G antennas, high frequency PCB materials and design requirements, materials for high frequency filters, EMI shielding materials and absorbers for 5G systems, thermal management materials and components, and protective packaging and sealing materials for 5G devices. It explores fundamental physics, design, and engineering aspects, as well as the full array of state-of-the-art applications of 5G-and-beyond wireless communications. Future challenges and potential trends of 5G-and-beyond applications and related materials technologies are also addressed. Throughout this book, illustrations clarify core concepts, techniques, and processes. At the end of each chapter, references serve as a gateway to the primary literature in the field. This book is essential reading for today's students, scientists, engineers and professionals who want to understand the current status and future trends in materials advancement and component design in 5G and beyond, and acquire skills for selecting and using materials and 5G component design that takes economic and regulatory aspects into account.

This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.