On the current status of research activity, providing new information on the applications of SQUIDs, including magnetocardiography, immunoassays, and laser-SQUID microscopes, all of which are close to being commercially available.

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

Femtosecond laser micromachining of transparent material is a powerful and versatile technology. In fact, it can be applied to several materials. It is a maskless technology that allows rapid device prototyping, has intrinsic three-dimensional capabilities and can produce both photonic and microfluidic devices. For these reasons it is ideally suited for the fabrication of complex microsystems with unprecedented functionalities. The book is mainly focused on micromachining of transparent materials which, due to the nonlinear absorption mechanism of ultrashort pulses, allows unique three-dimensional capabilities and can be exploited for the fabrication of complex microsystems with unprecedented functionalities.This book presents an overview of the state of the art of this rapidly emerging topic with contributions from leading experts in the field, ranging from principles of nonlinear material modification to fabrication techniques and applications to photonics and optofluidics.

This volume, intended as a contribution to the 10th birthday of high T"c"-superconductivity, conveys the essential ideas of the field and addresses researchers as well as graduate students. A special feature is the pedagogical treatment of a variety of modern computational methods to deal with non-pertubative effects in strongly correlated systems. Among the topics treated are the Hubbard models, real space renormalization group methods, quantum phase transitions, the non-linear sigma model, spin ladders and layers, and the quantum Hall effect.

This book originated from a course given at the Univcrsidad Aut6noma of Madrid in the Spring of 1994 and in the Universidad Complutense of Madrid in 1995. The goal of these courses is to give the non-specialist an introduction to some old and new ideas in the field of strongly correlated systems, in particular the problems posed by the high-1 superconducting materials. As theoretical physicists, our starting viewpoint to address the problem of strongly correlat ed ferlnion systems and related issues of modern condensed matter physics .is the renormalization group approach applied both to quantU111 field theory and statistical physics. In recent years this has become not only a powerful tool for retrieving the essential physics of interacting systems but also a link between theoretical physics and modern condensed matter physics. Furthermore, once we have this common background for dealing with apparently different prob lems, we discuss more specific topics and even phenomenological aspects of the field. In doing so we have tried to make the exposition clear and simple, with out entering into technical details but focusing ill the fundamental physics of the phenomena under study. Therefore, ve expect that our experience ll1ay have some value to other people entering this fascinating field. We have divided these notes into three parts and each part into chapters, which correspond roughly to one or two lectures. Part I, Chaps. 1-2 (A. H. V."

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. * Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; * Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; * Provides both theoretical analysis and practical examples to illustrate design methodologies; * Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive to surface structure and morphology. This book serves as an introduction to RHEED for beginners and describes detailed experimental and theoretical treatments for experts, explaining how to analyze RHEED patterns. For beginners the principles of electron diffraction are explained and many examples of the interpretation of RHEED patterns are described. The second part of the book contains detailed descriptions of RHEED theory. The third part applies RHEED to the determination of surface structures, gives detailed descriptions of the effects of disorder, and critically reviews the mechanisms contributing to RHEED intensity oscillations. This unified and coherent account will appeal to both graduate students and researchers in the study of molecular beam epitaxial growth.

This book presents a new system of solar cells. Colloidal nanocrystals possess many physical and chemical properties which can be manipulated by advanced control over structural features like the particle size. One application field is photovoltaics where colloidal semiconductor nanocrystals are explored as components of photo-active layers which can be produced from liquid media, often in combination with conductive polymers. The further development of this interdisciplinary field of research requires a deep understanding of the physics and chemistry of colloidal nanocrystals, conducting polymers and photovoltaic devices. This book aims at bridging gaps between the involved scientific disciplines and presents important fundamentals and the current state of research of relevant materials and different types of nanoparticle-based solar cells. The book will be of interest to researchers and PhD students. Moreover, it may also serve to accompany specialized lectures in related areas.

stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. "Semiconductor Technologies in the Era of Electronics" therefore does not aim to look deeper in certain areas but it offers a broad and comprehensive overview of the field to:

- Experts of specific knowledge who want to expand the overall understanding to different areas
- Persons who wish to understand the principle of electronic devices often seen in everyday life
- Entrepreneurs interested in the innovations and changes of semiconductor technologies and overall electronics industry

Aprofound and theoretical approach is therefore used and special cases essential to understanding these important concept are presented."

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

The introduction of GaAs/ AIGaAs double heterostructure lasers has opened the door to a new age in the application of compound semiconductor materials to microwave and optical technologies. A variety and combination of semiconductor materials have been investigated and applied to present commercial uses with these devices operating at wide frequencies and wavelengths. Semiconductor modulators are typical examples of this technical evolutions and hsve been developed for commercial use. Although these have a long history to date, we are not aware of any book that details this evolution. Consequently, we have written a book to provide a comprehensive account of semiconductor modulators with emphasis on historical details and experimantal reports. The objective is to provide an up-to-date understanding of semiconductor modulators. Particular attention has been paid to multiple quantum well (MQW) modulators operating at long wavelengths, taking into account the low losses and dispersion in silica fibers occuring at around 1.3 and 1.55 mm. At the present time, MQW structures have been investigated but these have not been sufficiently developed to provide characteristic features which would be instructive enough for readers. One problem is the almost daily publication of papers on semiconductor modulators. Not only do these papers provide additional data, but they often modify the interpretations of particular concepts. Almost all chapters refer to the large number of published papers that can be consulted for future study.

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc. are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion.

The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced.

Other topics are: singularity in the case of transport current in a parallel magnetic field such as deviation from the Josephson relation, reversible flux motion inside pinning potentials which causes deviation from the critical state model prediction, the concept of the minimization of energy dissipation in the flux pinning phenomena which gives the basis for the critical state model, etc. Significant reduction in the AC loss in AC wires with very fine filaments originates from the reversible flux motion which is dominant in the two-dimensional pinning. The concept of minimum energy dissipation explains also the behavior of flux bundle size which determines the irreversibility line under the flux creep.

The new edition has been thoroughly updated, with new sections on the progress in enhancing the critical current density in high temperature superconductors by introduction of artificial pinning centers, the effect of packing density on the critical current density and irreversibility field in MgB2 and derivation of the force-balance equation from the minimization of the free energy including the pinning energy.

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

This book is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. This implementation is demonstrated by the presentation of several circuits where the MOS parametric amplifier cell is used: small gain amplifier, comparator with embedded pre-amplification, discrete-time mixer/IIR-Filter, and analog-to-digital converter (ADC). Experimental results are shown to validate the overall design technique.

Thin films are widely used in the electronic device industry. As the trend for miniaturization of electronic devices moves into the nanoscale domain, the reliability of thin films becomes an increasing concern. Building on the author's previous book, Electronic Thin Film Science by Tu, Mayer and Feldman, and based on a graduate course at UCLA given by the author, this new book focuses on reliability science and the processing of thin films. Early chapters address fundamental topics in thin film processes and reliability, including deposition, surface energy and atomic diffusion, before moving onto systematically explain irreversible processes in interconnect and packaging technologies. Describing electromigration, thermomigration and stress migration, with a closing chapter dedicated to failure analysis, the reader will come away with a complete theoretical and practical understanding of electronic thin film reliability. Kept mathematically simple, with real-world examples, this book is ideal for graduate students, researchers and practitioners.

This book on pressure-induced phase transitions in AB2X4 chalcogenide compounds deals with one important AmBnXp material. The interest in these materials is caused by their properties. The results are discussed for three main groups of structural families: cubic-spinel structures, defective tetragonal structures, and other structures like layered and wurtzite-type modifications. A systematic analysis of the behavior of cubic (spinel), tetragonal (defect chalcopyrites and stannites) and other crystal modifications of AB2X4 compounds under hydrostatic pressure is performed. The behavior of AIIAl2S4, AIIGa2S4, AIIAl2Se4 and AIIGa2Se4 compounds with defective tetragonal structures, compounds with layered and wurtzite structures under hydrostatic pressure and the pressure dependence of the band gap, lattice parameters, interatomic distances, vibrational modes and pressure-induced phase transitions is discussed. Many of these compounds, except oxide spinels, undergo a pressure-induced phase transition towards the rocksalt-type structure. The phase transition is preceded by disorder in the cation sublattice. The dependence of the transition pressure to the rocksalt-type structure as a function of the compound ionicity and the size criterion is analyzed. At high pressures, all ordered-vacancy compounds are found to exhibit a band anticrossing between several conduction bands that leads to a strong decrease of its pressure coefficient and consequently to a strong non-linear pressure dependence of the direct bandgap energy. Theoretical studies of phase transitions in several ordered-vacancy compounds reveal that the existence of ordered vacancies alter the cation-anion bond distances and their compressibilities. The book is written for students, Ph D. students and specialists in materials science, phase transitions and new materials.

This thesis deals with the dynamics of state-of-the-art nanophotonic semiconductor structures, providing essential information on fundamental aspects of nonlinear dynamical systems on the one hand, and technological applications in modern telecommunication on the other. Three different complex laser structures are considered in detail: (i) a quantum-dot-based semiconductor laser under optical injection from a master laser, (ii) a quantum-dot laser with optical feedback from an external resonator, and (iii) a passively mode-locked quantum-well semiconductor laser with saturable absorber under optical feedback from an external resonator. Using a broad spectrum of methods, both numerical and analytical, this work achieves new fundamental insights into the interplay of microscopically based nonlinear laser dynamics and optical perturbations by delayed feedback and injection.

During a century, from the Van der Waals mean field description (1874) of gases to the introduction of renormalization group (RG techniques 1970), thermodynamics and statistical physics were just unable to account for the incredible universality which was observed in numerous critical phenomena. The great success of RG techniques is not only to solve perfectly this challenge of critical behaviour in thermal transitions but to introduce extremely useful tools in a wide field of daily situations where a system exhibits scale invariance. The introduction of scaling, scale invariance and universality concepts has been a significant turn in modern physics and more generally in natural sciences. Since then, a new "physics of scaling laws and critical exponents", rooted in scaling approaches, allows quantitative descriptions of numerous phenomena, ranging from phase transitions to earthquakes, polymer conformations, heartbeat rhythm, diffusion, interface growth and roughening, DNA sequence, dynamical systems, chaos and turbulence. The chapters are jointly written by an experimentalist and a theorist. This book aims at a pedagogical overview, offering to the students and researchers a thorough conceptual background and a simple account of a wide range of applications. It presents a complete tour of both the formal advances and experimental results associated with the notion of scaling, in physics, chemistry and biology.

The research of unitary concepts in solid state and molecular chemistry is of current interest for both chemist and physicist communities. It is clear that due to their relative simplicity, low dimensional materials have attracted most of the attention. Thus, many non-trivial problems were solved in chain systems, giving some insight into the behavior of real systems which would otherwise be untractable. The NATO Advanced Research Workshop on "Organic and Inorganic Low-Dimensional Crystalline Materials" was organized to review the most striking electronic properties exhibited by organic and inorganic sytems whose space dimensionality ranges from zero (Od) to one (1d), and to discuss related scientific and technological potentials. The initial objectives of this Workshop were, respectively: i) To research unitary concepts in solid state physics, in particular for one dimensional compounds, ii) To reinforce, through a close coupling between theory and experiment, the interplay between organic and inorganic chemistry, on the one hand, and solid state physics on the other, iii) To get a salient understanding of new low-dimensional materials showing "exotic" physical properties, in conjunction with structural features.