"FIB Nanostructures "reviews a range of methods, including milling, etching, deposition, and implantation, applied to manipulate structures at the nanoscale. Focused Ion Beam (FIB) is an important tool for manipulating the structure of materials at the nanoscale, and substantially extends the range of possible applications of nanofabrication. FIB techniques are widely used in the semiconductor industry and in materials research for deposition and ablation, including the fabrication of nanostructures such as nanowires, nanotubes, nanoneedles, graphene sheets, quantum dots, etc. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of FIB for nanostructures and related materials and devices, and to provide a comprehensive introduction to the field and directions for further research. Chapters written by leading scientists throughout the world create a fundamental bridge between focused ion beam and nanotechnology that is intended tostimulate readers' interest in developing new types of nanostructures for application to semiconductor technology. These applications are increasingly important for the future development of materials science, energy technology, and electronic devices. The book can be recommended for physics, electrical engineering, and materials science departments as a reference on materials science and device design."

The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

In this thesis, the author investigates hidden-order phase transition at" T"0 = 17.5 K in the heavy-fermion URu2Si2. The four-fold rotational symmetry breaking in the hidden order phase, which imposes a strong constraint on the theoretical model, is observed through the magnetic torque measurement. The translationally invariant phase with broken rotational symmetry is interpreted as meaning that the hidden-order phase is an electronic "nematic" phase. The observation of such nematicity in URu2Si2 indicates a ubiquitous nature among the strongly correlated electron systems.

The author also studies the superconducting state of URu2Si2 below" T"c = 1.4 K, which coexists with the hidden-order phase. A peculiar vortex penetration in the superconducting state is found, which may be related to the rotational symmetry breaking in the hidden-order phase. The author also identifies a vortex lattice melting transition. This transport study provides essential clues to the underlying issue of quasiparticle dynamics as to whether a quasiparticle Bloch state is realized in the periodic vortex lattice.

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials.

At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale.

With the Sixth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.

This book focuses on the study of synthesized ZnO powder using Zn(CH3COO)2 2H2O precursor, methanol (as solvent), and sodium hydroxide (NaOH) to vary the pH. The successfully synthesized ZnO powder from the sol-gel centrifugation and sol-gel storage methods were characterized and investigated by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Fourier-transform infrared spectroscopy, UV visible spectroscopy, and photoluminescence test to compare the properties of the nanoparticles. The best characteristic of the ZnO powder from both methods was observed when the powders were coated on an ITO glass to fabricate a PEC. The current density voltage performances of both PECs were investigated under luminescent and dark conditions.
"

This thesis details the significant progress made in improving the performance of organic transistors and the network conductivity of carbon nanotubes. The first section investigates organic semiconductor nucleation and growth on the most common dielectric surface used to fabricate organic thin film transistors. The nucleation and growth of the semiconductor was determined to be a critical factor affecting the device performance. Excellent dielectric modification layers, which promote desirable semiconductor growth leading to high conductivity were identified, and a technologically relevant deposition technique was developed to fabricate high quality dielectric modification layers over large areas. This may represent an important step towards the realization of large area organic circuity. In the final section, lessons learned from studying organic semiconductor nucleation and growth were utilized to improve the conductivity of carbon nanotube networks. Selective nucleation of materials at the junctions between nanotubes in the network significantly decreased the network's sheet resistance. The resulting networks may be promising candidates for transparent electrodes with a variety of optoelectronic applications.

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrodinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented."

At extremely low temperatures, clouds of bosonic atoms form what is known as a Bose-Einstein condensate. Recently, it has become clear that many different types of condensates -- so called fragmented condensates -- exist. In order to tell whether fragmentation occurs or not, it is necessary to solve the full many-body Schrodinger equation, a task that remained elusive for experimentally relevant conditions for many years. In this thesis the first numerically exact solutions of the time-dependent many-body Schrodinger equation for a bosonic Josephson junction are provided and compared to the approximate Gross-Pitaevskii and Bose-Hubbard theories. It is thereby shown that the dynamics of Bose-Einstein condensates is far more intricate than one would anticipate based on these approximations. A special conceptual innovation in this thesis are optimal lattice models. It is shown how all quantum lattice models of condensed matter physics that are based on Wannier functions, e.g. the Bose/Fermi Hubbard model, can be optimized variationally. This leads to exciting new physics."

A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding modern electronic devices and also be prepared for future developments and advancements in this far-reaching area of science and technology.

The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components."

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

This book contains rewiev articles presenting the current status of high-temperature superconductivity research. The articles cover synthesis issues, materials properties and most fundamental theoretical problems. Applications of high- temperature superconductors are also reflected in several contributions.
The book addresses researchers working in fundamental research in solid-state physics as well as engineers developing new materials for industrial applications.

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5A, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.

The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes."

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

This thesis focuses on two areas - the development of miniature plastic lasers that can be powered by LEDs, and the application of these lasers as highly sensitive sensors for vapours of nitroaromatic explosives (e.g. TNT). Polymer lasers are extremely compact visible lasers; the research described in the thesis is groundbreaking, driving forward the technology and physical understanding to allow these lasers to be routinely pumped by a single high-power LED. A notable advance in the work is the demonstration of nanoimprinted polymer lasers, which exhibit the world's lowest pump threshold densities by two orders of magnitude. The thesis also advances the application of these compact, novel lasers as highly sensitive detectors of explosive vapours, demonstrating that rapid detection can be achieved when microporous polymers are used. This work also demonstrates a prototype CMOS-based microsystem sensor for explosive vapours, exploiting a new detection approach.

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

The unique electronic band structure of graphene gives rise to remarkable properties when in contact with a superconducting electrode. In this thesis two main aspects of these junctions are analyzed: the induced superconducting proximity effect and the non-local transport properties in multi-terminal devices. For this purpose specific models are developed and studied using Green function techniques, which allow us to take into account the detailed microscopic structure of the graphene-superconductor interface. It is shown that these junctions are characterized by the appearance of bound states at subgap energies which are localized at the interface region. Furthermore it is shown that graphene-supercondutor-graphene junctions can be used to favor the splitting of Cooper pairs for the generation of non-locally entangled electron pairs. Finally, using similar techniques the thesis analyzes the transport properties of carbon nanotube devices coupled with superconducting electrodes and in graphene superlattices.

From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

Starting from the early experiments, this detailed presentation, containing more than 500 references, provides a comprehensive review on current-induced nonequilibrium phenomena in quasi-one-dimensional superconductors, leading the reader from the fundamentals to the most recent research results. Experiments on monocrystalline filaments (whiskers) - including those obtained by the author - are compared with results on long thin film microbridges and related species and interpreted within the theoretical framework. Instructions on experimental techniques are given and yet unresolved problems are discussed. The book is well suited as an introduction for the novice and as a handbook for the active researcher.

The Aharonov-Bohm effect is associated with cyclic motion. It is one of a number of anholonomic effects, and this means that the dynamical description depends on the current position of the system and on the path by which it reached that position.
An example of an anholonomic effect is Foucault's famous pendulum, which simply demonstrates the Earth's rotation. The Sagnac effect - a light beam passing around a rotated system of mirrors - is another example. Modern dynamical developments such as Hannay's angle and Berry's phase are further useful examples.