Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

This invaluable book provides a comprehensive treatment of design and applications of semiconductor optical amplifiers (SOA). SOA is an important component for optical communication systems. It has applications as in-line amplifiers and as functional devices in evolving optical networks. The functional applications of SOAs were first studied in the early 1990's, since then the diversity and scope of such applications have been steadily growing. This is the second edition of a book on Semiconductor Optical Amplifiers first published in 2006 by the same authors. Several chapters and sections representing new developments in the chapters of the first edition have been added. The new chapters cover quantum dot semiconductor optical amplifiers (QD-SOA), reflective semiconductor optical amplifiers (RSOA) for passive optical network applications, two-photon absorption in amplifiers, and, applications of SOA as broadband sources. They represent advances in research, technology and commercial trends in the area of semiconductor optical amplifiers.Semiconductor Optical Amplifier is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of optical amplifiers. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

This volume provides a comprehensive introduction to the theory of d-wave superconductivity, focused on d-wave pairing symmetry and its physical consequences in the superconducting state. It discusses the basic concepts and methodologies related to high-temperature superconductivity and compares experimental phenomena with theoretical predictions. After a brief introduction to the basic theory of superconductivity and several models for high-temperature superconductivity, this book presents detailed derivations and explanations for various single-particle and collective properties of d-wave superconductors that can be monitored experimentally, including thermodynamics, angular-resolved photo-emission, single-particle and Josephson tunnelling, impurity scattering, magnetic and superfluid responses, transport and optical properties and mixed states. Various universal behaviours of d-wave superconductors are highlighted. Aimed primarily at graduate students and research scientists in condensed matter and materials physics, this text enables readers to understand systematically the physical properties of high-temperature superconductors.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

The main focus of the book is to present the effects of nanostructuring on superconducting critical parameters. Optimizing systematically flux and condensate confinement in various nanostructured superconductors, ranging from single nano-cells to their huge arrays, critical fields and currents can be increased up to their theoretical limits, thus drastically improving the potential for practical applications of nanostructured superconductors.

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

This is the first monograph that strives to give a complete and detailed description of the collective modes (CMs) in unconventional superfluids and superconductors (UCSF&SC). Using the most powerful method of modern theoretical physics - the path (functional) integral technique - authors build the three- and two-dimensional models for s-, p- and d-wave pairing in neutral as well as in charged Fermi-systems, models of superfluid Bose-systems and Fermi-Bose-mixtures. Within these models they study the collective properties of such systems as superfluid 3He, superfluid 4He, superfluid 3He-4He mixtures, superfluid 3He-films, superfluid 3He and superfluid 3He-4He mixtures in aerogel, high temperature superconductors, heavy-fermion superconductors, superconducting films etc. Authors compare their results with experimental data and predict a lot of new experiments on CMs study. This opens for experimentalists new possibilities for search of new intriguing features of collective behavior of UCSF&SC.The monograph creates the new scientific direction - the spectroscopy of collective modes in unconventional superfluids and superconductors. It will be useful for both theorists and experimentalists, studying superfluids and superconductors, low temperature physics, condensed matter physics, solid state physics. It could be used by graduate students specializing in the same areas.

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A."

A detailed study of the science, engineering and applications of terahertz technology, based on room-temperature solid-state devices, which are seen as the key technology for wider applications in this frequency range. The relative merits of electronic and optical devices are discussed and new device principles identified. Issues of terahertz circuit design, implementation and measurement are complemented by chapters on current and future applications in communications, sensing and remote surveillance. Audience: The unique coverage of all aspects of terahertz technology will appeal to both new and established workers in the field, as well as providing a survey for the interested reader.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Theory of Superconductivity: From Weak to Strong Coupling leads the reader from basic principles through detailed derivations and a description of the many interesting phenomena in conventional and high-temperature superconductors. The book describes physical properties of novel superconductors, in particular, the normal state, superconducting critical temperatures and critical fields, isotope effects, normal and superconducting gaps, tunneling, angle-resolved photoemission, stripes, and symmetries. The book divides naturally into two parts. Part I introduces the phenomenology of superconductivity, the microscopic BCS theory, and its extension to the intermediate coupling regime. The first three chapters of this part cover generally accepted themes in the conventional theory of superconductivity and serve as a good introduction to the subject. Chapter 4 describes what happens to the conventional theory when the coupling between electrons becomes strong. Part II describes key physical properties of high-temperature superconductors and their theoretical interpretation. Alternative viewpoints are discussed, but the emphasis is placed on the bipolaron theory.

In this text, specialists in silicon-on-insulator technology from both East and West meet, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterization, device and circuit issues.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch-De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree-Fock equations, and Landau's Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg-Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov's flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

Organic Light Emitting Diodes: Principles, Characteristics, and Processes presents recent developments in organic electroluminescence and their application to light emitting diodes. In six chapters and complete with an extensive set of references, it describes and illustrates the physical principles of organic LEDs and their electrical and optical characteristics with a wide range of examples and practical studies. The author presents a unified approach to the description and functioning of organic LEDs, based on a comprehensive background of relevant physical processes and provides a clear foundation for the prediction and design of new improved electroluminescent devices.

In recent years, remarkable progress in the fabrication of novel mesoscopic devices has produced a revival of interest in quantum Hall physics. New types of measurements, more precise and efficient than ever, have made it possible to focus closely on the electronic properties of quantum Hall edge states. This is achieved by applying charge and heat currents at mesoscopic length scales, attaching metallic gates and Ohmic contacts, and splitting edge channels with the help of quantum point contacts. The experiments reveal fascinating new phenomena, such as the interference, statistics, and topological phase shifts of fractionally charged quasi-particles, strong interaction and correlation effects, and phase transitions induced by non-Gaussian fluctuations. The thesis discusses some puzzling results of these experiments and presents a coherent picture of mesoscopic effects in quantum Hall systems, which accounts for integer and fractional filling factors and ranges from microscopic theory to effective models, and covers both equilibrium and non-equilibrium phenomena.

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.

The reference provides interdisciplinary discussion for diverse II-VI semiconductors with a wide range of topics. The third volume of a three volume set, the book provides an up-to-date account of the present status of multifunctional II-VI semiconductors, from fundamental science and processing to their applications as various sensors, biosensors, and radiation detectors, and based on them to formulate new goals for the further research. The chapters in this volume provide a comprehensive overview of the manufacture, parameters and principles of operation of these devices. The application of these devices in various fields such medicine, agriculture, food quality control, environment monitoring and others is also considered. The analysis carried out shows the great potential of II-VI semiconductor-based sensors and detectors for these applications. Considers solid-state radiation detectors based on semiconductors of II-VI group and their applications; Analyzes the advantages of II-VI compounds to develop chemical and optical gas and ion sensors;  Describes all types of biosensors based on II-VI semiconductors and gives examples of their use in various fields.

A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

PMCommon methods of local magnetic imaging display either a high spatial resolution and relatively poor field sensitivity (MFM, Lorentz microscopy), or a relatively high field sensitivity but limited spatial resolution (scanning SQUID microscopy). Since the magnetic field of a nanoparticle or nanostructure decays rapidly with distance from the structure, the achievable spatial resolution is ultimately limited by the probe-sample separation. This thesis presents a novel method for fabricating the smallest superconducting quantum interference device (SQUID) that resides on the apex of a very sharp tip. The nanoSQUID-on-tip displays a characteristic size down to 100 nm and a field sensitivity of 10 -3 Gauss/Hz (1/2). A scanning SQUID microsope was constructed by gluing the nanoSQUID-on-tip?? to a quartz tuning-fork. This enabled the nanoSQUID to be scanned within nanometers of the sample surface, providing simultaneous images of sample topography and the magnetic field distribution. This microscope represents a significant improvement over the existing scanning SQUID techniques and is expected to be able to image the spin of a single electro