This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures - their optical and electrical properties - are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure-property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

Compared to traditional electrical filaments, arc lamps, and fluorescent lamps, solid-state lighting offers higher efficiency, reliability, and environmentally friendly technology. LED / solid-state lighting is poised to take over conventional lighting due to cost savings-there is pretty much no debate about this. In response to the recent activity in this field, Fundamentals of Solid-State Lighting: LEDs, OLEDs, and Their Applications in Illumination and Displays covers a range of solid-state devices, technologies, and materials used for lighting and displays. It also examines auxiliary but critical requirements of efficient applications, such as modeling, thermal management, reliability, and smart lighting. The book discusses performance metrics of LEDs such as efficiency, efficacy, current-voltage characteristics, optical parameters like spectral distribution, color temperature, and beam angle before moving on to luminescence theory, injection luminescence, radiative and non-radiative recombination mechanisms, recombination rates, carrier lifetimes, and related topics. This lays down the groundwork for understanding LED operation. The book then discusses energy gaps, light emission, semiconductor material, special equipment, and laboratory facilities. It also covers production and applications of high-brightness LEDs (HBLEDs) and organic LEDs (OLEDs). LEDs represent the landmark development in lighting since the invention of electric lighting, allowing us to create unique, low-energy lighting solutions, not to talk about their minor maintenance expenses. The rapid strides of LED lighting technology over the last few years have changed the dynamics of the global lighting market, and LEDs are expected to be the mainstream light source in the near future. In a nutshell, the book traces the advances in LEDs, OLEDs, and their applications, and presents an up-to-date and analytical perspective of the scenario for audiences of different backgrounds and interests.

This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design
Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts.
Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields.
The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable process conditions and determining their impact on output parameters that measure quality. The authors introduce process modeling concepts, including several advanced process control topics such as run-by-run, supervisory control, and process and equipment diagnosis.
Critical coverage includes the following:
* Combines process control and semiconductor manufacturing
* Unique treatment of system and software technology and management of overall manufacturing systems
* Chapters include case studies, sample problems, and suggested exercises
* Instructor support includes electronic copies of the figures and an instructor's manual
Graduate-level students and industrial practitioners will benefit from the detailed exami?nation of how electronic materials and supplies are converted into finished integrated circuits and electronic products in a high-volume manufacturing environment.
An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
An Instructor Support FTP site is also available.

The book provides a technical account of the basic physics of nanostructures, which are the foundation of the hardware found in all manner of computers. It will be of interest to semiconductor physicists and electronic engineers and advanced research students. Crystalline nanostructures have special properties associated with electrons and lattice vibrations and their interaction. The result of spatial confinement of electrons is indicated in the nomenclature of nanostructures: quantum wells, quantum wires, quantum dots. Confinement also has a profound effect on lattice vibrations. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh's work in the late nineteenth century, but no such documentation exists for optical modes. It is only comparatively recently that any theory of the elastic properties of optical modes exists, and a comprehensive account is given in this book. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces the hybridization of longitudinally and transversely polarized modes, along with, in polar material, electromagnetic modes. Hybrid acoustic and optical modes are described, with an emphasis on polar-optical phonons and their interaction with electrons. Scattering rates in single heterostructures, quantum wells and quantum wires are described and the anharmonic interaction in quantum dots discussed. A description is given of the effects of dynamic screening of hybrid polar modes and the production of hot phonons.

The only one-stop reference to design, analysis, and manufacturing concepts for power devices utilizing HTS.

High temperature superconductors (HTS) have been used for building many devices for electric grids worldwide and for large ship propulsion motors for the U.S. Navy. And yet, there has been no single source discussing theory and design issues relating to power applications of HTS--until now. This book provides design and analysis for various devices and includes examples of devices built over the last decade.

Starting with a complete overview of HTS, the subsequent chapters are dedicated to specific devices: cooling and thermal insulation systems; rotating AC and DC machines; transformers; fault current limiters; power cables; and Maglev transport. As applicable, each chapter provides a history of the device, principles, configuration, design and design challenges, prototypes, and manufacturing issues, with each ending with a summary of the material covered. The design analysis and design examples provide critical insight for readers to successfully design their own devices. Original equipment manufacturer (OEM) designers, industry and utilities users, universities and defense services research groups, and senior/postgraduate engineering students and instructors will rely on this resource.

"HTS technology reduces electric losses and increases the efficiency of power equipment. This book by Swarn Kalsi, a leading expert on the HTS subject, provides a survey of the HTS technology and the design rules, performance analyses, and manufacturing concepts for power application-related devices. It compares conventional and HTS technology approaches for device design and provides significant examples of devices utilizing the HTS technology today. The book is useful for a broad spectrum of professionals worldwide: students, teaching staff, and OEM designers as well as users in industry and electric utilities."
--Professor Dr. Rolf Hellinger, Research and Technologies Corporate Technology, Siemens AG

The introduction and preliminary chapters discuss the background and development of CCD technology, and the structure and operation of CCD image sensors. Subsequent chapters examine the technology and sensor manufacturing process, including modelling, the theories behind digital imaging processing, and the applications of digital cameras. Finally, the editor discusses future technological and market trends anticipated in this fast growing industry.
This title contains the most up-to-date and comprehensive information on the development of the Charge-Coupled Device (CCD), which makes possible the widespread use of consumer camcorders and broadcasting color cameras. The material in this book is comprehensive enough to be of great value to researchers, industrialists and post-graduate students in the area of image technology, while the simplicity and clarity of explanation make it easy to understand to the non-expert.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Superconductors with high critical temperatures are extremely complex and it remains difficult to synthesize high quality samples. In this regard, the materials and crystallographic aspects, drawing together the fields of structural chemistry and physics, solid state chemistry and physics, and applications and properties, both for cuprate and organic superconductors, play a vital role in our understanding of the phenomenon. Among other things, the contributions to local structural elucidation contained in the present work should affect the reader's prejudices concerning the idealized average structure.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.
Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.
With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area.
Chapters review electron diffraction techniques, including the methodology for observations and measurementsDiscusses the principles and applications of photoemission techniquesExamines alternative in situ characterisation techniques

Magnetostatic waves (MSWs) in magnetodielectric media are fundamental for the creation of various highly efficient devices for analog information processing in the microwave range. These devices include various filters, delay lines, phase shifters, frequency converters, nonreciprocal and nonlinear devices, and others. Magnetostatic Waves in Inhomogeneous Fields examines magnetostatic waves and their distribution in non-uniformly magnetized films and structures. The propagation of magnetostatic waves in magnetodielectric environments is accompanied by numerous and very diverse physical effects, sharply distinguishing them from ordinary electromagnetic waves in isotropic media. The authors address dispersion properties and noncollinearity of phase and group velocity vectors, as well as non-reciprocal propagation. Key Features Offers mathematical tools used in the calculation of properties of magnetostatic waves Includes a current literature review of magnetostatic waves and domain structures in garnet-ferrite films Considers the issue of converting magnetostatic waves into electromagnetic ones

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

During a century, from the Van der Waals mean field description (1874) of gases to the introduction of renormalization group (RG techniques 1970), thermodynamics and statistical physics were just unable to account for the incredible universality which was observed in numerous critical phenomena. The great success of RG techniques is not only to solve perfectly this challenge of critical behaviour in thermal transitions but to introduce extremely useful tools in a wide field of daily situations where a system exhibits scale invariance. The introduction of scaling, scale invariance and universality concepts has been a significant turn in modern physics and more generally in natural sciences. Since then, a new "physics of scaling laws and critical exponents", rooted in scaling approaches, allows quantitative descriptions of numerous phenomena, ranging from phase transitions to earthquakes, polymer conformations, heartbeat rhythm, diffusion, interface growth and roughening, DNA sequence, dynamical systems, chaos and turbulence. The chapters are jointly written by an experimentalist and a theorist. This book aims at a pedagogical overview, offering to the students and researchers a thorough conceptual background and a simple account of a wide range of applications. It presents a complete tour of both the formal advances and experimental results associated with the notion of scaling, in physics, chemistry and biology.

This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A."

A detailed study of the science, engineering and applications of terahertz technology, based on room-temperature solid-state devices, which are seen as the key technology for wider applications in this frequency range. The relative merits of electronic and optical devices are discussed and new device principles identified. Issues of terahertz circuit design, implementation and measurement are complemented by chapters on current and future applications in communications, sensing and remote surveillance. Audience: The unique coverage of all aspects of terahertz technology will appeal to both new and established workers in the field, as well as providing a survey for the interested reader.

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.
The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.
* State-of-the-art information available for the first time as an all-in-source
* Extensive reference list making it an indispensable reference book
* Broad coverage from fundamental aspects up to industrial applications

A comprehensive and state-of-the-art resource for the design and fabrication of IGBT

Semiconductor devices, particularly the insulated gate bipolar transistor (IGBT), form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

• Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies
• Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT
• IGBT physics, device and circuit models
• IGBT unit cell design and latching suppression techniques
• IGBT fabrication steps and process design
• IGBT power modules

Unique in focusing on IGBT in its entirety, this book will be an invaluable resource for engineering students and professionals alike.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Organic Light Emitting Diodes: Principles, Characteristics, and Processes presents recent developments in organic electroluminescence and their application to light emitting diodes. In six chapters and complete with an extensive set of references, it describes and illustrates the physical principles of organic LEDs and their electrical and optical characteristics with a wide range of examples and practical studies. The author presents a unified approach to the description and functioning of organic LEDs, based on a comprehensive background of relevant physical processes and provides a clear foundation for the prediction and design of new improved electroluminescent devices.