The Future of Semiconductor Oxides in Next-Generation Solar Cells begins with several chapters covering the synthesis of semiconductor oxides for NGSCs. Part II goes on to cover the types and applications of NGSCs currently under development, while Part III brings the two together, covering specific processing techniques for NGSC construction. Finally, Part IV discusses the stability of SO solar cells compared to organic solar cells, and the possibilities offered by hybrid technologies. This comprehensive book is an essential reference for all those academics and professionals who require thorough knowledge of recent and future developments in the role of semiconductor oxides in next generation solar cells.

Semiconductors for Photocatalysis, Volume 97 covers the latest breakthrough research and exciting developments in semiconductor photocatalysts and electrodes for water splitting and CO2 reduction. It includes a broad range of materials such as metal-oxides, metal-nitrides, silicon, III-V semiconductors, and the emerging layered compounds. New to this volume are chapters covering the Fundamentals of Semiconductor Photoelectrodes, Charge Carrier Dynamics in Metal Oxide Photoelectrodes for Water Oxidation, Photophysics and Photochemistry at the Semiconductor/Electrolyte Interface for Solar Water Splitting, V Semiconductor Photoelectrodes, III-Nitride Semiconductor Photoelectrodes, and Rare Earth Containing Materials for Photoelectrochemical Water Splitting Applications. In addition, the design and modeling of photocatalysts and photoelectrodes and the fundamental mechanisms of water splitting and CO2 reduction is also discussed.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Principles and Applications of Organic Light Emitting Diodes (OLEDs)explores the ways in which the development of organic semiconductor materials is opening up new applications in electronic and optoelectronic luminescent devices. The book begins by covering the principles of luminescence and the luminescent properties of organic semiconductors. It then covers the development of luminescent materials for OLEDs, discussing the advantages and disadvantages of organic versus inorganic luminescent materials. The fabrication and characterization of OLEDs is also covered in detail, including information on, and comparisons of, vacuum deposition and solution techniques. Finally, applications of OLEDs are explored, including OLEDs in solid-state lighting, colored lighting, displays and potential future applications, such as ultra-thin and flexible technologies. This book is an excellent resource both for experts and newcomers to the field of organic optoelectronics and OLEDs. It is ideal for scientists working on optical devices, lighting, display and imaging technologies, and for all those engaged in research in photonics, luminescence and optical materials.

This volume contains most of the invited talks of the 2001 meeting of the Solid State Physics Section of the Deutsche Physikalische Gesellschaft held from March 26 to 30 in Hamburg, Germany. The topics covered reflect the present activities in this lively domain of modern physics and are thus supposed to flashlight the state-of-the-art in condensed matter physics in Germany in the year 2001.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.

These proceedings of the NATO-ARW "Electron transport in nanosystems" held at the "Russia" Hotel, Yalta, Ukraine from 17-21 September 2007 resulted in many discussions between various speakers. The wide range of topics discussed at the Yalta NATO meeting included the new nanodevice applications, novel materials, superconductivity and s- sors. There have been many signi?cant advances in the past 2 years and some entirely new directions of research in these ?elds are just opening up. Recent advances in nanoscience have demonstrated that fundamentally new phy- cal phenomena are found when systems are reduced in size with dimensions, comparable to the fundamental microscopic length scales of the investigated material. Late developments in nanotechnology and measurement techniques now allow experimental investigation of transport properties of nanodevices. Great interest in this research is focused on development of spintronics, molecular electronics and quantum information processing and graphene. At the workshop, important open problems concerning cuprate superconductity, mesoscopic superconductors and novel superconductors such MgB,CeCoIn 2 5 whereconsidered.Therewasmuchdiscussionofthemechanismandsymmetry of pairing for cuprate superconductorsas well as the nature of the pseudogap. In the sessiononnovelsuperconductors,the physicalproperties of MgB were 2 discussed. There were also lively debates about two-gap superconductivity in MgB .

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging). Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications. Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles. Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles. Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.

Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

This book provides a comprehensive introduction to the current status and future trends of materials and component design for fifth-generation (5G) wireless communications and beyond. Necessitated by rapidly increasing numbers of mobile devices and data volumes, and acting as a driving force for innovation in information technology, 5G networks are broadly characterized by ubiquitous connectivity, extremely low latency, and very high-speed data transfer. Such capabilities are facilitated by nanoscale and massive multi-input multi-output (MIMO) with extreme base station and device densities, as well as unprecedented numbers of antennas. This book covers semiconductor solutions for 5G electronics, design and performance enhancement for 5G antennas, high frequency PCB materials and design requirements, materials for high frequency filters, EMI shielding materials and absorbers for 5G systems, thermal management materials and components, and protective packaging and sealing materials for 5G devices. It explores fundamental physics, design, and engineering aspects, as well as the full array of state-of-the-art applications of 5G-and-beyond wireless communications. Future challenges and potential trends of 5G-and-beyond applications and related materials technologies are also addressed. Throughout this book, illustrations clarify core concepts, techniques, and processes. At the end of each chapter, references serve as a gateway to the primary literature in the field. This book is essential reading for today's students, scientists, engineers and professionals who want to understand the current status and future trends in materials advancement and component design in 5G and beyond, and acquire skills for selecting and using materials and 5G component design that takes economic and regulatory aspects into account.

The theoretical understanding of transport properties of semiconductor structures on short length and short time scales, and in the nonlinear high-field regime is of particular relevance for future electronic and optoelectronic materials. In recent years great progress has been made in a variety of aspects. Theory of Transport Properties of Semiconductor Nanostructures presents a state-of-the-art overview of theoretical methods, results, and applications in the field. It contains eleven chapters which are written by leading researchers. This book starts with a tutorial introduction to the subject, then in the following five chapters a hierarchy of different approaches to transport theory is presented, descending from a macroscopic level (quasihydrodynamic simulation) via semiclassical Monte Carlo techniques and cellular automata to a full quantum transport theory covering both Green's functions and density matrix theory. In the last five chapters the formalism is applied to more specific topics which are of great current interest such as transport in mesoscopic structures, chaotic dynamics in lateral superlattices, Bloch oscillations and Wannier-Stark localization, field domain formation in superlattices, and scattering processes in low-dimensional structures. Theory of Transport Properties of Semiconductor Nanostructures is aimed at physicists, electronic engineers, materials scientists and applied mathematicians. It may be used in research, as a professional reference in microelectronics, optoelectronics, and graduate teaching. This book should be useful not only to graduate students but also to professional scientists working in the field. It attempts to present comprehensive reviewsof the most important advances, and often takes a tutorial approach.

This book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences. The book covers all the basic aspects of electronics engineering, from electronic materials to devices, and then to basic electronic circuits. The book can be used for freshman (first year) and sophomore (second year) courses in undergraduate engineering. It can also be used as a supplement or primer for more advanced courses in electronic circuit design. The book uses a simple narrative style, thus simplifying both classroom use and self study. Numerical values of dimensions of the devices, as well as of data in figures and graphs have been provided to give a real world feel to the device parameters. It includes a large number of numerical problems and solved examples, to enable students to practice. A laboratory manual is included as a supplement with the textbook material for practicals related to the coursework. The contents of this book will be useful also for students and enthusiasts interested in learning about basic electronics without the benefit of formal coursework.

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories-static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Doped by isovalent or heterovalent foreign impurities, II-VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II-VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II-VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases. The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical-chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison. This book provides invaluable data for technologists and researchers involved in developing and manufacturing II-VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering. Check out the companion books: Ternary Alloys Based on II-VI Semiconductor Compounds and

Compared to traditional electrical filaments, arc lamps, and fluorescent lamps, solid-state lighting offers higher efficiency, reliability, and environmentally friendly technology. LED / solid-state lighting is poised to take over conventional lighting due to cost savings-there is pretty much no debate about this. In response to the recent activity in this field, Fundamentals of Solid-State Lighting: LEDs, OLEDs, and Their Applications in Illumination and Displays covers a range of solid-state devices, technologies, and materials used for lighting and displays. It also examines auxiliary but critical requirements of efficient applications, such as modeling, thermal management, reliability, and smart lighting. The book discusses performance metrics of LEDs such as efficiency, efficacy, current-voltage characteristics, optical parameters like spectral distribution, color temperature, and beam angle before moving on to luminescence theory, injection luminescence, radiative and non-radiative recombination mechanisms, recombination rates, carrier lifetimes, and related topics. This lays down the groundwork for understanding LED operation. The book then discusses energy gaps, light emission, semiconductor material, special equipment, and laboratory facilities. It also covers production and applications of high-brightness LEDs (HBLEDs) and organic LEDs (OLEDs). LEDs represent the landmark development in lighting since the invention of electric lighting, allowing us to create unique, low-energy lighting solutions, not to talk about their minor maintenance expenses. The rapid strides of LED lighting technology over the last few years have changed the dynamics of the global lighting market, and LEDs are expected to be the mainstream light source in the near future. In a nutshell, the book traces the advances in LEDs, OLEDs, and their applications, and presents an up-to-date and analytical perspective of the scenario for audiences of different backgrounds and interests.

This is an up-to-date treatment of the analysis and design of CMOS integrated digital logic circuits. The self-contained book covers all of the important digital circuit design styles found in modern CMOS chips, emphasizing solving design problems using the various logic styles available in CMOS.

This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

The book provides a technical account of the basic physics of nanostructures, which are the foundation of the hardware found in all manner of computers. It will be of interest to semiconductor physicists and electronic engineers and advanced research students. Crystalline nanostructures have special properties associated with electrons and lattice vibrations and their interaction. The result of spatial confinement of electrons is indicated in the nomenclature of nanostructures: quantum wells, quantum wires, quantum dots. Confinement also has a profound effect on lattice vibrations. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh's work in the late nineteenth century, but no such documentation exists for optical modes. It is only comparatively recently that any theory of the elastic properties of optical modes exists, and a comprehensive account is given in this book. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces the hybridization of longitudinally and transversely polarized modes, along with, in polar material, electromagnetic modes. Hybrid acoustic and optical modes are described, with an emphasis on polar-optical phonons and their interaction with electrons. Scattering rates in single heterostructures, quantum wells and quantum wires are described and the anharmonic interaction in quantum dots discussed. A description is given of the effects of dynamic screening of hybrid polar modes and the production of hot phonons.