This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

This volume presents the results of a multi-year research programme funded by the Deutsche Forschungsgemeinschaft (German Research Council), which explains how organic solar cells work. In this new promising photovoltaic technology, carbon-based materials are deposited by low-cost methods onto flexible substrates, thus allowing devices which open completely new applications like transparent coatings for building, solar cells integrated into clothing or packages, and many more. The investigation of organic solar cells is an interdisciplinary topic, covering physics, chemistry and engineering. The different chapters address topics ranging from the synthesis of new organic materials, to the characterization of the elementary processes such as exciton transport and separation, and the principles of highly efficient device design.

This book summarizes the current knowledge of two-dimensional oxide materials. The fundamental properties of 2-D oxide systems are explored in terms of atomic structure, electronic behavior and surface chemistry. The concept of polarity in determining the stability of 2-D oxide layers is examined, charge transfer effects in ultrathin oxide films are reviewed as well as the role of defects in 2-D oxide films. The novel structure concepts that apply in oxide systems of low dimensionality are addressed, and a chapter giving an overview of state-of-the-art theoretical methods for electronic structure determination of nanostructured oxides is included. Special emphasis is given to a balanced view from the experimental and the theoretical side. Two-dimensional materials, and 2-D oxides in particular, have outstanding behavior due to dimensionality and proximity effects. Several chapters treat prototypical model systems as illustrative examples to discuss the peculiar physical and chemical properties of 2-D oxide systems. The chapters are written by renowned experts in the field.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

Using the simplest and most physically intuitive arguments and methods, Introduction to Superconductivity exposes not only graduate students but professionals in academe and industry to the breadth and richness of the phenomenon of superconductivity. Applications as well as fundamental principles are thoroughly covered. The author not only views superconductivity as a macroscopic quantum state, as described by the Ginzburg-Landau phenomenological equation, but also recognizes that the fundamental entity is the paired electrons of the microscopic theory of Bardeen-Cooper-Schrieffer. Special features include a treatment of varied phenomena in a simple way which keeps the microscopic theory of BCS in the background, and a thorough discussion of magnetic properties of type II superconductors, including dissipative effects and the use of twisted multifilamentary wires. After treating the fundamentals of the Josephson effects, an analysis is given of how the popular RF-biased SQUID magnetometer works. An extensive discussion of fluctuation effects is also included. Major changes in this new edition include the following: new chapter on high temperature superconductors; updated and expanded discussion of the Josephson effect; new chapter on the Josephson effect in mesoscopic junctions; new chapter on nonequilibrium superconductivity; introductory treatment of electrodynamics in London theory level; and the deemphasis of nonlocal electrodynamics. The level of treatment presumes a background in Solid State Physics and Basic Quantum Mechanics and avoids the use of Thermal Green's Functions.

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones. It starts from the basic theory modeling many-body physics in Fe-superconductors and other multi-orbital materials and reaches up to the magnetic and Cooper pair fluctuations and nematic order. Finally, it offers a comprehensive overview of the most recent advancements in the experimental investigations of iron based superconductors.

AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of--and latest developments in--transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

This thesis presents the first comprehensive analysis of quantum cascade laser nonlinear dynamics and includes the first observation of a temporal chaotic behavior in quantum cascade lasers. It also provides the first analysis of optical instabilities in the mid-infrared range. Mid-infrared quantum cascade lasers are unipolar semiconductor lasers, which have become widely used in applications such as gas spectroscopy, free-space communications or optical countermeasures. Applying external perturbations such as optical feedback or optical injection leads to a strong modification of the quantum cascade laser properties. Optical feedback impacts the static properties of mid-infrared Fabry-Perot and distributed feedback quantum cascade lasers, inducing power increase; threshold reduction; modification of the optical spectrum, which can become either single- or multimode; and enhanced beam quality in broad-area transverse multimode lasers. It also leads to a different dynamical behavior, and a quantum cascade laser subject to optical feedback can oscillate periodically or even become chaotic. A quantum cascade laser under external control could therefore be a source with enhanced properties for the usual mid-infrared applications, but could also address new applications such as tunable photonic oscillators, extreme events generators, chaotic Light Detection and Ranging (LIDAR), chaos-based secured communications or unpredictable countermeasures.

This book introduces electric circuits with variable loads and voltage regulators. It allows to define invariant relationships for various parameters of regime and circuit sections and to prove the concepts characterizing these circuits. The book presents the fundamentals of electric circuits and develops circuit theorems. Generalized equivalent circuits are introduced. Projective geometry is used for the interpretation of changes of operating regime parameters. Expressions of normalized regime parameters and their changes are presented. Convenient formulas for the calculation of currents are given. Parallel voltage sources and the cascade connection of multi-port networks are described. The two-value voltage regulation characteristics of loads with limited power of voltage source is considered. This second edition is extended and contains additional chapters on circuits with non-linear regulation curves, circuits with non-linear load characteristics, concepts of power-source and power-load elements with two-valued characteristics, quasi-resonant voltage converters with self-limitation of current as well as the similarity of characteristics of converters and electronic devices. This book is useful to engineers, researchers and graduate students who are interested in the basic electric circuit theory and the regulation and monitoring of power supply systems.

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices, which was conceived as a major contribution to large-scale efforts to foster Indian research and development in the field in close collaboration with the community of non-resident Indian researchers from all over the world. The research articles collected in this volume - selected from among the submissions for their intrinsic quality and originality, as well as for their potential value for further collaborations - document and report on a wide range of recent and significant results for various applications and scientific developments in the areas of Materials and Devices. The technical sessions covered include photovoltaics and energy storage, semiconductor materials and devices, sensors, smart and polymeric materials, optoelectronics, nanotechnology and nanomaterials, MEMS and NEMS, as well as emerging technologies.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.

Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline) semiconductors focus, as a rule, on either physics of materials or physics of devices that are based on these materials. This book connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials. Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structures of carbon-based amorphous and nanocomposite films and atomic and electronic structures of organic semiconductors.

Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today's world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p--n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.

This book covers the state of the art in the theoretical framework, computational modeling, and the fabrication and characterization of nanoelectronics devices. It addresses material properties, device physics, circuit analysis, system design, and a range of applications. A discussion on the nanoscale fabrication, characterization and metrology is also included. The book offers a valuable resource for researchers, graduate students, and senior undergraduate students in engineering and natural sciences, who are interested in exploring nanoelectronics from materials, devices, systems, and applications perspectives.

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

Power Semiconductor Devices Theory and Applications VA-t???zslav Benda Czech Technical University, Prague, Czech Republic John Gowar Duncan A. Grant University of Bristol, UK Recent advances in robotics, automatic control and power conditioning systems have prompted research into increasingly sophisticated power semiconductor devices. This cutting-edge text explores the design, physical processes and applications performance of current power semiconductor devices. The extensive scope covers the complete range of discrete and integrated devices now available. Features include:
* Use of physical models to explain the device structures and functions without complicated mathematical techniques
* Explanation of the structure, function, characteristics and features of the most important discrete and integrated power devices
* Demonstration of the influence of construction and technological parameters on important device characteristics
* Sections on power modules and conditions for reliable operation plus a look at future materials and devices
This valuable reference encompassing the structure, operation and application of power semiconductor devices will benefit both practising electronics engineers and students of power electronics.

This book will address the application of gas phase thin film methods, including techniques such as evaporation, sputtering, CVD, and ALD to the synthesis of materials on nanostructured and high aspect-ratio high surface area materials. We have chosen to introduce these topics and the different application fields from a chronological perspective: we start with the early concepts of step coverage and later conformality in semiconductor manufacturing, and how later on the range of application branched out to include others such as energy storage, catalysis, and more broadly nanomaterials synthesis. The book will describe the ballistic and continuum descriptions of gas transport on nanostructured materials and then will move on to incorporate the impact of precursor-surface interaction. We will finally conclude approaching the subjects of feature shape evolution and the connection between nano and reactor scales and will briefly present different advanced algorithms that can be used to effectively compute particle transport, in some cases borrowing from other disciplines such as radiative heat transfer. The book gathers in a single place information scattered over thirty years of scientific research, including the most recent results in the field of Atomic Layer Deposition. Besides a mathematical description of the fundamentals of thin film growth in nanostructured materials, it includes analytic expressions and plots that can be used to predict the growth using gas phase synthesis methods in a number of ideal approximations. The focus on the fundamental aspects over particular processes will broaden the appeal and the shelf lifetime of this book. The reader of this book will gain a thorough understanding on the coating of high surface area and nanostructured materials using gas phase thin film deposition methods, including the limitations of each technique. Those coming from the theoretical side will gain the knowledge required to model the growth process, while those readers more interested in the process development will gain the theoretical understanding will be useful for process optimization.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch–De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree–Fock equations, and Landau’s Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg–Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov’s flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

This thesis describes the construction of a rotatable spin-polarized electron source and its use in spin- and angle-resolved inverse photoemission to investigate the unoccupied electron states of Tl/Si(111)-(1x1) with special emphasis on their spin texture. Towards more efficient electronics - with the electron spin as information carrier: This motto is the motivation for numerous studies in solid state physics that deal with electron states whose spin degeneracy is lifted by spin-orbit interaction. This thesis addresses the spin-orbit-induced spin textures in momentum space in the surface electronic structure of a prototypical Rashba-type hybrid system: heavy metal thallium on semiconducting silicon. For Tl/Si(111)-(1x1), the thallium adlayer provides surface states with strong spin-orbit interaction and peculiar spin-orbit-induced spin textures: spin rotations and spin chirality in momentum space for unoccupied surface states with giant spin splittings. Almost completely out-of-plane spin-polarized valleys in the vicinity of the Fermi level are identified. As the valley polarization is oppositely oriented at specific points in momentum space, backscattering should be strongly suppressed in this system.

This book presents the basics and applications of superconducting magnets. It explains the phenomenon of superconductivity, theories of superconductivity, type II superconductors and high-temperature cuprate superconductors. The main focus of the book is on the application to superconducting magnets to accelerators and fusion reactors and other applications of superconducting magnets. The thermal and electromagnetic stability criteria of the conductors and the present status of the fabrication techniques for future magnet applications are addressed. The book is based on the long experience of the author in studying superconducting materials, building magnets and numerous lectures delivered to scholars. A researcher and graduate student will enjoy reading the book to learn various aspects of magnet applications of superconductivity. The book provides the knowledge in the field of applied superconductivity in a comprehensive way.

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.