This book summarizes the current knowledge of two-dimensional oxide materials. The fundamental properties of 2-D oxide systems are explored in terms of atomic structure, electronic behavior and surface chemistry. The concept of polarity in determining the stability of 2-D oxide layers is examined, charge transfer effects in ultrathin oxide films are reviewed as well as the role of defects in 2-D oxide films. The novel structure concepts that apply in oxide systems of low dimensionality are addressed, and a chapter giving an overview of state-of-the-art theoretical methods for electronic structure determination of nanostructured oxides is included. Special emphasis is given to a balanced view from the experimental and the theoretical side. Two-dimensional materials, and 2-D oxides in particular, have outstanding behavior due to dimensionality and proximity effects. Several chapters treat prototypical model systems as illustrative examples to discuss the peculiar physical and chemical properties of 2-D oxide systems. The chapters are written by renowned experts in the field.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

The science and technology related to semiconductors have received significant attention for applications in various fields including microelectronics, nanophotonics, and biotechnologies. Understanding of semiconductors has advanced to such a level that we are now able to design novel system complexes before we go for the proof-of-principle experimental demonstration. This book explains the experimental setups for optical spectral analysis of semiconductors and describes the experimental methods and the basic quantum mechanical principles underlying the fast-developing nanotechnology for semiconductors. Further, it uses numerous case studies with detailed theoretical discussions and calculations to demonstrate the data analysis. Covering structures ranging from bulk to the nanoscale, it examines applications in the semiconductor industry and biomedicine. Starting from the most basic physics of geometric optics, wave optics, quantum mechanics, solid-state physics, it provides a self-contained resource on the subject for university undergraduates. The book can be further used as a toolbox for researching and developing semiconductor nanotechnology based on spectroscopy.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

This book is a wide-ranging survey of the physics of out-of-equilibrium systems of correlated electrons, ranging from the theoretical, to the numerical, computational and experimental aspects. It starts from basic approaches to non-equilibrium physics, such as the mean-field approach, then proceeds to more advanced methods, such as dynamical mean-field theory and master equation approaches. Lastly, it offers a comprehensive overview of the latest advances in experimental investigations of complex quantum materials by means of ultrafast spectroscopy.

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones. It starts from the basic theory modeling many-body physics in Fe-superconductors and other multi-orbital materials and reaches up to the magnetic and Cooper pair fluctuations and nematic order. Finally, it offers a comprehensive overview of the most recent advancements in the experimental investigations of iron based superconductors.

This thesis presents the first comprehensive analysis of quantum cascade laser nonlinear dynamics and includes the first observation of a temporal chaotic behavior in quantum cascade lasers. It also provides the first analysis of optical instabilities in the mid-infrared range. Mid-infrared quantum cascade lasers are unipolar semiconductor lasers, which have become widely used in applications such as gas spectroscopy, free-space communications or optical countermeasures. Applying external perturbations such as optical feedback or optical injection leads to a strong modification of the quantum cascade laser properties. Optical feedback impacts the static properties of mid-infrared Fabry-Perot and distributed feedback quantum cascade lasers, inducing power increase; threshold reduction; modification of the optical spectrum, which can become either single- or multimode; and enhanced beam quality in broad-area transverse multimode lasers. It also leads to a different dynamical behavior, and a quantum cascade laser subject to optical feedback can oscillate periodically or even become chaotic. A quantum cascade laser under external control could therefore be a source with enhanced properties for the usual mid-infrared applications, but could also address new applications such as tunable photonic oscillators, extreme events generators, chaotic Light Detection and Ranging (LIDAR), chaos-based secured communications or unpredictable countermeasures.

This thesis elucidates electron correlation effects in topological matter whose electronic states hold nontrivial topological properties robust against small perturbations. In addition to a comprehensive introduction to topological matter, this thesis provides a new perspective on correlated topological matter. The book comprises three subjects, in which electron correlations in different forms are considered. The first focuses on Coulomb interactions for massless Dirac fermions. Using a perturbative approach, the author reveals emergent Lorentz invariance in a low-energy limit and discusses how to probe the Lorentz invariance experimentally. The second subject aims to show a principle for synthesizing topological insulators with common, light elements. The interplay between the spin-orbit interaction and electron correlation is considered, and Hund's rule and electron filling are consequently found to play a key role for a strong spin-orbit interaction important for topological insulators. The last subject is classification of topological crystalline insulators in the presence of electron correlation. Unlike non-interacting topological insulators, such two- and three-dimensional correlated insulators with mirror symmetry are demonstrated to be characterized, respectively, by the Z4 and Z8 group by using the bosonization technique and a geometrical consideration.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

This book introduces electric circuits with variable loads and voltage regulators. It allows to define invariant relationships for various parameters of regime and circuit sections and to prove the concepts characterizing these circuits. The book presents the fundamentals of electric circuits and develops circuit theorems. Generalized equivalent circuits are introduced. Projective geometry is used for the interpretation of changes of operating regime parameters. Expressions of normalized regime parameters and their changes are presented. Convenient formulas for the calculation of currents are given. Parallel voltage sources and the cascade connection of multi-port networks are described. The two-value voltage regulation characteristics of loads with limited power of voltage source is considered. This second edition is extended and contains additional chapters on circuits with non-linear regulation curves, circuits with non-linear load characteristics, concepts of power-source and power-load elements with two-valued characteristics, quasi-resonant voltage converters with self-limitation of current as well as the similarity of characteristics of converters and electronic devices. This book is useful to engineers, researchers and graduate students who are interested in the basic electric circuit theory and the regulation and monitoring of power supply systems.

The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book proposes a thorough introduction for a varied audience. The reader will master London theory and the Pippard equations, and go on to understand type I and type II superconductors (their thermodynamics, magnetic properties, vortex dynamics, current transport...), Cooper pairs and the results of BCS theory. By studying coherence and flux quantization he or she will be lead to the Josephson effect which, with the SQUID, is a good example of the applications. The reader can make up for any gaps in his knowledge with the use of the appendices, follow the logic behind each model, and assimilate completely the underlying concepts. Approximately 250 illustrations help in developing a thorough understanding. This volume is aimed towards masters and doctoral students, as well as advanced undergraduates, teachers and researchers at all levels coming from a broad range of subjects (chemistry, physics, mechanical and electrical engineering, materials science...). Engineers working in industry will have a useful introduction to other more applied or specialized material. Philippe Mangin is emeritus professor of physics at Mines Nancy Graduate School of Science, Engineering and Management of the University of Lorraine, and researcher at the Jean Lamour Institute in France. He is the former director of both the French neutron scattering facility, Leon Brillouin Laboratory in Orsay, and the Material Physics Laboratory in Nancy, and has taught superconductivity to a broad audience, in particular to engineering students. Remi Kahn is a retired senior research scientist of the French Alternative Energies and Atomic Energy Commission (CEA-Saclay). He worked at the Leon Brillouin Laboratory and was in charge of the experimental areas of INB 101 (the Orphee research reactor). This work responded to the need to bring an accessible account suitable for a wide spectrum of scientists and engineers.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices, which was conceived as a major contribution to large-scale efforts to foster Indian research and development in the field in close collaboration with the community of non-resident Indian researchers from all over the world. The research articles collected in this volume - selected from among the submissions for their intrinsic quality and originality, as well as for their potential value for further collaborations - document and report on a wide range of recent and significant results for various applications and scientific developments in the areas of Materials and Devices. The technical sessions covered include photovoltaics and energy storage, semiconductor materials and devices, sensors, smart and polymeric materials, optoelectronics, nanotechnology and nanomaterials, MEMS and NEMS, as well as emerging technologies.

This book presents the basics and applications of photonic materials. It focuses on the utility of these devices for sensing, biosensing, and displays. The book includes fundamental aspects with a particular focus on the application of photonic materials. The field of photonic materials is both a burgeoning, and mature field. There are new advances being made on a daily basis, all based on the fundamental roots set by work by those like Ozin, Thomas, Asher, and others.

Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline) semiconductors focus, as a rule, on either physics of materials or physics of devices that are based on these materials. This book connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials. Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structures of carbon-based amorphous and nanocomposite films and atomic and electronic structures of organic semiconductors.

Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today's world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p--n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.

This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

This book covers the state of the art in the theoretical framework, computational modeling, and the fabrication and characterization of nanoelectronics devices. It addresses material properties, device physics, circuit analysis, system design, and a range of applications. A discussion on the nanoscale fabrication, characterization and metrology is also included. The book offers a valuable resource for researchers, graduate students, and senior undergraduate students in engineering and natural sciences, who are interested in exploring nanoelectronics from materials, devices, systems, and applications perspectives.

Power Semiconductor Devices Theory and Applications VA-t???zslav Benda Czech Technical University, Prague, Czech Republic John Gowar Duncan A. Grant University of Bristol, UK Recent advances in robotics, automatic control and power conditioning systems have prompted research into increasingly sophisticated power semiconductor devices. This cutting-edge text explores the design, physical processes and applications performance of current power semiconductor devices. The extensive scope covers the complete range of discrete and integrated devices now available. Features include:
* Use of physical models to explain the device structures and functions without complicated mathematical techniques
* Explanation of the structure, function, characteristics and features of the most important discrete and integrated power devices
* Demonstration of the influence of construction and technological parameters on important device characteristics
* Sections on power modules and conditions for reliable operation plus a look at future materials and devices
This valuable reference encompassing the structure, operation and application of power semiconductor devices will benefit both practising electronics engineers and students of power electronics.

This book will address the application of gas phase thin film methods, including techniques such as evaporation, sputtering, CVD, and ALD to the synthesis of materials on nanostructured and high aspect-ratio high surface area materials. We have chosen to introduce these topics and the different application fields from a chronological perspective: we start with the early concepts of step coverage and later conformality in semiconductor manufacturing, and how later on the range of application branched out to include others such as energy storage, catalysis, and more broadly nanomaterials synthesis. The book will describe the ballistic and continuum descriptions of gas transport on nanostructured materials and then will move on to incorporate the impact of precursor-surface interaction. We will finally conclude approaching the subjects of feature shape evolution and the connection between nano and reactor scales and will briefly present different advanced algorithms that can be used to effectively compute particle transport, in some cases borrowing from other disciplines such as radiative heat transfer. The book gathers in a single place information scattered over thirty years of scientific research, including the most recent results in the field of Atomic Layer Deposition. Besides a mathematical description of the fundamentals of thin film growth in nanostructured materials, it includes analytic expressions and plots that can be used to predict the growth using gas phase synthesis methods in a number of ideal approximations. The focus on the fundamental aspects over particular processes will broaden the appeal and the shelf lifetime of this book. The reader of this book will gain a thorough understanding on the coating of high surface area and nanostructured materials using gas phase thin film deposition methods, including the limitations of each technique. Those coming from the theoretical side will gain the knowledge required to model the growth process, while those readers more interested in the process development will gain the theoretical understanding will be useful for process optimization.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.