Silicon photonics uses chip-making techniques to fabricate photonic circuits. The emerging technology is coming to market at a time of momentous change. The need of the Internet content providers to keep scaling their data centers is becoming increasing challenging, the chip industry is facing a future without Moore's law, while telcos must contend with a looming capacity crunch due to continual traffic growth. Each of these developments is significant in its own right. Collectively, they require new thinking in the design of chips, optical components, and systems. Such change also signals new business opportunities and disruption. Notwithstanding challenges, silicon photonics' emergence is timely because it is the future of several industries. For the optical industry, the technology will allow designs to be tackled in new ways. For the chip industry, silicon photonics will become the way of scaling post-Moore's law. New system architectures enabled by silicon photonics will improve large-scale computing and optical communications. Silicon Photonics: Fueling the Next Information Revolution outlines the history and status of silicon photonics. The book discusses the trends driving the datacom and telecom industries, the main but not the only markets for silicon photonics. In particular, developments in optical transport and the data center are discussed as are the challenges. The book details the many roles silicon photonics will play, from wide area networks down to the chip level. Silicon photonics is set to change the optical components and chip industries; this book explains how.

This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires, nanobelts, nanoflowers, nanoribbons and more).

The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important properties and their applications in different diverging fields like photovoltaics, hydrogen production, theromelectrics, lithium battery, energy storage, photocatalysis, sensors.

An important reference source for students, scientists, engineers, researchers and industrialists working on nanomaterials-based energy aspects associated with chemistry, physics, materials science, electrical engineering, energy science and technology, and environmental science.

This book presents the mechanics of piezoelectric semiconductor structures where the main electromechanical coupling of interest is the interaction between mechanical fields and semiconduction. This volume stands as the first full book treatment of this multi-physical subject from the mechanics angle. The analysis of piezoelectric semiconductor structures and devices is an emerging and rapidly growing interdisciplinary area involving materials, electronics, and solid mechanics. It has direct applications in the new area of piezotronics and piezo-phototronics. The book is theoretical, beginning with a phenomenological framework and progressing to include solutions to problems fundamental to the theory and application. Dr. Yang illustrates how in piezoelectric semiconductors, mechanical fields interact with semiconduction through the piezoelectrically produced electric fields by mechanical loads. This provides the foundation of piezotronic and piezo-phototronic devices in which semiconduction is induced, affected, manipulated, or controlled by mechanical fields. Also discussing composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors as well as thermal effects, the book is an ideal basic reference on the topic for researchers.

This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures - their optical and electrical properties - are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure-property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

Comprehensive coverage of organic electronics, including fundamental theory, basic properties, characterization methods, device physics, and future trends Organic semiconductor materials have vast commercial potential for a wide range of applications, from self-emitting OLED displays and solid-state lighting to plastic electronics and organic solar cells. As research in organic optoelectronic devices continues to expand at an unprecedented rate, organic semiconductors are being applied to flexible displays, biosensors, and other cost-effective green devices in ways not possible with conventional inorganic semiconductors. Organic Semiconductors for Optoelectronics is an up-to-date review of the both the fundamental theory and latest research and development advances in organic semiconductors. Featuring contributions from an international team of experts, this comprehensive volume covers basic properties of organic semiconductors, characterization techniques, device physics, and future trends in organic device development. Detailed chapters provide key information on the device physics of organic field-effect transistors, organic light-emitting diodes, organic solar cells, organic photosensors, and more. This authoritative resource: Provides a clear understanding of the optoelectronic properties of organic semiconductors and their influence to overall device performance Explains the theories behind relevant mechanisms in organic semiconducting materials and in organic devices Discusses current and future trends and challenges in the development of organic optoelectronic devices Reviews electronic properties, device mechanisms, and characterization techniques of organic semiconducting materials Covers theoretical concepts of optical properties of organic semiconductors including fluorescent, phosphorescent, and thermally-assisted delayed fluorescent emitters An important new addition to the Wiley Series in Materials for Electronic & Optoelectronic Applications, Organic Semiconductors for Optoelectronics bridges the gap between advanced books and undergraduate textbooks on semiconductor physics and solid-state physics. It is essential reading for academic researchers, graduate students, and industry professionals involved in organic electronics, materials science, thin film devices, and optoelectronics research and development.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schroedinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

Effects of many-body interactions and superconducting correlations have become central questions in the quantum transport community. While most previous works investigating current fluctuations in nanodevices have been restricted to the stationary regime, Seoane's thesis extends these studies to the time domain. It provides relevant information about the time onset of electronic correlations mediated by interactions and superconductivity. This knowledge is essential for the development of fast electronic devices, as well as novel applications requiring fast manipulations, such as quantum information processing. In addition, the thesis establishes contact with issues of broad current interest such as non-equilibrium quantum phase transitions.

This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This book focuses on the thermophysical properties of Ge-Sb-Te alloys, which are the most widely used phase change materials, and the technique for measuring them. Describing the measuring procedure and parameter calibration in detail, it provides readers with an accurate method for determining the thermophysical properties of phase change materials and other related materials. Further, it discusses combining thermal and electrical conductivity data to analyze the conduction mechanism, allowing readers to gain an understanding of phase change materials and PCM industry simulation.

This book addresses the rapidly developing class of solar cell materials and designed to provide much needed information on the fundamental principles of these materials, together with how these are employed in photovoltaic applications. A special emphasize have been given for the space applications through study of radiation tolerant solar cells. This book present a comprehensive research outlining progress on the synthesis, fabrication and application of solar cells from fundamental to device technology and is helpful for graduate students, researchers, and technologists engaged in research and development of materials.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.

This book studies the fundamental aspects of many-body physics in quantum systems open to an external world. Recent remarkable developments in the observation and manipulation of quantum matter at the single-quantum level point to a new research area of open many-body systems, where interactions with an external observer and the environment play a major role. The first part of the book elucidates the influence of measurement backaction from an external observer, revealing new types of quantum critical phenomena and out-of-equilibrium dynamics beyond the conventional paradigm of closed systems. In turn, the second part develops a powerful theoretical approach to study the in- and out-of-equilibrium physics of an open quantum system strongly correlated with an external environment, where the entanglement between the system and the environment plays an essential role. The results obtained here offer essential theoretical results for understanding the many-body physics of quantum systems open to an external world, and can be applied to experimental systems in atomic, molecular and optical physics, quantum information science and condensed matter physics.

This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current-reverse bias voltage curves of their 10 m devices at a temperature of 30K, as well as the dark current-temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 m growth. The resulting 13 m arrays are being considered by a number of ground-based astronomy research groups.

This thesis introduces a systematic study on Second Generation (2G) High Temperature Superconductors (HTS), covering a novel design of an advanced medical imaging device using HTS, and an in-depth investigation on the losses of HTS. The text covers the design and simulation of a superconducting Lorentz Force Electrical Impedance Tomography. This is potentially a significant medical device that is more efficient and compact than an MRI, and is capable of detecting early cancer, as well as other pathologies such stroke and internal haemorrhages. It also presents the information regarding the fundamental physics of superconductivity, concentrating on the AC losses in superconducting coils and tapes. Overall, the thesis signifies an important contribution to the investigation of High Temperature Superconductors. This thesis will be beneficial to the development of advanced superconducting applications in healthcare as well as more broadly in electrical and energy systems.

This book deals with mathematical modeling, namely, it describes the mathematical model of heat transfer in a silicon cathode of small (nano) dimensions with the possibility of partial melting taken into account. This mathematical model is based on the phase field system, i.e., on a contemporary generalization of Stefan-type free boundary problems. The approach used is not purely mathematical but is based on the understanding of the solution structure (construction and study of asymptotic solutions) and computer calculations. The book presents an algorithm for numerical solution of the equations of the mathematical model including its parallel implementation. The results of numerical simulation concludes the book. The book is intended for specialists in the field of heat transfer and field emission processes and can be useful for senior students and postgraduates.

This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Quantum dots are nanometer-size semiconductor structures, and represent one of the most rapidly developing areas of current semiconductor research as increases in the speed and decreases in the size of semiconductor devices become more important. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. This important new reference book focuses on the key phenomena and principles. Chapter 1 provides a brief account of the history of quantum dots, whilst the second chapter surveys the various fabrication techniques used in the past two decades, and introduces the concept of self-organized growth. This topic is expanded in the following chapter, which presents a broad review of self-organization phenomena at surfaces of crystals. Experimental results on growth of quantum dot structures in many different systems and on their structural characterization are presented in Chapter 4. Basic properties of the dots relate to their geometric structure and chemical composition. Numerical modeling of the electronic and optical properties of real dots is presented in Chapter 5, together with general theoretical considerations on carrier capture, relaxation, recombination and properties of quantum dot lasers. Chapters 6 and 7 summarize experimental results on electronic, optical and electrical properties. The book concludes by disoussing highly topical results on quantum-dot-based photonic devices — mainly quantum dot lasers. Quantum Dot Heterostructures is written by some of the key researchers who have contributed significantly to the development of the field, and have pioneered both the theoretical understanding of quantum dot related phenomena and quantum dot lasers. It is of great interest to graduate and postgraduate students, and to researchers in semiconductor physics and technology and optoelectronics.

Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.SOI Circuit Design Concepts first introduces the student or practising engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches is also described.SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.

Rudolf P. Huebener presents the field of superconductivity research in a clear and compact way. He vividly describes how this area has developed in many directions since the discovery of superconductivity more than 100 years ago. This concerns materials, experiments on the physical principles, theoretical understanding and technical applications. Among other things, the essential deals with the Meissner-Ochsenfeld effect, magnetic flux quantization, the Josephson effect, the BCS theory and high-temperature superconductivity. This Springer essential is a translation of the original German 1st edition essentials, Geschichte und Theorie der Supraleiter by Rudolf P. Huebener, published by Springer Fachmedien Wiesbaden GmbH, part of Springer Nature in 2017. The translation was done with the help of artificial intelligence (machine translation by the service DeepL.com). A subsequent human revision was done primarily in terms of content, so that the book will read stylistically differently from a conventional translation. Springer Nature works continuously to further the development of tools for the production of books and on the related technologies to support the authors.

Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.

Gain complete understanding of electronic systems and their constituent parts. From the origins of the semiconductor industry right up until today, this book serves as a technical primer to semiconductor technology. Spanning design and manufacturing to the basic physics of electricity, it provides a comprehensive base of understanding from transistor to iPhone. Melding an accessible, conversational style with over 100 diagrams and illustrations, Understanding Semiconductors provides clear explanations of technical concepts going deep enough to fully explain key vernacular, mechanisms, and basic processes, without getting lost in the supporting theories or the theories that support the supporting theories. Concepts are tethered to the real world with crisp analysis of industry dynamics and future trends. As a break from the straight-ahead scientific concepts that keep the world of semiconductors spinning, Understanding Semiconductors is liberally sprinkled with apt analogies that elucidate difficult concepts. For example, when describing the relationship between voltage, current, power, and the flow of electricity through an electronic system, the book draws a parallel to a hot shower and the water utility system. Most of these are paired with clear visuals, giving you the best chance possible to absorb the concept at hand before moving on to the next topic. Whether you're narrowly technical or don't know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource. What You'll Learn: Charge, Electricity, and Basic Physics What are Semiconductors The Semiconductor Value Chain and Design Trade-Offs Transistors and Other Common Circuit Building Blocks Semiconductor Design from Concept to Tapeout Wafer Fabrication and Semiconductor Manufacturing Process Integrated Circuit (IC) Packaging and Signal & Power Integrity (SIPI) Common Circuits and System Components RF and Wireless Technologies System Architecture and Integration The Semiconductor Industry - Challenges, History, and Trends The Future of Semiconductors and Electronic Systems Who This Book Is For: People working directly in the semiconductor, electronics, and hardware technologies fields or in supporting industries, hobbyists and new electrical engineering enthusiasts with minimal technical experience or pre-existing qualifications, and curious individuals interested in learning more about a fascinating area of technology. Though designed for a non- or semi-technical reader, engineers focused in one particular domain can also use this book to broaden their understanding in areas that aren't directly related to their core area of expertise.

Surface photovoltage (SPV) techniques provide information about photoactive materials with respect to charge separation in space. This book aims to share experience in measuring and analyzing SPV signals and addresses researchers and developers interested in learning more about and in applying SPV methods. For this purpose, basics about processes in photoactive materials and principles of SPV measurements are combined with examples from research and development over the last two decades.SPV measurements with Kelvin probes, fixed capacitors, electron beams and photoelectrons are explained. Details are given for continuous, modulated and transient SPV spectroscopy. Simulation principles of SPV signals by random walks are introduced and applied for small systems. Application examples are selected for the characterization of silicon surfaces, gallium arsenide layers, electronic states in colloidal quantum dots, transport phenomena in metal oxides and local charge separation across photocatalytic active crystallites.