This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

The book comprises six chapters which deal with the critical currents and the ferromagnetism-superconductivity coexistence in high-Tc oxides. It begins by gathering key data for superconducting state and the fundamental properties of the conventional superconductors, followed by a recap of the basic theories of superconductivity. It then discusses the differences introduced by the structural anisotropy on the Ginzburg-Landau approach and the Lawrence-Doniach model before addressing the dynamics of vortices and the ferromagnetism-superconductivity coexistence in high-Tc oxides, and provides an outline of the pinning phenomena of vortices in these materials, in particular the pinning of vortices by the spins. It elucidates the methods to improve the properties of superconducting materials for industrial applications. This optimization aims at obtaining critical temperatures and densities of critical currents at the maximum level possible. Whereas the primary objective is the basic mechanisms pushing the superconductivity towards high temperatures, the secondary objective is to achieve a better understanding of the vortices pinning. This book is targeted at researchers and graduate students of fundamental and engineering sciences.

This book provides in-depth knowledge about the fundamental physical properties of bulk and low dimensional semiconductors (LDS). It also explains their applications to optoelectronic devices. The book incorporates two major themes. The first theme, starts from the fundamental principles governing the classification of solids according to their electronic properties and leads to a detailed analysis of electronic band structure and electronic transport in solids. It then focuses on the electronic transport and optical properties of semiconductor compounds, size quantization and the analysis of abrupt p-n junctions where a full analysis of the fundamental properties of intrinsic and doped semiconductors is given. The second theme is device-oriented. It aims to provide the reader with understanding of the design, fabrication and operation of optoelectronic devices based on novel semiconductor materials, such as high-speed photo detectors, light emitting diodes, multi-mode and single-mode lasers and high efficiency solar cells. The book appeals to researchers and high-level undergraduate students.

CMOS: Front-End Electronics for Radiation Sensors offers a comprehensive introduction to integrated front-end electronics for radiation detectors, focusing on devices that capture individual particles or photons and are used in nuclear and high energy physics, space instrumentation, medical physics, homeland security, and related fields. Emphasizing practical design and implementation, this book: Covers the fundamental principles of signal processing for radiation detectors Discusses the relevant analog building blocks used in the front-end electronics Employs systematically weak and moderate inversion regimes in circuit analysis Makes complex topics such as noise and circuit-weighting functions more accessible Includes numerical examples where appropriate CMOS: Front-End Electronics for Radiation Sensors provides specialized knowledge previously obtained only through the study of multiple technical and scientific papers. It is an ideal text for students of physics and electronics engineering, as well as a useful reference for experienced practitioners.

Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics.

Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations.

This is needed to answer such novel questions as:

Can one cool a drop of water by agitating an immersed nano-particle?

How does heat flow if a Brownian particle pulls a polymer chain?

Can one measure the free-energy of a system through a single realization of the associated stochastic process?

This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers.

It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.

"Semiconductor Devices: Physics and Technology, Third Edition" is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges. This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, focussing on the most recent developments in the methods. These developments largely stem from the requirements of new materials - such as nitrides, the plethora of oxide semiconductors, and 2-D semiconductors - whose physical characteristics and manufacturing challenges are much more complex than in conventional Si/Ge or GaAs. Each chapter addresses both the identification and quantification of the defects and their characteristics, and goes on to suggest routes for controlling the defects and hence the semiconductor properties. The book provides valuable information and solutions for scientists and engineers working with semiconductors and their applications in electronics.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bonding, heterostructure nanowires, and more. Basic knowledge on dislocations in semiconductors and innovative methods to eliminate threading dislocations are provided, and successful device applications are reviewed. It covers a variety of important semiconductor materials like SiGe, III-V including GaN and nano-wires; epitaxial methods like molecular beam epitaxy and metal organic vapor phase epitaxy; and devices like transistors and lasers etc.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

This open access book reports on cutting-edge electrical engineering and microelectronics solutions to foster and support digitalization in the semiconductor industry. Based on the outcomes of the European project iDev40, which were presented at the two first conference editions of the European Advances in Digital Transformation Conference (EADCT 2018 and EADTC 2019), the book covers different, multidisciplinary aspects related to digital transformation, including technological and industrial developments, as well as human factors research and applications. Topics include modeling and simulation methods in semiconductor operations, supply chain management issues, employee training methods and workplaces optimization, as well as smart software and hardware solutions for semiconductor manufacturing. By highlighting industrially relevant developments and discussing open issues related to digital transformation, the book offers a timely, practice-oriented guide to graduate students, researchers and professionals interested in the digital transformation of manufacturing domains and work environments.

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement.

Serious Competitors to Germanium and Silicon Radiation Detectors

Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolution of germanium by a factor of three. However, while compound semiconductors are routinely used at infrared and optical wavelengths, their development in other wavebands has been plagued by material and fabrication problems. So far, only a few have evolved sufficiently to produce commercial detection systems.

From Crystal Growth to Spectroscopic Performance

Bringing together information scattered across many disciplines, this book summarizes the current status of research in compound semiconductor radiation detectors. It examines the properties, growth, and characterization of compound semiconductors as well as the fabrication of radiation sensors, with particular emphasis on the X- and gamma-ray regimes. It explores the limitations of compound semiconductors and discusses current efforts to improve spectral performances, pointing to where future discoveries may lie.

A timely resource for the established researcher, this book serves as a comprehensive and illustrated reference on material science, crystal growth, metrology, detector physics, and spectroscopy. It can also be used as a textbook for those new to the field of compound semiconductors and their application to radiation detection and measurement.

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in superconductivity, the book includes contributions from many pioneers who are responsible for important steps forward in the field.

The text first discusses interesting stories of the discovery and gradual progress of theory and experimentation. Emphasizing key developments in the early 1950s and 1960s, the book looks at how superconductivity started to permeate society and how most of today s applications are based on the innovations of those years. It also explores the genuine revolution that occurred with the discovery of high temperature superconductors, leading to emerging applications in power storage and fusion reactors.

Superconductivity has become a vast field and this full-color book shows how far it has come in the past 100 years. Along with reviewing significant research and experiments, leading scientists share their insight and experiences working in this exciting and evolving area."

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter-in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems-and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Worldwide, many researchers are fascinated from the rich physics of se- conductor quantum dots (QDs) and their high potential for applications in photonics and quantum information technology. QDs are nanometer-sized three-dimensional structures which con?ne electrons and holes in dimensions oftheircorrespondingDeBrogliewavelength.Asaresult,theenergylevelsare quantized and for that reason they are also often referred as arti?cial atoms. Epitaxially grown QDs which are the subject of this book are embedded in a solid state semiconductor matrix and their size, shape, composition, and lo- tion can be tailored to a large extent by modern growth techniques. In QDs, excitations can involve more than a single carrier and interaction among the carriers modify or even dominate the emission properties. Therefore, a simple two-level description is only appropriate under certain well de?ned expe- mental conditions. Tremendous progress has been obtained in understanding their electronic, optical and spin properties mainly by performing single dot spectroscopy and using appropriate theoretical models.

This thesis describes a novel and robust way of deriving a Hamiltonian of the interacting boson model based on microscopic nuclear energy density functional theory. Based on the fact that the multi-nucleon induced surface deformation of finite nucleus can be simulated by effective boson degrees of freedom, observables in the intrinsic frame, obtained from self-consistent mean-field method with a microscopic energy density functional, are mapped onto the boson analog. Thereby, the excitation spectra and the transition rates for the relevant collective states having good symmetry quantum numbers are calculated by the subsequent diagonalization of the mapped boson Hamiltonian. Because the density functional approach gives an accurate global description of nuclear bulk properties, the interacting boson model is derived for various situations of nuclear shape phenomena, including those of the exotic nuclei investigated at rare-isotope beam facilities around the world. This work provides, for the first time, crucial pieces of information about how the interacting boson model is justified and derived from nucleon degrees of freedom in a comprehensive manner.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies.

The mid-infrared (2-10Am) spectral region is of enormous scientific and technological interest because it contains the strongest fingerprint absorption bands of a number of pollutant and toxic gases which require monitoring in a variety of different situations (e.g., oil-rigs, coal mines, landfill sites and car exhausts) and in concentrations, ranging from parts per billion to almost 100%. Organic liquids, narcotics and many biological and bio-medical analytes also have fingerprint absorptions in this spectral range. In addition, the atmospheric transmission window between 3 Am and 5 Am enables free-space optical communications, thermal imaging and the development of infrared counter-measures for "homeland security." However, many of these applications require technology based on un-cooled, efficient, inexpensive sources and detectors which are not yet available and so wide exploitation of this spectral range has yet to take place.

There is no doubt that the practical realisation of mid-infrared semiconductor lasers, LEDs and detectors which can operate at room temperature will transform them from a specialist research curiosity to a pervasive technology that will unlock a wide variety of applications. Many of the necessary developments depend on the ability to fabricate suitable high-quality epitaxial materials through the use of strained-layer engineering at the nanoscale and to manipulate the optoelectronic properties of the corresponding quantum device structures. There are a number of different materials, active region designs and device structures currently being investigated for both light sources and detectors. Many of the salient features together with recent progress ineach of these areas is presented in this text.

Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological advances in this rapidly developing area. It is divided into four parts. First, some of the basic physics and the main problems facing the device engineer (together with a comparison of possible solutions) are presented. Next, there is a consideration of the different types of lasers currently under development. For practical mid-infrared applications semiconductor lasers must operate at room temperature and several different approaches to achieve this, particularly within the difficult 3a "4 Am spectral region are discussed. Part III reviews recent work on light-emitting diodes and photodetectors and also deals with negative luminescence. The final part of the book is concerned with applications and highlights, once more, the diversity and technological importance of the mid-infrared spectral region.

The text has been produced by a world-wide authorship of experts in mid-infrared physics and technology, each working at the cutting edge in their own specialist area. Mid-infrared Semiconductor Optoelectronics will be an invaluable reference for researchers and graduate students drawn from backgrounds in physics, electronic and electrical engineering and materials science. Its breadth and thoroughness also make it an excellent starting point for further research and investigation.

A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.