This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices (ICRTMD 2019) held in India. It brings together academicians, scientists and industrialists from various fields for the establishment of enduring connections to solve the common global challenges across a number of disciplines. The conference provides a platform to tackle complex problems from a range of perspectives, thereby modeling integrated, solution-focused thinking and partnerships.

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

This open access book collects the contributions of the seventh school on Magnetism and Synchrotron Radiation held in Mittelwihr, France, from 7 to 12 October 2018. It starts with an introduction to the physics of modern X-ray sources followed by a general overview of magnetism. Next, light / matter interaction in the X-ray range is covered with emphasis on different types of angular dependence of X-ray absorption spectroscopy and scattering. In the end, two domains where synchrotron radiation-based techniques led to new insights in condensed matter physics, namely spintronics and superconductivity, are discussed. The book is intended for advanced students and researchers to get acquaintance with the basic knowledge of X-ray light sources and to step into synchrotron-based techniques for magnetic studies in condensed matter physics or chemistry.

This book discusses the development of Fano-based techniques and reveals the characteristic properties of various wave processes by studying interference phenomena. It explains that the interaction of discrete (localized) states with a continuum of propagation modes leads to Fano interference effects in transmission, and explores novel coherent effects such as bound states in the continuum accompanied by collapse of Fano resonance. Originating in atomic physics, Fano resonances have become one of the most appealing phenomena of wave scattering in optics, microwaves, and terahertz techniques. The generation of extremely strong and confined fields at a deep subwavelength scale, far beyond the diffraction limit, plays a central role in modern plasmonics, magnonics, and in photonic and metamaterial structures. Fano resonance effects take advantage of the coupling of these bound states with a continuum of radiative electromagnetic waves. With their unique physical properties and unusual combination of classical and quantum structures, Fano resonances have an application potential in a wide range of fields, from telecommunication to ultrasensitive biosensing, medical instrumentation and data storage. Including contributions by international experts and covering the essential aspects of Fano-resonance effects, including theory, modeling and design, proven and potential applications in practical devices, fabrication, characterization and measurement, this book enables readers to acquire the multifaceted understanding required for these multidisciplinary challenges.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts."

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investi

Drawn from the author's introductory course at the University of Orsay, Superconductivity of Metals and Alloys is intended to explain the basic knowledge of superconductivity for both experimentalists and theoreticians. These notes begin with an elementary discussion of magnetic properties of Type I and Type II superconductors. The microscopic theory is then built up in the Bogolubov language of self-consistent fields. This text provides the classic, fundamental basis for any work in the field of superconductivity.

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

Run-to-run (R2R) control is cutting-edge technology that allows modification of a product recipe between machine "runs," thereby minimizing process drift, shift, and variability-and with them, costs. Its effectiveness has been demonstrated in a variety of processes, such as vapor phase epitaxy, lithography, and chemical mechanical planarization. The only barrier to the semiconductor industry's widespread adoption of this highly effective process control is a lack of understanding of the technology. Run to Run Control in Semiconductor Manufacturing overcomes that barrier by offering in-depth analyses of R2R control.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

This book systematically describes free-standing films and self-supporting nanoarrays growing on rigid and flexible substrates, and discusses the numerous applications in electronics, energy generation and storage in detail. The chapters present the various fabrication techniques used for growing self-supporting materials on flexible and rigid substrates, and free-standing films composed of semiconductors, inorganic, polymer and carbon hybrid materials.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

This book is a compilation of research articles related to the application of organic semiconductor materials in the field of electronics such as field effect transistors, light emitting diodes and in harvesting solar energy via solar cells. Chapter 1 acquaints the reader with the progress made so far and future potential in the field of organic semiconductors highlighting their employment as organic light emitting diodes (OLEDs) for flexible electronics and lighting, as organic field effect transistors (OFETs) and as organic photovoltaics. In chapter 2, a novel technology of utilizing aluminum laminations as moisture barriers against ambient aggressors in order to enhance device performance, especially in organic solar cells and OLEDs has been demonstrated. Chapters 3-5 focus on the fabrication routes of organic electronics such as OFETs and organic solar cells. The further chapters of this book are broadly classified into three categories addressing the three key applications of these materials - OFETs, organic solar cells and OLEDs. In chapters 6-13, the various materials, their synthesis, properties, processing parameters and their application in OFETs has been illustrated. Application of OFETs in detecting blood gases such as ammonia has been shown in chapter 13. Chapters 14- focuses on critical light instability in CB/DIO processed PBDTTT-EFT:PC71BM organic photovoltaic devices". I strongly believe that this book will help students, engineers and researchers working in the field of electrical engineering, chemistry, physics and material science to build upon their existing knowledge. The collection of articles and review articles is upto date and the reader can keep themselves abreast with the latest developments in the field of organic semiconductors through this book.

This book presents selected peer-reviewed contributions from the 2019 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2019 (Hanoi, Vietnam, 7-10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical-mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices' performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

This book summarizes the current knowledge of two-dimensional oxide materials. The fundamental properties of 2-D oxide systems are explored in terms of atomic structure, electronic behavior and surface chemistry. The concept of polarity in determining the stability of 2-D oxide layers is examined, charge transfer effects in ultrathin oxide films are reviewed as well as the role of defects in 2-D oxide films. The novel structure concepts that apply in oxide systems of low dimensionality are addressed, and a chapter giving an overview of state-of-the-art theoretical methods for electronic structure determination of nanostructured oxides is included. Special emphasis is given to a balanced view from the experimental and the theoretical side. Two-dimensional materials, and 2-D oxides in particular, have outstanding behavior due to dimensionality and proximity effects. Several chapters treat prototypical model systems as illustrative examples to discuss the peculiar physical and chemical properties of 2-D oxide systems. The chapters are written by renowned experts in the field.

This volume contains most of the invited talks of the 2001 meeting of the Solid State Physics Section of the Deutsche Physikalische Gesellschaft held from March 26 to 30 in Hamburg, Germany. The topics covered reflect the present activities in this lively domain of modern physics and are thus supposed to flashlight the state-of-the-art in condensed matter physics in Germany in the year 2001.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics-semiconductors, with their variable densities and effective masses. The author develops Green's functions starting from equilibrium Green's functions and going through modern time-dependent approaches to non-equilibrium Green's functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

The Future of Semiconductor Oxides in Next-Generation Solar Cells begins with several chapters covering the synthesis of semiconductor oxides for NGSCs. Part II goes on to cover the types and applications of NGSCs currently under development, while Part III brings the two together, covering specific processing techniques for NGSC construction. Finally, Part IV discusses the stability of SO solar cells compared to organic solar cells, and the possibilities offered by hybrid technologies. This comprehensive book is an essential reference for all those academics and professionals who require thorough knowledge of recent and future developments in the role of semiconductor oxides in next generation solar cells.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry