The book is an expanded autobiography of the famous theoretical physicist Isaak Khalatnikov. He worked together with L.D. Landau at the Institute for Physical Problems lead by P.L. Kapitza. He is the co-author of L.D. Landau in a number of important works. They worked together in the frame of the so-called Nuclear Bomb Project. After the death of L.D. Landau, I.M. Khalatnikov initiated the establishment of the Institute for Theoretical Physics, named in honour of L.D. Landau, within the USSR Academy of Sciences. He headed this institute from the beginning as its Director. The institute inherited almost all traditions of the Landau scientific school and played a prominent role in the development of theoretical physics. So, this is a story about how the institute was created, how it worked, and about the life of the physicists in the "golden age" of the Soviet science. A separate chapter is devoted to todays life of the institute and the young generation of physicists working now in science. It is an historically interesting book on the development of Soviet and Russian science and presents the background of the Soviet nuclear bomb program in the cold war age. In war times, Khalatnikov was a chief of the military staff of nuclear research. He writes about the internal conditions of Soviet society, the way of operating of the Soviet authorities and ways for scientists to interact with them. It gives many interesting insights into the development of superconductivity and superfluidity. The book is written by the most experienced and best informed person among the few living Russian scientists in the environment of Landau. Many stories of the book were never published before and considered as "top secret".

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices (ICRTMD 2019) held in India. It brings together academicians, scientists and industrialists from various fields for the establishment of enduring connections to solve the common global challenges across a number of disciplines. The conference provides a platform to tackle complex problems from a range of perspectives, thereby modeling integrated, solution-focused thinking and partnerships.

This open access book collects the contributions of the seventh school on Magnetism and Synchrotron Radiation held in Mittelwihr, France, from 7 to 12 October 2018. It starts with an introduction to the physics of modern X-ray sources followed by a general overview of magnetism. Next, light / matter interaction in the X-ray range is covered with emphasis on different types of angular dependence of X-ray absorption spectroscopy and scattering. In the end, two domains where synchrotron radiation-based techniques led to new insights in condensed matter physics, namely spintronics and superconductivity, are discussed. The book is intended for advanced students and researchers to get acquaintance with the basic knowledge of X-ray light sources and to step into synchrotron-based techniques for magnetic studies in condensed matter physics or chemistry.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrodinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented."

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides readers through fundamental principles and focuses on crucial advances in making commercial use of silicon photonics a viable reality in the telecom and biomedical industries. Taking into account existing and anticipated industrial directions, the book balances coverage of theory and practical experimental research to explore solutions for obstacles to the viable commercialization of silicon photonics. The book's special features include: A section on silicon plasmonic waveguides Detailed coverage of novel III-V applications A chapter on 3D integration Discussion of applications for energy harvesting/photovoltaics This book reviews the most important technological trends and challenges. It presents topics involving major silicon photonics applications in telecommunications, high-power photonics, and biomedicine. It includes discussion of silicon plasmonic waveguides, piezoelectric tuning of silicon's optical properties, and applications of two-photon absorption. Expert authors with industry research experience examine the challenge of hybridizing III-V compound semiconductors on silicon to achieve monolithic light sources. They also address economic compatibility and heat dissipation issues in CMOS chips, challenges in designing electronic photonics in

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Theory of Superconductivity: From Weak to Strong Coupling leads the reader from basic principles through detailed derivations and a description of the many interesting phenomena in conventional and high-temperature superconductors. The book describes physical properties of novel superconductors, in particular, the normal state, superconducting critical temperatures and critical fields, isotope effects, normal and superconducting gaps, tunneling, angle-resolved photoemission, stripes, and symmetries. The book divides naturally into two parts. Part I introduces the phenomenology of superconductivity, the microscopic BCS theory, and its extension to the intermediate coupling regime. The first three chapters of this part cover generally accepted themes in the conventional theory of superconductivity and serve as a good introduction to the subject. Chapter 4 describes what happens to the conventional theory when the coupling between electrons becomes strong. Part II describes key physical properties of high-temperature superconductors and their theoretical interpretation. Alternative viewpoints are discussed, but the emphasis is placed on the bipolaron theory.

This book discusses the development of Fano-based techniques and reveals the characteristic properties of various wave processes by studying interference phenomena. It explains that the interaction of discrete (localized) states with a continuum of propagation modes leads to Fano interference effects in transmission, and explores novel coherent effects such as bound states in the continuum accompanied by collapse of Fano resonance. Originating in atomic physics, Fano resonances have become one of the most appealing phenomena of wave scattering in optics, microwaves, and terahertz techniques. The generation of extremely strong and confined fields at a deep subwavelength scale, far beyond the diffraction limit, plays a central role in modern plasmonics, magnonics, and in photonic and metamaterial structures. Fano resonance effects take advantage of the coupling of these bound states with a continuum of radiative electromagnetic waves. With their unique physical properties and unusual combination of classical and quantum structures, Fano resonances have an application potential in a wide range of fields, from telecommunication to ultrasensitive biosensing, medical instrumentation and data storage. Including contributions by international experts and covering the essential aspects of Fano-resonance effects, including theory, modeling and design, proven and potential applications in practical devices, fabrication, characterization and measurement, this book enables readers to acquire the multifaceted understanding required for these multidisciplinary challenges.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investi

This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts."

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

Drawn from the author's introductory course at the University of Orsay, Superconductivity of Metals and Alloys is intended to explain the basic knowledge of superconductivity for both experimentalists and theoreticians. These notes begin with an elementary discussion of magnetic properties of Type I and Type II superconductors. The microscopic theory is then built up in the Bogolubov language of self-consistent fields. This text provides the classic, fundamental basis for any work in the field of superconductivity.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

Three-volumes book "Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors" is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume "Photodetectors" of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

This book systematically describes free-standing films and self-supporting nanoarrays growing on rigid and flexible substrates, and discusses the numerous applications in electronics, energy generation and storage in detail. The chapters present the various fabrication techniques used for growing self-supporting materials on flexible and rigid substrates, and free-standing films composed of semiconductors, inorganic, polymer and carbon hybrid materials.

This book presents selected peer-reviewed contributions from the 2019 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2019 (Hanoi, Vietnam, 7-10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical-mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.