The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

This book will present the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronc semiconductor devices. The book chapters will be authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. The book will cover ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, and GaN/AlGaN GaAlN/AlGaInN and other nitride, and SiC hetero-structures; graded structures for distributed piezo-electric charge, electrical and electronic characterization of polarization charge and charge distribution by scanning-probe spectroscopies, gauge factors and strain effects.It also covers: polarization in extended defects and device effects; Piezo-electric strain/charge engineering and application to device design and processing: ohmic, and Shottky diodes, drift, diffusion, low and high field carrier dynamics in plane and normal to thin film and polarization engineered semiconductor hetero-structures. Polarization inclusion and utilization in design of sensors, microwave, low noise, and optoelectronic devices (HEMT, HBT, LED, Laser acoustic, chemical, optical and biological sensors) is also covered.

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.

Topological defects are generic in continuous media. In the relativistic quantum vacuum they are known as cosmic strings, in superconductors as quantized flux lines, and in superfluids, low-density atomic Bose-Einstein condensates and neutron stars as quantized vortex lines. This collection of articles by leading scientists presents a modern treatment of the physics of vortex matter, mainly applied to unconventional superconductors and superfluids but with extensions to other areas of physics.

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. "Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems" reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Electronics has become the largest industry, surpassing agriculture, auto, and heavy metal industries. It has become the industry of choice for a country to prosper, already having given rise to the phenomenal prosperity of Japan, Korea, Singapore, Hong Kong, and Ireland among others. At the current growth rate, total worldwide semiconductor sales will reach $300B by the year 2000. The key electronic technologies responsible for the growth of the industry include semiconductors, the packaging of semiconductors for systems use in auto, telecom, computer, consumer, aerospace, and medical industries, displays, magnetic, and optical storage as well as software and system technologies. There has been a paradigm shift, however, in these technologies, from mainframe and supercomputer applications at any cost, to consumer applications at approximately one-tenth the cost and size. Personal computers are a good example, going from $500IMIP when products were first introduced in 1981, to a projected $IIMIP within 10 years. Thin, light portable, user friendly and very low-cost are, therefore, the attributes of tomorrow's computing and communications systems. Electronic packaging is defined as interconnection, powering, cool ing, and protecting semiconductor chips for reliable systems. It is a key enabling technology achieving the requirements for reducing the size and cost at the system and product level."

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers. Content Level Research

This guide emphasizes jitter for time domain applications so that there is not a need to translate from frequency domain. This provides a more direct path to the results for designing in an application area where performance is specified in the time domain. The book includes classification of oscillator types and an exhaustive guide to existing research literature. It also includes classification of measurement techniques to help designers understand how the eventual performance of circuit design is verified.

This book discusses topics related to power electronics, especially electromagnetic transient analysis and control of high-power electronics conversion. It focuses on the re-evaluation of power electronics, transient analysis and modeling, device-based system-safe operating area, and energy balance-based control methods, and presenting, for the first time, numerous experimental results for the transient process of various real-world converters. The book systematically presents both theoretical analysis and practical applications. The first chapter discusses the structure and attributes of power electronics systems, highlighting the analysis and synthesis, while the second chapter explores the transient process and modeling for power electronics systems. The transient features of power devices at switching-on/off, transient conversion circuit with stray parameters and device-based system-safe operating area are described in the subsequent three chapters. The book also examines the measurement of transient processes, electromagnetic pulses and their series, as well as high-performance, closed-loop control, and expounds the basic principles and method of the energy-balanced control strategy. Lastly, it introduces the applications of transient analysis of typical power electronics systems. The book is valuable as a textbook for college students, and as a reference resource for electrical engineers as well as anyone working in the field of high-power electronics system.

The primary thrust of very large scale integration (VLS ) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS ) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS .

2 Homogeneous superconducting state 210 3 Superconducting phases with broken space symmetries 213 4 Flavor asymmetric quark condensates 219 5 Concluding remarks 221 Acknowledgments 222 References 223 Neutral Dense Quark Matter 225 Mei Huang and Igor Shovkovy 1 Introduction 225 2 Local charge neutrality: homogeneous phase 226 3 Global charge neutrality: mixed phase 234 4 Conclusion 238 References 238 Possibility of color magnetic superconductivity 241 Toshitaka Tatsumi, Tomoyuki Maruyama, and Eiji Nakano 1 Introduction 241 2 What is ferromagnetism in quark matter? 243 3 Color magnetic superconductivity 248 4 Chiral symmetry and magnetism 253 5 Summary and Concluding remarks 258 Acknowledgments 260 References 260 Magnetic Fields of Compact Stars with Superconducting Quark Cores 263 David M. Sedrakian, David Blaschke, and Karen M. Shahabasyan 1 Introduction 263 2 Free Energy 265 3 Ginzburg-Landau equations 267 4 Vortex Structure 269 5 Solution of Ginzburg-Landau Equations 271 6 The Magnetic Field Components 273 7 Summary 275 Acknowledgments 275 References 275 Thermal Color-superconducting Fluctuations in Dense Quark Matter 277 D. N.

The thesis by Merce Pacios exploits properties of carbon nanotubes to design novel nanodevices. The prominent electrochemical properties of carbon nanotubes are used to design diverse electrode configurations. In combination with the chemical properties and (bio)functionalization versatility, these materials prove to be very appropriate for the development of electrochemical biosensors. Furthermore, this work also evaluates the semiconductor character of carbon nanotubes (CNT) for sensor technology by using a field effect transistor configuration (FET). The CNT-FET device has been optimized for operating in liquid environments. These electrochemical and electronic CNT devices are highly promising for biomolecule sensing and for the monitoring of biological processes, which can in the future lead to applications for rapid and simple diagnostics in fields such as biotechnology, clinical and environmental research.

Metal-semiconductor nanostructures represent an important new class of materials employed in designing advanced optoelectronic and nanophotonic devices, such as plasmonic nanolasers, plasmon-enhanced light-emitting diodes and solar cells, plasmonic emitters of single photons, and quantum devices operating in infrared and terahertz domains. The combination of surface plasmon resonances in conducting structures, providing strong concentration of an electromagnetic optical field nearby, with sharp optical resonances in semiconductors, which are highly sensitive to external electromagnetic fields, creates a platform to control light on the nanoscale. The design of the composite metal-semiconductor system imposes the consideration of both the plasmonic resonances in metal and the optical transitions in semiconductors - a key issue being their resonant interaction providing a coupling regime. In this book the reader will find descriptions of electrodynamics of conducting structures, quantum physics of semiconductor nanostructures, and guidelines for advanced engineering of metal-semiconductor composites. These constituents form together the physical basics of the metal-semiconductor plasmonics, underlying many effective practical applications. The list of covered topics also includes the review of recent results, such as the achievement of a strong coupling regime, and the preservation of non-classical statistics of photons in plasmonic cavities combined with semiconductor nanostructures.

Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.

Historically, black body radiation in the tungsten filament lamp was our primary industrial means for producing 'artificial' light, as it replaced gas lamps. Solid state luminescent devices for applications ranging from lamps to displays have proliferated since then, particularly owing to the develop ment of semiconductors and phosphors. Our lighting products are now mostly phosphor based and this 'cold light' is replacing an increasing fraction of tungsten filament lamps. Even light emitting diodes now chal lenge such lamps for automotive brake lights. In the area of information displays, cathode ray tube phosphors have proved themselves to be outstandingly efficient light emitters with excellent colour capability. The current push for flat panel displays is quite intense, and much confusion exists as to where development and commercialization will occur most rapidly, but with the need for colour, it is now apparent that solid state luminescence will play a primary role, as gas phase plasma displays do not conveniently permit colour at the high resolution needed today. The long term challenge to develop electroluminescent displays continues, and high performance fluorescent lamps currently illuminate liquid crystal monochrome and colour displays. The development of tri component rare earth phosphors is of particular importance."

Thoroughly revised and updated, this highly successful textbook guides students through the analysis and design of transistor circuits. It covers a wide range of circuitry, both linear and switching.
Transistor Circuit Techniques: Discrete and Integrated provides students with an overview of fundamental qualitative circuit operation, followed by an examination of analysis and design procedure. It incorporates worked problems and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies, which further develop many of the circuit design techniques introduced in earlier chapters.
Part of the Tutorial Guides in Electronic Engineering series, this book is intended for first and second year undergraduate courses. A complete text on its own, it offers the added advantage of being cross-referenced to other titles in the series. It is an ideal textbook for both students and instructors.

The 2007 Spring Meeting of the Arbeitskreis Festk rperphysik was held in Regensburg, Germany, March 2007, in conjunction with the Deutsche Physikalische Gesellschaft. It was one of the largest physics meetings in Europe. The present volume 47 of the Advances in Solid State Physics contains written versions of a large number of the invited talks and gives an overview of the present status of solid state physics where low-dimensional systems are dominating.

The field of semiconductor nanostructures is of enormous and still-growing research interest. On one hand, they are already realized in mass products such as high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties such as many-particle interactions of electrons in reduced dimensions. This book bridges the gap between general semiconductor textbooks and research articles.

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.