This book features a systematic description of microelectronic device design ranging from the basics to current topics, such as low-power/ultralow-voltage designs including subthreshold current reduction, memory subsystem designs for modern DRAMs and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

Recent advances in semiconductor technology have made it possible to fabricate microcavity structures in which both photon fields and electron-hole pairs (or excitons) are confined in a small volume comparable to their wavelength. The radiative properties of the electron-hole pairs and excitons are modified owing to the drastic change in the structure of the electromagnetic-field modes. This book is the first to give a comprehensive account of the theory of semiconductor cavity quantum electrodynamics for such systems in the weak-coupling and strong-coupling regimes. The important concepts are presented, together with relevant, recent experimental results.

This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.

This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

Organic semiconductors offer unique characteristics which have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this emerging field by discussing both optically- and electrically-based sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques are also outlined.

Semiconductor Microchips and Fabrication Advanced and highly illustrated guide to semiconductor manufacturing from an experienced industry insider Semiconductor Microchips and Fabrication is a practical yet advanced book on the theory, design, and manufacturing of semiconductor microchips that describes the process using the principles of physics and chemistry, fills in the knowledge gaps for professionals and students who need to know how manufacturing equipment works, and provides valuable suggestions and solutions to many problems that students or engineers often encounter in semiconductor processing, including useful experiment results to help in process work. The explanation of the semiconductor manufacturing process, and the equipment needed, is carried out based on the machines that are used in clean rooms over the world so readers understand how they can use the equipment to achieve their design and manufacturing ambitions. Combining theory with practice, all descriptions are carried out around the actual equipment and processes by way of a highly visual text, with illustrations including equipment pictures, manufacturing process schematics, and structures of semiconductor microchips. Sample topics covered in Semiconductor Microchips and Fabrication include: An introduction to basic concepts, such as impedance mismatch from plasma machines and theories, such as energy bands and Clausius-Clapeyron equation Basic knowledge used in semiconductor devices and manufacturing machines, including DC and AC circuits, electric fields, magnetic fields, resonant cavity, and the components used in the devices and machines Transistor and integrated circuits, including bipolar transistors, junction field effect transistors, and metal-semiconductor field effect transistors The main processes used in the manufacturing of microchips, including lithography, metallization, reactive-ion etching (RIE), plasma-enhanced chemical vapor deposition (PECVD), thermal oxidation and implantation, and more The skills in the design and problem solving of processes, such as how to design a dry etching recipe, and how to solve the micro-grass problems in Bosch process Through Semiconductor Microchips and Fabrication, readers can obtain the fundamental knowledge and skills of semiconductor manufacturing, which will help them better understand and use semiconductor technology to improve their product quality or project research. Before approaching this text, readers should have basic knowledge of physics, chemistry, and circuitry.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

The quantum statistical properties of the light wave generated in a semiconductor laser or a light-emitting diode (LED) has been a field of intense research for more than a decade. This research monograph discusses recent research activities in nonclassical light generation based on semiconductor devices. This volume is composed of four major parts. The first discusses the generation of sub-shot-noise light in macroscopic pn junction light-emitting devices, including semiconductor laser and light-emitting diodes. The second part discusses the application of squeezed light in high-precision measurement, including spectroscopy and interferometry. The third part addresses the Coulomb blockade effect in a mesoscopic pn junction and the generation of single photon states. The last part covers the detection of single photons using a visible light photon counter.

This book bridges a gap between two major communities of Condensed Matter Physics, Semiconductors and Superconductors, that have thrived independently. Through an original perspective that their key particles, excitons and Cooper pairs, are composite bosons, the authors raise fundamental questions of current interest: how does the Pauli exclusion principle wield its power on the fermionic components of bosonic particles at a microscopic level and how this affects the macroscopic physics? What can we learn from Wannier and Frenkel excitons and from Cooper pairs that helps us understand "bosonic condensation" of composite bosons and its difference from Bose-Einstein condensation of elementary bosons? The authors start from solid mathematical and physical foundation to derive excitons and Cooper pairs. They further introduce Shiva diagrams as a graphic support to grasp the many-body physics induced by fermion exchange - a novel mechanism not visualized by standard Feynman diagrams. Advanced undergraduate or graduate students in physics with no prior background will benefit from this book. The developed concepts and methodology should also be useful to present researches on ultracold atomic gases, exciton-polaritons, and quantum information.

The unique electronic band structure of graphene gives rise to remarkable properties when in contact with a superconducting electrode. In this thesis two main aspects of these junctions are analyzed: the induced superconducting proximity effect and the non-local transport properties in multi-terminal devices. For this purpose specific models are developed and studied using Green function techniques, which allow us to take into account the detailed microscopic structure of the graphene-superconductor interface. It is shown that these junctions are characterized by the appearance of bound states at subgap energies which are localized at the interface region. Furthermore it is shown that graphene-supercondutor-graphene junctions can be used to favor the splitting of Cooper pairs for the generation of non-locally entangled electron pairs. Finally, using similar techniques the thesis analyzes the transport properties of carbon nanotube devices coupled with superconducting electrodes and in graphene superlattices.

Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interfacea "induced gap states (IFIGS) as a unifying theme, MAnch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Paulinga (TM)s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

This book is concerned with wafer fabrication and the factories that manufacture microprocessors and other integrated circuits. With the invention of the transistor in 1947, the world as we knew it changed. The transistor led to the microprocessor, and the microprocessor, the guts of the modern computer, has created an epoch of virtually unlimited information processing. The electronics and computer revolution has brought about, for better or worse, a new way of life. This revolution could not have occurred without wafer fabrication, and its associated processing technologies. A microprocessor is fabricated via a lengthy, highly-complex sequence of chemical processes. The success of modern chip manufacturing is a miracle of technology and a tribute to the hundreds of engineers who have contributed to its development. This book will delineate the magnitude of the accomplishment, and present methods to analyze and predict the performance of the factories that make the chips. The set of topics covered juxtaposes several disciplines of engineering. A primary subject is the chemical engineering aspects of the electronics industry, an industry typically thought to be strictly an electrical engineer's playground. The book also delves into issues of manufacturing, operations performance, economics, and the dynamics of material movement, topics often considered the domain of industrial engineering and operations research. Hopefully, we have provided in this work a comprehensive treatment of both the technology and the factories of wafer fabrication. Novel features of these factories include long process flows and a dominance of processing over operational issues.

In recent decades, the way human beings interact with technology has been significantly transformed. In our daily life, ever fewer manually controlled devices are used, giving way to automatized houses, cars, and devices. A significant part of this technological revolution relies on signal detection and evaluation, placing detectors as core devices for further technological developments. This book introduces a versatile contribution to achieving light sensing: Organic Semiconductor Devices for Light Detection. The text is organized to guide the reader through the main concepts of light detection, followed by a introduction to the semiconducting properties of organic molecular solids. The sources of non-idealities in organic photodetectors are presented in chapter 5, and a new device concept, which aims to overcome some of the limitation discussed in the previous chapters, is demonstrated. Finally, an overview of the field is given with a selection of open points for future investigation.

This book presents the high-precision analysis of ground states and low-energy excitations in fractional quantum Hall states formed by Dirac electrons, which have attracted a great deal of attention. In particular the author focuses on the physics of fractional quantum Hall states in graphene on a hexagonal boron nitride substrate, which was recently implemented in experiments. The numerical approach employed in the book, which uses an exact numerical diagonalization of an effective model Hamiltonian on a Haldane's sphere based on pseudopotential representation of electron interaction, provides a better understanding of the recent experiments. The book reviews various aspects of quantum Hall effect: a brief history, recent experiments with graphene, and fundamental theories on integer and fractional Hall effects. It allows readers to quickly grasp the physics of quantum Hall states of Dirac fermions, and to catch up on latest research on the quantum Hall effect in graphene.

Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology provides a comprehensive overview of materials for application in thin film solar cells. It is the first book that compares experimental and computer-modeling methods, combining the state of the art in technology with the latest insights in device modeling. A wide range of experimental issues are explored, from materials and basic device physics of thin film solar cells to potential mass production facilities for solar panels. The modeling section presents an approach to integrated optical and electrical modeling of complete devices, including optical light trapping, and describes the physical materials parameters related to amorphous silicon that are crucial for successful modeling. The increasing importance of multijunction cells with different bandgap components for thin film silicon cells is reflected in a description of the latest breakthroughs acquired experimentally and by modeling. Concluding chapters describe what can be learned from combined modeling and device fabrication, indicating potential future methods of amorphous silicon solar cell optimization. This book will prove invaluable to researchers in the amorphous and microcrystalline silicon field and the physical and experimental approaches will be of interest to researchers investigating solar cells or other film devices for large area applications.

Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with external photodiodes. Continuous-mode and burst-mode receivers are compared. The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. In order to cover the topic comprehensively, detailed descriptions of receivers for optical data communication in general and, in particular, optical burst-mode receivers in deep-sub-um CMOS are presented. Numerous detailed and elaborate illustrations facilitate better understanding. "

The quantum Hall effects remains one of the most important subjects to have emerged in condensed matter physics over the past 20 years. The fractional quantum Hall effect, in particular, has opened up a new paradigm in the study of strongly correlated electrons, and it has been shown that new concepts, such as fractional statistics, anyon, chiral Luttinger liquid and composite particles, are realized in two-dimensional electron systems. This book explains the quantum Hall effects together with these new concepts starting from elementary quantum mechanics. Thus, graduate students can use this book to gain an overall understanding of these phenomena.

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction.