This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

Microcavities are semiconductor, metal, or dielectric structures providing optical confinement in one, two or three dimensions. At the end of the 20th century, microcavities have attracted attention due to the discovery of a strong exciton-light coupling regime allowing for the formation of superposition light-matter quasiparticles: exciton-polaritons. In the following century several remarkable effects have been discovered in microcavities, including the Bose-Einstein condensation of exciton-polaritons, polariton lasing, superfluidity, optical spin Hall and spin Meissner effects, amongst other discoveries. Currently, polariton devices exploiting the bosonic stimulation effects at room temperature are being developed by laboratories across the world. This book addresses the physics of microcavities: from classical to quantum optics, from a Boltzmann gas to a superfluid. It provides the theoretical background needed for understanding the complex phenomena in coupled light-matter systems, and it presents a broad overview of experimental progress in the physics of microcavities.

An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.

This book covers in a textbook-like fashion the basics or organic solar cells, addressing the limits of photovoltaic energy conversion and giving a well-illustrated introduction to molecular electronics with focus on the working principle and characterization of organic solar cells. Further chapters based on the author's dissertation focus on the electrical processes in organic solar cells by presenting a detailed drift-diffusion approach to describe exciton separation and charge-carrier transport and extraction. The results, although elaborated on small-molecule solar cells and with focus on the zinc phthalocyanine: C60 material system, are of general nature. They propose and demonstrate experimental approaches for getting a deeper understanding of the dominating processes in amorphous thin-film based solar cells in general. The main focus is on the interpretation of the current-voltage characteristics (J-V curve). This very standard measurement technique for a solar cell reflects the electrical processes in the device. Comparing experimental to simulation data, the author discusses the reasons for S-Shaped J-V curves, the role of charge carrier mobilities and energy barriers at interfaces, the dominating recombination mechanisms, the charge carrier generation profile, and other efficiency-limiting processes in organic solar cells. The book concludes with an illustrative guideline on how to identify reasons for changes in the J-V curve. This book is a suitable introduction for students in engineering, physics, material science, and chemistry starting in the field of organic or hybrid thin-film photovoltaics. It is just as valuable for professionals and experimentalists who analyze solar cell devices.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This book exhibits novel semiconductor black phosphorous (BP) materials that are developed beyond other 2D materials (graphene and TMDs). It accurately reviews their manufacture strategies, properties, characterization techniques and different utilizations of BP-based materials. It clarifies all perspectives alongside down to earth applications which present a future direction in the biomedical, photo, environmental, energy, and other related fields. Hence, the sections accentuate the basic fundamentals, synthesis, properties, applications, state-of-the-art studies about the BP-based materials through detailed reviews. This book is the result of commitments by numerous experts in the field from various backgrounds and expertise. It will appeal to researchers, scientists and in addition understudies from various teaches, for example, semiconductor innovation, energy and environmental science. The book content incorporates industrial applications and fills the gap between the exploration works in the lab and viable applications in related ventures.

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.

This book addresses the rapidly developing class of solar cell materials and designed to provide much needed information on the fundamental principles of these materials, together with how these are employed in photovoltaic applications. A special emphasize have been given for the space applications through study of radiation tolerant solar cells. This book present a comprehensive research outlining progress on the synthesis, fabrication and application of solar cells from fundamental to device technology and is helpful for graduate students, researchers, and technologists engaged in research and development of materials.

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

This book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ("become hot"), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

This thesis details the significant progress made in improving the performance of organic transistors and the network conductivity of carbon nanotubes. The first section investigates organic semiconductor nucleation and growth on the most common dielectric surface used to fabricate organic thin film transistors. The nucleation and growth of the semiconductor was determined to be a critical factor affecting the device performance. Excellent dielectric modification layers, which promote desirable semiconductor growth leading to high conductivity were identified, and a technologically relevant deposition technique was developed to fabricate high quality dielectric modification layers over large areas. This may represent an important step towards the realization of large area organic circuity. In the final section, lessons learned from studying organic semiconductor nucleation and growth were utilized to improve the conductivity of carbon nanotube networks. Selective nucleation of materials at the junctions between nanotubes in the network significantly decreased the network's sheet resistance. The resulting networks may be promising candidates for transparent electrodes with a variety of optoelectronic applications.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The books main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.

Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400 DegreesC), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.

This book provides a comprehensive overview of the recent development of flexible electronics. This is a fast evolving research field and tremendous progress has been made in the past decade. In this book, new material development and novel flexible device, circuit design, fabrication and characterizations will be introduced. Particularly, recent progress of nanomaterials, including carbon nanotubes, graphene, semiconductor nanowires, nanofibers, for flexible electronic applications, assembly of nanomaterials for large scale device and circuitry, flexible energy devices, such as solar cells and batteries, etc, will be introduced. And through reviewing these cutting edge research, the readers will be able to see the key advantages and challenges of flexible electronics both from material and device perspectives, as well as identify future directions of the field.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

The rapid growth of the use of optoelectronic technology in Information and Communications Technology (ICT) has seen a complementary increase in the performance of such technologies. As a result, optoelectronic technologies have replaced the technology of electronic interconnections. However, the control of manufacturing techniques for optoelectronic systems is more delicate than that of microelectronic technologies. This practical resource, divided into four chapters, examines several methods for determining the reliability of infrared LED devices. The primary interest of this book focuses on methods of extracting fundamental parameters from the electrical and optical characterization of specific zones in components. Failure mechanisms are identified based on measured performance before and after aging tests. Knowledge of failure mechanisms allows formulation of degradation laws, which in turn allow an accurate lifetime distribution for specific devices to be proposed.

This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program - but using a novelized form. The material is presented in a conversational format through a story that follows a fictional narrator as she grows from an intern to a manager in a (fictional) chip company. The story describes the technology development program from management, engineering and human perspectives, and exposes not only the management and technical issues but also the typical work-life balance challenges experienced by engineers working in the technology industry. Use of a series of realistic and representative vignettes, supported by a set of illustrative cartoon-ish panels, presents the serious management topics in a light and readable way.

Thin-Film Capacitors for Packaged Electronics deals with the capacitors of a wanted kind, still needed and capable of keeping pace with the demands posed by ever greater levels of integration. It spans a wide range of topics, from materials properties to limits of what's the best one can achieve in capacitor properties to process modeling to application examples. Some of the topics covered are the following:
-Novel insights into fundamental relationships between dielectric constant and the breakdown field of materials and related capacitance density and breakdown voltage of capacitor structures,
-Electrical characterization techniques for a wide range of frequencies (1 kHz to 20 GHz),
-Process modeling to determine stable operating points,
-Prevention of metal (Cu) diffusion into the dielectric,
-Measurements and modeling of the dielectric micro-roughness.

Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

This book presents a new system of solar cells. Colloidal nanocrystals possess many physical and chemical properties which can be manipulated by advanced control over structural features like the particle size. One application field is photovoltaics where colloidal semiconductor nanocrystals are explored as components of photo-active layers which can be produced from liquid media, often in combination with conductive polymers. The further development of this interdisciplinary field of research requires a deep understanding of the physics and chemistry of colloidal nanocrystals, conducting polymers and photovoltaic devices. This book aims at bridging gaps between the involved scientific disciplines and presents important fundamentals and the current state of research of relevant materials and different types of nanoparticle-based solar cells. The book will be of interest to researchers and PhD students. Moreover, it may also serve to accompany specialized lectures in related areas.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.