This volume contains the papers presented at the International Workshop on the Cur rent Problems in Condensed Matter: Theory and Experiment, held at Cocoyoc, More los, Mexico, during January 5-9, 1997. The participants had come from Argentina, Austria, Chile, England, France, Germany, Italy, Japan, Mexico, Switzerland, and the USA. The presentations at the Workshop provided state-of-art reviews of many of the most important problems, currently under study, in condensed matter. Equally important to all the participants in the workshop was the fact that we had come to honor a friend, Karl Heinz Bennemann, on his sixty-fifth birthday. This Festschrift is just a small measure of recognition of the intellectualleadership of Professor Bennemann in the field and equally important, as a sincere tribute to his qualities as an exceptional friend, college and mentor. Those who have had the privilege to work closely with Karl have been deeply touched by Karl's inquisitive scientific mind as well as by bis kindness and generosity."

This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors

"The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today

"Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors I know of no better text I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics

Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters."

The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic materials). Thus the book is also useful for experts working in physics, chemistry, and related engineering and industrial fields.

This book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. The 3rd edition has been thoroughly updated, with a new chapter on critical state model. The mechanism of irreversible properties is discussed in detail. The author provides calculations of pinning loss by the equation of motion of flux lines in the pinning potential and hysteresis loss. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. This book aims for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on "Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment" held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

This book offers an overview of power electronic applications in the study of power integrated circuit (IC) design, collecting novel research ideas and insights into fast transient response to prevent the output voltage from dropping significantly at the undershoot. It also discusses techniques and training to save energy and increase load efficiency, as well as fast transient response and high efficiency, which are the most important factors for consumer products that implement power IC. Lastly, the book focuses on power electronics for system loop analysis and optimal compensation design to help users and engineers implement their applications. The book is a valuable resource for university researchers, power IC R&D engineers, application engineers and graduate students in power electronics who wish to learn about the power IC design principles, methods, system behavior, and applications in consumer products.

High temperature superconductors (HTS) offer many advantages through their application in electrical systems, including high efficiency performance and high throughput with low-electrical losses. While cryogenic cooling and precision materials manufacture is required to achieve this goal, cost reductions without significant performance loss are being achieved through the advanced design and development of HTS wires, cables and magnets, along with improvements in manufacturing methods. This book explores the fundamental principles, design and development of HTS materials and their practical applications in energy systems.
Part one describes the fundamental science, engineering and development of particular HTS components such as wires and tapes, cables, coils and magnets and discusses the cryogenics and electromagnetic modelling of HTS systems and materials. Part two reviews the types of energy applications that HTS materials are used in, including fault current limiters, power cables and energy storage, as well as their application in rotating machinery for improved electrical efficiencies, and in fusion technologies and accelerator systems where HTS magnets are becoming essential enabling technologies.
With its distinguished editor and international team of expert contributors, High temperature superconductors (HTS) for energy applications is an invaluable reference tool for anyone involved or interested in HTS materials and their application in energy systems, including materials scientists and electrical engineers, energy consultants, HTS materials manufacturers and designers, and researchers and academics in this field.
Discusses fundamental issues and developments of particular HTS componentsComprehensively reviews the design and development of HTS materials and then applications in energy systemsReviews the use of HTS materials and cabling transmissions, fault alignment limiters, energy storage, generators and motors, fusion and accelerator

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.

This book provides an up-to-date introduction to the field of functional thin films and materials, encompassing newly developed technologies and fundamental new concepts. The focus is on the critical areas of novel thin films such as sol gel synthesis of membrane, ferroelectric thin films and devices, functional nanostructured thin films, micromechanical analysis of fiber-reinforced composites, and novel applications. An important aspect of the book lies in its wide coverage of practical applications. It introduces not only the cutting-edge technologies in modern industry, but also unique applications in many rapidly advancing fields. This book is written for a wide readership including university students and researchers from diverse backgrounds such as physics, materials science, engineering and chemistry. Both undergraduate and graduate students will find it a valuable reference book on key topics related to solid state and materials science.

This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.

The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.

Provides a comprehensive global picture of the semiconductor world

Each of the work's three sections presents a complete description of one aspect of the whole

Written and Edited by a truly international team of experts

The 2001 Dutch Sensor Conference held on 14 -15 May 2001, at the University of Twente in Enschede, The Netherlands, is the fourth in a series ofmeetings. The conference is initiated by the Dutch Technology Foundation (STW) in order to stimulate the industrial application ofsensor research. This MESA Monograph contains a collection oflatest research and development from all major Dutch centers ofsensor research and aspect ofsensor commercialization. Thus it provides an excellent overview ofthe state ofthe art ofDutch Sensor Technology in the new millennium. I should like to acknowledge the work ofthe program committee, the local organizing committee and, ofcourse, the contributors to this volume. All ofthem made the conference a success. Prof. Dr. Miko Elwenspoek Conference Chairman Program Committee: M. Elwenspoek (Chairman) (MESA+) A.van den Berg (MESA+) PJ. French (TV Delft) P.V. Lambeck (MESA+) H. Leeuwis (3T) J.c. Lotters (Bronkhorst) HAC. Tilmans (IMEC) Contents MEASUREMENT SYSTEM FOR BIOCHEMICAL ANALYSIS BASED 1 ON CAPILLARY ELECTROPHORESIS AND MICROSCALE CONDUCTIVITY DETECTION F. Laugere, A. Berthold, R.M Guijt, E. Baltussen, J. Bastemeijer, P.M Sarro, MJ. Vellekoop ELECTRO-OSMOTIC FLOW CONTROL IN MICROFLUIDICS 7 SYSTEMS R.E. Oosterbroek, MH. Goedbloed, A. Trautmann, N.J. van der Veen, S Schlautmann, 1.W Berenschot, A. van den Berg FLOW SENSING USING THE TEMPERATURE DISTRIBUTION 13 ALONG A HEATED MICROBEAM J.J. van Baar, RJ Wiegerink, GJM Krijnen, T.SJ. Lammerink, M.

GaAs on Si: Device Applications.- Substrate Considerations.- Majority-Carrier Devices.- Minority-Carrier Devices.- Conclusions.- Ion Beam Synthesis in Silicon.- The Ion Implantation Process.- Buried SiO2 Layers in Si.- Buried Monocrystalline CoSi2 Layers in Si.- Conclusions.- Ion Beam Processing of Chemical Vapor Deposited Silicon Layers.- Ion Beam Effects.- Epitaxy of Deposited Layers.- Polycrystal Formation.- Technology and Devices for Silicon Based Three-Dimensional Circuits.- 3D-Technology.- Device Characteristics.- Features of 3D-Circuits.- Demonstrators.- Conclusions.- Integrated Fabrication of Micromechanical Structures on Silicon.- Mechanical Properties of Silicon.- Thermal Properties.- Fabrication Techniques.- Etching.- Anisotropic Etching.- Boron Doped Etch Stop.- Electrochemical Etch Stop.- Embedded Layers.- Surface Microstructures.- Bonding of Layers.- Electrostatic Bonding.- Oxide Bonding.- Bonding to Metals.- Conclusion.- Micromachining of Silicon for Sensors.- Physical Properties of Silicon.- Transduction Techniques.- Fabrication Techniques.- Pressure Sensors.- Accelerometers.- Microresonator Sensors.- Optical Microresonator Sensors.- Conclusions.- Micromachining of Silicon for Sensors.- Hybrid or Monolithic Approach for optoelectronics: That is the question.- About the Hybrid Approach Material Competitors.- Silicon Based Technologies developed at LETI.- Planar and Channel waveguide Properties of IOS Technologies.- Field of Activities.- Integrated Optical Spectrum Analyser (IOSA).- Integrated Optical Sensors.- Optical Communication Applications.- Optical Memories.- Conclusion.- Principles and Implementation of Artificial Neural Networks.- Binary Networks.- Analog Networks.- Miscellaneous Networks.- Future VLSI Networks.- Conclusions.- List of Participants.

The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

This book presents experimental studies on emergent transport and magneto-optical properties in three-dimensional topological insulators with two-dimensional Dirac fermions on their surfaces. Designing magnetic heterostructures utilizing a cutting-edge growth technique (molecular beam epitaxy) stabilizes and manifests new quantization phenomena, as confirmed by low-temperature electrical transport and time-domain terahertz magneto-optical measurements. Starting with a review of the theoretical background and recent experimental advances in topological insulators in terms of a novel magneto-electric coupling, the author subsequently explores their magnetic quantum properties and reveals topological phase transitions between quantum anomalous Hall insulator and trivial insulator phases; a new topological phase (the axion insulator); and a half-integer quantum Hall state associated with the quantum parity anomaly. Furthermore, the author shows how these quantum phases can be significantly stabilized via magnetic modulation doping and proximity coupling with a normal ferromagnetic insulator. These findings provide a basis for future technologies such as ultra-low energy consumption electronic devices and fault-tolerant topological quantum computers.

This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author's team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.

The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

This book is a self-contained advanced textbook on the mathematical-physical aspects of quantum many-body systems, which begins with a pedagogical presentation of the necessary background information before moving on to subjects of active research, including topological phases of matter. The book explores in detail selected topics in quantum spin systems and lattice electron systems, namely, long-range order and spontaneous symmetry breaking in the antiferromagnetic Heisenberg model in two or higher dimensions (Part I), Haldane phenomena in antiferromagnetic quantum spin chains and related topics in topological phases of quantum matter (Part II), and the origin of magnetism in various versions of the Hubbard model (Part III). Each of these topics represents certain nontrivial phenomena or features that are invariably encountered in a variety of quantum many-body systems, including quantum field theory, condensed matter systems, cold atoms, and artificial quantum systems designed for future quantum computers. The book's main focus is on universal properties of quantum many-body systems. The book includes roughly 50 problems with detailed solutions. The reader only requires elementary linear algebra and calculus to comprehend the material and work through the problems. Given its scope and format, the book is suitable both for self-study and as a textbook for graduate or advanced undergraduate classes.

The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included.
Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology.
Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of "Microelectronics Journal" and has edited three previous Elsevier books.
Key Features:
- Contributors are world leaders in the field
- Brings together all the factors which are essential in self-organisation of quantum nanostructures
- Reviews the current status of research and development in self-organised nanostructured materials
- Provides a ready source of information on a wide range of topics
- Useful to any scientist who is involved in nanotechnology
- Excellent starting point for workers entering the field
- Serves as an excellent reference manual

This book describes the physical basis of microwave electronics and related topics, such as microwave vacuum and microwave semiconductor devices. It comprehensively discusses the main types of microwave vacuum and microwave semiconductor devices, their principles of action, theory, parameters and characteristics, as well as ways of increasing the frequency limit of various devices up to the terahertz frequency band. Further, it applies a unified approach to describe charged particle interaction within electromagnetic fields and the motion laws of charged particles in various media. The book is intended as a manual for researchers and engineers, as well as advanced undergraduate and graduate students.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. It includes properties, growth and applications. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago. With the advent of modern technologies and the successful growth of nitride substrates, these materials currently experience a second birth. Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. This area of research is fascinating for researchers and students in materials science, electrical engineering, chemistry, electronics, physics and biophysics. This book aims to be the ad-hoc instrument to this active field of research.