This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

This textbook is aimed at second-year graduate students in Physics, Electrical Engineer ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan tization and elementary excitations in solids, of the dielectric properties of semicon ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

This book focuses on recently developed crystal growth techniques to grow large and high quality superconducting single crystals. The techniques applied are traveling solvent floating zone (TSFZ) with infrared image furnace, Bridgeman, solution/flux and top seeded solution growth (TSSG) methods. The materials range from cuprates, cobaltates to pnictides including La2CuO4-based (LCO), YBa2Cu3O7-d (YBCO), Bi2Sr2Can 1CunO2n+4+ (n=1,2,3) (BSCCO) to NaxCoO2. The modified Bridgman "cold finger" method is devoted to the pnictide system with the best quality (transition width DTc~0.5 K) with highest Tc~38.5 K of Ba0.68K0.32Fe2A2. The book presents various iron-based superconductors with different structures, such as 1111, 122, 111, 11 and 42622,10-3-8. Detailed single crystal growth methods (fluxes, Bridgman, floating zone), the associated procedures and their impact to crystal size and quality are presented. The book also describes the influence of doping on the structure and the electric, magnetic, and superconducting properties of these compounds in a comparative study of different growth methods. It describes particularly under-, optimal and over-doped with oxygen cuprates (LCO, YBCO and BSCCO) and hole/electron/isovalently doped parent compounds AFe2As2 (A = Ba, Sr, Ca) (122), chalcogenides AxFe2-ySe2(A = K, Rb, Cs) (122), and Fe1-dTe1-xSex (11). A review of the current growth technologies and future growth efforts handling volatile and poisonous components are also presented.

This book explores the conversion for solar energy into renewable liquid fuels through electrochemical reactions. The first section of the book is devoted to the theoretical fundamentals of solar fuels production, focusing on the surface properties of semiconductor materials in contact with aqueous solutions and the reaction mechanisms. The second section describes a collection of current, relevant characterization techniques, which provide essential information of the band structure of the semiconductors and carrier dynamics at the interface semiconductor. The third, and last section comprises the most recent developments in materials and engineered structures to optimize the performance of solar-to-fuel conversion devices.

The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.

As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content: Low-dimensional semiconductor structures Magnetism in solids Diluted magnetic semiconductors Magnetic electrodes Spin injection Spin transistor Spin interference Spin Hall effect Quantum spin Hall effect Topological insulators Quantum computation with electron spins

This book summarizes the current knowledge of two-dimensional oxide materials. The fundamental properties of 2-D oxide systems are explored in terms of atomic structure, electronic behavior and surface chemistry. The concept of polarity in determining the stability of 2-D oxide layers is examined, charge transfer effects in ultrathin oxide films are reviewed as well as the role of defects in 2-D oxide films. The novel structure concepts that apply in oxide systems of low dimensionality are addressed, and a chapter giving an overview of state-of-the-art theoretical methods for electronic structure determination of nanostructured oxides is included. Special emphasis is given to a balanced view from the experimental and the theoretical side. Two-dimensional materials, and 2-D oxides in particular, have outstanding behavior due to dimensionality and proximity effects. Several chapters treat prototypical model systems as illustrative examples to discuss the peculiar physical and chemical properties of 2-D oxide systems. The chapters are written by renowned experts in the field.

This book reviews the current state-of-the art of single layer silicene up to thicker silicon nanosheets, and their structure, properties and potential applications. Silicene is a newly discovered material that is one atomic layer think. It is a two-dimensional (2D) nanomaterial that is classified as a nanosheet, which has large lateral dimensions up to micrometres, but thicknesses of only nanometres or less. Silicon nanosheets are currently a very 'hot' area of research. The unique properties and morphology of such materials make them ideal for a variety of applications, including electronic devices, batteries and sensors. 2D nanosheets of silicon can be considered as analogues of graphene. As silicon is already the major component of electronic devices, the significance of nanosheets composed of silicon is that they can be more easily integrated into existing electronic devices. Furthermore, if 2D nanostructured Si can be implemented into such devices, then their size could be reduced into the nano-regime, providing unique properties different from bulk Si that is currently employed. The book is written for researchers and graduate students.

This book provides a state-of-the art overview of a highly interesting emerging research field in solid state physics/nanomaterials science, topological structures in ferroic materials. Topological structures in ferroic materials have received strongly increasing attention in the last few years. Such structures include domain walls, skyrmions and vortices, which can form in ferroelectric, magnetic, ferroelastic or multiferroic materials. These topological structures can have completely different properties from the bulk material they form in. They also can be controlled by external fields (electrical, magnetic, strain) or currents, which makes them interesting from a fundamental research point of view as well as for potential novel nanomaterials applications. To provide a comprehensive overview, international leading researches in these fields contributed review-like chapters about their own work and the work of other researchers to provide a current view of this highly interesting topic.

This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators. The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk--boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe). In each case the discussion of simple toy models is followed by the formulation of the general arguments regarding topological insulators. The only prerequisite for the reader is a working knowledge in quantum mechanics, the relevant solid state physics background is provided as part of this self-contained text, which is complemented by end-of-chapter problems.

Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III-V semiconductor IC processing. The book's primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.

This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.

This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas and lattices of dielectric resonators is discussed.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry

This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal-semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.

This work describes theoretical and experimental advances towards the realization of a hybrid quantum processor in which the collective degrees of freedom of an ensemble of spins in a crystal are used as a multi-qubit register for superconducting qubits. A memory protocol made of write, read and reset operations is first presented, followed by the demonstration of building blocks of its implementation with NV center spins in diamond. Qubit states are written by resonant absorption of a microwave photon in the spin ensemble and read out of the memory on-demand by applying Hahn echo refocusing techniques to the spins. The reset step is implemented in between two successive write-read sequences using optical repumping of the spins.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.

This book deals with all aspects of plasmonics, basics, applications and advanced developments. Plasmonics is an emerging field of research dedicated to the resonant interaction of light with metals. The light/matter interaction is strongly enhanced at a nanometer scale which sparks a keen interest of a wide scientific community and offers promising applications in pharmacology, solar energy, nanocircuitry or also light sources. The major breakthroughs of this field of research originate from the recent advances in nanotechnology, imaging and numerical modelling. The book is divided into three main parts: extended surface plasmons polaritons propagating on metallic surfaces, surface plasmons localized on metallic particles, imaging and nanofabrication techniques. The reader will find in the book: Principles and recent advances of plasmonics, a complete description of the physics of surface plasmons, a historical survey with emphasize on the emblematic topic of Wood's anomaly, an overview of modern applications of molecular plasmonics and an extensive description of imaging and fabrications techniques.

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.

This thesis describes the construction of a rotatable spin-polarized electron source and its use in spin- and angle-resolved inverse photoemission to investigate the unoccupied electron states of Tl/Si(111)-(1x1) with special emphasis on their spin texture. Towards more efficient electronics - with the electron spin as information carrier: This motto is the motivation for numerous studies in solid state physics that deal with electron states whose spin degeneracy is lifted by spin-orbit interaction. This thesis addresses the spin-orbit-induced spin textures in momentum space in the surface electronic structure of a prototypical Rashba-type hybrid system: heavy metal thallium on semiconducting silicon. For Tl/Si(111)-(1x1), the thallium adlayer provides surface states with strong spin-orbit interaction and peculiar spin-orbit-induced spin textures: spin rotations and spin chirality in momentum space for unoccupied surface states with giant spin splittings. Almost completely out-of-plane spin-polarized valleys in the vicinity of the Fermi level are identified. As the valley polarization is oppositely oriented at specific points in momentum space, backscattering should be strongly suppressed in this system.

This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.