Silicon photonics uses chip-making techniques to fabricate photonic circuits. The emerging technology is coming to market at a time of momentous change. The need of the Internet content providers to keep scaling their data centers is becoming increasing challenging, the chip industry is facing a future without Moore's law, while telcos must contend with a looming capacity crunch due to continual traffic growth. Each of these developments is significant in its own right. Collectively, they require new thinking in the design of chips, optical components, and systems. Such change also signals new business opportunities and disruption. Notwithstanding challenges, silicon photonics' emergence is timely because it is the future of several industries. For the optical industry, the technology will allow designs to be tackled in new ways. For the chip industry, silicon photonics will become the way of scaling post-Moore's law. New system architectures enabled by silicon photonics will improve large-scale computing and optical communications. Silicon Photonics: Fueling the Next Information Revolution outlines the history and status of silicon photonics. The book discusses the trends driving the datacom and telecom industries, the main but not the only markets for silicon photonics. In particular, developments in optical transport and the data center are discussed as are the challenges. The book details the many roles silicon photonics will play, from wide area networks down to the chip level. Silicon photonics is set to change the optical components and chip industries; this book explains how.

The rapid growth of the use of optoelectronic technology in Information and Communications Technology (ICT) has seen a complementary increase in the performance of such technologies. As a result, optoelectronic technologies have replaced the technology of electronic interconnections. However, the control of manufacturing techniques for optoelectronic systems is more delicate than that of microelectronic technologies. This practical resource, divided into four chapters, examines several methods for determining the reliability of infrared LED devices. The primary interest of this book focuses on methods of extracting fundamental parameters from the electrical and optical characterization of specific zones in components. Failure mechanisms are identified based on measured performance before and after aging tests. Knowledge of failure mechanisms allows formulation of degradation laws, which in turn allow an accurate lifetime distribution for specific devices to be proposed.

Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

This book presents a new system of solar cells. Colloidal nanocrystals possess many physical and chemical properties which can be manipulated by advanced control over structural features like the particle size. One application field is photovoltaics where colloidal semiconductor nanocrystals are explored as components of photo-active layers which can be produced from liquid media, often in combination with conductive polymers. The further development of this interdisciplinary field of research requires a deep understanding of the physics and chemistry of colloidal nanocrystals, conducting polymers and photovoltaic devices. This book aims at bridging gaps between the involved scientific disciplines and presents important fundamentals and the current state of research of relevant materials and different types of nanoparticle-based solar cells. The book will be of interest to researchers and PhD students. Moreover, it may also serve to accompany specialized lectures in related areas.

This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program - but using a novelized form. The material is presented in a conversational format through a story that follows a fictional narrator as she grows from an intern to a manager in a (fictional) chip company. The story describes the technology development program from management, engineering and human perspectives, and exposes not only the management and technical issues but also the typical work-life balance challenges experienced by engineers working in the technology industry. Use of a series of realistic and representative vignettes, supported by a set of illustrative cartoon-ish panels, presents the serious management topics in a light and readable way.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book is a wide-ranging survey of the physics of out-of-equilibrium systems of correlated electrons, ranging from the theoretical, to the numerical, computational and experimental aspects. It starts from basic approaches to non-equilibrium physics, such as the mean-field approach, then proceeds to more advanced methods, such as dynamical mean-field theory and master equation approaches. Lastly, it offers a comprehensive overview of the latest advances in experimental investigations of complex quantum materials by means of ultrafast spectroscopy.

This book presents 50 selected peer-reviewed reports from the 2016 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2016 (Surabaya, Indonesia, 19-22 July, 2016). The Proceedings are devoted to processing techniques, physics, mechanics, and applications of advanced materials. As such, they examine a wide spectrum of nanostructures, ferroelectric crystals, materials and composites, as well as other promising materials with special properties. They present nanotechnology approaches, modern environmentally friendly piezoelectric and ferromagnetic techniques, and physical and mechanical studies of the structural and physical-mechanical properties of the materials discussed. Further, a broad range of original mathematical and numerical methods is applied to solve various technological, mechanical and physical problems, which are inte resting for applications. Great attention is devoted to novel devices with high accuracy, longevity and extended possibilities to work in wide temperature and pressure ranges, aggressive media, etc., which show improved characteristics, defined by the developed materials and composites, opening new possibilities to study different physico-mechanical processes and phenomena.

This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large "family". As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure's electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in the area of condensed matter physics and materials science.

This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current-reverse bias voltage curves of their 10 m devices at a temperature of 30K, as well as the dark current-temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 m growth. The resulting 13 m arrays are being considered by a number of ground-based astronomy research groups.

This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc. The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the "memory wall." The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification; hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named "Moguls" is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive to surface structure and morphology. This book serves as an introduction to RHEED for beginners and describes detailed experimental and theoretical treatments for experts, explaining how to analyze RHEED patterns. For beginners the principles of electron diffraction are explained and many examples of the interpretation of RHEED patterns are described. The second part of the book contains detailed descriptions of RHEED theory. The third part applies RHEED to the determination of surface structures, gives detailed descriptions of the effects of disorder, and critically reviews the mechanisms contributing to RHEED intensity oscillations. This unified and coherent account will appeal to both graduate students and researchers in the study of molecular beam epitaxial growth.

This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, GaP, ZnSe, and NaAlSi. The structural, optical, vibrational, and magnetic properties are discussed, in addition to transport and phase transformations.

The science and technology related to semiconductors have received significant attention for applications in various fields including microelectronics, nanophotonics, and biotechnologies. Understanding of semiconductors has advanced to such a level that we are now able to design novel system complexes before we go for the proof-of-principle experimental demonstration. This book explains the experimental setups for optical spectral analysis of semiconductors and describes the experimental methods and the basic quantum mechanical principles underlying the fast-developing nanotechnology for semiconductors. Further, it uses numerous case studies with detailed theoretical discussions and calculations to demonstrate the data analysis. Covering structures ranging from bulk to the nanoscale, it examines applications in the semiconductor industry and biomedicine. Starting from the most basic physics of geometric optics, wave optics, quantum mechanics, solid-state physics, it provides a self-contained resource on the subject for university undergraduates. The book can be further used as a toolbox for researching and developing semiconductor nanotechnology based on spectroscopy.

This thesis contains three breakthrough results in condensed matter physics. Firstly, broken reflection symmetry in the hidden-order phase of the heavy-fermion material URu2Si2 is observed for the first time. This represents a significant advance in the understanding of this enigmatic material which has long intrigued the condensed matter community due to its emergent long range order exhibited at low temperatures (the so-called "hidden order"). Secondly and thirdly, a novel collective mode (the chiral spin wave) and a novel composite particle (the chiral exciton) are discovered in the three dimensional topological insulator Bi2Se3. This opens up new avenues of possibility for the use of topological insulators in photonic, optoelectronic, and spintronic devices. These discoveries are facilitated by using low-temperature polarized Raman spectroscopy as a tool for identifying optically excited collective modes in strongly correlated electron systems and three-dimensional topological insulators.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Thermoelectric devices could play an important role in making efficient use of our energy resources but their efficiency would need to be increased for their wide scale application. There is a multidisciplinary search for materials with an enhanced thermoelectric responses for use in such devices. This volume covers the latest ideas and developments in this research field, covering topics ranging from the fabrication and characterization of new materials, particularly those with strong electron correlation, use of nanostructured, layered materials and composites, through to theoretical work to gain a deeper understanding of thermoelectric behavior. It should be a useful guide and stimulus to all working in this very topical field.

The authors illustrate the basic physics and materials science of conjugated polymers and their interfaces, particularly, but not exclusively, as they are applied to polymer-based light emitting diodes. The approach is to describe the basic physical and associated chemical principles that apply to these materials, which in many instances are different from those that apply to their inorganic counterparts. The main aim of the authors is to highlight specific issues and properties of polymer surfaces and interfaces that are relevant in the context of the emerging field of polymer-based electronics in general, and polymer-based light emitting diodes in particular. Both theoretical and experimental methods used in the study of these systems are discussed. This book will be of interest to graduate students and research workers in departments of physics, chemistry, electrical engineering and materials sciences studying polymer surfaces and interfaces and their application in polymer-based electronics.

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed.

Meeting the need for a reliable publication on the topic and reflecting recent breakthroughs in the field, this is a comprehensive overview of color quality of solid-state light sources (LED-OLED and laser) and conventional lamps, providing academic researchers with an in-depth review of the current state while supporting lighting professionals in understanding, evaluating and optimizing illumination in their daily work.

Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such quantum dots are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened.

This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world."

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.