This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

The book provides a technical account of the basic physics of nanostructures, which are the foundation of the hardware found in all manner of computers. It will be of interest to semiconductor physicists and electronic engineers and advanced research students. Crystalline nanostructures have special properties associated with electrons and lattice vibrations and their interaction. The result of spatial confinement of electrons is indicated in the nomenclature of nanostructures: quantum wells, quantum wires, quantum dots. Confinement also has a profound effect on lattice vibrations. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh's work in the late nineteenth century, but no such documentation exists for optical modes. It is only comparatively recently that any theory of the elastic properties of optical modes exists, and a comprehensive account is given in this book. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces the hybridization of longitudinally and transversely polarized modes, along with, in polar material, electromagnetic modes. Hybrid acoustic and optical modes are described, with an emphasis on polar-optical phonons and their interaction with electrons. Scattering rates in single heterostructures, quantum wells and quantum wires are described and the anharmonic interaction in quantum dots discussed. A description is given of the effects of dynamic screening of hybrid polar modes and the production of hot phonons.

Magnetostatic waves (MSWs) in magnetodielectric media are fundamental for the creation of various highly efficient devices for analog information processing in the microwave range. These devices include various filters, delay lines, phase shifters, frequency converters, nonreciprocal and nonlinear devices, and others. Magnetostatic Waves in Inhomogeneous Fields examines magnetostatic waves and their distribution in non-uniformly magnetized films and structures. The propagation of magnetostatic waves in magnetodielectric environments is accompanied by numerous and very diverse physical effects, sharply distinguishing them from ordinary electromagnetic waves in isotropic media. The authors address dispersion properties and noncollinearity of phase and group velocity vectors, as well as non-reciprocal propagation. Key Features Offers mathematical tools used in the calculation of properties of magnetostatic waves Includes a current literature review of magnetostatic waves and domain structures in garnet-ferrite films Considers the issue of converting magnetostatic waves into electromagnetic ones

The only one-stop reference to design, analysis, and manufacturing concepts for power devices utilizing HTS.

High temperature superconductors (HTS) have been used for building many devices for electric grids worldwide and for large ship propulsion motors for the U.S. Navy. And yet, there has been no single source discussing theory and design issues relating to power applications of HTS--until now. This book provides design and analysis for various devices and includes examples of devices built over the last decade.

Starting with a complete overview of HTS, the subsequent chapters are dedicated to specific devices: cooling and thermal insulation systems; rotating AC and DC machines; transformers; fault current limiters; power cables; and Maglev transport. As applicable, each chapter provides a history of the device, principles, configuration, design and design challenges, prototypes, and manufacturing issues, with each ending with a summary of the material covered. The design analysis and design examples provide critical insight for readers to successfully design their own devices. Original equipment manufacturer (OEM) designers, industry and utilities users, universities and defense services research groups, and senior/postgraduate engineering students and instructors will rely on this resource.

"HTS technology reduces electric losses and increases the efficiency of power equipment. This book by Swarn Kalsi, a leading expert on the HTS subject, provides a survey of the HTS technology and the design rules, performance analyses, and manufacturing concepts for power application-related devices. It compares conventional and HTS technology approaches for device design and provides significant examples of devices utilizing the HTS technology today. The book is useful for a broad spectrum of professionals worldwide: students, teaching staff, and OEM designers as well as users in industry and electric utilities."
--Professor Dr. Rolf Hellinger, Research and Technologies Corporate Technology, Siemens AG

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design
Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts.
Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields.
The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable process conditions and determining their impact on output parameters that measure quality. The authors introduce process modeling concepts, including several advanced process control topics such as run-by-run, supervisory control, and process and equipment diagnosis.
Critical coverage includes the following:
* Combines process control and semiconductor manufacturing
* Unique treatment of system and software technology and management of overall manufacturing systems
* Chapters include case studies, sample problems, and suggested exercises
* Instructor support includes electronic copies of the figures and an instructor's manual
Graduate-level students and industrial practitioners will benefit from the detailed exami?nation of how electronic materials and supplies are converted into finished integrated circuits and electronic products in a high-volume manufacturing environment.
An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
An Instructor Support FTP site is also available.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.
Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.
With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area.
Chapters review electron diffraction techniques, including the methodology for observations and measurementsDiscusses the principles and applications of photoemission techniquesExamines alternative in situ characterisation techniques

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A."

A detailed study of the science, engineering and applications of terahertz technology, based on room-temperature solid-state devices, which are seen as the key technology for wider applications in this frequency range. The relative merits of electronic and optical devices are discussed and new device principles identified. Issues of terahertz circuit design, implementation and measurement are complemented by chapters on current and future applications in communications, sensing and remote surveillance. Audience: The unique coverage of all aspects of terahertz technology will appeal to both new and established workers in the field, as well as providing a survey for the interested reader.

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.
The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.
* State-of-the-art information available for the first time as an all-in-source
* Extensive reference list making it an indispensable reference book
* Broad coverage from fundamental aspects up to industrial applications

A comprehensive and state-of-the-art resource for the design and fabrication of IGBT

Semiconductor devices, particularly the insulated gate bipolar transistor (IGBT), form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

• Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies
• Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT
• IGBT physics, device and circuit models
• IGBT unit cell design and latching suppression techniques
• IGBT fabrication steps and process design
• IGBT power modules

Unique in focusing on IGBT in its entirety, this book will be an invaluable resource for engineering students and professionals alike.

In this text, specialists in silicon-on-insulator technology from both East and West meet, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterization, device and circuit issues.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Theory of Superconductivity: From Weak to Strong Coupling leads the reader from basic principles through detailed derivations and a description of the many interesting phenomena in conventional and high-temperature superconductors. The book describes physical properties of novel superconductors, in particular, the normal state, superconducting critical temperatures and critical fields, isotope effects, normal and superconducting gaps, tunneling, angle-resolved photoemission, stripes, and symmetries. The book divides naturally into two parts. Part I introduces the phenomenology of superconductivity, the microscopic BCS theory, and its extension to the intermediate coupling regime. The first three chapters of this part cover generally accepted themes in the conventional theory of superconductivity and serve as a good introduction to the subject. Chapter 4 describes what happens to the conventional theory when the coupling between electrons becomes strong. Part II describes key physical properties of high-temperature superconductors and their theoretical interpretation. Alternative viewpoints are discussed, but the emphasis is placed on the bipolaron theory.

Organic Light Emitting Diodes: Principles, Characteristics, and Processes presents recent developments in organic electroluminescence and their application to light emitting diodes. In six chapters and complete with an extensive set of references, it describes and illustrates the physical principles of organic LEDs and their electrical and optical characteristics with a wide range of examples and practical studies. The author presents a unified approach to the description and functioning of organic LEDs, based on a comprehensive background of relevant physical processes and provides a clear foundation for the prediction and design of new improved electroluminescent devices.

More than 1,100 TEM images illustrate the science of ULSI

The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems.

The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts:

• Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation
• Part II focuses on key ULSI modules—ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization
• Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development
• Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics

This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with:

• More than 1,100 TEM images to illustrate the science of ULSI
• A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues
• Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 um and 1.55 um are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

"Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology" organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community."

In recent years, remarkable progress in the fabrication of novel mesoscopic devices has produced a revival of interest in quantum Hall physics. New types of measurements, more precise and efficient than ever, have made it possible to focus closely on the electronic properties of quantum Hall edge states. This is achieved by applying charge and heat currents at mesoscopic length scales, attaching metallic gates and Ohmic contacts, and splitting edge channels with the help of quantum point contacts. The experiments reveal fascinating new phenomena, such as the interference, statistics, and topological phase shifts of fractionally charged quasi-particles, strong interaction and correlation effects, and phase transitions induced by non-Gaussian fluctuations. The thesis discusses some puzzling results of these experiments and presents a coherent picture of mesoscopic effects in quantum Hall systems, which accounts for integer and fractional filling factors and ranges from microscopic theory to effective models, and covers both equilibrium and non-equilibrium phenomena.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch-De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree-Fock equations, and Landau's Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg-Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov's flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.