Effects of many-body interactions and superconducting correlations have become central questions in the quantum transport community. While most previous works investigating current fluctuations in nanodevices have been restricted to the stationary regime, Seoane's thesis extends these studies to the time domain. It provides relevant information about the time onset of electronic correlations mediated by interactions and superconductivity. This knowledge is essential for the development of fast electronic devices, as well as novel applications requiring fast manipulations, such as quantum information processing. In addition, the thesis establishes contact with issues of broad current interest such as non-equilibrium quantum phase transitions.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current-reverse bias voltage curves of their 10 m devices at a temperature of 30K, as well as the dark current-temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 m growth. The resulting 13 m arrays are being considered by a number of ground-based astronomy research groups.

This thesis introduces a systematic study on Second Generation (2G) High Temperature Superconductors (HTS), covering a novel design of an advanced medical imaging device using HTS, and an in-depth investigation on the losses of HTS. The text covers the design and simulation of a superconducting Lorentz Force Electrical Impedance Tomography. This is potentially a significant medical device that is more efficient and compact than an MRI, and is capable of detecting early cancer, as well as other pathologies such stroke and internal haemorrhages. It also presents the information regarding the fundamental physics of superconductivity, concentrating on the AC losses in superconducting coils and tapes. Overall, the thesis signifies an important contribution to the investigation of High Temperature Superconductors. This thesis will be beneficial to the development of advanced superconducting applications in healthcare as well as more broadly in electrical and energy systems.

This book is a very comprehensive textbook covering in great depth all the electricity and magnetism. The 2nd edition includes new and revised figures and exercises in many of the chapters, and the number of problems and exercises for the student is increased. In the 1st edition, emphasis much was made of superconductivity, and this methodology will be continued in the new edition by strengthening of the E-B analogy. Many of the new exercises and problems are associated with the E-B analogy, which enables those teaching from the book to select suitable teaching methods depending on the student's ability and courses taken, whether physics, astrophysics, or engineering. Changes in the chapters include a detailed discussion of the equivector-potential surface and its correspondence between electricity and magnetism. The shortcomings of using the magnetic scalar potential are also explained. The zero resistivity in a magnetic material showing perfect diamagnetism can be easily proved. This textbook is an ideal text for students, who are competent in calculus and are taking physics, astrophysics, or engineering at degree level. It is also useful as a reference book for the professional scientist.

This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

Rudolf P. Huebener presents the field of superconductivity research in a clear and compact way. He vividly describes how this area has developed in many directions since the discovery of superconductivity more than 100 years ago. This concerns materials, experiments on the physical principles, theoretical understanding and technical applications. Among other things, the essential deals with the Meissner-Ochsenfeld effect, magnetic flux quantization, the Josephson effect, the BCS theory and high-temperature superconductivity. This Springer essential is a translation of the original German 1st edition essentials, Geschichte und Theorie der Supraleiter by Rudolf P. Huebener, published by Springer Fachmedien Wiesbaden GmbH, part of Springer Nature in 2017. The translation was done with the help of artificial intelligence (machine translation by the service DeepL.com). A subsequent human revision was done primarily in terms of content, so that the book will read stylistically differently from a conventional translation. Springer Nature works continuously to further the development of tools for the production of books and on the related technologies to support the authors.

Gain complete understanding of electronic systems and their constituent parts. From the origins of the semiconductor industry right up until today, this book serves as a technical primer to semiconductor technology. Spanning design and manufacturing to the basic physics of electricity, it provides a comprehensive base of understanding from transistor to iPhone. Melding an accessible, conversational style with over 100 diagrams and illustrations, Understanding Semiconductors provides clear explanations of technical concepts going deep enough to fully explain key vernacular, mechanisms, and basic processes, without getting lost in the supporting theories or the theories that support the supporting theories. Concepts are tethered to the real world with crisp analysis of industry dynamics and future trends. As a break from the straight-ahead scientific concepts that keep the world of semiconductors spinning, Understanding Semiconductors is liberally sprinkled with apt analogies that elucidate difficult concepts. For example, when describing the relationship between voltage, current, power, and the flow of electricity through an electronic system, the book draws a parallel to a hot shower and the water utility system. Most of these are paired with clear visuals, giving you the best chance possible to absorb the concept at hand before moving on to the next topic. Whether you're narrowly technical or don't know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource. What You'll Learn: Charge, Electricity, and Basic Physics What are Semiconductors The Semiconductor Value Chain and Design Trade-Offs Transistors and Other Common Circuit Building Blocks Semiconductor Design from Concept to Tapeout Wafer Fabrication and Semiconductor Manufacturing Process Integrated Circuit (IC) Packaging and Signal & Power Integrity (SIPI) Common Circuits and System Components RF and Wireless Technologies System Architecture and Integration The Semiconductor Industry - Challenges, History, and Trends The Future of Semiconductors and Electronic Systems Who This Book Is For: People working directly in the semiconductor, electronics, and hardware technologies fields or in supporting industries, hobbyists and new electrical engineering enthusiasts with minimal technical experience or pre-existing qualifications, and curious individuals interested in learning more about a fascinating area of technology. Though designed for a non- or semi-technical reader, engineers focused in one particular domain can also use this book to broaden their understanding in areas that aren't directly related to their core area of expertise.

Surface photovoltage (SPV) techniques provide information about photoactive materials with respect to charge separation in space. This book aims to share experience in measuring and analyzing SPV signals and addresses researchers and developers interested in learning more about and in applying SPV methods. For this purpose, basics about processes in photoactive materials and principles of SPV measurements are combined with examples from research and development over the last two decades.SPV measurements with Kelvin probes, fixed capacitors, electron beams and photoelectrons are explained. Details are given for continuous, modulated and transient SPV spectroscopy. Simulation principles of SPV signals by random walks are introduced and applied for small systems. Application examples are selected for the characterization of silicon surfaces, gallium arsenide layers, electronic states in colloidal quantum dots, transport phenomena in metal oxides and local charge separation across photocatalytic active crystallites.

This book studies the fundamental aspects of many-body physics in quantum systems open to an external world. Recent remarkable developments in the observation and manipulation of quantum matter at the single-quantum level point to a new research area of open many-body systems, where interactions with an external observer and the environment play a major role. The first part of the book elucidates the influence of measurement backaction from an external observer, revealing new types of quantum critical phenomena and out-of-equilibrium dynamics beyond the conventional paradigm of closed systems. In turn, the second part develops a powerful theoretical approach to study the in- and out-of-equilibrium physics of an open quantum system strongly correlated with an external environment, where the entanglement between the system and the environment plays an essential role. The results obtained here offer essential theoretical results for understanding the many-body physics of quantum systems open to an external world, and can be applied to experimental systems in atomic, molecular and optical physics, quantum information science and condensed matter physics.

Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Quantum dots are nanometer-size semiconductor structures, and represent one of the most rapidly developing areas of current semiconductor research as increases in the speed and decreases in the size of semiconductor devices become more important. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. This important new reference book focuses on the key phenomena and principles. Chapter 1 provides a brief account of the history of quantum dots, whilst the second chapter surveys the various fabrication techniques used in the past two decades, and introduces the concept of self-organized growth. This topic is expanded in the following chapter, which presents a broad review of self-organization phenomena at surfaces of crystals. Experimental results on growth of quantum dot structures in many different systems and on their structural characterization are presented in Chapter 4. Basic properties of the dots relate to their geometric structure and chemical composition. Numerical modeling of the electronic and optical properties of real dots is presented in Chapter 5, together with general theoretical considerations on carrier capture, relaxation, recombination and properties of quantum dot lasers. Chapters 6 and 7 summarize experimental results on electronic, optical and electrical properties. The book concludes by disoussing highly topical results on quantum-dot-based photonic devices — mainly quantum dot lasers. Quantum Dot Heterostructures is written by some of the key researchers who have contributed significantly to the development of the field, and have pioneered both the theoretical understanding of quantum dot related phenomena and quantum dot lasers. It is of great interest to graduate and postgraduate students, and to researchers in semiconductor physics and technology and optoelectronics.

Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.SOI Circuit Design Concepts first introduces the student or practising engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches is also described.SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.

Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.

This book deals with mathematical modeling, namely, it describes the mathematical model of heat transfer in a silicon cathode of small (nano) dimensions with the possibility of partial melting taken into account. This mathematical model is based on the phase field system, i.e., on a contemporary generalization of Stefan-type free boundary problems. The approach used is not purely mathematical but is based on the understanding of the solution structure (construction and study of asymptotic solutions) and computer calculations. The book presents an algorithm for numerical solution of the equations of the mathematical model including its parallel implementation. The results of numerical simulation concludes the book. The book is intended for specialists in the field of heat transfer and field emission processes and can be useful for senior students and postgraduates.

The book is an introduction to the science and possible applications of Graphene, the first one-atom-thick crystalline form of matter. Discovered in 2004 by now Nobelists Geim and Novoselov, the single layer of graphite, a hexagonal network of carbon atoms, has astonishing electrical and mechanical properties. It supports the highest electrical current density of any material, far exceeding metals copper and silver. Its absolute minimum thickness, 0.34 nanometers, provides an inherent advantage in possible forms of digital electronics past the era of Moore's Law. The book describes the unusual physics of the material, that it offers linear rather than parabolic energy bands. The Dirac-like electron energy bands lead to high constant carrier speed, similar to light photons. The lattice symmetry further implies a two-component wave-function, which has a practical effect of cancelling direct backscattering of carriers. The resulting high carrier mobility allows observation of the Quantum Hall Effect at room temperature, unique to Graphene. The material is two-dimensional, but in sizes micrometers nearly to meters displays great tensile strength but vanishing resistance to bending. The book reviews theoretical predictions of excessive atomic vibrational motion, tied to the dimensionality. As explained, these predictions seem not of practical consequence, and such effects are unobservable in samples up to nearly one meter size. The disintegration temperature of this refractory material is estimated as 4900K, certainly higher than the measured sublimation temperature of graphite, 3900K. As explained, applications of Graphene come in classes that range from additives to composite materials to field effect transistor elements capable of extremely high frequency operation. The classes of applications correlate with differing methods of fabrication, from inexpensive chemical exfoliations of graphite, to chemical vapour deposition on catalytic substrates as Cu and Ni, at temperatures around 1300K. The book reviews potential applications within existing electronics, to include interconnect wires, flash-memory elements, and high frequency field effect transistors. The chance to supplant the dominant CMOS family of silicon logic devices is assessed.

This monograph presents an intuitive theory of trial wave functions for strongly interacting fermions in fractional quantum Hall states. The correlation functions for the proposed fermion interactions follow a novel algebraic approach that harnesses the classical theory of invariants and semi-invariants of binary forms. This approach can be viewed as a fitting and far-reaching generalization of Laughlin's approach to trial wave functions. Aesthetically viewed, it illustrates an attractive symbiosis between the theory of invariants and the theory of correlations. Early research into numerical diagonalization computations for small numbers of electrons shows strong agreement with the constructed trial wave functions.The monograph offers researchers and students of condensed matter physics an accessible discussion of this interesting area of research.

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration.

Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand.

This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as:

latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids - from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods- connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologiesthat address latchup for internal and external latchup on a local as well as global design level.

"Latchup" acts as a companion text to the author's series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

"Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory". - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

This thesis presents results crucial to the emerging field of indirect excitons. These specially designed quasiparticles give the unique opportunity to study fundamental properties of quantum degenerate Bose gases in semiconductors. Furthermore, indirect excitons allow for the creation of novel optoelectronic devices where excitons are used in place of electrons. Excitonic devices are explored for the development of advanced signal processing seamlessly coupled with optical communication. The thesis presents and describes the author's imaging experiments that led to the discovery of spin transport of excitons. The many firsts presented herein include the first studies of an excitonic conveyer, leading to the discovery of the dynamical localization-delocalization transition for excitons, and the first excitonic ramp and excitonic diode with no energy-dissipating voltage gradient.

This book offers a compact tutorial on basic concepts and tools in quantum many-body physics, and focuses on the correlation effects produced by mutual interactions. The content is divided into three parts, the first of which introduces readers to perturbation theory. It begins with the simplest examples-hydrogen and oxygen molecules-based on their effective Hamiltonians, and looks into basic properties of electrons in solids from the perspective of localized and itinerant limits. Readers will also learn about basic theoretical methods such as the linear response theory and Green functions. The second part focuses on mean-field theory for itinerant electrons, e.g. the Fermi liquid theory and superconductivity. Coulomb repulsion among electrons is addressed in the context of high-Tc superconductivity in cuprates and iron pnictides. A recent discovery concerning hydride superconductors is also briefly reviewed. In turn, the third part highlights quantum fluctuation effects beyond the mean-field picture. Discussing the dramatic renormalization effect in the Kondo physics, it provides a clear understanding of nonperturbative interaction effects. Further it introduces readers to fractionally charged quasi-particles in one and two dimensions. The last chapter addresses the dynamical mean field theory (DMFT). The book is based on the author's long years of experience as a lecturer and researcher. It also includes reviews of recent focus topics in condensed matter physics, enabling readers to not only grasp conventional condensed matter theories but also to catch up on the latest developments in the field.

This book starts with background concerning three-dimensional integration - including their low energy consumption and high speed image processing - and then proceeds to how to construct them and which materials to use in particular situations. The book covers numerous applications, including next generation smart phones, driving assistance systems, capsule endoscopes, homing missiles, and many others. The book concludes with recent progress and developments in three dimensional packaging, as well as future prospects.