This book presents the current level of understanding of the structural, electronic and optical properties of amorphous semiconductors. As amorphous materials depart significantly from the crystalline counterparts, some of the basic problems associated with the validity of the effective mass approximation, whether K is a good quantum number, and concepts of phonons and excitons will be addressed in detail. A significant part of the book is devoted to present recent progress made in the understanding of light-induced degradations in amorphous semiconductors, which is regarded as the most limiting problem in device applications. The monograph presents a comprehensive review of both experimental and theoretical studies on amorphous semiconductors.

What are the relations between the shape of a system of cities and that of fish school? Which events should happen in a cell in order that it participates to one of the finger of our hands? How to interpret the shape of a sand dune? This collective book written for the non-specialist addresses these questions and more generally, the fundamental issue of the emergence of forms and patterns in physical and living systems. It is a single book gathering the different aspects of morphogenesis and approaches developed in different disciplines on shape and pattern formation. Relying on the seminal works of D'Arcy Thompson, Alan Turing and Rene Thom, it confronts major examples like plant growth and shape, intra-cellular organization, evolution of living forms or motifs generated by crystals. A book essential to understand universal principles at work in the shapes and patterns surrounding us but also to avoid spurious analogies.

The research of unitary concepts in solid state and molecular chemistry is of current interest for both chemist and physicist communities. It is clear that due to their relative simplicity, low dimensional materials have attracted most of the attention. Thus, many non-trivial problems were solved in chain systems, giving some insight into the behavior of real systems which would otherwise be untractable. The NATO Advanced Research Workshop on "Organic and Inorganic Low-Dimensional Crystalline Materials" was organized to review the most striking electronic properties exhibited by organic and inorganic sytems whose space dimensionality ranges from zero (Od) to one (1d), and to discuss related scientific and technological potentials. The initial objectives of this Workshop were, respectively: i) To research unitary concepts in solid state physics, in particular for one dimensional compounds, ii) To reinforce, through a close coupling between theory and experiment, the interplay between organic and inorganic chemistry, on the one hand, and solid state physics on the other, iii) To get a salient understanding of new low-dimensional materials showing "exotic" physical properties, in conjunction with structural features.

This book focuses on the study of synthesized ZnO powder using Zn(CH3COO)2 2H2O precursor, methanol (as solvent), and sodium hydroxide (NaOH) to vary the pH. The successfully synthesized ZnO powder from the sol-gel centrifugation and sol-gel storage methods were characterized and investigated by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Fourier-transform infrared spectroscopy, UV visible spectroscopy, and photoluminescence test to compare the properties of the nanoparticles. The best characteristic of the ZnO powder from both methods was observed when the powders were coated on an ITO glass to fabricate a PEC. The current density voltage performances of both PECs were investigated under luminescent and dark conditions.
"

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

At extremely low temperatures, clouds of bosonic atoms form what is known as a Bose-Einstein condensate. Recently, it has become clear that many different types of condensates -- so called fragmented condensates -- exist. In order to tell whether fragmentation occurs or not, it is necessary to solve the full many-body Schrodinger equation, a task that remained elusive for experimentally relevant conditions for many years. In this thesis the first numerically exact solutions of the time-dependent many-body Schrodinger equation for a bosonic Josephson junction are provided and compared to the approximate Gross-Pitaevskii and Bose-Hubbard theories. It is thereby shown that the dynamics of Bose-Einstein condensates is far more intricate than one would anticipate based on these approximations. A special conceptual innovation in this thesis are optimal lattice models. It is shown how all quantum lattice models of condensed matter physics that are based on Wannier functions, e.g. the Bose/Fermi Hubbard model, can be optimized variationally. This leads to exciting new physics."

The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrodinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented."

The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components."

A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding modern electronic devices and also be prepared for future developments and advancements in this far-reaching area of science and technology.

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions.

Phase separation has become a fascinating subject in the discussion of cuprate superconductors. All these materials have layered structures containing CU02 planes as the most important building blocks. They are coupled only weakly so that the electronic properties show a nearly two-dimensional behaviour. Due to correlations the undoped compounds are insulators of the Mott Hubbard type exhibiting long-range antiferromagnetic order. Upon doping a rich scenario of physical phenomena appears: Even at low hole concentra tions the antiferromagnetic ordering temperature is reduced drastically and spin-glass behaviour as well as a hopping type conductivity can be observed. Further doping leads to metallic-like conductivity and below Tc to super conductivity. In this doping regime antiferromagnetic fluctuations are still observed. At very high charge carrier densities superconductivity is lost and the systems show pure metallic conduction without ,magnetic correlations. One of the most interesting phenomena in high-T c research is the interplay between magnetism and conductivity or superconductivity. Especially the behaviour of charge carriers in the antiferromagnetic background raises a number of open questions. Two scenarios become possible: the carriers tend to delocalize over the whole crystal forming a homogeneous state with band-like structure or they separate into hole-rich (conducting, superconducting) and hole-poor (insulating, antiferromagnetic) phases leading to an inhomogeneous structure.

This book contains rewiev articles presenting the current status of high-temperature superconductivity research. The articles cover synthesis issues, materials properties and most fundamental theoretical problems. Applications of high- temperature superconductors are also reflected in several contributions.
The book addresses researchers working in fundamental research in solid-state physics as well as engineers developing new materials for industrial applications.

This Volume 44 of Advances in Solid State Physics contains the written versions of most of the invited lectures of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 8 to 12, 2004 in Regensburg, Germany. Many of the topical talks given at the numerous and very lively symposia are also included. They have covered extremely interesting and timely subjects. Thus the book truly reflects the status of the field of solid state physics in 2004, and indicates its importance, not only in Germany but also internationally.

Starting from the early experiments, this detailed presentation, containing more than 500 references, provides a comprehensive review on current-induced nonequilibrium phenomena in quasi-one-dimensional superconductors, leading the reader from the fundamentals to the most recent research results. Experiments on monocrystalline filaments (whiskers) - including those obtained by the author - are compared with results on long thin film microbridges and related species and interpreted within the theoretical framework. Instructions on experimental techniques are given and yet unresolved problems are discussed. The book is well suited as an introduction for the novice and as a handbook for the active researcher.

Common methods of local magnetic imaging display either a high spatial resolution and relatively poor field sensitivity (MFM, Lorentz microscopy), or a relatively high field sensitivity but limited spatial resolution (scanning SQUID microscopy). Since the magnetic field of a nanoparticle or nanostructure decays rapidly with distance from the structure, the achievable spatial resolution is ultimately limited by the probe-sample separation. This thesis presents a novel method for fabricating the smallest superconducting quantum interference device (SQUID) that resides on the apex of a very sharp tip. The nanoSQUID-on-tip displays a characteristic size down to 100 nm and a field sensitivity of 10^-3 Gauss/Hz^(1/2). A scanning SQUID microsope was constructed by gluing the nanoSQUID-on-tip to a quartz tuning-fork. This enabled the nanoSQUID to be scanned within nanometers of the sample surface, providing simultaneous images of sample topography and the magnetic field distribution. This microscope represents a significant improvement over the existing scanning SQUID techniques and is expected to be able to image the spin of a single electron.

In the past decade, there has been a burst of new and fascinating physics associated to the unique properties of two-dimensional exciton polaritons, their recent demonstration of condensation under non-equilibrium conditions and all the related quantum phenomena, which have stimulated extensive research work. This monograph summarizes the current state of the art of research on exciton polaritons in microcavities: their interactions, fast dynamics, spin-dependent phenomena, temporal and spatial coherence, condensation under non-equilibrium conditions, related collective quantum phenomena and most advanced applications. The monograph is written by the most active authors who have strongly contributed to the advances in this area. It is of great interests to both physicists approaching this subject for the first time, as well as a wide audience of experts in other disciplines who want to be updated on this fast moving field.

In the past two years conferences on superconductivity have been characterized by the attendance of hundreds of scientists. Consequently, the organizers were forced to schedule numerous parallel sessions and poster presentations with an almost unsurveyable amount of information. It was, therefore, felt that a more informal get-together, providing ample time for a thourough discussion of some topics of current interest in high-temperature superconductivity, was timely and benefitial for leading scientists as well as for newcomers in the field. The present volume contains the majority of papers presented at the International Discussion Meeting on High-Tc Superconductors held at the Mauterndorf Castle in the Austrian Alps from February 7 to 11, 1988. Each subject was introduced in review form by a few invited speakers and then discussed together with the contributed poster presentations. These discussion sessions chaired by selected scientists turned out to be the highlights of the meeting, not only because all the participants truly appreciated the possibility of an information exchange, but mainly because of the magnificent job done by the discussion chairmen, John A. Mydosh (Leiden), Martin Peter (Geneva) and Ken E. Gray (Argonne). First results on the just discovered Bi-superconductors and the clarification of electron resonance experiments on (123)-compounds should be mentioned in particular. The relaxed atomosphere favoring free discussions was certainly promoted by the surroundings offered in the Mauterndorf Castle, which dates back to 1253. Poster presentations and a conference banquet in historic knight's halls are certainly not found everyday in conference routines.

Because the new high-temperature superconductors cannot be grown as large single crystals, interfaces and junctions play an important role in their properties. The chapters in this book, each by leading researchers in the field, examine the state of our understanding of such interfaces.
Chapters cover such topics as studies of YCBO films by transmission-electron, scanning-tunneling, and atomic-force microscopy; microstructure, interfacial interactions, and twin boundary structures in YCBO films; grain-boundary Josephson junctions; and overlayer formation.

Femtosecond laser micromachining of transparent material is a powerful and versatile technology. In fact, it can be applied to several materials. It is a maskless technology that allows rapid device prototyping, has intrinsic three-dimensional capabilities and can produce both photonic and microfluidic devices. For these reasons it is ideally suited for the fabrication of complex microsystems with unprecedented functionalities. The book is mainly focused on micromachining of transparent materials which, due to the nonlinear absorption mechanism of ultrashort pulses, allows unique three-dimensional capabilities and can be exploited for the fabrication of complex microsystems with unprecedented functionalities.This book presents an overview of the state of the art of this rapidly emerging topic with contributions from leading experts in the field, ranging from principles of nonlinear material modification to fabrication techniques and applications to photonics and optofluidics.

This is the final volume of Heisenberg's Collected Works. It contains his papers on a (nonlinear) unified theory of elementary particles, as well as his contribution to superconductivity and multiparticle production. Especially interesting is the first group of papers, which is split intotwo sections dealing with, firstly, the formulation of the famous nonlinear spinor equation and, secondly, its applications. Among others the reader willfind a thorough discussion of Heisenberg's collaboration with W. Pauli on these matters. Illuminating annotations to the various sections in this volume have been provided by H. Koppe, R. Hagedorn and the editors.

stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Regular Nanofabrics in Emerging Technologies gives a deep insight into both fabrication and design aspects of emerging semiconductor technologies, that represent potential candidates for the post-CMOS era. Its approach is unique, across different fields, and it offers a synergetic view for a public of different communities ranging from technologists, to circuit designers, and computer scientists. The book presents two technologies as potential candidates for future semiconductor devices and systems and it shows how fabrication issues can be addressed at the design level and vice versa. The reader either for academic or research purposes will find novel material that is explained carefully for both experts and non-initiated readers. Regular Nanofabrics in Emerging Technologies is a survey of post-CMOS technologies. It explains processing, circuit and system level design for people with various backgrounds.

Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga0.69In0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.