"Integrated 60GHz RF Beamforming in CMOS "describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters with other key building blocks such as low noise amplifiers and power amplifiers are described in detail. Finally, this book describes the integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package.

This book contains rewiev articles presenting the current status of high-temperature superconductivity research. The articles cover synthesis issues, materials properties and most fundamental theoretical problems. Applications of high- temperature superconductors are also reflected in several contributions.
The book addresses researchers working in fundamental research in solid-state physics as well as engineers developing new materials for industrial applications.

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary blocks" are Cooper pair and fluxon (vortex). This book presents new ways how to modify superconductivity and vortex matter through nanostructuring and the use of nanoscale magnetic templates. The basic nano-effects, vortex and vortex-antivortex patterns, vortex dynamics, Josephson phenomena, critical currents, and interplay between superconductivity and ferromagnetism at the nanoscale are discussed. Potential applications of nanostructured superconductors are also presented in the book.

The International Winter School on Electronic Properties of Conjugated Polymers held March 14-21,1987, in Kirchberg (Austria) was a sequel to a meeting held in Kirchberg two years before on a similar subject. The 1987 winter school was organized in cooperation with the "Bundesministerium fiir Wissenschaft und Forschung" in Austria and the "Bundesministerium fiir Forschung und Technologie" in the Federal Republic of Germany. The basic idea of the meeting was to provide an opportunity for experienced scientists from universities and industry to discuss their most recent re- sults and for students and young scientists to inform themselves about the present state of the research in this field. As in 1985, the scientific interest was concentrated on the electronic structure of various conjugated polymers and related compounds. The focus of interest in the field now appears to have broadened and cov- ers not only conductivity and relaxation phenomena of polyacetylene but also nonlinear optical properties, highly oriented and single-crystal poly- mers, and electrochemical and opto-electrochemical properties of special materials such as polypyrrole and polyaniline. Exciting results on conduc- tivity - the mass specific conductivity (i.e., the conductivity divided by the density) of polyacetylene is more than twice that of copper (!) - and a detailed interpretation of the meaning of conjugation length are reported.

Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also for graduate and postgraduate students and all those who would like to get acquaintained with this vivid area of the materials science.

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers.

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope."

Ferromagnetism of metallic systems, especially those including transition metals, has been a controversial subject of modern science for a long time. This controversy sterns from the apparent dual character of the d-electrons responsible for magnetism in transition metals, i.e., they are itinerant elec trons described by band theory in their ground state, while at finite tem peratures they show various properties that have long been attributed to a system consisting of local magnetic moments. The most familiar example of these properties is the Curie-Weiss law of magnetic susceptibility obeyed by almost all ferromagnets above their Curie temperatures. At first the problem seemed to be centered around whether the d-elec trons themselves are localized or itinerant. This question was settled in the 1950s and early 1960s by various experimental investigations, in particular by observations of d-electron Fermi surfaces in ferromagnetic transition metals. These observations are generally consistent with the results of band calculations. Theoretical investigations since then have concentrated on explaining this dual character of d-electron systems, taking account of the effects of electron-electron correlations in the itinerant electron model. The problem in physical terms is to study the spin density fluctuati.ons, which are ne glected in the mean-field or one-electron theory, and their influence on the physical properties."

The fourth edition of "Solid Surfaces, Interfaces and Thin Films" has been used meanwhile as a standard textbook around the world at many universities and research institutions. Even though surface and interface physics have become a mature science branch, their theoretical concepts and experimental techniques are of higher importance than ever before because of their impact on nanostructure physics. Surface and interface physics form the basis for modern nanoscience, be it in quantum electronics, in catalysis, in corrosion, or in lubrication research. This explains the ever-growing demand for education in these elds. It was therefore time to carefully revise the book and bring it up to latest dev- opments both in fundamental research and in application. Concerning new ma- rial aspects topics about group III nitride surfaces and high k-oxide/semiconductor heterostructures have been included. Recent developments in these material classes are of essential importance for high-speed/high-power electronics and advanced - based CMOS technology on the nanometer scale. The novel eld of spin electronics or spintronics having been initiated by the detection of the giant magnetoresistance (GMR) by Peter Grunberg and Albert Fert (Nobel Prize 2007) required a more extensive consideration of anisotropy effects in thin magnetic lms. For the devel- ment of purely electrical spin switching devices based on spin effects rather than on semiconductor space charge layers, a prerequisite for high-speed, low-power sp- tronics, the spin-transfer torque mechanism shows some promise. Correspondingly this topic is discussed in direct connection with the GMR in this new edition.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

Quasicrystals are a new form of the solid state which differ from the other two known forms, crystalline and amorphous, by possesing a new type of long-range translational order, called quasiperiodicty, and a noncrystallographic orientational order. This book provides an up-to-date description of the unusual physical properties of these new materials. Emphasis is placed on the experimental results, which are compared with those of the corresponding crystalline and amorphous systems and discussed in terms of modern theoretical models. Written by leading authorities in the field, the book will be of great use both to experienced workers in the field and to uninitiated graduate students.

Japanese semiconductor firms are well known for obtaining dynamics in a short period of time and achieving even global leadership. A significant portion of their success are attributable to cooperative interfirm relations and the development of intermediate organizational structure based on long-term relationship between firms. The purpose of this book is to explain how interfirm relations contributed to their dynamics during the golden age of the semiconductor industry. Meanwhile this book clarifies the real source of dynamics in interfirm relations and how the firms have interacted. The author concludes that the competitive-cum-cooperative (CCC) interfirm interaction are observed. Quantitative and qualitative findings show that firms enjoy not only flexible cooperation based synergy effects, but also dynamics market-like effects by creating competition among partners through CCC interaction.

This is the first volume of a comprehensive two-volume treatise on superconductivity that represents the first such publication since the earlier work by R. Parks. It systematically reviews the basic physics and recent advances in the field. Leading researchers describe the state of the art in conventional phonon-induced superconductivity, high-Tc superconductivity, and novel superconductivity. After an introduction and historical overview, the leaders in the special fields of research give a comprehensive survey of the basics and the state of the art in chapters covering the entire field of superconductivity, including conventional and unconventional superconductors. Important new results are reported in a manner intended to stimulate further research. Numerous illustrations, diagrams and tables make this book especially useful as a reference work for students, teachers, and researchers. The second volume treats novel superconductors.

This book is intended to provide a clear and unified introduction to the physics of matter at low temperatures, and to do so at a level accessible to researchers new to the field and to graduate and senior undergraduate students. Rapid scientific progress made over the last seven years in a number of specific areas-for example, high-Tc superconductivity and the quantum Hall effect-has inevitably rendered our earlier Matter at Low Temperatures somewhat out of date. We have therefore taken the opportunity to revise and amend the text in its entirety and, at the same time, to furnish it with what we believe to be a more apt title, emphasizing that it is with the physics of low temperatures that we are particularly concerned. Like its predecessor, Low-Temperature Physics is devoted to the fascinating and diverse phenomena that occur under conditions of extreme cold, many of which have no analogue at all in the everyday world at room temperature.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.

Thermoelectric devices could play an important role in making efficient use of our energy resources but their efficiency would need to be increased for their wide scale application. There is a multidisciplinary search for materials with an enhanced thermoelectric responses for use in such devices. This volume covers the latest ideas and developments in this research field, covering topics ranging from the fabrication and characterization of new materials, particularly those with strong electron correlation, use of nanostructured, layered materials and composites, through to theoretical work to gain a deeper understanding of thermoelectric behavior. It should be a useful guide and stimulus to all working in this very topical field.

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield."

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials' age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range of semiconductor properties or of a continually increasing number of the semiconductor device applications. Rather, the main purpose of this book is to provide an introductory perspective on the basic principles of semiconductor materials and their applications that are described in a relatively concise format in a single volume. Thus, this book should especially be suitable as an introductory text for a single course on semiconductor materials that may be taken by both undergraduate and graduate engineering students. This book should also be useful, as a concise reference on semiconductor materials, for researchers working in a wide variety of fields in physical and engineering sciences.

The book is based on the lectures given at the CIME school "Quantum many body systems" held in the summer of 2010. It provides a tutorial introduction to recent advances in the mathematics of interacting systems, written by four leading experts in the field: V. Rivasseau illustrates the applications of constructive Quantum Field Theory to 2D interacting electrons and their relation to quantum gravity; R. Seiringer describes a proof of Bose-Einstein condensation in the Gross-Pitaevski limit and explains the effects of rotating traps and the emergence of lattices of quantized vortices; J.-P. Solovej gives an introduction to the theory of quantum Coulomb systems and to the functional analytic methods used to prove their thermodynamic stability; finally, T. Spencer explains the supersymmetric approach to Anderson localization and its relation to the theory of random matrices. All the lectures are characterized by their mathematical rigor combined with physical insights.

Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented."

Stochastic Energetics by now commonly designates the emerging field that bridges the gap between stochastic dynamical processes and thermodynamics. Triggered by the vast improvements in spatio-temporal resolution in nanotechnology, stochastic energetics develops a framework for quantifying individual realizations of a stochastic process on the mesoscopic scale of thermal fluctuations. This is needed to answer such novel questions as: Can one cool a drop of water by agitating an immersed nano-particle? How does heat flow if a Brownian particle pulls a polymer chain? Can one measure the free-energy of a system through a single realization of the associated stochastic process? This book will take the reader gradually from the basics to the applications: Part I provides the necessary background from stochastic dynamics (Langevin, master equation), Part II introduces how stochastic energetics describes such basic notions as heat and work on the mesoscopic scale, Part III details several applications, such as control and detection processes, as well as free-energy transducers. It aims in particular at researchers and graduate students working in the fields of nanoscience and technology.