This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetime white LEDs are under development with the potential to replace incandescent bulbs in many situations.

WIDE BANDGAP SEMICONDUCTORS provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical explanations of key processes such as laser diodes, LEDs and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques, and more...

The volume also explores the potential use of these semiconductors in HDTV, power conditioning devices, and high power microwave applications. The contributors are all experts in the fields of growth, processing, and characterization of these semiconductors, including II-VI compounds, processing techniques for SiC, GaN and diamond, and materials analysis of all wide gap semiconductors.

Key Features:

- Explains the development and advantages of broadgap semiconductors, showing their increasing power and their increasingly broader use in commercial and military products

- Features step-by-step explanations of key processes in the fabrication of the semiconductors, including chemistry, testing, design, and more

- Explores the need for advanced electronics capable of operation at 6000C and how silicon-on-insulator technology will meet this need

- Provides an understanding of semiconductor chemistry, thermodynamics and etching, along with technical explanations of common devices, descriptions of processing equipment and techniques, impurity testing, implantation damage, and more

This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.

This book presents a novel approach to the teaching of dynamic aspects of the operation of semiconductor and opto-electronic devices. Such dynamic aspects often determine the steady state conditions. Also, the dynamical operation of such devices is of increasing importance as modern methods of communicating data and information require electronic devices that switch electrical or optical signals at ever faster rates. The author discusses the rates at which electrons and holes can reach equilibrium, the rates at which transistors and diodes can switch, and the rates at which electrons and holes can interact with photons, and with protons. He also applies the rate equations in a unified way to models of light-emitting diodes, injection lasers and photodiodes. Finally, the author discusses more-advanced topics on the photon statistics of injection lasers, mode-locking and the application of rate equations and Maxwell's equations to opto-electronic devices.

The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

Provides information on all chemical, physical and material aspects of this class of cuprates, and covers their applications. This work provides data on the chemistry, solid-state chemistry, handling and safety requirements of thallium.

Gain complete understanding of electronic systems and their constituent parts. From the origins of the semiconductor industry right up until today, this book serves as a technical primer to semiconductor technology. Spanning design and manufacturing to the basic physics of electricity, it provides a comprehensive base of understanding from transistor to iPhone. Melding an accessible, conversational style with over 100 diagrams and illustrations, Understanding Semiconductors provides clear explanations of technical concepts going deep enough to fully explain key vernacular, mechanisms, and basic processes, without getting lost in the supporting theories or the theories that support the supporting theories. Concepts are tethered to the real world with crisp analysis of industry dynamics and future trends. As a break from the straight-ahead scientific concepts that keep the world of semiconductors spinning, Understanding Semiconductors is liberally sprinkled with apt analogies that elucidate difficult concepts. For example, when describing the relationship between voltage, current, power, and the flow of electricity through an electronic system, the book draws a parallel to a hot shower and the water utility system. Most of these are paired with clear visuals, giving you the best chance possible to absorb the concept at hand before moving on to the next topic. Whether you're narrowly technical or don't know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource. What You'll Learn: Charge, Electricity, and Basic Physics What are Semiconductors The Semiconductor Value Chain and Design Trade-Offs Transistors and Other Common Circuit Building Blocks Semiconductor Design from Concept to Tapeout Wafer Fabrication and Semiconductor Manufacturing Process Integrated Circuit (IC) Packaging and Signal & Power Integrity (SIPI) Common Circuits and System Components RF and Wireless Technologies System Architecture and Integration The Semiconductor Industry - Challenges, History, and Trends The Future of Semiconductors and Electronic Systems Who This Book Is For: People working directly in the semiconductor, electronics, and hardware technologies fields or in supporting industries, hobbyists and new electrical engineering enthusiasts with minimal technical experience or pre-existing qualifications, and curious individuals interested in learning more about a fascinating area of technology. Though designed for a non- or semi-technical reader, engineers focused in one particular domain can also use this book to broaden their understanding in areas that aren't directly related to their core area of expertise.

This book presents a novel approach to the teaching of dynamic aspects of the operation of semiconductor and opto-electronic devices. Such dynamic aspects often determine the steady state conditions. Also, the dynamical operation of such devices is of increasing importance as modern methods of communicating data and information require electronic devices that switch electrical or optical signals at ever faster rates. The author discusses the rates at which electrons and holes can reach equilibrium, the rates at which transistors and diodes can switch, and the rates at which electrons and holes can interact with photons, and with protons. He also applies the rate equations in a unified way to models of light-emitting diodes, injection lasers and photodiodes. Finally, the author discusses more-advanced topics on the photon statistics of injection lasers, mode-locking and the application of rate equations and Maxwell's equations to opto-electronic devices.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
Key Features
* Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
* The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
* The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
* Provides the most complete review of device degradation mechanisms as well as drain engineering methods
* Contains the most extensive reference list on the subject

Power Electronic Semiconductor Switches is the successor to Professor Ramshaw's widely-used Power Electronics. The text has been completely re-written and expanded to focus on semiconductor switches, and to take into account advances in the field since the publication of Power Electronics and changes in electrical and electronic engineering syllabuses.

After a foreword by Klaus von Klitzing, the first chapters of this book discuss the prehistory and the theoretical basis as well as the implications of the discovery of the Quantum Hall effect on superconductivity, superfluidity, and metrology, including experimentation. The second half of this volume is concerned with the theory of and experiments on the many body problem posed by fractional effect. Specific unsolved problems are mentioned throughout the book and a summary is made in the final chapter. The quantum Hall effect was discovered on about the hundredth anniversary of Hall's original work, and the finding was announced in 1980 by von Klitzing, Dorda and Pepper. Klaus von KIitzing was awarded the 1985 Nobel prize in physics for this discovery.

The primary thrust of very large scale integration (VLS ) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS ) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS .

The CMOS Cookbook contains all you need to know to understand and successfully use CMOS (Complementary Metal-Oxide Semiconductor) integrated circuits. Written in a "cookbook" format that requires little math, this practical, user-oriented book covers all the basics for working with digital logic and many of its end appilations.
Whether you're a newcomver to logic and electronics or a senior design engineer, you'll find CMOS Cookbook and its examples helpful as a self-learning guide, a reference handbook, a project-idea book, or a text for teaching others digital logic at the high school through university levels.
In the pages of this revised edition, you'll discover:
*What CMOS is, who makes it, and how the basic transistors, inverters, and logic and transmission gates work
*CMOS usage rules, power-suppy examples, and information on breadboards, state testing, tools, and interfacing
*Discussions of the latest CMOS devices and sub-families, including the 74C, 74HC, and 74HCT series that streamline TTL and CMOS interfacing
*An in-depth look at multivibrators - including astable, monostable, and bistable - and linear techniques
*Clocked-logic designs and the extensive applications of JK and D-type flip-flops
*A helpful appendix featuring a TTL-to-CMOS conversion chart

The Winter School held in Les Houches on March 12-21, 1985 was devoted to Semiconductor Heterojunctions and Superlattices, a topic which is recognized as being now one of the most interesting and active fields in semiconductor physics. In fact, following the pioneering work of Esaki and Tsu in 1970, the study of these two-dimensional semiconductor heterostructures has developed rapidly, both from the point of view of basic physics and of applications. For instance, modulation-doped heterojunctions are nowadays currently used to investigate the quantum Hall effect and to make very fast transistors. This book contains the lectures presented at this Winter School, showing in particular that many aspects of semiconductor heterojunctions and super lattices were treated, extending from the fabrication of these two-dimensional systems to their basic properties and applications in micro-and opto-electron ics. Among the subjects which were covered, one can quote as examples: molecular beam epitaxy and metallorganic chemical vapor deposition of semi conductor compounds; band structure of superlattices; properties of elec trons in heterojunctions, including the fractional quantum Hall effect; opti cal properties of two-dimensional heterostructures; quantum well lasers; and two-dimensional electron gas field effect transistors. It is clear that two-dimensional semiconductor systems are raising a great deal of interest in many industrial and university laboratories. From the number of applications which were received and from the reactions of the participants, it can certainly be asserted that this School corresponded to a need and came at the right time."

The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption. 2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.

Explores theoretical and experimental studies of the properties of one-dimensional photonic crystals. The authors also consider the possibilities of controlling the characteristics of microwave photonic crystals with the help of electric and magnetic fields and provide examples of new fields of application of microwave photonic crystals. They review measurements of the parameters of layered structures containing nanometer-sized semiconductor and metal layers and explore microwave-compatible loads. Written for specialists and scientists working in the fields of radiophysics, microwave solid-state electronics, and microwave photonics. Key selling features: Presents studies of theoretical and experimental properties of one-dimensional photonic crystals Analyzes microwave photonic crystals based on flat transmission lines. Explores the use of electric and magnetic fields to control crystal characteristics. Reviews applications of photonic crystals in semiconductors. Examines one-dimensional microwave photonic crystals based on rectangular wave guides.

This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: * practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; * detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; * systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; * coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students. Dr. Peter W. Epperlein is Technology Consultant with his own semiconductor technology consulting business Pwe-PhotonicsElectronics-IssueResolution in the UK. He looks back at a thirty years career in cutting edge photonics and electronics industries with focus on emerging technologies, both in global and start-up companies, including IBM, Hewlett-Packard, Agilent Technologies, Philips/NXP, Essient Photonics and IBM/JDSU Laser Enterprise. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) degrees in physics, magna cum laude, from the University of Stuttgart, Germany. Dr. Epperlein is an internationally recognized expert in compound semiconductor and diode laser technologies. He has accomplished R&D in many device areas such as semiconductor lasers, LEDs, optical modulators, quantum well devices, resonant tunneling devices, FETs, and superconducting tunnel junctions and integrated circuits. His pioneering work on sophisticated diagnostic research has led to many world s first reports and has been adopted by other researchers in academia and industry. He authored more than seventy peer-reviewed journal papers, published more than ten invention disclosures in the IBM Technical Disclosure Bulletin, has served as reviewer of numerous proposals for publication in technical journals, and has won five IBM Research Division Awards. His key achievements include the design and fabrication of high-power, highly reliable, single mode diode lasers. Book Reviews Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Prof. em. Dr. Heinz Jackel, High Speed Electronics and Photonics, Swiss Federal Institute of Technology ETH Zurich, Switzerland The book Semiconductor Laser Engineering, Reliability and Diagnostics by Dr. P.W. Epperlein is a landmark in the recent literature on semiconductor lasers because it fills a longstanding gap between many excellent books on laser theory and the complex and challenging endeavor to fabricate these devices reproducibly and reliably in an industrial, real world environment. Having worked myself in the early research and development of high power semiconductor lasers, I appreciate the competent, complete and skillful presentation of these three highly interrelated topics, where small effects have dramatic consequences on the success of a final product, on the ultimate performance and on the stringent reliability requirements, which are the name of the game. As the title suggests the author addresses three tightly interwoven and critical topics of state-of-the-art power laser research. The three parts are: device and mode stability engineering (chapter 1, 2), reliability mechanisms and reliability assessment strategies (chapter 3, 4, 5, 6) and finally material and device diagnostics (chapter 7, 8, 9) all treated with a strong focus on the implementation. This emphasis on the complex practical aspects for a large-scale power laser fabrication is a true highlight of the book. The subtle interplay between laser design, reliability strategies, advanced failure analysis and characterization techniques are elaborated in a very rigorous and scientific way using a very clear and easy to read representation of the complex interrelation of the three major topics. I will abstain from trying to provide a complete account of all the topics but mainly concentrate on the numerous highlights. The first part 1 Laser Engineering is divided in two chapters on basic electronic-optical, structural, material and resonator laser engineering on the one side, and on single mode control and stability at very high, still reliable power-levels with the trade-off between mirror damage, single mode stability on the other side. To round up the picture less well-known concepts and the state-of-the-art of large-area lasers, which can be forced into single-mode operation, are reviewed carefully. The subtle and complex interplay, which is challenging to optimize for a design for reliability and low stress as a major boundary condition is crucial for the design. The section gives a rather complete and well-referenced account of all relevant aspects, relations and trade-offs for understanding the rest of the book. The completeness of the presentation on power laser diode design based on basic physical and plausible arguments is mainly based on analytic mathematical relations as well as experiments providing a new and well-balanced addition for the power diode laser literature in particular. Modern 2D self-consistent electro-optical laser modeling including carrier hole burning and thermal effects this is important because the weak optical guiding and gain-discrimination depend critically on rather small quantities and effects, which are difficult to optimize experimentally is used in the book for simulation results, but is not treated separately. The novel and really original, gap-filling bulk of the book is elaborated by the author in a very clear way in the following four chapters in the part 2 Laser Reliability on laser degradation physics and mirror design and passivation at high power, followed then by two very application oriented chapters on reliability design engineering and practical reliability strategies and implementation procedures. This original combination of integral design and reliability aspects which are mostly neglected in standard literature is certainly a major plus of this book. I liked this second section as a whole, because it provides excellent insights in degradation physics on a high level and combines it in an interesting and skillful way with the less glamorous (unfortunately) but highly relevant reliability science and testing strategies, which is particularly important for devices operating at extreme optical stresses with challenging lifetime requirements in a real word environment. Finally, the last part 3 Laser Diagnostics comprising three chapters, is devoted mainly to advanced experimental diagnostics techniques for material integrity, mechanical stress, deep level defects, various dynamic laser degradation effects, surface- and interface quality, and most importantly heating and disordering of mirrors and mirror coatings. The topics of characterization techniques comprising micro-Raman- and micro-thermoreflectance-probing, 2K photoluminescence spectroscopy, micro-electroluminescence and photoluminescence scanning, and deep-level-transient spectroscopy have been pioneered by the author for the specific applications over many years guaranteeing many competent and well represented insights. These techniques are brilliantly discussed and the information distributed in many articles by the author has been successfully unified in a book form. In my personal judgment and liking, I consider the parts 2 and 3 on reliability and diagnostics as the most valuable and true novel contribution of the book, which in combination with the extremely well-covered laser design of part 1 clearly fill the gap in the current diode laser literature, which in this detail has certainly been neglected in the past. In summary, I can highly recommend this excellent, well-organized and clearly written book to readers who are already familiar with basic diode laser theory and who are active in the academic and industrial fabrication and characterization of semiconductor lasers. Due to its completeness, it also serves as an excellent reference of the current state-of-the-art in reliability engineering and device and material diagnostics. Needless to mention that the quality of the book, its representations and methodical structure meet the highest expectation and are certainly a tribute from the long and broad experience of the author in academic laser science and the industrial commercialization of high power diode lasers. In my opinion, this book was a pleasure to read and due to its quality and relevance deserves a large audience in the power diode laser community! Prof. em. Dr. Heinz Jackel, High Speed Electronics and Photonics, Swiss Federal Institute of Technology ETH Zurich, Switzerland June 16, 2013 ========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Dr. Chung-en Zah, Research Director, Semiconductor Technologies Research, S&T Division, Corning Incorporate, Corning NY, USA This book covers for the first time the three closely interrelated key laser areas of engineering (design), reliability and diagnostics in one book, written by the well-known practitioner in cutting-edge optoelectronics industries, Dr. Peter W. Epperlein. The book closes the gap in the current book literature and is thus a unique and excellent example of how to merge design, reliability and diagnostics aspects in a very professional, profound and complete manner. All physical and technological principles, concepts and practical aspects required for developing and fabricating highly-reliable high-power single-mode laser products are precisely specified and skilfully formulated along with all the necessary equations, figures, tables and worked-out examples making it easy to follow through the nine chapters. Hence, this unique book is a milestone in the diode laser literature and is an excellent reference book not only for diode laser researchers and engineers, but also diode laser users. The engineering part starts with a very informative and clear, well-presented account of all necessary basic diode laser types, principles, parameters and characteristics for an easy and quick understanding of laser functionality within the context of the book. Along with an elaborate and broad discussion of relevant laser material systems, applications, typical output powers, power-limiting factors and reliability tradeoffs, basic fabrication and packaging technologies, this excellent introductory section is well suited to become quickly and easily familiar with practical aspects and issues of diode laser technologies. Of special importance and high usefulness is the first analytic and quantitative discussion in a book on issues of coupling laser power into optical single mode fibers. The second section discusses in a well-balanced, competent and skilful way waveguide topics such as basic high-power design approaches, transverse vertical and lateral waveguide concepts, stability of the fundamental transverse lateral mode and fundamental mode waveguide optimization techniques by considering detrimental effects such as heating, carrier injection, spatial hole burning, lateral current spreading and gain profile variations. Less well-known approaches to force large-area lasers into a single mode operation are well-identified and carefully discussed in depth and breadth. All these topics are elaborated in a very complete, rigorous and scientific way and are clearly articulated and easy to read. In particular, the book works out the complex interaction between the many different effects to optimize high-power single-mode performance at ultimate reliability and thus is of great benefit to every researcher and engineer engaged in this diode laser field. Another novelty and highlight is, for the first time ever in book form, a comprehensive yet concise discussion of diode laser reliability related issues. These are elaborated in four distinct chapters comprising laser degradation physics and modes, optical strength enhancement approaches including mirror passivation/coating and non-absorbing mirror technologies, followed by two highly relevant product-oriented chapters on reliability design engineering concepts and techniques and an elaborate reliability test plan for laser chip and module product qualification. This original and novel approach to link laser design to reliability aspects and requirements provides both, most useful insight into degradation processes such as catastrophic optical mirror damage on a microscopic scale, and a wide selection of effective remedial actions. These accounts, which are of highest significance for lasers operating at the optical stress limit due to extremely high output power densities and most demanding lifetime requirements are very professionally prepared and discussed in an interesting, coherent and skilful manner. The diagnostics part, consisting of three very elaborate chapters, is most unique and novel with respect to other diode laser books. It discusses for the first time ever on a very high level and in a competent way studies on material integrity, impurity trapping effects, mirror and cavity temperatures, surface- and interface quality, mirror facet disorder effects, mechanical stress and facet coating instability, and diverse laser temperature effects, dynamic laser degradation effects and mirror temperature maps. Of highest significance to design, performance and reliability are the various correlations established between laser device and material parameters. The most different and sophisticated experiments, carried out by the author at micrometer spatial resolutions and at temperatures as low as 2K, provide highly valuable insights into laser and material quality parameters, and reveal for the first time the origins of high power limitations on an atomic scale due to local heating effects and deep level defects. It is of great benefit, that the experimental techniques such as Raman spectroscopy, various luminescence techniques, thermoreflectance and deep-level transient spectroscopy, pioneered by the author for the specific experiments on lasers, are discussed with great expertise in depth and breadth, and the numerous paper articles published by the author are now represented in this book. The book has an elaborate table of contents and index, which are very useful, over 200 illustrative figures and tables, and extensive lists of references to all technical topics at the end of each of the nine chapters, which make it easy to follow from cover to cover or by jumping in at random areas of special interest. Moreover, experimental and theoretical concepts are always illustrated by practical examples and data. I can highly recommend this extremely relevant, well-structured and well-formulated book to all practising researchers in industrial and academic diode laser R&D environments and to post-graduate engineering students interested in the actual problems of designing, manufacturing, testing, characterising and qualifying diode lasers. Due to its completeness and novel approach to combine design, reliability and diagnostics in the same book, it can serve as an ideal reference book as well, and it deserves to be welcomed wordwide by the addressed audience. Dr. Chung-en Zah, Research Director, Semiconductor Technologies Research, S&T Division, Corning Incorporate, Corning NY, USA =========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Cordinatore Prof. Lorenzo Pavesi, UNIVERSITA DEGLI STUDI DI TRENTO, Dipartimento di Fisica / Laboratorio di Nanoscienze This book represents a well thought description of three fundamental aspects of laser technology: the functioning principles, the reliability and the diagnostics. From this point of view, and, as far as I know, this is a unique example of a book where all these aspects are merged together resulting in a well-balanced presentation. This helps the reader to move with ease between different concepts since they are presented in a coherent manner and with the same terminology, symbols and definitions. The book reads well. Despite the subtitle indicates that it is a practical approach, the book is also correct from a formal point of view and presents the necessary equations and derivations to understand both the physical mechanisms and the practicalities via a set of useful formulas. In addition, there is the more important aspect of many real-life examples of how a laser is actually manufactured and which the relevant parameters that determine its behaviour are. It impresses the amounts of information that are given in the book: this would be more typical of a thick handbook on semiconductor laser than of an agile book. Dr. Epperlein was able to identify the most important concepts and to present them in a clear though concise way. I am teaching a course on Optoelectronics and I'm going to advise students to refer to this book, because it has all the necessary concepts and derivations for a systematic understanding of semiconductor lasers with many worked-out examples, which will help the student to grasp the actual problems of designing, manufacturing, testing and using semiconductor lasers. All the various concepts are joined to very useful figures, which, if provided to instructors as files, can be a useful add-on for the use of the book as text for teaching. Concepts are always detailed with numbers to give a feeling of their practical use. In conclusion, I do find the book suitable for my teaching duties and will refer it to my students. Prof. Dr. Lorenzo Pavesi, Head of the Department of Physics, Head of the Nanoscience Laboratory, University of Trento, Italy 31 May 2013 =========================================== Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices . By Peter W. Epperlein Robert W. Herrick, Ph.D., Senior Component Reliability Engineer, Intel Corp., Santa Clara, California, USA Dr. Epperlein has done the semiconductor laser community a great service, by releasing the most complete book on the market on the practical issues of how to make reliable semiconductor lasers. While dozens of books have been written over the past couple of decades on semiconductor laser design, only a handful have been written on semiconductor laser reliability. Prior to the release of this book, perhaps 40% of the material could be obtained elsewhere by combining five books: one on laser design, one on laser reliability, one on reliability calculations, and a couple of laser review books. Another 40% could be pieced together by collecting 50 -100 papers on the subjects of laser design, laser fabrication, characterization, and reliability. The remaining 20% have not previously been covered in any comprehensive way. Only the introductory material in the first half of the first chapter has good coverage elsewhere. The large majority of the knowledge in this book is generally held as trade secret by those with the expertise in the field, and most of those in the know are not free to discuss. The author was fortunate enough to work for the first half of his career in the IBM research labs, with access to unparalleled resources, and the ability to publish his work without trade secret restrictions. The results are still at the cutting edge of our understanding of semiconductor laser reliability today, and go well beyond the empirical black box approach many use of try everything, and see what works. The author did a fine job of pulling together material from many disparate fields. Dr. Epperlein has particular expertise in high power single mode semiconductor lasers, and those working on those type of lasers will be especially interested in this book, as there has never been a book published on the fabrication and qualification of such lasers before. But those in almost any field of semiconductor lasers will learn items of interest about device design, fabrication, reliability, and characterization. Unlike most other books, which intend to convey the scientific findings or past work of the author, this one is written more as a how to manual, which should make it more accessible and useful to development engineers and researchers in the field. It also has over 200 figures, which make it easier to follow. As with many books of this type, it is not necessary to read it from cover-to-cover; it is best skimmed, with deep diving into any areas of special interest to the reader. The book is remarkable also for how comprehensive it is even experts will discover something new and useful. Dr. Epperlein s book is an essential read for anyone looking to develop semiconductor lasers for anything other than pure research use, and I give it my highest recommendation. Robert W. Herrick, Ph.D., Senior Component Reliability Engineer, Intel Corp., Santa Clara, California, USA

Polymers for Light-Emitting Devices and Displays provides an in-depth overview of fabrication methods and unique properties of polymeric semiconductors, and their potential applications for LEDs including organic electronics, displays, and optoelectronics. Some of the chapter subjects include: - The newest polymeric materials and processes beyond the classical structure of PLED - Conjugated polymers and their application in the light-emitting diodes (OLEDs & PLEDs) as optoelectronic devices. - The novel work carried out on electrospun nanofibers used for LEDs. - The roles of diversified architectures, layers, components, and their structural modifications in determining efficiencies and parameters of PLEDs as high-performance devices. - Polymer liquid crystal devices (PLCs), their synthesis, and applications in various liquid crystal devices (LCs) and displays. - Reviews the state-of-art of materials and technologies to manufacture hybrid white light-emitting diodes based on inorganic light sources and organic wavelength converters.

Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.