* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 um and 1.55 um are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

"Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology" organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community."

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities." These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.

The problem of instabilities is addressed in this volume, the third of this book series.

Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

The symposium "UV, Blue and Green Light Emission from
Semiconductor Materials" was part of the European Materials
Research Society (E-MRS) Spring Meeting in Strasbourg, 4-7 June,
1996 and it was arranged to bring together specialists in growth,
characterization and device fabrication of materials suitable for
visible and UV optoelectronic applications. Although the main
emphasis was on the development of semiconductor diode lasers,
work was also presented on the progress of frequently doubling
techniques which have an immediate application in commercial
systems. The proceedings are divided into Part I and Part II
reflecting the two streams of research based on II-VI
semiconductors on the one hand and III-V GaN based semiconductors
on the other hand. Although these two areas are competing
vigorously for the realization of practical blue laser diodes,
there are many common problems, particularly with doping and also
the need for suitable substrates for the growth of lattice
matched structures.

The invited talks were presented by
speakers from Japan, the USA and Europe with representation from
both University and Industrial research groups. In particular,
leaders in the development of blue lasers SONY (II-VI devices)
and Nichia (GaN devices) provided important device papers
alongside the excellent contributions on a wide range of topics
covering epitaxial growth, optical structural and electrical
measurements as well as problems of compensation of dopants and
laser lifetimes.

The symposium "Nonlinear Optical and
Optoelectronics Organic Materials" dealt with the development of
organic molecules and polymers as potential replacements for
existing materials in electronic, optoelectronics and nonlinear
optical devices.

Polymer electronics is the science behind many important new developments in technology, such as the flexible electronic display (e-ink) and many new developments in transistor technology. Solar cells, light-emitting diodes, and transistors are all areas where plastic electronics is likely to, or is already having, a serious impact on our daily lives. With polymer transistors and light-emitting diodes now being commercialised, there is a clear need for a pedagogic text that discusses the subject in a clear and concise fashion suitable for senior undergraduate and graduate students. The content builds on what has been learnt in an elementary (core) course in solid state physics and electronic behaviour, but care has been taken to ensure that important aspects such as the synthesis of these polymers are not overlooked. The chemistry is treated in a manner appropriate to students of physics. Polymer Electronics presents a thorough discussion of the physics and chemistry behind this new and important area of science, appealing to all physical scientists with an interest in the field.

Die Grundlagen der Mikroelektronik werden kompakt und in leicht verstandlicher Form vorgestellt. Der Leser erfahrt, wie integrierte Schaltkreise hergestellt werden, wie sie funktionieren und welche Bauelemente sich realisieren lassen."

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Since the first light-emitting diode (LED) was invented by Holonyak and Bevacqua in 1962, LEDs have made remarkable progress in the past few decades with the rapid development of epitaxy growth, chip design and manufacture, packaging structure, processes, and packaging materials. LEDs have superior characteristics such as high efficiency, small size, long life, low power consumption, and high reliability. The market for white LED is growing rapidly in various applications. It has been widely accepted that white LEDs will be the fourth illumination source to substitute the incandescent, fluorescent, and high-pressure sodium lamps. With the development of LED chip and packaging technologies, the efficiency of high power white LED will broaden the application markets of LEDs while changing the lighting concepts of our lives. In LED Packaging for Lighting Applications, Professors Liu and Luo cover the full spectrum of design, manufacturing, and testing. Many concepts are proposed for the first time, and readers will benefit from the concurrent engineering and co-design approaches to advanced engineering design of LED products. * One of the only books to cover LEDs from package design to manufacturing to testing * Focuses on the design of LED packaging and its applications such as road lights * Includes design methods and experiences necessary for LED engineers, especially optical and thermal design * Introduces novel LED packaging structures and manufacturing processes, such as ASLP * Covers reliability considerations, the most challenging problem for the LED industry * Provides measurement and testing standards, which are critical for LED development, for both LED and LED fixtures * Codes and demonstrations available from the book s Companion Website This book is ideal for practicing engineers working in design or packaging at LED companies and graduate students preparing for work in industry. This book also provides a helpful introduction for advanced undergraduates, graduates, researchers, lighting designers, and product managers interested in the fundamentals of LED design and production. Color version of selected figures can be found at www.wiley.com/go/liu/led

Fur zahlreiche neue Anwendungen vor allem in der Kommunikationstechnik sind die III-V-Verbindungshalbleiter die technologische Basis. Entsprechend wertvoll wird das Wissen uber die Herstellungstechniken von Bauelementen fur integrierte Mikrowellenschaltungen, denen dieses Werk gewidmet ist. Es wendet sich als Lehr- und Fachbuch an Studenten und Entwicklungsingenieure, denen der Einstieg in dieses Gebiet durch den methodischen Ansatz und den Verweis auf die aktuelle internationale Fachliteratur erleichtert wird. Besonders hervorzuheben ist die ausfuhrliche Behandlung von Halbleiter-Heterostukturen.

The #1 Practical Guide to Signal Integrity Design-with Revised Content and New Questions and Problems! This book brings together up-to-the-minute techniques for finding, fixing, and avoiding signal integrity problems in your design. Drawing on his work teaching several thousand engineers and graduate students, world-renowned expert Eric Bogatin systematically presents the root causes of all six families of signal integrity, power integrity, and electromagnetic compatibility problems. Bogatin reviews essential principles needed to understand these problems, and shows how to use best design practices and techniques to prevent or address them early in the design cycle. To help test and reinforce your understanding, this new edition adds questions and problems throughout. Bogatin also presents more examples using free tools, plus new content on high-speed serial links, reflecting input from 130+ of his graduate students. * A fully up-to-date introduction to signal integrity and physical design * New questions and problems designed for both students and professional engineers * How design and technology selection can make or break power distribution network performance * Exploration of key concepts, such as plane impedance, spreading inductance, decoupling capacitors, and capacitor loop inductance * Practical techniques for analyzing resistance, capacitance, inductance, and impedance * Using QUCS to predict waveforms as voltage sources are affected by interconnect impedances * Identifying reflections and crosstalk with free animation tools * Solving signal integrity problems via rules of thumb, analytic approximation, numerical simulation, and measurement * Understanding how interconnect physical design impacts signal integrity * Managing differential pairs and losses * Harnessing the full power of S-parameters in high-speed serial link applications * Designing high-speed serial links associated with differential pairs and lossy lines-including new coverage of eye diagrams * Ensuring power integrity throughout the entire power distribution path * Realistic design guidelines for improving signal integrity, and much more For professionals and students at all levels of experience, this book emphasizes intuitive understanding, practical tools, and engineering discipline, rather than theoretical derivation or mathematical rigor. It has earned a well-deserved reputation as the #1 resource for getting signal integrity designs right-first time, every time.

Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials. The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry.

Polyaniline (PANI) is one of the most common and widely studied conducting polymers due to its excellent electro-chemical and electrical properties and its various applications in areas such as solar cell technologies, drug delivery, organic light emitting diodes (OLEDs), field-effect transistors (FETs), sensors, electro-chromic display, etc. PANI thin films play an important role in energy storage and conversion devices and show great potential in the supercapacitors owing to their high specific capacitance, high flexibility, and low cost. However, no in-depth information about this emerging PANI thin film technology is available. Properties, Techniques, and Applications of Polyaniline (PANI) Thin Films: Emerging Research and Opportunities is an essential publication that focuses on high-throughput synthesis of PANI thin films and their characterization techniques. The book also covers promising applications of PANI thin films and applications including solar cells. Featuring research on topics such as solar cells, post-synthesis treatments, and physiochemistry, this book is ideally designed for scientists, industry practitioners, engineers, managers, academicians, researchers, and students seeking coverage in the areas of polymeric applications.