This book comprises a detailed overview on the role of photocatalysts for environmental remediation, hydrogen production and carbon dioxide reduction. Effective ways to enhance the photocatalytic activity of the material via doping, hybrid material, laser light and nanocomposites have been discussed in this book. The book also further elaborates the role of metal nanoparticles, rare earth doping, sensitizers, surface oxygen vacancy, interface engineering and band gap engineering for enhancing the photocatalytic activity. An approach to recover the photocatalytic material via immobilization is also presented. This book brings to light much of the recent research in the development of such semiconductor photocatalytic systems. The book will thus be of relevance to researchers in the field of: material science, environmental science & technology, photocatalytic applications, newer methods of energy generation & conversion and industrial applications.

Dieses wichtige Referenzwerk behandelt die grundlegenden Konzepte der Photoleitfahigkeit und der photoleitenden Materialien. Mit Photoconductivity and Photoconductive Materials prasentiert Professor Kasap eine massgebliche Zusammenstellung der wesentlichen Grundsatze der Photoleitfahigkeit und stellt eine Auswahl aktueller photoleitfahiger Materialien vor. Der erste Band des zweibandigen Werks beginnt mit einer Darstellung der grundlegenden Konzepte und Definitionen. Es folgt eine Charakterisierung der verschiedenen Techniken auf Grundlage von stationarer, transienter und modulierter Photoleitfahigkeit, u.a. der neuen Methode der Ladungsextraktion durch linear steigende Spannung (CELIV). Auch die Physik der Terahertz-Photoleitfahigkeit sowie die Grundlagen der organischen Halbleiter LSoI werden behandelt. Der zweite Band beginnt mit einem umfassenden UEberblick uber eine Vielzahl unterschiedlicher photoleitfahiger Materialien, wobei der Schwerpunkt auf einige der wichtigsten Photoleiter gelegt wird, darunter hydriertes amorphes Silizium, Cadmium-Quecksilber-Tellurid, verschiedene Roentgenphotoleiter, Diamantfilme, Metallhalogenidperowskite, Nanodrahte und Quantenpunkte. Auch die Anwendungen der photoleitenden Antenne werden eroertert. Das Werk, das zahlreiche Beitrage fuhrender Autoren auf diesem Fachgebiet enthalt, bietet den Leserinnen und Lesern ausserdem: * Eine grundliche Einfuhrung in die Charakterisierung von Halbleitern mit Hilfe von Techniken der Photoleitfahigkeit, insbesondere gleichmassiger Beleuchtung und Phototrager-Gittertechniken * Eine umfassende Darstellung organischer Photoleiter mitsamt Informationen zu Photoerzeugung, Transport und Anwendungen im Druckbereich * Praktische Eroerterungen der transienten Lichtleitfahigkeit im Flugzeitverfahren inklusive Experimentiertechniken und Interpretationshinweisen * Eine eingehende Betrachtung der transienten Photoleitfahigkeit organischer Halbleiterschichten und neuartiger Techniken der transienten Photoleitfahigkeit Photoconductivity and Photoconductive Materials ist nicht nur ein wichtiges Referenzwerk fur Physiker in der Forschung, Materialwissenschaftler und Elektroingenieure, sondern auch ein unverzichtbares Nachschlagewerk fur Doktoranden und Studierende hoeherer Semester, die sich mit dem Bereich der optoelektronischen Materialien beschaftigen, sowie fur Forschende in der Industrie. * Ein umfassendes zweibandiges Werk mit Beitragen fuhrender Fachautoren, herausgegeben von einem angesehenen Forscher auf dem Gebiet der Photoleitfahigkeit

This modern text provides detailed coverage of the important physical processes underpinning semiconductor devices. Advanced analysis of the optical properties of semiconductors without the requirement of complex mathematical formalism allows clear physical interpretation of all obtained results. The book describes fundamental aspects of solid-state physics and the quantum mechanics of electron-photon interactions, in addition to discussing in detail the photonic properties of bulk and quantum well semiconductors. The final six chapters focus on the physical properties of several widely-used photonic devices, including distributed feedback lasers, vertical-cavity surface-emitting lasers, quantum dot lasers, and quantum cascade lasers. This book is ideal for graduate students in physics and electrical engineering and a useful reference for optical scientists.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, worldwide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such 'strongly correlated' solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminum wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together leading research in this growth field.

This book first provides readers with an introduction to the underlying physics and state-of-the-art application of photon counting detectors for X-ray imaging. The authors explain that a photon-counting imaging detector can realize quantitative analysis because the detector can derive X-ray attenuation information based on the analysis of intensity changes of individual X-ray. To realize this analysis, it is important to consider the physics of an object and detector material. In this book, the authors introduce a novel analytical procedure to create quantitative X-ray images for medical diagnosis.

This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, GaP, ZnSe, and NaAlSi. The structural, optical, vibrational, and magnetic properties are discussed, in addition to transport and phase transformations.

Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.

The Acclaimed RF Microelectronics Best-Seller, Expanded and Updated for the Newest Architectures, Circuits, and Devices Wireless communication has become almost as ubiquitous as electricity, but RF design continues to challenge engineers and researchers. In the 15 years since the first edition of this classic text, the demand for higher performance has led to an explosive growth of RF design techniques. In RF Microelectronics, Second Edition, Behzad Razavi systematically teaches the fundamentals as well as the state-of-the-art developments in the analysis and design of RF circuits and transceivers. Razavi has written the second edition to reflect today's RF microelectronics, covering key topics in far greater detail. At nearly three times the length of the first edition, the second edition is an indispensable tome for both students and practicing engineers. With his lucid prose, Razavi now Offers a stronger tutorial focus along with hundreds of examples and problems Teaches design as well as analysis with the aid of step-by-step design procedures and a chapter dedicated to the design of a dual-band WiFi transceiver Describes new design paradigms and analysis techniques for circuits such as low-noise amplifiers, mixers, oscillators, and frequency dividers This edition's extensive coverage includes brand new chapters on mixers, passive devices, integer-N synthesizers, and fractional-N synthesizers. Razavi's teachings culminate in a new chapter that begins with WiFi's radio specifications and, step by step, designs the transceiver at the transistor level. Coverage includes Core RF principles, including noise and nonlinearity, with ties to analog design, microwave theory, and communication systems An intuitive treatment of modulation theory and wireless standards from the standpoint of the RF IC designer Transceiver architectures such as heterodyne, sliding-IF, directconversion, image-reject, and low-IF topologies. Low-noise amplifiers, including cascode common-gate and commonsource topologies, noise-cancelling schemes, and reactance-cancelling configurations Passive and active mixers, including their gain and noise analysis and new mixer topologies Voltage-controlled oscillators, phase noise mechanisms, and various VCO topologies dealing with noisepower-tuning trade-offs All-new coverage of passive devices, such as integrated inductors, MOS varactors, and transformers A chapter on the analysis and design of phase-locked loops with emphasis on low phase noise and low spur levels Two chapters on integer-N and fractional-N synthesizers, including the design of frequency dividers Power amplifier principles and circuit topologies along with transmitter architectures, such as polar modulation and outphasing

This book focuses on organic semiconductors with particular attention paid to their use as photovoltaic devices. It addresses a fundamental and hitherto overlooked concept in the field of organic optoelectronics, namely the role that sub-gap states play in the performance of organic semiconducting devices. From a technological point of view, organic semiconductor-based devices are of significant interest due to their lightweight, ease of processability, conformal flexibility, and potentially low cost and low embodied energy production. Motivated by these rather unique selling points, the performance of organic semiconductors has been a subject of multidisciplinary study for more than 60 years with steady progress in applications such as solar cells, transistors, light emitting diodes, and various sensors. The book begins with a review of the main electro-optical phenomena in organic solar cells and presents a new method for measuring exciton diffusion lengths based on a low-quencher-content device structure. Furthermore, the book reveals how mid-gap trap states are a universal feature in organic semiconductor donor-acceptor blends, unexpectedly contributing to charge generation and recombination, and having profound impact on the thermodynamic limit of organic photovoltaic devices. Featuring cutting-edge experimental observations supported with robust and novel theoretical arguments, this book delivers important new insight as to the underlying dynamics of exciton generation and diffusion, charge transfer state dissociation, and indeed the ultimate fate of photogenerated free carriers.

Opto-electronics and electronics are likely to change dramatically in the future. This superb text, written by a collection of acclaimed international researchers, is dedicated to low-dimensional nitride semiconductors, and provides the key to modern electronics, opto-electronics, and nanotechnology. Gil explores why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.

This book deals with existing technologies of solar energy conversion as well as novel methods under consideration in academic and commercial R&D sites. The experimental results presented in the work are well crafted by both analytical and first-principle numerical simulations. The book highlights the real potential for economically justified use of solar energy at every household and/or commercial solar farms. The ever-improving methods of thin-film epitaxial growth combined with a better understanding of the sun light absorption and antireflection are highlighted. While there was a period when the material quality was considered to be cornerstone of the conversion efficiency followed by substantial efforts to optimize multiple-cell architecture, it became clear that many old ideas such as variable band gap, multi-junction intrinsic region, as well as solar tracking mechanisms offer new possibilities for improved harvesting of energy. Amplifying the importance of materials selection efficient design of the photo-voltaic elements various aspects of the production cost and the impact on the environment are discussed. In addition, the eligibility of the proposed production technologies in the current photovoltaic market are evaluated and confirmed.

This book introduces the foundations and fundamentals of electronic circuits. It broadly covers the subjects of circuit analysis, as well as analog and digital electronics. It features discussion of essential theorems required for simplifying complex circuits and illustrates their applications under different conditions. Also, in view of the emerging potential of Laplace transform method for solving electrical networks, a full chapter is devoted to the topic in the book. In addition, it covers the physics and technical aspects of semiconductor diodes and transistors, as well as discrete-time digital signals, logic gates, and combinational logic circuits. Each chapter is presented as complete as possible, without the reader having to refer to any other book or supplementary material. Featuring short self-assessment questions distributed throughout, along with a large number of solved examples, supporting illustrations, and chapter-end problems and solutions, this book is ideal for any physics undergraduate lecture course on electronic circuits. Its use of clear language and many real-world examples make it an especially accessible book for students unfamiliar or unsure about the subject matter.

This book offers a primer on the fundamental theory of Andreev reflection, a fundamental process in the motion of a Cooper pair, which dominates low-energy electronic transport properties in superconductor junctions including differential conductance and Josephson current. The book concisely describes how Andreev reflection impacts the low-energy physics of electronic transport especially in topologically non-trivial superconductor junctions. In addition, it includes an introduction to topological superconductors, covering topological classification, chiral and helical superconductors, and topological edges. The book is based on the author's lecture notes, used in his intensive lectures and while supervising his upper undergraduate and early graduate students. To fully benefit from this concise primer, readers only need an undergraduate background in quantum mechanics and statistical mechanics. Further, by highlighting Josephson junctions of topological superconductors, the book offers readers a glimpse into cutting-edge topics.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics.

This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum.

This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices.

Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling.

The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.

This book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences. The book covers all the basic aspects of electronics engineering, from electronic materials to devices, and then to basic electronic circuits. The book can be used for freshman (first year) and sophomore (second year) courses in undergraduate engineering. It can also be used as a supplement or primer for more advanced courses in electronic circuit design. The book uses a simple narrative style, thus simplifying both classroom use and self study. Numerical values of dimensions of the devices, as well as of data in figures and graphs have been provided to give a real world feel to the device parameters. It includes a large number of numerical problems and solved examples, to enable students to practice. A laboratory manual is included as a supplement with the textbook material for practicals related to the coursework. The contents of this book will be useful also for students and enthusiasts interested in learning about basic electronics without the benefit of formal coursework.

This accessible textbook offers a novel, concept-led approach to superconducting electronics, using the COMSOL Multiphysics software to help describe fundamental principles in an intuitive manner. Based on a course taught by the author and aimed primarily at engineering students, the book explains concepts effectively and efficiently, uncovering the "shortcut" to understanding each topic, enabling readers to quickly grasp the underlying essence. The book is divided into two main parts; the first part provides a general introduction to key topics encountered in superconductivity, illustrated using COMSOL simulations based on time-dependent Ginzburg-Landau equations and avoiding any deeply mathematical derivations. It includes numerous worked examples and problem sets with tips and solutions. The second part of the book is more conventional in nature, providing detailed derivations of the basic equations from first principles. This part covers more advanced topics, including the BCS-Gor'kov-Eliashberg approach to equilibrium properties of superconductors, the derivation of kinetic equations for nonequilibrium superconductors, and the derivation of time-dependent Ginzburg-Landau equations, used as the basis for COMSOL modeling in the first part. Supported throughout by an extensive library of COMSOL Multiphysics animations, the book serves as a uniquely accessible introduction to the field for engineers and others with a less rigorous background in physics and mathematics. However, it also features more detailed mathematical background for those wishing to delve further into the subject.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

This book is a very comprehensive textbook covering in great depth all the electricity and magnetism. The 2nd edition includes new and revised figures and exercises in many of the chapters, and the number of problems and exercises for the student is increased. In the 1st edition, emphasis much was made of superconductivity, and this methodology will be continued in the new edition by strengthening of the E-B analogy. Many of the new exercises and problems are associated with the E-B analogy, which enables those teaching from the book to select suitable teaching methods depending on the student's ability and courses taken, whether physics, astrophysics, or engineering. Changes in the chapters include a detailed discussion of the equivector-potential surface and its correspondence between electricity and magnetism. The shortcomings of using the magnetic scalar potential are also explained. The zero resistivity in a magnetic material showing perfect diamagnetism can be easily proved. This textbook is an ideal text for students, who are competent in calculus and are taking physics, astrophysics, or engineering at degree level. It is also useful as a reference book for the professional scientist.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book deals with the study of superconductivity in systems with coexisting wide and narrow bands. It has been previously suggested that superconductivity can be enhanced in systems with coexisting wide and narrow bands when the Fermi level is near the narrow band edge. In this book, the authors study two problems concerning this mechanism in order to: (a) provide a systematic understanding of the role of strong electron correlation effects, and (b) propose a realistic candidate material which meets the ideal criteria for high-Tc superconductivity. Regarding the role of strong correlation effects, the FLEX+DMFT method is adopted. Based on systematic calculations, the pairing mechanism is found to be indeed valid even when the strong correlation effect is considered within the formalism. In the second half of the book, the authors propose a feasible candidate material by introducing the concept of the "hidden ladder" electronic structure, arising from the combination of the bilayer lattice structure and the anisotropic orbitals of the electrons. As such, the book contributes a valuable theoretical guiding principle for seeking unknown high-Tc superconductors.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.