Ruthenate materials have come into focus recently because of their very interesting magnetic and superconducting properties. From the first international conference on this topic, the present volume has emerged as a first coherent account of the considerable body of work, both theoretical and experimental, gathered in this field within a short time span. The book has been written in the form of a set of lectures and tutorial reviews with the aim of providing the research community with both a comprehensive and modern source of reference and a tutorial introduction for postgraduate students and nonspecialists working in related areas.

Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * Describes FD/SOI MOSFETs and 3-D FinFETs in detail * Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM * Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time * Projects potential nanoscale UTB CMOS performances * Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Because the new high-temperature superconductors cannot be grown as large single crystals, interfaces and junctions play an important role in their properties. The chapters in this book, each by leading researchers in the field, examine the state of our understanding of such interfaces.
Chapters cover such topics as studies of YCBO films by transmission-electron, scanning-tunneling, and atomic-force microscopy; microstructure, interfacial interactions, and twin boundary structures in YCBO films; grain-boundary Josephson junctions; and overlayer formation.

This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.

This is the first volume of a comprehensive two-volume treatise on superconductivity that represents the first such publication since the earlier work by R. Parks. It systematically reviews the basic physics and recent advances in the field. Leading researchers describe the state of the art in conventional phonon-induced superconductivity, high-Tc superconductivity, and novel superconductivity. After an introduction and historical overview, the leaders in the special fields of research give a comprehensive survey of the basics and the state of the art in chapters covering the entire field of superconductivity, including conventional and unconventional superconductors. Important new results are reported in a manner intended to stimulate further research. Numerous illustrations, diagrams and tables make this book especially useful as a reference work for students, teachers, and researchers. The second volume treats novel superconductors.

Thermoelectric devices could play an important role in making efficient use of our energy resources but their efficiency would need to be increased for their wide scale application. There is a multidisciplinary search for materials with an enhanced thermoelectric responses for use in such devices. This volume covers the latest ideas and developments in this research field, covering topics ranging from the fabrication and characterization of new materials, particularly those with strong electron correlation, use of nanostructured, layered materials and composites, through to theoretical work to gain a deeper understanding of thermoelectric behavior. It should be a useful guide and stimulus to all working in this very topical field.

This textbook lays out the fundamentals of electronic materials and devices on a level that is accessible to undergraduate engineering students with no prior coursework in electromagnetism and modern physics. The initial chapters present the basic concepts of waves and quantum mechanics, emphasizing the underlying physical concepts behind the properties of materials and the basic principles of device operation. Subsequent chapters focus on the fundamentals of electrons in materials, covering basic physical properties and conduction mechanisms in semiconductors and their use in diodes, transistors, and integrated circuits. The book also deals with a broader range of modern topics, including magnetic, spintronic, and superconducting materials and devices, optoelectronic and photonic devices, as well as the light emitting diode, solar cells, and various types of lasers. The last chapter presents a variety of materials with specific novel applications, such as dielectric materials used in electronics and photonics, liquid crystals, and organic conductors used in video displays, and superconducting devices for quantum computing. Clearly written with compelling illustrations and chapter-end problems, Rezende's Introduction to Electronic Materials and Devices is the ideal accompaniment to any undergraduate program in electrical and computer engineering. Adjacent students specializing in physics or materials science will also benefit from the timely and extensive discussion of the advanced devices, materials, and applications that round out this engaging and approachable textbook.

This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption. 2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.

Superconductivity in materials without inversion symmetry in the respective crystal structures occurs in the presence of antisymmetric spin-orbit coupling as a consequence of an emerging electric field gradient. The superconducting condensate is then a superposition of spin-singlet and spin-triplet Cooper pairs. This scenario accounts for various experimental findings such as nodes in the superconducting gap or extremely large upper critical magnetic fields. Spin-triplet pairing can occur in non-centrosymmetric superconductors in spite of Anderson's theorem that spin-triplet pairing requires a crystal structure that exhibits inversion symmetry. This book, authored and edited by leading researchers in the field, is both an introduction to and overview on this exciting branch of novel superconductors. Its self-contained and tutorial style makes it particularly suitable for self-study and as source of teaching material for special seminars and courses. At the same time it constitutes an up-to-date and authoritative reference for anyone working in this exciting field.

The original Russian edition is based on a lecture course given by the author and provides a modern treatment of the physics of superconductors with special attention paid to the physical interpretation of the phenomena. This revised English translation has been enlarged by the inclusion of such new developments as High Temperature Superconductivity, and, as such, is the most up-to-date textbook on the subject available.
The editor, Paul M ller, is himself a winner of the Walter Schottky Award for Solid State Research.

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive to surface structure and morphology. This book serves as an introduction to RHEED for beginners and describes detailed experimental and theoretical treatments for experts, explaining how to analyze RHEED patterns. For beginners the principles of electron diffraction are explained and many examples of the interpretation of RHEED patterns are described. The second part of the book contains detailed descriptions of RHEED theory. The third part applies RHEED to the determination of surface structures, gives detailed descriptions of the effects of disorder, and critically reviews the mechanisms contributing to RHEED intensity oscillations. This unified and coherent account will appeal to both graduate students and researchers in the study of molecular beam epitaxial growth.

Ultrafast Phenomena XVII presents the latest advances in ultrafast science, including both ultrafast optical technology and the study of ultrafast phenomena. It covers picosecond, femtosecond and attosecond processes relevant to applications in physics, chemistry, biology, and engineering. Ultrafast technology has a profound impact in a wide range of applications, amongst them biomedical imaging, chemical dynamics, frequency standards, material processing, and ultrahigh speed communications. This book summarizes the results presented at the 17th International Conference on Ultrafast Phenomena and provides an up-to-date view of this important and rapidly advancing field.

This is a benchmark reference work on Cryogenic Engineering which chronicles the major developments in the field. Starting with an historical background, this book reviews the development of data resources now available for cryogenic fields and properties of materials. It presents the latest changes in cryopreservation and the advances over the past 50 years. The book also highlights an exceptional reference listing to provide referral to more details.

From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

The present volume 45 of Advances in Solid-State Physics contains the written versions of selected invited lectures from the spring meeting of the Arbeitskreis Festk rperphysik of the Deutsche Physikalische Gesellschaft in the World Year of Physics 2005, the Einstein Year, which was held from 4 - 11 March 2005 in Berlin, Germany. Many topical talks given at the numerous symposia are included. Most of these were organized collaboratively by several of the divisions of the Arbeitskreis.

The book presents, to some extent, the status of the field of solid-state physics in 2005 not only in Germany but also internationally. It is ''nanoscience'', namely the physics of quantum dots and wires, electrical transport, optical properties, spin transport in nanostructures, and magnetism on the nanoscale, that is of central interest to the physics community. Also, soft matter and biological systems are covered.

Thin film mechanical behavior and stress presents a technological challenge for materials scientists, physicists and engineers. This book provides a comprehensive coverage of the major issues and topics dealing with stress, defect formation, surface evolution and allied effects in thin film materials. Physical phenomena are examined from the continuum down to the sub-microscopic length scales, with the connections between the structure of the material and its behavior described. Theoretical concepts are underpinned by discussions on experimental methodology and observations. Fundamental scientific concepts are embedded through sample calculations, a broad range of case studies with practical applications, thorough referencing, and end of chapter problems. With solutions to problems available on-line, this book will be essential for graduate courses on thin films and the classic reference for researchers in the field.

A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general.

The present volume in the New Series of Landolt-Boernstein provides critically evaluated data on phase diagrams, crystallographic and thermodynamic data of ternary alloy systems. Reliable phase diagrams provide materials scientists and engineers with basic information important for fundamental research, development and optimization of materials. The often conflicting literature data have been critically evaluated by Materials Science International Team, MSIT (R), a team working together since many years, and with expertise in a broad range of methods, materials and applications. All evaluation reports published here have undergone a thorough review process in which the reviewers had access to all the original data. The data for each ternary system are provided in a standard format which includes text, tables and diagrams. The topics presented are literature data, binary systems, solid phases, pseudobinary systems, invariant equilibria, liquidus, solidus, and solvus surfaces, isothermal sections, temperature-composition sections, thermodynamics, materials properties and applications, and miscellanea. Finally, a detailed bibliography of all cited references is provided. In the present volume IV/1C1 selected semiconductor ternary alloy systems are considered.

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive to surface structure and morphology. This book serves as an introduction to RHEED for beginners and describes detailed experimental and theoretical treatments for experts, explaining how to analyze RHEED patterns. For beginners the principles of electron diffraction are explained and many examples of the interpretation of RHEED patterns are described. The second part of the book contains detailed descriptions of RHEED theory. The third part applies RHEED to the determination of surface structures, gives detailed descriptions of the effects of disorder, and critically reviews the mechanisms contributing to RHEED intensity oscillations. This unified and coherent account will appeal to both graduate students and researchers in the study of molecular beam epitaxial growth.

From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

This book provides comprehensive coverage of stress, defect formation and surface evolution in thin films. With its balanced coverage of theory, experiment and simulation and many homework problems, the text will be essential reading in senior undergraduate and graduate courses on thin films.

The authors illustrate the basic physics and materials science of conjugated polymers and their interfaces, particularly, but not exclusively, as they are applied to polymer-based light emitting diodes. The approach is to describe the basic physical and associated chemical principles that apply to these materials, which in many instances are different from those that apply to their inorganic counterparts. The main aim of the authors is to highlight specific issues and properties of polymer surfaces and interfaces that are relevant in the context of the emerging field of polymer-based electronics in general, and polymer-based light emitting diodes in particular. Both theoretical and experimental methods used in the study of these systems are discussed. This book will be of interest to graduate students and research workers in departments of physics, chemistry, electrical engineering and materials sciences studying polymer surfaces and interfaces and their application in polymer-based electronics.

This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.