This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

Metal halide perovskites are the hottest materials currently.This unique compendium covers systematically the fundamental aspects of synthesis, properties, and applications of metal halide perovskites that exhibit unique properties and useful functionalities.Written for beginners and practitioners, this useful reference text provides a good balance between fundamental concepts/principles and related recent researches with many highlighted examples.This volume benefits researchers, practitioners, graduate students in materials chemistry/nanochemistry, physical chemistry and semiconductors.

This "Third Edition" updates a landmark text with the latest findings

"The Third Edition" of the internationally lauded "Semiconductor Material and Device Characterization" brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the "Third Edition" set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

"Semiconductor Material and Device Characterization" remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated "Third Edition," including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, "Semiconductor Material and Device Characterization" remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

This concise volume provides an introduction to the working principles, design, and construction of air-stable inverted organic light-emitting diodes (OLEDs), which lead to the realization of practical flexible electronics. The first part of the book reviews the history of the three generations of inverted OLEDs: hybrid organic inorganic light-emitting diodes (HOILEDs), metal oxides and organic electron injection layer, describing the materials, fabrication techniques, device structure, applications, and technological challenges involved in each case. The second part of the book focuses on the carrier injection mechanism in OLEDs. The book will be of interest to students and researchers working on organic optoelectronics.

This primer is a collection of notes based on lectures that were originally given at IIT Madras (India) and at IFT Madrid (Spain). It is a concise and pragmatic course on applied holography focusing on the basic analytic and numerical techniques involved. The presented lectures are not intended to provide all the fundamental theoretical background, which can be found in the available literature, but they concentrate on concrete applications of AdS/CFT to hydrodynamics, quantum chromodynamics and condensed matter. The idea is to accompany the reader step by step through the various benchmark examples with a classmate attitude, providing details for the computations and open-source numerical codes in Mathematica, and sharing simple tricks and warnings collected during the author's research experience. At the end of this path, the reader will be in possess of all the fundamental skills and tools to learn by him/herself more advanced techniques and to produce independent and novel research in the field.

This book highlights the origin of low external quantum efficiency for deep ultraviolet light-emitting diodes (DUV LEDs). In addition, it puts forward solutions for increasing the internal quantum efficiency and the light extraction efficiency of DUV LEDs. The book chiefly concentrates on approaches that can be used to improve the crystalline quality, increase carrier injection, reduce the polarization-induced electric field within multiple quantum wells, suppress the TM polarization emission, and enhance the light escape from the semiconductor layer. It also demonstrates insightful device physics for DUV LEDs, which will greatly benefit the optoelectronic community.

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

This monograph presents an intuitive theory of trial wave functions for strongly interacting fermions in fractional quantum Hall states. The correlation functions for the proposed fermion interactions follow a novel algebraic approach that harnesses the classical theory of invariants and semi-invariants of binary forms. This approach can be viewed as a fitting and far-reaching generalization of Laughlin's approach to trial wave functions. Aesthetically viewed, it illustrates an attractive symbiosis between the theory of invariants and the theory of correlations. Early research into numerical diagonalization computations for small numbers of electrons shows strong agreement with the constructed trial wave functions.The monograph offers researchers and students of condensed matter physics an accessible discussion of this interesting area of research.

This compact undergraduate textbook provides a concise yet thorough introduction to the fundamentals of solid-state physics, while also briefly discussing the historical context surrounding key scholars in the field. The vivid explanations and unique didactic approach adopted in the book aim to generate interest in these subjects while also serving as a motivating primer and supporting companion for studying more detailed and advanced textbooks in solid-state physics. The book is also suitable as a quick refresher for students preparing for examinations. The third edition features many extensions, including an up-to-date discussion of topological materials, a rapidly developing area at the forefront of solid-state physics. Primarily concentrating on the electric and magnetic properties of materials, the book will benefit undergraduate students in the fields of physics, materials science, and electrical engineering.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch-De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree-Fock equations, and Landau's Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg-Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov's flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

This textbook lays out the fundamentals of electronic materials and devices on a level that is accessible to undergraduate engineering students with no prior coursework in electromagnetism and modern physics. The initial chapters present the basic concepts of waves and quantum mechanics, emphasizing the underlying physical concepts behind the properties of materials and the basic principles of device operation. Subsequent chapters focus on the fundamentals of electrons in materials, covering basic physical properties and conduction mechanisms in semiconductors and their use in diodes, transistors, and integrated circuits. The book also deals with a broader range of modern topics, including magnetic, spintronic, and superconducting materials and devices, optoelectronic and photonic devices, as well as the light emitting diode, solar cells, and various types of lasers. The last chapter presents a variety of materials with specific novel applications, such as dielectric materials used in electronics and photonics, liquid crystals, and organic conductors used in video displays, and superconducting devices for quantum computing. Clearly written with compelling illustrations and chapter-end problems, Rezende's Introduction to Electronic Materials and Devices is the ideal accompaniment to any undergraduate program in electrical and computer engineering. Adjacent students specializing in physics or materials science will also benefit from the timely and extensive discussion of the advanced devices, materials, and applications that round out this engaging and approachable textbook.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

This book offers an overview of power electronic applications in the study of power integrated circuit (IC) design, collecting novel research ideas and insights into fast transient response to prevent the output voltage from dropping significantly at the undershoot. It also discusses techniques and training to save energy and increase load efficiency, as well as fast transient response and high efficiency, which are the most important factors for consumer products that implement power IC. Lastly, the book focuses on power electronics for system loop analysis and optimal compensation design to help users and engineers implement their applications. The book is a valuable resource for university researchers, power IC R&D engineers, application engineers and graduate students in power electronics who wish to learn about the power IC design principles, methods, system behavior, and applications in consumer products.

This book shows the different molecular devices used for solar energy conversion and storage and the important characterization techniques for this kind of device. It has five chapters describing representative molecule-based solar cells, such as organic solar cells, dye-sensitized solar cells and hybrid solar cells (perovskite solar cell and quantum dots solar cells). It also includes two chapters demonstrating the use of molecular devices in the areas of solar fuel, water splitting and carbon dioxide reduction. There are further two chapters with interesting examples of solar energy storage related devices, like solar flow battery, solar capacitor and solar energy-thermal energy storage. Three chapters introduce important techniques used to characterize, investigate and evaluate the mechanism of molecular devices. The final chapter discusses the stability of perovskite solar cells. This book is relevant for a wide readership, and is particularly useful for students, researchers and industrial professionals who are working on molecular devices for solar energy utilization.

This thesis presents first observations of superconductivity in one- or two-atomic-scale thin layer materials. The thesis begins with a historical overview of superconductivity and the electronic structure of two-dimensional materials, and mentions that these key ingredients lead to the possibility of the two-dimensional superconductor with high phase-transition temperature and critical magnetic field. Thereafter, the thesis moves its focus onto the implemented experiments, in which mainly two different materials thallium-deposited silicon surfaces and metal-intercalated bilayer graphenes, are used. The study of the first material is the first experimental demonstration of both a gigantic Rashba effect and superconductivity in the materials supposed to be superconductors without spatial inversion symmetry. The study of the latter material is relevant to superconductivity in a bilayer graphene, which was a big experimental challenge for a decade, and has been first achieved by the author. The description of the generic and innovative measurement technique, highly effective in probing electric resistivity of ultra-thin materials unstable in an ambient environment, makes this thesis a valuable source for researchers not only in surface physics but also in nano-materials science and other condensed-matter physics.

This book presents a collection of invited research and review contributions on recent advances in (mainly) theoretical condensed matter physics, theoretical chemistry, and theoretical physics. The volume celebrates the 90th birthday of N.H. March (Emeritus Professor, Oxford University, UK), a prominent figure in all of these fields. Given the broad range of interests in the research activity of Professor March, who collaborated with a number of eminent scientists in physics and chemistry, the volume embraces quite diverse topics in physics and chemistry, at various dimensions and energy scales. One thread connecting all these topics is correlation in aggregated states of matter, ranging from nuclear physics to molecules, clusters, disordered condensed phases such as the liquid state, and solid state physics, and the various phase transitions, both structural and electronic, occurring therein. A final chapter leaps to an even larger scale of matter aggregation, namely the universe and gravitation. A further no less important common thread is methodological, with the application of theoretical physics and chemistry, particularly density functional theory and statistical field theory, to both nuclear and condensed matter.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

This book describes the physical basis of microwave electronics and related topics, such as microwave vacuum and microwave semiconductor devices. It comprehensively discusses the main types of microwave vacuum and microwave semiconductor devices, their principles of action, theory, parameters and characteristics, as well as ways of increasing the frequency limit of various devices up to the terahertz frequency band. Further, it applies a unified approach to describe charged particle interaction within electromagnetic fields and the motion laws of charged particles in various media. The book is intended as a manual for researchers and engineers, as well as advanced undergraduate and graduate students.