This book exhibits novel semiconductor black phosphorous (BP) materials that are developed beyond other 2D materials (graphene and TMDs). It accurately reviews their manufacture strategies, properties, characterization techniques and different utilizations of BP-based materials. It clarifies all perspectives alongside down to earth applications which present a future direction in the biomedical, photo, environmental, energy, and other related fields. Hence, the sections accentuate the basic fundamentals, synthesis, properties, applications, state-of-the-art studies about the BP-based materials through detailed reviews. This book is the result of commitments by numerous experts in the field from various backgrounds and expertise. It will appeal to researchers, scientists and in addition understudies from various teaches, for example, semiconductor innovation, energy and environmental science. The book content incorporates industrial applications and fills the gap between the exploration works in the lab and viable applications in related ventures.

This book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences. The book covers all the basic aspects of electronics engineering, from electronic materials to devices, and then to basic electronic circuits. The book can be used for freshman (first year) and sophomore (second year) courses in undergraduate engineering. It can also be used as a supplement or primer for more advanced courses in electronic circuit design. The book uses a simple narrative style, thus simplifying both classroom use and self study. Numerical values of dimensions of the devices, as well as of data in figures and graphs have been provided to give a real world feel to the device parameters. It includes a large number of numerical problems and solved examples, to enable students to practice. A laboratory manual is included as a supplement with the textbook material for practicals related to the coursework. The contents of this book will be useful also for students and enthusiasts interested in learning about basic electronics without the benefit of formal coursework.

This book discusses non-equilibrium quantum many-body dynamics, recently explored in an analog quantum simulator of strongly correlated ultracold atoms. The first part presents a field-theoretical analysis of the experimental observability of the Higgs amplitude mode that emerges as a relativistic collective excitation near a quantum phase transition of superfluid Bose gases in an optical lattice potential. The author presents the dynamical susceptibilities to external driving of the microscopic parameters, taking into account a leading-order perturbative correction from quantum and thermal fluctuations and shows clear signatures of the Higgs mode in these observables. This is the first result that strongly supports the stability of the Higgs mode in three-dimensional optical lattices even in the presence of a spatially inhomogeneous confinement potential and paves the way for desktop observations of the Higgs mode. In the second part, the author applies the semi-classical truncated-Wigner approximation (TWA) to far-from-equilibrium quantum dynamics. Specifically, he considers the recent experiments on quantum-quench dynamics in a Bose-Hubbard quantum simulator. A direct comparison shows remarkable agreement between the numerical results from TWA and the experimental data. This result clearly indicates the potential of such a semi-classical approach in reliably simulating many-body systems using classical computers. The book also includes several chapters providing comprehensive reviews of the recent studies on cold-atomic quantum simulation and various theoretical methods, including the Schwinger-boson approach in strongly correlated systems and the phase-space semi-classical method for far-from-equilibrium quantum dynamics. These chapters are highly recommended to students and young researchers who are interested in semi-classical approaches in non-equilibrium quantum dynamics.

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

This book focuses on the topological fermion condensation quantum phase transition (FCQPT), a phenomenon that reveals the complex behavior of all strongly correlated Fermi systems, such as heavy fermion metals, quantum spin liquids, quasicrystals, and two-dimensional systems, considering these as a new state of matter. The book combines theoretical evaluations with arguments based on experimental grounds demonstrating that the entirety of very different strongly correlated Fermi systems demonstrates a universal behavior induced by FCQPT. In contrast to the conventional quantum phase transition, whose physics in the quantum critical region are dominated by thermal or quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT are controlled by a system of quasiparticles resembling the Landau quasiparticles. The book discusses the modification of strongly correlated systems under the action of FCQPT, representing the "missing" instability, which paves the way for developing an entirely new approach to condensed matter theory; and presents this physics as a new method for studying many-body objects. Based on the authors' own theoretical investigations, as well as salient theoretical and experimental studies conducted by others, the book is well suited for both students and researchers in the field of condensed matter physics.

This book outlines various synthetic approaches, tuneable physical properties, and device applications of core/shell quantum dots (QDs). Core/shell QDs have exhibited enhanced quantum yield (QY), suppressed photobleaching/blinking, and significantly improved photochemical/physical stability as compared to conventional bare QDs. The core-shell structure also promotes the easy tuning of QDs' band structure, leading to their employment as attractive building blocks in various optoelectronic devices. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of core/shell QDs and relevant devices, and to provide a comprehensive introduction and directions for further research in this growing area of nanomaterials research.

This book presents the mechanics of piezoelectric semiconductor structures where the main electromechanical coupling of interest is the interaction between mechanical fields and semiconduction. This volume stands as the first full book treatment of this multi-physical subject from the mechanics angle. The analysis of piezoelectric semiconductor structures and devices is an emerging and rapidly growing interdisciplinary area involving materials, electronics, and solid mechanics. It has direct applications in the new area of piezotronics and piezo-phototronics. The book is theoretical, beginning with a phenomenological framework and progressing to include solutions to problems fundamental to the theory and application. Dr. Yang illustrates how in piezoelectric semiconductors, mechanical fields interact with semiconduction through the piezoelectrically produced electric fields by mechanical loads. This provides the foundation of piezotronic and piezo-phototronic devices in which semiconduction is induced, affected, manipulated, or controlled by mechanical fields. Also discussing composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors as well as thermal effects, the book is an ideal basic reference on the topic for researchers.

This book presents selected peer-reviewed contributions from the 2019 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2019 (Hanoi, Vietnam, 7-10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical-mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

Rudolf P. Huebener presents the field of superconductivity research in a clear and compact way. He vividly describes how this area has developed in many directions since the discovery of superconductivity more than 100 years ago. This concerns materials, experiments on the physical principles, theoretical understanding and technical applications. Among other things, the essential deals with the Meissner-Ochsenfeld effect, magnetic flux quantization, the Josephson effect, the BCS theory and high-temperature superconductivity. This Springer essential is a translation of the original German 1st edition essentials, Geschichte und Theorie der Supraleiter by Rudolf P. Huebener, published by Springer Fachmedien Wiesbaden GmbH, part of Springer Nature in 2017. The translation was done with the help of artificial intelligence (machine translation by the service DeepL.com). A subsequent human revision was done primarily in terms of content, so that the book will read stylistically differently from a conventional translation. Springer Nature works continuously to further the development of tools for the production of books and on the related technologies to support the authors.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures - their optical and electrical properties - are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure-property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schroedinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

Effects of many-body interactions and superconducting correlations have become central questions in the quantum transport community. While most previous works investigating current fluctuations in nanodevices have been restricted to the stationary regime, Seoane's thesis extends these studies to the time domain. It provides relevant information about the time onset of electronic correlations mediated by interactions and superconductivity. This knowledge is essential for the development of fast electronic devices, as well as novel applications requiring fast manipulations, such as quantum information processing. In addition, the thesis establishes contact with issues of broad current interest such as non-equilibrium quantum phase transitions.

Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This book addresses the rapidly developing class of solar cell materials and designed to provide much needed information on the fundamental principles of these materials, together with how these are employed in photovoltaic applications. A special emphasize have been given for the space applications through study of radiation tolerant solar cells. This book present a comprehensive research outlining progress on the synthesis, fabrication and application of solar cells from fundamental to device technology and is helpful for graduate students, researchers, and technologists engaged in research and development of materials.

This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large "family". As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure's electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in the area of condensed matter physics and materials science.

This book focuses on the thermophysical properties of Ge-Sb-Te alloys, which are the most widely used phase change materials, and the technique for measuring them. Describing the measuring procedure and parameter calibration in detail, it provides readers with an accurate method for determining the thermophysical properties of phase change materials and other related materials. Further, it discusses combining thermal and electrical conductivity data to analyze the conduction mechanism, allowing readers to gain an understanding of phase change materials and PCM industry simulation.

This book studies the fundamental aspects of many-body physics in quantum systems open to an external world. Recent remarkable developments in the observation and manipulation of quantum matter at the single-quantum level point to a new research area of open many-body systems, where interactions with an external observer and the environment play a major role. The first part of the book elucidates the influence of measurement backaction from an external observer, revealing new types of quantum critical phenomena and out-of-equilibrium dynamics beyond the conventional paradigm of closed systems. In turn, the second part develops a powerful theoretical approach to study the in- and out-of-equilibrium physics of an open quantum system strongly correlated with an external environment, where the entanglement between the system and the environment plays an essential role. The results obtained here offer essential theoretical results for understanding the many-body physics of quantum systems open to an external world, and can be applied to experimental systems in atomic, molecular and optical physics, quantum information science and condensed matter physics.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.