This is the first of three volumes of the extensively revised and updated second edition of the Handbook of Superconductivity. The past twenty years have seen rapid progress in superconducting materials, which exhibit one of the most remarkable physical states of matter ever to be discovered. Superconductivity brings quantum mechanics to the scale of the everyday world where a single, coherent quantum state may extend over a distance of metres, or even kilometres, depending on the size of a coil or length of superconducting wire. Viable applications of superconductors rely fundamentally on an understanding of this intriguing phenomena and the availability of a range of materials with bespoke properties to meet practical needs. This first volume covers the fundamentals of superconductivity and the various classes of superconducting materials, which sets the context and background for Volumes 2 and 3. Key Features: Covers the depth and breadth of the field Includes contributions from leading academics and industry professionals across the world Provides hands-on guidance to the manufacturing and processing technologies A comprehensive reference, this handbook is suitable for both graduate students and practitioners in experimental physics, materials science and multiple engineering disciplines, including electronic and electrical, chemical, mechanical, metallurgy and others.

This is the second of three volumes of the extensively revised and updated second edition of the Handbook of Superconductivity. The past twenty years have seen rapid progress in superconducting materials, which exhibit one of the most remarkable physical states of matter ever to be discovered. Superconductivity brings quantum mechanics to the scale of the everyday world where a single, coherent quantum state may extend over a distance of metres, or even kilometres, depending on the size of a coil or length of superconducting wire. Viable applications of superconductors rely fundamentally on an understanding of this intriguing phenomena and the availability of a range of materials with bespoke properties to meet practical needs. While the first volume covers the fundamentals of superconductivity and the various classes of superconducting materials, Volume 2 covers processing of the desired superconducting materials into desired forms: bulks, films, wires and junction-based devices. The volume closes with articles on the refrigeration methods needed to put the materials into the superconducting state. Key Features: Covers the depth and breadth of the field Includes contributions from leading academics and industry professionals across the world Provides hands-on guidance to the manufacturing and processing technologies A comprehensive reference, the handbook is suitable for both graduate students and practitioners in experimental physics, materials science, and multiple engineering disciplines, including electronic and electrical, chemical, mechanical, metallurgy and others.

Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.

Three-volumes book "Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors" is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume "Photodetectors" of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

The problem of determining the location of an object (usually called ranging) attracts at present much attention in different areas of applications, among them in ecological and safety devices. Electromagnetic waves along with sound waves are widely used for these purposes. Different aspects of materials with specific magnetic, electric and elastic properties are considered in view of potential application in the design and manufacturing of smart materials. Progress is reported in the fabrication and understanding of in-situ formation and characterization of solid state structures with specified properties. Attention is paid to the observation and study of the mobility of magnetic structures and of the kinetics of magnetic ordering transitions. Looking from a different perspective, one of the outcomes of the ARW is the emphasis on the important role that collective phenomena (like spin waves in systems with a magnetically ordered ground state, or critical currents in superconductors) could play at the design of magnetic-field sensitive sensor materials.

Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

2 Homogeneous superconducting state 210 3 Superconducting phases with broken space symmetries 213 4 Flavor asymmetric quark condensates 219 5 Concluding remarks 221 Acknowledgments 222 References 223 Neutral Dense Quark Matter 225 Mei Huang and Igor Shovkovy 1 Introduction 225 2 Local charge neutrality: homogeneous phase 226 3 Global charge neutrality: mixed phase 234 4 Conclusion 238 References 238 Possibility of color magnetic superconductivity 241 Toshitaka Tatsumi, Tomoyuki Maruyama, and Eiji Nakano 1 Introduction 241 2 What is ferromagnetism in quark matter? 243 3 Color magnetic superconductivity 248 4 Chiral symmetry and magnetism 253 5 Summary and Concluding remarks 258 Acknowledgments 260 References 260 Magnetic Fields of Compact Stars with Superconducting Quark Cores 263 David M. Sedrakian, David Blaschke, and Karen M. Shahabasyan 1 Introduction 263 2 Free Energy 265 3 Ginzburg-Landau equations 267 4 Vortex Structure 269 5 Solution of Ginzburg-Landau Equations 271 6 The Magnetic Field Components 273 7 Summary 275 Acknowledgments 275 References 275 Thermal Color-superconducting Fluctuations in Dense Quark Matter 277 D. N.

This volume contains the proceedings of the 2004 University of Miami Workshop on Unconventional Superconductivity. The workshop was the fourth in a series of successful meetings on High-T Superconductivity and C related topics, which took place at the James L. Knight Physics Building on the University of Miami campus in Coral Gables, Florida, in January 1991, 1995, 1999, and 2004. The workshop consisted of two consecutive events: 1. NATO Advanced Research Workshop (ARW) on New Challenges in Superconductivity: Experimental Advances and Emerging Theories, held on January 11-14, 2004; 2. Symposium on Emerging Mechanisms for High Temperature Superconductivity (SEMHTS), held on January 15-16, 2004. It is hard to write a balanced preface to a volume like this one, yet at least we try to offer the reader a taste of what was happening in this workshop. There were close to a hundred scientists from around the world, albeit fewer Russians than we had originally hoped for. Nevertheless, the workshop was very lively and we trust that this is demonstrated in this volume. The workshop included high-quality presentations on state of the art works, yet a key issue, discussed by many, was how homogeneous the cuprates are. STM data, as well as other reports, showed that the cuprate superconductors (SC's) studied were inhomogeneous, especially in the underdoped regime; while experiments, like ARPES and magnetoresistance have established the existence of a Fermi Surface (FS), at least above some doping level, in the cuprates.

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.
Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

The present volume in the New Series of Landolt-Boernstein provides critically evaluated data on phase diagrams, crystallographic and thermodynamic data of ternary alloy systems. Reliable phase diagrams provide materials scientists and engineers with basic information important for fundamental research, development and optimization of materials. The often conflicting literature data have been critically evaluated by Materials Science International Team, MSIT (R), a team working together since many years, and with expertise in a broad range of methods, materials and applications. All evaluation reports published here have undergone a thorough review process in which the reviewers had access to all the original data. The data for each ternary system are provided in a standard format which includes text, tables and diagrams. The topics presented are literature data, binary systems, solid phases, pseudobinary systems, invariant equilibria, liquidus, solidus, and solvus surfaces, isothermal sections, temperature-composition sections, thermodynamics, materials properties and applications, and miscellanea. Finally, a detailed bibliography of all cited references is provided. In the present volume IV/1C1 selected semiconductor ternary alloy systems are considered.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on "Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment" held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

This book from MRS dedicated to III-Nitrides, focuses on recent developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers ( 400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Introduction to Semiconductor Device Physics is a popular and established text that offers a thorough introduction to the underlying physics of semiconductor devices. It begins with a review of basic solid state physics, then goes on to describe the properties of semiconductors including energy bands, the concept of effective mass, carrier concentration, and conduction in more detail. Thereafter the book is concerned with the principles of operation of specific devices, beginning with the Gunn Diode and the p-n junction. The remaining chapters cover the on specific devices, including the LED, the bipolar transistor, the field-effect transistor, and the semiconductor laser. The book concludes with a chapter providing a brief introduction to quantum theory. Not overtly mathematical, Introduction to Semiconductor Device Physics introduces only those physical concepts required for an understanding of the semiconductor devices being considered. The author's intuitive style, coupled with an extensive set of worked problems, make this the ideal introductory text for those concerned with understanding electrical and electronic engineering, applied physics, and related subjects.

Nanometer scale physics is progressing rapidly: the top-down approach of semiconductor technology will soon encounter the scale of the bottom-up approaches of supramolecular chemistry and spatially localized excitations in ionic crystals. Advances in this area have already led to applications in optoelectronics. More may be expected.

This book deals with the role of structure confinement in the spectroscopic characteristics of physical systems. It examines the fabrication, measurement and understanding of the relevant structures. It reports progress in the theory and in experimental techniques, starting with the consideration of fundamental principles and leading to the frontiers of research. The subjects dealt with include such spatially resolved structures as quantum wells, quantum wires, quantum dots, and luminescence, in both theoretical and practical terms.

Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.

This is the first volume of a comprehensive two-volume treatise on superconductivity that represents the first such publication since the earlier work by R. Parks. It systematically reviews the basic physics and recent advances in the field. Leading researchers describe the state of the art in conventional phonon-induced superconductivity, high-Tc superconductivity, and novel superconductivity. After an introduction and historical overview, the leaders in the special fields of research give a comprehensive survey of the basics and the state of the art in chapters covering the entire field of superconductivity, including conventional and unconventional superconductors. Important new results are reported in a manner intended to stimulate further research. Numerous illustrations, diagrams and tables make this book especially useful as a reference work for students, teachers, and researchers. The second volume treats novel superconductors.

Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring.

The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

The manipulation of electric charge in bulk semiconductors and their heterostructures is the basis of nearly all modern electronic and opto-electronic devices. Recent studies of spin-dependent phenomena in semiconductors open the door to technologies that harness the spin of the electron in semiconductor devices. In addition to providing spin-dependent analogies that extend existing electronic devices into the realm of semiconductor "spintronics," the spin degree of freedom also offers prospects for fundamentally new functionality in the quantum domain, ranging from storage to computation. This is likely to play a crucial role in the information technologies in the 21st century. This book, written by a team of experts, provides an overview of emerging concepts in this rapidly developing field. The topics range from spin transport and injection in semiconductors and their heterostructures to coherent processes and computation in semiconductor quantum structures and microcavities.

This book presents the current level of understanding of the structural, electronic and optical properties of amorphous semiconductors. As amorphous materials depart significantly from the crystalline counterparts, some of the basic problems associated with the validity of the effective mass approximation, whether K is a good quantum number, and concepts of phonons and excitons will be addressed in detail. A significant part of the book is devoted to present recent progress made in the understanding of light-induced degradations in amorphous semiconductors, which is regarded as the most limiting problem in device applications. The monograph presents a comprehensive review of both experimental and theoretical studies on amorphous semiconductors.