A new experimental method - the "Stiffnessometer", is developed to measure elementary properties of a superconductor, including the superconducting stiffness and the critical current. This technique has many advantages over existing methods, such as: the ability to measure these properties while minimally disturbing the system; the ability to measure large penetration depths (comparable to sample size), as necessary when approaching the critical temperature; and the ability to measure critical currents without attaching contacts and heating the sample. The power of this method is demonstrated in a study of the penetration depth of LSCO, where striking evidence is found for two separate critical temperatures for the in-plane and out-of-plane directions. The results in the thesis are novel, important and currently have no theoretical explanation. The stiffnessometer in a tool with great potential to explore new grounds in condensed matter physics.

A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers

The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.

Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:

• SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
• Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
• Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits

With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The authors also introduce the operating principles of other devices, including the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs. The book comes with a complete set of homework problems and a web link to MATLAB programs.

Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.

This concise volume provides an introduction to the working principles, design, and construction of air-stable inverted organic light-emitting diodes (OLEDs), which lead to the realization of practical flexible electronics. The first part of the book reviews the history of the three generations of inverted OLEDs: hybrid organic inorganic light-emitting diodes (HOILEDs), metal oxides and organic electron injection layer, describing the materials, fabrication techniques, device structure, applications, and technological challenges involved in each case. The second part of the book focuses on the carrier injection mechanism in OLEDs. The book will be of interest to students and researchers working on organic optoelectronics.

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

"Complete dependence on semiconductor vendors' application notes and data sheets is now a thing of the past thanks to this all-in-one comparison text on nonvolatile semiconductor memory (NVSM) technology. Working electronics engineers can now refer to this book to access the technical data and applications-focused perspective they need to make intelligent decisions regarding the selection, specification, procurement, and application of NVSM devices.
The most comprehensive book in the field, NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY gathers expertly-written information scattered throughout device literature in a single, well-balanced volume. This book features an in-depth overview accompanied by applications-oriented chapters on device reliability and endurance, radiation tolerance, as well as device physics and design. It is an essential reference for electronics engineers."
Sponsored by:
IEEE Components, Packaging, and Manufacturing Technology Society, IEEE Solid-State Circuits Council/Society.

Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.

This primer is a collection of notes based on lectures that were originally given at IIT Madras (India) and at IFT Madrid (Spain). It is a concise and pragmatic course on applied holography focusing on the basic analytic and numerical techniques involved. The presented lectures are not intended to provide all the fundamental theoretical background, which can be found in the available literature, but they concentrate on concrete applications of AdS/CFT to hydrodynamics, quantum chromodynamics and condensed matter. The idea is to accompany the reader step by step through the various benchmark examples with a classmate attitude, providing details for the computations and open-source numerical codes in Mathematica, and sharing simple tricks and warnings collected during the author's research experience. At the end of this path, the reader will be in possess of all the fundamental skills and tools to learn by him/herself more advanced techniques and to produce independent and novel research in the field.

Low-dimensional systems have revolutionized semiconductor physics and had a tremendous impact on technology. Using simple physical explanations, with reference to examples from actual devices, this book introduces the general principles essential to low-dimensional semiconductors. The author presents a formalism that describes low-dimensional semiconductor systems, studying two key systems in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties have multiple applications in lasers and other opto-electronic devices. The book will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of--and latest developments in--transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Semiconductor Gas Sensors, Second Edition, summarizes recent research on basic principles, new materials and emerging technologies in this essential field. Chapters cover the foundation of the underlying principles and sensing mechanisms of gas sensors, include expanded content on gas sensing characteristics, such as response, sensitivity and cross-sensitivity, present an overview of the nanomaterials utilized for gas sensing, and review the latest applications for semiconductor gas sensors, including environmental monitoring, indoor monitoring, medical applications, CMOS integration and chemical warfare agents. This second edition has been completely updated, thus ensuring it reflects current literature and the latest materials systems and applications.

This book highlights the origin of low external quantum efficiency for deep ultraviolet light-emitting diodes (DUV LEDs). In addition, it puts forward solutions for increasing the internal quantum efficiency and the light extraction efficiency of DUV LEDs. The book chiefly concentrates on approaches that can be used to improve the crystalline quality, increase carrier injection, reduce the polarization-induced electric field within multiple quantum wells, suppress the TM polarization emission, and enhance the light escape from the semiconductor layer. It also demonstrates insightful device physics for DUV LEDs, which will greatly benefit the optoelectronic community.

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.

This textbook lays out the fundamentals of electronic materials and devices on a level that is accessible to undergraduate engineering students with no prior coursework in electromagnetism and modern physics. The initial chapters present the basic concepts of waves and quantum mechanics, emphasizing the underlying physical concepts behind the properties of materials and the basic principles of device operation. Subsequent chapters focus on the fundamentals of electrons in materials, covering basic physical properties and conduction mechanisms in semiconductors and their use in diodes, transistors, and integrated circuits. The book also deals with a broader range of modern topics, including magnetic, spintronic, and superconducting materials and devices, optoelectronic and photonic devices, as well as the light emitting diode, solar cells, and various types of lasers. The last chapter presents a variety of materials with specific novel applications, such as dielectric materials used in electronics and photonics, liquid crystals, and organic conductors used in video displays, and superconducting devices for quantum computing. Clearly written with compelling illustrations and chapter-end problems, Rezende's Introduction to Electronic Materials and Devices is the ideal accompaniment to any undergraduate program in electrical and computer engineering. Adjacent students specializing in physics or materials science will also benefit from the timely and extensive discussion of the advanced devices, materials, and applications that round out this engaging and approachable textbook.

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

This book provides a methodological understanding of the theoretical and technical limitations to the longevity of Moore's law. The book presents research on factors that have significant impact on the future of Moore's law and those factors believed to sustain the trend of the last five decades. Research findings show that boundaries of Moore's law primarily include physical restrictions of scaling electronic components to levels beyond that of ordinary manufacturing principles and approaching the bounds of physics. The research presented in this book provides essential background and knowledge to grasp the following principles: Traditional and modern photolithography, the primary limiting factor of Moore's law Innovations in semiconductor manufacturing that makes current generation CMOS processing possible Multi-disciplinary technologies that could drive Moore's law forward significantly Design principles for microelectronic circuits and components that take advantage of technology miniaturization The semiconductor industry economic market trends and technical driving factors The complexity and cost associated with technology scaling have compelled researchers in the disciplines of engineering and physics to optimize previous generation nodes to improve system-on-chip performance. This is especially relevant to participate in the increased attractiveness of the Internet of Things (IoT). This book additionally provides scholarly and practical examples of principles in microelectronic circuit design and layout to mitigate technology limits of previous generation nodes. Readers are encouraged to intellectually apply the knowledge derived from this book to further research and innovation in prolonging Moore's law and associated principles.

Since the First International Symposium on Superconductivity (ISS '88) was held in Nagoya, Japan in 1988, significant advances have been achieved in a wide range of high temperature superconductivity research. Although the T c's of recently discovered oxide superconductors still do not exceed the record high value of 125K reported before that meeting, the enrichment in the variety of materials should prove useful to the investigation of the fundamental mechanism of superconductiv ity in these exotic materials. The discovery of the n-type superconducting oxides proved to oppose the previously held empirical fact that the charge carriers in all oxide superconductors were holes. In addition, optimization of the charge carrier density has been established as a technique to improve the superconducting proper ties of the previously known oxide materials. Many new experimental and theoreti cal advances have been made in understanding both the fundamental and the applied aspects of high temperature superconductivity. In this latter area, various new processing techniques have been investigated, and the critical current densities and other significant parameters of both bulk and thin film oxide superconductors are rapidly being improved. At this exciting stage of research in high temperature superconductivity, it is extremely important to provide an opportunity for researchers from industry, academia, government and other institutions around the world to freely exchange information and thus contribute to the further advancement of research."

The tools and techniques you need to break the analog design bottleneck!

Ten years ago, analog seemed to be a dead-end technology. Today, System-on-Chip (SoC) designs are increasingly mixed-signal designs. With the advent of application-specific integrated circuits (ASIC) technologies that can integrate both analog and digital functions on a single chip, analog has become more crucial than ever to the design process. Today, designers are moving beyond hand-crafted, one-transistor-at-a-time methods. They are using new circuit and physical synthesis tools to design practical analog circuits; new modeling and analysis tools to allow rapid exploration of system level alternatives; and new simulation tools to provide accurate answers for analog circuit behaviors and interactions that were considered impossible to handle only a few years ago.

To give circuit designers and CAD professionals a better understanding of the history and the current state of the art in the field, this volume collects in one place the essential set of analog CAD papers that form the foundation of today’s new analog design automation tools. Areas covered are:

• Analog synthesis
• Symbolic analysis
• Analog layout
• Analog modeling and analysis
• Specialized analog simulation
• Circuit centering and yield optimization
• Circuit testing

Computer-Aided Design of Analog Integrated Circuits and Systems is the cutting-edge reference that will be an invaluable resource for every semiconductor circuit designer and CAD professional who hopes to break the analog design bottleneck.

This is the simplest, quickest, least technical, most affordable introduction to basic electronics. No tools are necessary--not even a screwdriver. Easy Electronics should satisfy anyone who has felt frustrated by entry-level books that are not as clear and simple as they are supposed to be. Brilliantly clear graphics will take you step by step through 12 basic projects, none of which should take more than half an hour. Using alligator clips to connect components, you see and hear immediateresults. The hands-on approach is fun and intriguing, especially for family members exploring the projects together. The 12 experiments will introduce you to switches, resistors, capacitors, transistors, phototransistors, LEDs, audio transducers, and a silicon chip. You'll even learn how to read schematics by comparing them with the circuits that you build. No prior knowledge is required, and no math is involved. You learn by seeing, hearing, and touching. By the end of Experiment 12, you may be eager to move on to a more detailed book. Easy Electronics will function perfectly as a prequel to the same author's bestseller, Make: Electronics. All the components listed in the book are inexpensive and readily available from online sellers. A very affordable kit has been developed in conjunction with the book to eliminate the chore of shopping for separate parts. A QR code inside the book will take you to the vendor's web site. Concepts include: Transistor as a switch or an amplifier Phototransistor to function as an alarm Capacitor to store and release electricity Transducer to create sounds from a timer Resistor codes A miniature light bulb to display voltage The inner workings of a switch Using batteries and resistors in series and parallel Creating sounds by the pressure of your finger Making a matchbox that beeps when you touch it And more. Grab your copy and start experimenting!

The rapid growth of the use of optoelectronic technology in Information and Communications Technology (ICT) has seen a complementary increase in the performance of such technologies. As a result, optoelectronic technologies have replaced the technology of electronic interconnections. However, the control of manufacturing techniques for optoelectronic systems is more delicate than that of microelectronic technologies. This practical resource, divided into four chapters, examines several methods for determining the reliability of infrared LED devices. The primary interest of this book focuses on methods of extracting fundamental parameters from the electrical and optical characterization of specific zones in components. Failure mechanisms are identified based on measured performance before and after aging tests. Knowledge of failure mechanisms allows formulation of degradation laws, which in turn allow an accurate lifetime distribution for specific devices to be proposed.

This comprehensive text covers the basic physics of the solid state starting at an elementary level suitable for undergraduates but then advancing, in stages, to a graduate and advanced graduate level. In addition to treating the fundamental elastic, electrical, thermal, magnetic, structural, electronic, transport, optical, mechanical and compositional properties, we also discuss topics like superfluidity and superconductivity along with special topics such as strongly correlated systems, high-temperature superconductors, the quantum Hall effects, and graphene. Particular emphasis is given to so-called first principles calculations utilizing modern density functional theory which for many systems now allow accurate calculations of the electronic, magnetic, and thermal properties.

The purpose of this book is to provide an elementary yet systematic description of the Bogoliubov-de Gennes (BdG) equations, their unique symmetry properties and their relation to Green's function theory. Specifically, it introduces readers to the supercell technique for the solutions of the BdG equations, as well as other related techniques for more rapidly solving the equations in practical applications. The BdG equations are derived from a microscopic model Hamiltonian with an effective pairing interaction and fully capture the local electronic structure through self-consistent solutions via exact diagonalization. This approach has been successfully generalized to study many aspects of conventional and unconventional superconductors with inhomogeneities - including defects, disorder or the presence of a magnetic field - and becomes an even more attractive choice when the first-principles information of a typical superconductor is incorporated via the construction of a low-energy tight-binding model. Further, the lattice BdG approach is essential when theoretical results for local electronic states around such defects are compared with the scanning tunneling microscopy measurements. Altogether, these lectures provide a timely primer for graduate students and non-specialist researchers, while also offering a useful reference guide for experts in the field.