This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.

This book provides a comprehensive overview of the recent development of flexible electronics. This is a fast evolving research field and tremendous progress has been made in the past decade. In this book, new material development and novel flexible device, circuit design, fabrication and characterizations will be introduced. Particularly, recent progress of nanomaterials, including carbon nanotubes, graphene, semiconductor nanowires, nanofibers, for flexible electronic applications, assembly of nanomaterials for large scale device and circuitry, flexible energy devices, such as solar cells and batteries, etc, will be introduced. And through reviewing these cutting edge research, the readers will be able to see the key advantages and challenges of flexible electronics both from material and device perspectives, as well as identify future directions of the field.

This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD effective mass superlattices under magnetic quantization. An important concept of the measurement of the band gap in HD optoelectronic materials in the presence of external photo-excitation has been discussed in this perspective. The influences of magnetic quantization, crossed electric and quantizing fields, the intense electric field on the TPM in HD semiconductors and superlattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the various fields for which this particular series is dedicated.

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

The author of this unique volume, Lev P Gor'kov is internationally renowned for his seminal contribution in the fundamentals of the Theory of Superconductivity, Theory of Metals, the field of Quantum Statistical Physics, and more generally, Organic Metals and the like. Each reprints' group is preceded by the author's introductions and commentaries clarifying the formulation of a problem, summarizing the essence of the results and placing them in the context of recent developments. The author belongs to the last generation of scientists who were the direct disciples of the legendary Russian theorist Lev Landau. And Gor'kov's achievements reflect the unique style and the originality of this famous Scientific School. As with other Russian scientists of his generation, many of the pioneering papers by Lev Gor'kov have been published in the Russian journals that are hard-to-reach for modern readers, students and postdocs. Allowing readers a glimpse into the various ways that the field of condensed matter physics was evolving for more than half a century, the volume is a valuable source for historians of science.

This invaluable book provides a comprehensive treatment of design and applications of semiconductor optical amplifiers (SOA). SOA is an important component for optical communication systems. It has applications as in-line amplifiers and as functional devices in evolving optical networks. The functional applications of SOAs were first studied in the early 1990's, since then the diversity and scope of such applications have been steadily growing. This is the second edition of a book on Semiconductor Optical Amplifiers first published in 2006 by the same authors. Several chapters and sections representing new developments in the chapters of the first edition have been added. The new chapters cover quantum dot semiconductor optical amplifiers (QD-SOA), reflective semiconductor optical amplifiers (RSOA) for passive optical network applications, two-photon absorption in amplifiers, and, applications of SOA as broadband sources. They represent advances in research, technology and commercial trends in the area of semiconductor optical amplifiers.Semiconductor Optical Amplifier is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of optical amplifiers. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

This book consists of thirteen chapters each of them defining in depth the chapter subject and surveying recent developments in the field. The main objective of this book is to summarise the recent advances in material science of high-Tc superconductors, specify their properties, processing, and applications. New and challenging issues appear in this book, like superconducting nano wires, low cost RE-123, infiltration growth, processing of single domain porous Y-123, novel cold seeding method for the production of LRE-123 materials, flux pinning, magnetic shielding, and innovation in synthesis of MgB2. Further, it also covers large scale applications of bulk materials, HTS Maglev systems with bulk superconducting parts, development of superconducting permanent magnet system, pulsed field magnetisation and its application, and production and characterisation of HTS roebel cable.

The authors of this book present current research in the study of superconductivity. Topics discussed in this compilation include the effects of non-magnetic defects in hole doped cuprates; deep cryogenic refrigeration by photons based on the phonon deficit effect in superconductors; superconductivity driven by an anti-polar electric phase in high temperature superconducting materials; superconductive graphite intercalation compounds; a superconducting magnetic field concentrator with nanodimensional branches and slits; magnetic mechanisms of pairing in a strongly correlated electron system of copper oxides; two non-linear mechanisms of correlations between copper carriers in superconductivity and their microscopical descriptions; three dimensionality of the critical state and variational methods for magnetically anisotropic superconductors; theory of multi-band superconductivity; conserving approximation for the self-energy of the t-U-V-J model beyond the Hartree-Fock approximation; and superconductivity as a consequence of an ordering of zero-point oscillations in electron gas.

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. Cutting-Edge CMOS VLSI Design for Manufacturability TechniquesThis detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

This book presents topical research in the field of light-emitting diodes and the systems, uses and efficiency of optoelectronics. Topics discussed include fabricating high efficiency organic light-emitting diodes for flat panel displays and solid-state lighting; reliability estimation from the junction to the packaging of LED; next-generation intelligent and green energy LED backlighting 3D display; inorganic-organic hybrid emitting material fabricated by solvothermal synthesis; and, photonic bandgap defect structure based on IV-VI semiconductors.

This book presents and discusses research in the study of superconductivity. Topics discussed herein include applications of confined quantum field theory to condensed matter systems; thermodynamic properties of superconducting states; vortices in layered superconductors; superconductivity in highly correlated systems; combined effects of disorder and magnetic field in superconductors; and the critical currents and vortex dynamics in percolative superconductors.

The main focus of the book is to present the effects of nanostructuring on superconducting critical parameters. Optimizing systematically flux and condensate confinement in various nanostructured superconductors, ranging from single nano-cells to their huge arrays, critical fields and currents can be increased up to their theoretical limits, thus drastically improving the potential for practical applications of nanostructured superconductors.

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

It is well known that most important electronic devices use Schottky junctions and heterojunctions. Unfortunately there is not an advanced book introducing heterojunctions systematically. "Introduction to Organic Semiconductor Heterojunctions" fills the gap. In this book, the authors provide a comprehensive discussion and systematic introduction on the state-of-the-art technologies as well as application of organic semiconductor heterojunctions.

First book to systematically introduce organic heterojunctionsArms readers with theoretical, experimental and applied aspects of organic heterojunctionsThe Chinese edition of the book is part of the Chinese Academy of Sciences' Distinguished Young Scholar Scientific Book Series

"Introduction to Organic Semiconductor Heterojunctions" is an ideal and valued reference for researchers and graduate students focusing on organic thin film devices like organic light-emitting diodes (OLEDs), organic photovoltaic (OPV) cells, and organic field-effect transistors (OFETs). Instructors can use the book as a supplementary text for a semiconductor physics or organic electronics course, giving students a better feel for the application of organic thin film devices.

In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for the current conduction in single layer OTFDs including both injection and bulk effect for both trap free organics as well as organics with traps exponentially distributed in energy are developed. The dependencies of the current density on the operation voltage, the thickness of the organic layer and the trap properties are numerically studied.

Nanoscale materials are showing great promise in various optoelectronics applications, especially the fast-developing fields of optical communication and optical computers. With silicon as the leading material for microelectronics, the integration of optical functions into silicon technology is a very important challenge. This book concentrates on the optoelectronic properties of silicon nanocrystals, associated phenomena and related topics, from basic principles to the most recent discoveries. The areas of focus include silicon-based light-emitting devices, light modulators, optical wavevguides and interconnectors, optical amplifiers and memory elements. The book comprises theoretical and experimental analyses of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications.

The book is devoted to theoretical investigations of interrelations in between morphology, single-electron spectrum, and optical properties of polycrystalline and spatially non-homogeneous amorphous semiconductors.

Since first developed in the early sixties, silicon chip technology has made vast leaps forward. From a rudimentary circuit with a mere handful of transistors, the chip has evolved into a technological wonder, packing millions of bits of information on a surface no larger that a human thumbnail. And most experts predict that in the near future, we will see chips with over a billion bits. Quantum dots are small devices that contain a tiny droplet of free electrons. They are fabricated in semiconductor materials and have typical dimensions ranging from nanometres to a few microns. The size and shape of these structures and therefore the number of electrons they contain can be precisely controlled; a quantum dot can have anything from a single electron to a collection of several thousands. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. As in an atom, the energy levels in a quantum dot become quantised due to the confinement of electrons. Unlike atoms however, quantum dots can be easily connected to electrodes and are therefore excellent tools for studying atomic-like properties. This new book presents the latest research developments in the world.

The superconductivity of MgB2 has been hidden for nearly 50 years although it has the highest Tc among the intermetallics superconductors. Beside the high Tc, simple crystal structure, large coherence length, high critical field, transparency of grain boundaries to current flow and low normal state resistivity MgB2 is a fascinating topic to study for both large scale application and electronic devices. Moreover, the presence of two-gap superconductivity (d and o band) has been theoretically and experimentally established. However, critical current density of pristine MgB2 drops rapidly in the high magnetic field due to the weak pinning centres and low upper critical field. During the past three years, novel techniques and developments for fabrication of useable MgB2 have been reported, including chemical alloying, irradiation, thermo-mechanical processing techniques and magnetic shielding to improve the critical density, upper critical field and the irreversibility field. Among the studies, atomic substitution, especially using nano-particles, may help in clarification of the superconductivity mechanism thus making it appropriate for practical application. On the other hand, the momentum of enhancing flux pinning using chemical doping is moving to a positive side. Nano-SiC powder is well known for effective improvement of the critical current density. In this book, a brief introduction of superconductivity in MgB2 is introduced. Further, the basic electronic and magnetic properties of the MgB2 as well as its crystal structure are reviewed. The authors also discuss the preparation method that has been well developed for experimentation on MgB2. Along with that, they review the experimental results of the chemical alloying on MgB2, particularly on the critical current density. In addition, the future prospects of MgB2 and developments for applications in the current superconductivity market are given.

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.

This new book focuses on superconductivity which is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, worldwide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking.Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such 'strongly correlated' solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. This important book brings together leading research in this dynamic field.