Design, build, and test LED-based projects using the Raspberry Pi About This Book Implement real LED-based projects for Raspberry Pi Learn to interface various LED modules such as LEDs, 7-segment, 4-digits 7 segment, and dot matrix to Raspberry Pi Get hands-on experience by exploring real-time LEDs with this project-based book Who This Book Is For This book is for those who want to learn how to build Raspberry Pi projects utilising LEDs, 7 segment, 4-digits 7 segment, and dot matrix modules. You also will learn to implement those modules in real applications, including interfacing with wireless modules and the Android mobile app. However, you don't need to have any previous experience with the Raspberry Pi or Android platforms. What You Will Learn Control LEDs, 7 segments, and 4-digits 7 segment from a Raspberry Pi Expand Raspberry Pi's GPIO Build a countdown timer Build a digital clock display Display numbers and characters on dot matrix displays Build a traffic light controller Build a remote home light control with a Bluetooth low energy module and Android Build mobile Internet-controlled lamps with a wireless module and Android In Detail Blinking LED is a popular application when getting started in embedded development. By customizing and utilising LED-based modules into the Raspberry Pi board, exciting projects can be obtained. A countdown timer, a digital clock, a traffic light controller, and a remote light controller are a list of LED-based inspired project samples for Raspberry Pi. An LED is a simple actuator device that displays lighting and can be controlled easily from a Raspberry Pi. This book will provide you with the ability to control LEDs from Raspberry Pi, starting from describing an idea through designing and implementing several projects based on LEDs, such as, 7-segments, 4-digits 7 segment, and dot matrix displays. Beginning with step-by-step instructions on installation and configuration, this book can either be read from cover to cover or treated as an essential reference companion to your Raspberry Pi. Samples for the project application are provided such as a countdown timer, a digital clock, a traffic light controller, a remote light controller, and an LED-based Internet of Things, so you get more practice in the art of Raspberry Pi development. Raspberry Pi LED Blueprints is an essential reference guide full of practical solutions to help you build LED-based applications. Style and approach This book follows a step-by-step approach to LED-based development for Raspberry Pi, explained in a conversational and easy-to-follow style. Each topic is explained sequentially in the process of building an application, and detailed explanations of the basic and advanced features are included.

This is an overview of different models and mechanisms developed to describe the capture and relaxation of carriers in quantum-dot systems. Despite their undisputed importance, the mechanisms leading to population and energy exchanges between a quantum dot and its environment are not yet fully understood. The authors develop a first-order approach to such effects, using elementary quantum mechanics and an introduction to the physics of semiconductors. The book results from a series of lectures given by the authors at the Master's level.

Students and researchers looking for a comprehensive textbook on magnetism, magnetic materials and related applications will find in this book an excellent explanation of the field. Chapters progress logically from the physics of magnetism, to magnetic phenomena in materials, to size and dimensionality effects, to applications. Beginning with a description of magnetic phenomena and measurements on a macroscopic scale, the book then presents discussions of intrinsic and phenomenological concepts of magnetism such as electronic magnetic moments and classical, quantum, and band theories of magnetic behavior. It then covers ordered magnetic materials (emphasizing their structure-sensitive properties) and magnetic phenomena, including magnetic anisotropy, magnetostriction, and magnetic domain structures and dynamics. What follows is a comprehensive description of imaging methods to resolve magnetic microstructures (domains) along with an introduction to micromagnetic modeling. The book then explores in detail size (small particles) and dimensionality (surface and interfaces) effects - the underpinnings of nanoscience and nanotechnology that are brought into sharp focus by magnetism. The hallmark of modern science is its interdisciplinarity, and the second half of the book offers interdisciplinary discussions of information technology, magnetoelectronics and the future of biomedicine via recent developments in magnetism. Modern materials with tailored properties require careful synthetic and characterization strategies. The book also includes relevant details of the chemical synthesis of small particles and the physical deposition of ultra thin films. In addition, the book presents details of state-of-the-art characterization methods and summaries of representative families of materials, including tables of properties. CGS equivalents (to SI) are included.

Since the 1980s, a general theme in the study of high-temperature superconductors has been to test the BCS theory and its predictions against new data. At the same time, this process has engendered new physics, new materials, and new theoretical frameworks. Remarkable advances have occurred in sample quality and in single crystals, in hole and electron doping in the development of sister compounds with lower transition temperatures, and in instruments to probe structure and dynamics. Handbook of High-Temperature Superconductvity is a comprehensive and in-depth treatment of both experimental and theoretical methodologies by the the world's top leaders in the field. The Editor, Nobel Laureate J. Robert Schrieffer, and Associate Editor James S. Brooks, have produced a unified, coherent work providing a global view of high-temperature superconductivity covering the materials, the relationships with heavy-fermion and organic systems, and the many formidable challenges that remain.

Starting in the 1950s, US physicists dominated the search for elementary particles; aided by the association of this research with national security, they held this position for decades. In an effort to maintain their hegemony and track down the elusive Higgs boson, they convinced President Reagan and Congress to support construction of the multibillion-dollar Superconducting Super Collider project in Texas--the largest basic-science project ever attempted. But after the Cold War ended and the estimated SSC cost surpassed ten billion dollars, Congress terminated the project in October 1993. Drawing on extensive archival research, contemporaneous press accounts, and over one hundred interviews with scientists, engineers, government officials, and others involved, Tunnel Visions tells the riveting story of the aborted SSC project. The authors examine the complex, interrelated causes for its demise, including problems of large-project management, continuing cost overruns, and lack of foreign contributions. In doing so, they ask whether Big Science has become too large and expensive, including whether academic scientists and their government overseers can effectively manage such an enormous undertaking.

The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. * International group of contributors * Presents basic physical concepts developed in this field in recent years in a uniform manner * Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials

THE MOST ADVANCED SEMICONDUCTOR MISMATCH TECHNIQUES

These mismatch methods are the most advanced techniques in the Semiconductor field. All the practical matters of simulation, measurement, and mismatch model parameter generation (using random field theory) including multi-device co-correlation are handled in an accurate, practical, and comprehensive manner. This represents a true advance and technical progress in the matter of semiconductor mismatch simulation and measurement. If you're involved in any way with mismatch of semiconductor devices you've got to get this book. If not for yourself then for the modelers that create your semiconductor models for you.

TABLE OF CONTENTS SUMMARY

PART I. DEVICE MISMATCH SIMULATION OVERVIEW How To Perform Monte-Carlo And Mismatch Simulation Parameters and Statistics Model Files Process & Mismatch Variation Mismatch vs Area Mismatch vs Distance and Other Effects (Mismatch Factor) Effective Mismatch Factor

PART II. MISMATCH MEASUREMENT TECHNIQUES Resistors, Diodes, Mosfets, Bipolar Transistors, JFETs Monte-Carlo Analysis of Correlated Variables Differential Mismatch Measurement Features: Far superior accuracy compared to past traditional methods. Differential method: Both devices are biased simultaneously, greatly reducing common mode noise and device thermal difference errors. Differential method avoids the errors of subtracting two large error prone, poor resolution measurements. Swapping of internal differential precision range resistors cancels internal instrumentation system errors resulting in even greater accuracy.

PART III. APPLYING RANDOM FIELD THEORY TO MISMATCH Random Field Theory ("Space" Series in More Than 1 Dimension) Random Field Correlation Function In 2 Dimensions (Our Semiconductor Case) How To Deal With Parametric Trends (Wafer Gradients) Simulating Correlated Devices In Two Dimensions (Using the Multivariate Normal Conditional Probability Density)

The purpose of this book is to illustrate the magnificence of the fabless semiconductor ecosystem, and to give credit where credit is due. We trace the history of the semiconductor industry from both a technical and business perspective. We argue that the development of the fabless business model was a key enabler of the growth in semiconductors since the mid-1980s. Because business models, as much as the technology, are what keep us thrilled with new gadgets year after year, we focus on the evolution of the electronics business. We also invited key players in the industry to contribute chapters. These "In Their Own Words" chapters allow the heavyweights of the industry to tell their corporate history for themselves, focusing on the industry developments (both in technology and business models) that made them successful, and how they in turn drive the further evolution of the semiconductor industry.

This book systematically examines the results of an investigation of electronic and molecular processes on the surface of semiconductors, taking place at their interaction with particles of a gas environment or in the course of superficial alloying by atoms of metals. The main subject of the book is the analysis of interaction of semiconductors with foreign atoms and molecules from a gas environment and from beams of elements, bombarding a surface. This book consists of five chapters, including 13 tables, 122 figures and bibliography based on over 500 sources, including author's publications and data originally never published in English before. The book acquaints the reader with basic concepts and positions, used at the description of interaction of semiconductor surface with foreign atoms and molecules. Demonstration of opportunities arising from the usage of local and collective approaches to the analysis of electronic and molecular processes on a surface is useful though insufficient in determining the sensitivity for adsorption of a semiconductors' surface.

Students and researchers looking for a comprehensive textbook on magnetism, magnetic materials and related applications will find in this book an excellent explanation of the field. Chapters progress logically from the physics of magnetism, to magnetic phenomena in materials, to size and dimensionality effects, to applications. Beginning with a description of magnetic phenomena and measurements on a macroscopic scale, the book then presents discussions of intrinsic and phenomenological concepts of magnetism such as electronic magnetic moments and classical, quantum, and band theories of magnetic behavior. It then covers ordered magnetic materials (emphasizing their structure-sensitive properties) and magnetic phenomena, including magnetic anisotropy, magnetostriction, and magnetic domain structures and dynamics. What follows is a comprehensive description of imaging methods to resolve magnetic microstructures (domains) along with an introduction to micromagnetic modeling. The book then explores in detail size (small particles) and dimensionality (surface and interfaces) effects - the underpinnings of nanoscience and nanotechnology that are brought into sharp focus by magnetism. The hallmark of modern science is its interdisciplinarity, and the second half of the book offers interdisciplinary discussions of information technology, magnetoelectronics and the future of biomedicine via recent developments in magnetism. Modern materials with tailored properties require careful synthetic and characterization strategies. The book also includes relevant details of the chemical synthesis of small particles and the physical deposition of ultra thin films. In addition, the book presents details of state-of-the-art characterization methods and summaries of representative families of materials, including tables of properties. CGS equivalents (to SI) are included.

This comprehensive monograph summarises the 30-year studies of borophosphosilicate glass (BPSG) thin film used in electronic technologies, including the authors personal experience with the film deposition, characterisation, and implementation in microelectronic technology. The main core of the monograph is the interrelation of chemical vapour deposition (CVD) kinetic features, thin film material properties, and electronic device technology aspects. Part one of the monograph is devoted to the analysis of thin film synthesis, such as: CVD methodology and BPSG film processes, silicon dioxide and glass film growth kinetics, CVD step coverage and gap-fill features. Part two of the book is a description of BPSG film properties, film structure, glass flow capability, BPSG film-moisture interaction and the film defect formation phenomenon. A number of experimental data are presented and discussed in detail.

This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style that graduate students will find very attractive. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology. One of the problems encountered in high-power transistors is the excessive production of phonons and the first new chapter examines the hot-phonon phenomenon and the lifetime of polar optical phonons in the nitrides. In the burgeoning field of spintronics a crucial parameter is the lifetime of a spin-polarised electron gas, and this is treated in detail in the second of the new chapters. The third new chapter moves from the treatment of bulk properties to the unavoidable effects of the spatial limitation of the semiconductor, and to the influence of surface states and the pinning of the Fermi level. As with previous editions the text restricts its attention to bulk semiconductors. The account progresses from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities. Besides being a useful reference for workers in the field, this book will be a valuable text for graduate courses.

This book consists of thirteen chapters each of them defining in depth the chapter subject and surveying recent developments in the field. The main objective of this book is to summarise the recent advances in material science of high-Tc superconductors, specify their properties, processing, and applications. New and challenging issues appear in this book, like superconducting nano wires, low cost RE-123, infiltration growth, processing of single domain porous Y-123, novel cold seeding method for the production of LRE-123 materials, flux pinning, magnetic shielding, and innovation in synthesis of MgB2. Further, it also covers large scale applications of bulk materials, HTS Maglev systems with bulk superconducting parts, development of superconducting permanent magnet system, pulsed field magnetisation and its application, and production and characterisation of HTS roebel cable.

Transconductance Thermal Noise Model For MOSFETs

Accurate expressions for MOSFET channel thermal noise in terms of transconductances are derived for long channel MOSFETs in both the strong and weak inversion regions. The transconductance form also allows us to formulate a thermal noise model which includes moderate inversion.

Part of the transconductance expressions being presented here, namely (8kT/3)(gm+gmbs+gds), have been in use before in SPICE simulators but (to our knowledge) its derivation has never been rigorously derived from the first principles of MOSFET theory. This derivation and others will be presented.

It will also be shown that the general form of the transconductance thermal noise model for long channels, derived for both the saturated and non-saturated (triode) regions, are accurate and equivalent to the inversion charge thermal noise model.

Finally, the thermal noise expression derived for long channel MOSFETs will be extended to cover the short channel case by treating velocity saturation. The excess thermal noise factor due to the higher electric fields in short channels is also included.

The various devices (transistors, resistors, etc.) in an integrated semiconductor circuit have very highly coupled or correlated parametric inter-relationships. Adding to the complexity, are changes in the parametric values as the sizes and spacings between the devices change. This coupling is not in the form of interaction fields or forces but rather takes place through the correlation of parameters between different devices. These parametric correlations occur because of the processing of the semiconductor wafers through its manufacturing stages.

The devices on each wafer have many n-type or p-type doped semiconductor layers in common because of being processed at the same temperature, or in the same gaseous environments, or in the same implantation sessions. In addition, each doped layer has variations over its different regions. All this results in very complex parametric interrelationships between the various devices within the integrated circuit. In turn these have very influential effects on the variation of key circuit characteristics.

In spite of the tremendous importance of knowing and predicting these relationships, accurate methods of predicting these complex relationships between devices have evaded the semiconductor industry. The current methods used, such as statistically independent Monte Carlo simulation and Corner Models, either severely underestimate or severely overestimate the variation of key integrated circuit characteristics of interest. Either way, the current methods are very inaccurate. In order to meet this challenge, the methods covered in this dissertation have been developed and applied to the case at hand. They are based on applications of probability, statistics, stochastic, and random field theory, and various computer algorithms.

Many of the concepts developed here can be applied to other complex correlated systems not necessarily involving semiconductors.

Clearly structured, the introductory part of this first book on ALD provides a great insight into all aspects of the technique, while the second part focuses on nanomaterials and fields of application. As a result, readers and users are led from the fundamental processes and uses of the technique to building nanostructures in various important fields of academic and industrial significance.

Amorphous chalcogenide semiconductors have commercial value and have many uses such as image formation, including x-rays, and high-definition TV pick up tubes. They have widespread application in the microelectronics industry and amorphous metallic alloys also have useful magnetic properties. This book focuses on their imaging applications and related properties. It examines the two groups of amorphous semiconductors that are of most commercial interest: the chalcogenide glasses the tetrahedrally bonded amorphous solids such as amorphous silicon, germanium and related alloys Both of these groups may be conveniently prepared in the form of thin/thick films which is of considerable importance in applications where large-area coverage of flat or curved surfaces of rigid or flexible materials is desirable such as in photovoltaic arrays, X-Ray sensors, display screens and photocopier drums.

One of the goals of the actual semiconductor detector research is to find and develop other materials which overcome the limits of the present semiconductors. In this respect the so-called wide-band gap semiconductors, among which silicon carbide is one of the most promising examples, are the best candidates. Their advantages with respect to traditional semiconductors, namely silicon and germanium, are discussed. This book examines certain aspects of the interaction of radiation with semiconductors, as well as the basic properties of semiconductor detectors.

Chapter titles are ...(1) Introduction ...(2) Analysis and Design of 2-D Planar Transmission Lines and Circuits [subsections include Finite Element Analysis Method and Spectral Domain Approach] ...(3) Analysis of 3-D Electronic Packaging Circuits ...(4) Analytical Asymptotic Extraction Techniques for Multi-Layer Transmission Lines and Planar Circuits ...(5) Analysis of Antennas [subsections include Dielectric-Loaded Aperture Antennas and Ferrite-Loaded Antennas - with applications to Radar] ...(6) References.

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.

In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for the current conduction in single layer OTFDs including both injection and bulk effect for both trap free organics as well as organics with traps exponentially distributed in energy are developed. The dependencies of the current density on the operation voltage, the thickness of the organic layer and the trap properties are numerically studied.

The book is devoted to theoretical investigations of interrelations in between morphology, single-electron spectrum, and optical properties of polycrystalline and spatially non-homogeneous amorphous semiconductors.