Superconductors capture the imagination with seemingly magical properties that allow them to carry electricity without losing any energy at all. They are however, extraordinarily difficult materials to work with. In this book, Susannah Speller explores the astonishing variety of superconducting materials and the rich science behind optimising their performance for use in different applications. Readers will discover how diverse superconducting materials and their applications are, from the metallic alloys used in the Large Hadron Collider to the thin film superconductors that will be crucial for quantum computers. This book tells about how even the simplest superconductors have to be carefully designed and engineered on the nanometre scale. Along the way, the reader will be introduced to what materials science is all about and why advanced materials have such widespread importance for technological progress. With 'Wider View' and 'Under the Lens' sections, Speller provides an accessible and illuminating exploration of superconductors and their place in the modern world.

This comprehensive volume provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications such as high-k/metal gate cleaning, copper/low-k cleaning, high dose implant stripping, and silicon and SiGe passivation. The theory and fundamental physics associated with wet etching and wet cleaning is reviewed, plus the surface and colloidal aspects of wet processing. Formulation development practices and methodology are presented along with the applications for preventing copper corrosion, cleaning aluminum lines, and other sensitive layers. This is a must-have reference for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing.

From the Reviews...

"This handbook will be a valuable resource for many academic libraries. Many engineering librarians who work with a variety of programs (including, but not limited to Materials Engineering) should include this work in their collection. My recommendation is to add this work to any collection that serves a campus with a materials/manufacturing/electrical/computer engineering programs and campuses with departments of physics and/or chemistry with large graduate-level enrollment."
--Randy Wallace, Department Head, Discovery Park Library, University of North Texas

Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.

This book deals with existing technologies of solar energy conversion as well as novel methods under consideration in academic and commercial R&D sites. The experimental results presented in the work are well crafted by both analytical and first-principle numerical simulations. The book highlights the real potential for economically justified use of solar energy at every household and/or commercial solar farms. The ever-improving methods of thin-film epitaxial growth combined with a better understanding of the sun light absorption and antireflection are highlighted. While there was a period when the material quality was considered to be cornerstone of the conversion efficiency followed by substantial efforts to optimize multiple-cell architecture, it became clear that many old ideas such as variable band gap, multi-junction intrinsic region, as well as solar tracking mechanisms offer new possibilities for improved harvesting of energy. Amplifying the importance of materials selection efficient design of the photo-voltaic elements various aspects of the production cost and the impact on the environment are discussed. In addition, the eligibility of the proposed production technologies in the current photovoltaic market are evaluated and confirmed.

Das Buch beschreibt die Konzepte siliziumbasierter MOS-Bauelemente f r Logikanwendungen (CMOS), Speicheranwendungen (DRAM, SRAM, EEPROM) und leistungselektronische Anwendungen. Der Autor untersucht die Quellen, die in den vergangenen 30 Jahren diskutiert wurden. Er beschreibt, wie die einzelnen Konzepte technologisch umgesetzt wurden und geht auf die Vor- und Nachteile der Konzepte ein. Er erl utert die Funktionsweise und Charakteristiken der elektronischen Bauelemente, die mit dem jeweiligen Konzept realisiert wurden.

Das Buch ist besonders geeignet f r Ingenieure und Physiker, die sich mit neuartigen bzw. alternativen Bauelementarchitekturen und deren Entwicklung besch ftigen.

This book describes the physical mechanism of high-frequency (radio-frequency) capacitive discharge (RFCD) of low and medium pressure and the properties of discharge plasma in detail. The main properties and characteristics of RFCD, the features of electric breakdown in a high-frequency field are also investigated. The properties of near-electrode layers of a spatial discharge, the nature of the electric field in them, and the processes of charge transport to electrodes are explored. The work is intended for scientists engaged in gas discharge physics and low-temperature plasmas, graduate students and students of physics, physical chemistry, and relevant specialties.

Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications * Based on timely published and unpublished work written by expert authors * Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses * Describes the physical effects (quantum, tunneling) of MOS devices * Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment * Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book MOS Devices for Low-Voltage and Low-Energy Applications explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." Prof. Joao A. Martino, University of Sao Paulo, Brazil

In this text, specialists in silicon-on-insulator technology from both East and West meet, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterization, device and circuit issues.

This concise volume provides an introduction to the working principles, design, and construction of air-stable inverted organic light-emitting diodes (OLEDs), which lead to the realization of practical flexible electronics. The first part of the book reviews the history of the three generations of inverted OLEDs: hybrid organic inorganic light-emitting diodes (HOILEDs), metal oxides and organic electron injection layer, describing the materials, fabrication techniques, device structure, applications, and technological challenges involved in each case. The second part of the book focuses on the carrier injection mechanism in OLEDs. The book will be of interest to students and researchers working on organic optoelectronics.

A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or more components. Featuring detailed figures and extensive references, this book: Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases Summarizes the data from the last 15-20 years of literature on the study of organometallic compounds, which include zinc, cadmium, or mercury and sulfur, selenium, or tellurium Classifies all materials according to the periodic table groups of their constituent atoms, that is, possible combinations of Zn, Cd, and Hg with chalcogens S, Se, and Te and additional components in the order of their group number Specifies the diagram type, possible phase transformations and physical-chemical interaction of the components, methods of equilibrium investigation, thermodynamic characteristics, and methods for sample preparation in each multinary database description Multinary Alloys Based on II-VI Semiconductors contains valuable material useful for obtaining nanoscale II-VI semiconductors and for preparing thin films of these semiconductor materials, as well as for exploring the biological and medicinal applications of organometallic compounds, and for identifying new compounds with necessary properties.

Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book" "introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips.

The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology.

Look inside for extensive coverage on: The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-electronics to nano-technology Semiconductor manufacturing handling and auditing processing to avoid ESD failures ESD, EOS, EMI, EMC, and latchup semiconductor component and system level testing to demonstrate product resilience from human body model (HBM), transmission line pulse (TLP), charged device model (CDM), human metal model (HMM), cable discharge events (CDE), to system level IEC 61000-4-2 testsESD on-chip design and process manufacturing practices and solutions to improve ESD semiconductor chip solutions, also practical off-chip ESD protection and system level solutions to provide more robust systemsSystem level concerns in servers, laptops, disk drives, cell phones, digital cameras, hand held devices, automobiles, and space applicationsExamples of ESD design for state-of-the-art technologies, including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, magnetic recording technology, micro-machines (MEMs) to nano-structures

"ESD Basics: From Semiconductor Manufacturing to Product Use" complements the author's series of books on ESD protection. For those new to the field, it is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic Era.

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.

Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Fault analysis of highly-integrated semiconductor circuits has become an indispensable discipline in the optimization of product quality. Integrated Circuit Failure Analysis describes state-of-the-art procedures for exposing suspected failure sites in semiconductor devices. The author adopts a hands-on problem-oriented approach, founded on many years of practical experience, complemented by the explanation of basic theoretical principles. Features include: Advanced methods in device preparation and technical procedures for package inspection and semiconductor reliability. • Illustration of chip isolation and step-by-step delayering of chips by wet chemical and modern plasma dry etching techniques. • Particular analysis of bipolar and MOS circuits, although techniques are equally relevant to other semiconductors. • Advice on the choice of suitable laboratory equipment. • Numerous photographs and drawings providing guidance for checking results. Focusing on modern techniques, this practical text will enable both academic and industrial researchers and IC designers to expand the range of analytical and preparative methods at their disposal and to adapt to the needs of new technologies.

This is the simplest, quickest, least technical, most affordable introduction to basic electronics. No tools are necessary--not even a screwdriver. Easy Electronics should satisfy anyone who has felt frustrated by entry-level books that are not as clear and simple as they are supposed to be. Brilliantly clear graphics will take you step by step through 12 basic projects, none of which should take more than half an hour. Using alligator clips to connect components, you see and hear immediateresults. The hands-on approach is fun and intriguing, especially for family members exploring the projects together. The 12 experiments will introduce you to switches, resistors, capacitors, transistors, phototransistors, LEDs, audio transducers, and a silicon chip. You'll even learn how to read schematics by comparing them with the circuits that you build. No prior knowledge is required, and no math is involved. You learn by seeing, hearing, and touching. By the end of Experiment 12, you may be eager to move on to a more detailed book. Easy Electronics will function perfectly as a prequel to the same author's bestseller, Make: Electronics. All the components listed in the book are inexpensive and readily available from online sellers. A very affordable kit has been developed in conjunction with the book to eliminate the chore of shopping for separate parts. A QR code inside the book will take you to the vendor's web site. Concepts include: Transistor as a switch or an amplifier Phototransistor to function as an alarm Capacitor to store and release electricity Transducer to create sounds from a timer Resistor codes A miniature light bulb to display voltage The inner workings of a switch Using batteries and resistors in series and parallel Creating sounds by the pressure of your finger Making a matchbox that beeps when you touch it And more. Grab your copy and start experimenting!

The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics.
Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.

The book is an introduction to the science and possible applications of Graphene, the first one-atom-thick crystalline form of matter. Discovered in 2004 by now Nobelists Geim and Novoselov, the single layer of graphite, a hexagonal network of carbon atoms, has astonishing electrical and mechanical properties. It supports the highest electrical current density of any material, far exceeding metals copper and silver. Its absolute minimum thickness, 0.34 nanometers, provides an inherent advantage in possible forms of digital electronics past the era of Moore's Law. The book describes the unusual physics of the material, that it offers linear rather than parabolic energy bands. The Dirac-like electron energy bands lead to high constant carrier speed, similar to light photons. The lattice symmetry further implies a two-component wave-function, which has a practical effect of cancelling direct backscattering of carriers. The resulting high carrier mobility allows observation of the Quantum Hall Effect at room temperature, unique to Graphene. The material is two-dimensional, but in sizes micrometers nearly to meters displays great tensile strength but vanishing resistance to bending. The book reviews theoretical predictions of excessive atomic vibrational motion, tied to the dimensionality. As explained, these predictions seem not of practical consequence, and such effects are unobservable in samples up to nearly one meter size. The disintegration temperature of this refractory material is estimated as 4900K, certainly higher than the measured sublimation temperature of graphite, 3900K. As explained, applications of Graphene come in classes that range from additives to composite materials to field effect transistor elements capable of extremely high frequency operation. The classes of applications correlate with differing methods of fabrication, from inexpensive chemical exfoliations of graphite, to chemical vapour deposition on catalytic substrates as Cu and Ni, at temperatures around 1300K. The book reviews potential applications within existing electronics, to include interconnect wires, flash-memory elements, and high frequency field effect transistors. The chance to supplant the dominant CMOS family of silicon logic devices is assessed.

Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or more components. Featuring detailed figures and extensive references, this book: Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases Summarizes the data from the last 15-20 years of literature on the study of organometallic compounds, which include zinc, cadmium, or mercury and sulfur, selenium, or tellurium Classifies all materials according to the periodic table groups of their constituent atoms, that is, possible combinations of Zn, Cd, and Hg with chalcogens S, Se, and Te and additional components in the order of their group number Specifies the diagram type, possible phase transformations and physical-chemical interaction of the components, methods of equilibrium investigation, thermodynamic characteristics, and methods for sample preparation in each multinary database description Multinary Alloys Based on II-VI Semiconductors contains valuable material useful for obtaining nanoscale II-VI semiconductors and for preparing thin films of these semiconductor materials, as well as for exploring the biological and medicinal applications of organometallic compounds, and for identifying new compounds with necessary properties.

The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early ahome-madea variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called alow-dimensional structuresa (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

Superconductors is neither about basic aspects of superconductivity nor about its applications, but its mainstay is superconducting materials. Unusual and unconventional features of a large variety of novel superconductors are presented and their technological potential as practical superconductors assessed. The book begins with an introduction to basic aspects of superconductivity. The presentation is readily accessible to readers from a diverse range of scientific and technical disciplines, such as metallurgy, materials science, materials engineering, electronic and device engineering, and chemistry. The derivation of mathematical formulas and equations has been kept to a minimum and, wherever necessary, short appendices with essential mathematics have been added at the end of the text. The book is not meant to serve as an encyclopaedia, describing each and every superconductor that exists, but focuses on important milestones in their exciting development.