This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Joseph F. White has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications. He is thoroughly grounded in the physics and math ematics of the field, but has primarily the engineer's viewpoint, combining basic knowledge with experience and ingenuity to gen erate practical designs under constraints of required performance and costs of development and production. As a result of his teach ing experience and numerous technical papers and oral presenta tions, he has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook. Dr. White believes that an engineer must have a good understand ing of semiconductor physics, a thorough knowledge of microwave circuit theory, at least an elementary acquaintance with transistor drivers, and the ability to check and refine a microwave circuit on a computer terminal to be qualified for modern, creative design of microwave semiconductor control components. These subjects are well covered in approximately the first half of the book; the second half treats the general and specific design of switches, at tenuators, limiters, duplexers, and phase shifters, with many ex amples drawn from his experience and that of others."

IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

The study of cooperative phenomena is one of the dominant features of contem porary physics. Outside physics it has grown to a huge field of interdisciplinary investigation, involving all the natural sciences from physics via biology to socio logy. Yet, during the first few decades following the advent of quantum theory, the pursuit of the single particle or the single atom, as the case may be, has been so fascinating that only a small number of physicists have stressed the importance of collective behaviour. One outstanding personality among these few is Professor HERBERT FROHLICH. He has made an enormous contribution to the modern concept of cooperativity and has stimulated a whole generation of physicists. Therefore, it seemed to the editors very appropriate to dedicate a volume on "cooperative phenomena" to him on the occasion of his official retirement from his university duties. Nevertheless, in the course of carrying out this project, the editors have been somewhat amazed to find that they have covered the essentials of contemporary physics and its im pact on other scientific disciplines. It thus becomes clear how much HERBERT FROHLICH has inspired research workers and has acted as a stimulating discussion partner for others. FROHLICH is one of those exceptional scientists who have wor ked in quite different fields and given them an enormous impetus. Unfortunately, the number of scientists of such distinctive personality has been decreasing in our century."

Electronic Properties of Fullerenes and other Novel Materials gives an overview of the state-of-the-art research. It presents most recent results on preparation, experimental analysis by electron spectroscopy, infrared and Raman spectroscopy, luminescence, and nonlinear optical, as well as possible technological applications. Emphasis is also placed on the superconducting properties of Fullerenes. The introductory and advanced contributions provide a good survey of the current status of this rapidly developing field.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials, andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables, space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junction

Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers.

The occurrence of superconductivity among the d- and f-band metals remains one of the unsolved problems of physics. The first Rochester conference on this subject in October 1971 brought together approximately 100 experimentalists and theorists, and that conference was considered successful; the published proceedings well-represented the current research at that time and has served as a "handbook" to many. In the four and one half years since the first conference, impressive progress has been made in many areas (although Berndt Matthias would be one of the first to point out that raising the m"aximum transition temperature by a significant amount was not one of them). For a variety of reasons, I decided that it was time for a Second Rochester Conference on Superconductivity in d- and f-Band Metals and it was held on April 30 and May 1, 1976. It would appear that this conference was even more successful judging from the quality of the talks and various comments made to me. I believe that this was due to the fact that the subject matter is exciting and that the timing was particularly appropriate for several areas of research that were discussed. However, I cannot rule out other factors such as the one advanced humorously by J.

Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been discovered and developed, and our knowledge of the physical and other properties of oxide superconductors has deepened through extensive and intensive research. This knowledge has advanced superconductivity science and technology from the initial questioning stage to a more developed but still uncertain second stage where research activity in superconductivity now overlaps with fields of application. Generally speaking, science resonates with technology. Science not only complements but also competes with or stimulates technology. New scientific knowledge has triggered the second technological research stage. Much progress has been made in the development of practical devices, encouraging the application of superconductors in areas such as human levitation, a high speed levitated bearing, large current transforming leads, and high frequency devices. This technological progress has increased our understanding of the science involved, such as flux pinning and dynamics, and anomalous long-range superconducting interactions. At this important stage, international cooperation and collaborative projects can effectively sustain aggressive research and development in order to advance superconductivity to the next stages. The ISS Symposium is expected to serve as a venue for increasing our knowledge of superconductivity and for exchanging visions for future research and applications, through the presentation and discus of the latest research results. These proceedings also aim to summarize sion annual progress in high-Tc superconductivity in all fields."

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

I am indeed pleased to prepare this brief foreword for this book, written by several of my friends and colleagues in the Soviet Union. The book was first published in the Russian language in Moscow in 1975. The phenomenon of superconductivity was discovered in 1911 and promised to be important to the production of electromagnets since superconductors would not dissipate Joule heat. Unfortunate ly the first materials which were discovered to be superconducting reverted to the normal resistive state in magnetic fields of a few tesla. Thus the development that was hoped for by hundredths of a the early pioneers was destined to be delayed for over half a century. In 1961 the intermetallic compound NbaSn was found to be superconducting in a field of about 200 teslas. This breakthrough marked a turning point, and 50 years after the discovery of superconductivity an intensive period of technological development began. There are many applications of superconductivity that are now being pursued, but perhaps one of the most important is super conducting magnetic systems. There was a general feeling in the early 1960s that the intermetallic compounds and alloys that were found to retain superconductivity in the presence of high magnetic fields would make the commercialization of superconducting magnets a relatively simple matter. However, the next few years were ones of disillusionment; large magnets were found to be unstable, causing them to revert to the normal state at much lower magnetic fields than predicted."

Inelastic Electron Tunneling Spectroscop or lETS, provides a unique technique for electronically monitoring the vibrational modes of molecul (;5 adsorbed on a metal oxide surface. Since the discovery of the phenomena by JAKLEVIC and LM1BE in 1966, lETS has been developed by a number of scientists as a method for studying the surface chemistry of molecular species adsorbed on aluminum oxide. Recent applications of lETS include investigations of physical and chemical adsorption of hydrocarbons, studies of catalysis by metal particles, detection and identification of trace substances in air and water, and studies of biological molecules and electron damage to such molecules. lETS has been employed to investigate adhesive materials, and studies are currently in prog ress to investigate corrosion species and corrosion inhibitors on aluminum and its alloys. Electronic transitions of molecules have also been studied by lETS. The recent development of the "external doping" technique, whereby molecu lar species can be introduced into fabricated tunnel junctions, opens the door for a vast new array of surface chemical studies by lETS. lETS is rap idly becoming an important tool for the study of surface and interface phe nomena. In addition to its role in surface studies, inelastic tunneling has proved extremely valuable for the study of the electronic properties of thin metallic films, and the recent discovery of light emission from inelastic tunneling promises to be of some importance in the area of device physics."

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers."

Quasicrystals are a new form of the solid state which differ from the other two known forms, crystalline and amorphous, by possesing a new type of long-range translational order, called quasiperiodicty, and a noncrystallographic orientational order. This book provides an up-to-date description of the unusual physical properties of these new materials. Emphasis is placed on the experimental results, which are compared with those of the corresponding crystalline and amorphous systems and discussed in terms of modern theoretical models. Written by leading authorities in the field, the book will be of great use both to experienced workers in the field and to uninitiated graduate students.

The Novel Mechanisms of Superconductivity Conference was initially conceived in the early part of 1986 as a small, 2-1/2 day workshop of 40-70 scientists, both theorists and experimentalists interested in exploring the possible evidence for exotic, non phononic superconductivity. Of course, the historic discoveries of high temperature oxide superconductors by Bednorz and Mftller and the subsequent enhancements by the Houston/Alabama groups made such a small conference impractical. The conference necessarily had to expand, 2-1/2 days became 4-1/2 days and superconductivity in the high Tc oxides became the largest single topic in the workshop. In fact, this conference became the first major conference on this topic and thus, these proceedings are also the first maj or publication. However, heavy fermion, organic and low carrier concentration superconductors remained a very important part of this workshop and articles by the leaders in these fields are included in these proceedings. Ultimately the workshop hosted rearly 400 scientists, students and media including representatives from the maj or research groups in the U.S., Europe, Japan and the Soviet Union.

The International Winter School on Electronic Properties of High-Temperature Superconductors, held between March 7-14, 1992, in Kirchberg, (Tyrol) Austria, was the sixth in a series of meetings to be held at this venue. Four of the earlier meetings were dedicated to issues in the field of conducting polymers, while the winter school held in 1990 was devoted to the new discipline of high-T c superconductivity. This year's meeting constituted a forum not only for the large number of scientists engaged in high-Tc research, but also for those involved in the new and exciting field of fullerenes. Many of the issues raised during the earlier winter schools on conducting polymers, and the last one on high-T c superconductivity, have taken on a new significance in the light of the discovery of superconducting C materials. 60 The Kirchberg meetings are organized in the style of a school where expe rienced scientists from universities, research laboratories and industry have the opportunity to discuss their most recent results, and where students and young scientists can learn about the present status of research and applications from some of the most eminent workers in their field. In common with the previous winter school on high-Tc superconductors, the of the cuprate superconductors. present one focused on the electronic properties In addition, consideration was given to related compounds which are relevant to the understanding of the electronic structure of the cuprates in the normal state, to other oxide superconductors and to fulleride superconductors.

Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. A review is given of the history of semiconductor-laser development and applications and of the materials used in lasing at short to long wavelengths. The basic design principles for semiconductor-laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies. The characterizations of laser materials and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph ous state. The two extremes of this range attract a large amount of inter est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984."

This volume contains the proceedings of the International Winter School on Electronic Properties of High Temperature Superconductors, which was held March 3-10, 1990, in Kirchberg (Tyrol), Austria. This course was a sequel to three meetings on the subject of conducting polymers held there one, three and five years previously. The new topic was taken up since many of the scientists working on conducting polymers are now also actively interested in high-Tc superconductors, a research area that continues to develop at a remarkable pace. There have been numerous specialist conferences on high-Tc superconductors since their discovery by Bednorz and Muller in 1986. The Kirchberg meetings are intended as a school where experienced scientists from universities, research laboratories, and industry have the opportunity to discuss their most recent results, and where young scientists and students can learn about the present status of research in this field. The 1990 winter school was again organized in cooperation with the "Bundesministerium fur Wissenschaft in Austria and with the "Bundesministerium fur Forschung und Forschung" und Technologie" in the Federal Republic of Germany. The scientific interest was focused on the electronic structure of high-Tc superconductors and related compounds. At the beginning of each session, tutorial contributions were presented as an introduction for non-specialists. These were followed by research contributions elucidating the current state of our know ledge about high-Tc superconductors.

This volume contains the proceedings of the first ISSP International Symposium on the Physics and Chemistry of Organic Superconductors, which was held at the Komaba Eminence Hotel in Tokyo, August 28-30, 1989. This symposium was attended by 205 scientists from 12 countries. In total 106 papers were presented: 61 as posters, and 39 original papers and 6 review papers in oral sessions. Of these, 102 papers are included in these proceedings. These contributions cover the interdisciplinary field of physics and chemistry of organic superconductors with particular emphasis on the following subjects and materials: - superconducting properties, - spin density waves, - electronic and structural properties, - TMTSF salts and their derivatives, - BEDT -TTF salts and their derivatives, - metal coordinated organic conductors. The contributions to this volume are arranged in 11 categories. The Organizing Committee would like to acknowledge all participants, who contributed to the great success of this symposium on a growing field in both physics and chemistry. The editors express their gratitude to the members of the Organizing and Executive Committees for their cooperation. We also wish to thank Dr. H. Lotsch of Springer-Verlag for his management of the publication and Miss S. Shibata for her assistance in editing this volume.

The renaissance of magnet technology started in the early 1950s with the establishment of high-energy accelerators. About a decade later in 1961, or fifty years after the discovery of superconductivity, high-field superconducting laboratory magnets became a reality. Conventional still the major beam-handling and experimen electromagnets, which are tal devices used in laboratories, operate at zero efficiency. To generate high magnetic fields in a useful volume, considerable amounts of power are needed. Superconducting d. c. magnets do not require any power at all. It is somewhat depressing to note that, sixty years after the first superconductor was tested, the experimental d. c. superconducting mag net is still the only large-scale equipment operated in laboratories. Al though there has been considerable activity in the area of superconduc tivity, superconductors are used on quite a modest scale in electronic and quantum devices, in medicine and biology, and in physical experi ments where high magnetic fields are essential. It is only recently that Type II superconductors have been introduced in power engineering (power generation, storage and transport) to replace pulsed accelerator magnets; for fast and economical transportation vehicles (levitated trains) where superconductors may ultimately replace the wheel; to make new means of en rgy generation economically feasible, such as in magneto hydrodynamics and in fusion reactors; and for high-efficiency electric motors. High-field superconducting magnets are being proposed for de salination of seawater, for magnetic separation in the mining industry, for cleaning polluted water, and for sewage treatment."

Recent research on superconductors with high critical temperature has led to results that were not available when the original German edition was prepared but could be included in the present English edition. This concerns materials based on bismuth and thallium, as well as measurements of low microwave loss. The author would like to thank Mr. A. H. Armstrong for translating the book from German to English in a very dedicated and competent manner. Thanks are also due once again to Springer-Verlag for their generous support and cordial cooperation. Bad Salzdetfurth September 1989 Johann H. Rinken Preface to the German Edition The development of materials which lose their electrical resistance when cooled, even before reaching the boiling point of liquid nitrogen, has considerably in creased the interest in superconductor technology, and with it superconductor electronics. This development had not been foreseen when work on the present book started, just over a year ago. Nevertheless, recent results of research on materials with high critical temperature are included to the extent that they seem to be confirmed and to be of interest to superconductor electronics. The present book deals with the physical and technological foundations of superconductor electronics so far as they must be known in order to under stand the principal modes of operation of superconductor electronics components.