This book provides a state of the art report of the knowledge accumulated in graphene research. The fascination with graphene has been growing very rapidly in recent years and the physics of graphene is now becoming one of the most interesting as well as the most fast-moving topics in condensed-matter physics. The Nobel prize in physics awarded in 2010 has given a tremendous impetus to this topic. The horizon of the physics of graphene is ever becoming wider, where physical concepts go hand in hand with advances in experimental techniques. Thus this book is expanding the interests to not only transport but optical and other properties for systems that include multilayer as well as monolayer graphene systems. The book comprises experimental and theoretical knowledge. The book is also accessible to graduate students.

One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational properties of these novel channel materials. The first part of the thesis focuses on the vibrational properties of various oxides on Ge, making it possible to identify the vibrational signature of specific defects which could hamper the proper functioning of MOSFETs. The second part of the thesis reports on the electronic and vibrational properties of novel 2D materials like silicene and germanene, the Si and Ge 2D counterparts of graphene. The interaction of these 2D materials with metallic and non-metallic substrates is investigated. It was predicted, for the first time, and later experimentally confirmed, that silicene could be grown on a non-metallic template like MoS_2, a breakthrough that could open the door to the possible use of silicene in future nanoelectronic devices.

Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times. This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch–De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree–Fock equations, and Landau’s Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg–Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov’s flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Synchrotron radiation is today extensively used for fundamental and applied research in many different fields of science. Its exceptional characteristics in terms of intensity, brilliance, spectral range, time structure and now also coherence pushed many experimental techniques to previously un-reachable limits, enabling the performance of experiments unbelievable only few years ago. The book gives an up-to-date overview of synchrotron radiation research today with a view to the future, starting from its generation and sources, its interaction with matter, illustrating the main experimental technique employed and provides an overview of the main fields of research in which new and innovative results are obtained. The book is addressed to PhD students and young researchers to provide both an introductory and a rather deep knowledge of the field. It will also be helpful to experienced researcher who want to approach the field in a professional way.

Aimed at electronics industry professionals, this 4th edition of the Boundary Scan Handbook describes recent changes to the IEEE1149.1 Standard Test Access Port and Boundary-Scan Architecture. This updated edition features new chapters on the possible effects of the changes on the work of the practicing test engineers and the new 1149.8.1 standard. Anyone needing to understand the basics of boundary scan and its practical industrial implementation will need this book. Provides an overview of the recent changes to the 1149.1 standard and the effect of the changes on the work of test engineers; Explains the new IEEE 1149.8.1 subsidiary standard and applications; Describes the latest updates on the supplementary IEEE testing standards. In particular, addresses: IEEE Std 1149.1 Digital Boundary-ScanIEEE Std 1149.4 Analog Boundary-ScanIEEE Std 1149.6 Advanced I/O TestingIEEE Std 1149.8.1 Passive Component TestingIEEE Std 1149.1-2013 The 2013 Revision of 1149.1IEEE Std 1532 In-System ConfigurationIEEE Std 1149.6-2015 The 2015 Revision of 1149.6

This handbook is a compendium giving a comprehensive description of the basics of semiconductor physics relevant to the design and analysis of thin film solar cell materials. It starts from the basics of material science, describing the material and its growth, defect and electrical properties, the basics of its interaction with photons and the involved statistics, proceeding to space charge effects in semiconductors and pn-junctions. Most attention is given to analyze homo- and hetero-junction solar cells using various models and applying the field-of-direction analysis for discussing current voltage characteristics, and helping to discover the involvement of high-field effects in solar cells. The comprehensive coverage of the main topics of - and relating to - solar cells with extensive reference to literature helps scientists and engineers at all levels to reach a better understanding and improvement of solar cell properties and their production. The author is one of the founders of thin film solar cell research.

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices. Three outstanding results are reported: (1) LaNiO3-LaAlO3 superlattices with fewer than three consecutive NiO2 layers exhibit a novel spiral spin density wave, whereas superlattices with thicker nickel-oxide layer stacks remain paramagnetic. The magnetic transition is thus determined by the dimensionality of the electron system. The polarization plane of the spin density wave can be tuned by epitaxial strain and spatial confinement of the conduction electrons. (2) Further experiments on the same system revealed an unusual structural phase transition controlled by the overall thickness of the superlattices. The transition between uniform and twin-domain states is confined to the nickelate layers and leaves the aluminate layers unaffected. (3) Superlattices based on the high-temperature superconductor YBa2Cu3O7 exhibit an incommensurate charge density wave order that is stabilized by heterointerfaces. These results suggest that interfaces can serve as a powerful tool to manipulate the interplay between spin order, charge order, and superconductivity in cuprates and other transition metal oxides.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

This book is expected to present state-of-the-art understanding of a selection of excitonic and photonic processes in useful materials from semiconductors to insulators to metal/insulator nanocomposites, both inorganic and organic. Among the featured applications are components of solar cells, detectors, light-emitting devices, scintillators and materials with novel optical properties. Excitonic properties are particularly important in organic photovoltaics and light emitting devices, as also in questions of the ultimate resolution and efficiency of new-generation scintillators for medical diagnostics, border security and nuclear non proliferation. Novel photonic and optoelectronic applications benefit from new material combinations and structures to be discussed.

How much knowledge can we gain about a physical system and to what degree can we control it? In quantum optical systems, such as ion traps or neutral atoms in cavities, single particles and their correlations can now be probed in a way that is fundamentally limited only by the laws of quantum mechanics. In contrast, quantum many-body systems pose entirely new challenges due to the enormous number of microscopic parameters and their small length- and short time-scales. This thesis describes a new approach to probing quantum many-body systems at the level of individual particles: Using high-resolution, single-particle-resolved imaging and manipulation of strongly correlated atoms, single atoms can be detected and manipulated due to the large length and time-scales and the precise control of internal degrees of freedom. Such techniques lay stepping stones for the experimental exploration of new quantum many-body phenomena and applications thereof, such as quantum simulation and quantum information, through the design of systems at the microscopic scale and the measurement of previously inaccessible observables.

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

This work describes theoretical and experimental advances towards the realization of a hybrid quantum processor in which the collective degrees of freedom of an ensemble of spins in a crystal are used as a multi-qubit register for superconducting qubits. A memory protocol made of write, read and reset operations is first presented, followed by the demonstration of building blocks of its implementation with NV center spins in diamond. Qubit states are written by resonant absorption of a microwave photon in the spin ensemble and read out of the memory on-demand by applying Hahn echo refocusing techniques to the spins. The reset step is implemented in between two successive write-read sequences using optical repumping of the spins.

This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.

The series Advances in Polymer Science presents critical reviews of the present and future trends in polymer and biopolymer science. It covers all areas of research in polymer and biopolymer science including chemistry, physical chemistry, physics, material science. The thematic volumes are addressed to scientists, whether at universities or in industry, who wish to keep abreast of the important advances in the covered topics. Advances in Polymer Science enjoys a longstanding tradition and good reputation in its community. Each volume is dedicated to a current topic, and each review critically surveys one aspect of that topic, to place it within the context of the volume. The volumes typically summarize the significant developments of the last 5 to 10 years and discuss them critically, presenting selected examples, explaining and illustrating the important principles, and bringing together many important references of primary literature. On that basis, future research directions in the area can be discussed. Advances in Polymer Science volumes thus are important references for every polymer scientist, as well as for other scientists interested in polymer science - as an introduction to a neighboring field, or as a compilation of detailed information for the specialist. Review articles for the individual volumes are invited by the volume editors. Single contributions can be specially commissioned. Readership: Polymer scientists, or scientists in related fields interested in polymer and biopolymer science, at universities or in industry, graduate students

As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content: Low-dimensional semiconductor structures Magnetism in solids Diluted magnetic semiconductors Magnetic electrodes Spin injection Spin transistor Spin interference Spin Hall effect Quantum spin Hall effect Topological insulators Quantum computation with electron spins

Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is known about the defining characteristics of these traps, making engineered strategies for their removal difficult. This thesis outlines pulsed optically detected magnetic resonance as a powerful spectroscopy of the chemical and electronic nature of these deleterious states. Counterintuitive for such heavy atom materials, some trap species possess very long spin coherence lifetimes (up to 1.6 s). This quality allows use of the trapped charge's magnetic moment as a local probe of the trap state itself and its local environment. Beyond state characterization, this spectroscopy can demonstrate novel effects in heterostructured nanocrystals, such as spatially-remote readout of spin information and the coherent control of light harvesting yield.

This book presents an investigation of the anomalous and topological Hall effects in some itinerant ferromagnets and helimagnets by measurements of Hall effects driven by electrical or heat current. New clarifications are provided for spin-dependent Hall effects induced by the Berry phase, skew scattering, and scalar spin chirality. The author reveals the scattering-free nature of the Berry-phase-induced anomalous Hall current by conducting the first comparative study of electrical and thermal Hall effects. The impurity-element dependence of the anomalous Hall effect caused by skew scattering is systematically investigated in the low-resistivity region for Fe. Two new examples showing a topological Hall effect are found in helimagnets, in which nonzero scalar spin chirality arises from the modulation of spin structure through Dzyaloshinsky-Moriya (DM) interaction. Such a DM-interaction-mediated topological Hall effect is a new type of topological Hall effect. Also the temperature dependence of topological Hall terms in the thermal Hall effect and Nernst-Ettingshausen effect is found to be totally different from that in the electrical Hall effect. These results will be useful for applications of spin current to devices with low power consumption.