For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter-in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems-and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Worldwide, many researchers are fascinated from the rich physics of se- conductor quantum dots (QDs) and their high potential for applications in photonics and quantum information technology. QDs are nanometer-sized three-dimensional structures which con?ne electrons and holes in dimensions oftheircorrespondingDeBrogliewavelength.Asaresult,theenergylevelsare quantized and for that reason they are also often referred as arti?cial atoms. Epitaxially grown QDs which are the subject of this book are embedded in a solid state semiconductor matrix and their size, shape, composition, and lo- tion can be tailored to a large extent by modern growth techniques. In QDs, excitations can involve more than a single carrier and interaction among the carriers modify or even dominate the emission properties. Therefore, a simple two-level description is only appropriate under certain well de?ned expe- mental conditions. Tremendous progress has been obtained in understanding their electronic, optical and spin properties mainly by performing single dot spectroscopy and using appropriate theoretical models.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

This thesis describes a novel and robust way of deriving a Hamiltonian of the interacting boson model based on microscopic nuclear energy density functional theory. Based on the fact that the multi-nucleon induced surface deformation of finite nucleus can be simulated by effective boson degrees of freedom, observables in the intrinsic frame, obtained from self-consistent mean-field method with a microscopic energy density functional, are mapped onto the boson analog. Thereby, the excitation spectra and the transition rates for the relevant collective states having good symmetry quantum numbers are calculated by the subsequent diagonalization of the mapped boson Hamiltonian. Because the density functional approach gives an accurate global description of nuclear bulk properties, the interacting boson model is derived for various situations of nuclear shape phenomena, including those of the exotic nuclei investigated at rare-isotope beam facilities around the world. This work provides, for the first time, crucial pieces of information about how the interacting boson model is justified and derived from nucleon degrees of freedom in a comprehensive manner.

The mid-infrared (2-10Am) spectral region is of enormous scientific and technological interest because it contains the strongest fingerprint absorption bands of a number of pollutant and toxic gases which require monitoring in a variety of different situations (e.g., oil-rigs, coal mines, landfill sites and car exhausts) and in concentrations, ranging from parts per billion to almost 100%. Organic liquids, narcotics and many biological and bio-medical analytes also have fingerprint absorptions in this spectral range. In addition, the atmospheric transmission window between 3 Am and 5 Am enables free-space optical communications, thermal imaging and the development of infrared counter-measures for "homeland security." However, many of these applications require technology based on un-cooled, efficient, inexpensive sources and detectors which are not yet available and so wide exploitation of this spectral range has yet to take place.

There is no doubt that the practical realisation of mid-infrared semiconductor lasers, LEDs and detectors which can operate at room temperature will transform them from a specialist research curiosity to a pervasive technology that will unlock a wide variety of applications. Many of the necessary developments depend on the ability to fabricate suitable high-quality epitaxial materials through the use of strained-layer engineering at the nanoscale and to manipulate the optoelectronic properties of the corresponding quantum device structures. There are a number of different materials, active region designs and device structures currently being investigated for both light sources and detectors. Many of the salient features together with recent progress ineach of these areas is presented in this text.

Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological advances in this rapidly developing area. It is divided into four parts. First, some of the basic physics and the main problems facing the device engineer (together with a comparison of possible solutions) are presented. Next, there is a consideration of the different types of lasers currently under development. For practical mid-infrared applications semiconductor lasers must operate at room temperature and several different approaches to achieve this, particularly within the difficult 3a "4 Am spectral region are discussed. Part III reviews recent work on light-emitting diodes and photodetectors and also deals with negative luminescence. The final part of the book is concerned with applications and highlights, once more, the diversity and technological importance of the mid-infrared spectral region.

The text has been produced by a world-wide authorship of experts in mid-infrared physics and technology, each working at the cutting edge in their own specialist area. Mid-infrared Semiconductor Optoelectronics will be an invaluable reference for researchers and graduate students drawn from backgrounds in physics, electronic and electrical engineering and materials science. Its breadth and thoroughness also make it an excellent starting point for further research and investigation.

A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book introduces readers to the characteristic features of electromagnetic phenomena in superconductivity. It first demonstrates not only that the diamagnetism in the superconductivity complies with Maxwell's theory, which was formulated before the discovery of superconductivity, but also that the dominant E-B analogy in the electromagnetism loses perfection without the superconductivity. The book then explores flux pinning, which is responsible for the non-dissipative current in DC, leading to irreversibility in AC. Drawing on Maxwell's work, it also proves theoretically that if there is no energy dissipation in the superconductivity caused by the break in time reversal symmetry, it contradicts the thermodynamic principle of energy conservation - something that had previously only been proved experimentally. Lastly, the book addresses the longitudinal magnetic field effect, and explains how this phenomenon leads to a new development of Maxwell's theory. Featuring numerous appendices to help readers understand the methods of derivation of equations, this book offers students and young scientists an introduction to applied superconductivity, especially in the context of power applications. Presenting the characteristic features of electromagnetic phenomena in superconductivity from basic to advanced topics for applications, the book offers a valuable resource for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

This book presents the basics of superconductivity and applications of superconducting magnets. It explains the phenomenon of superconductivity, describes theories of superconductivity, and discusses type II and high-temperature cuprate superconductors. The main focus of the book is the application of superconducting magnets in accelerators, fusion reactors and other advanced applications such as nuclear magnetic resonance (NMR), magnetic resonance imaging (MRI), high-gradient magnetic separation (HGMS), and superconducting magnetic energy storage (SMES). This new and significantly extended second edition covers the state of the art in the development of novel superconductors for advanced magnet applications, as well as the production of practical superconducting wires, tapes, and ultra high current cables used for high-field magnets. It includes two new chapters each devoted to MgB2 and Fe-based superconductors, and discusses the recently developed and world record-setting 45.5-Tesla magnetic field generated by a combination of conventional and high-temperature cuprate superconducting magnets. In addition, it discusses the status and outlook of all current and future nuclear fusion reactors worldwide. The chapter on accelerators includes the ongoing efforts to build high luminosity LHC (HL-LHC), the high-energy 28 TeV LHC (HE-LHC), the future circular collider (FCC) at CERN, and the just launched electro-ion collider (EIC) at Brookhaven National Laboratory. The book is based on the long-standing experience of the author in studying superconducting materials, building magnets and delivering numerous lectures to research scholars and students. The book provides comprehensive and fundamental knowledge in the field of applied superconductivity, greatly benefiting researchers and graduate students wishing to learn more about the various aspects of superconductivity and advanced magnet applications.

Metal-semiconductor nanostructures represent an important new class of materials employed in designing advanced optoelectronic and nanophotonic devices, such as plasmonic nanolasers, plasmon-enhanced light-emitting diodes and solar cells, plasmonic emitters of single photons, and quantum devices operating in infrared and terahertz domains. The combination of surface plasmon resonances in conducting structures, providing strong concentration of an electromagnetic optical field nearby, with sharp optical resonances in semiconductors, which are highly sensitive to external electromagnetic fields, creates a platform to control light on the nanoscale. The design of the composite metal-semiconductor system imposes the consideration of both the plasmonic resonances in metal and the optical transitions in semiconductors - a key issue being their resonant interaction providing a coupling regime. In this book the reader will find descriptions of electrodynamics of conducting structures, quantum physics of semiconductor nanostructures, and guidelines for advanced engineering of metal-semiconductor composites. These constituents form together the physical basics of the metal-semiconductor plasmonics, underlying many effective practical applications. The list of covered topics also includes the review of recent results, such as the achievement of a strong coupling regime, and the preservation of non-classical statistics of photons in plasmonic cavities combined with semiconductor nanostructures.

This is the second edition of a very popular 1991 book describing the physics and technology of semiconductor electronic devices exploiting the Hall effect. These are magnetic field sensitive devices such as Hall elements, magnetoresistors, and magnetotransistors. Hall effect devices are commonly used as magnetic field sensors and as means for characterizing semiconductors.
The book provides a clear analysis of the relationship between the basic physical phenomena in solids, the appropriate materials characteristics, and the characteristics of Hall effect devices. Particular emphasis is placed on important developments inspired and made possible by recent advances in microelectronics.
A special feature of the book is its broad scope. The book provides physical basics of Hall effect devices, clear guidelines for the design of practical Hall elements, detailed descriptions of the best interface electronic circuits, examples of the most successful industrial products in the field, and interesting examples of their applications.

"Semiconductor-On-Insulator Materials for NanoElectronics Applications is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This book presents a theoretical study of the generation and conversion of phonon angular momentum in crystals. Recently, rotational motions of lattice vibrations, i.e., phonons, in crystals attract considerable attentions. As such, the book theoretically demonstrate generations of phonons with rotational motions, based on model calculations and first-principle calculations. In systems without inversion symmetry, the phonon angular momentum is shown to be caused by the temperature gradient, which is demonstrated in crystals such as wurtzite gallium nitride, tellurium, and selenium using the first-principle calculations. In systems with neither time-reversal nor inversion symmetries, the phonon angular momentum is shown to be generated by an electric field. Secondly, the book presents the microscopic mechanisms developed by the author and his collaborator on how these microscopic rotations of nuclei are coupled with electron spins. These predictions serve as building blocks for spintronics with phonons or mechanical motions.

This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.

This book is an introductory work on the broad topics included in Materials Science. It encompasses a number of different materials classes and properties with a focus on the structure-property relationships between them. Each class of materials will include and discuss recycling techniques and other green methods of production. Materials Chemistry: For Scientists and Engineers is ideal for all newcomers to the fi eld as well as for those seeking a knowledge of solid state chemistry.

This book is a professional's guide to the business and technology of silicon (semiconductor) design and manufacturing. In other words, it is a "Hitchhiker's Guide to Silicon Valley;" and an explanation of what and how the enormous electronics industry works.

For introductory graduate-level courses on solid-state devices.

This book presents the underlying functional formalism routinely used in describing the operational behavior of solid state devices.

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices (ICRTMD 2019) held in India. It brings together academicians, scientists and industrialists from various fields for the establishment of enduring connections to solve the common global challenges across a number of disciplines. The conference provides a platform to tackle complex problems from a range of perspectives, thereby modeling integrated, solution-focused thinking and partnerships.

This book describes the history of and recent developments in cobaltite and the spin-crossover (SC) phenomena. It offers readers an overview of essential research conducted on cobaltite and introduces them to the fundamentals of condensed matter physics research. The book consists of two parts. The first part reviews SC phenomena, covering the fundamental physics of SC phenomena and basic material properties of cobaltite. The second part focuses on recent topics in SC cobaltite, including the optical and dynamical features of cobaltite, thin material fabrication, and thermoelectric properties. The comprehensive coverage and clearly structured topics will especially appeal to newcomers to the field of state-of-the-art research on cobaltite and SC physics.