This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

While basic features of polarons were well recognized a long time ago and have been described in a number of review papers and textbooks, interest in the role of electron-phonon interactions and polaron dynamics in di?- ent materials has recently gone through a vigorous revival. Electron-phonon interactions have been shown to be relevant in many inorganic and organic semiconductors and polymers, colossal magnetoresistance oxides, and tra- port through nanowires and quantum dots also often depends on vibronic displacements of ions. These interactions presumably play a role in hi- temperature superconductors as well. The continued interest in polarons extends beyond the physical description of advanced materials. The ?eld has been a testing ground for analytical, semi-analytical, and numerical techniques, such as path integrals, strong-coupling perturbation expansion, advanced variational methods, exact diagonalization, Quantum Monte Carlo, and other techniques. This book reviews some recent developments in the ?eld of polarons, starting with the basics and covering a number of active directions of research. Single- and multipolaron theories have o?ered more insight into colossal magnetoresistance and in a broad spectrum of ph- ical properties of structures with reduced dimension and dimensionality such as transport, optical absorption, Raman scattering, photoluminescence, magneto-optics, etc. While nobody - at present - has a ?nal theory of hi- temperature superconductivity, we discuss one alternative (polaronic) route. We have bene?ted from discussions with many experts in the ?eld.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

Spin wave theory of magnetism and BCS theory of superconductivity are typical theories of the time before renormalization group (RG) theory. The two theories consider atomistic interactions only and ignore the energy degrees of freedom of the continuous (infinite) solid. Since the pioneering work of Kenneth G. Wilson (Nobel Prize of physics in 1982) we know that the continuous solid is characterized by a particular symmetry: invariance with respect to transformations of the length scale. Associated with this symmetry are particular field particles with characteristic excitation spectra. In diamagnetic solids these are the well known Debye bosons. This book reviews experimental work on solid state physics of the last five decades and shows in a phenomenological way that the dynamics of ordered magnets and conventional superconductors is controlled by the field particles of the infinite solid and not by magnons and Cooper pairs, respectively. In the case of ordered magnets the relevant field particles are called GSW bosons after Goldstone, Salam and Weinberg and in the case of superconductors the relevant field particles are called SC bosons. One can imagine these bosons as magnetic density waves or charge density waves, respectively. Crossover from atomistic exchange interactions to the excitations of the infinite solid occurs because the GSW bosons have generally lower excitation energies than the atomistic magnons. According to the principle of relevance the dynamics is governed by the excitations with the lowest energy. The non relevant atomistic interactions with higher energy are practically unimportant for the dynamics.

Electronic Properties of Fullerenes and other Novel Materials gives an overview of the state-of-the-art research. It presents most recent results on preparation, experimental analysis by electron spectroscopy, infrared and Raman spectroscopy, luminescence, and nonlinear optical, as well as possible technological applications. Emphasis is also placed on the superconducting properties of Fullerenes. The introductory and advanced contributions provide a good survey of the current status of this rapidly developing field.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials, andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables, space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junction

Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.

Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been discovered and developed, and our knowledge of the physical and other properties of oxide superconductors has deepened through extensive and intensive research. This knowledge has advanced superconductivity science and technology from the initial questioning stage to a more developed but still uncertain second stage where research activity in superconductivity now overlaps with fields of application. Generally speaking, science resonates with technology. Science not only complements but also competes with or stimulates technology. New scientific knowledge has triggered the second technological research stage. Much progress has been made in the development of practical devices, encouraging the application of superconductors in areas such as human levitation, a high speed levitated bearing, large current transforming leads, and high frequency devices. This technological progress has increased our understanding of the science involved, such as flux pinning and dynamics, and anomalous long-range superconducting interactions. At this important stage, international cooperation and collaborative projects can effectively sustain aggressive research and development in order to advance superconductivity to the next stages. The ISS Symposium is expected to serve as a venue for increasing our knowledge of superconductivity and for exchanging visions for future research and applications, through the presentation and discus of the latest research results. These proceedings also aim to summarize sion annual progress in high-Tc superconductivity in all fields."

The occurrence of superconductivity among the d- and f-band metals remains one of the unsolved problems of physics. The first Rochester conference on this subject in October 1971 brought together approximately 100 experimentalists and theorists, and that conference was considered successful; the published proceedings well-represented the current research at that time and has served as a "handbook" to many. In the four and one half years since the first conference, impressive progress has been made in many areas (although Berndt Matthias would be one of the first to point out that raising the m"aximum transition temperature by a significant amount was not one of them). For a variety of reasons, I decided that it was time for a Second Rochester Conference on Superconductivity in d- and f-Band Metals and it was held on April 30 and May 1, 1976. It would appear that this conference was even more successful judging from the quality of the talks and various comments made to me. I believe that this was due to the fact that the subject matter is exciting and that the timing was particularly appropriate for several areas of research that were discussed. However, I cannot rule out other factors such as the one advanced humorously by J.

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph ous state. The two extremes of this range attract a large amount of inter est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984."

Since its inception in 1966, the series of numbered volumes known as "Semiconductors and Semimetals" has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as "Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, " and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in "Semiconductors and Semimetals" have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Written and edited by internationally renowned expertsRelevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity."

Inelastic Electron Tunneling Spectroscop or lETS, provides a unique technique for electronically monitoring the vibrational modes of molecul (;5 adsorbed on a metal oxide surface. Since the discovery of the phenomena by JAKLEVIC and LM1BE in 1966, lETS has been developed by a number of scientists as a method for studying the surface chemistry of molecular species adsorbed on aluminum oxide. Recent applications of lETS include investigations of physical and chemical adsorption of hydrocarbons, studies of catalysis by metal particles, detection and identification of trace substances in air and water, and studies of biological molecules and electron damage to such molecules. lETS has been employed to investigate adhesive materials, and studies are currently in prog ress to investigate corrosion species and corrosion inhibitors on aluminum and its alloys. Electronic transitions of molecules have also been studied by lETS. The recent development of the "external doping" technique, whereby molecu lar species can be introduced into fabricated tunnel junctions, opens the door for a vast new array of surface chemical studies by lETS. lETS is rap idly becoming an important tool for the study of surface and interface phe nomena. In addition to its role in surface studies, inelastic tunneling has proved extremely valuable for the study of the electronic properties of thin metallic films, and the recent discovery of light emission from inelastic tunneling promises to be of some importance in the area of device physics."

This volume contains the proceedings of the ffiM Japan International Sympo sium on Strong Correlation and Superconductivity, which was held in Keidan ren Guest House at the foot of Mt. Fuji, May 21-25, 1989. The purpose of the Symposium was to provide an opportunity for discus sions on the problem of strong correlation of electrons in the context of high-Tc superconductivity. Sixty-eight scientists were invited from seven countries and forty-three papers were presented in the Symposium. Soon after the discovery ofhigh-Tc superconducting oxides, Professor P. W. Anderson proposed that the essence of high-Tc superconductivity lies in the strong correlation among the electrons in these materials. This proposal has stimulated a wide range of theoretical investigations on this profound and dif ficult problem, which are expected to lead eventually to new concepts describ ing strong electron correlation. In the Symposium, Anderson himself started lively discussions by his talk entitled "Myth and Reality in High-Tc Supercon ductivity," which was followed by various reports on theoretical studies and experimental results. Concise and thoughtful summaries of experiment and theory were given by Professors H. R. Ott and P. A. Lee, respectively. It is our hope that this volume reflects the present status of the research activity on this outstanding problem from the viewpoint of the basic physics and that it will further stimulate the effort to understand these fascinating systems, the high-Tc oxides."

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

This volume deals with physical properties of electrically one-dimensional conductors. It includes both a description of basic concepts and a review of recent progress in research. One-dimensional conductors are those materials in which an electric current flows easily in one specific crystal direction while the resistivity is very high in transverse directions. It was about 1973 when much attention began to be focussed on them and investigations started in earnest. The research was stimulated by the successful growth of crystals of the organic conductor TTF-TCNQ and of the inorganic conductor KCP. New concepts, characteristic of one dimension, were established in the in vestigations of their properties. Many new one-dimensional conductors were also found and synthesized. This field of research is attractive because of the discovery of new ma terials, phenomena and concepts which have only recently found a place in the framework of traditional solid-state physics and materials science. The relation of this topic to the wider field of solid-state sciences is therefore still uncertain. This situation is clearly reflected in the wide distribution of the fields of specialization of researchers. Due to this, and also to the rapid progress of research, no introductory book has been available which covers most of the important fields of research on one-dimensional conductors."

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers."

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
"

The Novel Mechanisms of Superconductivity Conference was initially conceived in the early part of 1986 as a small, 2-1/2 day workshop of 40-70 scientists, both theorists and experimentalists interested in exploring the possible evidence for exotic, non phononic superconductivity. Of course, the historic discoveries of high temperature oxide superconductors by Bednorz and Mftller and the subsequent enhancements by the Houston/Alabama groups made such a small conference impractical. The conference necessarily had to expand, 2-1/2 days became 4-1/2 days and superconductivity in the high Tc oxides became the largest single topic in the workshop. In fact, this conference became the first major conference on this topic and thus, these proceedings are also the first maj or publication. However, heavy fermion, organic and low carrier concentration superconductors remained a very important part of this workshop and articles by the leaders in these fields are included in these proceedings. Ultimately the workshop hosted rearly 400 scientists, students and media including representatives from the maj or research groups in the U.S., Europe, Japan and the Soviet Union.

The International Winter School on Electronic Properties of High-Temperature Superconductors, held between March 7-14, 1992, in Kirchberg, (Tyrol) Austria, was the sixth in a series of meetings to be held at this venue. Four of the earlier meetings were dedicated to issues in the field of conducting polymers, while the winter school held in 1990 was devoted to the new discipline of high-T c superconductivity. This year's meeting constituted a forum not only for the large number of scientists engaged in high-Tc research, but also for those involved in the new and exciting field of fullerenes. Many of the issues raised during the earlier winter schools on conducting polymers, and the last one on high-T c superconductivity, have taken on a new significance in the light of the discovery of superconducting C materials. 60 The Kirchberg meetings are organized in the style of a school where expe rienced scientists from universities, research laboratories and industry have the opportunity to discuss their most recent results, and where students and young scientists can learn about the present status of research and applications from some of the most eminent workers in their field. In common with the previous winter school on high-Tc superconductors, the of the cuprate superconductors. present one focused on the electronic properties In addition, consideration was given to related compounds which are relevant to the understanding of the electronic structure of the cuprates in the normal state, to other oxide superconductors and to fulleride superconductors.