This thesis focuses on two areas - the development of miniature plastic lasers that can be powered by LEDs, and the application of these lasers as highly sensitive sensors for vapours of nitroaromatic explosives (e.g. TNT). Polymer lasers are extremely compact visible lasers; the research described in the thesis is groundbreaking, driving forward the technology and physical understanding to allow these lasers to be routinely pumped by a single high-power LED. A notable advance in the work is the demonstration of nanoimprinted polymer lasers, which exhibit the world's lowest pump threshold densities by two orders of magnitude. The thesis also advances the application of these compact, novel lasers as highly sensitive detectors of explosive vapours, demonstrating that rapid detection can be achieved when microporous polymers are used. This work also demonstrates a prototype CMOS-based microsystem sensor for explosive vapours, exploiting a new detection approach.

Warm Dense Matter (WDM) occupies a loosely defined region of phase space intermediate between solid, liquid, gas, and plasma, and typically shares characteristics of two or more of these phases. WDM is generally associated with the combination of strongly coupled ions and moderately degenerate electrons, and careful attention to quantum physics and electronic structure is essential. The lack of a small perturbation parameter greatly limits approximate attempts at its accurate description. Since WDM resides at the intersection of solid state and high energy density physics, many high energy density physics (HEDP) experiments pass through this difficult region of phase space. Thus, understanding and modeling WDM is key to the success of experiments on diverse facilities. These include the National Ignition Campaign centered on the National Ignition Facility (NIF), pulsed-power driven experiments on the Z machine, ion-beam-driven WDM experiments on the NDCX-II, and fundamental WDM research at the Linear Coherent Light Source (LCLS). Warm Dense Matter is also ubiquitous in planetary science and astrophysics, particularly with respect to unresolved questions concerning the structure and age of the gas giants, the nature of exosolar planets, and the cosmochronology of white dwarf stars. In this book we explore established and promising approaches to the modeling of WDM, foundational issues concerning the correct theoretical description of WDM, and the challenging practical issues of numerically modeling strongly coupled systems with many degrees of freedom.

The two volumes of Handbook of Gas Sensor Materials provide a detailed and comprehensive account of materials for gas sensors, including the properties and relative advantages of various materials. Since these sensors can be applied for the automation of myriad industrial processes, as well as for everyday monitoring of such activities as public safety, engine performance, medical therapeutics, and in many other situations, this handbook is of great value. Gas sensor designers will find a treasure trove of material in these two books.

Neutron stars are the most compact astronomical objects in the universe which are accessible by direct observation. Studying neutron stars means studying physics in regimes unattainable in any terrestrial laboratory. Understanding their observed complex phenomena requires a wide range of scientific disciplines, including the nuclear and condensed matter physics of very dense matter in neutron star interiors, plasma physics and quantum electrodynamics of magnetospheres, and the relativistic magneto-hydrodynamics of electron-positron pulsar winds interacting with some ambient medium. Not to mention the test bed neutron stars provide for general relativity theories, and their importance as potential sources of gravitational waves. It is this variety of disciplines which, among others, makes neutron star research so fascinating, not only for those who have been working in the field for many years but also for students and young scientists. The aim of this book is to serve as a reference work which not only reviews the progress made since the early days of pulsar astronomy, but especially focuses on questions such as: "What have we learned about the subject and how did we learn it?", "What are the most important open questions in this area?" and "What new tools, telescopes, observations, and calculations are needed to answer these questions?". All authors who have contributed to this book have devoted a significant part of their scientific careers to exploring the nature of neutron stars and understanding pulsars. Everyone has paid special attention to writing educational comprehensive review articles with the needs of beginners, students and young scientists as potential readers in mind. This book will be a valuable source of information for these groups.

This thesis combines highly accurate optical spectroscopy data on the recently discovered iron-based high-temperature superconductors with an incisive theoretical analysis. Three outstanding results are reported: (1) The superconductivity-induced modification of the far-infrared conductivity of an iron arsenide with minimal chemical disorder is quantitatively described by means of a strong-coupling theory for spin fluctuation mediated Cooper pairing. The formalism developed in this thesis also describes prior spectroscopic data on more disordered compounds. (2) The same materials exhibit a sharp superconductivity-induced anomaly for photon energies around 2.5 eV, two orders of magnitude larger than the superconducting energy gap. The author provides a qualitative interpretation of this unprecedented observation, which is based on the multiband nature of the superconducting state. (3) The thesis also develops a comprehensive description of a superconducting, yet optically transparent iron chalcogenide compound. The author shows that this highly unusual behavior can be explained as a result of the nanoscopic coexistence of insulating and superconducting phases, and he uses a combination of two complementary experimental methods - scanning near-field optical microscopy and low-energy muon spin rotation - to directly image the phase coexistence and quantitatively determine the phase composition. These data have important implications for the interpretation of data from other experimental probes.

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source.

This book focuses on new research fields of diamond, from its growth to applications. It covers growth of atomically flat diamond films, properties and applications of diamond nanoparticles, diamond nanoparticles based electrodes and their applications for energy storage and conversion (supercapacitors, CO2 conversion etc.). Diamond for biomimetic interface, all electrochemical devices for in vivo detections and photo-electrochemical degradation of environmental hazards are highlighted.

This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. It includes properties, growth and applications. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago. With the advent of modern technologies and the successful growth of nitride substrates, these materials currently experience a second birth. Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. This area of research is fascinating for researchers and students in materials science, electrical engineering, chemistry, electronics, physics and biophysics. This book aims to be the ad-hoc instrument to this active field of research.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.

This book provides an overview of the techniques and tools of nanostructure fabrication from state-of-the-art lithography to emerging self-assembly approaches. Top-down and bottom-up methodologies along with hybrid approaches are used to illustrate the fabrication of structures including integrated circuits, semiconductor quantum dots, metallic nanoparticles, carbon nanotubes, molecular structures, nanocomposites, arrays and superstructures. Nanofabrication applications in nanoelectronics, biotechnology, nanomechanical devices and nanophotonics will be examined. This brief will present the core concepts of nanofabrication relevant to researchers and industry in this important and rapidly evolving area.

This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

This book first provides a comprehensive coverage of state-of-the-art validation solutions based on real-time signal tracing to guarantee the correctness of VLSI circuits. The authors discuss several key challenges in post-silicon validation and provide automated solutions that are systematic and cost-effective. A series of automatic tracing solutions and innovative design for debug (DfD) techniques are described, including techniques for trace signal selection for enhancing visibility of functional errors, a multiplexed signal tracing strategy for improving functional error detection, a tracing solution for debugging electrical errors, an interconnection fabric for increasing data bandwidth and supporting multi-core debug, an interconnection fabric design and optimization technique to increase transfer flexibility and a DfD design and associated tracing solution for improving debug efficiency and expanding tracing window. The solutions presented in this book improve the validation quality of VLSI circuits, and ultimately enable the design and fabrication of reliable electronic devices.

This book covers the complete spectrum of nonlinear optics and all solid state lasers.The book integrates theory, calculations and practical design, technology, experimental schemes and applications. With the expansion and further development of Laser technology, the wavelength spectrum of Lasers had to be enlarged, even to be tunable which requires the use of nonlinear optical and Laser tunable technology. It systematically summarizes and integrates the analysis of international achievements within the last 20 years in this field. It will be helpful for university teachers, graduate students as well as engineers.

This book deals with basic aspects of polymer electronics and optoelectronics. There is an enormous world-wide effort both in basic scientific research as well as in industrial development in the area of organic electronics. It is becoming increasingly clear that, if devices based on organic materials are ever going to have a significant relevance beyond being a cheap replacement for inorganic semiconductors, there will be a need to understand interface formation, film growth and functionality. A control of these aspects will allow the realisation of totally new device concepts exploiting the enormous flexibility inherent in organic chemistry. In this book we focus on oligomeric/molecular films as we believe that the control of molecular structures and interfaces provides highly defined systems which allow, on the one hand the study of the basic physics and on the other hand to find the important parameters necessary to improve organic devices.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between "More Moore" and "More than Moore" are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

The unique electronic band structure of graphene gives rise to remarkable properties when in contact with a superconducting electrode. In this thesis two main aspects of these junctions are analyzed: the induced superconducting proximity effect and the non-local transport properties in multi-terminal devices. For this purpose specific models are developed and studied using Green function techniques, which allow us to take into account the detailed microscopic structure of the graphene-superconductor interface. It is shown that these junctions are characterized by the appearance of bound states at subgap energies which are localized at the interface region. Furthermore it is shown that graphene-supercondutor-graphene junctions can be used to favor the splitting of Cooper pairs for the generation of non-locally entangled electron pairs. Finally, using similar techniques the thesis analyzes the transport properties of carbon nanotube devices coupled with superconducting electrodes and in graphene superlattices.

This thesis deals with the dynamics of state-of-the-art nanophotonic semiconductor structures, providing essential information on fundamental aspects of nonlinear dynamical systems on the one hand, and technological applications in modern telecommunication on the other. Three different complex laser structures are considered in detail: (i) a quantum-dot-based semiconductor laser under optical injection from a master laser, (ii) a quantum-dot laser with optical feedback from an external resonator, and (iii) a passively mode-locked quantum-well semiconductor laser with saturable absorber under optical feedback from an external resonator. Using a broad spectrum of methods, both numerical and analytical, this work achieves new fundamental insights into the interplay of microscopically based nonlinear laser dynamics and optical perturbations by delayed feedback and injection.

This book provides the reader with an introduction to the physics of complex plasmas, a discussion of the specific scientific and technical challenges they present and an overview of their potential technological applications. Complex plasmas differ from conventional high-temperature plasmas in several ways: they may contain additional species, including nano meter- to micrometer-sized particles, negative ions, molecules and radicals and they may exhibit strong correlations or quantum effects. This book introduces the classical and quantum mechanical approaches used to describe and simulate complex plasmas. It also covers some key experimental techniques used in the analysis of these plasmas, including calorimetric probe methods, IR absorption techniques and X-ray absorption spectroscopy. The final part of the book reviews the emerging applications of microcavity and microchannel plasmas, the synthesis and assembly of nanomaterials through plasma electrochemistry, the large-scale generation of ozone using microplasmas and novel applications of atmospheric-pressure non-thermal plasmas in dentistry. Going beyond the scope of traditional plasma texts, the presentation is very well suited for senior undergraduate, graduate students and postdoctoral researchers specializing in plasma physics.

This book on pressure-induced phase transitions in AB2X4 chalcogenide compounds deals with one important AmBnXp material. The interest in these materials is caused by their properties. The results are discussed for three main groups of structural families: cubic-spinel structures, defective tetragonal structures, and other structures like layered and wurtzite-type modifications. A systematic analysis of the behavior of cubic (spinel), tetragonal (defect chalcopyrites and stannites) and other crystal modifications of AB2X4 compounds under hydrostatic pressure is performed. The behavior of AIIAl2S4, AIIGa2S4, AIIAl2Se4 and AIIGa2Se4 compounds with defective tetragonal structures, compounds with layered and wurtzite structures under hydrostatic pressure and the pressure dependence of the band gap, lattice parameters, interatomic distances, vibrational modes and pressure-induced phase transitions is discussed. Many of these compounds, except oxide spinels, undergo a pressure-induced phase transition towards the rocksalt-type structure. The phase transition is preceded by disorder in the cation sublattice. The dependence of the transition pressure to the rocksalt-type structure as a function of the compound ionicity and the size criterion is analyzed. At high pressures, all ordered-vacancy compounds are found to exhibit a band anticrossing between several conduction bands that leads to a strong decrease of its pressure coefficient and consequently to a strong non-linear pressure dependence of the direct bandgap energy. Theoretical studies of phase transitions in several ordered-vacancy compounds reveal that the existence of ordered vacancies alter the cation-anion bond distances and their compressibilities. The book is written for students, Ph D. students and specialists in materials science, phase transitions and new materials.

This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc. The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the "memory wall." The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification; hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named "Moguls" is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.

This dissertation provides the first systematic analysis of the dynamic energy efficiency of vertical-cavity surface-emitting lasers (VCSELs) for optical interconnects, a key technology to address the pressing ecological and economic issues of the exponentially growing energy consumption in data centers. Energy-efficient data communication is one of the most important fields in "Green Photonics" enabling higher bit rates at significantly reduced energy consumption per bit. In this thesis the static and dynamic properties of GaAs-based oxide-confined VCSELs emitting at 850 nm and 980 nm are analyzed and general rules for achieving energy-efficient data transmission using VCSELs at any wavelength are derived. These rules are verified in data transmission experiments leading to record energy-efficient data transmission across a wide range of multimode optical fiber distances and at high temperatures up to 85 DegreesC. Important trade-offs between energy efficiency, temperature stability, modulation bandwidth, low current-density operation and other VCSEL properties are revealed and discussed.

This thesis breaks new ground in the physics of photonic circuits for quantum optical applications. The photonic circuits are based either on ridge waveguides or photonic crystals, with embedded quantum dots providing the single qubit, quantum optical emitters. The highlight of the thesis is the first demonstration of a spin-photon interface using an all-waveguide geometry, a vital component of a quantum optical circuit, based on deterministic single photon emission from a single quantum dot. The work makes a further important contribution to the field by demonstrating the effects and limitations that inevitable disorder places on photon propagation in photonic crystal waveguides, a further key component of quantum optical circuits. Overall the thesis offers a number of highly novel contributions to the field; those on chip circuits may prove to be the only means of scaling up the highly promising quantum-dot-based quantum information technology.