The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

This book introduces the wider field of functional nanomaterials sciences, with a strong emphasis on semiconductor photonics. Whether you are studying photonic quantum devices or just interested in semiconductor nanomaterials and their benefits for optoelectronic applications, this book offers you a pedagogical overview of the relevant subjects along with topical reviews. The book discusses different yet complementary studies in the context of ongoing international research efforts, delivering examples from both fundamental and applied research to a broad readership. In addition, a hand-full of useful optical techniques for the characterization of semiconductor quantum structures and materials are addressed. Moreover, nanostructuring methods for the production of low-dimensional systems, which exhibit advantageous properties predominantly due to quantum effects, are summarized. Science and engineering professionals in the interdisciplinary domains of nanotechnology, photonics, materials sciences, and quantum physics can familiarize themselves with selected highlights with eyes towards photonic applications in the fields of two-dimensional materials research, light-matter interactions, and quantum technologies.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, GaP, ZnSe, and NaAlSi. The structural, optical, vibrational, and magnetic properties are discussed, in addition to transport and phase transformations.

This book focuses on organic semiconductors with particular attention paid to their use as photovoltaic devices. It addresses a fundamental and hitherto overlooked concept in the field of organic optoelectronics, namely the role that sub-gap states play in the performance of organic semiconducting devices. From a technological point of view, organic semiconductor-based devices are of significant interest due to their lightweight, ease of processability, conformal flexibility, and potentially low cost and low embodied energy production. Motivated by these rather unique selling points, the performance of organic semiconductors has been a subject of multidisciplinary study for more than 60 years with steady progress in applications such as solar cells, transistors, light emitting diodes, and various sensors. The book begins with a review of the main electro-optical phenomena in organic solar cells and presents a new method for measuring exciton diffusion lengths based on a low-quencher-content device structure. Furthermore, the book reveals how mid-gap trap states are a universal feature in organic semiconductor donor-acceptor blends, unexpectedly contributing to charge generation and recombination, and having profound impact on the thermodynamic limit of organic photovoltaic devices. Featuring cutting-edge experimental observations supported with robust and novel theoretical arguments, this book delivers important new insight as to the underlying dynamics of exciton generation and diffusion, charge transfer state dissociation, and indeed the ultimate fate of photogenerated free carriers.

This book introduces readers to the characteristic features of electromagnetic phenomena in superconductivity. It first demonstrates not only that the diamagnetism in the superconductivity complies with Maxwell's theory, which was formulated before the discovery of superconductivity, but also that the dominant E-B analogy in the electromagnetism loses perfection without the superconductivity. The book then explores flux pinning, which is responsible for the non-dissipative current in DC, leading to irreversibility in AC. Drawing on Maxwell's work, it also proves theoretically that if there is no energy dissipation in the superconductivity caused by the break in time reversal symmetry, it contradicts the thermodynamic principle of energy conservation - something that had previously only been proved experimentally. Lastly, the book addresses the longitudinal magnetic field effect, and explains how this phenomenon leads to a new development of Maxwell's theory. Featuring numerous appendices to help readers understand the methods of derivation of equations, this book offers students and young scientists an introduction to applied superconductivity, especially in the context of power applications. Presenting the characteristic features of electromagnetic phenomena in superconductivity from basic to advanced topics for applications, the book offers a valuable resource for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

This book first provides readers with an introduction to the underlying physics and state-of-the-art application of photon counting detectors for X-ray imaging. The authors explain that a photon-counting imaging detector can realize quantitative analysis because the detector can derive X-ray attenuation information based on the analysis of intensity changes of individual X-ray. To realize this analysis, it is important to consider the physics of an object and detector material. In this book, the authors introduce a novel analytical procedure to create quantitative X-ray images for medical diagnosis.

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

This book presents a theoretical study of the generation and conversion of phonon angular momentum in crystals. Recently, rotational motions of lattice vibrations, i.e., phonons, in crystals attract considerable attentions. As such, the book theoretically demonstrate generations of phonons with rotational motions, based on model calculations and first-principle calculations. In systems without inversion symmetry, the phonon angular momentum is shown to be caused by the temperature gradient, which is demonstrated in crystals such as wurtzite gallium nitride, tellurium, and selenium using the first-principle calculations. In systems with neither time-reversal nor inversion symmetries, the phonon angular momentum is shown to be generated by an electric field. Secondly, the book presents the microscopic mechanisms developed by the author and his collaborator on how these microscopic rotations of nuclei are coupled with electron spins. These predictions serve as building blocks for spintronics with phonons or mechanical motions.

This book deals with existing technologies of solar energy conversion as well as novel methods under consideration in academic and commercial R&D sites. The experimental results presented in the work are well crafted by both analytical and first-principle numerical simulations. The book highlights the real potential for economically justified use of solar energy at every household and/or commercial solar farms. The ever-improving methods of thin-film epitaxial growth combined with a better understanding of the sun light absorption and antireflection are highlighted. While there was a period when the material quality was considered to be cornerstone of the conversion efficiency followed by substantial efforts to optimize multiple-cell architecture, it became clear that many old ideas such as variable band gap, multi-junction intrinsic region, as well as solar tracking mechanisms offer new possibilities for improved harvesting of energy. Amplifying the importance of materials selection efficient design of the photo-voltaic elements various aspects of the production cost and the impact on the environment are discussed. In addition, the eligibility of the proposed production technologies in the current photovoltaic market are evaluated and confirmed.

This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.

This "Third Edition" updates a landmark text with the latest findings

"The Third Edition" of the internationally lauded "Semiconductor Material and Device Characterization" brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the "Third Edition" set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

"Semiconductor Material and Device Characterization" remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated "Third Edition," including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, "Semiconductor Material and Device Characterization" remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

A practical, hands-on guidebook for the efficient modeling of VCSELs

Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic.

Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem.

Highlights of the text include:

• A clear and comprehensive theoretical treatment of VCSELs
• Detailed derivations for understanding the operational principles of VCSELs
• Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs
• Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs

The optical filter is resonator based. The required passband shape of ring resonator-filters can be custom designed by the use of configurations of various ring coupled resonators. This book describes the current state-of-the-art on these devices. It provides an in-depth knowledge of the simulation, fabrication and characterization of ring resonators for use as example filters, lasers, sensors.

This book offers a primer on the fundamental theory of Andreev reflection, a fundamental process in the motion of a Cooper pair, which dominates low-energy electronic transport properties in superconductor junctions including differential conductance and Josephson current. The book concisely describes how Andreev reflection impacts the low-energy physics of electronic transport especially in topologically non-trivial superconductor junctions. In addition, it includes an introduction to topological superconductors, covering topological classification, chiral and helical superconductors, and topological edges. The book is based on the author's lecture notes, used in his intensive lectures and while supervising his upper undergraduate and early graduate students. To fully benefit from this concise primer, readers only need an undergraduate background in quantum mechanics and statistical mechanics. Further, by highlighting Josephson junctions of topological superconductors, the book offers readers a glimpse into cutting-edge topics.

Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.

This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-charge domain. This analysis method reveals new peculiar and intriguing nonlinear phenomena in memristor circuits, such as the coexistence of different nonlinear dynamical behaviors, extreme multistability and bifurcations without parameters. The book also describes how arrays of memristor-based nonlinear oscillators and locally-coupled neural networks can be applied in the field of analog computing architectures, for example for pattern recognition. The book will be of interest to scientists and engineers involved in the conceptual design of physical memristor devices and systems, mathematical and circuit models of physical processes, circuits and networks design, system engineering, or data processing and system analysis.

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices (ICRTMD 2019) held in India. It brings together academicians, scientists and industrialists from various fields for the establishment of enduring connections to solve the common global challenges across a number of disciplines. The conference provides a platform to tackle complex problems from a range of perspectives, thereby modeling integrated, solution-focused thinking and partnerships.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. * Developed from both a theoretical and experimental viewpoint * Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena * Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses * Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

Starting in the 1950s, US physicists dominated the search for elementary particles; aided by the association of this research with national security, they held this position for decades. In an effort to maintain their hegemony and track down the elusive Higgs boson, they convinced President Reagan and Congress to support construction of the multibillion-dollar Superconducting Super Collider project in Texas--the largest basic-science project ever attempted. But after the Cold War ended and the estimated SSC cost surpassed ten billion dollars, Congress terminated the project in October 1993. Drawing on extensive archival research, contemporaneous press accounts, and over one hundred interviews with scientists, engineers, government officials, and others involved, Tunnel Visions tells the riveting story of the aborted SSC project. The authors examine the complex, interrelated causes for its demise, including problems of large-project management, continuing cost overruns, and lack of foreign contributions. In doing so, they ask whether Big Science has become too large and expensive, including whether academic scientists and their government overseers can effectively manage such an enormous undertaking.

This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current-reverse bias voltage curves of their 10 m devices at a temperature of 30K, as well as the dark current-temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 m growth. The resulting 13 m arrays are being considered by a number of ground-based astronomy research groups.

A thorough examination of the present and future of semiconductor device technology

Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline’s literature.

Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include:

• Heterostructure field effect transistors
• Bipolar and CMOS transistors
• Resonant tunneling diodes
• Real space transfer transistors
• Quantum dot cellular automata
• Single electron transistors

The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the 'tricks of the trade' of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.