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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
This thesis makes significant advances towards an understanding of superconductivity in the cuprate family of unconventional, high-temperature superconductors. Even though the high-temperature superconductors were discovered over 35 years ago, there is not yet a general consensus on an acceptable theory of superconductivity in these materials. One of the early proposals suggested that collective magnetic excitations of the conduction electrons could lead them to form pairs, which in turn condense to form the superconducting state at a critical temperature Tc. Quantitative calculations of Tc using experimental data were, however, not available to verify the applicability of this magnetic mechanism. In this thesis, the author constructed an angle-resolved photoemission apparatus that could provide sufficiently accurate data of the electronic excitation spectra of samples in the normal state, data which was furthermore unusually devoid of any surface contamination. The author also applied the Bethe-Salpeter method to his uncommonly pristine and precise normal state data, and was able to predict the approximate superconducting transition temperatures of different samples. This rare combination of experiment with sophisticated theoretical calculations leads to the conclusion that antiferromagnetic correlations are a viable candidate for the pairing interaction in the cuprate superconductors.
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster and more reliable circuits with lower power consumption. The development of new processing tools and technologies aims at optimizing one or more of these requirements. This goal, however, can only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufacturing. It is thus important that experts in specific disciplines, such as device and circuit design, understand the principle, capabilities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Fundamentals of Semiconductor Processing Technologies is written to bridge different disciplines. It presents to engineers and scientists those parts of modern processing technologies that are of greatest importance to the design and manufacture of semiconductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and circuits, their electrical parameters, reliability, and yield. Fundamentals of Semiconductor Processing Technologies serves as a base on which to build an understanding of the manufacture of semiconductor products. It is written in a form to satisfy the needs of engineers and scientists in semiconductor research, development and manufacturing, and to be conveniently used for a one-semester graduate-level course in semiconductor engineering ormaterials science curriculum.
Synchrotron radiation is today extensively used for fundamental and applied research in many different fields of science. Its exceptional characteristics in terms of intensity, brilliance, spectral range, time structure and now also coherence pushed many experimental techniques to previously un-reachable limits, enabling the performance of experiments unbelievable only few years ago. The book gives an up-to-date overview of synchrotron radiation research today with a view to the future, starting from its generation and sources, its interaction with matter, illustrating the main experimental technique employed and provides an overview of the main fields of research in which new and innovative results are obtained. The book is addressed to PhD students and young researchers to provide both an introductory and a rather deep knowledge of the field. It will also be helpful to experienced researcher who want to approach the field in a professional way.
This useful reference is about CMOS circuit design for sensor and actuators to be used in wireless RF systems. It places special focus on the power and data link in a wireless system with transducers powered via the RF link, presenting novel principles and methods.
Electronics has become the largest industry, surpassing agriCUlture, auto. and heavy metal industries. It has become the industry of choice for a country to prosper, already having given rise to the phenomenal prosperity of Japan. Korea. Singapore. Hong Kong. and Ireland among others. At the current growth rate, total worldwide semiconductor sales will reach $300B by the year 2000. The key electronic technologies responsible for the growth of the industry include semiconductors. the packaging of semiconductors for systems use in auto, telecom, computer, consumer, aerospace, and medical industries. displays. magnetic, and optical storage as well as software and system technologies. There has been a paradigm shift, however, in these technologies. from mainframe and supercomputer applications at any cost. to consumer applications at approximately one-tenth the cost and size. Personal computers are a good example. going from $500IMIP when products were first introduced in 1981, to a projected $lIMIP within 10 years. Thin. light portable. user friendly and very low-cost are. therefore. the attributes of tomorrow's computing and communications systems. Electronic packaging is defined as interconnection. powering, cool ing, and protecting semiconductor chips for reliable systems. It is a key enabling technology achieving the requirements for reducing the size and cost at the system and product level."
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
This book is a comprehensive SiP design guide book. It is divided into three parts: concept and technology, design and simulation, project and case, for a total of 30 chapters. In Part one, the author proposes some new original concepts and thoughts, such as Function Density Law,Si(3)P and 4D integration. Part one also covers the latest technology of SiP and Advanced Packaging. Part two covers the latest SiP and Advanced Packaging design and simulation technologies, such as wire bonding, multi-step cavity, chip stacking, 2.5D TSV, 3D TSV, RDL, Fan- In, Fan-Out, Flip Chip, Embedded Passive, Embedded Chip, RF design, Rigid-Flex design, 4D SiP design, Multi-layout project and Team design, as well as SI, PI, thermal simulation, electrical verification and physical verification. Based on a real design case, part three introduces the design, simulation and implementation methods of different types of SiP, which has a -important reference significance for the research and development of SiP projects. This book comprehensively and deeply expounds the latest development, design ideas and design methods of contemporary SiP technology from three aspects: concept and technology, design and simulation, project and case. Through the detailed introduction of new concepts, design methods, actual projects and cases, this book describes the whole process of SiP products from the beginning of conception to the final realization and makes readers benefit from it.
This thesis presents profound insights into the origins and dynamics of beam instabilities using both experimental observations and numerical simulations. When the Recycler Ring, a high-intensity proton beam accelerator at Fermi National Accelerator Laboratory, was commissioned, it became evident that the Recycler beam experiences a very fast instability of unknown nature. This instability was so fast that the existing dampers were ineffective at suppressing it. The nature of this phenomenon, alongside several other poorly understood features of the beam, became one of the biggest puzzles in the accelerator community. The author investigated a hypothesis that the instability arises from an interaction with a dense cloud of electrons accompanying the proton beam. He studied the phenomena experimentally by comparing the dynamics of stable and unstable beams, by numerically simulating the build-up of the electron cloud and its interaction with the beam, and by constructing an analytical model of an electron cloud-driven instability with the electrons trapped in combined-function dipole magnets. He has devised a method to stabilize the beam by a clearing bunch, which conclusively revealed that the instability is caused by the electron cloud, trapped in a strong magnetic field. Finally, he conducted measurements of the microwave propagation through a single dipole magnet. These measurements have confirmed the presence of the electron cloud in combined-function magnets.
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
This book gives a fascinating picture of the state of the art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.
This thesis breaks new ground in the physics of photonic circuits for quantum optical applications. The photonic circuits are based either on ridge waveguides or photonic crystals, with embedded quantum dots providing the single qubit, quantum optical emitters. The highlight of the thesis is the first demonstration of a spin-photon interface using an all-waveguide geometry, a vital component of a quantum optical circuit, based on deterministic single photon emission from a single quantum dot. The work makes a further important contribution to the field by demonstrating the effects and limitations that inevitable disorder places on photon propagation in photonic crystal waveguides, a further key component of quantum optical circuits. Overall the thesis offers a number of highly novel contributions to the field; those on chip circuits may prove to be the only means of scaling up the highly promising quantum-dot-based quantum information technology.
Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.
Electroactive polymers have been the object of increasing academic and industrial interest and in the past ten to fifteen years substantial progress has been achieved in the development and the characterization of this important new class of conducting materials. These materials are usually classified in two large groups, according to the mode of their electric transport. One group includes polymers having transport almost exclusively of the ionic type and they are often called 'polymer electrolytes' or, in a broader way, 'polymer ionics'. The other group includes polymeric materials where the transport mechanism is mainly electronic in nature and which are commonly termed 'conducting polymers'. Ionically conducting polymers or polymer ionics may be typically described as polar macromolecular solids in which one or more of a wide range of salts has been dissolved. The most classic example is the combina tion of poly(ethylene oxide), PEO, and lithium salts, LiX. These PEO-LiX polymer ionics were first described and proposed for applications just over ten years ago. The practical relevance of these new materials was im mediately recognized and in the course of a few years the field expanded tremendously with the involvement of many academic and industrial lab oratories. Following this diversified research activity, the ionic transport mechanism in polymer ionics was soon established and this has led to the development of new host polymers of various types, new salts and advanced polymer architectures which have enabled room temperature conductivity to be raised by several orders of magnitude."
During the last few years cavity-optomechanics has emerged as a new field of research. This highly interdisciplinary field studies the interaction between micro and nano mechanical systems and light. Possible applications range from novel high-bandwidth mechanical sensing devices through the generation of squeezed optical or mechanical states to even tests of quantum theory itself. This is one of the first books in this relatively young field. It is aimed at scientists, engineers and students who want to obtain a concise introduction to the state of the art in the field of cavity optomechanics. It is valuable to researchers in nano science, quantum optics, quantum information, gravitational wave detection and other cutting edge fields. Possible applications include biological sensing, frequency comb applications, silicon photonics etc. The technical content will be accessible to those who have familiarity with basic undergraduate physics.
In this book, the fundamentals of magnetism are treated, starting at an introductory level. The origin of magnetic moments, the response to an applied magnetic field, and the various interactions giving rise to different types of magnetic ordering in solids are presented and many examples are given. Crystalline-electric-field effects are treated at a level that is sufficient to provide the basic knowledge necessary in understanding the properties of materials in which these effects play a role. Itinerant-electron magnetism is presented on a similar basis. Particular attention has been given to magnetocrystalline magnetic anisotropy and the magnetocaloric effect. Also, the usual techniques for magnetic measurements are presented. About half of the book is devoted to magnetic materials and the properties that make them suitable for numerous applications. The state of the art is presented of permanent magnets, high-density recording materials, soft-magnetic materials, Invar alloys and magnetostrictive materials. Many references are given.
The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc. are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. Other topics are: singularity in the case of transport current in a parallel magnetic field such as deviation from the Josephson relation, reversible flux motion inside pinning potentials which causes deviation from the critical state model prediction, the concept of the minimization of energy dissipation in the flux pinning phenomena which gives the basis for the critical state model, etc. Significant reduction in the AC loss in AC wires with very fine filaments originates from the reversible flux motion which is dominant in the two-dimensional pinning. The concept of minimum energy dissipation explains also the behavior of flux bundle size which determines the irreversibility line under the flux creep. The new edition has been thoroughly updated, with new sections on the progress in enhancing the critical current density in high temperature superconductors by introduction of artificial pinning centers, the effect of packing density on the critical current density and irreversibility field in MgB2 and derivation of the force-balance equation from the minimization of the free energy including the pinning energy.
This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.
This concise volume contains the key papers presented during the International NATO Advanced Research Workshop on Silicon on Insulator device technologies. The authors have moved beyond reporting the current state of the technology to explore wider issues, from the economic aspects incorporating SOI and related materials into circuits and systems to consideration of low temperature electronics, quantum devices and MEMS.
In this thesis, the pseudogap and the precursor superconducting state, which are of great importance in clarifying the superconductivity mechanism in high-temperature cuprate superconductors, are investigated with a c-axis optical study in YBa2(Cu1-xZnx)3Oy. Testing was performed over a wide energy range with smaller temperature intervals for several Zn-substituted samples, as well as for several carrier-doping levels. A spectral weight (SW) analysis, in which the pseudogap behavior can be separated from the superconducting condensate with the SW transfer to the high-energy region, revealed that the pseudogap is not the precursor of the superconductivity (carriers moving to the high-energy region with pseudogap opening never contribute to the superconducting condensation). Moreover, the high-energy transfer continues even below Tc for the Zn-substituted samples (in which we weaken the superconductivity), which gives evidence to the coexistence of the pseudogap and the superconducting gap below Tc. On the other hand, the analysis of optical conductivity revealed that a precursor state to superconductivity can be defined at temperatures much higher than Tc. The superconducting carrier density (ns) was calculated for each temperature (above and below Tc) and the results confirmed the existence of ns at temperatures above Tc. The observed real superconducting condensate (ns) above Tc puts a serious constraint on the theory for high- Tc superconductivity. A theory based on an inhomogeneous superconducting state, in which a microscopically phase-separated state in a doped Mott insulator can be observed, is the most plausible candidate. This theory can explain the existence of ns and the observed temperature range for the precursor superconducting state. The results obtained show that the pseudogap coexists with superconductivity below Tc and is not the precursor of superconductivity. On the other hand, it is also possible to define a precursor superconducting state that is different than the pseudogap. The temperature range and the observed superconducting condensate in this state can be explained with the help of the inhomogeneous superconducting state.
The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference." |
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