This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals.

This guide emphasizes jitter for time domain applications so that there is not a need to translate from frequency domain. This provides a more direct path to the results for designing in an application area where performance is specified in the time domain. The book includes classification of oscillator types and an exhaustive guide to existing research literature. It also includes classification of measurement techniques to help designers understand how the eventual performance of circuit design is verified.

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

During a century, from the Van der Waals mean field description (1874) of gases to the introduction of renormalization group (RG techniques 1970), thermodynamics and statistical physics were just unable to account for the incredible universality which was observed in numerous critical phenomena. The great success of RG techniques is not only to solve perfectly this challenge of critical behaviour in thermal transitions but to introduce extremely useful tools in a wide field of daily situations where a system exhibits scale invariance. The introduction of scaling, scale invariance and universality concepts has been a significant turn in modern physics and more generally in natural sciences. Since then, a new "physics of scaling laws and critical exponents", rooted in scaling approaches, allows quantitative descriptions of numerous phenomena, ranging from phase transitions to earthquakes, polymer conformations, heartbeat rhythm, diffusion, interface growth and roughening, DNA sequence, dynamical systems, chaos and turbulence. The chapters are jointly written by an experimentalist and a theorist. This book aims at a pedagogical overview, offering to the students and researchers a thorough conceptual background and a simple account of a wide range of applications. It presents a complete tour of both the formal advances and experimental results associated with the notion of scaling, in physics, chemistry and biology.

What could the ancient Egyptians tell us about 3D printing? How can we make lithium-ion batteries greener and more sustainable? Which materials will form the heart of future quantum computers? Plastic films, glass optical fibers, silicon crystals, and more - this book is about the history of the materials that have rapidly transformed our society over the last century and their role in the major global challenges of the future. From metal alloys ushering in a new age of industry to advanced materials laying the atomic brickwork of the Digital Revolution, the book examines the societal impact of the modern materials revolution through the twin lenses of stability and sustainability. Why aren't maglev trains mainstream? Whatever happened to graphene and carbon nanotubes? The book also looks at the unmet promises of some of the most exciting - and hyped - technologies in recent decades - superconductivity and nanotechnology. The final chapter reviews our history of materials usage, the increasing demand for many critical raw materials, and addresses the upcoming new challenges for creating a circular economy based on reusing and recycling materials.

The primary thrust of very large scale integration (VLS ) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS ) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS .

Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.

2 Homogeneous superconducting state 210 3 Superconducting phases with broken space symmetries 213 4 Flavor asymmetric quark condensates 219 5 Concluding remarks 221 Acknowledgments 222 References 223 Neutral Dense Quark Matter 225 Mei Huang and Igor Shovkovy 1 Introduction 225 2 Local charge neutrality: homogeneous phase 226 3 Global charge neutrality: mixed phase 234 4 Conclusion 238 References 238 Possibility of color magnetic superconductivity 241 Toshitaka Tatsumi, Tomoyuki Maruyama, and Eiji Nakano 1 Introduction 241 2 What is ferromagnetism in quark matter? 243 3 Color magnetic superconductivity 248 4 Chiral symmetry and magnetism 253 5 Summary and Concluding remarks 258 Acknowledgments 260 References 260 Magnetic Fields of Compact Stars with Superconducting Quark Cores 263 David M. Sedrakian, David Blaschke, and Karen M. Shahabasyan 1 Introduction 263 2 Free Energy 265 3 Ginzburg-Landau equations 267 4 Vortex Structure 269 5 Solution of Ginzburg-Landau Equations 271 6 The Magnetic Field Components 273 7 Summary 275 Acknowledgments 275 References 275 Thermal Color-superconducting Fluctuations in Dense Quark Matter 277 D. N.

The thesis by Merce Pacios exploits properties of carbon nanotubes to design novel nanodevices. The prominent electrochemical properties of carbon nanotubes are used to design diverse electrode configurations. In combination with the chemical properties and (bio)functionalization versatility, these materials prove to be very appropriate for the development of electrochemical biosensors. Furthermore, this work also evaluates the semiconductor character of carbon nanotubes (CNT) for sensor technology by using a field effect transistor configuration (FET). The CNT-FET device has been optimized for operating in liquid environments. These electrochemical and electronic CNT devices are highly promising for biomolecule sensing and for the monitoring of biological processes, which can in the future lead to applications for rapid and simple diagnostics in fields such as biotechnology, clinical and environmental research.

Historically, black body radiation in the tungsten filament lamp was our primary industrial means for producing 'artificial' light, as it replaced gas lamps. Solid state luminescent devices for applications ranging from lamps to displays have proliferated since then, particularly owing to the develop ment of semiconductors and phosphors. Our lighting products are now mostly phosphor based and this 'cold light' is replacing an increasing fraction of tungsten filament lamps. Even light emitting diodes now chal lenge such lamps for automotive brake lights. In the area of information displays, cathode ray tube phosphors have proved themselves to be outstandingly efficient light emitters with excellent colour capability. The current push for flat panel displays is quite intense, and much confusion exists as to where development and commercialization will occur most rapidly, but with the need for colour, it is now apparent that solid state luminescence will play a primary role, as gas phase plasma displays do not conveniently permit colour at the high resolution needed today. The long term challenge to develop electroluminescent displays continues, and high performance fluorescent lamps currently illuminate liquid crystal monochrome and colour displays. The development of tri component rare earth phosphors is of particular importance."

The 2007 Spring Meeting of the Arbeitskreis Festk rperphysik was held in Regensburg, Germany, March 2007, in conjunction with the Deutsche Physikalische Gesellschaft. It was one of the largest physics meetings in Europe. The present volume 47 of the Advances in Solid State Physics contains written versions of a large number of the invited talks and gives an overview of the present status of solid state physics where low-dimensional systems are dominating.

Thoroughly revised and updated, this highly successful textbook guides students through the analysis and design of transistor circuits. It covers a wide range of circuitry, both linear and switching.
Transistor Circuit Techniques: Discrete and Integrated provides students with an overview of fundamental qualitative circuit operation, followed by an examination of analysis and design procedure. It incorporates worked problems and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies, which further develop many of the circuit design techniques introduced in earlier chapters.
Part of the Tutorial Guides in Electronic Engineering series, this book is intended for first and second year undergraduate courses. A complete text on its own, it offers the added advantage of being cross-referenced to other titles in the series. It is an ideal textbook for both students and instructors.

The field of semiconductor nanostructures is of enormous and still-growing research interest. On one hand, they are already realized in mass products such as high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties such as many-particle interactions of electrons in reduced dimensions. This book bridges the gap between general semiconductor textbooks and research articles.

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster and more reliable circuits with lower power consumption. The development of new processing tools and technologies aims at optimizing one or more of these requirements. This goal, however, can only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufacturing. It is thus important that experts in specific disciplines, such as device and circuit design, understand the principle, capabilities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Fundamentals of Semiconductor Processing Technologies is written to bridge different disciplines. It presents to engineers and scientists those parts of modern processing technologies that are of greatest importance to the design and manufacture of semiconductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and circuits, their electrical parameters, reliability, and yield. Fundamentals of Semiconductor Processing Technologies serves as a base on which to build an understanding of the manufacture of semiconductor products. It is written in a form to satisfy the needs of engineers and scientists in semiconductor research, development and manufacturing, and to be conveniently used for a one-semester graduate-level course in semiconductor engineering ormaterials science curriculum.

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

This useful reference is about CMOS circuit design for sensor and actuators to be used in wireless RF systems. It places special focus on the power and data link in a wireless system with transducers powered via the RF link, presenting novel principles and methods.

Synchrotron radiation is today extensively used for fundamental and applied research in many different fields of science. Its exceptional characteristics in terms of intensity, brilliance, spectral range, time structure and now also coherence pushed many experimental techniques to previously un-reachable limits, enabling the performance of experiments unbelievable only few years ago.

The book gives an up-to-date overview of synchrotron radiation research today with a view to the future, starting from its generation and sources, its interaction with matter, illustrating the main experimental technique employed and provides an overview of the main fields of research in which new and innovative results are obtained.

The book is addressed to PhD students and young researchers to provide both an introductory and a rather deep knowledge of the field. It will also be helpful to experienced researcher who want to approach the field in a professional way.

Electronics has become the largest industry, surpassing agriCUlture, auto. and heavy metal industries. It has become the industry of choice for a country to prosper, already having given rise to the phenomenal prosperity of Japan. Korea. Singapore. Hong Kong. and Ireland among others. At the current growth rate, total worldwide semiconductor sales will reach $300B by the year 2000. The key electronic technologies responsible for the growth of the industry include semiconductors. the packaging of semiconductors for systems use in auto, telecom, computer, consumer, aerospace, and medical industries. displays. magnetic, and optical storage as well as software and system technologies. There has been a paradigm shift, however, in these technologies. from mainframe and supercomputer applications at any cost. to consumer applications at approximately one-tenth the cost and size. Personal computers are a good example. going from $500IMIP when products were first introduced in 1981, to a projected $lIMIP within 10 years. Thin. light portable. user friendly and very low-cost are. therefore. the attributes of tomorrow's computing and communications systems. Electronic packaging is defined as interconnection. powering, cool ing, and protecting semiconductor chips for reliable systems. It is a key enabling technology achieving the requirements for reducing the size and cost at the system and product level."

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

This book presents comprehensive studies of charge density waves (CDW) in a high-Tc cuprate superconductor using x-ray scattering techniques under uniaxial pressure. Specifically, the work addresses inelastic x-ray scattering studies under uniaxial pressure performed on the underdoped cuprate YBa2Cu3O6.67(p=0.12, Tc=65K) with incoming photon energy in the resonant (E=931.3 eV, Cu-L3 edge) and non-resonant conditions (E=17.794 keV). This is a completely new approach to the investigation of charge density waves. It revealed new features of charge density waves in cuprates, whose properties had previously been inaccessible..

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

This thesis presents profound insights into the origins and dynamics of beam instabilities using both experimental observations and numerical simulations. When the Recycler Ring, a high-intensity proton beam accelerator at Fermi National Accelerator Laboratory, was commissioned, it became evident that the Recycler beam experiences a very fast instability of unknown nature. This instability was so fast that the existing dampers were ineffective at suppressing it. The nature of this phenomenon, alongside several other poorly understood features of the beam, became one of the biggest puzzles in the accelerator community. The author investigated a hypothesis that the instability arises from an interaction with a dense cloud of electrons accompanying the proton beam. He studied the phenomena experimentally by comparing the dynamics of stable and unstable beams, by numerically simulating the build-up of the electron cloud and its interaction with the beam, and by constructing an analytical model of an electron cloud-driven instability with the electrons trapped in combined-function dipole magnets. He has devised a method to stabilize the beam by a clearing bunch, which conclusively revealed that the instability is caused by the electron cloud, trapped in a strong magnetic field. Finally, he conducted measurements of the microwave propagation through a single dipole magnet. These measurements have confirmed the presence of the electron cloud in combined-function magnets.