The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

This thesis presents the first successful realization of a compact, low-noise, and few-cycle light source in the mid-infrared wavelength region. By developing the technology of pumping femtosecond chromium-doped II-VI laser oscillators directly with the emission of broad-stripe single-emitter laser diodes, coherent light was generated with exceptionally low amplitude noise - crucial for numerous applications including spectroscopy at high sensitivities. Other key parameters of the oscillator's output, such as pulse duration and output power, matched and even surpassed previous state-of-the-art systems. As a demonstration of its unique capabilities, the oscillator's powerful output was used to drive - without further amplification - the nonlinear generation of coherent mid-infrared light spanning multiple octaves. The resulting table-top system uniquely combines high brilliance and ultrabroad spectral bandwidth in the important mid-infrared spectral range. The rapid development of this technology is comprehensively and lucidly documented in this PhD thesis. Together with a thorough review of literature and applications, and an extensive analysis of the theoretical foundations behind ultrafast laser oscillators, the thesis will serve as a valuable reference for the construction of a new generation of mid-infrared light sources.

The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

This monograph presents an intuitive theory of trial wave functions for strongly interacting fermions in fractional quantum Hall states. The correlation functions for the proposed fermion interactions follow a novel algebraic approach that harnesses the classical theory of invariants and semi-invariants of binary forms. This approach can be viewed as a fitting and far-reaching generalization of Laughlin's approach to trial wave functions. Aesthetically viewed, it illustrates an attractive symbiosis between the theory of invariants and the theory of correlations. Early research into numerical diagonalization computations for small numbers of electrons shows strong agreement with the constructed trial wave functions.The monograph offers researchers and students of condensed matter physics an accessible discussion of this interesting area of research.

This book studies the fundamental aspects of many-body physics in quantum systems open to an external world. Recent remarkable developments in the observation and manipulation of quantum matter at the single-quantum level point to a new research area of open many-body systems, where interactions with an external observer and the environment play a major role. The first part of the book elucidates the influence of measurement backaction from an external observer, revealing new types of quantum critical phenomena and out-of-equilibrium dynamics beyond the conventional paradigm of closed systems. In turn, the second part develops a powerful theoretical approach to study the in- and out-of-equilibrium physics of an open quantum system strongly correlated with an external environment, where the entanglement between the system and the environment plays an essential role. The results obtained here offer essential theoretical results for understanding the many-body physics of quantum systems open to an external world, and can be applied to experimental systems in atomic, molecular and optical physics, quantum information science and condensed matter physics.

This book discusses non-equilibrium quantum many-body dynamics, recently explored in an analog quantum simulator of strongly correlated ultracold atoms. The first part presents a field-theoretical analysis of the experimental observability of the Higgs amplitude mode that emerges as a relativistic collective excitation near a quantum phase transition of superfluid Bose gases in an optical lattice potential. The author presents the dynamical susceptibilities to external driving of the microscopic parameters, taking into account a leading-order perturbative correction from quantum and thermal fluctuations and shows clear signatures of the Higgs mode in these observables. This is the first result that strongly supports the stability of the Higgs mode in three-dimensional optical lattices even in the presence of a spatially inhomogeneous confinement potential and paves the way for desktop observations of the Higgs mode. In the second part, the author applies the semi-classical truncated-Wigner approximation (TWA) to far-from-equilibrium quantum dynamics. Specifically, he considers the recent experiments on quantum-quench dynamics in a Bose-Hubbard quantum simulator. A direct comparison shows remarkable agreement between the numerical results from TWA and the experimental data. This result clearly indicates the potential of such a semi-classical approach in reliably simulating many-body systems using classical computers. The book also includes several chapters providing comprehensive reviews of the recent studies on cold-atomic quantum simulation and various theoretical methods, including the Schwinger-boson approach in strongly correlated systems and the phase-space semi-classical method for far-from-equilibrium quantum dynamics. These chapters are highly recommended to students and young researchers who are interested in semi-classical approaches in non-equilibrium quantum dynamics.

This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.

What are the physical mechanisms that underlie the efficient generation and transfer of energy at the nanoscale? Nature seems to know the answer to this question, having optimised the process of photosynthesis in plants over millions of years of evolution. It is conceivable that humans could mimic this process using synthetic materials, and organic semiconductors have attracted a lot of attention in this respect. Once an organic semiconductor absorbs light, bound pairs of electrons with positively charged holes, termed `excitons', are formed. Excitons behave as fundamental energy carriers, hence understanding the physics behind their efficient generation and transfer is critical to realising the potential of organic semiconductors for light-harvesting and other applications, such as LEDs and transistors. However, this problem is extremely challenging since excitons can interact very strongly with photons. Moreover, simultaneously with the exciton motion, organic molecules can vibrate in hundreds of possible ways, having a very strong effect on energy transfer. The description of these complex phenomena is often beyond the reach of standard quantum mechanical methods which rely on the assumption of weak interactions between excitons, photons and vibrations. In this thesis, Antonios Alvertis addresses this problem through the development and application of a variety of different theoretical methods to the description of these strong interactions, providing pedagogical explanations of the underlying physics. A comprehensive introduction to organic semiconductors is followed by a review of the background theory that is employed to approach the relevant research questions, and the theoretical results are presented in close connection with experiment, yielding valuable insights for experimentalists and theoreticians alike.

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.

This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum.

This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.

Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for highly efficient charge generation in their application as charge injector and charge generation layer in OLEDs. This book serves as a valuable reference for researchers and as a textbook for graduate students focusing on the study and development of OLED for display and lighting.

This book discusses physical design and mask synthesis of directed self-assembly lithography (DSAL). It covers the basic background of DSAL technology, physical design optimizations such as placement and redundant via insertion, and DSAL mask synthesis as well as its verification. Directed self-assembly lithography (DSAL) is a highly promising patterning solution in sub-7nm technology.

This book explores emerging topics in atomic- and nano-scale electronics after the era of Moore's Law, covering both the physical principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics beyond traditional complementary metal-oxide semiconductors (CMOS). Moore's law is not a physical law itself, but rather a visionary prediction that has worked well for more than 50 years but is rapidly coming to its end as the gate length of CMOS transistors approaches the length-scale of only a few atoms. Thus, the key question here is: "What is the future for nanoelectronics beyond CMOS?" The possible answers are found in this book. Introducing novel quantum devices such as atomic-scale electronic devices, ballistic devices, memristors, superconducting devices, this book also presents the reader with the physical principles underlying new ways of computing, as well as their practical implementation. Topics such as quantum computing, neuromorphic computing are highlighted here as some of the most promising candidates for ushering in a new era of atomic-scale electronics beyond CMOS.

This book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. The 3rd edition has been thoroughly updated, with a new chapter on critical state model. The mechanism of irreversible properties is discussed in detail. The author provides calculations of pinning loss by the equation of motion of flux lines in the pinning potential and hysteresis loss. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. This book aims for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

Semiconductor Gas Sensors, Second Edition, summarizes recent research on basic principles, new materials and emerging technologies in this essential field. Chapters cover the foundation of the underlying principles and sensing mechanisms of gas sensors, include expanded content on gas sensing characteristics, such as response, sensitivity and cross-sensitivity, present an overview of the nanomaterials utilized for gas sensing, and review the latest applications for semiconductor gas sensors, including environmental monitoring, indoor monitoring, medical applications, CMOS integration and chemical warfare agents. This second edition has been completely updated, thus ensuring it reflects current literature and the latest materials systems and applications.

In the rapidly developing information society there is an ever-growing demand for information-supplying elements or sensors. The technology to fabricate such sensors has grown in the past few decades from a skilful activity to a mature area of scientific research and technological development. In this process, the use of silicon-based techniques has appeared to be of crucial importance, as it introduced standardized (mass) fabrication techniques, created the possibility of integrated electronics, allowed for new transduction principles, and enabled the realization of micromechanical structures for sensing or actuation. Such micromechanical structures are particularly well-suited to realize complex microsystems that improve the performance of individual sensors. Currently, a variety of sensor areas ranging from optical to magnetic and from micromechanical to (bio)chemical sensors has reached a high level of sophistication. In this MESA Monograph the proceedings of the Dutch Sensor Conference, an initiative of the Technology Foundation (STW), held at the University of Twente on March 2-3, 1998, are compiled. It comprises all the oral and poster contributions of the conference, and gives an excellent overview of the state of the art of Dutch sensor research and development. Apart from Dutch work, the contributions of two external invited experts from Switzerland are included.

There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 DegreesC, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.

This book is a self-contained advanced textbook on the mathematical-physical aspects of quantum many-body systems, which begins with a pedagogical presentation of the necessary background information before moving on to subjects of active research, including topological phases of matter. The book explores in detail selected topics in quantum spin systems and lattice electron systems, namely, long-range order and spontaneous symmetry breaking in the antiferromagnetic Heisenberg model in two or higher dimensions (Part I), Haldane phenomena in antiferromagnetic quantum spin chains and related topics in topological phases of quantum matter (Part II), and the origin of magnetism in various versions of the Hubbard model (Part III). Each of these topics represents certain nontrivial phenomena or features that are invariably encountered in a variety of quantum many-body systems, including quantum field theory, condensed matter systems, cold atoms, and artificial quantum systems designed for future quantum computers. The book's main focus is on universal properties of quantum many-body systems. The book includes roughly 50 problems with detailed solutions. The reader only requires elementary linear algebra and calculus to comprehend the material and work through the problems. Given its scope and format, the book is suitable both for self-study and as a textbook for graduate or advanced undergraduate classes.

This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the 'tricks of the trade' of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.