This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.

This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum.

What are the physical mechanisms that underlie the efficient generation and transfer of energy at the nanoscale? Nature seems to know the answer to this question, having optimised the process of photosynthesis in plants over millions of years of evolution. It is conceivable that humans could mimic this process using synthetic materials, and organic semiconductors have attracted a lot of attention in this respect. Once an organic semiconductor absorbs light, bound pairs of electrons with positively charged holes, termed `excitons', are formed. Excitons behave as fundamental energy carriers, hence understanding the physics behind their efficient generation and transfer is critical to realising the potential of organic semiconductors for light-harvesting and other applications, such as LEDs and transistors. However, this problem is extremely challenging since excitons can interact very strongly with photons. Moreover, simultaneously with the exciton motion, organic molecules can vibrate in hundreds of possible ways, having a very strong effect on energy transfer. The description of these complex phenomena is often beyond the reach of standard quantum mechanical methods which rely on the assumption of weak interactions between excitons, photons and vibrations. In this thesis, Antonios Alvertis addresses this problem through the development and application of a variety of different theoretical methods to the description of these strong interactions, providing pedagogical explanations of the underlying physics. A comprehensive introduction to organic semiconductors is followed by a review of the background theory that is employed to approach the relevant research questions, and the theoretical results are presented in close connection with experiment, yielding valuable insights for experimentalists and theoreticians alike.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for highly efficient charge generation in their application as charge injector and charge generation layer in OLEDs. This book serves as a valuable reference for researchers and as a textbook for graduate students focusing on the study and development of OLED for display and lighting.

This book explores emerging topics in atomic- and nano-scale electronics after the era of Moore's Law, covering both the physical principles behind, and technological implementations for many devices that are now expected to become key elements of the future of nanoelectronics beyond traditional complementary metal-oxide semiconductors (CMOS). Moore's law is not a physical law itself, but rather a visionary prediction that has worked well for more than 50 years but is rapidly coming to its end as the gate length of CMOS transistors approaches the length-scale of only a few atoms. Thus, the key question here is: "What is the future for nanoelectronics beyond CMOS?" The possible answers are found in this book. Introducing novel quantum devices such as atomic-scale electronic devices, ballistic devices, memristors, superconducting devices, this book also presents the reader with the physical principles underlying new ways of computing, as well as their practical implementation. Topics such as quantum computing, neuromorphic computing are highlighted here as some of the most promising candidates for ushering in a new era of atomic-scale electronics beyond CMOS.

Semiconductor Gas Sensors, Second Edition, summarizes recent research on basic principles, new materials and emerging technologies in this essential field. Chapters cover the foundation of the underlying principles and sensing mechanisms of gas sensors, include expanded content on gas sensing characteristics, such as response, sensitivity and cross-sensitivity, present an overview of the nanomaterials utilized for gas sensing, and review the latest applications for semiconductor gas sensors, including environmental monitoring, indoor monitoring, medical applications, CMOS integration and chemical warfare agents. This second edition has been completely updated, thus ensuring it reflects current literature and the latest materials systems and applications.

This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between "More Moore" and "More than Moore" are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

This thesis presents and discusses recent optical low-temperature experiments on disordered NbN, granular Al thin-films, and the heavy-fermion compound CeCoIn5, offering a unified picture of quantum-critical superconductivity. It provides a concise introduction to the respective theoretical models employed to interpret the experimental results, and guides readers through in-depth calculations supplemented with supportive figures in order to both retrace the interpretations and span the bridge between experiment and state-of-the art theory.

The present volume contains the written versions of most of the invited talks of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 25 to 29, 2002 in Regensburg, Germany. Also contained are those talks presented as part of the Symposia most of which were organized by several divisions in collaboration and covered a fascinating selection of topics of current interest. Thus this volume reflects the status of condensed matter physics in Germany in the year 2002. In particular, one notes a slight change in paradigms: from quantum dots and wires to spin transport and soft matter systems in the broadest sense. This seems to reflect the present general trend in physics. Nevertheless, a large portion of the invited papers concentrate on nanostructured matter.

This book is a self-contained advanced textbook on the mathematical-physical aspects of quantum many-body systems, which begins with a pedagogical presentation of the necessary background information before moving on to subjects of active research, including topological phases of matter. The book explores in detail selected topics in quantum spin systems and lattice electron systems, namely, long-range order and spontaneous symmetry breaking in the antiferromagnetic Heisenberg model in two or higher dimensions (Part I), Haldane phenomena in antiferromagnetic quantum spin chains and related topics in topological phases of quantum matter (Part II), and the origin of magnetism in various versions of the Hubbard model (Part III). Each of these topics represents certain nontrivial phenomena or features that are invariably encountered in a variety of quantum many-body systems, including quantum field theory, condensed matter systems, cold atoms, and artificial quantum systems designed for future quantum computers. The book's main focus is on universal properties of quantum many-body systems. The book includes roughly 50 problems with detailed solutions. The reader only requires elementary linear algebra and calculus to comprehend the material and work through the problems. Given its scope and format, the book is suitable both for self-study and as a textbook for graduate or advanced undergraduate classes.

This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the 'tricks of the trade' of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)

This book deals with the study of superconductivity in systems with coexisting wide and narrow bands. It has been previously suggested that superconductivity can be enhanced in systems with coexisting wide and narrow bands when the Fermi level is near the narrow band edge. In this book, the authors study two problems concerning this mechanism in order to: (a) provide a systematic understanding of the role of strong electron correlation effects, and (b) propose a realistic candidate material which meets the ideal criteria for high-Tc superconductivity. Regarding the role of strong correlation effects, the FLEX+DMFT method is adopted. Based on systematic calculations, the pairing mechanism is found to be indeed valid even when the strong correlation effect is considered within the formalism. In the second half of the book, the authors propose a feasible candidate material by introducing the concept of the "hidden ladder" electronic structure, arising from the combination of the bilayer lattice structure and the anisotropic orbitals of the electrons. As such, the book contributes a valuable theoretical guiding principle for seeking unknown high-Tc superconductors.

This book focuses on the topological fermion condensation quantum phase transition (FCQPT), a phenomenon that reveals the complex behavior of all strongly correlated Fermi systems, such as heavy fermion metals, quantum spin liquids, quasicrystals, and two-dimensional systems, considering these as a new state of matter. The book combines theoretical evaluations with arguments based on experimental grounds demonstrating that the entirety of very different strongly correlated Fermi systems demonstrates a universal behavior induced by FCQPT. In contrast to the conventional quantum phase transition, whose physics in the quantum critical region are dominated by thermal or quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT are controlled by a system of quasiparticles resembling the Landau quasiparticles. The book discusses the modification of strongly correlated systems under the action of FCQPT, representing the "missing" instability, which paves the way for developing an entirely new approach to condensed matter theory; and presents this physics as a new method for studying many-body objects. Based on the authors' own theoretical investigations, as well as salient theoretical and experimental studies conducted by others, the book is well suited for both students and researchers in the field of condensed matter physics.

This book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. The 3rd edition has been thoroughly updated, with a new chapter on critical state model. The mechanism of irreversible properties is discussed in detail. The author provides calculations of pinning loss by the equation of motion of flux lines in the pinning potential and hysteresis loss. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. This book aims for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.

This book is a practical guide to optical, optoelectronic, and semiconductor materials and provides an overview of the topic from its fundamentals to cutting-edge processing routes to groundbreaking technologies for the most recent applications. The book details the characterization and properties of these materials. Chemical methods of synthesis are emphasized by the authors throughout the publication. Describes new materials and updates to older materials that exhibit optical, optoelectronic and semiconductor behaviors; Covers the structural and mechanical aspects of the optical, optoelectronic and semiconductor materials for meeting mechanical property and safety requirements; Includes discussion of the environmental and sustainability issues regarding optical, optoelectronic, and semiconductor materials, from processing to recycling.

This book reports on the development and application of a new uniaxial pressure apparatus that is currently generating considerable interest in the field of materials physics. The author provides practical guidelines for performing such experiments, backed up by finite element simulations. Subsequently, the book reports on two uses of the device. In the first, high pressures are used to tune to a Van Hove singularity in Sr2RuO4, while the effects on the unconventional superconductivity and the normal state properties are investigated. In the second experiment, precise and continuous strain control is used to probe symmetry breaking and novel phase formation in the vicinity of a quantum critical point in Sr3Ru2O7.

In this book, the history of the concepts critical to the discovery and development of aluminum, its alloys and the anodizing process are reviewed to provide a foundation for the challenges, achievements, and understanding of the complex relationship between the aluminum alloy and the reactions that occur during anodic oxidation. Empirical knowledge that has long sustained industrial anodizing is clarified by viewing the process as corrosion science, addressing each element of the anodizing circuit in terms of the Tafel Equation. This innovative approach enables a new level of understanding and engineering control for the mechanisms that occur as the oxide nucleates and grows, developing its characteristic highly ordered structure, which impact the practical function of the anodic aluminum oxide.

This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field. Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been improved for 20 years, and no new superconductors have been discovered for 5 years. This book will encourage researchers as well as graduate-course students not to give up on the challenges in the future of high- Tc superconductivity.