This book is a self-contained advanced textbook on the mathematical-physical aspects of quantum many-body systems, which begins with a pedagogical presentation of the necessary background information before moving on to subjects of active research, including topological phases of matter. The book explores in detail selected topics in quantum spin systems and lattice electron systems, namely, long-range order and spontaneous symmetry breaking in the antiferromagnetic Heisenberg model in two or higher dimensions (Part I), Haldane phenomena in antiferromagnetic quantum spin chains and related topics in topological phases of quantum matter (Part II), and the origin of magnetism in various versions of the Hubbard model (Part III). Each of these topics represents certain nontrivial phenomena or features that are invariably encountered in a variety of quantum many-body systems, including quantum field theory, condensed matter systems, cold atoms, and artificial quantum systems designed for future quantum computers. The book's main focus is on universal properties of quantum many-body systems. The book includes roughly 50 problems with detailed solutions. The reader only requires elementary linear algebra and calculus to comprehend the material and work through the problems. Given its scope and format, the book is suitable both for self-study and as a textbook for graduate or advanced undergraduate classes.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book mainly deals with SuperConducting Fault Current Limiter (SCFCL), mainly the resistive SCFCLs. It aims to further disseminate the technical knowledge of SCFCL in particular to electrical engineers. The SCFCL is a new component and tool to better design and to be used in existing and future electric grids, altering the conventional way of thinking and planning.

This thesis presents and discusses recent optical low-temperature experiments on disordered NbN, granular Al thin-films, and the heavy-fermion compound CeCoIn5, offering a unified picture of quantum-critical superconductivity. It provides a concise introduction to the respective theoretical models employed to interpret the experimental results, and guides readers through in-depth calculations supplemented with supportive figures in order to both retrace the interpretations and span the bridge between experiment and state-of-the art theory.

This book introduces readers to electric circuits with variable loads and voltage regulators. It defines invariant relationships for numerous parameters, and proves the concepts characterizing these circuits. Moreover, the book presents the fundamentals of electric circuits and develops circuit theorems, while also familiarizing readers with generalized equivalent circuits and using projective geometry to interpret changes in operating regime parameters. It provides useful expressions for normalized regime parameters and changes in them, as well as convenient formulas for calculating currents. This updated and extended third edition features new chapters on the use of invariant properties in two-port circuits, invariant energy characteristics for limited single-valued two-port circuits, and on testing projective coordinates. Given its novel geometrical approach to real electrical circuits, the book offers a valuable guide for engineers, researchers, and graduate students who are interested in basic electric circuit theory and the regulation and monitoring of power supply systems.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between "More Moore" and "More than Moore" are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

This book is a practical guide to optical, optoelectronic, and semiconductor materials and provides an overview of the topic from its fundamentals to cutting-edge processing routes to groundbreaking technologies for the most recent applications. The book details the characterization and properties of these materials. Chemical methods of synthesis are emphasized by the authors throughout the publication. Describes new materials and updates to older materials that exhibit optical, optoelectronic and semiconductor behaviors; Covers the structural and mechanical aspects of the optical, optoelectronic and semiconductor materials for meeting mechanical property and safety requirements; Includes discussion of the environmental and sustainability issues regarding optical, optoelectronic, and semiconductor materials, from processing to recycling.

This book deals with the study of superconductivity in systems with coexisting wide and narrow bands. It has been previously suggested that superconductivity can be enhanced in systems with coexisting wide and narrow bands when the Fermi level is near the narrow band edge. In this book, the authors study two problems concerning this mechanism in order to: (a) provide a systematic understanding of the role of strong electron correlation effects, and (b) propose a realistic candidate material which meets the ideal criteria for high-Tc superconductivity. Regarding the role of strong correlation effects, the FLEX+DMFT method is adopted. Based on systematic calculations, the pairing mechanism is found to be indeed valid even when the strong correlation effect is considered within the formalism. In the second half of the book, the authors propose a feasible candidate material by introducing the concept of the "hidden ladder" electronic structure, arising from the combination of the bilayer lattice structure and the anisotropic orbitals of the electrons. As such, the book contributes a valuable theoretical guiding principle for seeking unknown high-Tc superconductors.

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

This book focuses on the topological fermion condensation quantum phase transition (FCQPT), a phenomenon that reveals the complex behavior of all strongly correlated Fermi systems, such as heavy fermion metals, quantum spin liquids, quasicrystals, and two-dimensional systems, considering these as a new state of matter. The book combines theoretical evaluations with arguments based on experimental grounds demonstrating that the entirety of very different strongly correlated Fermi systems demonstrates a universal behavior induced by FCQPT. In contrast to the conventional quantum phase transition, whose physics in the quantum critical region are dominated by thermal or quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT are controlled by a system of quasiparticles resembling the Landau quasiparticles. The book discusses the modification of strongly correlated systems under the action of FCQPT, representing the "missing" instability, which paves the way for developing an entirely new approach to condensed matter theory; and presents this physics as a new method for studying many-body objects. Based on the authors' own theoretical investigations, as well as salient theoretical and experimental studies conducted by others, the book is well suited for both students and researchers in the field of condensed matter physics.

The present volume contains the written versions of most of the invited talks of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 25 to 29, 2002 in Regensburg, Germany. Also contained are those talks presented as part of the Symposia most of which were organized by several divisions in collaboration and covered a fascinating selection of topics of current interest. Thus this volume reflects the status of condensed matter physics in Germany in the year 2002. In particular, one notes a slight change in paradigms: from quantum dots and wires to spin transport and soft matter systems in the broadest sense. This seems to reflect the present general trend in physics. Nevertheless, a large portion of the invited papers concentrate on nanostructured matter.

This book presents experimental studies on emergent transport and magneto-optical properties in three-dimensional topological insulators with two-dimensional Dirac fermions on their surfaces. Designing magnetic heterostructures utilizing a cutting-edge growth technique (molecular beam epitaxy) stabilizes and manifests new quantization phenomena, as confirmed by low-temperature electrical transport and time-domain terahertz magneto-optical measurements. Starting with a review of the theoretical background and recent experimental advances in topological insulators in terms of a novel magneto-electric coupling, the author subsequently explores their magnetic quantum properties and reveals topological phase transitions between quantum anomalous Hall insulator and trivial insulator phases; a new topological phase (the axion insulator); and a half-integer quantum Hall state associated with the quantum parity anomaly. Furthermore, the author shows how these quantum phases can be significantly stabilized via magnetic modulation doping and proximity coupling with a normal ferromagnetic insulator. These findings provide a basis for future technologies such as ultra-low energy consumption electronic devices and fault-tolerant topological quantum computers.

This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author's team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Opto-electronics and electronics are likely to change dramatically in the future. This superb text, written by a collection of acclaimed international researchers, is dedicated to low-dimensional nitride semiconductors, and provides the key to modern electronics, opto-electronics, and nanotechnology. Gil explores why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based ...)

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

This book reports on the development and application of a new uniaxial pressure apparatus that is currently generating considerable interest in the field of materials physics. The author provides practical guidelines for performing such experiments, backed up by finite element simulations. Subsequently, the book reports on two uses of the device. In the first, high pressures are used to tune to a Van Hove singularity in Sr2RuO4, while the effects on the unconventional superconductivity and the normal state properties are investigated. In the second experiment, precise and continuous strain control is used to probe symmetry breaking and novel phase formation in the vicinity of a quantum critical point in Sr3Ru2O7.

This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-charge domain. This analysis method reveals new peculiar and intriguing nonlinear phenomena in memristor circuits, such as the coexistence of different nonlinear dynamical behaviors, extreme multistability and bifurcations without parameters. The book also describes how arrays of memristor-based nonlinear oscillators and locally-coupled neural networks can be applied in the field of analog computing architectures, for example for pattern recognition. The book will be of interest to scientists and engineers involved in the conceptual design of physical memristor devices and systems, mathematical and circuit models of physical processes, circuits and networks design, system engineering, or data processing and system analysis.

In this book, the history of the concepts critical to the discovery and development of aluminum, its alloys and the anodizing process are reviewed to provide a foundation for the challenges, achievements, and understanding of the complex relationship between the aluminum alloy and the reactions that occur during anodic oxidation. Empirical knowledge that has long sustained industrial anodizing is clarified by viewing the process as corrosion science, addressing each element of the anodizing circuit in terms of the Tafel Equation. This innovative approach enables a new level of understanding and engineering control for the mechanisms that occur as the oxide nucleates and grows, developing its characteristic highly ordered structure, which impact the practical function of the anodic aluminum oxide.

Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires' characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

This book gives a readable introduction to the important, rapidly developing, field of nanophotonics. It provides a quick understanding of the basic elements of the field, allowing students and newcomers to progress rapidly to the frontiers of their interests. Topics include: The basic mathematical techniques needed for the study of the materials of nanophotonic technology; photonic crystals and their applications as laser resonators, waveguides, and circuits of waveguides; the application of photonic crystals technology in the design of optical diodes and transistors; the basic properties needed for the design and understanding of new types of engineered materials known as metamaterials; and a consideration of how and why these engineered materials have been formulated in the lab, as well as their applications as negative refractive index materials, as perfect lens, as cloaking devices, and their effects on Cherenkov and other types of radiation. Additionally, the book introduces the new field of plasmonics and reviews its important features. The role of plasmon-polaritons in the scattering and transmission of light by rough surfaces and the enhanced transmission of light by plasmon-polariton supporting surfaces is addressed. The important problems of subwavelength resolution are treated with discussions of applications in a number of scientific fields. The basic principles of near-field optical microscopy are presented with a number of important applications. The basics of atomic cavity physics, photonic entanglement and its relation to some of the basic properties of quantum computing, and the physics associated with the study of optical lattices are presented.

This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field. Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been improved for 20 years, and no new superconductors have been discovered for 5 years. This book will encourage researchers as well as graduate-course students not to give up on the challenges in the future of high- Tc superconductivity.