This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions.

In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.

A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

"FIB Nanostructures "reviews a range of methods, including milling, etching, deposition, and implantation, applied to manipulate structures at the nanoscale. Focused Ion Beam (FIB) is an important tool for manipulating the structure of materials at the nanoscale, and substantially extends the range of possible applications of nanofabrication. FIB techniques are widely used in the semiconductor industry and in materials research for deposition and ablation, including the fabrication of nanostructures such as nanowires, nanotubes, nanoneedles, graphene sheets, quantum dots, etc. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of FIB for nanostructures and related materials and devices, and to provide a comprehensive introduction to the field and directions for further research. Chapters written by leading scientists throughout the world create a fundamental bridge between focused ion beam and nanotechnology that is intended tostimulate readers' interest in developing new types of nanostructures for application to semiconductor technology. These applications are increasingly important for the future development of materials science, energy technology, and electronic devices. The book can be recommended for physics, electrical engineering, and materials science departments as a reference on materials science and device design."

While basic features of polarons were well recognized a long time ago and have been described in a number of review papers and textbooks, interest in the role of electron-phonon interactions and polaron dynamics in di?- ent materials has recently gone through a vigorous revival. Electron-phonon interactions have been shown to be relevant in many inorganic and organic semiconductors and polymers, colossal magnetoresistance oxides, and tra- port through nanowires and quantum dots also often depends on vibronic displacements of ions. These interactions presumably play a role in hi- temperature superconductors as well. The continued interest in polarons extends beyond the physical description of advanced materials. The ?eld has been a testing ground for analytical, semi-analytical, and numerical techniques, such as path integrals, strong-coupling perturbation expansion, advanced variational methods, exact diagonalization, Quantum Monte Carlo, and other techniques. This book reviews some recent developments in the ?eld of polarons, starting with the basics and covering a number of active directions of research. Single- and multipolaron theories have o?ered more insight into colossal magnetoresistance and in a broad spectrum of ph- ical properties of structures with reduced dimension and dimensionality such as transport, optical absorption, Raman scattering, photoluminescence, magneto-optics, etc. While nobody - at present - has a ?nal theory of hi- temperature superconductivity, we discuss one alternative (polaronic) route. We have bene?ted from discussions with many experts in the ?eld.

The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.

The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps at the nano-scale which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics. However, working at this reduced scale can bring second order effects that degrade efficiency and reliability. This book describes methods for the characterization, modelling, and simulation prediction of these second order effects in order to optimise performance, energy efficiency and new uses of nano-scaled semiconductor devices. The devices and materials covered include bulk MOSFETs, silicon-on-insulator FET devices, FinFET devices, tunneling FETs, nanowires, quantum dots, amorphous and SiGe alloys, photodetectors and micro-machined bolometers, and CMOS process-compatible silicon-in-package. The modeling and characterisation methods include computer-aided-design tools; classical, semi-classical, and quantum-semi-classical approaches; impact of technology process on device modeling; measurement and extraction of basic electrical parameters; parasitic effects and de-embedding under non-conventional bias conditions; lifetime and failure mechanisms; bias temperature instability; time-dependent breakdown mechanisms; and new approaches for device characterization including magneto-conductance and magneto-tunneling. Nano-Scaled Semiconductor Devices is essential reading for researchers and advanced students in academia, and industry working on electronic devices, nanotechnology and semiconductor characterization. The book also covers a review on applications with a high societal impact, such as; chain food production, smart and green urban environments, water decontamination, and energy efficiency, which may serve as a reference for governmental and environmental institutions working on green and sustainable world environment initiatives.

This thesis describes the construction of a rotatable spin-polarized electron source and its use in spin- and angle-resolved inverse photoemission to investigate the unoccupied electron states of Tl/Si(111)-(1x1) with special emphasis on their spin texture. Towards more efficient electronics - with the electron spin as information carrier: This motto is the motivation for numerous studies in solid state physics that deal with electron states whose spin degeneracy is lifted by spin-orbit interaction. This thesis addresses the spin-orbit-induced spin textures in momentum space in the surface electronic structure of a prototypical Rashba-type hybrid system: heavy metal thallium on semiconducting silicon. For Tl/Si(111)-(1x1), the thallium adlayer provides surface states with strong spin-orbit interaction and peculiar spin-orbit-induced spin textures: spin rotations and spin chirality in momentum space for unoccupied surface states with giant spin splittings. Almost completely out-of-plane spin-polarized valleys in the vicinity of the Fermi level are identified. As the valley polarization is oppositely oriented at specific points in momentum space, backscattering should be strongly suppressed in this system.

Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such quantum dots are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened.

This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world."

This book deals with all aspects of plasmonics, basics, applications and advanced developments. Plasmonics is an emerging field of research dedicated to the resonant interaction of light with metals. The light/matter interaction is strongly enhanced at a nanometer scale which sparks a keen interest of a wide scientific community and offers promising applications in pharmacology, solar energy, nanocircuitry or also light sources. The major breakthroughs of this field of research originate from the recent advances in nanotechnology, imaging and numerical modelling. The book is divided into three main parts: extended surface plasmons polaritons propagating on metallic surfaces, surface plasmons localized on metallic particles, imaging and nanofabrication techniques. The reader will find in the book: Principles and recent advances of plasmonics, a complete description of the physics of surface plasmons, a historical survey with emphasize on the emblematic topic of Wood's anomaly, an overview of modern applications of molecular plasmonics and an extensive description of imaging and fabrications techniques.

This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Technology computer-aided design, or TCAD, is critical to today's semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.

This book explores the relationship between electronic correlations, dimensionality, inhomogeneities, and superconductivity in low-dimensional systems by studying single crystals of the quasi-one-dimensional Na2- Mo6Se6, composed of MoSe filaments weakly coupled by Na atoms and subject to intrinsic disorder ( > 0). It shows that the Na2- Mo6Se6 displays strong electronic correlations in its normal state, whereas a superconducting ground state emerges from Anderson localized electrons. Two novel behaviors of the superconducting state are observed: first, a disorder induced enhancement of the superconducting transition temperature; second, a reentrant phase coherence with increasing temperature, magnetic field, and current. It also analyzes the intrinsic properties of Na2- Mo6Se6 are analyzed to offer a thorough understanding of these phenomena. The emergence of superconductivity in such low-dimensional systems provides a fruitful playground to explore electronic order and correlations.

Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics.
This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

This thesis combines quantum electrical engineering with electron spin resonance, with an emphasis on unraveling emerging collective spin phenomena. The presented experiments, with first demonstrations of the cavity protection effect, spectral hole burning and bistability in microwave photonics, cover new ground in the field of hybrid quantum systems. The thesis starts at a basic level, explaining the nature of collective effects in great detail. It develops the concept of Dicke states spin-by-spin, and introduces it to circuit quantum electrodynamics (QED), applying it to a strongly coupled hybrid quantum system studied in a broad regime of several different scenarios. It also provides experimental demonstrations including strong coupling, Rabi oscillations, nonlinear dynamics, the cavity protection effect, spectral hole burning, amplitude bistability and spin echo spectroscopy.

Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. "Semiconductor Technologies in the Era of Electronics" therefore does not aim to look deeper in certain areas but it offers a broad and comprehensive overview of the field to:

- Experts of specific knowledge who want to expand the overall understanding to different areas
- Persons who wish to understand the principle of electronic devices often seen in everyday life
- Entrepreneurs interested in the innovations and changes of semiconductor technologies and overall electronics industry

Aprofound and theoretical approach is therefore used and special cases essential to understanding these important concept are presented."

This book on pressure-induced phase transitions in AB2X4 chalcogenide compounds deals with one important AmBnXp material. The interest in these materials is caused by their properties. The results are discussed for three main groups of structural families: cubic-spinel structures, defective tetragonal structures, and other structures like layered and wurtzite-type modifications. A systematic analysis of the behavior of cubic (spinel), tetragonal (defect chalcopyrites and stannites) and other crystal modifications of AB2X4 compounds under hydrostatic pressure is performed. The behavior of AIIAl2S4, AIIGa2S4, AIIAl2Se4 and AIIGa2Se4 compounds with defective tetragonal structures, compounds with layered and wurtzite structures under hydrostatic pressure and the pressure dependence of the band gap, lattice parameters, interatomic distances, vibrational modes and pressure-induced phase transitions is discussed. Many of these compounds, except oxide spinels, undergo a pressure-induced phase transition towards the rocksalt-type structure. The phase transition is preceded by disorder in the cation sublattice. The dependence of the transition pressure to the rocksalt-type structure as a function of the compound ionicity and the size criterion is analyzed. At high pressures, all ordered-vacancy compounds are found to exhibit a band anticrossing between several conduction bands that leads to a strong decrease of its pressure coefficient and consequently to a strong non-linear pressure dependence of the direct bandgap energy. Theoretical studies of phase transitions in several ordered-vacancy compounds reveal that the existence of ordered vacancies alter the cation-anion bond distances and their compressibilities. The book is written for students, Ph D. students and specialists in materials science, phase transitions and new materials.

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Liquid Crystals LCs] are synthetic functional materials par excellence and are to be found in many types of LCDs; LCs self-assemble into ordered, but fluid, supramolecular structures and domains; they can be oriented in large homogeneous monodomains by electric and magnetic fields, Langmuir Blodgett techniques and also by self-orientation on suitable alignment layers; they are also anisotropic with preferred axes of light absorption, emission and charge transport with excellent semiconducting properties; they are soluble in organic solvents and can be deposited as uniform thin layers on device substrates, including plastic, by low-cost deposition processes, such as spin coating and doctor blade techniques; reactive mesogens polymerisable LC monomers] can be photopatterned and fixed in position and orientation as insoluble polymer networks. LCs are increasingly being used as active components in electronic and photonic organic devices, such as Organic Light-Emitting Diodes OLEDs], Organic Field Effect Transistors OFETs], Thin Film Transistors TFTs] and photovoltaic cells PVs]. Such devices on plastic substrates represent a major component of the plastic electronics revolution. The self-assembling properties and supramolecular structures of liquid crystals can be made use of in order to improve the performance of such devices. The relationships between chemical structure, liquid crystalline behaviour and other physical properties, such as charge-transport, photoluminescence and electroluminescence are discussed and explained. For example, high carrier-mobility, polarised emission and enhanced output-coupling are identified as the key advantages of nematic and smectic liquid crystals for electroluminescence. The advantageous use of anisotropic polymer networks formed by the polymerisation of reactive mesogens RMs] in devices with multilayer capability and photopatternability is described. The anisotropic transport and high carrier mobilities of columnar liquid crystals make them promising candidates for photovoltaics and transistors. The issues in the design and processing of liquid crystalline semiconductors for such devcies with improved performance are described. The photonic properties of chiral liquid crystals and their use as mirror-less lasers are also discussed.

This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal-semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.