This book presents the high-precision analysis of ground states and low-energy excitations in fractional quantum Hall states formed by Dirac electrons, which have attracted a great deal of attention. In particular the author focuses on the physics of fractional quantum Hall states in graphene on a hexagonal boron nitride substrate, which was recently implemented in experiments. The numerical approach employed in the book, which uses an exact numerical diagonalization of an effective model Hamiltonian on a Haldane's sphere based on pseudopotential representation of electron interaction, provides a better understanding of the recent experiments. The book reviews various aspects of quantum Hall effect: a brief history, recent experiments with graphene, and fundamental theories on integer and fractional Hall effects. It allows readers to quickly grasp the physics of quantum Hall states of Dirac fermions, and to catch up on latest research on the quantum Hall effect in graphene.

Polymer electronics is the science behind many important new developments in technology, such as the flexible electronic display (e-ink) and many new developments in transistor technology. Solar cells, light-emitting diodes, and transistors are all areas where plastic electronics is likely to, or is already having, a serious impact on our daily lives. With polymer transistors and light-emitting diodes now being commercialised, there is a clear need for a pedagogic text that discusses the subject in a clear and concise fashion suitable for senior undergraduate and graduate students. The content builds on what has been learnt in an elementary (core) course in solid state physics and electronic behaviour, but care has been taken to ensure that important aspects such as the synthesis of these polymers are not overlooked. The chemistry is treated in a manner appropriate to students of physics. Polymer Electronics presents a thorough discussion of the physics and chemistry behind this new and important area of science, appealing to all physical scientists with an interest in the field.

This book provides an introduction to quantum cascade lasers, including the basic underlying models used to describe the device. It aims at giving a synthetic view of the topic including the aspects of the physics, the technology, and the use of the device. It should also provide a guide for the application engineer to use this device in systems. The book is based on lecture notes of a class given for Masters and beginning PhD students. The idea is to provide an introduction to the new and exciting developments that intersubband transitions have brought to the use of the mid-infrared and terahertz region of the electromagnetic spectrum. The book provides an introductory part to each topic so that it can be used in a self-contained way, while references to the literature will allow deeper studies for further research.

In recent decades, the way human beings interact with technology has been significantly transformed. In our daily life, ever fewer manually controlled devices are used, giving way to automatized houses, cars, and devices. A significant part of this technological revolution relies on signal detection and evaluation, placing detectors as core devices for further technological developments. This book introduces a versatile contribution to achieving light sensing: Organic Semiconductor Devices for Light Detection. The text is organized to guide the reader through the main concepts of light detection, followed by a introduction to the semiconducting properties of organic molecular solids. The sources of non-idealities in organic photodetectors are presented in chapter 5, and a new device concept, which aims to overcome some of the limitation discussed in the previous chapters, is demonstrated. Finally, an overview of the field is given with a selection of open points for future investigation.

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on "Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment" held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

This book first provides readers with an introduction to the underlying physics and state-of-the-art application of photon counting detectors for X-ray imaging. The authors explain that a photon-counting imaging detector can realize quantitative analysis because the detector can derive X-ray attenuation information based on the analysis of intensity changes of individual X-ray. To realize this analysis, it is important to consider the physics of an object and detector material. In this book, the authors introduce a novel analytical procedure to create quantitative X-ray images for medical diagnosis.

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors

"The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today

"Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors I know of no better text I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics

Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters."

Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction.

Effects of many-body interactions and superconducting correlations have become central questions in the quantum transport community. While most previous works investigating current fluctuations in nanodevices have been restricted to the stationary regime, Seoane's thesis extends these studies to the time domain. It provides relevant information about the time onset of electronic correlations mediated by interactions and superconductivity. This knowledge is essential for the development of fast electronic devices, as well as novel applications requiring fast manipulations, such as quantum information processing. In addition, the thesis establishes contact with issues of broad current interest such as non-equilibrium quantum phase transitions.

This book presents the basics of superconductivity and applications of superconducting magnets. It explains the phenomenon of superconductivity, describes theories of superconductivity, and discusses type II and high-temperature cuprate superconductors. The main focus of the book is the application of superconducting magnets in accelerators, fusion reactors and other advanced applications such as nuclear magnetic resonance (NMR), magnetic resonance imaging (MRI), high-gradient magnetic separation (HGMS), and superconducting magnetic energy storage (SMES). This new and significantly extended second edition covers the state of the art in the development of novel superconductors for advanced magnet applications, as well as the production of practical superconducting wires, tapes, and ultra high current cables used for high-field magnets. It includes two new chapters each devoted to MgB2 and Fe-based superconductors, and discusses the recently developed and world record-setting 45.5-Tesla magnetic field generated by a combination of conventional and high-temperature cuprate superconducting magnets. In addition, it discusses the status and outlook of all current and future nuclear fusion reactors worldwide. The chapter on accelerators includes the ongoing efforts to build high luminosity LHC (HL-LHC), the high-energy 28 TeV LHC (HE-LHC), the future circular collider (FCC) at CERN, and the just launched electro-ion collider (EIC) at Brookhaven National Laboratory. The book is based on the long-standing experience of the author in studying superconducting materials, building magnets and delivering numerous lectures to research scholars and students. The book provides comprehensive and fundamental knowledge in the field of applied superconductivity, greatly benefiting researchers and graduate students wishing to learn more about the various aspects of superconductivity and advanced magnet applications.

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schroedinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic materials). Thus the book is also useful for experts working in physics, chemistry, and related engineering and industrial fields.

This book offers an overview of power electronic applications in the study of power integrated circuit (IC) design, collecting novel research ideas and insights into fast transient response to prevent the output voltage from dropping significantly at the undershoot. It also discusses techniques and training to save energy and increase load efficiency, as well as fast transient response and high efficiency, which are the most important factors for consumer products that implement power IC. Lastly, the book focuses on power electronics for system loop analysis and optimal compensation design to help users and engineers implement their applications. The book is a valuable resource for university researchers, power IC R&D engineers, application engineers and graduate students in power electronics who wish to learn about the power IC design principles, methods, system behavior, and applications in consumer products.

This accessible textbook offers a novel, concept-led approach to superconducting electronics, using the COMSOL Multiphysics software to help describe fundamental principles in an intuitive manner. Based on a course taught by the author and aimed primarily at engineering students, the book explains concepts effectively and efficiently, uncovering the "shortcut" to understanding each topic, enabling readers to quickly grasp the underlying essence. The book is divided into two main parts; the first part provides a general introduction to key topics encountered in superconductivity, illustrated using COMSOL simulations based on time-dependent Ginzburg-Landau equations and avoiding any deeply mathematical derivations. It includes numerous worked examples and problem sets with tips and solutions. The second part of the book is more conventional in nature, providing detailed derivations of the basic equations from first principles. This part covers more advanced topics, including the BCS-Gor'kov-Eliashberg approach to equilibrium properties of superconductors, the derivation of kinetic equations for nonequilibrium superconductors, and the derivation of time-dependent Ginzburg-Landau equations, used as the basis for COMSOL modeling in the first part. Supported throughout by an extensive library of COMSOL Multiphysics animations, the book serves as a uniquely accessible introduction to the field for engineers and others with a less rigorous background in physics and mathematics. However, it also features more detailed mathematical background for those wishing to delve further into the subject.

This book deals with mathematical modeling, namely, it describes the mathematical model of heat transfer in a silicon cathode of small (nano) dimensions with the possibility of partial melting taken into account. This mathematical model is based on the phase field system, i.e., on a contemporary generalization of Stefan-type free boundary problems. The approach used is not purely mathematical but is based on the understanding of the solution structure (construction and study of asymptotic solutions) and computer calculations. The book presents an algorithm for numerical solution of the equations of the mathematical model including its parallel implementation. The results of numerical simulation concludes the book. The book is intended for specialists in the field of heat transfer and field emission processes and can be useful for senior students and postgraduates.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.

The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.

Provides a comprehensive global picture of the semiconductor world

Each of the work's three sections presents a complete description of one aspect of the whole

Written and Edited by a truly international team of experts

This book provides an up-to-date introduction to the field of functional thin films and materials, encompassing newly developed technologies and fundamental new concepts. The focus is on the critical areas of novel thin films such as sol gel synthesis of membrane, ferroelectric thin films and devices, functional nanostructured thin films, micromechanical analysis of fiber-reinforced composites, and novel applications. An important aspect of the book lies in its wide coverage of practical applications. It introduces not only the cutting-edge technologies in modern industry, but also unique applications in many rapidly advancing fields. This book is written for a wide readership including university students and researchers from diverse backgrounds such as physics, materials science, engineering and chemistry. Both undergraduate and graduate students will find it a valuable reference book on key topics related to solid state and materials science.

Explore the intersection of computer science, physics, and electrical and computer engineering with this discussion of the engineering of quantum computers In Principles of Superconducting Quantum Computers, a pair of distinguished researchers delivers a comprehensive and insightful discussion of the building of quantum computing hardware and systems. Bridging the gaps between computer science, physics, and electrical and computer engineering, the book focuses on the engineering topics of devices, circuits, control, and error correction. Using data from actual quantum computers, the authors illustrate critical concepts from quantum computing. Questions and problems at the end of each chapter assist students with learning and retention, while the text offers descriptions of fundamentals concepts ranging from the physics of gates to quantum error correction techniques. The authors provide efficient implementations of classical computations, and the book comes complete with a solutions manual and demonstrations of many of the concepts discussed within. It also includes: A thorough introduction to qubits, gates, and circuits, including unitary transformations, single qubit gates, and controlled (two qubit) gates Comprehensive explorations of the physics of single qubit gates, including the requirements for a quantum computer, rotations, two-state systems, and Rabi oscillations Practical discussions of the physics of two qubit gates, including tunable qubits, SWAP gates, controlled-NOT gates, and fixed frequency qubits In-depth examinations of superconducting quantum computer systems, including the need for cryogenic temperatures, transmission lines, S parameters, and more Ideal for senior-level undergraduate and graduate students in electrical and computer engineering programs, Principles of Superconducting Quantum Computers also deserves a place in the libraries of practicing engineers seeking a better understanding of quantum computer systems.

This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Rapid development of microfabrication and assembly of nanostructures has opened up many opportunities to miniaturize structures that confine light, producing unusual and extremely interesting optical properties. Microcavities addresses the large variety of optical phenomena taking place in confined solid state structures: microcavities. Realisations include planar and pillar microcavities, whispering gallery modes, and photonic crystals. The microcavities represent a unique laboratory for quantum optics and photonics. They exhibit a number of beautiful effects including lasing, superfluidity, superradiance, entanglement etc.
Written by four practitioners strongly involved in experiments and theories of microcavities, it is addressed to any interested reader having a general physical background, but in particular to undergraduate and graduate students at physics faculties.

The 2001 Dutch Sensor Conference held on 14 -15 May 2001, at the University of Twente in Enschede, The Netherlands, is the fourth in a series ofmeetings. The conference is initiated by the Dutch Technology Foundation (STW) in order to stimulate the industrial application ofsensor research. This MESA Monograph contains a collection oflatest research and development from all major Dutch centers ofsensor research and aspect ofsensor commercialization. Thus it provides an excellent overview ofthe state ofthe art ofDutch Sensor Technology in the new millennium. I should like to acknowledge the work ofthe program committee, the local organizing committee and, ofcourse, the contributors to this volume. All ofthem made the conference a success. Prof. Dr. Miko Elwenspoek Conference Chairman Program Committee: M. Elwenspoek (Chairman) (MESA+) A.van den Berg (MESA+) PJ. French (TV Delft) P.V. Lambeck (MESA+) H. Leeuwis (3T) J.c. Lotters (Bronkhorst) HAC. Tilmans (IMEC) Contents MEASUREMENT SYSTEM FOR BIOCHEMICAL ANALYSIS BASED 1 ON CAPILLARY ELECTROPHORESIS AND MICROSCALE CONDUCTIVITY DETECTION F. Laugere, A. Berthold, R.M Guijt, E. Baltussen, J. Bastemeijer, P.M Sarro, MJ. Vellekoop ELECTRO-OSMOTIC FLOW CONTROL IN MICROFLUIDICS 7 SYSTEMS R.E. Oosterbroek, MH. Goedbloed, A. Trautmann, N.J. van der Veen, S Schlautmann, 1.W Berenschot, A. van den Berg FLOW SENSING USING THE TEMPERATURE DISTRIBUTION 13 ALONG A HEATED MICROBEAM J.J. van Baar, RJ Wiegerink, GJM Krijnen, T.SJ. Lammerink, M.

Thin-Film Capacitors for Packaged Electronics deals with the capacitors of a wanted kind, still needed and capable of keeping pace with the demands posed by ever greater levels of integration. It spans a wide range of topics, from materials properties to limits of what's the best one can achieve in capacitor properties to process modeling to application examples. Some of the topics covered are the following:
-Novel insights into fundamental relationships between dielectric constant and the breakdown field of materials and related capacitance density and breakdown voltage of capacitor structures,
-Electrical characterization techniques for a wide range of frequencies (1 kHz to 20 GHz),
-Process modeling to determine stable operating points,
-Prevention of metal (Cu) diffusion into the dielectric,
-Measurements and modeling of the dielectric micro-roughness.