In 1987 a major breakthrough occurred in materials science. A new family of materials was discovered that became superconducting above the temperature at which nitrogen gas liquifies, namely, 77 K or -196 DegreesC. Within months of the discovery, a wide variety of experimental techniques were brought to bear in order to measure the properties of these materials and to gain an understanding of why they superconduct at such high temperatures. Among the techniques used were electromagnetic absorption in both the normal and the superconducting states. The measurements enabled the determination of a wide variety of properties, and in some instances led to the observation of new effects not seen by other measu- ments, such as the existence of weak-link microwave absorption at low dc magnetic fields. The number of different properties and the degree of detail that can be obtained from magnetic field- and temperature-dependent studies of electromagnetic abso- tion are not widely appreciated. For example, these measurements can provide information on the band gap, critical fields, the H-T irreversibility line, the amount of trapped flux, and even information about the symmetry of the wave function of the Cooper pairs. It is possible to use low dc magnetic field-induced absorption of microwaves with derivative detection to verify the presence of superconductivity in a matter of minutes, and the measurements are often more straightforward than others. For example, they do not require the physical contact with the sample that is necessary when using four-probe resistivity to detect superconductivity.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This text presents papers given at a discussion meeting of The Royal Society, held in July 1992, concerning thin film diamond. Traditionally, commercial diamond synthesis was almost entirely by the high-pressure, high-temperature technique, but in recent years, low-pressure diamond synthesis has attracted world-wide interest due to the possible use of diamond films in commercial applications. These papers review these low-pressure diamond synthesis techniques. An historical overview of the low-pressure growth techniques and a description of diamond and crystal morphology is given, followed by a discussion of the kinetics and gas phase chemistry involved in thin film growth. Peter Bachmann presents a review of the current deposition techniques, and summarizes the results of various deposition conditions to show that diamond growth is only possible in a narrow range of gas compositions. Other chapters discuss the electronic, optical, thermal and mechanical properties of thin diamond films as well as the electronic structure, deposition techniques and applications of diamond-like carbon (DLC) films. The final chapter discusses the various thermal and optical infra-red and X-ray applications of diamond thin films. Researchers in materials, physics and mechanical engineering should find this text a timely review of a rapidly advancing field, and it should provide practising engineers in the electronic and manufacturing industries with a useful overview of the field.

Reviewing the development of optical fibre lasers and amplifiers over the past few years, this book is a compilation of chapters written by several contributors. Chapter 1 presents an overview and an historical introduction to the field. Chapter 2 is theoretical and introduces the concepts of energy levels and of lasing. Chapter 3 then discusses the fabrication of rare-earth doped optical fibres whilst chapter 4 covers the spectroscopy of rare-earth dopants in these fibres. Chapter 5 emphasizes the practical aspects of the laser amplifier. Chapter 6 moves on to the operation of erbium amplifiers in optical systems and a comparison is made here with other alternatives amplifying devices. Chapter 7 reviews work on fibre laser oscillators made in silica fibre, while chapter 8 covers similar work using fluoride glass fibres, an alternative glass host. Chapter 9 describes Q-switching and mode-locking in fibre lasers, and finally chapter 10 examines future prospects for these devices and discusses potential developments such as distributed fibre amplifiers, soliton propagation and the general use of fibre lasers in optical sensors.

Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also for graduate and postgraduate students and all those who would like to get acquaintained with this vivid area of the materials science.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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This book presents written versions of selected invited lectures from the spring meeting of the Arbeitskreis Festkorperphysik of the Deutsche Physikalische Gesellschaft which was held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given at the numerous symposia are included. Most of these were organized collaboratively by several of the divisions of the Arbeitskreis. The book presents, to some extent, the status of the field of solid-state physics in 2006 not only in Germany but also internationally.

The book develops a comprehensive understanding of the surface impedance of the oxide high-temperature superconductors in comparison with the conventional superconductor Nb3Sn. Linear and nonlinear microwave responses are treated separately, both in terms of models, theories or numerical approaches and in terms of experimental results. The theoretical treatment connects fundamental aspects of superconductivity to the specific high-frequency properties. The experimental data review the state of the art, as reported by many international groups. The book describes further the main features of appropriate preparation, handling, mounting, and refrigeration techniques, and finally discusses possible applications in passive and active microwave devices.

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;- wear-out and breakdown of thin gate-oxides;- the impact of processing equipment on damage;- methods of damage measurement;- damage management; - gate-oxide scaling.

Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy.

This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the processing and properties of organic thin films, devices, and coatings for clean energy applications. Topics covered include:

• Thin-film solar cells based on the use of polycrystalline thin-film materials
• Anodized titania nanotube array and its application in dye-sensitized solar cells
• Progress and challenges associated with photovoltaic applications of silicon nanocrystalline materials
• Semiconductive nanocomposite films for clean environment
• Thin-coating technologies and applications in high-temperature solid oxide fuel cells
• Nanoscale organic molecular thin films for information memory applications

A complete resource, this handbook provides the detailed explanations that newcomers need, as well as the latest cutting-edge research and data for experts. Covering a wide range of mechanical and functional technologies, including those used in clean energy, these books also feature figures, tables, and images that will aid research and help professionals acquire and maintain a solid grasp of this burgeoning field.

The Handbook of Nanostructured Thin Films and Coatings is composed of this volume and two others:

Nanostructured Thin Films and Coatings, Functional Properties

Nanostructured Thin Films and Coatings, Mechanical Properties

An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions cover the latest research on a wide range of topics. In particular they include novel experimental techniques for studying and characterizing nanostructure materials. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones. It starts from the basic theory modeling many-body physics in Fe-superconductors and other multi-orbital materials and reaches up to the magnetic and Cooper pair fluctuations and nematic order. Finally, it offers a comprehensive overview of the most recent advancements in the experimental investigations of iron based superconductors.

This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

This book will present the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronc semiconductor devices. The book chapters will be authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. The book will cover ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, and GaN/AlGaN GaAlN/AlGaInN and other nitride, and SiC hetero-structures; graded structures for distributed piezo-electric charge, electrical and electronic characterization of polarization charge and charge distribution by scanning-probe spectroscopies, gauge factors and strain effects.It also covers: polarization in extended defects and device effects; Piezo-electric strain/charge engineering and application to device design and processing: ohmic, and Shottky diodes, drift, diffusion, low and high field carrier dynamics in plane and normal to thin film and polarization engineered semiconductor hetero-structures. Polarization inclusion and utilization in design of sensors, microwave, low noise, and optoelectronic devices (HEMT, HBT, LED, Laser acoustic, chemical, optical and biological sensors) is also covered.

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. "Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems" reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.

Topological defects are generic in continuous media. In the relativistic quantum vacuum they are known as cosmic strings, in superconductors as quantized flux lines, and in superfluids, low-density atomic Bose-Einstein condensates and neutron stars as quantized vortex lines. This collection of articles by leading scientists presents a modern treatment of the physics of vortex matter, mainly applied to unconventional superconductors and superfluids but with extensions to other areas of physics.

This book discusses topics related to power electronics, especially electromagnetic transient analysis and control of high-power electronics conversion. It focuses on the re-evaluation of power electronics, transient analysis and modeling, device-based system-safe operating area, and energy balance-based control methods, and presenting, for the first time, numerous experimental results for the transient process of various real-world converters. The book systematically presents both theoretical analysis and practical applications. The first chapter discusses the structure and attributes of power electronics systems, highlighting the analysis and synthesis, while the second chapter explores the transient process and modeling for power electronics systems. The transient features of power devices at switching-on/off, transient conversion circuit with stray parameters and device-based system-safe operating area are described in the subsequent three chapters. The book also examines the measurement of transient processes, electromagnetic pulses and their series, as well as high-performance, closed-loop control, and expounds the basic principles and method of the energy-balanced control strategy. Lastly, it introduces the applications of transient analysis of typical power electronics systems. The book is valuable as a textbook for college students, and as a reference resource for electrical engineers as well as anyone working in the field of high-power electronics system.