Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.

This book is concerned with wafer fabrication and the factories that manufacture microprocessors and other integrated circuits. With the invention of the transistor in 1947, the world as we knew it changed. The transistor led to the microprocessor, and the microprocessor, the guts of the modern computer, has created an epoch of virtually unlimited information processing. The electronics and computer revolution has brought about, for better or worse, a new way of life. This revolution could not have occurred without wafer fabrication, and its associated processing technologies. A microprocessor is fabricated via a lengthy, highly-complex sequence of chemical processes. The success of modern chip manufacturing is a miracle of technology and a tribute to the hundreds of engineers who have contributed to its development. This book will delineate the magnitude of the accomplishment, and present methods to analyze and predict the performance of the factories that make the chips. The set of topics covered juxtaposes several disciplines of engineering. A primary subject is the chemical engineering aspects of the electronics industry, an industry typically thought to be strictly an electrical engineer's playground. The book also delves into issues of manufacturing, operations performance, economics, and the dynamics of material movement, topics often considered the domain of industrial engineering and operations research. Hopefully, we have provided in this work a comprehensive treatment of both the technology and the factories of wafer fabrication. Novel features of these factories include long process flows and a dominance of processing over operational issues.

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interfacea "induced gap states (IFIGS) as a unifying theme, MAnch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Paulinga (TM)s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with external photodiodes. Continuous-mode and burst-mode receivers are compared. The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. In order to cover the topic comprehensively, detailed descriptions of receivers for optical data communication in general and, in particular, optical burst-mode receivers in deep-sub-um CMOS are presented. Numerous detailed and elaborate illustrations facilitate better understanding. "

Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology provides a comprehensive overview of materials for application in thin film solar cells. It is the first book that compares experimental and computer-modeling methods, combining the state of the art in technology with the latest insights in device modeling. A wide range of experimental issues are explored, from materials and basic device physics of thin film solar cells to potential mass production facilities for solar panels. The modeling section presents an approach to integrated optical and electrical modeling of complete devices, including optical light trapping, and describes the physical materials parameters related to amorphous silicon that are crucial for successful modeling. The increasing importance of multijunction cells with different bandgap components for thin film silicon cells is reflected in a description of the latest breakthroughs acquired experimentally and by modeling. Concluding chapters describe what can be learned from combined modeling and device fabrication, indicating potential future methods of amorphous silicon solar cell optimization. This book will prove invaluable to researchers in the amorphous and microcrystalline silicon field and the physical and experimental approaches will be of interest to researchers investigating solar cells or other film devices for large area applications.

What kind of information on the electrons' organisation in solids is yielded by measuring their thermoelectric response? Fundamentals of Thermoelectricity gives an account of our current understanding of thermoelectric phenomena in solids by presenting basic theoretical concepts and numerous experimental results. Many readers will be surprised to learn that even in the case of simple metals (considered to be domesticated long ago by the quantum theory of solids) our understanding lags far behind known experimental facts. The two theories of phonon drag, the positive Seebeck coefficient of noble metals, and the three-orders-of-magnitude gap between theory and experiment regarding the thermoelectric response of Bogoliubov quasi-particles of a superconductor are among the forgotten puzzles discussed in this book. Among other novelties, it contains an original discussion of the role of the de Broglie thermal wave-length in setting the magnitude of the thermoelectric response in Fermi liquids.

This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.

The quantum Hall effects remains one of the most important subjects to have emerged in condensed matter physics over the past 20 years. The fractional quantum Hall effect, in particular, has opened up a new paradigm in the study of strongly correlated electrons, and it has been shown that new concepts, such as fractional statistics, anyon, chiral Luttinger liquid and composite particles, are realized in two-dimensional electron systems. This book explains the quantum Hall effects together with these new concepts starting from elementary quantum mechanics. Thus, graduate students can use this book to gain an overall understanding of these phenomena.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

This book presents a theoretical study of the generation and conversion of phonon angular momentum in crystals. Recently, rotational motions of lattice vibrations, i.e., phonons, in crystals attract considerable attentions. As such, the book theoretically demonstrate generations of phonons with rotational motions, based on model calculations and first-principle calculations. In systems without inversion symmetry, the phonon angular momentum is shown to be caused by the temperature gradient, which is demonstrated in crystals such as wurtzite gallium nitride, tellurium, and selenium using the first-principle calculations. In systems with neither time-reversal nor inversion symmetries, the phonon angular momentum is shown to be generated by an electric field. Secondly, the book presents the microscopic mechanisms developed by the author and his collaborator on how these microscopic rotations of nuclei are coupled with electron spins. These predictions serve as building blocks for spintronics with phonons or mechanical motions.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

'Superconducting State' provides a very detailed theoretical treatment of the key mechanisms of superconductivity, including the current state of the art (phonons, magnons, and plasmons). A very complete description is given of the electron-phonon mechanism responsible for superconductivity in the majority of superconducting systems, and the history of its development, as well as a detailed description of the key experimental techniques used to study the superconducting state and determine the mechanisms. In addition, there are chapters describing the discovery and properties of the key superconducting compounds that are of the most interest for science, and applications including a special chapter on the cuprate superconductors. It provides detailed treatments of some very novel aspects of superconductivity, including multiple bands (gaps), the "pseudogap" state, novel isotope effects beyond BCS, and induced superconductivity.

This book outlines various synthetic approaches, tuneable physical properties, and device applications of core/shell quantum dots (QDs). Core/shell QDs have exhibited enhanced quantum yield (QY), suppressed photobleaching/blinking, and significantly improved photochemical/physical stability as compared to conventional bare QDs. The core-shell structure also promotes the easy tuning of QDs' band structure, leading to their employment as attractive building blocks in various optoelectronic devices. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of core/shell QDs and relevant devices, and to provide a comprehensive introduction and directions for further research in this growing area of nanomaterials research.

This volume contains the papers presented at the International Workshop on the Cur rent Problems in Condensed Matter: Theory and Experiment, held at Cocoyoc, More los, Mexico, during January 5-9, 1997. The participants had come from Argentina, Austria, Chile, England, France, Germany, Italy, Japan, Mexico, Switzerland, and the USA. The presentations at the Workshop provided state-of-art reviews of many of the most important problems, currently under study, in condensed matter. Equally important to all the participants in the workshop was the fact that we had come to honor a friend, Karl Heinz Bennemann, on his sixty-fifth birthday. This Festschrift is just a small measure of recognition of the intellectualleadership of Professor Bennemann in the field and equally important, as a sincere tribute to his qualities as an exceptional friend, college and mentor. Those who have had the privilege to work closely with Karl have been deeply touched by Karl's inquisitive scientific mind as well as by bis kindness and generosity."

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.

This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style that graduate students will find very attractive. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology. One of the problems encountered in high-power transistors is the excessive production of phonons and the first new chapter examines the hot-phonon phenomenon and the lifetime of polar optical phonons in the nitrides. In the burgeoning field of spintronics a crucial parameter is the lifetime of a spin-polarised electron gas, and this is treated in detail in the second of the new chapters. The third new chapter moves from the treatment of bulk properties to the unavoidable effects of the spatial limitation of the semiconductor, and to the influence of surface states and the pinning of the Fermi level. As with previous editions the text restricts its attention to bulk semiconductors. The account progresses from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities. Besides being a useful reference for workers in the field, this book will be a valuable text for graduate courses.

This book presents the high-precision analysis of ground states and low-energy excitations in fractional quantum Hall states formed by Dirac electrons, which have attracted a great deal of attention. In particular the author focuses on the physics of fractional quantum Hall states in graphene on a hexagonal boron nitride substrate, which was recently implemented in experiments. The numerical approach employed in the book, which uses an exact numerical diagonalization of an effective model Hamiltonian on a Haldane's sphere based on pseudopotential representation of electron interaction, provides a better understanding of the recent experiments. The book reviews various aspects of quantum Hall effect: a brief history, recent experiments with graphene, and fundamental theories on integer and fractional Hall effects. It allows readers to quickly grasp the physics of quantum Hall states of Dirac fermions, and to catch up on latest research on the quantum Hall effect in graphene.

Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction.

In recent decades, the way human beings interact with technology has been significantly transformed. In our daily life, ever fewer manually controlled devices are used, giving way to automatized houses, cars, and devices. A significant part of this technological revolution relies on signal detection and evaluation, placing detectors as core devices for further technological developments. This book introduces a versatile contribution to achieving light sensing: Organic Semiconductor Devices for Light Detection. The text is organized to guide the reader through the main concepts of light detection, followed by a introduction to the semiconducting properties of organic molecular solids. The sources of non-idealities in organic photodetectors are presented in chapter 5, and a new device concept, which aims to overcome some of the limitation discussed in the previous chapters, is demonstrated. Finally, an overview of the field is given with a selection of open points for future investigation.

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors

"The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today

"Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors I know of no better text I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics

Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters."

Polymer electronics is the science behind many important new developments in technology, such as the flexible electronic display (e-ink) and many new developments in transistor technology. Solar cells, light-emitting diodes, and transistors are all areas where plastic electronics is likely to, or is already having, a serious impact on our daily lives. With polymer transistors and light-emitting diodes now being commercialised, there is a clear need for a pedagogic text that discusses the subject in a clear and concise fashion suitable for senior undergraduate and graduate students. The content builds on what has been learnt in an elementary (core) course in solid state physics and electronic behaviour, but care has been taken to ensure that important aspects such as the synthesis of these polymers are not overlooked. The chemistry is treated in a manner appropriate to students of physics. Polymer Electronics presents a thorough discussion of the physics and chemistry behind this new and important area of science, appealing to all physical scientists with an interest in the field.

This book provides an introduction to quantum cascade lasers, including the basic underlying models used to describe the device. It aims at giving a synthetic view of the topic including the aspects of the physics, the technology, and the use of the device. It should also provide a guide for the application engineer to use this device in systems. The book is based on lecture notes of a class given for Masters and beginning PhD students. The idea is to provide an introduction to the new and exciting developments that intersubband transitions have brought to the use of the mid-infrared and terahertz region of the electromagnetic spectrum. The book provides an introductory part to each topic so that it can be used in a self-contained way, while references to the literature will allow deeper studies for further research.