Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

Solid-State Imaging with Charge-Coupled Devices covers the complete imaging chain: from the CCD's fundamentals to the applications. The book is divided into four main parts: the first deals with the basics of the charge-coupled devices in general. The second explains the imaging concepts in close relation to the classical television application. Part three goes into detail on new developments in the solid-state imaging world (light sensitivity, noise, device architectures), and part four rounds off the discussion with a variety of applications and the imager technology. The book is a reference work intended for all who deal with one or more aspects of solid- state imaging: the educational, scientific and industrial world. Graduates, undergraduates, engineers and technicians interested in the physics of solid-state imagers will find the answers to their imaging questions. Since each chapter concludes with a short section Worth Memorizing', reading this short summary allows readers to continue their reading without missing the main message from the previous section.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas."

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

In 1987 a major breakthrough occurred in materials science. A new family of materials was discovered that became superconducting above the temperature at which nitrogen gas liquifies, namely, 77 K or -196 DegreesC. Within months of the discovery, a wide variety of experimental techniques were brought to bear in order to measure the properties of these materials and to gain an understanding of why they superconduct at such high temperatures. Among the techniques used were electromagnetic absorption in both the normal and the superconducting states. The measurements enabled the determination of a wide variety of properties, and in some instances led to the observation of new effects not seen by other measu- ments, such as the existence of weak-link microwave absorption at low dc magnetic fields. The number of different properties and the degree of detail that can be obtained from magnetic field- and temperature-dependent studies of electromagnetic abso- tion are not widely appreciated. For example, these measurements can provide information on the band gap, critical fields, the H-T irreversibility line, the amount of trapped flux, and even information about the symmetry of the wave function of the Cooper pairs. It is possible to use low dc magnetic field-induced absorption of microwaves with derivative detection to verify the presence of superconductivity in a matter of minutes, and the measurements are often more straightforward than others. For example, they do not require the physical contact with the sample that is necessary when using four-probe resistivity to detect superconductivity.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This text presents papers given at a discussion meeting of The Royal Society, held in July 1992, concerning thin film diamond. Traditionally, commercial diamond synthesis was almost entirely by the high-pressure, high-temperature technique, but in recent years, low-pressure diamond synthesis has attracted world-wide interest due to the possible use of diamond films in commercial applications. These papers review these low-pressure diamond synthesis techniques. An historical overview of the low-pressure growth techniques and a description of diamond and crystal morphology is given, followed by a discussion of the kinetics and gas phase chemistry involved in thin film growth. Peter Bachmann presents a review of the current deposition techniques, and summarizes the results of various deposition conditions to show that diamond growth is only possible in a narrow range of gas compositions. Other chapters discuss the electronic, optical, thermal and mechanical properties of thin diamond films as well as the electronic structure, deposition techniques and applications of diamond-like carbon (DLC) films. The final chapter discusses the various thermal and optical infra-red and X-ray applications of diamond thin films. Researchers in materials, physics and mechanical engineering should find this text a timely review of a rapidly advancing field, and it should provide practising engineers in the electronic and manufacturing industries with a useful overview of the field.

This book presents written versions of selected invited lectures from the spring meeting of the Arbeitskreis Festkorperphysik of the Deutsche Physikalische Gesellschaft which was held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given at the numerous symposia are included. Most of these were organized collaboratively by several of the divisions of the Arbeitskreis. The book presents, to some extent, the status of the field of solid-state physics in 2006 not only in Germany but also internationally.

Reviewing the development of optical fibre lasers and amplifiers over the past few years, this book is a compilation of chapters written by several contributors. Chapter 1 presents an overview and an historical introduction to the field. Chapter 2 is theoretical and introduces the concepts of energy levels and of lasing. Chapter 3 then discusses the fabrication of rare-earth doped optical fibres whilst chapter 4 covers the spectroscopy of rare-earth dopants in these fibres. Chapter 5 emphasizes the practical aspects of the laser amplifier. Chapter 6 moves on to the operation of erbium amplifiers in optical systems and a comparison is made here with other alternatives amplifying devices. Chapter 7 reviews work on fibre laser oscillators made in silica fibre, while chapter 8 covers similar work using fluoride glass fibres, an alternative glass host. Chapter 9 describes Q-switching and mode-locking in fibre lasers, and finally chapter 10 examines future prospects for these devices and discusses potential developments such as distributed fibre amplifiers, soliton propagation and the general use of fibre lasers in optical sensors.

Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also for graduate and postgraduate students and all those who would like to get acquaintained with this vivid area of the materials science.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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The book develops a comprehensive understanding of the surface impedance of the oxide high-temperature superconductors in comparison with the conventional superconductor Nb3Sn. Linear and nonlinear microwave responses are treated separately, both in terms of models, theories or numerical approaches and in terms of experimental results. The theoretical treatment connects fundamental aspects of superconductivity to the specific high-frequency properties. The experimental data review the state of the art, as reported by many international groups. The book describes further the main features of appropriate preparation, handling, mounting, and refrigeration techniques, and finally discusses possible applications in passive and active microwave devices.

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;- wear-out and breakdown of thin gate-oxides;- the impact of processing equipment on damage;- methods of damage measurement;- damage management; - gate-oxide scaling.

Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy.

This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the processing and properties of organic thin films, devices, and coatings for clean energy applications. Topics covered include:

• Thin-film solar cells based on the use of polycrystalline thin-film materials
• Anodized titania nanotube array and its application in dye-sensitized solar cells
• Progress and challenges associated with photovoltaic applications of silicon nanocrystalline materials
• Semiconductive nanocomposite films for clean environment
• Thin-coating technologies and applications in high-temperature solid oxide fuel cells
• Nanoscale organic molecular thin films for information memory applications

A complete resource, this handbook provides the detailed explanations that newcomers need, as well as the latest cutting-edge research and data for experts. Covering a wide range of mechanical and functional technologies, including those used in clean energy, these books also feature figures, tables, and images that will aid research and help professionals acquire and maintain a solid grasp of this burgeoning field.

The Handbook of Nanostructured Thin Films and Coatings is composed of this volume and two others:

Nanostructured Thin Films and Coatings, Functional Properties

Nanostructured Thin Films and Coatings, Mechanical Properties

An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions cover the latest research on a wide range of topics. In particular they include novel experimental techniques for studying and characterizing nanostructure materials. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones. It starts from the basic theory modeling many-body physics in Fe-superconductors and other multi-orbital materials and reaches up to the magnetic and Cooper pair fluctuations and nematic order. Finally, it offers a comprehensive overview of the most recent advancements in the experimental investigations of iron based superconductors.

This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

This book will present the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronc semiconductor devices. The book chapters will be authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. The book will cover ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, and GaN/AlGaN GaAlN/AlGaInN and other nitride, and SiC hetero-structures; graded structures for distributed piezo-electric charge, electrical and electronic characterization of polarization charge and charge distribution by scanning-probe spectroscopies, gauge factors and strain effects.It also covers: polarization in extended defects and device effects; Piezo-electric strain/charge engineering and application to device design and processing: ohmic, and Shottky diodes, drift, diffusion, low and high field carrier dynamics in plane and normal to thin film and polarization engineered semiconductor hetero-structures. Polarization inclusion and utilization in design of sensors, microwave, low noise, and optoelectronic devices (HEMT, HBT, LED, Laser acoustic, chemical, optical and biological sensors) is also covered.

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.