This book exhibits novel semiconductor black phosphorous (BP) materials that are developed beyond other 2D materials (graphene and TMDs). It accurately reviews their manufacture strategies, properties, characterization techniques and different utilizations of BP-based materials. It clarifies all perspectives alongside down to earth applications which present a future direction in the biomedical, photo, environmental, energy, and other related fields. Hence, the sections accentuate the basic fundamentals, synthesis, properties, applications, state-of-the-art studies about the BP-based materials through detailed reviews. This book is the result of commitments by numerous experts in the field from various backgrounds and expertise. It will appeal to researchers, scientists and in addition understudies from various teaches, for example, semiconductor innovation, energy and environmental science. The book content incorporates industrial applications and fills the gap between the exploration works in the lab and viable applications in related ventures.

This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field. Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been improved for 20 years, and no new superconductors have been discovered for 5 years. This book will encourage researchers as well as graduate-course students not to give up on the challenges in the future of high- Tc superconductivity.

This book addresses the rapidly developing class of solar cell materials and designed to provide much needed information on the fundamental principles of these materials, together with how these are employed in photovoltaic applications. A special emphasize have been given for the space applications through study of radiation tolerant solar cells. This book present a comprehensive research outlining progress on the synthesis, fabrication and application of solar cells from fundamental to device technology and is helpful for graduate students, researchers, and technologists engaged in research and development of materials.

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

This thesis reports on the use of scanning tunnelling microscopy to elucidate the atomic-scale electronic structure of a charge density wave, revealing that it has a d-symmetry form factor, hitherto unobserved in nature. It then details the development of an entirely new class of scanned probe: the scanning Josephson tunnelling microscope. This scans the Josephson junction formed between a cuprate superconducting microscope tip and the surface of a cuprate sample, thereby imaging the superfluid density of the sample with nanometer resolution. This novel method is used to establish the existence of a spatially modulated superconducting condensate, something postulated theoretically over half a century ago but never previously observed.

The CMOS Cookbook contains all you need to know to understand and successfully use CMOS (Complementary Metal-Oxide Semiconductor) integrated circuits. Written in a "cookbook" format that requires little math, this practical, user-oriented book covers all the basics for working with digital logic and many of its end appilations.
Whether you're a newcomver to logic and electronics or a senior design engineer, you'll find CMOS Cookbook and its examples helpful as a self-learning guide, a reference handbook, a project-idea book, or a text for teaching others digital logic at the high school through university levels.
In the pages of this revised edition, you'll discover:
*What CMOS is, who makes it, and how the basic transistors, inverters, and logic and transmission gates work
*CMOS usage rules, power-suppy examples, and information on breadboards, state testing, tools, and interfacing
*Discussions of the latest CMOS devices and sub-families, including the 74C, 74HC, and 74HCT series that streamline TTL and CMOS interfacing
*An in-depth look at multivibrators - including astable, monostable, and bistable - and linear techniques
*Clocked-logic designs and the extensive applications of JK and D-type flip-flops
*A helpful appendix featuring a TTL-to-CMOS conversion chart

Many open questions in Theoretical Physics pertain to strongly interacting quantum systems such as the quark-gluon plasma (QGP) produced in heavy-ion collisions or the strange-metal phase observed in many high-temperature superconductors. These systems are notoriously difficult to study using traditional methods such as perturbation theory, but the gauge/gravity duality offers a successful alternative approach, which maps strongly interacting quantum gauge theories to computationally tractable, classical gravity theories. This book begins with a pedagogical introduction to how the duality can be used to extract transport properties of quantum systems from their gravity dual. It then presents new results on hydrodynamic transport in strongly interacting quantum fluids, providing strong evidence that the Haack-Yarom identity between second-order transport coefficients holds for all fluids with a classical gravity dual and may be a universal feature of all strongly coupled quantum fluids such as the QGP. Newly derived Kubo formulae, expressing transport coefficients in terms of quantum correlators, hold independently of the duality. Lastly, the book discusses new results on magnetic impurities in strongly correlated metals, including the first dual gravity description of an inter-impurity coupling, crucial for the quantum criticality underlying the strange-metal phase.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

This book covers in a textbook-like fashion the basics or organic solar cells, addressing the limits of photovoltaic energy conversion and giving a well-illustrated introduction to molecular electronics with focus on the working principle and characterization of organic solar cells. Further chapters based on the author's dissertation focus on the electrical processes in organic solar cells by presenting a detailed drift-diffusion approach to describe exciton separation and charge-carrier transport and extraction. The results, although elaborated on small-molecule solar cells and with focus on the zinc phthalocyanine: C60 material system, are of general nature. They propose and demonstrate experimental approaches for getting a deeper understanding of the dominating processes in amorphous thin-film based solar cells in general. The main focus is on the interpretation of the current-voltage characteristics (J-V curve). This very standard measurement technique for a solar cell reflects the electrical processes in the device. Comparing experimental to simulation data, the author discusses the reasons for S-Shaped J-V curves, the role of charge carrier mobilities and energy barriers at interfaces, the dominating recombination mechanisms, the charge carrier generation profile, and other efficiency-limiting processes in organic solar cells. The book concludes with an illustrative guideline on how to identify reasons for changes in the J-V curve. This book is a suitable introduction for students in engineering, physics, material science, and chemistry starting in the field of organic or hybrid thin-film photovoltaics. It is just as valuable for professionals and experimentalists who analyze solar cell devices.

The book deals with applications of the AdS/CFT correspondence to strongly coupled condensed matter systems. In particular, it concerns with the study of thermo-electric transport properties of holographic models exhibiting momentum dissipation and their possible applications to the transport properties of strange metals. The present volume constitutes one of the few examples in the literature in which the topic is carefully reviewed both from the experimental and theoretical point of view, including not only holographic results but also standard condensed matter achievements developed in the past decades. This work might be extremely useful both for scientific and pedagogical purposes.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book offers a theoretical description of topological matter in terms of effective field theories, and in particular topological field theories, focusing on two main topics: topological superconductors and topological insulators.Even though there is vast literature on these subjects, the book fills an important gap by providing a concise introduction to both topological order and symmetry-protected phases using a modern mathematical language, and developing the theoretical concepts by highlighting the physics and the physical properties of the systems. Further, it discusses in detail the topological interactions for topologically ordered matter, and the response to smooth external fields for symmetry protected matter. The book also covers more specialized topics that cannot be found elsewhere. Specifically, the response of superconductors to geometry, including the newly discovered geo-Meissner effect; and a correction to the usual Meissner effect, only present in the topologically interesting chiral superconductors.

This thesis presents various characteristics of 122-type iron pnictide (FeSC) such as crystal and electronic structure, carrier-doping effect, and impurity-scattering effect, using transport, magnetization, specific heat, single-crystal X-ray diffraction, and optical spectral measurements. Most notably the measurement on the magnetic fluctuation in the material successfully explains already known unusual electronic properties, i.e., superconducting gap symmetry, anisotropy of in-plane resistivity in layered structure, and charge dynamics; and comparing them with those of normal phase, the controversial problems in FeSCs are eventually settled. The thesis provides broad coverage of the physics of FeSCs both in the normal and superconducting phase, and readers therefore benefit from the efficient up-to-date study of FeSCs in this thesis. An additional attraction is the detailed description of the experimental result critical for the controversial problems remaining since the discovery of FeSC in 2008, which helps readers follow up recent developments in superconductor research.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ("become hot"), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The books main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

Volume 7 & 8
The device sizes in the semiconductor industries are shrinking, devices become more vulnerable to smaller contaminant particles, and most conventional cleaning techniques employed in the industry are not effective at smaller scales. New cleaning techniques will have to be considered and employed for contaminant removal. Similarly, new cleaning techniques for molecular contaminants will also have to be deployed.
The book series Developments in Surface Contamination and Cleaning as a whole will provide an excellent source of information on these alternative cleaning techniques as well as methods for characterization and validation of surface contamination. Each volume has a particular topical focus, covering the key techniques and recent developments in the area.
Volume 8: Wet and Dry Cleaning Methods
Several novel wet and dry surface cleaning methods are addressed in this Volume. Many of these methods have not been reviewed previously, or the previous reviews are dated. These methods are finding increasing commercial application and the information in this book will be of high value to the reader.
Volume 7 & 8
Edited by the leading experts in small-scale particle surface contamination, cleaning and cleaning control this book will be an invaluable reference for researchers and engineers in R&D, manufacturing, quality control and procurement specification situated in a multitude of industries such as: aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. Researchers in an academic setting will also find these volumes excellent source books.
This Volume complements other volumes in this series and:
provides a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or handling the consequences of surface contamination
addresses the continuing trends of shrinking device size and contamination vulnerability in a range of industries, spearheaded by the semiconductor industry and other
covers novel wet and dry surface cleaning methods of increasing commercial importance"

Volume 7 & 8

The device sizes in the semiconductor industries are shrinking, devices become more vulnerable to smaller contaminant particles, and most conventional cleaning techniques employed in the industry are not effective at smaller scales. New cleaning techniques will have to be considered and employed for contaminant removal. Similarly, new cleaning techniques for molecular contaminants will also have to be deployed.

The book series "Developments in Surface Contamination and Cleaning" as a whole will provide an excellent source of information on these alternative cleaning techniques as well as methods for characterization and validation of surface contamination. Each volume has a particular topical focus, covering the key techniques and recent developments in the area.

Volume 7: Contamination Sources, Measurement, Validation, and Regulatory Aspects

The chapters in this Volume addressthesources of surface contaminants and various methods for theircollection and characterization, as well as methods for cleanliness validation. Regulatory aspects of cleaning are also covered. The collection of topics in this book is unique and complements other volumes in this series.

Volume 7 & 8

Edited by the leading experts in small-scale particle surface contamination, cleaning and cleaning control this book will be an invaluable reference for researchers and engineers in R&D, manufacturing, quality control and procurement specification situated in a multitude of industries such as: aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. Researchers in an academic setting will also find these volumes excellent source books.
This Volume complements other volumes in this series and:
provides a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or handling the consequences of surface contamination
addresses the continuing trends of shrinking device size and contamination vulnerability in a range of industries, spearheaded by the semiconductor industry and other
Volume 7]
includes new regulatory aspects"

This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.

This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

"Silicon-On-Insulator (SOI) Technology: Manufacture and Applications" covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics.

The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Parttwo covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors.

The extensive coverage provided by "Silicon-On-Insulator (SOI) Technology" makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors.
Covers SOI transistors and circuits, as well as manufacturing processes and reliabilityLooks at applications such as memory, power devices, and photonics"

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.