The author of this unique volume, Lev P Gor'kov is internationally renowned for his seminal contribution in the fundamentals of the Theory of Superconductivity, Theory of Metals, the field of Quantum Statistical Physics, and more generally, Organic Metals and the like. Each reprints' group is preceded by the author's introductions and commentaries clarifying the formulation of a problem, summarizing the essence of the results and placing them in the context of recent developments. The author belongs to the last generation of scientists who were the direct disciples of the legendary Russian theorist Lev Landau. And Gor'kov's achievements reflect the unique style and the originality of this famous Scientific School. As with other Russian scientists of his generation, many of the pioneering papers by Lev Gor'kov have been published in the Russian journals that are hard-to-reach for modern readers, students and postdocs. Allowing readers a glimpse into the various ways that the field of condensed matter physics was evolving for more than half a century, the volume is a valuable source for historians of science.

Volume 7 & 8
The device sizes in the semiconductor industries are shrinking, devices become more vulnerable to smaller contaminant particles, and most conventional cleaning techniques employed in the industry are not effective at smaller scales. New cleaning techniques will have to be considered and employed for contaminant removal. Similarly, new cleaning techniques for molecular contaminants will also have to be deployed.
The book series Developments in Surface Contamination and Cleaning as a whole will provide an excellent source of information on these alternative cleaning techniques as well as methods for characterization and validation of surface contamination. Each volume has a particular topical focus, covering the key techniques and recent developments in the area.
Volume 8: Wet and Dry Cleaning Methods
Several novel wet and dry surface cleaning methods are addressed in this Volume. Many of these methods have not been reviewed previously, or the previous reviews are dated. These methods are finding increasing commercial application and the information in this book will be of high value to the reader.
Volume 7 & 8
Edited by the leading experts in small-scale particle surface contamination, cleaning and cleaning control this book will be an invaluable reference for researchers and engineers in R&D, manufacturing, quality control and procurement specification situated in a multitude of industries such as: aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. Researchers in an academic setting will also find these volumes excellent source books.
This Volume complements other volumes in this series and:
provides a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or handling the consequences of surface contamination
addresses the continuing trends of shrinking device size and contamination vulnerability in a range of industries, spearheaded by the semiconductor industry and other
covers novel wet and dry surface cleaning methods of increasing commercial importance"

Volume 7 & 8

The device sizes in the semiconductor industries are shrinking, devices become more vulnerable to smaller contaminant particles, and most conventional cleaning techniques employed in the industry are not effective at smaller scales. New cleaning techniques will have to be considered and employed for contaminant removal. Similarly, new cleaning techniques for molecular contaminants will also have to be deployed.

The book series "Developments in Surface Contamination and Cleaning" as a whole will provide an excellent source of information on these alternative cleaning techniques as well as methods for characterization and validation of surface contamination. Each volume has a particular topical focus, covering the key techniques and recent developments in the area.

Volume 7: Contamination Sources, Measurement, Validation, and Regulatory Aspects

The chapters in this Volume addressthesources of surface contaminants and various methods for theircollection and characterization, as well as methods for cleanliness validation. Regulatory aspects of cleaning are also covered. The collection of topics in this book is unique and complements other volumes in this series.

Volume 7 & 8

Edited by the leading experts in small-scale particle surface contamination, cleaning and cleaning control this book will be an invaluable reference for researchers and engineers in R&D, manufacturing, quality control and procurement specification situated in a multitude of industries such as: aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. Researchers in an academic setting will also find these volumes excellent source books.
This Volume complements other volumes in this series and:
provides a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or handling the consequences of surface contamination
addresses the continuing trends of shrinking device size and contamination vulnerability in a range of industries, spearheaded by the semiconductor industry and other
Volume 7]
includes new regulatory aspects"

The book deals with applications of the AdS/CFT correspondence to strongly coupled condensed matter systems. In particular, it concerns with the study of thermo-electric transport properties of holographic models exhibiting momentum dissipation and their possible applications to the transport properties of strange metals. The present volume constitutes one of the few examples in the literature in which the topic is carefully reviewed both from the experimental and theoretical point of view, including not only holographic results but also standard condensed matter achievements developed in the past decades. This work might be extremely useful both for scientific and pedagogical purposes.

Many open questions in Theoretical Physics pertain to strongly interacting quantum systems such as the quark-gluon plasma (QGP) produced in heavy-ion collisions or the strange-metal phase observed in many high-temperature superconductors. These systems are notoriously difficult to study using traditional methods such as perturbation theory, but the gauge/gravity duality offers a successful alternative approach, which maps strongly interacting quantum gauge theories to computationally tractable, classical gravity theories. This book begins with a pedagogical introduction to how the duality can be used to extract transport properties of quantum systems from their gravity dual. It then presents new results on hydrodynamic transport in strongly interacting quantum fluids, providing strong evidence that the Haack-Yarom identity between second-order transport coefficients holds for all fluids with a classical gravity dual and may be a universal feature of all strongly coupled quantum fluids such as the QGP. Newly derived Kubo formulae, expressing transport coefficients in terms of quantum correlators, hold independently of the duality. Lastly, the book discusses new results on magnetic impurities in strongly correlated metals, including the first dual gravity description of an inter-impurity coupling, crucial for the quantum criticality underlying the strange-metal phase.

This thesis presents various characteristics of 122-type iron pnictide (FeSC) such as crystal and electronic structure, carrier-doping effect, and impurity-scattering effect, using transport, magnetization, specific heat, single-crystal X-ray diffraction, and optical spectral measurements. Most notably the measurement on the magnetic fluctuation in the material successfully explains already known unusual electronic properties, i.e., superconducting gap symmetry, anisotropy of in-plane resistivity in layered structure, and charge dynamics; and comparing them with those of normal phase, the controversial problems in FeSCs are eventually settled. The thesis provides broad coverage of the physics of FeSCs both in the normal and superconducting phase, and readers therefore benefit from the efficient up-to-date study of FeSCs in this thesis. An additional attraction is the detailed description of the experimental result critical for the controversial problems remaining since the discovery of FeSC in 2008, which helps readers follow up recent developments in superconductor research.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

"Silicon-On-Insulator (SOI) Technology: Manufacture and Applications" covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics.

The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Parttwo covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors.

The extensive coverage provided by "Silicon-On-Insulator (SOI) Technology" makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors.
Covers SOI transistors and circuits, as well as manufacturing processes and reliabilityLooks at applications such as memory, power devices, and photonics"

This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

This book offers a theoretical description of topological matter in terms of effective field theories, and in particular topological field theories, focusing on two main topics: topological superconductors and topological insulators.Even though there is vast literature on these subjects, the book fills an important gap by providing a concise introduction to both topological order and symmetry-protected phases using a modern mathematical language, and developing the theoretical concepts by highlighting the physics and the physical properties of the systems. Further, it discusses in detail the topological interactions for topologically ordered matter, and the response to smooth external fields for symmetry protected matter. The book also covers more specialized topics that cannot be found elsewhere. Specifically, the response of superconductors to geometry, including the newly discovered geo-Meissner effect; and a correction to the usual Meissner effect, only present in the topologically interesting chiral superconductors.

An important resource for students, engineers and researchers working in the area of thin film deposition using "physical vapor deposition" (e.g. "sputtering") for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues.

The content of the book has been divided into two sections: (a) the "first section" (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the "second section" (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications.

In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful.

.
Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirementsPractical information on technology trends, role of sputtering and major OEMs Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc.Practical case-studies on target performance and troubleshootingEssential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.

Three dimensional (3D) optical geometries are becoming more common in the literature and lexicon of solar cells. "Three Dimensional Solar Cells Based on Optical Confinement Geometries" describes and reveals the basic operational nuances of 3D photovoltaics using three standard tools: Equivalent Circuit Models, Ray Tracing Optics in the Cavity, and Absorber Spectral Response. These tools aide in understanding experimental absorption profile and device parameters including Jsc, Voc, Fill Factor, and EQE. These methods also apply to individual optical confinement geometry device, integrated optical confinement geometry device, and hybrid optical confinement geometry device.
Additionally, this book discusses the importance of these methods in achieving the goal of high efficiency solar cells and suggests a possible application in large-scale photovoltaics business, like solar farms.

This invaluable book provides a comprehensive treatment of design and applications of semiconductor optical amplifiers (SOA). SOA is an important component for optical communication systems. It has applications as in-line amplifiers and as functional devices in evolving optical networks. The functional applications of SOAs were first studied in the early 1990's, since then the diversity and scope of such applications have been steadily growing. This is the second edition of a book on Semiconductor Optical Amplifiers first published in 2006 by the same authors. Several chapters and sections representing new developments in the chapters of the first edition have been added. The new chapters cover quantum dot semiconductor optical amplifiers (QD-SOA), reflective semiconductor optical amplifiers (RSOA) for passive optical network applications, two-photon absorption in amplifiers, and, applications of SOA as broadband sources. They represent advances in research, technology and commercial trends in the area of semiconductor optical amplifiers.Semiconductor Optical Amplifier is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of optical amplifiers. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

In this thesis the author presents the results of extensive spectroscopy experiments beyond the bounds of each transition element to clarify the origins of characteristic spectral features and charge dynamics in charge-spin-orbital coupled phenomena in Mott-transition oxides. Several counterpart 3d transition-metal oxides were adopted as model systems suitable for examining the mechanisms involved, and their electronic structures were systematically investigated using three main spectroscopy methods.

Comparative studies on the charge dynamics and Mott transition features of transition-metal oxides were performed: Charge dynamics and thermoelectricity in a typical Mott transition system La1 xSrxVO3, charge dynamics in a doped valence-bond solid system (Ti1 xVx)2O3 and in layered nickelates R2-xSrxNiO4 with charge-ordering instability are investigated thoroughly. The results obtained successfully provide a number of novel insights into the emergent phenomena near the Mott transition.

"

Metamaterials, artificial electromagnetic media achieved by structuring on the subwave-length-scale were initially suggested for the negative index and superlensing. They became a paradigm for engineering electromagnetic space and controlling propagation of waves. The research agenda is now shifting on achieving tuneable, switchable, nonlinear and sensing functionalities. The time has come to talk about the emerging research field of metadevices employing active and tunable metamaterials with unique functionalities achieved by structuring of functional matter on the subwave-length scale. This book presents the first systematic and comprehensive summary of the reviews written by the pioneers and top-class experts in the field of metamaterials. It addresses many grand challenges of the cutting edge research for creating smaller and more efficient photonic structures and devices.

"Semiconductors and Semimetals" has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in "Semiconductors and Semimetals" have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Written and edited by internationally renowned experts
Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

In this thesis, the author investigates hidden-order phase transition at" T"0 = 17.5 K in the heavy-fermion URu2Si2. The four-fold rotational symmetry breaking in the hidden order phase, which imposes a strong constraint on the theoretical model, is observed through the magnetic torque measurement. The translationally invariant phase with broken rotational symmetry is interpreted as meaning that the hidden-order phase is an electronic "nematic" phase. The observation of such nematicity in URu2Si2 indicates a ubiquitous nature among the strongly correlated electron systems.

The author also studies the superconducting state of URu2Si2 below" T"c = 1.4 K, which coexists with the hidden-order phase. A peculiar vortex penetration in the superconducting state is found, which may be related to the rotational symmetry breaking in the hidden-order phase. The author also identifies a vortex lattice melting transition. This transport study provides essential clues to the underlying issue of quasiparticle dynamics as to whether a quasiparticle Bloch state is realized in the periodic vortex lattice.

This thesis combines highly accurate optical spectroscopy data on the recently discovered iron-based high-temperature superconductors with an incisive theoretical analysis. Three outstanding results are reported: (1) The superconductivity-induced modification of the far-infrared conductivity of an iron arsenide with minimal chemical disorder is quantitatively described by means of a strong-coupling theory for spin fluctuation mediated Cooper pairing. The formalism developed in this thesis also describes prior spectroscopic data on more disordered compounds. (2) The same materials exhibit a sharp superconductivity-induced anomaly for photon energies around 2.5 eV, two orders of magnitude larger than the superconducting energy gap. The author provides a qualitative interpretation of this unprecedented observation, which is based on the multiband nature of the superconducting state. (3) The thesis also develops a comprehensive description of a superconducting, yet optically transparent iron chalcogenide compound. The author shows that this highly unusual behavior can be explained as a result of the nanoscopic coexistence of insulating and superconducting phases, and he uses a combination of two complementary experimental methods - scanning near-field optical microscopy and low-energy muon spin rotation - to directly image the phase coexistence and quantitatively determine the phase composition. These data have important implications for the interpretation of data from other experimental probes.

This thesis sheds important new light on the puzzling properties of Strontium Ruthenate. Using a sophisticated weak-coupling approach, exact within certain limits, it shows that proper treatment of spin-orbit and multi-band effects is crucial to the physics. Based on the results of these calculations, it resolves a crucial, long-standing puzzle in the field: It demonstrates why the experimentally observed time-reversal breaking is not incompatible with the observed lack of measurable edge currents. Lastly, the thesis makes predictions for the properties of the material under uniaxial strain, which are in good agreement with recent experiments -resolving the mystery of the so-called 3K phase, and suggesting the intriguing possibility that under strain the superconductor may become conventional.

The book provides a technical account of the basic physics of nanostructures, which are the foundation of the hardware found in all manner of computers. It will be of interest to semiconductor physicists and electronic engineers and advanced research students. Crystalline nanostructures have special properties associated with electrons and lattice vibrations and their interaction. The result of spatial confinement of electrons is indicated in the nomenclature of nanostructures: quantum wells, quantum wires, quantum dots. Confinement also has a profound effect on lattice vibrations. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh's work in the late nineteenth century, but no such documentation exists for optical modes. It is only comparatively recently that any theory of the elastic properties of optical modes exists, and a comprehensive account is given in this book. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces the hybridization of longitudinally and transversely polarized modes, along with, in polar material, electromagnetic modes. Hybrid acoustic and optical modes are described, with an emphasis on polar-optical phonons and their interaction with electrons. Scattering rates in single heterostructures, quantum wells and quantum wires are described and the anharmonic interaction in quantum dots discussed. A description is given of the effects of dynamic screening of hybrid polar modes and the production of hot phonons.

Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additionalchapter is devoted toab initio modeling.

The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples.

The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essentialreferencein the much broader, and extremely hot, field of Nanotechnology.
- Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures.
- Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field.
- Each chapter starts with a didactic introduction on the technique.
- The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures."

This book is a comprehensive guide to both the fundamentals of thermal sensors and their advanced functions. Key topics include sensor materials, CMOS-compatible sensors, measurement capabilities, thermal management and manufacturing processes. The introductory chapter covers the basic principles of thermal sensors from the essentials of heat transfer to smart wireless sensors. Later chapters illustrate the wide range of thermal sensor uses, from microprocessor thermal sensing to energy converter applications. Modeling and simulation techniques are used to explain the future direction of the field. Designed for researchers and practitioners working with wireless sensors and thermal management, Thermal Sensors: Principles and Applications for Semiconductor Industries is a valuable reference to the benefits and challenges these sensors offer. Advanced-level students studying mechanical or electrical engineering and networks will also find the content useful.