The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book.

Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.

Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process.

The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap.

"Flash Memories "offers an opportunity to enhance your understanding of product development key topics such as:

. Reliability optimization of flash memories is all about threshold voltage margin understanding and definition;
. Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window;
. Technical characteristics are translated into quantitative performance indicators;
. Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; . Cost, density, performance and durability values are combined into a common factor - performance indicator - which fulfills the application requirements"

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

This work describes theoretical and experimental advances towards the realization of a hybrid quantum processor in which the collective degrees of freedom of an ensemble of spins in a crystal are used as a multi-qubit register for superconducting qubits. A memory protocol made of write, read and reset operations is first presented, followed by the demonstration of building blocks of its implementation with NV center spins in diamond. Qubit states are written by resonant absorption of a microwave photon in the spin ensemble and read out of the memory on-demand by applying Hahn echo refocusing techniques to the spins. The reset step is implemented in between two successive write-read sequences using optical repumping of the spins.

The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of plasmonics appeared, dedicated to the manipulation with evanescent, surface-bound electromagnetic waves and offering an opportunity to merge nanoelectronics with all-optical circuitry. In the field of infrared technologies MEMS and nanotechnologies ensured the appearance of a new generation of silicon-based thermal detectors with properties vastly surpassing the conventional thermal devices. However, another family of infrared detectors, photonic devices based on narrow-bandgap semiconductors, has traditionally been superior to thermal detectors. Literature about their micro and nanophotonic enhancement has been scarce and scattered through journals. This book offers the first systematic approach to numerous different MEMS and nanotechnology-based methods available for the improvement of photonic infrared detectors and points out to a path towards uncooled operation with the performance of cryogenically cooled devices. It is shown that a vast area for enhancement does exists and that photonic devices can readily keep their leading position in infrared detection. The various methods and approaches described in the book are also directly applicable to different other types of photodetectors like solar cells, often with little or no modification.

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: * Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO * Presents crystallographic overviews of IGZO and related compounds. * Offers an in-depth understanding of CAAC-IGZO. * Explains the fabrication method of CAAC-IGZO thin films. * Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. * Describes the manufacturing process the CAAC-IGZO transistors and introduces the device application using CAAC-IGZO.

This book provides a systematic presentation of the principles and practices behind the synthesis and functionalization of graphene and grapheme oxide (GO), as well as the fabrication techniques for transparent conductors from these materials. Transparent conductors are used in a wide variety of photoelectronic and photovoltaic devices, such as liquid crystal displays (LCDs), solar cells, optical communication devices, and solid-state lighting. Thin films made from indium tin oxide (ITO) have thus far been the dominant source of transparent conductors, and now account for 50% of indium consumption. However, the price of Indium has increased 1000% in the last 10 years. Graphene, a two-dimensional monolayer of sp2-bonded carbon atoms, has attracted significant interest because of its unique transport properties. Because of their high optical transmittance and electrical conductivity, thin film electrodes made from graphene nanosheets have been considered an ideal candidate to replace expensive ITO films. Graphene for Transparent Conductors offers a systematic presentation of the principles, theories and technical practices behind the structure-property relationship of the thin films, which are the key to the successful development of high-performance transparent conductors. At the same time, the unique perspectives provided in the applications of graphene and GO as transparent conductors will serve as a general guide to the design and fabrication of thin film materials for specific applications.

This thesis presents first observations of superconductivity in one- or two-atomic-scale thin layer materials. The thesis begins with a historical overview of superconductivity and the electronic structure of two-dimensional materials, and mentions that these key ingredients lead to the possibility of the two-dimensional superconductor with high phase-transition temperature and critical magnetic field. Thereafter, the thesis moves its focus onto the implemented experiments, in which mainly two different materials thallium-deposited silicon surfaces and metal-intercalated bilayer graphenes, are used. The study of the first material is the first experimental demonstration of both a gigantic Rashba effect and superconductivity in the materials supposed to be superconductors without spatial inversion symmetry. The study of the latter material is relevant to superconductivity in a bilayer graphene, which was a big experimental challenge for a decade, and has been first achieved by the author. The description of the generic and innovative measurement technique, highly effective in probing electric resistivity of ultra-thin materials unstable in an ambient environment, makes this thesis a valuable source for researchers not only in surface physics but also in nano-materials science and other condensed-matter physics.

This book provides technological perspective and comprehensive overview on the research efforts related to II-VI group cadmium based semiconducting nanomaterials. It describes state-of-the-art information on different synthesis methods for preparation of these materials using a variety of experimental strategies. The effects of synthesis roots on structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport characteristics of these nano-structures are systematically analyzed. A wide target readership comprising of students, researchers, scholars, scientists, technicians, academicians, industrialists can benefit from this book, as cadmium based semiconductors possess significant research and industrial interest thanks to their innovative properties.

Since its inception in 1966, the series of numbered volumes known as "Semiconductors and Semimetals" has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as "Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, " and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in "Semiconductors and Semimetals" have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

This book examines in detail the nonlinear Ginzburg-Landau functional, the model most commonly used in the study of superconductivity. Specifically covered are cases in the presence of a strong magnetic field and with a sufficiently large Ginzburg-Landau parameter kappa. Spectral Methods in Surface Superconductivity is intended for students and researchers with a graduate-level understanding of functional analysis, spectral theory, and the analysis of partial differential equations. The book also includes an overview of all nonstandard material as well as important semi-classical techniques in spectral theory that are involved in the nonlinear study of superconductivity.

This book underscores the essential principles of photocatalysis and provides an update on its scientific foundations, research advances, and current opinions, and interpretations. It consists of an introduction to the concepts that form the backbone of photocatalysis, from the principles of solid-state chemistry and physics to the role of reactive oxidizing species. Having recognised the organic link with chemical kinetics, part of the book describes kinetic concepts as they apply to photocatalysis. The dependence of rate on the reaction conditions and parameters is detailed, the retrospective and prospective aspects of the mechanism of photocatalysis are highlighted, and the adsorption models, photocatalytic rate expressions, and kinetic disguises are examined. This book also discusses the structure, property, and activity relationship of prototypical semiconductor photocatalysts and reviews how to extend their spectral absorption to the visible region to enable the effective use of visible solar spectrum. Lastly, it presents strategies for deriving substantially improved photoactivity from semiconductor materials to support the latest applications and potential trends.

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions.

"FIB Nanostructures "reviews a range of methods, including milling, etching, deposition, and implantation, applied to manipulate structures at the nanoscale. Focused Ion Beam (FIB) is an important tool for manipulating the structure of materials at the nanoscale, and substantially extends the range of possible applications of nanofabrication. FIB techniques are widely used in the semiconductor industry and in materials research for deposition and ablation, including the fabrication of nanostructures such as nanowires, nanotubes, nanoneedles, graphene sheets, quantum dots, etc. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of FIB for nanostructures and related materials and devices, and to provide a comprehensive introduction to the field and directions for further research. Chapters written by leading scientists throughout the world create a fundamental bridge between focused ion beam and nanotechnology that is intended tostimulate readers' interest in developing new types of nanostructures for application to semiconductor technology. These applications are increasingly important for the future development of materials science, energy technology, and electronic devices. The book can be recommended for physics, electrical engineering, and materials science departments as a reference on materials science and device design."

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.

Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.

While basic features of polarons were well recognized a long time ago and have been described in a number of review papers and textbooks, interest in the role of electron-phonon interactions and polaron dynamics in di?- ent materials has recently gone through a vigorous revival. Electron-phonon interactions have been shown to be relevant in many inorganic and organic semiconductors and polymers, colossal magnetoresistance oxides, and tra- port through nanowires and quantum dots also often depends on vibronic displacements of ions. These interactions presumably play a role in hi- temperature superconductors as well. The continued interest in polarons extends beyond the physical description of advanced materials. The ?eld has been a testing ground for analytical, semi-analytical, and numerical techniques, such as path integrals, strong-coupling perturbation expansion, advanced variational methods, exact diagonalization, Quantum Monte Carlo, and other techniques. This book reviews some recent developments in the ?eld of polarons, starting with the basics and covering a number of active directions of research. Single- and multipolaron theories have o?ered more insight into colossal magnetoresistance and in a broad spectrum of ph- ical properties of structures with reduced dimension and dimensionality such as transport, optical absorption, Raman scattering, photoluminescence, magneto-optics, etc. While nobody - at present - has a ?nal theory of hi- temperature superconductivity, we discuss one alternative (polaronic) route. We have bene?ted from discussions with many experts in the ?eld.

This book provides expert coverage of modern and novel aspects of the study of vortex matter, dynamics, and pinning in nanostructured and multi-component superconductors. Vortex matter in superconducting materials is a field of enormous beauty and intellectual challenge, which began with the theoretical prediction of vortices by A. Abrikosov (Nobel Laureate). Vortices, vortex dynamics, and pinning are key features in many of today's human endeavors: from the huge superconducting accelerating magnets and detectors at the Large Hadron Collider at CERN, which opened new windows of knowledge on the universe, to the tiny superconducting transceivers using Rapid Single Flux Quanta, which have opened a revolutionary means of communication. In recent years, two new features have added to the intrinsic beauty and complexity of the subject: nanostructured/nanoengineered superconductors, and the discovery of a range of new materials showing multi-component (multi-gap) superconductivity. In this book, leading researchers survey the most exciting and important recent developments in the field. Topics covered include: the use of scanning Hall probe microscopy to visualize interactions of a single vortex with pinning centers; Magneto-Optical Imaging for investigating what vortex avalanches are, why they appear, and how they can be controlled; and the vortex interactions responsible for the second magnetization peak. Other chapters discuss nanoengineered pinning centers of vortices for improved current-carrying capabilities, current anisotropy in cryomagnetic devices in relation to the pinning landscape, and the new physics associated with the discovery of new superconducting materials with multi-component superconductivity. The book offers something for almost everybody interested in the field: from experimental techniques to visualize vortices and study their dynamics, to a state-of-the-art theoretical microscopic approach to multicomponent superconductivity.

This book sets out to explain the development of modern electronic systems and devices from the viewpoint of the semiconductor materials (germanium, silicon, gallium arsenide and many others) which made them possible. It covers the scientific understanding of these materials and its intimate relationship with their technology and many applications. It began with Michael Faraday, took off in a big way with the invention of the transistor at Bell Labs in 1947 and is still burgeoning today. It is a story to match any artistic or engineering achievement of man and this is the first time it has been presented in a style suited to the non-specialist. It is written in a lively, non-mathematical style which brings out the excitement of discovery and the fascinating interplay between the demands of system pull and technological push. It also looks at the nature of some of the personal interactions which helped to shape the modern technological world.
An introductory chapter illustrates just how dependent we are on modern electronic systems and explains the significance of semiconductors in their development. It also provides, in as painless a way as possible, a necessary understanding of semiconductor properties in relation to these applications. The second chapter takes up the historical account and ends with some important results emerging from the Second World War including its effect on the organisation of scientific research. Chapter three describes the world-shaking discovery of the transistor and some of the early struggles to make it commercially viable, including the marketing of the first transistor radio. In chapter four we meet the integrated circuit which gave shape to much of our modern life in the form of the personal computer (and which gave rise to a famously long-running patent war ). Later chapters cover the application of compound semiconductors to light-emitting devices, such as LEDs and lasers, and light detecting devices such as photocells. We learn how these developments led to the invention of the CD player and DVD recorder, how other materials were applied to the development of sophisticated night vision equipment, fibre optical communications systems, solar photovoltaic panels and flat panel displays. Similarly, microwave techniques essential to our modern day love of mobile phoning are seen to depend on clever materials scientists who, not for the first time, "invented" new semiconductors with just the right properties.
Altogether, it is an amazing story and one which deserves to be more widely known. Read this book and you will be rewarded with a much deeper understanding and appreciation of the technological revolution which shapes so many aspects of our lives.
- A historical account of the development of semiconductor physics, devices and applications from the nineteenth century to the present day
- Coverage of the importance of material quality and its relation to the physics of the devices
- Presented in a strictly non-mathematical and anecedotal way, to appeal to a wide audience
- Provides the broad sweep of science history"

This book deals with all aspects of plasmonics, basics, applications and advanced developments. Plasmonics is an emerging field of research dedicated to the resonant interaction of light with metals. The light/matter interaction is strongly enhanced at a nanometer scale which sparks a keen interest of a wide scientific community and offers promising applications in pharmacology, solar energy, nanocircuitry or also light sources. The major breakthroughs of this field of research originate from the recent advances in nanotechnology, imaging and numerical modelling. The book is divided into three main parts: extended surface plasmons polaritons propagating on metallic surfaces, surface plasmons localized on metallic particles, imaging and nanofabrication techniques. The reader will find in the book: Principles and recent advances of plasmonics, a complete description of the physics of surface plasmons, a historical survey with emphasize on the emblematic topic of Wood's anomaly, an overview of modern applications of molecular plasmonics and an extensive description of imaging and fabrications techniques.

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

An effective and cost efficient protection of electronic system against ESD stress pulses specified by IEC 61000-4-2 is paramount for any system design. This pioneering book presents the collective knowledge of system designers and system testing experts and state-of-the-art techniques for achieving efficient system-level ESD protection, with minimum impact on the system performance. All categories of system failures ranging from 'hard' to 'soft' types are considered to review simulation and tool applications that can be used. The principal focus of System Level ESD Co-Design is defining and establishing the importance of co-design efforts from both IC supplier and system builder perspectives. ESD designers often face challenges in meeting customers' system-level ESD requirements and, therefore, a clear understanding of the techniques presented here will facilitate effective simulation approaches leading to better solutions without compromising system performance. With contributions from Robert Ashton, Jeffrey Dunnihoo, Micheal Hopkins, Pratik Maheshwari, David Pomerenke, Wolfgang Reinprecht, and Matti Usumaki, readers benefit from hands-on experience and in-depth knowledge in topics ranging from ESD design and the physics of system ESD phenomena to tools and techniques to address soft failures and strategies to design ESD-robust systems that include mobile and automotive applications. The first dedicated resource to system-level ESD co-design, this is an essential reference for industry ESD designers, system builders, IC suppliers and customers and also Original Equipment Manufacturers (OEMs). Key features: * Clarifies the concept of system level ESD protection. * Introduces a co-design approach for ESD robust systems. * Details soft and hard ESD fail mechanisms. * Detailed protection strategies for both mobile and automotive applications. * Explains simulation tools and methodology for system level ESD co-design and overviews available test methods and standards. * Highlights economic benefits of system ESD co-design.

Technology computer-aided design, or TCAD, is critical to today's semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.

This thesis describes the construction of a rotatable spin-polarized electron source and its use in spin- and angle-resolved inverse photoemission to investigate the unoccupied electron states of Tl/Si(111)-(1x1) with special emphasis on their spin texture. Towards more efficient electronics - with the electron spin as information carrier: This motto is the motivation for numerous studies in solid state physics that deal with electron states whose spin degeneracy is lifted by spin-orbit interaction. This thesis addresses the spin-orbit-induced spin textures in momentum space in the surface electronic structure of a prototypical Rashba-type hybrid system: heavy metal thallium on semiconducting silicon. For Tl/Si(111)-(1x1), the thallium adlayer provides surface states with strong spin-orbit interaction and peculiar spin-orbit-induced spin textures: spin rotations and spin chirality in momentum space for unoccupied surface states with giant spin splittings. Almost completely out-of-plane spin-polarized valleys in the vicinity of the Fermi level are identified. As the valley polarization is oppositely oriented at specific points in momentum space, backscattering should be strongly suppressed in this system.

This book on pressure-induced phase transitions in AB2X4 chalcogenide compounds deals with one important AmBnXp material. The interest in these materials is caused by their properties. The results are discussed for three main groups of structural families: cubic-spinel structures, defective tetragonal structures, and other structures like layered and wurtzite-type modifications. A systematic analysis of the behavior of cubic (spinel), tetragonal (defect chalcopyrites and stannites) and other crystal modifications of AB2X4 compounds under hydrostatic pressure is performed. The behavior of AIIAl2S4, AIIGa2S4, AIIAl2Se4 and AIIGa2Se4 compounds with defective tetragonal structures, compounds with layered and wurtzite structures under hydrostatic pressure and the pressure dependence of the band gap, lattice parameters, interatomic distances, vibrational modes and pressure-induced phase transitions is discussed. Many of these compounds, except oxide spinels, undergo a pressure-induced phase transition towards the rocksalt-type structure. The phase transition is preceded by disorder in the cation sublattice. The dependence of the transition pressure to the rocksalt-type structure as a function of the compound ionicity and the size criterion is analyzed. At high pressures, all ordered-vacancy compounds are found to exhibit a band anticrossing between several conduction bands that leads to a strong decrease of its pressure coefficient and consequently to a strong non-linear pressure dependence of the direct bandgap energy. Theoretical studies of phase transitions in several ordered-vacancy compounds reveal that the existence of ordered vacancies alter the cation-anion bond distances and their compressibilities. The book is written for students, Ph D. students and specialists in materials science, phase transitions and new materials.