Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bonding, heterostructure nanowires, and more. Basic knowledge on dislocations in semiconductors and innovative methods to eliminate threading dislocations are provided, and successful device applications are reviewed. It covers a variety of important semiconductor materials like SiGe, III-V including GaN and nano-wires; epitaxial methods like molecular beam epitaxy and metal organic vapor phase epitaxy; and devices like transistors and lasers etc.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis Covers theory, materials, techniques, and applications Provides starting threads for new research This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

This open access book collects the contributions of the seventh school on Magnetism and Synchrotron Radiation held in Mittelwihr, France, from 7 to 12 October 2018. It starts with an introduction to the physics of modern X-ray sources followed by a general overview of magnetism. Next, light / matter interaction in the X-ray range is covered with emphasis on different types of angular dependence of X-ray absorption spectroscopy and scattering. In the end, two domains where synchrotron radiation-based techniques led to new insights in condensed matter physics, namely spintronics and superconductivity, are discussed. The book is intended for advanced students and researchers to get acquaintance with the basic knowledge of X-ray light sources and to step into synchrotron-based techniques for magnetic studies in condensed matter physics or chemistry.

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement.

Serious Competitors to Germanium and Silicon Radiation Detectors

Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolution of germanium by a factor of three. However, while compound semiconductors are routinely used at infrared and optical wavelengths, their development in other wavebands has been plagued by material and fabrication problems. So far, only a few have evolved sufficiently to produce commercial detection systems.

From Crystal Growth to Spectroscopic Performance

Bringing together information scattered across many disciplines, this book summarizes the current status of research in compound semiconductor radiation detectors. It examines the properties, growth, and characterization of compound semiconductors as well as the fabrication of radiation sensors, with particular emphasis on the X- and gamma-ray regimes. It explores the limitations of compound semiconductors and discusses current efforts to improve spectral performances, pointing to where future discoveries may lie.

A timely resource for the established researcher, this book serves as a comprehensive and illustrated reference on material science, crystal growth, metrology, detector physics, and spectroscopy. It can also be used as a textbook for those new to the field of compound semiconductors and their application to radiation detection and measurement.

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in superconductivity, the book includes contributions from many pioneers who are responsible for important steps forward in the field.

The text first discusses interesting stories of the discovery and gradual progress of theory and experimentation. Emphasizing key developments in the early 1950s and 1960s, the book looks at how superconductivity started to permeate society and how most of today s applications are based on the innovations of those years. It also explores the genuine revolution that occurred with the discovery of high temperature superconductors, leading to emerging applications in power storage and fusion reactors.

Superconductivity has become a vast field and this full-color book shows how far it has come in the past 100 years. Along with reviewing significant research and experiments, leading scientists share their insight and experiences working in this exciting and evolving area."

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter-in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems-and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.

This book presents the basics of superconductivity and applications of superconducting magnets. It explains the phenomenon of superconductivity, describes theories of superconductivity, and discusses type II and high-temperature cuprate superconductors. The main focus of the book is the application of superconducting magnets in accelerators, fusion reactors and other advanced applications such as nuclear magnetic resonance (NMR), magnetic resonance imaging (MRI), high-gradient magnetic separation (HGMS), and superconducting magnetic energy storage (SMES). This new and significantly extended second edition covers the state of the art in the development of novel superconductors for advanced magnet applications, as well as the production of practical superconducting wires, tapes, and ultra high current cables used for high-field magnets. It includes two new chapters each devoted to MgB2 and Fe-based superconductors, and discusses the recently developed and world record-setting 45.5-Tesla magnetic field generated by a combination of conventional and high-temperature cuprate superconducting magnets. In addition, it discusses the status and outlook of all current and future nuclear fusion reactors worldwide. The chapter on accelerators includes the ongoing efforts to build high luminosity LHC (HL-LHC), the high-energy 28 TeV LHC (HE-LHC), the future circular collider (FCC) at CERN, and the just launched electro-ion collider (EIC) at Brookhaven National Laboratory. The book is based on the long-standing experience of the author in studying superconducting materials, building magnets and delivering numerous lectures to research scholars and students. The book provides comprehensive and fundamental knowledge in the field of applied superconductivity, greatly benefiting researchers and graduate students wishing to learn more about the various aspects of superconductivity and advanced magnet applications.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

This book describes the history of and recent developments in cobaltite and the spin-crossover (SC) phenomena. It offers readers an overview of essential research conducted on cobaltite and introduces them to the fundamentals of condensed matter physics research. The book consists of two parts. The first part reviews SC phenomena, covering the fundamental physics of SC phenomena and basic material properties of cobaltite. The second part focuses on recent topics in SC cobaltite, including the optical and dynamical features of cobaltite, thin material fabrication, and thermoelectric properties. The comprehensive coverage and clearly structured topics will especially appeal to newcomers to the field of state-of-the-art research on cobaltite and SC physics.

The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

This book introduces the wider field of functional nanomaterials sciences, with a strong emphasis on semiconductor photonics. Whether you are studying photonic quantum devices or just interested in semiconductor nanomaterials and their benefits for optoelectronic applications, this book offers you a pedagogical overview of the relevant subjects along with topical reviews. The book discusses different yet complementary studies in the context of ongoing international research efforts, delivering examples from both fundamental and applied research to a broad readership. In addition, a hand-full of useful optical techniques for the characterization of semiconductor quantum structures and materials are addressed. Moreover, nanostructuring methods for the production of low-dimensional systems, which exhibit advantageous properties predominantly due to quantum effects, are summarized. Science and engineering professionals in the interdisciplinary domains of nanotechnology, photonics, materials sciences, and quantum physics can familiarize themselves with selected highlights with eyes towards photonic applications in the fields of two-dimensional materials research, light-matter interactions, and quantum technologies.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum.

"Semiconductor Devices: Physics and Technology, Third Edition" is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

This book introduces readers to the characteristic features of electromagnetic phenomena in superconductivity. It first demonstrates not only that the diamagnetism in the superconductivity complies with Maxwell's theory, which was formulated before the discovery of superconductivity, but also that the dominant E-B analogy in the electromagnetism loses perfection without the superconductivity. The book then explores flux pinning, which is responsible for the non-dissipative current in DC, leading to irreversibility in AC. Drawing on Maxwell's work, it also proves theoretically that if there is no energy dissipation in the superconductivity caused by the break in time reversal symmetry, it contradicts the thermodynamic principle of energy conservation - something that had previously only been proved experimentally. Lastly, the book addresses the longitudinal magnetic field effect, and explains how this phenomenon leads to a new development of Maxwell's theory. Featuring numerous appendices to help readers understand the methods of derivation of equations, this book offers students and young scientists an introduction to applied superconductivity, especially in the context of power applications. Presenting the characteristic features of electromagnetic phenomena in superconductivity from basic to advanced topics for applications, the book offers a valuable resource for graduate students and researchers studying superconductivity as well as engineers working in electric utility industry.

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

In this book, the history of the concepts critical to the discovery and development of aluminum, its alloys and the anodizing process are reviewed to provide a foundation for the challenges, achievements, and understanding of the complex relationship between the aluminum alloy and the reactions that occur during anodic oxidation. Empirical knowledge that has long sustained industrial anodizing is clarified by viewing the process as corrosion science, addressing each element of the anodizing circuit in terms of the Tafel Equation. This innovative approach enables a new level of understanding and engineering control for the mechanisms that occur as the oxide nucleates and grows, developing its characteristic highly ordered structure, which impact the practical function of the anodic aluminum oxide.

This thesis presents the first successful realization of a compact, low-noise, and few-cycle light source in the mid-infrared wavelength region. By developing the technology of pumping femtosecond chromium-doped II-VI laser oscillators directly with the emission of broad-stripe single-emitter laser diodes, coherent light was generated with exceptionally low amplitude noise - crucial for numerous applications including spectroscopy at high sensitivities. Other key parameters of the oscillator's output, such as pulse duration and output power, matched and even surpassed previous state-of-the-art systems. As a demonstration of its unique capabilities, the oscillator's powerful output was used to drive - without further amplification - the nonlinear generation of coherent mid-infrared light spanning multiple octaves. The resulting table-top system uniquely combines high brilliance and ultrabroad spectral bandwidth in the important mid-infrared spectral range. The rapid development of this technology is comprehensively and lucidly documented in this PhD thesis. Together with a thorough review of literature and applications, and an extensive analysis of the theoretical foundations behind ultrafast laser oscillators, the thesis will serve as a valuable reference for the construction of a new generation of mid-infrared light sources.

This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

This book presents a theoretical study of the generation and conversion of phonon angular momentum in crystals. Recently, rotational motions of lattice vibrations, i.e., phonons, in crystals attract considerable attentions. As such, the book theoretically demonstrate generations of phonons with rotational motions, based on model calculations and first-principle calculations. In systems without inversion symmetry, the phonon angular momentum is shown to be caused by the temperature gradient, which is demonstrated in crystals such as wurtzite gallium nitride, tellurium, and selenium using the first-principle calculations. In systems with neither time-reversal nor inversion symmetries, the phonon angular momentum is shown to be generated by an electric field. Secondly, the book presents the microscopic mechanisms developed by the author and his collaborator on how these microscopic rotations of nuclei are coupled with electron spins. These predictions serve as building blocks for spintronics with phonons or mechanical motions.