Defects in semiconductors have been studied for many years, in
many cases with a view toward controlling their behaviour through
various forms of "defect engineering." For example, in the bulk,
charging significantly affects the total concentration of defects
that are available to mediate phenomena such as solid-state
diffusion. Surface defects play an important role in mediating
surface mass transport during high temperature processing steps
such as epitaxial film deposition, diffusional smoothing in reflow,
and nanostructure formation in memory device fabrication. "Charged
Defects in Semiconductors" details the current state of knowledge
regarding the properties of the ionized defects that can affect the
behaviour of advanced transistors, photo-active devices, catalysts,
and sensors. Features: group IV, III-V, and oxide semiconductors;
intrinsic and extrinsic defects; and, point defects, as well as
defect pairs, complexes and clusters.
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