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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions (Hardcover, 1st ed. 2019)
Loot Price: R2,789
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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions (Hardcover, 1st ed. 2019)
Series: Springer Theses
Expected to ship within 10 - 15 working days
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This book discusses the latest investigations into the electronic
structure of narrow-gap semiconductors in extreme conditions, and
describes in detail magnetic field and pressure measurements using
two high-quality single crystals: black phosphorus (BP) and lead
telluride (PbTe). The book presents two significant findings for BP
and PbTe. The first is the successful demonstration of the
pressure-induced transition from semiconductor to semimetal in the
electronic structure of BP using magnetoresistance measurements.
The second is the quantitative estimation of how well the Dirac
fermion description works for electronic properties in PbTe. The
overviews on BP and PbTe from the point of view of material
properties help readers quickly understand the typical electronic
character of narrow-gap semiconductor materials, which has recently
attracted interest in topological features in condensed matter
physics. Additionally the introductory review of the principles and
methodology allows readers to understand the high magnetic field
and pressure experiments.
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