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Books > Professional & Technical > Energy technology & engineering > Electrical engineering
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Compound and Josephson High-Speed Devices (Paperback, Softcover reprint of the original 1st ed. 1993)
Loot Price: R4,379
Discovery Miles 43 790
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Compound and Josephson High-Speed Devices (Paperback, Softcover reprint of the original 1st ed. 1993)
Series: Microdevices
Expected to ship within 10 - 15 working days
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In recent years, III-V devices, integrated circuits, and
superconducting integrated circuits have emerged as leading
contenders for high-frequency and ultrahigh speed applications.
GaAs MESFETs have been applied in microwave systems as low-noise
and high-power amplifiers since the early 1970s, replacing silicon
devices. The heterojunction high-electron-mobility transistor
(HEMT), invented in 1980, has become a key component for satellite
broadcasting receiver systems, serving as the ultra-low-noise
device at 12 GHz. Furthermore, the heterojunction bipolar
transistor (HBT) has been considered as having the highest
switching speed and cutoff frequency in the semiconductor device
field. Initially most of these devices were used for analog
high-frequency applications, but there is also a strong need to
develop high-speed III-V digital devices for computer, telecom
munication, and instrumentation systems, to replace silicon
high-speed devices, because of the switching-speed and
power-dissipation limitations of silicon. The potential high speed
and low power dissipation of digital integrated circuits using GaAs
MESFET, HEMT, HBT, and superconducting Josephson junction devices
has evoked tremendous competition in the race to develop such
technology. A technology review shows that Japanese research
institutes and companies have taken the lead in the development of
these devices, and some integrated circuits have already been
applied to supercomputers in Japan. The activities of Japanese
research institutes and companies in the III-V and superconducting
device fields have been superior for three reasons. First, bulk
crystal growth, epitaxial growth, process, and design technology
were developed at the same time.
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