Growth of Crystals, Volume 21 presents a survey, with detailed
analysis, of the scientific and technological approaches, and
results obtained, by leading Russian crystal growth specialists
from the late 1990's to date.
The volume contains 16 reviewed chapters on various aspects of
crystal and crystalline film growth from various phases (vapour,
solution, liquid and solid). Both fundamental aspects, e.g. growth
kinetics and mechanisms, and applied aspects, e.g. preparation of
technically important materials in single-crystalline forms, are
covered.
A large portion of the volume is devoted to film growth,
including film growth from eutectic melt, from amorphous solid
state, kinetics of lateral epitaxy and film growth on specially
structured substrates. An important chapter in this section covers
heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which
have important applications in the field of photonics.
The volume also includes a detailed analysis of the structural
aspects of a broad range of laser crystals, information that is
invaluable for successfully growing perfect, laser-effective,
single crystals.
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