The explosion of the science of mesoscopic structures is having a great impact on physics and electrical engineering because of the possible applications of these structures in microelectronic and optoelectronic devices of the future.

This series provides a venue for longer reviews of current advances in geophysics. Written at a level accessible to graduate students, the articles serve to broaden knowledge of various fields and may be useful in courses and seminars.

Advances in Geophysics, Vol. 40 systematically compares many of the currently used statistical approaches to time series analysis and modeling to evaluate each method's robustness and application to geophysical datasets. This volume tackles the age-old problem of how to evaluate the relative roles of deterministic versus stochastic processes (signal vs noise) in their observations. The book introduces the fundamentals in sections titled "1.2 What is a Time Series? " and "1.3 How is a Time Series Quantified?," before diving into Spectral Analysis, Semivariograms, Rescaled-Range Analysis and Wavelet Analysis. The second half of the book applies their self-affine analysis to a number of geophysical time series (historical temperature records, drought hazard assessment, sedimentation in the context of hydrocarbon bearing strata, variability of the Earth's magnetic field).
This volume explores in detail one of the main components of noise, that of long-range persistence or memory. The first chapter is a broad summary of theory and techniques of long-range persistence in time series; the second chapter is the application of long-range persistence to a variety of geophysical time series.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon available in a single source
* Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.
The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.
The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

This volume contains the index for volumes 1-38 in the Advances in Atomic, Molecular, and Optical Physics series.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

This series, established in 1965, is concerned with recent developments in the general area of atomic, molecular, and optical physics. The field is in a state of rapid growth, as new experimental and theoretical techniques are used on many old and new problems. Topics covered also include related applied areas, such as atmospheric science, astrophysics, surface physics, and laser physics.
Articles are written by distinguished experts who are active in their research fields. The articles contain both relevant review material as well as detailed descriptions of important recent developments.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes 54 and 55 reflectthe industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston-cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes 54 and 55 reflectthe industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston-cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

This volume in the Handbook of Optical Constants of Solids is the first and only book to provide comprehensive coverage of refractive index and thermo-optic coefficients. It contains the refractive indexes and thermo-optic coefficients for nonlinear crystals, semiconductors, optical glasses, and fiber glasses. The Sellmeier coefficients of two physically meaningful Sellmeier equations are evaluated and are used to calculate these values throughout the normal transmission region of these optical materials. The author has also included analysis and explanations for some temperature-dependent optical devices/systems

* Presents the optical constants for over 70 technologically interesting crystals and commercial glasses
* Details various techniques for measuring the optical constants and mathematical models for analytical calculations of some data
* Includes thermo-optic coefficients that are necessary to calculate the refractive index of the optical material at any operating temperature
* Describes how all optical devices (both temperature dependent and independent) can be explained satisfactorily by using the two Sellmeier equations

Praise for the Series
"This volume maintains the authoritative standards of the series...The editors and publishers are to be congratulated."
--M.S. Child in Physics Bulletin
"Maintains the high standards of earlier volumes in the series...All the articles are written by experts in the field, and their summaries are most timely...Strongly recommended."
--G. Herzberg in American Scientist

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Solid State Physics, Volume 51 continues the serial's tradition of excellence by focusing on the optical and electronic properties and applications of semiconductors. All of the topics in this volume are at the cutting-edge of research in the semiconductor field and will be of great interest to the scientific community.

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
Key Features
* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Solid State Physics, Volume 50 continues the series' tradition of excellence by focusing on the optical and electronic properties and applications of semiconductors. All of the topics in this volume are at thecutting-edge of research in the semiconductor field and will be of great interest to the scientific community.

This text provides current information on advances in atomic, molecular and optical physics, including articles from experts in the field.

Volume 7 is a direct continuation of Volume 6, which documented the birth of the complementarity argument and its earliest elaborations. It covers the extension and refinement of the complementarity argument from 1933 until Bohrs' death in 1962. All Bohr's publications on the subject, together with selected manuscripts and extracts of his correspondence with friends and fellow pioneers such as Werner Heisenberg and Wolfgang Pauli, are included.

Divided into two, largely independent parts, the volume begins with Bohr's contributions to "Relativistic Quantum Theory." Together with Leon Rosenfeld, Bohr undertook a thorough investigation of the measuring problem in quantum electrodynamics and demonstrated the full accordance between the formalism and the result of idealized thought experiments.

The articles in the second part, although also restricted in scope to the field of physics, address a broader audience. One of the most impressive treatises is Bohr's own account of his debates with Albert Einstein, over more than twenty years, on the consistency, the completeness and the epistemological consequences of quantum mechanics.

Volumes 6 and 7 of the Collected Works are in turn related to the forthcoming Volume 10 which broadens the scope by presenting Bohr's applications of the complementarity argument beyond the domain of physics. Although each volume may be read independently, careful attention should be paid to the interrelationships between each volume in order to appreciate the subtlety of Bohr's continued elaboration and fine-tuning of his complementarity argument.

High-technology industries using plastic deformation demand soundly-based economical decisions in manufacturing design and product testing, and the unified constitutive laws of plastic deformation give researchers aguideline to use in making these decisions. This book provides extensive guidance in low cost manufacturing without the loss of product quality. Each highly detailed chapter of Unified Constitutive Laws of Plastic Deformation focuses on a distinct set of defining equations. Topics covered include anisotropic and viscoplastic flow, and the overall kinetics and thermodynamics of deformation. This important book deals with a prime topic in materials science and engineering, and will be of great use toboth researchers and graduate students.
Key Features
* Describes the theory and applications of the constitutive law of plastic deformation for materials testing
* Examines the constitutive law of plastic deformation as it applies to process and product design
* Includes a program on disk for the determination and development of the constitutive law of plastic deformation
* Considers economical design and testing methods

From the Foreword:
"This series has provided workers in many fields with invaluable reference material and criticism."
--Science Progress
"Should be on the bookshelf of every geophysicist."
--Physics Today
"The entire series should be in the library of every group working in geophysics."
--American Scientist