This book provides a compilation of important optical techniques applied to experiments in heat and mass transfer, multiphase flow and combustion. The emphasis of this book is on the application of these techniques to various engineering problems. The contributions are aiming to provide practicing engineers, both in industry and research, with the recent state of science in the application of advanced optical measurements. The book is written by selected specialists representing leading experts in this field who present new information for the possibilities of these techniques and give stimulation of new ideas for their application.

This volume is a joint effort of the Research Materials Information Center (RMIC) of the Solid State Division at Oak Ridge National Laboratory and the Libraries and Information Systems Center at Bell Telephone Laboratories (BTL) Murray Hill, N. J. The Research Materials Information Center has, since 1963, been answering inquiries on the avail ability, preparation, and properties of inorganic solid-state research materials. The preparation of bibliographies has been essential to this function, and the interest in ferroelectrics led to the compila tion of the journal and report literature on that subject. The 1962 book Ferroelectric Crystals, by Jona and Shirane, was taken as a cutoff point, and all papers through mid-1969 received by the Center have been included. The Libraries and Information Systems Center of BTL has, over a period of years, developed a proprie tary package of computer programs called BELDEX, which formats and generates indexes to biblio graphic material. This group therefore undertook to process RMIC's ferroelectric references by BELDEX so that both laboratories could have the benefit of an indexed basic bibliography in this important research area.

Rapid advances are taking place in the application of density functional theory (DFT) to describe complex electronic structures, to accurately treat large systems and to predict physical and chemical properties. Both theoretical content and computational methodology are developing at a pace which offers researchers new opportunities in areas such as quantum chemistry, cluster science, and solid state physics. This volume contains ten contributions by leading scientists in the field and provides an authoritative overview of the most important developments. The book focuses on the following themes: determining adequate approximations for the many-body problem of electronic correlations; how to transform these approximations into computational algorithms; applications to discover and predict properties of electronic systems; and developing the theory. For researchers in surface chemistry, catalysis, ceramics and inorganic chemistry.

The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.

The study of phase transformations in substitutional alloys, including order disorder phenomena and structural transformations, plays a crucial role in understanding the physical and mechanical properties of materials, and in designing alloys with desired technologically important characteristics. Indeed, most of the physical properties, including equilibrium properties, transport, magnetic, vibrational as well as mechanical properties of alloys are often controlled by and are highly sensitive to the existence of ordered compounds and to the occurrence of structural transformations. Correspondingly, the alloy designer facing the task of processing new high-performance materials with properties that meet specific industrial applications must answer the following question: What is the crystalline structure and the atomic configuration that an alloy may exhibit at given temperature and concentration? Usually the answer is sought in the phase-diagram of a relevant system that is often determined experimentally and does not provide insight to the underlying mechanisms driving phase stability. Because of the rather tedious and highly risky nature of developing new materials through conventional metallurgical techniques, a great deal of effort has been expended in devising methods for understanding the mechanisms contrOlling phase transformations at the microscopic level. These efforts have been bolstered through the development of fully ab initio, accurate theoretical models, coupled with the advent of new experimental methods and of powerful supercomputer capabilities.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.

The present volume contains the texts of the invited talks delivered at the Sev enth International Conference on Recent Progress in Many-Body Theories held at the University of Minnesota during the period August 26-31, 1991. The proceedings of the Fourth Conference (Oulu, Finland, 1987) and Fifth Conference (Arad, Israel, 1989) have been published by Plenum as the first two volumes of this series. Papers from the First Conference (Trieste, 1978) comprise Nuclear Physics volume A328, Nos. 1, 2. The Second Conference (Oaxtepec, Mexico, 1989) was published by Springer-Verlag as volume 142 of "Lecture Notes in Physics," entitled "Recent Progress in Many Body Theories." Volume 198 of the same series contains the papers from the Third Conference (Altenberg, Germany, 1983). These volumes are intended to cover a broad spectrum of current research topics in physics that benefit from the application of many-body theories for their elucidation. At the same time there is a focus on the development and refinement of many-body methods. One of the major aims of the conference series has been to foster the ex change of ideas among physicists working in such diverse areas as nucleon-nucleon in teractions, nuclear physics, astronomy, atomic and molecular physics, quantum chem istry, quantum fluids, and condensed matter physics. The present volume contains contributions from all of these areas."

This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Building on the extensive coverage of the first volume, Volume 2 focuses on the fundamentals of measurements and computational techniques that will aid researchers in the construction and use of measurement devices.

This book on Extended X-Ray Absorption Fine Structure (EXAFS) Spectroscopy grew out of a symposium, with the same title, organized by us at the 1979 Meeting of the Materials Research Society (MRS) in Boston, MA. That meeting provided not only an overview of the theory, instrumentation and practice of EXAFS Spectroscopy as currently employed with photon beams, but also a forum for a valuable dialogue between those using the conventional approach and those breaking fresh ground by using electron energy loss spectroscopy (EELS) for EXAFS studies. This book contains contributions from both of these groups and provides the interested reader with a detailed treatment of all aspects of EXAFS spectroscopy, from the theory, through consideration of the instrumentation for both photon and electron beam purposes, to detailed descriptions of the applications and physical limitations of these techniques. While some of the material was originally presented at the MRS meeting all of the chapters have been specially written for this book and contain much that is new and significant.

It is almost self-evident that surface and interface science, coupled with the electronic structure of bulk materials, playa fundamental role in the understanding of materials properties. If one is to have any hope of understanding such properties as catalysis, microelectronic devices and contacts, wear, lubrication, resistance to corrosion, ductility, creep, intragranular fracture, toughness and strength of steels, adhesion of protective oxide scales, and the mechanical properties of ceramics, one must address a rather complex problem involving a number of fundamental parameters: the atomic and electronic structure, the energy and chemistry of surface and interface regions, diffusion along and across interfaces, and the response of an interface to stress. The intense need to gain an understanding of the properties of surfaces and interfaces is amply attested to by the large number of conferences and workshops held on surface and interface science. Because of this need, the fields of surface and interface science have been established in their own right, although their development presently lags behind that of general materials science associated with bulk, translationally invariant systems. There are good reasons to expect this situation to change rather dramatically in the next few years. Existing techniques for investigating surfaces and interfaces have reached maturity and are increasingly being applied to systems of practical relevance. New techniques are still being created, which drastically widen the scope of applicability of surface and interface studies. On the experimental side, new microscopies are bearing fruit.

This volume contains the papers presented at the First Mexico-U.S.A. Symposium on Materials Sciences and Engineering held in Ixtapa, Guerrero, Mexico, during Septem ber 24-27, 1991. The conference was conceived with the primary objective of increas ing the close ties between scientists and engineers in both Mexico and the U.S. with an interest in materials. The conference itself would have not taken place without the drive, determination and technical knowledge of John K. Tien of the University of Texas at Austin and of Francisco Mejia Lira of the Universidad de San Luis Potosi. This book is dedicated to their memory. The event brought together materials scientists and engineers with interests in a broad range of subjects in the processing, characterization and properties of advanced materials. Several papers were dedicated to structural materials ranging from ferrous alloys to intemetallics, ceramics and composites. The presentation covered properties, processing, and factors that control their use, such as fatigue and corrosion. Other materials and properties were also explored by U.S. and Mexican participants. Sev eral papers dealt with the characterization and properties of magnetics, optical and superconductor materials, nanostructured materials, as well as with computational and theoretical aspects likely to impact future materials research and development."

Research on ferroelectricity and ferroelectric materials started in 1920 with the discovery by Valasek that the variation of spontaneous polarization in Rochelle salt with sign and magnitude of an applied electric field traced a complete and reproducible hysteresis loop. Activity in the field was sporadic until 1935, when Busch and co-workers announced the observation of similar behavior in potassium dihydrogen phosphate and related compounds. Progress thereafter continued at a modest level with the undertaking of some theoretical as well as further experimental studies. In 1944, von Hippel and co-workers discovered ferroelectricity in barium titanate. The technological importance of ceramic barium titanate and other perovskites led to an upsurge of interest, with many new ferroelectrics being identified in the following decade. By 1967, about 2000 papers on various aspects of ferroelectricity had been published. The bulk of this widely dispersed literature was concerned with the experimental measurement of dielectric, crystallographic, thermal, electromechanical, elastic, optical, and magnetic properties. A critical and excellently organized cpmpilation based on these data appeared in 1969 with the publica tion of Landolt-Bornstein, Volume 111/3. This superb tabulation gave instant access to the results in the literature on nearly 450 pure substances and solid solutions of ferroelectric and antiferroelectric materials. Continuing interest in ferroelectrics, spurred by the growing importance of electrooptic crystals, resulted in the publication of almost as many additional papers by the end of 1969 as had been surveyed in Landolt-Bornstein."

The Hiroshima Workshop on Transport and Thermal Properties of f-Electron Systems, T2PfS, was held in the hotel Greenpia Yasuura on the shores of the Seto Inland Sea near Hiroshima, Japan from August 30, to September 2, 1992, as a satellite meeting of the International Conference of Strongly Correlated Electron Systems in Sendai. The purpose of this workshop was to bring together those scientists who are actively involved in the research of 4f- and 5f-electron systems; particularly the transport and thermal properties such as electrical resistivity, Hall effect, thermoelectric power, thermal conductivity, thermal expansion and specific heat. Hence, the organizing committee limited the number of participants to 60; 25 from abroad and 35 from Japan. In the workshop, all the sessions consisted of oral presentations; 25 invited talks and 5 contributed talks, including at least 10 minutes of discussion for each presentation. The program was divided into the following five topics: [1] Kondo-lattice semiconductors, [2] superconductivity of f-electron systems, [3] anomalous transport and thermal properties of 4f- and 5f-compounds, [4] low-carrier heavy-electron systems and [5] theoretical investigation of heavy-electron and mixed-valence states. This division of topics has been retained in the organization of papers in this volume. Almost all of the invited and contributed papers are included. These papers include excellent reviews of both the recent advances and historical background of each topic. We believe this book would be a tutorial text for researchers working in the field of solid state physics.

In 1992 Acoustic Microscopy was published by Oxford University Press, in the series of Monographs on the Physics and Chemistry of Materials. Reviews appeared in the Journal of Microscopy [169 (1), 91] and in Contemporary Physics [33 (4), 296]. At the time of going to press, it seemed that the field of acoustic microscopy had settled down from the wonderful developments in resolution that had been seen in the late seventies and the early eighties and from the no less exciting developments in quantitative elastic measurements that had followed. One reviewer wrote, "The time is ripe for such a book, now that the expansion of the subject has perceptively slowed after it was detonated by Lemons and Quate. " [A. Howie, Proc. RMS 27 (4), 280]. In many ways, this remains true. The basic design for both imaging and quantitative instruments is well-established; the upper frequency for routine imaging is the 2 GHz established by the Ernst Leitz scanning acoustic microscope (ELSAM) in 1984. For the most accurate V(z) measurements, the 225-MHz line-focus-beam lens, developed at Tohoku Univer sity a little before then, remains standard. The principles of the contrast theory have been confirmed by abundant experience; in particular the role of surface acoustic waves, such as Rayleigh waves, dominates the contrast in most high resolution studies of many materials.

Telescopes and Techniques has proved itself in its first edition, having become probably one of the most widely used astronomy texts, both for numerate amateur astronomers and for astronomy and astrophysics undergraduates. The first and second editions of the book were widely used as set texts for introductory practical astronomy courses in many universities.
This book guides the reader through the mathematics, physics and practical techniques needed to use telescopes (from small amateur models to the larger instruments installed in many colleges) and to observe objects in the sky. Mathematics to around Advanced Placement standard (US) or A level (UK) is assumed, although High School Diploma (US) or GCSE-level (UK) mathematics plus some basic trigonometry will suffice most of the time. Most of the physics and engineering involved is described fully and requires no prior knowledge or experience.
This is a how to book that provides the knowledge and background required to understand how and why telescopes work. Equipped with the techniques discussed in this book, the observer will be able to operate with confidence his or her telescope and to optimize its performance for a particular purpose. In principle the observer could calculate his or her own predictions of planetary positions (ephemerides), but more realistically the observer will be able to understand the published data lists properly instead of just treating them as recipes. When the observer has obtained measurements, he/she will be able to analyze them in a scientific manner and to understand the significance and meaning of the results.
Telescopes and Techniques, 3rd Edition fills a niche at the start of an undergraduate astronomer s university studies, as shown by it having been widely adopted as a set textbook. This third edition is now needed to update its material with the many new observing developments and study areas that have come into prominence since it was published. The book concentrates on the knowledge needed to understand how small(ish) optical telescopes function, their main designs and how to set them up, plus introducing the reader to the many ways in which objects in the sky change their positions and how they may be observed. Both visual and electronic imaging techniques are covered, together with an introduction to how data (measurements) should be processed and analyzed. A simple introduction to radio telescopes is also included. Brief coverage of the most advanced topics of photometry and spectroscopy are included, but mainly to enable the reader to see some of the developments possible from the basic observing techniques covered in the main parts of the book."

This volume is a collection of papers presented at the Ninth International Symposium on "Ultrafast Processes in Spectroscopy" (UPS '95) held at the International Centre for Theo retical Physics (ICTP), Trieste (Italy), October 30 -November 3, 1995. These meetings have become recognized as the major forum in Europe for discussion of new work in this rapidly moving field. The UPS'95 Conference in Trieste brought together a multidisciplinary group of researchers sharing common interests in the generation of ultrashort optical pulses and their application to studies of ultrafast phenomena in physics, chemistry, material science, electronics, and biology. It was attended by approximately 250 participants from 20 countries and the five-day program comprises more than 200 papers. The progress of both technology and applications in the field of ultrafast processes during these last years is truly remarkable. The advent of all solid state femtosecond lasers and the extension of laser wavelengths by frequency conversion techniques provide a large variety of high-performance light sources for ultrashort pulses. With these sources ultrafast phenomena in physical, chemical and biological systems and in electronic de vi(:es are now studied extensively. Ultrafast technology is becoming one of the basic and common tools presently entering a wide variety of scientific fields not only for basic re search but also for promoting new applications in various areas. We feel that these pro ceedings vividly reflect the present status of the field.

The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

This volume contains the proceedings of a five-day NATO Advanced Research Workshop "On Three Levels, the mathematical physics of micro-, meso-, and macro phenomena," conducted from July 19 to 23 in Leuven, Belgium. The main purpose of the workshop was to bring together and to confront where relevant, classical and quantum approaches in the rigorous study of the relation between the various levels of physical description. The reader will find here discussions on a variety of topics involving a broad range of scales. For the micro-level, contributions are presented on models of reaction-diffusion pro cesses, quantum groups and quantum spin systems. The reports on quantum disorder, the quantum Hall effect, semi-classical approaches of wave mechanics and the random Schrodinger equation can be situated on the meso-level. Discussions on macroscopic quantum effects and large scale fluctuations are dealing with the macroscopic level of description. These three levels are however not independent and emphasis is put on relating these scales of description. This is especially the case for the contributions on kinetic and hydrodynamicallimits, the discussions on large deviations and the strong and weak coupling limits. The advisory board was composed of J.L. Lebowitz, J.T. Lewis and E.H. Lieb. The organizing committee was formed by Ph.A. Martin, G.L. Sewell, E.R. Speer and A.

This volume contains the proceedings of the University of Miami Workshop on the subject of "Electronic Structure and Mechanisms for High Temperature Super conductivity". The workshop was held at the James L. Knight Physics Building on the campus of the University of Miami, Coral Gables, 3-9 January 1991. Some 106 scientists from 12 countries attended this workshop, most of whom presented either invited or contributed papers. The reader will find in this volume a series of papers discussing the most im portant experimental and theoretical developments as of winter/spring 1990/1991. Despite more than four years of intensive research on high-T materials, there has c been considerable controversy both with respect to the interpretation of experiment and even more so in connection with the construction of an appropriate theory. In this regard, workshops such as this, gathering scientists with many viewpoints, and varying specialization, and fostering constructive discussions, are important in the de velopment of a common ground. Of major concern in the present context were the basic physical processes involved in high-temperature superconductivity.

This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctorate in Physics from the University of Reading and then joined the faculty. In 1963. he accepted a position in the Department of Physics at Pennsylvania State University. While at Penn State. Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institute of Physics. London. the Royal Photographic society and is a Corresponding Member of the Deutsche Gesellschaft fur Photographie. In addition to his considerable publication in the fields of physics and the history of photography. Dr. Henisch is the founder and editor of the Journal of the History of Photography published quarterly by Taylor and Francis. Ltd .. London.

Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.

The extensive use of low-energy accelerators in non-nuclear physics has now reached the stage where these activities are recognized as a natural field of investigation. Many other areas in physics and chemistry have undergone similarly spectacular development: beam foil spectroscopy in atomic physics, studies in atomic collisions, materials implantation, defects creation, nuclear microanalysis, and so on. Now, this most recent activity by itself and in its evident connec tion with the others has brought a new impetus to both the funda mental and the applied aspects of materials science. A summer school on "Material Characterization Using Ion Beams" has resulted from these developments and the realization that the use of ion beams is not restricted to accelerators but covers a wide energy range in the developing technology. The idea of the ion beam as a common denominator of many act1v1t1es dealing with surface and near-surface characterization was enthu siastically received by many scientists and a school on this subject received the positive endorsement of NATO. The Advanced Study Institute on Materials Science has assumed for us the status of an "institution" leading to better contact among the many laboratories engaged in this field. The fourth Institute in this series was held in Aleria, Corsica, between August 22 and September 12, 1976."