This conference is the second on the Science and Technology of Thin Film Superconductors. It proved to be an excellent forum for these specialists in thin film superconductivity. The conference, held April 30-May 4, 1990, in Denver, Colorado, hosted 170 researchers from 17 countries. The response to the conference again emphasized the need for a meeting devoted to the science and technology of thin film superconductors. The breadth of artic1es and advances made in this technology since the first conference in November 1988, reflect on the maturity of the topic. These proceedings contain artic1es on deposition methods by sputtering, e1ectron beam evaporation, resistive evaporation, laser ablation, chemical vapor deposition and electrodeposition, and on other studies related to substrates, thermodynamics of formation, grain boundaries and weak links, characterization, and some practical applications. The program committee was pleased with the quality of the publications and contributed articles. This conference was highlighted by a fuU day dedicated to presentations from the federallaboratories, discussing a wide range of topics on the fabrication, characterization, and theory of high-temperature superconductor thin films. Other highlights at the conference dealt with (1) critical parameters or problems in measuring critical current density and other important parameters, and (2) problems of scale-up, reproducibility, and amenability to device fabrication. It became evident from the presentations that three issues were developing into critical issues for the ultimate practical application of high temperature superconductor thin films."

Leading practitioners describe in detail advanced methods of mass spectrometry used in structural characterization of biomacromolecules of both natural and recombinant origin. They demonstrate by example how these methodologies can solve a wide array of real-world problems in protein biochemistry, immunology, and glycobiology, as well as for human bacterial pathogens, lipids, and nucleic acids. The book offers a unique opportunity to learn these techniques that are revolutionizing the field. Its authoritative assessment in the context of how to solve important and challenging problems in bioscience and medicine ensures a competitive advantage for today's researchers.

The NATO Advanced Research Workshop on Fundamental Aspects of Inert Gases in Solids, held at Bonas, France from 16-22 September 1990, was the fifth in a series of meetings that have been held in this topic area since 1979. The Consultants' Meeting in that year at Harwell on Rare Gas Behaviour in Metals and Ionic Solids was followed in 1982 by the Jiilich Inter national Symposium on Fundamental Aspects of Helium in Metals. Two smaller meetings have followed-a CECAM organised workshop on Helium Bubbles in Metals was held at Orsay, France in 1986 while in February 1989, a Topical Symposium on Noble Gases in Metals was held in Las Vegas as part of the large TMS/AIME Spring Meeting. As is well known, the dominating feature of inert gas atoms in most solids is their high heat of solution, leading in most situations to an essentially zero solubility and gas-atom precipita tion. In organising the workshop, one particular aim was to target the researchers in the field of inert-gas/solid interactions from three different areas--namely metals, tritides and nuclear fuels-in order to encourage and foster the cross-fertilisation of approaches and ideas. In these three material classes, the behaviour of inert gases in metals has probably been most studied, partly from technological considerations-the effects of helium production via (n, a) reac tions during neutron irradiation are of importance, particularly in a fusion reactor environ ment-and partly from a more fundamental viewpoint."

Provides a rigorous derivation of surface properties such as temperature and deformation using continuum mechanics; Discussion is animated by the authors' decades of experience in experimental mechanics; Includes many techniologically motivated problems, solutions and computer solutions

This monograph introduces the students and specialists of agricultural and food science to the fundamentals of optical spectroscopy, main principles of modern spectroscopic instrumentation, advantages and practical applications of spectroscopic methods to investigation of agricultural objects such as milk and dairy products, eggs, honey, animal hair, and agronomic plants.

Since the publication in 1950 of Vol. I, Spectra of Diatomic Molecules of Molecular Spectra and Molecular Structure, much progress has been made in the field. While there have been some important refinements in the theory of diatomic molecular spectra, most of the advances have been in the further exploration of individual spectra. Not only has the number of molecules about which some spectroscopic data are available been increased by a factor of 2 to 3, but also the spectroscopic information about the molecules known in 1950 has been vastly extended. This is due to the observation of new elec tronic states (about three times as many as known before), the enormous improvements in the accuracy of the constants of the states known in 1950, and the determination of higher order constants. In view of the increasing use of spectroscopic information on diatomic molecules in other fields of physics, in chemistry, and in astrophysics, it appeared desirable to prepare an up-to-date version of the table of molecular constants in the appendix of Vol. I. This updating proved to be far more time-consuming than originally anticipated, and it is only now, 10 years that we are able to present such a table, which, instead after its initiation, of the original 80 pages (plus 30 pages of bibliography), now fills a volume of 700 pages. In the interest of economy, and unlike the original version, the new table has been produced by photo-offset from the final manuscript."

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.

These volumes contain the invited and contributed talks of the first general Conference of the Condensed Matter Division of the European Physical Society, which took place at the campus of the University of Antwerpen (Universitaire Instelling Antwerpen) from April 9 till 11, 1980. The invited talks give a broad perspective of the current state in Europe of research in condensed matter physics. New developments and advances in experiments as well as theory are reported for 28 topics. Some of these developments, such as the recent stabilization of mono-atomic hydrogen, with the challenging prospect of Bose condensation, can be considered as major break throughs in condensed matter physics. Of the 65 invited lecturers, 54 have submitted a manuscript. The remaining talks are published as abstracts. The contents of this first volume consists of 9 plenary papers. Among the topics treated in these papers are: - electronic structure computations of iron the density functional theory hydrogen in amorphous si topologically disordered materials nuclear antiferromagnetism stabilization of mono-atomic hydrogen gas covalent and metallic glasses nonlinear excitations in ferroelectrics."

Thisbookiswrittenforthosescientistsandengineerswhowishtounderstand the synthesis, physical and chemical properties, and applications of inorganic and metallic nanotubular materials. The original version of this book, written inJapanese,coveredthoseoforganic,inorganic,andmetallicnanotubular- terials or almost all the other nanotubular materials than carbon nanotubes. This English version is concerned with only the chapters of inorganic and metallic nanotubular materials. In most industries worldwide, recent attention is unexceptionally focused on the research and development of highly functional new materials or te- nologies leading to energetically highly e?cient activities. Nanotubular - terials are one of the materials with such technological potentials because of their nano-sized unique structures available, for example, functionalization at their internal and external surfaces. In 1991, Dr. S. Iijima discovered a tu- lar material of carbon and named it carbon nanotubes. Since then, worldwide attention has been focused on the basic and functional properties of the novel materials and in more recent times the research phase has developed into an advanced stage based on strategic researches toward various applications. Carbon nanotubes have thus become synonymous with nanotubular materials and still more a symbol of nanotechnology because of their unique, valuable, and versatile properties.

The recent discovery of high-temperature superconductivity has resulted in a remarkable growth in the amount of research and the number of researchers working in this exciting field. Superconductivity is not a new phenomenon: in 1991 it will be 80 years old. Even though it was the newer discoveries which motivated us to write this book, the book itself is mainly a description of the fundamentals of the phenomenon. The book is written for a very broad audience, including students, engin eers, teachers, scientists, and others who are interested in learning about this exciting frontier of science. We have focused on the qualitative aspects, so that the reader can develop a basic understanding of the fundamental physics without getting bogged down in the details. Because of this approach, our list of refer ences is not comprehensive, and it is supplemented with a summary of additional reading consisting of monographs and selected review articles. (The articles we have referenced were either not reflected in the review articles on monographs or were milestones in the development of the field. ) In addition, some of the sections which can be skipped during the first reading have been marked with asterisks (*). Until recently, superconductivity was considered to belong to the field of low-temperature physics. This field was born, simultaneously with quantum physics, at the beginning of this century. Initially these two contemporaneous fields developed independently, but they soon became strongly coupled."

These volumes contain the invited and contributed talks of the first general Conference of the Condensed Matter Division of the European Physical Society, which took place at the campus of the University of Antwerpen (Universitaire Instelling Antwerpen) from April 9 till 11, 1980. The invited talks give a broad perspective of the current state in Europe of research in condensed matter physics. New developments and advances in experiments as well as theory are reported for 28 topics. Some of these developments, such as the recent stabilization of mono-atomic hydrogen, with the challenging prospect of Bose condensation, can be considered as major break throughs in condensed matter physics. Of the 65 invited lecturers, 54 have submitted a manuscript. The remaining talks are published as abstracts. The contents of this first volume consists of 9 plenary papers. Among the topics treated in these papers are: - electronic structure computations of iron the density functional theory hydrogen in amorphous Si topologically disordered materials nuclear antiferromagnetism stabilization of mono-atomic hydrogen gas covalent and metallic glasses nonlinear excitations in ferroelectrics.

Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions - such as the Helium Ion Microscope (HIM) - are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined.

Energy-Filtering Transmission Electron Microscopy (EFTEM) presents a summary of the electron optics, the electron-specimen interactions, and the operation and contrast modes of this new field of analytical electron microscopy. The electron optics of filter lenses and the progress in the correction of aberrations are discussed in detail. An evaluation of our present knowledge of plasmon losses and inner-shell ionisations is of increasing interest for a quantitative application of EFTEM in materials and life sciences. This can be realized not only by filtering the elastically scattered electrons but mainly by imgaging and analyzing with inelastically scattered electrons at different energy losses up to 2000 eV. The strength of EFTEM is the combination of the modes EELS, ESI, ESD and REM.

The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.

This volume contains the proceedings of the first NATO Science Forum "Highlights of the Eighties and Future Prospects in Condensed Matter Physics" (sponsored by the NATO Scientific Affairs Division), which took place in September, 1990, in the pleasant surroundings provided by the Hotel du Palais at Biarritz, France. One hundred distinguished physicists from seventeen countries, including six Nobellaureates, were invited to participate in the four and a half day meeting. Focusing on three evolving frontiers: semiconductor quantum structures, including the subject of the quantumHall effect (QHE), high temperature superconductivity (HiTc) and scanning tunneling microscopy (STM), the Forum provided an opportunity to evaluate, in depth, each of the frontiers, by reviewing the progress made during the last few years and, more importantly, exploring their implications for the future. Though serious scientists are not "prophets," all of the participants showed a strong interest in this unique format and addressed the questions of future prospects, either by extrapolating from what has been known, or by a stretch of their "educated" imagination.

Microcharacterization of materials is a rapidly advancing field. Among the many electron and ion probe techniques, the cathodoluminescence mode of an electron probe instrument has reached a certain maturity, which is reflected by an increas ing number of publications in this field. The rapid rate of progress in applications of cathodoluminescence techniques in characterizing inorganic solids has been especially noticeable in recent years. The main purpose of the book is to outline the applications of cath odoluminescence techniques in the assessment of optical and electronic proper ties of inorganic solids, such as semiconductors, phosphors, ceramics, and min erals. The assessment provides, for example, information on impurity levels derived from cathodoluminescence spectroscopy, analysis of dopant concentra tions at a level that, in some cases, is several orders of magnitude lower than that attainable by x-ray microanalysis, the mapping of defects, and the determination of carrier lifetimes and the charge carrier capture cross sections of impurities. In order to make the book self-contained, some basic concepts of solid-state phys ics, as well as various cathodoluminescence techniques and the processes leading to luminescence phenomena in inorganic solids, are also described. We hope that this book will be useful to both scientists and graduate students interested in microcharacterization of inorganic solids. This book, however, was not intended as a definitive account of cathodoluminescence analysis of in organic solids. In considering the results presented here, readers should re member that many materials have properties that vary widely as a function of preparation conditions."

There is considerable interest, both fundamental and technological, in the way atoms and molecules interact with solid surfaces. Thus the description of heterogeneous catalysis and other surface reactions requires a detailed understand ing of molecule-surface interactions. The primary aim of this volume is to provide fairly broad coverage of atoms and molecules in interaction with a variety of solid surfaces at a level suitable for graduate students and research workers in condensed matter physics, chemical physics, and materials science. The book is intended for experimental workers with interests in basic theory and concepts and had its origins in a Spring College held at the International Centre for Theoretical Physics, Miramare, Trieste. Valuable background reading can be found in the graduate-Ievel introduction to the physics of solid surfaces by ZangwilI(1) and in the earlier works by Garcia Moliner and F1ores(2) and Somorjai.(3) For specifically molecule-surface interac tions, additional background can be found in Rhodin and Ertl(4) and March.(S) V. Bortolani N. H. March M. P. Tosi References 1. A. Zangwill, Physics at Surfaces, Cambridge University Press, Cambridge (1988). 2. F. Garcia-Moliner and F. Flores, Introduction to the Theory of Solid Surfaces, Cambridge University Press, Cambridge (1979). 3. G. A. Somorjai, Chemistry in Two Dimensions: Surfaces, Cornell University Press, Ithaca, New York (1981). 4. T. N. Rhodin and G. Erd, The Nature of the Surface Chemical Bond, North-Holland, Amsterdam (1979). 5. N. H. March, Chemical Bonds outside Metal Surfaces, Plenum Press, New York (1986)."

This book presents an account of the course "Disordered Solids: Structures and Processes" held in Erice, Italy, from June 15 to 29, 1987. This meeting was organized by the International School of Atomic and Molecular Spectroscopy of the "Ettore Majorana" Centre for Scientific Culture. The objective of this course was to present the advances in physical modelling, mathematical formalism and experimental techniques relevant to the interpretation of the structures of disordered solids and of the physical processes occurring therein. Traditional solid-state physics treats solids as perfect crystals and takes great advantage of their symmetry, by means of such mathematical formalisms as the reciprocal lattice, the Brillouin zone, and the powerful tools of group theory. Even if in reality no solid is a perfect crystal, this theoretical approach has been of great usefulness in describing solids: deviations from perfect order have been treated as perturbations of the ideal model. A new situation arises with truly disordered solids where any vestige of long range order has disappeared. The basic problem is that of describing these systems and gaining a scientific understanding of their physical properties without the mathematical formalism of traditional solid state physics. While some of the old approaches may occasionally remain valid (e. g. chemical bonding approach for amorphous solids), the old ways will not do. Disorder is not a perturbation: with disorder, something basically new may be expected to appear."

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

Since the study of the solid state began it has been necessary to use increasingly refined experimental techniques, of which electron spin resonance is an important example, in the effort to gain information concerning the structure and properties of an immense and varied range of solids. In the last two decades the great commercial demand for solid-state electronic devices has stimulated research into the funda mental properties of semiconductors. At the same time as semiconductor devices were becoming techno logically important, the technique of electron spin resonance was first being used on a large scale, principally at the Clarendon Laboratory, Oxford. Both solid-state physics and electron spin resonance have now reached the stage where they are useful to each other, primarily in the realm of the atomic properties of matter. Dr Lancaster's book is one of a series of monographs that aims at covering as comprehensively as possible the field of electron spin resonance. His book has been written for those who wish to know some thing about the way in which the electron spin resonance technique has been used in the study of semiconductors. It also has value for specialists who may need an authoritative work of reference, and for workers in allied subjects who wish to use this technique to further their work. Much of his treatise deals with electron spin resonance in crystals of silicon and germanium containing specific impurities, as these materials are of greatest interest. Practical results are discussed wherever possible."

The properties of soft-matter thin films (e.g. liquid films, polymer coatings, Langmuir-Blodgett multilayers) nowadays play an important role in materials science. They are also very exciting with respect to fundamental questions: In thin films, liquids and polymers may be considered as trapped in a quasi-two-dimensional geometry. This confined geometry is expected to alter the properties and structures of these materials considerably. This volume is dedicated to the scattering of x-rays by soft-matter interfaces. X-ray scattering under grazing angles is the only tool to investigating these materials on atomic and mesoscopic length scales. A review of the field is presented with many examples.

This book gives a detailed overview on this new and exciting field at the boundary of physics and chemistry. Laser-induced ultrafast molecuar dynamics is presented for many textbook-like examples of model molecules and clusters. Experimental results on phenomena like wave packet propagation, ultrafast photodissociation and femtosecond structural redistribution are presented and described theoretically.