"This book contains overviews on technologically important classes of glasses, their treatment to achieve desired properties, theoretical approaches for the description of structure-property relationships, and new concepts in the theoretical treatment of crystallization in glass-forming systems. It contains overviews about the state of the art and about specific features for the analysis and application of important classes of glass-forming systems, and describes new developments in theoretical interpretation by well-known glass scientists. Thus, the book offers comprehensive and abundant information that is difficult to come by or has not yet been made public." Edgar Dutra Zanotto (Center for Research, Technology and Education in Vitreous Materials, Brazil) Glass, written by a team of renowned researchers and experienced book authors in the field, presents general features of glasses and glass transitions. Different classes of glassforming systems, such as silicate glasses, metallic glasses, and polymers, are exemplified. In addition, the wide field of phase formation processes and their effect on glasses and their properties is studied both from a theoretical and experimental point of view.

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Systems driven far from thermodynamic equilibrium can create dissipative structures through the spontaneous breaking of symmetries. A particularlyfascinating feature of these pattern-forming systems is their tendency toproduce spatially confined states. These localized wave packets can exist as propagating entities through space and/or time.

Various examples of suchsystems will be dealt with in this book, including localized states in fluids, chemical reactions on surfaces, neural networks, optical systems, granular systems, population models, and Bose-Einstein condensates.

This book should appeal to all physicists, mathematicians and electrical engineers interested in localization in far-from-equilibrium systems. The authors - all recognized experts in their fields -strive to achieve a balance between theoretical and experimental considerations thereby givingan overview offascinating physical principles, their manifestations in diverse systems, and the noveltechnical applications on the horizon.

This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109 Degrees ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications.

th Superconductivity occ upies as pecial, unique place in the 20 century physics. Just think ofi t: its microscopic mechanism was understood only in 1957-46years after the discovery of superconductivity in 1911. In contrast, thetheory ofnormal metals behavior (or, to be more precise, the theory of metals in normal state) wasformed as early as the twenties, immediately f ollowing the creation of quantum mechanics. Moreover, when I took up the theory of superconductivity in 1943, not only microscopic theory was non existent, but even macroscopic superconductivity theory was quiteincomplete. The problem is that the Londons equations, introduced in 1935, allow only aquantitative description ofsuperconductors in magneticf ields weak in comparison with the critical field. Also, even in weakfields, theLondons theory is strictly applicableonly to Type II superconductors-although the division ofsuperconductors into Type I and Type II materials was notsuggested until much later, in early 1950's. Asf ar as nonequilibrium phenomena are conc erned, then until 1943 the most remarkable, yet proved to be fault afterwards, implication was that ofa complete absence ofa ll thermoelectric effects in superconducting state.

The book you are now holding represents the final step in a long process for the editors and organizers of the Advanced Study Institute on hard magnetic materials. The editors interest in hard magnetic materials began in 1985 with an attempt to better understand the moments associated with the different iron sites in Nd Fe B. These 14 moments can be obtained from neutron diffraction studies, but we qUickly realized that iron-57 Mossbauer spectroscopy should lead to a better determination of these moments. However, it was also realized that the complex Mossbauer spectra obtained for these hard magnetic materials could not be easily understood without a broad knowledge of their various structural, electronic, and magnetic properties. Hence it seemed useful to the editors to bring together scientists and engineers to discuss, in a tutorial setting, the various properties of these and future hard magnetic materials. We believe the inclusion of engineers as well as scientists in these discussions was essential because the design of new magnetic materials depends very much upon the mode in which they are used in practical devices.

1. An Introductory Review.- 2. Fabrication Techniques for Submicron Devices.- 3. Heterojunctions and Interfaces.- 4. Semiclassical Carrier Transport Models.- 5. Transient Hot-Carrier Transport.- 6. Alloys and Superlattices.- 7. The Electron-Electron Interaction.- 8. Lateral Surface Superlattices.- 9. Quantum Transport in Small Structures.- 10. Noise in Submicron Devices.

An introduction and comprehensive survey of the main issues in mesosocopic physics. Topics covered include quantum Hall effects, transport through quantum wires and dots, coherence in mesoscopic systems, spintronics, disordered systems, and solid state quantum computation. Some contributions are dedicated to the connections between nanoscience and biophysics and quantum optics.
Although the topics mentioned have many aspects in common, they span a wide area of physics. It is therefore especially important to provide a broad view of this rapidly expanding field. Thanks to the excellent presentations, the book will be found suitable both for young researchers who want to enter the field and stimulating for more experienced scientists.

Topological defects are the subject of intensive studies in many different branches of physics ranging from cosmology to liquid crystals and from elementary particles to colloids and biological systems. Liquid crystals are fascinating materials which present a great variety of these mathematical objects and can therefore be considered as an extremely useful laboratory for topological defects. This book is the first attempt to present together complementary approaches to the investigations of topological defects in liquid crystals using theory, experiments and computer simulations.

Amorphous and nanocrystalline materials are a class of their own. Their properties are quite different to those of the corresponding crystalline materials. This book gives systematic insight into their physical properties, structure, behaviour, and design for special advanced applications. The book will appeal to researchers, research engineers and advanced students in materials science.

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

The almost universal presence of water in our everyday lives and the very common' nature of its presence and properties possibly deflects attention from the fact that it has a number of very unusual characteristics which, furthermore, are found to be extremely sensitive to physical parameters, chemical environment and other influences. Hydrogen-bonding effects, too, are not restricted to water, so it is necessary to investigate other systems as well, in order to understand the characteristics in a wider context. Hydrogen Bond Networks reflects the diversity and relevance of water in subjects ranging from the fundamentals of condensed matter physics, through aspects of chemical reactivity to structure and function in biological systems.

This volume differs somewhat from the previous volumes in the series in that there is a strong emphasis on the physical aspects and not so much on the chemical aspects of intermetallic compounds. Two of the chapters are concerned with relatively new experimental methods of studying rare earth metallic phases - high energy neutron spectroscopy and light scattering. In these chapters the authors explain the new kinds of information one obtains from these techniques and how this complements the knowledge previously gleaned from the more common measurements - such as NMR, heat capacities, magnetic susceptibility, transport and elastic properties. One of the remaining three chapters deals with NMR studies of rare earth intermetallics and the final two chapters are concerned, not so much with a particular experimental technique, but with physical phenomena that occur in these compounds: the electron-phonon interaction and heavy fermion behavior.

Lectures and seminar talks review theory and experimental work concerning transport phenomena and the closely related quantum mechanics in 11 chapters covering preparation and characterization, coherence and dephasing, quantization of conductance, quantum Hall effect, persistent currents, quantum tr

The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.

Statistical Physics bridges the properties of a macroscopic system and the microscopic behavior of its constituting particles, otherwise impossible due to the giant magnitude of Avogadro's number. Numerous systems of today's key technologies - such as semiconductors or lasers - are macroscopic quantum objects; only statistical physics allows for understanding their fundamentals. Therefore, this graduate text also focuses on particular applications such as the properties of electrons in solids with applications, and radiation thermodynamics and the greenhouse effect.

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time."

There is a certain fascination associated with words. The manipulation of strings of symbols according to mutually accepted rules allows a language to express history as well as to formulate challenges for the future. But language changes as old words are used in a new context and new words are created to describe changing situations. How many words has the computer revolution alone added to languages? "Inorganometallic" is a word you probably have never encountered before. It is one created from old words to express a new presence. A strange sounding word, it is also a term fraught with internal contradiction caused by the accepted meanings of its constituent parts. "In organic" is the name of a discipline of chemistry while "metallic" refers to a set of elements constituting a subsection of that discipline. Why then this Carrollian approach to entitling a set of serious academic papers? Organic, the acknowledged doyenne of chemistry, is distinguished from her brother, inorganic, by the prefix "in," i. e. , he gets everything not organic. Organometallic refers to compounds with carbon-metal bonds. It is simple! Inorganometallic is everything else, i. e. , compounds with noncarbon-metal element bonds. But why a new term? Is not inorganic sufficient? By virtue of training, limited time, resources, co-workers, and so on, chemists tend to work on a specific element class, on a particular compound type, or in a particular phase. Thus, one finds element-oriented chemists (e. g.

This thesis addresses the surprising features of zero-temperature statics and dynamics of several spin glass models, including correlations between soft spins that arise spontaneously during avalanches, and the discovery of localized states that involve the presence of two-level systems. It also presents the only detailed historiographical research on the spin glass theory. Despite the extreme simplicity of their definition, spin glasses display a wide variety of non-trivial behaviors that are not yet fully understood. In this thesis the author sheds light on some of these, focusing on both the search for phase transitions under perturbations of Hamiltonians and the zero-temperature properties and responses to external stimuli. After introducing spin glasses and useful concepts on phase transitions and numerics, the results of two massive Monte Carlo campaigns on three-dimensional systems are presented: The first of these examines the de Almeida-Thouless transition, and proposes a new finite-size scaling ansatz, which accelerates the convergence to the thermodynamic limit. The second reconstructs the phase diagram of the Heisenberg spin glass with random exchange anisotropy.

This book summarizes the current knowledge of two-dimensional oxide materials. The fundamental properties of 2-D oxide systems are explored in terms of atomic structure, electronic behavior and surface chemistry. The concept of polarity in determining the stability of 2-D oxide layers is examined, charge transfer effects in ultrathin oxide films are reviewed as well as the role of defects in 2-D oxide films. The novel structure concepts that apply in oxide systems of low dimensionality are addressed, and a chapter giving an overview of state-of-the-art theoretical methods for electronic structure determination of nanostructured oxides is included. Special emphasis is given to a balanced view from the experimental and the theoretical side. Two-dimensional materials, and 2-D oxides in particular, have outstanding behavior due to dimensionality and proximity effects. Several chapters treat prototypical model systems as illustrative examples to discuss the peculiar physical and chemical properties of 2-D oxide systems. The chapters are written by renowned experts in the field.

This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics."

In this book, the author theoretically studies two aspects of topological states. First, novel states arising from hybridizing surface states of topological insulators are theoretically introduced. As a remarkable example, the author shows the existence of gapless interface states at the interface between two different topological insulators, which belong to the same topological phase. While such interface states are usually gapped due to hybridization, the author proves that the interface states are in fact gapless when the two topological insulators have opposite chiralities. This is the first time that gapless topological novel interface states protected by mirror symmetry have been proposed. Second, the author studies the Weyl semimetal phase in thin topological insulators subjected to a magnetic field. This Weyl semimetal phase possesses edge states showing abnormal dispersion, which is not observed without mirror symmetry. The author explains that the edge states gain a finite velocity by a particular form of inversion symmetry breaking, which makes it possible to observe the phenomenon by means of electric conductivity.

This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.